JP2010199325A - Apparatus and method of fabricating thin-film photoelectric conversion element - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an apparatus and a method of fabricating a thin-film photoelectric conversion element which secures the distance between a belt-like flexible substrate and the electrode surface with high precision while exhibiting excellent utilization efficiency of the belt-like flexible substrate by securing a wide film deposition range thereof, and obtains a high quality multi-layered thin film. <P>SOLUTION: The apparatus of fabricating a thin-film photoelectric conversion element includes a plurality of film deposition mechanisms 10A-10C arranged in series, and substrate transfer units 3 and 5 which sequentially transfer the belt-like flexible substrates 2 to the plurality of film deposition mechanisms while stopping the film deposition surface thereof. The film deposition mechanisms 10A-10C have openings 21g and 21h which do not touch the film deposition surface at the carry-in part and carry-out part of the belt-like flexible substrate 2. When the belt-like flexible substrate 2 is stopping, the film deposition mechanisms 10A-10C perform the film deposition operation for depositing a film by touching the front and rear surfaces around the film deposition surface through sealing materials 21i and 31i except the openings, thereby forming vacuum atmosphere, and the release operation for permitting transfer of the belt-like flexible substrate by separating the sealing materials at least from around the film deposition surface. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a manufacturing apparatus and a manufacturing method of a thin film photoelectric conversion element such as a solar cell that converts light energy into electric energy using a strip-like flexible substrate.

  As a method and apparatus for manufacturing this type of thin film photoelectric conversion element, film formation is intermittently performed, and at the time of film formation, the substrate is stopped and an airtight film formation chamber is formed by a wall that is in close contact with a sealing material. A film is formed therein. Then, the ground electrode in contact with the film forming chamber wall and the back surface is retracted, and the floating substrate is transported to move to the next film forming position without damaging the substrate. An element manufacturing method and a manufacturing apparatus are known (see, for example, Patent Document 1).

  In such a thin film photoelectric conversion element manufacturing method and manufacturing apparatus, the step type of a chemical vapor deposition apparatus for forming amorphous thin films of an N-type layer, an I-type layer, and a P-type layer of an amorphous solar cell is usually used. As a roll-to-roll type plasma chemical vapor deposition apparatus (hereinafter referred to as a first conventional example), as shown in FIGS. 6 and 7, as a film forming mechanism for forming an amorphous thin film of one layer portion, a belt-like structure is used. The first holding part 101 that supports the ground electrode and the second holding part 102 that supports the high-frequency electrode can be moved relative to each other across the belt-like flexible board 100 in a direction orthogonal to the conveyance direction of the flexible board 100. The sealing material 114 is disposed on the outer peripheral side of the first sandwiching portion 101 and the second sandwiching portion 102 so as to surround the film forming surface 113, and the first sandwiching portion is in a stopped state of the belt-shaped flexible substrate 100. 101 and the sealing material 114 of the 2nd clamping part 102 are strip | belt-shaped flexibility And so as to form a deposition chamber having an airtight by contacting the plate 100.

Three film forming mechanisms having the above-described configuration are arranged in series for the N-type layer, the I-type layer, and the P-type layer, and the belt-like flexible substrate 100 is sequentially transported while stopping at the film forming position. .
In this case, the N-type layer is deposited by the upstream deposition mechanism, then the I-type layer is deposited on the N-type layer by the downstream downstream deposition mechanism, and finally the most downstream side A P-type layer is formed into an I-type layer by a film forming mechanism.
At this time, the film forming position on the strip-shaped flexible substrate 100 is such that the sealing material 114 of the first holding unit 101 and the second holding unit 102 contacts the film forming surface so that the film forming surface is not damaged. In order to achieve this, as shown in FIG. 7, it is necessary to form a film while conveying the belt-like flexible substrate 100 at a pitch larger than the contact position of the sealant 114, and the film formation position can be continued in the conveyance direction. Instead, the film forming position is formed at least by a predetermined interval at which the sealing material contacts in the transport direction. For this reason, there exists an unsolved subject that there exists a limit in improving the utilization efficiency of a strip | belt-shaped flexible board | substrate.

  On the other hand, as shown in FIG. 8, the belt-like flexible substrate 100 is continuously conveyed, and the N-type layer, the I-type layer, and the P-type layer are sequentially formed by three film forming mechanisms. A roll-to-roll type plasma chemical vapor deposition apparatus of the type is known (hereinafter referred to as a second conventional example). In this second conventional example, a first film forming chamber 41A, an I-type layer for forming an N-type layer by drawing a belt-like flexible substrate, on which a back electrode has been formed in advance, from the rewind roll 110 of the roll preparation chamber 40A. Are passed in the order of the second film forming chamber 41B for forming the film and the third film forming chamber 41C for forming the P-type layer, and are wound around the take-up roll 111 of the roll take-out chamber 40B. On the strip-shaped flexible substrate 100, an N-type layer is formed in the first film formation chamber 41A, an I-type layer is formed in the second film formation chamber 41B, and finally the third film formation chamber 41C. A P-type layer is formed and each amorphous thin film layer is laminated.

  Each of the film forming chambers 41A to 41C is provided with a ground electrode 50A and a high frequency electrode 50B, and a reactive gas introduced into the film forming chamber from the introduction port 50C is excited by a high frequency electric field formed between these electrodes. To a plasma state. Unnecessary gas after the reaction is exhausted to the outside through the exhaust port 50D. However, a reaction gas corresponding to the type of thin film layer to be formed is introduced into each film formation chamber. In FIG. 8, although description is omitted, an inert gas is circulated in the connection portions of the film forming chambers 41A to 41C, thereby separating the processes in the film forming chambers 41A to 41C.

  The amorphous thin film layers of the N-type layer, the I-type layer, and the P-type layer are laminated in this order on the main surface of the belt-like flexible substrate 100 using the apparatus of the second conventional example shown in FIG. In this case, first, a reaction gas for forming an N-type layer, an I-type layer, and a P-type layer is introduced in this order from the film formation chamber 41A close to the roll preparation chamber 40A. Then, the belt-shaped flexible substrate 100 housed in the roll preparation chamber 40A is sent out, and first passes through the film formation chamber 41A for forming an N-type amorphous silicon layer. The substrate region on which the N-type layer is formed is led to the film formation chamber 41B for forming the I-type layer, and the I-type layer is formed so as to be stacked on the previous N-type layer. . The substrate region where the N-type layer and the I-type layer are stacked is led to a film formation chamber 41C for forming a P-type layer, and is stacked on the previous N-type layer and I-type layer to form P. A mold layer is deposited. As described above, the N-type layer, the I-type layer, and the P-type layer are sequentially stacked to form a film.

According to the second conventional example, the film forming range of each amorphous thin film layer laminated on the belt-like flexible substrate 100 is as shown in FIGS. 9A and 9B. Since film formation is performed continuously, the film formation surface 113 is continuously used, and the material utilization efficiency is high. However, it is necessary to secure a distance in order to obtain a predetermined film quality with respect to the electrode surface of the strip-shaped flexible substrate 100 during film formation. Since the substrate 100 cannot be suppressed at the contact portion of the heater and the comprehensive film forming chamber as in the first conventional example and is positioned without contact, the distance from the electrode due to wrinkles or vibration of the belt-like flexible substrate 100 There is an unresolved issue that it is difficult to ensure.

Japanese Patent No. 3079830

  However, in the first conventional example, each amorphous thin film can be formed accurately, but the utilization efficiency of the strip-like flexible substrate is lowered, and in the second conventional example, on the contrary, the strip-like flexible substrate is used. Although the use efficiency of the conductive substrate can be increased, it is difficult to secure the distance from the electrode due to wrinkling or vibration of the strip-shaped flexible substrate by forming the film while transporting the strip-shaped flexible substrate. There is an unsolved problem that it cannot be performed, and it is impossible to increase the utilization efficiency of the strip-shaped flexible substrate while performing accurate film formation.

  Therefore, the present invention has been made paying attention to the unsolved problems of the above-described conventional example, ensuring a wide film forming range of the strip-shaped flexible substrate, and excellent in utilization efficiency of the strip-shaped flexible substrate, And it aims at providing the manufacturing apparatus and manufacturing method of a thin film photoelectric conversion element which can ensure the distance of a strip | belt-shaped flexible substrate and an electrode surface with high precision, and can obtain a high quality laminated thin film. .

In order to achieve the above object, a thin film photoelectric conversion element manufacturing apparatus according to claim 1 is a thin film photoelectric conversion element in which a plurality of thin films having different properties are stacked on a strip-shaped flexible substrate to form at least a photoelectric conversion layer. A plurality of film forming mechanisms arranged in series, and a substrate transfer unit that sequentially transfers the belt-like flexible substrate while stopping the film forming surface to the plurality of film forming mechanisms. The film-forming mechanism has an opening that is in non-contact with the film-forming surface in the carrying-in part and the carrying-out part of the belt-like flexible substrate, and the opening is provided when the belt-like flexible substrate is stopped. A film forming operation for forming a film by forming a vacuum atmosphere by contacting the front and back surfaces around the film forming surface with a sealing material, and separating the sealing material from at least the periphery of the film forming surface; It is configured to perform a release operation that allows conveyance of the flexible substrate. There.
According to this configuration, since the film formation mechanism is formed with a non-contact opening on the film formation surface at the entrance and exit of the belt-like flexible substrate, while adopting the step-type roll-to-roll model, A continuous film-formation surface can be formed on the flexible substrate, and while the strip-shaped flexible substrate is stopped at the film-formation position of the film-formation mechanism while increasing the utilization efficiency of the strip-shaped flexible substrate, the opening The seal member can be brought into contact with the portion other than the portion, and the distance between the film formation surface and the electrode on the film formation surface side can be accurately positioned.

  The thin-film photoelectric conversion device manufacturing apparatus according to claim 2 is characterized in that the film forming mechanism includes a pair of electrode housing portions that are relatively movable with the film forming surface of the belt-shaped flexible substrate interposed therebetween, and the pair of electrodes. An opening that is not in contact with the film forming surface formed on the carry-in portion and the carry-out portion of the belt-like flexible substrate of the electrode housing portion facing the film formation surface of the storage portion and the pair of electrode storage portions are formed. A sealing material that contacts the outside of the film-forming surface of the strip-shaped flexible substrate formed on the peripheral wall excluding the opening, and the pair of electrode housing portions, and the sealing material forms a film on the strip-shaped flexible substrate A film forming position where a vacuum atmosphere is formed in contact with the outside of the surface; and a release position where the seal material around the electrode housing portion on at least the film forming surface side of the pair of electrode housing portions is separated from the strip-shaped flexible substrate; And a relative movement control unit for relative movement between the two. .

According to this configuration, the film forming mechanism forms an opening in the carry-in portion and the carry-out portion of the belt-like flexible substrate so that the film-formation surface is not in contact with the belt-like flexible substrate during film formation when the belt-like flexible substrate is stopped. Therefore, even if the belt-shaped flexible substrate is transported at an arbitrary pitch in the transport direction, the film forming surface is not damaged.
The thin-film photoelectric conversion device manufacturing apparatus according to claim 3 is the invention according to claim 2, wherein the film-forming mechanism is configured such that the pair of electrode housing portions is in the film-forming position, A film is formed by applying a high-frequency voltage between an electrode facing the film formation surface of the substrate and an electrode in contact with the electrode on the opposite side of the band-shaped flexible substrate. It is characterized by being composed.

According to this configuration, since the electrode on the side opposite to the film formation surface is in contact with the belt-shaped flexible substrate in a state where the pair of electrode accommodating portions are at the film formation position, The distance between the belt-shaped flexible substrate can be positioned with high accuracy, and a high-quality film can be obtained.
According to a fourth aspect of the present invention, there is provided the thin-film photoelectric conversion device manufacturing apparatus according to any one of the first to third aspects, wherein the plurality of film forming mechanisms are arranged in series at predetermined intervals, The transport unit transports the strip-shaped flexible substrate at a pitch equal to or less than a pitch equal to a transport direction length of an electrode for performing film deposition of the film deposition mechanism.

According to this configuration, the continuous film formation is laminated on the strip-shaped flexible substrate by transporting the strip-shaped flexible substrate at a pitch equal to or less than a pitch equal to the transport direction length of the electrode for film deposition of the deposition mechanism. Can be formed.
The thin film photoelectric conversion device manufacturing apparatus according to claim 5 is the invention according to any one of claims 1 to 3, wherein the plurality of film forming mechanisms are arranged in series at predetermined intervals, and the substrate The transport unit transports the strip-shaped flexible substrate at a pitch equally divided in a transport direction length of an electrode for film formation by the film formation mechanism.

According to this configuration, the thickness of the continuous film formation on the belt-like flexible substrate is reduced by conveying the belt-like flexible substrate at a pitch equal to the length of the electrodes to be deposited by the film-forming mechanism. In this way, the film quality can be made uniform.
Moreover, the manufacturing method of the thin film photoelectric conversion element which concerns on Claim 6 is a manufacturing method of the thin film photoelectric conversion element which laminates | stacks several thin film of a different property on a strip | belt-shaped flexible substrate, and forms a photoelectric conversion layer at least. A transporting step of transporting and stopping the strip-shaped flexible substrate to a deposition position of a plurality of deposition mechanisms arranged in series; and the strip-shaped flexible substrate stopped at the deposition position of the deposition mechanism Having an opening that is not in contact with the film formation surface at the carry-in portion and the carry-out portion of the film formation surface, and sandwiching the periphery of the film formation surface excluding the opening with a sealing material to create a vacuum atmosphere. Forming and depositing the film on the film forming surface, and when the film formation on the film forming surface is completed, the nipping state via the sealing material is released, and the film forming surface is conveyed at a predetermined pitch and stopped. To form a photoelectric conversion layer in which thin films with different properties are stacked It is characterized in Rukoto.

  By adopting this configuration, while adopting a step-type roll-to-roll type, it is possible to form a continuous film formation surface on the belt-like flexible substrate, while increasing the utilization efficiency of the belt-like flexible substrate. The sealing member can be brought into contact with the portion excluding the opening in a state where the belt-like flexible substrate is stopped at the film forming position of the film forming mechanism, and the distance between the film forming surface and the electrode on the film forming surface side can be adjusted. Accurate positioning is possible.

According to a seventh aspect of the present invention, there is provided the method for manufacturing a thin film photoelectric conversion element according to the sixth aspect of the invention, wherein the film-forming step is an electrode facing the film-forming surface of the flexible substrate while being sandwiched by a sealing material. The electrode is formed by applying a high-frequency voltage between the electrode and the electrode in contact with the band-shaped flexible substrate disposed on the opposite side of the band-shaped flexible substrate.
According to this configuration, since the electrode on the opposite side to the film formation surface is in contact with the belt-like flexible substrate while being sandwiched by the sealing material, the electrode opposed to the film formation surface side and the belt-like flexible substrate The distance between them can be positioned with high accuracy, and a high-quality film can be obtained.

According to an eighth aspect of the present invention, there is provided a method for manufacturing a thin film photoelectric conversion element according to the sixth or seventh aspect, wherein the plurality of film forming mechanisms are arranged in series at a predetermined interval, The film is transported at a pitch equal to or shorter than the transport direction length of the electrode of the film forming mechanism.
According to this configuration, a continuous film formation is laminated on the strip-shaped flexible substrate by transporting the strip-shaped flexible substrate at a pitch equal to or less than the pitch in the transport direction of the electrode on which the film is formed. Can do.

A thin film photoelectric conversion element manufacturing method according to claim 9 is the invention according to claim 6 or 7, wherein the plurality of film forming mechanisms are arranged in series at predetermined intervals, It is characterized in that the electrodes are transported at a pitch equally divided in the transport direction length of the electrodes of the film forming mechanism.
According to this configuration, a continuous film thickness is uniformly formed on the belt-like flexible substrate by transporting the belt-like flexible substrate at a pitch equal to the length of the electrodes to be deposited equally. Therefore, the film quality can be made uniform.

  According to the present invention, the film forming mechanism is provided with the opening portions which are not in contact with the film forming surface at the carry-in portion and the carry-out portion of the belt-like flexible substrate, so that the belt-like flexible substrate is intermittently conveyed at a predetermined pitch. However, it is possible to form a film, and a continuous film-forming surface can be formed on the band-shaped flexible substrate to increase the utilization efficiency. Since it contacts the front and back of the substrate, it is possible to position the belt-shaped flexible substrate, maintain the distance between the film formation surface and the electrode facing it with high accuracy, and form a high-quality thin film The effect of being able to be obtained.

It is explanatory drawing which shows the 1st Embodiment of this invention, Comprising: (a) is a front view of the state which removed the front plate, (b) is a side view of the state which removed the right side plate. It is sectional drawing which shows the open state which shows an example of the film-forming mechanism. It is sectional drawing which shows the state which made the common ground electrode which shows an example of the film-forming mechanism contact the strip | belt-shaped flexible substrate. It is sectional drawing which shows the film-forming state which shows an example of the film-forming mechanism. It is explanatory drawing which shows the film-forming state of a strip | belt-shaped flexible board | substrate, Comprising: (a) is a front view, (b) is a side view. It is sectional drawing of the film-forming mechanism which shows a 1st prior art example. It is explanatory drawing which shows the film-forming state of the strip | belt-shaped flexible substrate in a 1st prior art example, Comprising: (a) is a front view, (b) is a side view. It is sectional drawing which shows a 2nd prior art example. It is explanatory drawing which shows the film-forming state of the strip | belt-shaped flexible substrate in a 2nd prior art example, Comprising: (a) is a front view, (b) is a side view.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
FIG. 1 is an overall configuration diagram showing an apparatus for manufacturing a thin film photoelectric conversion element according to the present invention. In the figure, 1 is a vacuum chamber extending in the vertical direction. In this vacuum chamber 1, a substrate delivery chamber 4 is formed in which a delivery roll 3 is disposed in which an upper end portion is wound with a strip-like flexible substrate 2 and delivered, and a lower end portion is sent out from the delivery roll 3. A substrate winding chamber 6 in which a winding roll 5 for winding the flexible substrate 2 is disposed is formed. The strip-shaped flexible substrate 2 fed out from the feed roll 3 is guided by the guide roll 7, and the strip-shaped flexible substrate 2 wound up by the winding roll 5 is guided by the guide roll 8.

  Three film forming mechanisms 10A, 10B, and 10C for inserting the strip-shaped flexible substrate 2 between the substrate delivery chamber 4 and the substrate winding chamber 6 are arranged in series. As shown in FIG. 2, each of the film forming mechanisms 10 </ b> A to 10 </ b> C includes a fixed clamping member 11 and a movable clamping member 12 that are opposed to each other with the conveyance path of the belt-like flexible substrate 2 interposed therebetween. The fixed clamping member 11 includes an electrode housing portion 21 formed of an insulating member fixedly supported on the back plate portion of the vacuum chamber 1, a high-frequency electrode 22 disposed in a non-contact state within the electrode housing portion 21, A conductive support member 23 that supports the high-frequency electrode 22 and a reaction gas introduction pipe 24 are provided.

  The electrode accommodating portion 21 is fixedly supported on the back plate portion of the vacuum chamber 1 by the reaction gas introduction tube 24, and is formed in front of the rectangular bottom plate portion 21a parallel to the belt-like flexible substrate 2 and the outer peripheral edge of the bottom plate portion 21a. There are four peripheral walls 21b to 21e extending to the front, and an electrode housing space 21f that is open at the front surrounded by the bottom plate portion 21a and the peripheral walls 21b to 21e is formed. Here, on the opposing walls 21b and 21c of the peripheral wall 21b in the transport direction of the strip-shaped flexible substrate 2, as shown in FIG. Openings 21g and 21h that are not in contact with the back surface of the conductive substrate 2 are formed. Further, as shown in FIG. 2, the length of the peripheral walls 21d and 21e in the direction orthogonal to the conveying direction of the belt-like flexible substrate 2 is set to be shorter than the distance between the side edges of the belt-like flexible member 2, and the upper end surface. Is formed so as to be in contact with the belt-like flexible substrate 2, and a sealing material 21i such as an O-ring is disposed on the upper end surface.

  The high-frequency electrode 22 is formed in a rectangular plate shape having an area facing the film forming surface of the belt-like flexible substrate 2, and the electrode is accommodated by the conductive support member 23 disposed on the back plate portion of the vacuum chamber 1. It is supported in the electrode accommodating space 21 of the portion 21 so as to face the belt-like flexible substrate 2. As will be described later, the front surface of the high-frequency electrode 22 is set at a position where a predetermined distance is maintained between the high-frequency electrode 22 and the belt-like flexible substrate 2 at the film forming position. Then, the other end of the high frequency power supply 25 whose one end is grounded is connected to the conductive support member 23.

  Further, as shown in FIG. 2, the movable clamping member 22 has a common ground that houses an electrode accommodating portion 31 that faces the electrode accommodating portion 21 of the fixed clamping member 11 and a heater disposed in the electrode accommodating portion 31. The electrode 32, the first moving mechanism 33 that moves the electrode accommodating portion 31 forward and backward relative to the belt-like flexible substrate 2, and the second movement that moves the common ground electrode 32 forward and backward relative to the belt-like flexible substrate 2. And a mechanism 34.

  The electrode accommodating portion 31 includes a bottom plate portion 31a parallel to the belt-like flexible substrate 2 and a peripheral wall 31b extending rightward from the periphery of the bottom plate portion 31a in the same manner as the electrode accommodating portion 21 of the fixed clamping member 11 described above. An electrode housing space 31f having a front end surrounded by the bottom plate portion 31a and the peripheral walls 31b to 31e is formed. Here, on the opposing walls 31b and 31c of the peripheral wall 31b in the transport direction of the belt-like flexible substrate 2, as shown in FIG. Openings 31g and 31h that are not in contact with the back surface of the conductive substrate 2 are formed. Further, as shown in FIG. 2, the length of the peripheral walls 31d and 31e in the direction orthogonal to the conveying direction of the belt-like flexible substrate 2 is set to be shorter than the distance between the side edges of the belt-like flexible member 2, and the upper end surface. Is formed so as to be able to contact the belt-like flexible substrate 2, and a sealing material 31i such as an O-ring is disposed on the upper end surface.

And the support cylinder part 31j by which the electrode accommodating part 31 was arrange | positioned by the front end surface penetrates the front board part of the vacuum chamber 1, and is extended outside, The front-end | tip is connected with the 1st moving mechanism 33. Yes.
The common ground electrode 32 is formed in a rectangular plate shape having the same size as the high-frequency electrode 22 described above, and a support column part 32a disposed at the front end of the common ground electrode 32 extends outside the vacuum chamber 1 through the support cylinder part 31j. The second moving mechanism 34 is connected.

As shown in FIG. 2, the first moving mechanism 33 and the second moving mechanism 34 include a pneumatic cylinder tube 35, a piston 36 disposed in the cylinder tube 35, and a piston rod connected to the piston 36. 37, and the piston rod 37 is connected to the support cylinder part 31j and the support column part 32a, respectively.
Then, the first moving mechanism 33 causes the electrode housing portion 31 to face the strip-shaped flexible substrate 2 shown in FIG. 2 at a predetermined interval, and the sealing material 31i of the peripheral walls 31d and 31e shown in FIG. Is moved between the film forming positions in contact with the sealing materials 21i of the peripheral walls 21d and 21e of the electrode accommodating portion 21 via the belt-like flexible member 2.

Further, the second moving mechanism 34 causes the common ground electrode 32 to have a release position in which the back surface shown in FIG. 2 is opposed to the belt-like flexible substrate 2 at a predetermined interval, and the back surface shown in FIGS. 3 and 4. The belt-shaped flexible substrate 2 is moved between a substrate contact position that contacts the belt-shaped flexible substrate 2 and positions the belt-shaped flexible substrate 2 at a position that maintains a predetermined distance from the high-frequency electrode 22.
Note that a reaction gas for forming an N-type layer can be supplied to the film formation mechanism 10A, and a reaction gas for forming an I-type layer can be supplied to the film formation mechanism 10B. Can supply a reactive gas for forming a P-type layer. Further, as shown in FIG. 5, the distance La between adjacent high-frequency electrodes 22 is such that the high-frequency electrodes 22 of the high-frequency electrodes 22 in the transport direction of the film-forming mechanisms 10A to 10C are in the transport direction. The length is set to half the length Lb of the flexible substrate 2 in the transport direction. In addition, the strip-shaped flexible substrate 2 is intermittently transported by the sending roll 3 and the take-up roll 5 by a half pitch of the length Lb of the strip-shaped flexible substrate 2 in the transport direction of the high-frequency electrode 22.

Next, the operation of the above embodiment will be described.
First, the belt-like flexible substrate 2 sent out from the sending roll 3 is inserted between the high-frequency electrode 22 and the common ground electrode 32 facing each other in a state where the film forming mechanisms 10A to 10C are in the release positions shown in FIG. Set to take-up roll 5 to be wound up. Then, with the strip-shaped flexible substrate 2 stopped, the film-forming mechanisms 10A to 10C simultaneously operate the second moving mechanism 34 so that the back surface of the common ground electrode 32 is formed on the strip-shaped flexible substrate 2. The belt-shaped flexible substrate 2 is moved forward while being pushed toward the high-frequency electrode 22 side in contact with the back surface opposite to the film surface. And it moves to the contact position from which the distance between the film-forming surface of the strip | belt-shaped flexible substrate 2 shown in FIG. 3 and the high frequency electrode 22 turns into a predetermined distance. At this time, the belt-like flexible substrate 2 is heated to a temperature necessary for film formation by a heater built in the common ground electrode 32.

  Next, the first moving mechanism 33 is operated, and the peripheral walls 21d and 21e of the electrode accommodating portion 21 are interposed via the sealing material 31i formed on the end faces of the peripheral walls 31d and 31e and the belt-shaped flexible substrate 2. The film is moved to the film forming position where the belt-like flexible substrate 2 is sandwiched by the sealing material 21i formed on the end surface of the film. In this state, a film forming chamber is formed by the sealing materials 21i and 31i, the strip-shaped flexible substrate 2 is smoothed along the common ground electrode 32, and a predetermined gap is formed between the strip-shaped flexible substrate 2 and the high-frequency electrode 22. Held in the distance. Then, the reaction gas corresponding to the N-type layer is formed in the film formation mechanism 10A, the reaction gas corresponding to the I-type layer is formed in the film formation mechanism 10B, and the reaction gas corresponding to the I-type layer is formed in the film formation mechanism 10C. A reactive gas corresponding to the P-type layer is separately supplied, and a high-frequency voltage is applied from the high-frequency power source 25 between the high-frequency electrode 22 and the common ground electrode 32, thereby forming an a-Si thin film by plasma CVD. Done.

When the film formation is completed, the first moving mechanism 33 and the second moving mechanism 34 are returned to the original positions, so that the common ground electrode 32 is separated from the belt-shaped flexible substrate 2 and the electrode accommodating portion 31 is formed. Is separated from the strip-shaped flexible electrode 2 and returned to the release position, the strip-shaped flexible substrate 2 returns to a position facing the high-frequency electrode 22 and the common ground electrode 32 in a non-contact state.
At this release position, the feeding roll 3 and the take-up roll 5 lower the belt-like flexible substrate 2 by a half pitch of the length Lb of the belt-like flexible substrate 2 in the transport direction of the high-frequency electrode 22 and stop it again. The film forming process is performed by the film forming mechanisms 10A to 10C.

  In this way, the strip-shaped flexible substrate 2 is intermittently moved by a half pitch of the length Lb of the high-frequency electrode 22 in the transport direction of the strip-shaped flexible substrate 2 and deposition is repeated by the deposition mechanisms 10A to 10C. Thus, as shown in FIG. 5, the P-type layer formed by the film forming mechanism 10A is transported at a half pitch of the high frequency electrode, so that the high frequency electrode 22 of the film forming mechanism 10A is totaled in two steps. Thus, the thickness of the film is twice that of the film formed by one film formation. In addition, since the belt-like flexible substrate 2 is transported at a half pitch of the high-frequency electrode 22, a continuous P-type layer is formed on the belt-like flexible substrate 2. Then, by being transferred to the film forming mechanism 10B, the film forming mechanism 10B also makes a total of two steps, so that the thickness I is twice the film thickness formed by one film formation. A mold layer is deposited. Subsequently, the film is transported to the film forming mechanism 10C and similarly synthesized and divided for two steps, so that a P-type layer having a thickness twice as large as the film formed by one film formation is formed. Thus, a thin film photoelectric conversion element is formed.

At this time, the portion of the band-shaped flexible substrate 2 sandwiched between the peripheral walls 21d, 21e and 31d, 31e of the electrode accommodating portions 21 and 31 is outside the film formation surface, and the film formation surface of the band-shaped flexible substrate 2 is Since the openings 21g and 21h are formed, there is no contact, and there is no fear of contamination due to the contact, and a desired film thickness can be ensured.
In the above embodiment, the case where the strip-shaped flexible substrate 2 is intermittently transported at a pitch half the length Lb of the strip-shaped flexible substrate 2 in the transport direction of the high-frequency electrode 22 has been described. The belt-like flexible substrate 2 is transported at an arbitrary pitch as long as the pitch is equal to or less than the length Lb of the high-frequency electrode 22 in the carrying direction of the belt-like flexible substrate 2. A thin film photoelectric conversion element can be formed by performing continuous film formation in two shapes.

Further, by setting the conveyance pitch of the band-shaped flexible substrate 2 to an equal pitch of the length Lb of the high-frequency electrode 22 in the conveyance direction of the band-shaped flexible substrate 2, the film formation portion of the band-shaped flexible substrate 2 is Since the film is deposited on the high-frequency electrode 22, the staying time is equalized, and a uniform film thickness can be ensured.
Further, the length Lb of the high-frequency electrode 22 of the film forming mechanisms 10A, 10B, and 10C for forming the N-type layer, the I-type layer, and the P-type layer in the transport direction of the belt-like flexible substrate 2 is different from the feed pitch. The film formation time can be changed by setting the integral multiple.

In the above embodiment, the case where the vacuum chamber 1 extends in the vertical direction and the belt-shaped flexible substrate 2 is conveyed in the vertical direction has been described. However, the present invention is not limited to this. May be extended in the horizontal direction to convey the belt-like flexible substrate 2 in the horizontal direction and pass through the film forming mechanisms 10A to 10C.
Further, in the above embodiment, the case where the film is formed on one belt-like flexible substrate 2 has been described. The high-frequency electrodes may be individually fixed and disposed, and the common ground electrode may be movably disposed outside the high-frequency electrodes.

  DESCRIPTION OF SYMBOLS 1 ... Vacuum chamber, 2 ... Strip-like flexible substrate, 3 ... Delivery roll, 4 ... Substrate delivery chamber, 5 ... Winding roll, 6 ... Winding roll, 7, 8 ... Guide roll, 11 ... Fixed clamping member, 12 DESCRIPTION OF SYMBOLS ... Movable clamping member, 21 ... Electrode accommodating part, 21g, 21h ... Opening part, 21i ... Sealing material, 22 ... High frequency electrode, 23 ... Conductive support member, 24 ... Reaction gas introduction pipe, 31 ... Electrode accommodating part, 31f, 31h: opening, 31i: sealing material, 32: common ground electrode, 33: first moving mechanism, 34: second moving mechanism

Claims (9)

A thin-film photoelectric conversion element manufacturing apparatus for forming a photoelectric conversion layer by laminating a plurality of thin films having different properties on a strip-shaped flexible substrate,
A plurality of film-forming mechanisms arranged in series, and a substrate transport unit that sequentially transports the strip-shaped flexible substrate while stopping the film-forming surface to the plurality of film-forming mechanisms,
The film forming mechanism has openings that are not in contact with the film forming surface at the carrying-in and carrying-out portions of the belt-like flexible substrate, and the opening is removed when the belt-like flexible substrate is stopped. A film forming operation for forming a film by forming a vacuum atmosphere by contacting the front and back surfaces around the film surface via a seal material, and separating the seal material from at least the periphery of the film surface to form the strip-shaped flexible film An apparatus for manufacturing a thin film photoelectric conversion element, wherein the apparatus is configured to perform a releasing operation that allows conveyance of a conductive substrate. The film formation mechanism includes a pair of electrode housing portions that can move relative to each other with the film formation surface of the belt-shaped flexible substrate interposed therebetween,
An opening that is in non-contact with the film formation surface formed on the carry-in portion and the carry-out portion of the belt-like flexible substrate of the electrode storage portion facing the film formation surface of the pair of electrode storage portions;
A sealing material in contact with the outer side of the film-forming surface of the strip-shaped flexible substrate formed on the peripheral walls forming the pair of electrode housing portions excluding the opening;
A film forming position where the sealing material contacts the outside of the film forming surface of the belt-shaped flexible substrate to form the pair of electrode housing parts, and an electrode on at least the film forming surface side of the pair of electrode housing parts The thin film photoelectric conversion according to claim 1, further comprising: a relative movement control unit that moves the sealing material around the housing unit relative to a release position separated from the belt-like flexible substrate. Device manufacturing equipment.   The film forming mechanism includes an electrode facing the film forming surface of the strip-shaped flexible substrate and a side opposite to the band-shaped flexible substrate in a state where a pair of electrode housing portions are at the film forming position. 3. The apparatus for manufacturing a thin film photoelectric conversion element according to claim 2, wherein a film is formed by applying a high frequency voltage between the electrode in contact with the belt-like flexible substrate.   The plurality of film forming mechanisms are arranged in series at a predetermined interval, and the substrate transport unit has the belt-like flexible substrate at a pitch equal to or less than a pitch equal to a transport direction length of an electrode for performing film formation of the film forming mechanism. The apparatus for manufacturing a thin film photoelectric conversion element according to claim 1, wherein the thin film photoelectric conversion element is conveyed.   The plurality of film forming mechanisms are arranged in series at a predetermined interval, and the substrate transport unit is configured to form the strip-shaped flexible substrate at a pitch that equally divides a transport direction length of an electrode that performs film formation of the film forming mechanism. The apparatus for manufacturing a thin film photoelectric conversion element according to claim 1, wherein the thin film photoelectric conversion element is conveyed. A method of manufacturing a thin film photoelectric conversion element, wherein a plurality of thin films having different properties are laminated on a belt-like flexible substrate to form at least a photoelectric conversion layer,
A transporting step of transporting and stopping the strip-shaped flexible substrate to a film forming position of a plurality of film forming mechanisms arranged in series;
The belt-like flexible substrate stopped at the film formation position of the film formation mechanism has an opening portion that is not in contact with the film formation surface at the carry-in portion and the carry-out portion of the film formation surface, and excludes the opening portion. A film forming step of forming a vacuum atmosphere by sandwiching the periphery of the film forming surface through a sealing material, and forming a film on the film forming surface;
A photoelectric conversion layer in which thin films having different properties are stacked by releasing the nipping state via the sealing material when the film formation on the film formation surface is completed, and repeating the step of conveying and stopping the film formation surface at a predetermined pitch Forming a thin film photoelectric conversion element.   In the film forming step, the electrode facing the film forming surface of the flexible substrate and the electrode are disposed on the opposite side of the band-shaped flexible substrate in a state of being sandwiched by a sealing material. 7. The method of manufacturing a thin film photoelectric conversion element according to claim 6, wherein a film is formed by applying a high frequency voltage between the electrode and the electrode in contact with the flexible substrate.   The plurality of film forming mechanisms are arranged in series at a predetermined interval, and the belt-shaped flexible substrate is transported at a pitch equal to or less than the length of the electrode of the film forming mechanism in the transport direction. The manufacturing method of the thin film photoelectric conversion element of description.   The plurality of film forming mechanisms are arranged in series at a predetermined interval, and the belt-shaped flexible substrate is transported at a pitch that equally divides the transport direction length of the electrodes of the film forming mechanism. Or a method for producing the thin-film photoelectric conversion element according to 7.

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