JP2010232292A - Manufacturing method for semiconductor device, and semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of eliminating an adhesive which remains and pastes together an adhesive member and a light-transmitting member, without gaps to provide a quality semiconductor device, and to provide a semiconductor device manufactured by the manufacturing method. <P>SOLUTION: A second adhesive layer made of the adhesive which does not contain additives is formed on a first adhesive layer, made of an adhesive containing an adhesive to form a laminated adhesive body. This laminated adhesive body is pasted on a semiconductor element, such that the first adhesive layer is pasted on the semiconductor element, and an opening penetrating through the first and second adhesive layers is formed on the laminated adhesive body; and then the adhesive remaining on the opening is eliminated. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a method of manufacturing a semiconductor device and a semiconductor device, and more particularly to a method of manufacturing a semiconductor device in which a light transmissive member is attached to a semiconductor element via an adhesive member and sealed, and a semiconductor device manufactured thereby. It is.

  With recent miniaturization and higher performance of mobile phones, camera modules used in mobile phones are becoming increasingly compatible with high pixels and have a low profile. In addition, downsizing of sensor components built in camera modules for mobile phones is also required. Conventionally, a wire bond method, a flip chip method, or the like has been employed for mounting a sensor, but in recent years, a method for mounting a sensor as a CSP (Chip Scale Package or Chip Size Package) has attracted attention. In this method, since the sensor is formed in an ultra-small and thin shape close to the chip size, high-density mounting becomes possible. In addition, this method can use a conventional surface mounting technique for mounting a sensor on a printed circuit board. In the following, such a sensor is referred to as a sensor CSP.

  There are many types of sensor CSP. For example, a method of forming wiring on the side surface of a package and a TSV (Through Silicon Via) method in which a through hole (via hole) is provided in each sensor CSP (that is, each sensor chip) are known.

  In the sensor CSP using the TSV method, the sensor CSP is sealed by attaching a light transmissive member to the semiconductor element via an adhesive member having an opening at the center. The adhesive member contains a filler which is an additive. By including the filler, the viscosity of the adhesive member is adjusted, and further, improvement of the properties of the adhesive member and reduction of the moisture absorption rate are achieved. Patent Document 1 discloses such a sensor CSP.

JP 2006-228837 A

  When an opening is formed in a photolitho type adhesive member, removing the adhesive residue after photolithography by ashing process leads to improvement in the quality of the sensor CSP.

  However, when the ashing process is performed on the entire adhesive member after photolithography, the filler in the adhesive member may be exposed, and in the exposed state of the filler, there is no gap between the light-transmitting members (that is, there is no portion that is not bonded). It is difficult to paste. In such a sensor CSP that has been insufficiently attached, the adhesive member and the light transmissive property are caused by thermal stress in the mounting process on the substrate and heat and occasional stress during use of the device in which the CSP sensor is incorporated. There is a problem that peeling occurs starting from a gap portion with the member.

  The present invention has been made in view of the above circumstances, and a manufacturing method capable of providing a high-quality semiconductor device by removing an adhesive residue and attaching a light-transmitting member to an adhesive member without a gap. And a semiconductor device manufactured thereby.

  In order to solve the above-described problem, a method for manufacturing a semiconductor device according to the present invention includes a second adhesion made of an adhesive not containing an additive on a first adhesive layer made of an adhesive containing an additive. A laminated adhesive forming step of forming a laminated adhesive by forming a layer, a step of attaching the laminated adhesive to the semiconductor element so that the first adhesive layer is adhered to the semiconductor element, and a first adhesive layer And an opening forming step of forming an opening penetrating the second adhesive layer in the laminated adhesive, and a step of removing an adhesive residue in the opening.

  In order to solve the above-described problem, a semiconductor device of the present invention includes a semiconductor element, a first adhesive layer made of an adhesive containing an additive, and a second adhesive made of an adhesive not containing the additive. A layered structure having a layer structure in which layers are sequentially stacked on a semiconductor element, and a laminated adhesive body having openings penetrating the first adhesive layer and the second adhesive layer, and affixed on the second adhesive layer A light-transmitting member, and the opening size of the opening is the same in the first adhesive layer and the second adhesive layer.

  Furthermore, in order to solve the above-described problem, a method for manufacturing a semiconductor device according to the present invention includes a step of preparing a first substrate having a plurality of transmissive regions and an adhesive region surrounding the transmissive regions on a surface, Forming a laminated adhesive body in which a photosensitive first adhesive layer containing an additive and a photosensitive second adhesive layer having no additive are sequentially laminated on the surface of one substrate; A step of removing the first adhesive layer and the second adhesive layer formed on the transmissive region by the exposure development process, and a step of removing residues of the first adhesive layer and the second adhesive layer on the transmissive region; And a step of attaching the second substrate so as to cover the transmission region with the second adhesive layer interposed therebetween.

  In the method for manufacturing a semiconductor device of the present invention, a second adhesive layer made of an adhesive not containing an additive is formed on a first adhesive layer made of an adhesive containing an additive to form a laminated adhesive body. Forming and adhering the laminated adhesive to the semiconductor element so that the first adhesive layer is adhered to the semiconductor element, and forming an opening penetrating the first adhesive layer and the second adhesive layer in the laminated adhesive. The adhesive residue in the opening is removed.

  By sticking the laminated adhesive as described above on the semiconductor element, it is possible to eliminate the exposure of the filler when the adhesive residue is removed. As a result, when the light transmissive member is pasted on the laminated adhesive body, the laminated adhesive body and the light transmissive member can be pasted without any gap, so that a high-quality semiconductor device can be manufactured.

  In the semiconductor device of the present invention, a semiconductor element, a first adhesive layer made of an adhesive containing an additive, and a second adhesive layer made of an adhesive not containing an additive are sequentially stacked on the semiconductor element. And a laminated adhesive body having an opening penetrating the first adhesive layer and the second adhesive layer, and a light transmissive member attached on the second adhesive layer. The opening size of the opening is the same in the first adhesive layer and the second adhesive layer.

  Due to the structure of the semiconductor device as described above, the laminated adhesive body and the light transmission member are attached with no gap. Moreover, since the opening dimension of an opening part is the same, the protrusion part of a lamination | stacking adhesive body does not exist. Therefore, the semiconductor device of the present invention can have high quality.

(A) is sectional drawing of the semiconductor device which is an Example of this invention, (b) is an enlarged view of the broken-line area | region 1b shown by Fig.1 (a). It is sectional drawing in each process of the manufacturing method which is an Example of this invention. It is sectional drawing in each process of the manufacturing method which is an Example of this invention. It is sectional drawing in each process of the manufacturing method which is an Example of this invention.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

  First, the structure of the semiconductor device will be described with reference to FIG. FIG. 1A is an enlarged view of a semiconductor device of the present invention, and FIG. 1B is an enlarged view of a broken line region 1b shown in FIG.

  As shown in FIG. 1A, a semiconductor device 10 according to the present invention includes a semiconductor element 11 as a light receiving element, a laminated adhesive body 12 including two kinds of adhesive layers, and a cover glass 13 as a light transmitting member. , Embedded wiring 14, back surface wiring 15, insulating layer 16, and external connection terminal 17. Hereinafter, each component will be described in detail.

  The semiconductor element 11 is composed of a CMOS transistor including a P-channel MOS transistor (PMOS) and an N-channel MOS transistor (NMOS). In addition, connection pads are formed on the surface of the semiconductor element 11 to make electrical connection with PMOS and NMOS. Note that these transistors and connection pads are omitted from the drawing for convenience.

  The laminated adhesive body 12 is disposed on the surface of the semiconductor element 11. In addition, since the laminated adhesive body 12 has an opening at the center portion, the laminated adhesive body 12 is disposed at an edge portion on the surface of the semiconductor element 11. A cover glass 13 is affixed on the laminated adhesive body 12. By attaching the cover glass 13 on the laminated adhesive body 12, the opening of the laminated adhesive body 12 is covered and the CMOS transistor is sealed. By such sealing, a space 18 surrounded by the semiconductor element 11, the laminated adhesive body 12, and the cover glass 13 is formed.

  The embedded wiring 14 penetrates the semiconductor element 11. More specifically, the embedded wiring 14 is disposed so as to connect the connection pad formed on the surface of the semiconductor element 11 and the back surface wiring 15. That is, the embedded wiring 14 is formed from the back surface wiring 15 to just below the connection pad. Further, since the embedded wiring 14 has a structure in which a metal such as copper, aluminum, or tungsten is covered with an insulating film, the metal and the semiconductor element 11 are not in direct contact with each other.

  The back surface wiring 15 electrically connects the embedded wiring 14 and the external connection terminal 17. The external connection terminal 17 is formed on the back surface wiring 15. A part of the back surface wiring 15 and the external connection terminal 17 is covered with an insulating layer 16. For example, the back wiring 15 is made of aluminum, the insulating layer 16 is made of resin, and the external connection terminals 17 are solder balls.

  Since the semiconductor device 10 has the above structure, it is classified as a CSP (Chip Scale Package or Chip Size Package) type sensor capable of high-density mounting.

  As shown in FIG. 1B, the laminated adhesive body 12 has a two-layer laminated structure including a first adhesive layer 12a and a second adhesive layer 12b. The first adhesive layer 12a is made of an adhesive containing a filler 19 that is an additive for adjusting the viscosity. Moreover, the characteristic improvement of the 1st contact bonding layer 12a and a moisture absorption fall can be aimed at by containing the filler 19. FIG. For example, the filler 19 is silica, titanium oxide, antimony oxide, talc, calcium carbonate, graphite powder, carbon fiber, silicon nitride, or silicon carbide. The second adhesive layer 12 b is made of an adhesive that does not contain the filler 19.

  Next, the method for manufacturing a semiconductor device according to the present invention will be described in detail with reference to FIGS.

  First, the laminated adhesive body 12 which consists of the 1st contact bonding layer 12a containing the filler 19 and the 2nd contact bonding layer 12b which does not contain the filler 19 is prepared (FIG. 2 (a)). More specifically, a liquid adhesive varnish in which the filler 19 is mixed and dispersed is applied on a carrier film (separator film) and further dried to form the film-like first adhesive layer 12a. Subsequently, a liquid adhesive varnish is applied on the first adhesive layer 12a, and further dried to form a film-like second adhesive layer 12b on the first adhesive layer 12a. Thereafter, the film-like laminated adhesive body 12 is formed by peeling off the unnecessary carrier film. Here, since the first adhesive layer 12a and the second adhesive layer 12b are adhesive films having negative-type photosensitivity, the laminated adhesive body 12 is also an adhesive film having negative-type photosensitivity. The film-like laminated adhesive body 12 thus formed has high flatness. Thereby, the glass cover 13 can be mounted in parallel to the semiconductor element 11 in the step of attaching the glass governor 13 described later.

  In addition, each of the first adhesive layer 12a and the second adhesive layer 12b is formed on a separate carrier film, and then the first adhesive layer 12a and the second adhesive layer 12b are bonded to each other to form a laminated adhesive. The body 12 may be formed.

  Next, a heating temperature of about 50 degrees Celsius (50 ° C.) to 80 ° C. is applied to a semiconductor wafer 20 on which a CMOS transistor and connection pads are formed (that is, a wafer on which a plurality of semiconductor elements 11 are formed). Lamination is performed at a pressure of 1 megapascal (MPa) to 0.5 MPa (FIG. 2B), and the laminated adhesive body 12 is attached on the surface of the semiconductor wafer 20. More specifically, the semiconductor wafer 20 is bonded. A laminated adhesive body 12 is affixed on the semiconductor element 11 formation surface of the semiconductor element 11. Here, lamination is performed so that the first adhesive layer 12a and the semiconductor wafer 20 are in contact with each other (FIG. 2C). That is, the laminated adhesive body 12 is affixed to the semiconductor wafer 20 with the portion not containing the filler 19 (that is, the second adhesive layer 12b) disposed above. Thus, the second adhesive layer 12b is exposed above the semiconductor wafer 20. Thus, the laminated adhesive body 12 in a state before being subjected to photolithography described later is attached to the semiconductor wafer 20. The fluidity at the time of laminating is improved, and the filling property of the laminated adhesive body 12 at the step on the surface of the semiconductor wafer 20 is improved, that is, the generation of voids between the semiconductor wafer 20 and the laminated adhesive body 12 is suppressed. .

  Next, the laminated adhesive body 12 is patterned into a desired shape by photolithography. More specifically, first, a photomask 21 having a desired opening pattern is disposed so as to face the second adhesive layer 12b, and a surface on which the semiconductor element 11 is formed from a light source located above the photomask 21. Light is irradiated to the laminated adhesive body 12 stuck thereon (that is, an exposure process is performed) (FIG. 2D). Subsequently, the laminated adhesive body 12 is developed. Since the laminated adhesive body 12 is an adhesive film having negative-type photosensitivity, only the portion corresponding to the opening portion of the photomask 21 remains by the exposure and development, and the first adhesive layer 12a and the second adhesive layer 12b are formed. A penetrating opening 31 is formed (FIG. 3A). As a result, the laminated adhesive body 12 has a lattice shape, and the surface of the semiconductor wafer 20 is partially exposed (that is, the semiconductor element 11 is exposed). The exposed portion is a transmission region, and the portion where the laminated adhesive 12 remains is an adhesion region.

  In addition, since the first adhesive layer 12a and the second adhesive layer 12b are simultaneously subjected to exposure processing and development processing (both processing is also referred to as exposure development processing), the dimensions of the openings formed in both layers. Are the same. That is, since the shape and the opening size of the opening 31 can be adjusted with high accuracy by simultaneous exposure processing and development processing on both layers, the reliability of the semiconductor device 10 itself can be improved.

  Further, in the present embodiment, since the laminated adhesive body 12 is a negative type adhesive film, even when the opening pattern of the photomask 21 has a defect such as a chip, the shape of the laminated adhesive body 12 is not chipped. No. Further, even if exposure is performed on a portion that is originally removed due to a defect in the photomask 21, if the exposed portion is smaller than the laminated adhesive 12, the exposed portion is not exposed to other parts during development. It is removed together with the removed portion.

  Unnecessary portions, that is, adhesive residues are present on the surface and side surfaces of the laminated adhesive 12 and the surface of the semiconductor wafer 20 due to insufficient development. The adhesive residue may deteriorate the quality of the semiconductor device 10. For this reason, an ashing process is performed in which the adhesive residue and the plasma are reacted to decompose and remove the adhesive residue in the gas phase. The ashing process also removes part of the surface and side surfaces of the adhesive film 12 other than the adhesive residue, but the second adhesive layer 12b not containing the filler 19 is formed on the first adhesive layer 12a. Therefore, the filler 19 is not exposed on the surface of the laminated adhesive body 12 (that is, the exposed surface of the second adhesive layer 12b).

  Next, the cover glass 13 is disposed at a position facing the semiconductor wafer 20 and is thermocompression bonded to the laminated adhesive body 12 and the cover glass 13 (heating temperature: about 120 to 180 ° C., pressure: about 0.5 to 2.0 MPa). Is applied (FIG. 3B). The cover glass 13 is attached to the laminated adhesive body 12 by such thermocompression bonding (FIG. 3C). By sticking the cover glass 13, the opening 31 is covered, and the sealing for each CMOS transistor is completed. By such sealing, a space 18 surrounded by the semiconductor wafer 20, the laminated adhesive body 12, and the cover glass 13 is formed. In this step, the filler 19 is not exposed on the surface of the laminated adhesive body 12 (that is, the surface (interface) where the laminated adhesive body 12 and the cover glass 13 are in contact). Can be pasted without gaps.

  Next, the back surface portion of the semiconductor wafer 20 is removed by grinding, polishing, dry etching, or the like, and the thickness of the semiconductor wafer 20 is adjusted (FIG. 3D). Subsequently, a resist is applied on the back surface of the semiconductor wafer 20. Desired patterning is performed on the resist by photolithography. Dry etching is performed using the patterned resist as a mask to form a through hole 41 penetrating the semiconductor wafer 20 (FIG. 4A). The through hole 41 is formed from the back surface of the semiconductor wafer 20 to a position directly below the connection pad formed on the front surface of the semiconductor wafer 20.

  Next, the embedded wiring 14 is formed so as to fill the through hole 41. More specifically, first, an insulating film is formed on the side surface of the through hole 41 by a thermal oxidation method or a chemical vapor deposition (CVD) method. Further, a buried wiring 14 is formed by depositing a metal such as copper, aluminum, or tungsten by sputtering or vapor deposition so as to cover the insulating film and fill the through hole 41. Subsequently, the back surface wiring 15 is formed on the back surface of the semiconductor wafer 20 and the back surface of the embedded wiring 14. More specifically, first, an aluminum layer is deposited on the back surface of the semiconductor wafer 20 and the embedding wiring 14 by sputtering or vapor deposition. Subsequently, a resist is applied on the aluminum layer. Desired patterning is performed on the resist by photolithography. Dry etching is performed using the patterned resist as a mask to form a back electrode 15 having a desired wiring pattern. FIG. 4B shows a cross-sectional view in a state where the embedded wiring 14 and the back electrode 15 are formed.

  Next, the insulating layer 16 is formed so as to cover the back surface of the semiconductor wafer 20 and the back electrode 15. Further, a part of the insulating layer 16 is removed by a known polishing technique method such as a mechanical polishing method using a diamond slurry, a chemical mechanical polishing method (CMP) or a combination thereof. By this removal, the entire surface of the insulating layer 16 is flattened (FIG. 4C).

  Next, the external connection terminal 17 that is electrically connected to the back surface wiring 15 is formed. More specifically, first, a resist is applied on the insulating layer 16. Desired patterning is performed on the resist by photolithography. Dry etching is performed using the patterned resist as a mask, and an opening that penetrates the insulating layer 16 and reaches the back surface wiring 15 is formed. Further, external connection terminals 17 made of solder balls are formed so as to fill the opening (FIG. 4D).

  Next, the semiconductor wafer 20 that has undergone the above-described process is separated into chips. More specifically, the semiconductor wafer 20 is mounted on the scribe device, and the semiconductor wafer 20 is separated into individual semiconductor elements 11 (that is, in units of chips) by a diamond saw. When this step is completed, the manufacture of the semiconductor device 10 is completed (FIG. 4E). The semiconductor wafer 20 may be formed into chips by dicing using a pulse laser.

  As described above, in the method for manufacturing a semiconductor device of the present invention, a second adhesive layer made of an adhesive not containing an additive is formed on the first adhesive layer made of an adhesive containing an additive. A laminated adhesive is formed, the laminated adhesive is attached to the semiconductor element so that the first adhesive layer is adhered to the semiconductor element, and the openings penetrating the first adhesive layer and the second adhesive layer are laminated and bonded It is formed on the body and the adhesive residue in the opening is removed.

  By sticking the laminated adhesive as described above on the semiconductor element, it is possible to eliminate the exposure of the filler when the adhesive residue is removed. As a result, when the light transmissive member is pasted on the laminated adhesive body, the laminated adhesive body and the light transmissive member can be pasted without any gap, so that a high-quality semiconductor device can be manufactured.

  In the semiconductor device of the present invention, a semiconductor element, a first adhesive layer made of an adhesive containing an additive, and a second adhesive layer made of an adhesive not containing an additive are sequentially stacked on the semiconductor element. And a laminated adhesive body having an opening penetrating the first adhesive layer and the second adhesive layer, and a light transmissive member attached on the second adhesive layer. The opening size of the opening is the same in the first adhesive layer and the second adhesive layer.

  Due to the structure of the semiconductor device as described above, the laminated adhesive body and the light transmission member are attached with no gap. Moreover, since the opening dimension of an opening part is the same, the protrusion part of a lamination | stacking adhesive body does not exist. Therefore, the semiconductor device of the present invention can have high quality.

  The laminated adhesive body 12 may not have photosensitivity. In such a case, a resist mask having a desired shape may be formed on the laminated adhesive body 12 and the laminated adhesive body 12 may be etched. The laminated adhesive body 12 is not limited to the negative type, and may be a positive type. Furthermore, the first adhesive layer 12a and the second adhesive layer 12b may be made of different types of photosensitive films. For example, the first adhesive layer 12a may be a negative type and the second adhesive layer 12b may be a positive type. Furthermore, the laminated adhesive body 12 is not limited to a film type, and may be formed by a spin coat method or the like.

  Moreover, the structure of the laminated adhesive body 12 is not limited to the two-layer laminated structure of the said Example. For example, the 1st contact bonding layer 12a may be comprised from the contact bonding layer containing the filler 19, and the contact bonding layer which does not contain. More specifically, the laminated adhesive body 12 may have a structure (a three-layer laminated structure) in which an adhesive layer containing the filler 19 is sandwiched between adhesive layers that do not contain a filler.

  In the manufacturing method described above, the laminated adhesive body 12 before photolithography is attached to the semiconductor wafer 20. However, the laminated adhesive body 12 before photolithography may be attached to the cover glass 13. In such a case, the laminated adhesive body 12 in a state where photolithography is performed (that is, a state where the opening 31 is formed) is attached to the semiconductor wafer 20. In such a case, even if an adhesive residue exists on the surface and side surfaces of the laminated adhesive body 12, the quality of the semiconductor device 10 does not deteriorate as long as the adhesive residue is very small. This is because the position where the adhesive residue exists is separated from the formation surface of the semiconductor element 11. In such a case, a portion of the surface of the cover glass 13 exposed from the opening 31 of the laminated adhesive body 12 becomes a transmission region. A portion of the cover glass 11 to which the laminated adhesive body 12 is attached becomes an adhesive region.

  Furthermore, the structure of the semiconductor device 10 is not limited to the above-described CSP type, and may be, for example, a MEMS (Micro Electro Mechanical Systems) type sensor.

DESCRIPTION OF SYMBOLS 10 Semiconductor device 11 Semiconductor element 12 Laminated adhesive body 12a 1st adhesive layer 12b 2nd adhesive layer 13 Cover glass 14 Embedded wiring 15 Back surface wiring 16 Insulating layer 17 External connection terminal 18 Space 19 Filler

Claims (21)

A laminated adhesive forming step of forming a laminated adhesive by forming a second adhesive layer made of an adhesive not containing the additive on the first adhesive layer made of an adhesive containing the additive;
Attaching the laminated adhesive to the semiconductor element such that the first adhesive layer is adhered to the semiconductor element;
An opening forming step of forming an opening penetrating the first adhesive layer and the second adhesive layer in the laminated adhesive body;
Removing the adhesive residue in the opening. A method for manufacturing a semiconductor device, comprising:   The manufacturing method according to claim 1, wherein in the opening forming step, the opening is formed simultaneously with respect to the first adhesive layer and the second adhesive layer.   The manufacturing method according to claim 2, wherein an opening size of the opening is the same in the first adhesive layer and the second adhesive layer.   The manufacturing method according to claim 1, wherein the first adhesive layer and the second adhesive layer have photosensitivity.   The manufacturing method according to claim 4, wherein the first adhesive layer and the second adhesive layer have the same type of photosensitivity.   The manufacturing method according to claim 5, wherein the first adhesive layer and the second adhesive layer have negative photosensitivity.   The manufacturing method according to claim 4, wherein the first adhesive layer and the second adhesive layer are of a film type.   The manufacturing method according to claim 1, wherein the first adhesive layer has an adhesive layer that does not contain the additive. A semiconductor element;
A first adhesive layer made of an adhesive containing an additive and a second adhesive layer made of an adhesive not containing the additive have a laminated structure sequentially laminated on the semiconductor element, and the first A laminated adhesive body comprising an adhesive layer and an opening penetrating the second adhesive layer;
A light transmissive member affixed on the second adhesive layer,
An opening size of the opening is the same in the first adhesive layer and the second adhesive layer.   The adhesive residue generated with the formation of the opening is removed from the side surface of the second adhesive layer and the interface portion between the second adhesive layer and the light transmissive member. The semiconductor device according to claim 9.   11. The semiconductor device according to claim 9, wherein the first adhesive layer and the second adhesive layer have photosensitivity.   The semiconductor device according to claim 11, wherein the first adhesive layer and the second adhesive layer have the same type of photosensitivity.   The semiconductor device according to claim 12, wherein the first adhesive layer and the second adhesive layer have negative photosensitivity.   The semiconductor device according to claim 11, wherein the first adhesive layer and the second adhesive layer are of a film type.   The semiconductor device according to claim 9, wherein the first adhesive layer includes an adhesive layer that does not contain the additive. Providing a first substrate having a plurality of transmissive regions and an adhesive region surrounding the transmissive regions on a surface;
Forming a laminated adhesive body in which a photosensitive first adhesive layer containing an additive and a photosensitive second adhesive layer not containing an additive are sequentially laminated on the surface of the first substrate; When,
Removing the first adhesive layer and the second adhesive layer formed on the transmissive region by exposure and development processing;
Removing a residue of the first adhesive layer and the second adhesive layer on the transmission region;
Pasting the second substrate over the transmissive region via the second adhesive layer;
A method for manufacturing a semiconductor device, comprising:   The method of manufacturing a semiconductor device according to claim 16, wherein the first substrate is a light-transmitting substrate, and the second substrate is a semiconductor substrate.   The method for manufacturing a semiconductor device according to claim 16, wherein the additive is a filler.   The method for manufacturing a semiconductor device according to claim 16, wherein the residue is removed by ashing.   The semiconductor device according to claim 16, wherein the first adhesive layer and the second adhesive layer are negative types.   21. The semiconductor device according to claim 16, wherein the first adhesive layer and the second adhesive layer are of a film type.

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