JP2010206062A5

JP2010206062A5 -

Info

Publication number: JP2010206062A5
Application number: JP2009051762A
Authority: JP
Filing date: 2009-03-05
Publication date: 2012-02-23
Anticipated expiration: 2029-03-05

Description

本発明の上記目的は、以下の発明によって基本的に達成された。
１）基材上に導電性メッシュを有する導電性フィルムであって、
該導電性メッシュは、金属層（Ａ）及び金属化合物層（Ｂ）の積層構成であり、基材、金属層（Ａ）、及び金属化合物層（Ｂ）をこの順に有し、
該導電性メッシュは、合計厚みが１．１μｍ以上２．５μｍ未満、金属層（Ａ）の厚みが１．０μｍ以上２．４μｍ未満、線幅が１５μｍ以上３０μｍ未満、ピッチが２５０μｍ以上４００μｍ未満であり、
かつ表面抵抗値が０．３Ω／□未満であることを特徴とする、導電性フィルム。
２）導電性フィルムの透過率が７５％以上である、前記１）に記載の導電性フィルム。
３）前記金属層（Ａ）の金属が銅であり、前記金属化合物層（Ｂ）の金属化合物が、金属窒化物、金属酸化物、及び金属硫化物からなる群より選ばれる少なくとも１種である、前記１）または２）に記載の導電性フィルム。
４）前記基材と前記導電性メッシュとが、直接積層した構成である、前記１）〜３）のいずれかに記載の導電性フィルム。
５）基材上に、金属層（Ａ）のベタ膜と金属化合物層（Ｂ）のベタ膜を形成した後、パターン加工することを特徴とする、前記１）〜４）のいずれかに記載の導電性フィルムの製造方法。
６）金属層（Ａ）のベタ膜と金属化合物層（Ｂ）のベタ膜とを形成する方法が、気相製膜法であることを特徴とする、前記５）に記載の導電性フィルムの製造方法。
７）金属層（Ａ）のベタ膜を真空蒸着法で形成し、金属化合物層（Ｂ）のベタ膜をスパッタリング法で形成することを特徴とする、前記５）又は６）に記載の導電性フィルムの製造方法。 The above object of the present invention has been basically achieved by the following invention.
1) A conductive film having a conductive mesh on a substrate,
The conductive mesh is a laminated structure of a metal layer (A) and a metal compound layer (B), and has a base material, a metal layer (A), and a metal compound layer (B) in this order,
The conductive mesh has a total thickness of 1.1 μm or more and less than 2.5 μm, a thickness of the metal layer (A) of 1.0 μm or more and less than 2.4 μm, a line width of 15 μm or more and less than 30 μm, and a pitch of 250 μm or more and less than 400 μm. Yes,
And the surface resistance value is less than 0.3 ohm / square, The electroconductive film characterized by the above-mentioned.
2) The conductive film as described in 1) above, wherein the transmittance of the conductive film is 75% or more.
3) The metal of the metal layer (A) is copper, and the metal compound of the metal compound layer (B) is at least one selected from the group consisting of metal nitrides, metal oxides, and metal sulfides. The conductive film as described in 1) or 2) above.
4) The conductive film according to any one of 1) to 3), wherein the base material and the conductive mesh are directly laminated.
5) The solid film of the metal layer (A) and the solid film of the metal compound layer (B) are formed on the base material, and then pattern processing is performed. The manufacturing method of an electroconductive film.
6) The method for forming a solid film of the metal layer (A) and a solid film of the metal compound layer (B) is a vapor deposition method, wherein the conductive film according to 5) is used. Production method.
7) The conductivity according to 5) or 6) above, wherein the solid film of the metal layer (A) is formed by a vacuum deposition method, and the solid film of the metal compound layer (B) is formed by a sputtering method. A method for producing a film.

本発明にかかる導電性メッシュは、基材上のほぼ全域に、金属層（Ａ）のベタ膜と金属化合物層（Ｂ）のベタ膜を積層形成した後、パターン加工して形成することが好ましい。ここでベタ膜とは、パターン加工する前の連続した膜を意味する。 The conductive mesh according to the present invention is preferably formed by laminating a solid film of the metal layer ( A ) and a solid film of the metal compound layer ( B ) over almost the entire area of the base material, and then patterning it. . Here, the solid film means a continuous film before pattern processing.

本発明において、基材上に金属層（Ａ）のベタ膜と金属化合物層（Ｂ）のベタ膜とを積層形成する方法として、気相製膜法、メッキ法が挙げられるが、環境上の問題や製膜の安定性の観点から気相製膜法が好ましく用いられる。特に気相製膜法のみで金属層（Ａ）のベタ膜と金属化合物層（Ｂ）のベタ膜を積層することが好ましい。 In the present invention, as a method of laminating and forming a solid film of the metal layer ( A ) and a solid film of the metal compound layer ( B ) on the base material, a vapor deposition method and a plating method can be mentioned. From the viewpoint of problems and stability of film formation, a gas phase film formation method is preferably used. In particular, it is preferable to laminate the solid film of the metal layer ( A ) and the solid film of the metal compound layer ( B ) only by the vapor deposition method.

気相製膜法として、複数の方法を組み合わせて用いることもできる。例えば、金属層（Ａ）のベタ膜を真空蒸着法、金属化合物層（Ｂ）のベタ膜をスパッタリング法で形成することができる。 A combination of a plurality of methods can be used as the vapor deposition method. For example, the solid film of the metal layer ( A ) can be formed by vacuum deposition, and the solid film of the metal compound layer ( B ) can be formed by sputtering.

前述した導電性メッシュの合計厚みは、上記のようにして基材上に積層される金属層（Ａ）のベタ膜の厚み、及び金属化合物層（Ｂ）のベタ膜の厚みを制御することによって調整することができる。基材上に積層された金属層（Ａ）のベタ膜と金属化合物層（Ｂ）のベタ膜は、その後にパターン加工されても、ほぼその厚みと同程度の導電性メッシュが形成されるので、導電性メッシュの設計に合わせて金属層（Ａ）のベタ膜と金属化合物層（Ｂ）のベタ膜とが製膜される。 The total thickness of the conductive mesh described above is controlled by controlling the thickness of the solid film of the metal layer ( A ) and the thickness of the solid film of the metal compound layer ( B ) laminated on the base material as described above. Can be adjusted. Even if the solid film of the metal layer ( A ) and the solid film of the metal compound layer ( B ) laminated on the base material are patterned thereafter, a conductive mesh of almost the same thickness is formed. The solid film of the metal layer ( A ) and the solid film of the metal compound layer ( B ) are formed in accordance with the design of the conductive mesh.

金属層（Ａ）のベタ膜と金属化合物層（Ｂ）のベタ膜のパターン加工方法については、２つの好ましい加工方法が挙げられるが、それらについて以下に説明する。 There are two preferred processing methods for the pattern processing method of the solid film of the metal layer ( A ) and the solid film of the metal compound layer ( B ), which will be described below.

以下の説明において、金属層（Ａ）のベタ膜と金属化合物層（Ｂ）のベタ膜が積層されたものを、金属積層膜と略記する。 In the following description, a solid film of a metal layer ( A ) and a solid film of a metal compound layer ( B ) are abbreviated as a metal laminated film.

光学用ポリエステルフィルム（東レ（株）製のルミラー（登録商標）ＱＴ９６、厚み１００μｍ）の片面に、スパッタリング法によりニッケル層（厚み０．０１μｍ）を製膜し、その上に真空蒸着法により銅層（厚み１．５μｍ）を製膜して、ニッケル層と銅層からなる金属層（Ａ）のベタ膜を形成した。更に金属層（Ａ）の上に、スパッタリング法により窒化銅（厚み０．０３μｍ）を製膜して金属化合物層（Ｂ）を形成した。 A nickel layer (thickness 0.01 μm) is formed by sputtering on one side of an optical polyester film (Lumirror (registered trademark) QT96 manufactured by Toray Industries, Inc., thickness 100 μm), and a copper layer is formed thereon by vacuum evaporation. (Thickness of 1.5 μm) was formed to form a solid film of a metal layer ( A ) composed of a nickel layer and a copper layer. Further, copper nitride (thickness: 0.03 μm) was formed on the metal layer ( A ) by a sputtering method to form a metal compound layer ( B ).

続いて、上記の金属化合物層（Ｂ）の表面にレジスト層を塗工形成し、正方形の格子状メッシュパターンのマスクを介してレジスト層を露光、現像し、次いでエッチング処理を施し、最後に導電性メッシュ上のレジストを剥離除去して、導電性メッシュを作製した。 Subsequently, a resist layer is applied and formed on the surface of the metal compound layer ( B ), the resist layer is exposed and developed through a mask having a square lattice mesh pattern, and then subjected to an etching treatment, and finally conductive. The resist on the conductive mesh was peeled and removed to produce a conductive mesh.

Claims

A conductive film having a conductive mesh on a substrate,
The conductive mesh is a laminated structure of a metal layer (A) and a metal compound layer (B), and has a base material, a metal layer (A), and a metal compound layer (B) in this order,
The conductive mesh has a total thickness of 1.1 μm or more and less than 2.5 μm, a thickness of the metal layer (A) of 1.0 μm or more and less than 2.4 μm, a line width of 15 μm or more and less than 30 μm, and a pitch of 250 μm or more and less than 400 μm. Yes,
And the surface resistance value is less than 0.3 ohm / square, The electroconductive film characterized by the above-mentioned.

The electroconductive film of Claim 1 whose transmittance | permeability of an electroconductive film is 75% or more.

The metal of the metal layer (A) is copper, and the metal compound of the metal compound layer (B) is at least one selected from the group consisting of metal nitrides, metal oxides, and metal sulfides. Item 3. The conductive film according to Item 1 or 2.

The conductive film according to claim 1, wherein the base material and the conductive mesh are directly laminated.

The conductive film according to any one of claims 1 to 4, wherein the solid film of the metal layer (A) and the solid film of the metal compound layer (B) are formed on the base material, and then patterned. A method for producing a film.

The method for producing a conductive film according to claim 5, wherein the method for forming the solid film of the metal layer (A) and the solid film of the metal compound layer (B) is a vapor deposition method. .

The solid film of the metal layer (A) is formed by a vacuum deposition method, and the solid film of the metal compound layer (B) is formed by a sputtering method, The conductive film according to claim 5 or 6, Method.