JP2010182712A - Method of cleaning manufacturing apparatus of electro-optic device, and the manufacturing apparatus of electro-optic device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of cleaning a manufacturing apparatus of an electro-optic device surely removing deposits adhered to a lift pin and the inside of a through-hole after film-deposition and deposits generated during cleaning after film-deposition. <P>SOLUTION: The method is characterized by including the substrate carrying-out step of carrying a substrate put on a susceptor in a chamber out of the chamber after film-deposition, the lift pin pushing step of pushing at least part of the lift pin which is freely listed up and down in a thickness direction out of a through-hole formed along the thickness direction of the susceptor, and the cleaning step of introducing a fluorine-based gas into the chamber with at least part of the lift pin pushed out of the through-hole and removing foreign materials adhered to the lift pin and the inside of the through-hole after film-deposition by plasma treatment. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a cleaning method for an electro-optical device manufacturing apparatus for forming a film on a substrate and an electro-optical device manufacturing apparatus.

  2. Description of the Related Art As is well known, an electro-optical device, for example, a light transmission type liquid crystal device is configured by interposing a liquid crystal between two substrates made of a glass substrate, a quartz substrate, etc. Switching elements such as thin film transistors (hereinafter referred to as TFTs) and pixel electrodes are arranged in a matrix, the counter electrode is arranged on the other substrate, and the optical response of the liquid crystal layer interposed between the two substrates is imaged. An image can be displayed by changing it according to the signal.

  Further, the TFT substrate on which the TFT is disposed and the counter substrate disposed to face the TFT substrate are manufactured separately. The TFT substrate and the counter substrate are configured, for example, by laminating a semiconductor thin film, an insulating thin film, or a conductive thin film having a predetermined pattern on a quartz substrate. The semiconductor thin film, the insulating thin film, or the conductive thin film is formed by repeating a film forming process and a photolithography process for various films for each layer.

  Here, as a manufacturing apparatus of an electro-optical device that performs processing such as a film forming process on a substrate used in an electro-optical device such as a TFT substrate or a counter substrate, for example, a single wafer type that performs film forming processing on a single substrate. Such a film forming apparatus is well known, and is disclosed, for example, in Patent Document 1.

  In the film forming apparatus disclosed in Patent Document 1, an ESC is provided in a sealable chamber. While heating the substrate to a predetermined temperature on the ESC, a reactive gas is introduced into the chamber to generate plasma. By being generated, the substrate is subjected to a film forming process.

  In addition, several lift pins for supporting the substrate at the upper ends inserted in a loose fit state into the lift pin accommodation holes that are penetrated in the thickness direction of the ESC in the chamber of the film forming apparatus disclosed in Patent Document 1. There is provided a wafer lift device having a main part constituted by a pin folder which can be brought into contact with the lower end of each lift pin and lifts and lowers each lift pin in the lift pin accommodation hole in the thickness direction of the ESC.

  When the substrate is loaded into the chamber by the transfer device, the wafer lift device is configured such that each lift pin is lifted by the pin holder and supports the substrate loaded by the upper end, and then the lift pin is lowered by the pin folder, thereby the ESC. When the substrate is placed on the substrate and the substrate after film formation is carried out of the chamber, each lift pin is lifted by the pin folder again and has a function of supporting the substrate by the upper end. Thereafter, the substrate is carried out of the chamber by the transfer device.

  Here, after the film formation process is performed on the substrate and the substrate is carried out of the chamber, foreign substances such as a film (hereinafter referred to as deposits) that have not adhered to the substrate during the film formation process are formed on the inner wall of the chamber. Is attached). Therefore, in order to make the film forming conditions for a plurality of substrates constant each time, deposits adhered to the inner wall of the chamber after the film forming process for the substrates are made for each film forming process of the substrate or for a certain number of substrates. After the film formation process, it is necessary to remove the film.

  In view of such circumstances, Patent Document 2 discloses that after the film formation process, a fluorine-based cleaning gas is introduced into the chamber to generate plasma, and thus the deposits adhered in the chamber are dry-cleaned. A configuration for removal is disclosed.

  By the way, after the film forming process, the deposit adheres to the inside of the lift pin accommodation hole and the lift pin disclosed in Patent Document 1. However, even if the dry cleaning disclosed in Patent Document 2 is performed, there is a problem that deposits attached to the inside of the lift pin accommodation hole and the lift pin are difficult to remove. Furthermore, there is a problem in that deposits generated during cleaning adhere to the inside of the lift pin accommodation hole and the lift pins after cleaning.

  If deposits remain attached to the inside of the lift pin receiving hole and the outer periphery of the lift pins, when the lift pins are moved up and down by the pin holder, the deposits may cause malfunction of the lift pins. Since a film formation failure may occur during the film formation process, a cleaning method and a film formation apparatus that can reliably remove deposits attached to the inside of the lift pin accommodating hole and the lift pin have been desired.

  The present invention has been made paying attention to the above-described circumstances, and after the film formation process, the deposits that have adhered to the lift pins and the through-holes after the film formation process and the deposits generated during the cleaning are reliably removed. An object of the present invention is to provide a method for cleaning an electro-optical device manufacturing apparatus and an electro-optical device manufacturing apparatus.

  In order to achieve the above object, a cleaning method for an electro-optical device manufacturing apparatus according to the present invention is a cleaning method for an electro-optical device manufacturing apparatus for forming a film on a substrate, and is placed on a susceptor in a chamber. A substrate unloading step of unloading the substrate to the outside of the chamber after the film formation process, and a lift pin that can be raised and lowered in the thickness direction from a through hole along the thickness direction of the susceptor provided in the chamber. A lift pin projecting step for projecting at least a part, and in a state where at least a part of the lift pin projects from the through-hole, a fluorine-based gas is introduced into the chamber, and plasma treatment is performed in the lift pin and the through-hole. And a cleaning step for removing foreign matter adhering after the film forming process.

  According to the present invention, in the cleaning process, the lift pin can be exposed to the fluorine-based gas by performing the plasma treatment using the fluorine-based gas with the lift pin protruding from the through-hole, and the lift pin can be exposed to the inside of the through-hole. Since the fluorine-based gas can be introduced, the cleaning of the electro-optical device manufacturing apparatus that can reliably remove the foreign matter after the film forming process adhered to the lift pins and the through-holes or the foreign matter generated during cleaning can be removed. It has the effect that a method can be provided.

  The cleaning step may be performed by moving the lift pin or the susceptor up and down in the thickness direction during the plasma processing.

  According to the present invention, in the cleaning process, in the state where the lift pin is lowered into the through hole, the substrate mounting surface of the susceptor and the vicinity of the opening of the inner peripheral surface of the through hole can be exposed to the fluorine-based gas, Further, in the state where the lift pin protrudes from the through hole, the lift pin can be exposed to the fluorine-based gas and the fluorine-based gas can be introduced into the through-hole, so that the lift pin is securely attached to the lift pin and the through-hole. There is an effect that it is possible to provide a cleaning method for an electro-optical device manufacturing apparatus that can remove foreign matters after film formation processing or foreign matters generated during cleaning.

  Further, in the cleaning process, the lift pin is lowered stepwise from the state in which at least a part of the lift pin protrudes from the through hole during the plasma treatment, or the lift pin located in the through hole is removed. The at least one portion is raised stepwise so that at least a portion protrudes from the through hole.

  According to the present invention, in the cleaning process, the lift pin is moved up and down stepwise, so that the foreign matter attached to the lift pin can be removed stepwise.

  The cleaning step may be performed by lowering the lift pin into the through hole from a state in which at least a part of the lift pin protrudes from the through hole for a certain time during the plasma treatment.

  According to the present invention, since the cleaning process is performed in a state where the lift pin protrudes from the through hole for a certain period of time, the foreign matter attached to the lift pin can be surely removed when the lift pin protrudes for a certain period of time. Have

  An electro-optical device manufacturing apparatus according to the present invention performs the cleaning method for an electro-optical device manufacturing apparatus according to any one of claims 1 to 4.

  According to the present invention, there is provided an apparatus for manufacturing an electro-optical device including a cleaning method capable of removing foreign matters after film formation processing, foreign matters generated during cleaning, and the like that reliably adhere to lift pins and through holes. can do.

FIG. 3 is a plan view of a liquid crystal device manufactured by the electro-optical device manufacturing apparatus of the present embodiment. Sectional drawing of the liquid crystal device cut | disconnected along the II-II line | wire in FIG. FIG. 4 is a partial cross-sectional view schematically showing the electro-optical device manufacturing apparatus according to the present embodiment in a state where a substrate to be processed is supported on the upper end of a lift pin. FIG. 4 is a partial cross-sectional view schematically illustrating a state in which a lift pin of FIG. 3 is lowered and a substrate is placed on a susceptor and a film forming process is performed. The top view which shows the process board | substrate mounted on the susceptor of FIG. 5 is a flowchart schematically showing a cleaning method of the present embodiment. The fragmentary sectional view which shows roughly the state which plasma-processes in the state which made at least one part of the lift pin protruded from the through-hole of the susceptor. The partial expanded sectional view of the position enclosed with the VIII line in FIG. The partial expanded sectional view which shows schematically the state which performs a cleaning process in the state which lowered | hung the lift pin in the through-hole.

  Embodiments of the present invention will be described below with reference to the drawings. In the following embodiments, the electro-optical device will be described by taking a liquid crystal device as an example. In addition, one of the pair of substrates used in the liquid crystal device will be described by using an element substrate (hereinafter referred to as a TFT substrate) as an example, and the other substrate as an example of a counter substrate facing the TFT substrate.

  First, the overall configuration of the liquid crystal device manufactured by the electro-optical device manufacturing apparatus of the present embodiment will be described. FIG. 1 is a plan view of a liquid crystal device manufactured by the electro-optical device manufacturing apparatus of the present embodiment, and FIG. 2 is a cross-sectional view of the liquid crystal device cut along line II-II in FIG.

  As shown in FIGS. 1 and 2, the liquid crystal device 100 includes, for example, a TFT substrate 10 using a quartz substrate or a glass substrate, and a counter substrate, for example, using a glass substrate or a quartz substrate. A liquid crystal 50 is interposed in the internal space between the substrate 20 and the substrate 20. The TFT substrate 10 and the counter substrate 20 that are arranged to face each other are bonded together by a sealing material 52.

  A display region 10 h of the TFT substrate 10 that constitutes the display region 40 of the liquid crystal device 100 is formed on the surface of the TFT substrate 10 that is in contact with the liquid crystal 50. Further, pixel electrodes (ITO) 9a constituting pixels are arranged in a matrix in the display area 10h.

  Further, a counter electrode (ITO) 21 is provided on the entire surface of the counter substrate 20, and the display region of the liquid crystal device 100 is disposed on the surface side of the counter electrode 21 in contact with the liquid crystal 50 at a position facing the display region 10 h. A display area 20 h of the counter substrate 20 constituting 40 is configured.

  An alignment film 16 that has been subjected to a rubbing process is provided on the pixel electrode 9 a of the TFT substrate 10, and the rubbing process is also performed on the counter electrode 21 formed over the entire surface of the counter substrate 20. An alignment film 26 is provided. Each alignment film 16, 26 is made of a transparent organic film such as a polyimide film.

  Further, in the pixel region of the TFT substrate 10, a plurality of scanning lines (not shown) and a plurality of data lines (not shown) are wired so as to intersect with each other, and the pixel electrode 9a is formed in a region partitioned by the scanning lines and the data lines. Are arranged in a matrix. A TFT 30 as a transistor is provided corresponding to each intersection of the scanning line and the data line, and the pixel electrode 9 a is electrically connected to each TFT 30.

  The TFT 30 is turned on by the ON signal of the scanning line, whereby the image signal supplied to the data line is supplied to the pixel electrode 9a. A voltage between the pixel electrode 9 a and the counter electrode 21 provided on the counter substrate 20 is applied to the liquid crystal 50.

  The counter substrate 20 is provided with a light shielding film 53 as a frame for defining the display area by defining and partitioning the outer periphery of the display area 10 h of the TFT substrate 10 and the display area 20 h of the counter substrate 20 in the pixel area. .

  When the liquid crystal 50 is injected into the space between the TFT substrate 10 and the counter substrate 20 by a known liquid crystal injection method, the sealing material 52 is missing and applied at a part of one side of the sealing material 52. .

  The missing portion of the sealing material 52 constitutes a liquid crystal injection port 108 for injecting the liquid crystal 50 between the TFT substrate 10 and the counter substrate 20 bonded from the missing portion. The liquid crystal injection port 108 is sealed with a sealing material 109 after the liquid crystal is injected.

  A data line driving circuit 101 that is a driver for driving the data line by supplying an image signal to the data line of the TFT substrate 10 at a predetermined timing in an area outside the sealing material 52 and an external circuit for connection to an external circuit. A connection terminal 102 is provided along one side of the TFT substrate 10.

  A scanning line driving circuit 103 which is a driver for driving the gate electrode by supplying a scanning signal to the scanning line of the TFT substrate 10 and a gate electrode (not shown) at a predetermined timing along two sides adjacent to the one side. 104 is provided. The scanning line driving circuits 103 and 104 are formed on the TFT substrate 10 at a position facing the light shielding film 53 inside the sealing material 52.

  Further, on the TFT substrate 10, wiring 105 connecting the data line driving circuit 101, the scanning line driving circuits 103 and 104, the external connection terminal 102, and the vertical conduction terminal 107 is provided to face the three sides of the light shielding film 53. ing.

  The vertical conduction terminals 107 are formed on the four TFT substrates 10 at the corners of the sealing material 52. Between the TFT substrate 10 and the counter substrate 20, a vertical conductive material 106 having a lower end in contact with the vertical conductive terminal 107 and an upper end in contact with the counter electrode 21 is provided. And the counter substrate 20 are electrically connected.

  In addition to the TFT 30 and the pixel electrode 9a, various configurations including these are provided in a laminated structure on the TFT substrate 10. In addition, since this laminated structure and the function of each laminated | stacked layer are known, the description is abbreviate | omitted.

  Next, the electro-optical device manufacturing apparatus configured as described above will be described with reference to FIGS. FIG. 3 is a partial cross-sectional view schematically showing the electro-optical device manufacturing apparatus according to the present embodiment in a state where a substrate to be processed is supported on the upper end of the lift pins. FIG. 4 is a diagram showing the lift pins of FIG. FIG. 5 is a partial cross-sectional view schematically showing a state where the substrate is placed on the susceptor and a film forming process is performed, and FIG. 5 is a plan view showing the processing substrate placed on the susceptor of FIG.

  Hereinafter, as an electro-optical device manufacturing apparatus, a plasma CVD apparatus that performs a film forming process on a substrate will be described as an example.

  As shown in FIG. 3, the plasma CVD apparatus 1 includes a chamber 60 into which a substrate 10 ′ to be processed is loaded. A loading / unloading port for the substrate 10 ′ (not shown) is provided in the wall portion of the chamber 60, and a gas introduction port 68 for introducing the film forming gas G 1 into the interior 60 i of the chamber 60 is provided in the wall portion of the chamber 60, A discharge port (not shown) for discharging the deposition gas G1 introduced into the interior 60i of the chamber 60 is provided. Further, an electrode for plasma excitation (hereinafter referred to as an upper electrode) 67 is provided on the top surface of the inner wall of the wall portion of the chamber 60.

  Further, as shown in FIG. 5, the substrate 10 ′ may be composed of a large substrate made of quartz, glass or the like, in which a plurality of the above-described TFT substrates 10 or counter substrates 20 are formed. The TFT substrate 10 or the counter substrate 20 may be composed of a substrate composed of quartz, glass or the like.

  A susceptor 61 on which the substrate 10 ′ to be processed is placed on the upper surface 61 s as shown in FIG. 4 is provided in the interior 60 i of the chamber 60. For example, three through holes 63 (only two are shown in FIGS. 3 and 4) are formed in the susceptor 61 along the thickness direction A of the susceptor 61. The number of through holes 63 is not limited to three.

  Further, inside the susceptor 61, a heating element 69 such as a heater for heating the substrate 10 'placed on the upper surface 61s to the film forming temperature is provided. Furthermore, a plasma excitation electrode (hereinafter referred to as a lower electrode) 66 is provided on the upper surface 61 s of the susceptor substantially in parallel with the upper electrode 67 described above.

  In addition, lift pins 62 that are vertically movable in the thickness direction A and that are longer than the susceptor 61 are inserted in the through holes 63 of the susceptor 61. The three lift pins 62 support the placed substrate 10 ′ at three points at the upper end 62 t in the thickness direction A.

  Further, the lift pin 62 is moved up and down in the thickness direction A with respect to the inside of the through hole 63 in a state in which the inside of the chamber 60 is in contact with the lower end 62 i of the lift pin 62 in the thickness direction A, thereby the upper end 62 t of the lift pin 62. A lift bar 65 is provided for moving the substrate 10 ′ supported in the vertical direction in the thickness direction A.

  Although not shown, the lift bar 65 is supported by a lifting device (not shown) provided in the interior 60 i of the chamber 60. Further, the lift bar 65 abuts the lower ends 62 i of the three lift pins 62 to raise and lower the three lift pins 62 simultaneously.

  The lift pins 62 are capable of moving up and down in the thickness direction A by the lift bar 65 so that the substrate 10 ′ supported by the upper end 62 t is moved up and down in the thickness direction A.

  As shown in FIG. 3, in the lifted position where the lift pin 62 protrudes at least partly in the thickness direction A from the through hole 63, the lift pin 62 has the upper end 62 t and the substrate 10 carried into the interior 60 i of the chamber 60. 'Is placed. Further, as shown in FIG. 4, the lift pin 62 places the substrate 10 ′ on the upper surface 61 s of the susceptor 61 at the lowered position where the upper end 62 t is fitted into the through hole.

  When a film is formed on the substrate 10 ′ using the CVD apparatus configured in this way, as shown in FIG. 4, in a state where the substrate 10 ′ is placed on the upper surface 61s of the susceptor 61, the heating element 69 While heating the substrate 10 ′ to the film forming temperature, the film forming gas G 1 is introduced into the interior 60 i of the chamber 60 from the gas inlet 68 to excite the plasma P between the upper electrode 67 and the lower electrode 66. Thus, a film forming process is performed by a so-called known plasma process.

  After the film forming process, as shown in FIG. 3, the lift pins 62 supporting the substrate 10 ′ are lifted to the raised position using the lift bar 65, and then the substrate 10 ′ after the film forming process is carried in (not shown). It is carried out of the chamber 60 from the carry-out port.

  Here, after the film formation process, the above-mentioned deposits adhere to the inner wall of the chamber 60, the upper surface 61s of the susceptor 61, the upper end 62t and outer peripheral surface 62g of the lift pin 62, the inner peripheral surface 63n of the through hole 63, and the like. Yes. Hereinafter, a cleaning method for removing deposits in the chamber after film formation will be described with reference to FIGS.

  FIG. 6 is a flowchart schematically showing the cleaning method of the present embodiment, and FIG. 7 is a part schematically showing a state in which plasma treatment is performed with at least a part of the lift pin protruding from the through hole of the susceptor. 8 is a partially enlarged cross-sectional view of a position surrounded by a line VIII in FIG.

  As shown in FIG. 6, first, in step S <b> 1, as described above, a substrate unloading process for unloading the substrate 10 ′ after the film formation process out of the chamber 60 is performed.

  Next, in step S2, as shown in FIG. 7, a lift pin projecting step is performed for projecting at least a part of the lift pin 62 from the through hole 63 of the susceptor 61 upward in the thickness direction A.

  Finally, in step S3, with the at least part of the lift pin 62 protruding from the through hole 63, a cleaning gas G2 such as a fluorine-based gas is introduced into the interior 60i of the chamber 60 from the gas introduction port 68, and the upper electrode A cleaning process is performed in which cleaning is performed by plasma processing by exciting the plasma P ′ between 67 and the lower electrode 66.

As a result, the cleaning gas G2 hits the inner wall of the chamber 60 to remove deposits attached to the inner wall, and as shown in FIG. 8, the cleaning gas G2 is applied to the upper surface 61s of the susceptor 61 and the upper end of the lift pin 62. By hitting 62t and the outer peripheral surface 62g, deposits adhering to the upper surface 61s of the susceptor 61, the upper end 62t of the lift pin 62 and the outer peripheral surface 62g are removed. Further, the cleaning gas G2 is introduced into the through hole 63 from the gap between the inner peripheral surface 63n of the through hole 63 and the outer peripheral surface 62g of the lift pin 62, thereby removing deposits attached to the inner peripheral surface 63n. Is done.

The cleaning methods shown in steps S1 to S3 described above may be performed each time the substrate 10 ′ is subjected to film formation and the substrate is unloaded, or for several substrates 10 ′. It may be performed after the film forming process is performed.

  Thus, in this embodiment, when cleaning the inside of the chamber 60, the cleaning gas G2 is introduced into the chamber 60 with at least a part of the lift pin 62 protruding from the through hole 63 of the susceptor 61. It has been shown that deposits attached not only to the inner wall of the chamber 60 but also to the upper surface 61s of the susceptor 61, the lift pin 62, and the inner peripheral surface 63n of the through hole 63 are removed by the plasma treatment using the excited plasma P ′.

  According to this, since the lift pin 62 can be exposed to the cleaning gas G2, and the cleaning gas G2 can be introduced into the through hole 63, the deposits reliably adhered to the lift pin 62 and the through hole 63. It is possible to provide a cleaning method for an electro-optical device manufacturing apparatus that can remove the above-described problem.

  A modification will be described below with reference to FIGS. 8 and 9 described above. FIG. 9 is a partially enlarged cross-sectional view schematically showing a state in which the cleaning process is performed in a state where the lift pin is lowered into the through hole.

  In the present embodiment, it has been shown that the cleaning process is performed with at least a part of the lift pin 62 protruding from the through hole 63.

  Not limited to this, as shown in FIG. 8, at least a part of the lift pin 62 protrudes from the through hole 63, and as shown in FIG. 9, the lift pin 62 in the through hole 63 is lowered. The cleaning process may be performed while raising and lowering the lift pins 62.

  According to this, in addition to the effects of the present embodiment described above, the upper surface 61 s of the susceptor 61 and the inner periphery of the through-hole 63 in the state where the lift pin 62 is lowered into the through-hole 63 as shown in FIG. Since the vicinity of the opening 63n1 on the surface 63n can be exposed to the cleaning gas G2, an electro-optical device that can more reliably remove deposits after the film forming process attached to the lift pins 62 and the through holes 63 is obtained. An apparatus cleaning method can be provided.

  In addition to the above, whether the lift pin 62 is lowered stepwise from the position shown in FIG. 8 to the position shown in FIG. 9 or whether the lift pin 62 is raised stepwise from the position shown in FIG. 9 to the position shown in FIG. Therefore, the cleaning process may be performed.

  According to this, the deposit adhering to the lift pin 62 can be removed stepwise.

  Furthermore, the lift pin 62 is moved up and down by repeatedly lowering the lift pin 62 to the position shown in FIG. 9 from the state where the lift pin 62 protrudes for a certain period of time at the position shown in FIG. I do not care.

  According to this, since the deposit adhered to the lift pin 62 can be surely removed when protruding for a certain time, the deposit can be removed more reliably than when the lift pin is simply raised and lowered. Can do.

  Further, the liquid crystal device is not limited to the above-described illustrated examples, and it is needless to say that various changes can be made without departing from the gist of the present invention. For example, the liquid crystal device described above has been described by taking an active matrix type liquid crystal device using an active element (active element) such as a TFT (thin film transistor) as an example. However, the present invention is not limited to this, and a TFD (thin film diode) or the like. An active matrix type liquid crystal device using the active element (active element) may be used.

  Further, in the present embodiment, the electro-optical device has been described by taking a liquid crystal device as an example, but the present invention is not limited to this, and an electroluminescence device, in particular, an organic electroluminescence device, an inorganic electroluminescence device, or the like. A device using a plasma display device, a field emission display (FED) device, a surface-conduction electron-emitter display (SED) device, an LED (light emitting diode) display device, an electrophoretic display device, a thin cathode ray tube, or a liquid crystal shutter It can be applied to various electro-optical devices such as.

  The electro-optical device may be a display device that forms elements on a semiconductor substrate, for example, LCOS (Liquid Crystal On Silicon). In LCOS, a single crystal silicon substrate is used as an element substrate, and a transistor is formed on a single crystal silicon substrate as a switching element used for a pixel or a peripheral circuit. In addition, a reflective pixel electrode is used for the pixel, and each element of the pixel is formed below the pixel electrode.

  In addition, the electro-optical device has a display device in which a pair of electrodes are formed on the same layer of a substrate on one side, for example, IPS (In-Plane Switching), or a pair of electrodes on one substrate via an insulating film. It may be a display device FFS (Fringe Field Switching) formed.

  Further, the electro-optical device manufacturing apparatus is not limited to a plasma CVD apparatus, and may be applied to a cleaning method for another film forming apparatus.

  DESCRIPTION OF SYMBOLS 1 ... Plasma CVD apparatus (manufacturing apparatus of an electro-optical device) 10 '... Board | substrate, 60 ... Chamber, 61 ... Susceptor, 62 ... Lift pin, 63 ... Through-hole, A ... Thickness direction, G2 ... Cleaning gas (fluorine-type gas) ), P '... Plasma.

JP 2007-81170 A Japanese Patent Laid-Open No. 9-64013

Claims (5)

A method for cleaning an electro-optical device manufacturing apparatus for forming a film on a substrate,
A substrate unloading step of unloading the substrate placed on a susceptor in the chamber after film formation;
A lift pin projecting step for projecting at least a part of a lift pin that can be raised and lowered in the thickness direction from a through-hole along the thickness direction of the susceptor provided in the chamber;
With at least a part of the lift pin protruding from the through hole, a fluorine-based gas is introduced into the chamber, and foreign matters attached to the lift pin and the through hole after the film forming process are removed by plasma processing. A cleaning process,
A method for cleaning an electro-optical device manufacturing apparatus, comprising:   2. The cleaning method of an electro-optical device manufacturing apparatus according to claim 1, wherein the cleaning step is performed by moving the lift pin or the susceptor up and down in the thickness direction during the plasma processing.   In the plasma process, in the plasma processing, the lift pin is lowered stepwise from a state in which at least a part of the lift pin protrudes from the through hole, or the lift pin located in the through hole is The method of cleaning an electro-optical device manufacturing apparatus according to claim 1, wherein the cleaning is performed in a stepwise manner so that at least a portion protrudes from the through hole.   2. The cleaning step is performed by lowering the lift pin into the through hole from a state in which at least a part of the lift pin protrudes from the through hole for a certain time during the plasma processing. Or a method of cleaning an electro-optical device manufacturing apparatus according to 2.   An electro-optical device manufacturing apparatus that performs the cleaning method for an electro-optical device manufacturing apparatus according to claim 1.

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