JP2010208277A5 - - Google Patents

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Publication number
JP2010208277A5
JP2010208277A5 JP2009059490A JP2009059490A JP2010208277A5 JP 2010208277 A5 JP2010208277 A5 JP 2010208277A5 JP 2009059490 A JP2009059490 A JP 2009059490A JP 2009059490 A JP2009059490 A JP 2009059490A JP 2010208277 A5 JP2010208277 A5 JP 2010208277A5
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Japan
Prior art keywords
plastic material
substrate
atoms
material according
gas
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Pending
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JP2009059490A
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Japanese (ja)
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JP2010208277A (en
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Priority to JP2009059490A priority Critical patent/JP2010208277A/en
Priority claimed from JP2009059490A external-priority patent/JP2010208277A/en
Publication of JP2010208277A publication Critical patent/JP2010208277A/en
Publication of JP2010208277A5 publication Critical patent/JP2010208277A5/ja
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Claims (8)

プラスチックからなる基材の基材表面に、炭素原子および水素原子を主構成原子として含む非晶質炭素系素材からなる、厚みにおいて±１０％以内の均一度合を有する均一被膜が、幅３０ｃｍ以上、かつ、面積９００ｃｍ２以上の大きさで形成されていることを特徴とするプラスチック系材料。 A uniform film made of an amorphous carbon-based material containing carbon atoms and hydrogen atoms as main constituent atoms on the substrate surface of a plastic substrate, having a uniformity degree within ± 10% in thickness, is 30 cm or more in width, A plastic material having an area of 900 cm 2 or more. 前記非晶質炭素系素材は、酸素原子と炭素原子の個数比が３：９７〜２０：８０となる割合で酸素原子を含有する、請求項１に記載のプラスチック系材料。   2. The plastic material according to claim 1, wherein the amorphous carbon-based material contains oxygen atoms at a ratio in which the number ratio of oxygen atoms to carbon atoms is 3:97 to 20:80. 前記均一被膜は、酸素ガス透過係数として０．０１〜０．０５ｃｍ３（ＳＴＰ）・ｍｍ／ｍ２・ｄａｙ・ａｔｍのガスバリア性を有する、請求項１または２に記載のプラスチック系材料。 3. The plastic material according to claim 1, wherein the uniform coating has a gas barrier property of 0.01 to 0.05 cm 3 (STP) · mm / m 2 · day · atm as an oxygen gas permeability coefficient. 前処理用ガスに高周波電圧を常圧下で印加して放電プラズマを発生させ、該放電プラズマをプラスチックからなる基材に接触させて基材表面を活性化させる前処理工程を実施した後に、雰囲気ガスに高周波電圧を常圧下で印加して放電プラズマを発生させ、該放電プラズマを前記基材に接触させることにより、前記基材の基材表面に、炭素原子および水素原子を主構成原子として含む非晶質炭素系素材からなる、厚みにおいて±１０％以内の均一度合を有する均一被膜を形成させる被膜形成工程を実施することを特徴とするプラスチック系材料の製造方法。 After performing a pretreatment step of applying a high frequency voltage to the pretreatment gas under normal pressure to generate discharge plasma and bringing the discharge plasma into contact with a plastic substrate to activate the substrate surface, the atmosphere gas A high frequency voltage is applied to the substrate under normal pressure to generate discharge plasma, and the discharge plasma is brought into contact with the substrate, whereby the substrate surface of the substrate contains carbon atoms and hydrogen atoms as main constituent atoms. A method for producing a plastic material, comprising performing a film forming step of forming a uniform film made of a crystalline carbon-based material and having a uniformity degree within ± 10% in thickness . 前記前処理用ガスは、酸素を含有している、請求項４に記載のプラスチック系材料の製造方法。 The method for producing a plastic material according to claim 4 , wherein the pretreatment gas contains oxygen. 前記雰囲気ガスは、アセチレンを５０〜７５体積％の比率で含有している、請求項４または５に記載のプラスチック系材料の製造方法。 The method for producing a plastic material according to claim 4 or 5 , wherein the atmospheric gas contains acetylene in a ratio of 50 to 75% by volume. 前記雰囲気ガスは、前記高周波電圧によって生起される電界の方向と垂直方向に通気される、請求項４〜６のいずれかに記載のプラスチック系材料の製造方法。 The method for producing a plastic material according to claim 4 , wherein the atmospheric gas is vented in a direction perpendicular to a direction of an electric field generated by the high-frequency voltage. 前記高周波電圧は、矩形波、正弦波または三角波の電圧波形を示す、請求項４〜７のいずれかに記載のプラスチック系材料の製造方法。 The said high frequency voltage is a manufacturing method of the plastics material in any one of Claims 4-7 which shows the voltage waveform of a rectangular wave, a sine wave, or a triangular wave.
JP2009059490A 2009-03-12 2009-03-12 Plastic-based material and production method of the same Pending JP2010208277A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009059490A JP2010208277A (en) 2009-03-12 2009-03-12 Plastic-based material and production method of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009059490A JP2010208277A (en) 2009-03-12 2009-03-12 Plastic-based material and production method of the same

Publications (2)

Publication Number Publication Date
JP2010208277A JP2010208277A (en) 2010-09-24
JP2010208277A5 true JP2010208277A5 (en) 2012-04-26

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Family Applications (1)

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JP2009059490A Pending JP2010208277A (en) 2009-03-12 2009-03-12 Plastic-based material and production method of the same

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Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6427478B2 (en) 2015-11-04 2018-11-21 学校法人慶應義塾 Thin film laminated film, method for manufacturing the same, and apparatus for manufacturing the same

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2840699B2 (en) * 1990-12-12 1998-12-24 株式会社 半導体エネルギー研究所 Film forming apparatus and film forming method
US5688556A (en) * 1994-04-01 1997-11-18 Mobil Oil Corporation Barrier films having vapor coated EVOH surfaces
JPH1112735A (en) * 1997-06-25 1999-01-19 Sekisui Chem Co Ltd Production of diamond-like thin carbon film
JP2000239849A (en) * 1999-02-25 2000-09-05 Hitachi Maxell Ltd Continuous plasma cvd method and cvd device
JP2001192484A (en) * 2000-01-11 2001-07-17 Haruhiko Watanabe Film with excellent surface characteristic
JP2004167976A (en) * 2002-11-22 2004-06-17 Toppan Printing Co Ltd Barrier substrate, apparatus for film forming therefor and barrier container
JP4282360B2 (en) * 2003-04-15 2009-06-17 北海製罐株式会社 Gas barrier plastic film
JP4877934B2 (en) * 2006-05-10 2012-02-15 麒麟麦酒株式会社 Preform for gas barrier plastic container and method for producing gas barrier plastic container
JP5084182B2 (en) * 2006-06-07 2012-11-28 麒麟麦酒株式会社 Coated plastic products and coatings
JP2008056546A (en) * 2006-09-01 2008-03-13 Ihi Corp Production device and production method for carbon structure
JP2008150679A (en) * 2006-12-19 2008-07-03 Dialight Japan Co Ltd Method for forming carbon film onto surface of substrate, and device performing the same

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