JP2010212651A - Ｉｉｉ族窒化物半導体素子、エピタキシャル基板、及びｉｉｉ族窒化物半導体素子を作製する方法 - Google Patents
Ｉｉｉ族窒化物半導体素子、エピタキシャル基板、及びｉｉｉ族窒化物半導体素子を作製する方法 Download PDFInfo
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- JP2010212651A JP2010212651A JP2009207425A JP2009207425A JP2010212651A JP 2010212651 A JP2010212651 A JP 2010212651A JP 2009207425 A JP2009207425 A JP 2009207425A JP 2009207425 A JP2009207425 A JP 2009207425A JP 2010212651 A JP2010212651 A JP 2010212651A
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- gallium nitride
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- based semiconductor
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- nitride based
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 573
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 142
- 239000000758 substrate Substances 0.000 title claims description 69
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 410
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 397
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 221
- 239000001301 oxygen Substances 0.000 claims abstract description 221
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 221
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 94
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 54
- 229910052757 nitrogen Inorganic materials 0.000 claims description 47
- 238000000034 method Methods 0.000 claims description 37
- 239000002994 raw material Substances 0.000 claims description 35
- 239000000463 material Substances 0.000 claims description 30
- 229910021529 ammonia Inorganic materials 0.000 claims description 27
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 20
- 229910052799 carbon Inorganic materials 0.000 claims description 20
- 230000004888 barrier function Effects 0.000 claims description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 14
- 239000012535 impurity Substances 0.000 claims description 11
- 230000000903 blocking effect Effects 0.000 claims description 7
- 238000000746 purification Methods 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 abstract description 50
- 239000013078 crystal Substances 0.000 abstract description 32
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 26
- 238000005253 cladding Methods 0.000 description 25
- 229910002704 AlGaN Inorganic materials 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 12
- 239000002019 doping agent Substances 0.000 description 11
- 239000011777 magnesium Substances 0.000 description 9
- 239000000203 mixture Substances 0.000 description 9
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 238000005401 electroluminescence Methods 0.000 description 8
- 238000001194 electroluminescence spectrum Methods 0.000 description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 101100416997 Homo sapiens RNPS1 gene Proteins 0.000 description 5
- 102100039323 RNA-binding protein with serine-rich domain 1 Human genes 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 5
- 230000010287 polarization Effects 0.000 description 5
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 238000003776 cleavage reaction Methods 0.000 description 4
- 239000013256 coordination polymer Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 230000007017 scission Effects 0.000 description 4
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000001771 impaired effect Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 230000014759 maintenance of location Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000005121 nitriding Methods 0.000 description 3
- 238000005424 photoluminescence Methods 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- -1 InGaN Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 238000001451 molecular beam epitaxy Methods 0.000 description 1
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- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009207425A JP2010212651A (ja) | 2009-09-08 | 2009-09-08 | Ｉｉｉ族窒化物半導体素子、エピタキシャル基板、及びｉｉｉ族窒化物半導体素子を作製する方法 |
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| Application Number | Priority Date | Filing Date | Title |
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| JP2009207425A JP2010212651A (ja) | 2009-09-08 | 2009-09-08 | Ｉｉｉ族窒化物半導体素子、エピタキシャル基板、及びｉｉｉ族窒化物半導体素子を作製する方法 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009058057A Division JP4375497B1 (ja) | 2009-03-11 | 2009-03-11 | Ｉｉｉ族窒化物半導体素子、エピタキシャル基板、及びｉｉｉ族窒化物半導体素子を作製する方法 |
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| Publication Number | Publication Date |
|---|---|
| JP2010212651A true JP2010212651A (ja) | 2010-09-24 |
| JP2010212651A5 JP2010212651A5 (enExample) | 2012-05-24 |
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| JP2009207425A Pending JP2010212651A (ja) | 2009-09-08 | 2009-09-08 | Ｉｉｉ族窒化物半導体素子、エピタキシャル基板、及びｉｉｉ族窒化物半導体素子を作製する方法 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012060299A1 (ja) * | 2010-11-05 | 2012-05-10 | 住友電気工業株式会社 | Iii族窒化物半導体素子、iii族窒化物半導体素子を作製する方法、及びエピタキシャル基板 |
| WO2013011722A1 (ja) * | 2011-07-21 | 2013-01-24 | 住友電気工業株式会社 | Iii族窒化物半導体発光素子、及びiii族窒化物半導体発光素子を作製する方法 |
| WO2013121927A1 (ja) * | 2012-02-14 | 2013-08-22 | ソニー株式会社 | 半導体素子 |
| JP2014041917A (ja) * | 2012-08-22 | 2014-03-06 | Sumitomo Electric Ind Ltd | Ｉｉｉ族窒化物半導体を作製する方法、半導体素子を作製する方法、ｉｉｉ族窒化物半導体装置、熱処理を行う方法 |
| CN110731002A (zh) * | 2017-06-15 | 2020-01-24 | 赛奥科思有限公司 | 氮化物半导体层叠物、半导体装置、氮化物半导体层叠物的制造方法、氮化物半导体自支撑基板的制造方法以及半导体装置的制造方法 |
| CN113690351A (zh) * | 2021-06-30 | 2021-11-23 | 华灿光电（浙江）有限公司 | 微型发光二极管外延片及其制造方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002208732A (ja) * | 1994-09-19 | 2002-07-26 | Toshiba Corp | 化合物半導体装置 |
| JP2007201195A (ja) * | 2006-01-26 | 2007-08-09 | Sumitomo Electric Ind Ltd | 窒化物半導体発光素子 |
| JP2008078186A (ja) * | 2006-09-19 | 2008-04-03 | Mitsubishi Chemicals Corp | 窒化物系化合物半導体の結晶成長方法 |
| JP2009021361A (ja) * | 2007-07-11 | 2009-01-29 | Sumitomo Electric Ind Ltd | 窒化物系半導体発光素子、および窒化物系半導体発光素子を作製する方法 |
-
2009
- 2009-09-08 JP JP2009207425A patent/JP2010212651A/ja active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002208732A (ja) * | 1994-09-19 | 2002-07-26 | Toshiba Corp | 化合物半導体装置 |
| JP2007201195A (ja) * | 2006-01-26 | 2007-08-09 | Sumitomo Electric Ind Ltd | 窒化物半導体発光素子 |
| JP2008078186A (ja) * | 2006-09-19 | 2008-04-03 | Mitsubishi Chemicals Corp | 窒化物系化合物半導体の結晶成長方法 |
| JP2009021361A (ja) * | 2007-07-11 | 2009-01-29 | Sumitomo Electric Ind Ltd | 窒化物系半導体発光素子、および窒化物系半導体発光素子を作製する方法 |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103190042A (zh) * | 2010-11-05 | 2013-07-03 | 住友电气工业株式会社 | Iii族氮化物半导体元件、制造iii族氮化物半导体元件的方法及外延基板 |
| JP2012104515A (ja) * | 2010-11-05 | 2012-05-31 | Sumitomo Electric Ind Ltd | Ｉｉｉ族窒化物半導体素子、ｉｉｉ族窒化物半導体素子を作製する方法、及びエピタキシャル基板 |
| WO2012060299A1 (ja) * | 2010-11-05 | 2012-05-10 | 住友電気工業株式会社 | Iii族窒化物半導体素子、iii族窒化物半導体素子を作製する方法、及びエピタキシャル基板 |
| US8809868B2 (en) | 2010-11-05 | 2014-08-19 | Sumitomo Electric Industries, Ltd. | Group-III nitride semiconductor device, method for fabricating Group-III nitride semiconductor device, and epitaxial substrate |
| US8872156B2 (en) | 2011-07-21 | 2014-10-28 | Sumitomo Electric Industries, Ltd. | Group III nitride semiconductor light emitting device and method of fabricating group III nitride semiconductor light emitting device |
| JP2013026452A (ja) * | 2011-07-21 | 2013-02-04 | Sumitomo Electric Ind Ltd | Ｉｉｉ族窒化物半導体発光素子、及びｉｉｉ族窒化物半導体発光素子を作製する方法 |
| WO2013011722A1 (ja) * | 2011-07-21 | 2013-01-24 | 住友電気工業株式会社 | Iii族窒化物半導体発光素子、及びiii族窒化物半導体発光素子を作製する方法 |
| WO2013121927A1 (ja) * | 2012-02-14 | 2013-08-22 | ソニー株式会社 | 半導体素子 |
| JP2013168393A (ja) * | 2012-02-14 | 2013-08-29 | Sony Corp | 半導体素子 |
| US9231375B2 (en) | 2012-02-14 | 2016-01-05 | Sony Corporation | Semiconductor device |
| JP2014041917A (ja) * | 2012-08-22 | 2014-03-06 | Sumitomo Electric Ind Ltd | Ｉｉｉ族窒化物半導体を作製する方法、半導体素子を作製する方法、ｉｉｉ族窒化物半導体装置、熱処理を行う方法 |
| CN110731002A (zh) * | 2017-06-15 | 2020-01-24 | 赛奥科思有限公司 | 氮化物半导体层叠物、半导体装置、氮化物半导体层叠物的制造方法、氮化物半导体自支撑基板的制造方法以及半导体装置的制造方法 |
| CN110731002B (zh) * | 2017-06-15 | 2024-02-02 | 住友化学株式会社 | 氮化物半导体层叠物、半导体装置、氮化物半导体层叠物的制造方法、氮化物半导体自支撑基板的制造方法以及半导体装置的制造方法 |
| CN113690351A (zh) * | 2021-06-30 | 2021-11-23 | 华灿光电（浙江）有限公司 | 微型发光二极管外延片及其制造方法 |
| CN113690351B (zh) * | 2021-06-30 | 2024-05-07 | 华灿光电（浙江）有限公司 | 微型发光二极管外延片及其制造方法 |
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