JP2010167377A - Gas treatment system - Google Patents
Gas treatment system Download PDFInfo
- Publication number
- JP2010167377A JP2010167377A JP2009013001A JP2009013001A JP2010167377A JP 2010167377 A JP2010167377 A JP 2010167377A JP 2009013001 A JP2009013001 A JP 2009013001A JP 2009013001 A JP2009013001 A JP 2009013001A JP 2010167377 A JP2010167377 A JP 2010167377A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- reaction chamber
- long hole
- solid adsorbent
- port
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
本発明は、ガス処理システムに関する。 The present invention relates to a gas processing system.
従来より、工場等から排出される排ガス中のハロゲン成分及び／又は硫黄成分を乾式処理により除去するガス処理システムが提案されている。例えば、特許文献１では、反応室内に充填された炭酸カルシウム粒子に、燃焼炉から排出される高温の排ガスを接触させて酸化カルシウムを生成し、この酸化カルシウムと排ガス中に含まれるハロゲン成分及び／又は硫黄成分とを反応させてこれらの成分を吸着、除去するガス処理システムが開示されている。また、本発明者は、特許文献２，３，４に示すように、反応室内に充填されたカルシウム成分を主体とする固体吸着剤を上から下へ流動させると共に、この固体吸着剤の流動方向と交差する方向又は逆方向に排ガスを流通させることにより、固体吸着剤と排ガスとの接触効率を向上させて排ガス中に含まれるハロゲン成分及び／又は硫黄成分を効率よく除去するガス処理システムを提案している。こうすることにより、ハロゲン成分及び／又は硫黄成分を中和した後の固体吸着剤が下部から排出されると共に新たな固体吸着剤が上部から供給されるため、反応室における、これらの成分を除去する機能が長期間維持される。 Conventionally, a gas treatment system has been proposed that removes halogen components and / or sulfur components in exhaust gas discharged from factories and the like by dry treatment. For example, in Patent Document 1, calcium oxide is produced by bringing calcium carbonate particles filled in a reaction chamber into contact with high-temperature exhaust gas discharged from a combustion furnace, and this calcium oxide and halogen components contained in the exhaust gas and / or Alternatively, a gas processing system is disclosed in which a sulfur component is reacted to adsorb and remove these components. In addition, as shown in Patent Documents 2, 3 and 4, the inventor causes a solid adsorbent mainly composed of calcium components filled in a reaction chamber to flow from top to bottom and the flow direction of the solid adsorbent. A gas treatment system that improves the contact efficiency between the solid adsorbent and the exhaust gas and efficiently removes the halogen and / or sulfur components contained in the exhaust gas by circulating the exhaust gas in the direction that intersects or in the opposite direction is doing. By doing so, the solid adsorbent after neutralizing the halogen component and / or sulfur component is discharged from the lower part and a new solid adsorbent is supplied from the upper part, so that these components in the reaction chamber are removed. Function is maintained for a long time.
しかしながら、これらのガス処理システムでは、反応室のガス導入口付近で固体吸着剤が融着してしまうことがあった。このような固体吸着剤の融着が発生するのは、反応室のガス導入口付近では、未処理の排ガスつまりハロゲン成分及び／又は硫黄成分の濃度が高い排ガスと固体吸着剤との中和反応が活発に起こり、それに伴って発熱量が増大し局所的な高温化を招くことによると考えられる。こうした固体吸着剤の融着が発生すると、排ガスが反応室を通過する際の圧力損失が大きくなるため好ましくない。また、特許文献２，３のように固体吸着剤を反応室内で流動させる場合には、固体吸着剤の流動性が悪化してしまい、反応室における、ハロゲン成分及び／又は硫黄成分を除去する機能を長期間維持することが困難になる。 However, in these gas processing systems, the solid adsorbent may be fused near the gas inlet of the reaction chamber. Such solid adsorbent fusion occurs near the gas inlet of the reaction chamber because of the neutralization reaction between untreated exhaust gas, that is, exhaust gas having a high concentration of halogen component and / or sulfur component, and solid adsorbent. It is thought that this occurs due to the fact that the heat generation increases and the heat generation amount increases accordingly, causing a local high temperature. Such fusion of the solid adsorbent is not preferable because the pressure loss when the exhaust gas passes through the reaction chamber increases. In addition, when the solid adsorbent is caused to flow in the reaction chamber as in Patent Documents 2 and 3, the fluidity of the solid adsorbent is deteriorated, and the function of removing the halogen component and / or sulfur component in the reaction chamber. It becomes difficult to maintain for a long time.
本発明は、上述した課題に鑑みなされたものであり、固体吸着剤の融着を防止可能なガス処理システムを提供することを主目的とする。 This invention is made | formed in view of the subject mentioned above, and it aims at providing the gas processing system which can prevent fusion | melting of a solid adsorbent.
本発明は、上述の主目的を達成するために以下の手段を採った。 The present invention adopts the following means in order to achieve the main object described above.
すなわち、本発明のガス処理システムは、
ハロゲン化合物及び／又は硫黄化合物を含むガスにおいて、ハロゲン成分及び／又は硫黄成分を化学反応により吸着可能な固体吸着剤が充填された反応室を有し、該反応室に第１及び第２ガス通過口が設けられた化学吸着装置と、
前記第１ガス通過口に未処理ガスを供給し前記反応室を通過した処理済みガスを前記第２ガス通過口から排出する順方向状態か、前記第２ガス通過口に未処理ガスを供給し前記反応室を通過した処理済みガスを前記第１ガス通過口から排出する逆方向状態かを切り替える切替器と、
を備えたものである。
That is, the gas treatment system of the present invention is
A gas containing a halogen compound and / or a sulfur compound has a reaction chamber filled with a solid adsorbent capable of adsorbing the halogen component and / or sulfur component by a chemical reaction, and the first and second gases pass through the reaction chamber. A chemical adsorption device provided with a mouth;
Supplying untreated gas to the first gas passing port and discharging the treated gas passing through the reaction chamber from the second gas passing port, or supplying untreated gas to the second gas passing port A switch that switches between the reverse state in which the treated gas that has passed through the reaction chamber is discharged from the first gas passage port;
It is equipped with.
このガス処理システムでは、順方向状態で運転を継続することにより反応室内の第１ガス通過口付近の固体吸着剤がハロゲン成分及び／又は硫黄成分の濃度の高い未処理ガスと中和反応を起こして未処理ガス接触面近傍の固体吸着剤が発熱したとしても、その固体吸着剤が融着する前に切替器により逆方向状態に切り替えることが可能である。そして、逆方向状態に切り替えた後、反応室内の第１ガス通過口付近の固体吸着剤は、反応室内で中和されたあとのガス（ハロゲン成分及び／又は硫黄成分を少量含むガス）と接触するため、発熱量が減り、温度上昇が緩和されるか温度が下降する。また、逆方向状態で運転を継続することにより反応室内の第２ガス通過口付近の固体吸着剤がハロゲン成分及び／又は硫黄成分の濃度の高い未処理ガスと中和反応を起こして未処理ガス接触面近傍の固体吸着剤が発熱したとしても、その固体吸着剤が融着する前に切替器により順方向状態に切り替えることが可能である。そして、順方向状態に切り替えた後、反応室内の第２ガス通過口付近の固体吸着剤は、反応室内で中和されたあとのガス（ハロゲン成分及び／又は硫黄成分を少量含むガス）と接触するため、発熱量が減り、温度上昇が緩和されるか温度が下降する。このように順方向状態と逆方向状態とを適宜切り替えることが可能であるため、反応室内の固体吸着剤が溶着するのを防止できる。 In this gas treatment system, the solid adsorbent in the vicinity of the first gas passage in the reaction chamber causes a neutralization reaction with an untreated gas having a high concentration of halogen component and / or sulfur component by continuing operation in the forward direction state. Even if the solid adsorbent near the untreated gas contact surface generates heat, it can be switched to the reverse state by the switch before the solid adsorbent is fused. Then, after switching to the reverse state, the solid adsorbent near the first gas passage in the reaction chamber comes into contact with the gas after neutralization in the reaction chamber (a gas containing a small amount of halogen component and / or sulfur component). Therefore, the amount of generated heat is reduced, and the temperature rise is moderated or the temperature is lowered. Further, by continuing the operation in the reverse direction, the solid adsorbent in the vicinity of the second gas passage in the reaction chamber causes a neutralization reaction with the untreated gas having a high concentration of the halogen component and / or the sulfur component, and the untreated gas. Even if the solid adsorbent near the contact surface generates heat, it can be switched to the forward state by the switch before the solid adsorbent is fused. After switching to the forward state, the solid adsorbent near the second gas passage in the reaction chamber comes into contact with the gas after neutralization in the reaction chamber (a gas containing a small amount of a halogen component and / or a sulfur component). Therefore, the amount of generated heat is reduced, and the temperature rise is moderated or the temperature is lowered. As described above, the forward state and the reverse direction can be switched as appropriate, so that the solid adsorbent in the reaction chamber can be prevented from being welded.
ここで、固体吸着剤としては、ハロゲン成分及び／又は硫黄成分（ハロゲン化水素や亜硫酸ガス、硫酸ガス、ハロゲンガスなど）を中和反応により吸着可能な材料であれば特に限定されないが、例えば、酸化カルシウム、酸化マグネシウム、酸化ナトリウム、酸化カリウム、炭酸カルシウム、炭酸マグネシウム、炭酸ナトリウム、炭酸カリウムなどが挙げられる。上記固体吸着剤には、吸着反応が生じないもしくは生じても極微量である、特開２００４−１６７４０３に記載の非反応成分（酸化アルミニウム、酸化ケイ素、酸化クロムなど）が混合されていても良い。これらの非（吸着）反応成分を加えることにより、固体吸着剤間の融着を抑制でき、例えばφ３〜φ２０ｍｍの範囲で造粒成形した吸着剤の内部まで吸着反応が進展するため、吸着効率の向上に寄与する。また、非（吸着）反応成分も含めた固体吸着剤全体で、ガスの分解および吸着時に生じる反応熱の蓄熱化ができ、反応温度保持のための省エネルギー化につながる。 Here, the solid adsorbent is not particularly limited as long as it is a material that can adsorb a halogen component and / or a sulfur component (hydrogen halide, sulfurous acid gas, sulfuric acid gas, halogen gas, etc.) by a neutralization reaction. Examples include calcium oxide, magnesium oxide, sodium oxide, potassium oxide, calcium carbonate, magnesium carbonate, sodium carbonate, and potassium carbonate. The solid adsorbent may be mixed with non-reactive components (aluminum oxide, silicon oxide, chromium oxide, etc.) described in JP-A No. 2004-167403, which cause no or no adsorption reaction. . By adding these non-adsorption reaction components, fusion between solid adsorbents can be suppressed. For example, the adsorption reaction progresses to the inside of the adsorbent granulated and formed in the range of φ3 to φ20 mm. Contributes to improvement. In addition, the entire solid adsorbent including non-adsorbed reaction components can store heat of reaction heat generated during gas decomposition and adsorption, leading to energy saving for maintaining the reaction temperature.
本発明のガス処理システムにおいて、前記化学吸着装置は、前記反応室へ固体吸着剤を供給可能な供給部と、前記反応室から固体吸着剤を排出可能な排出部と、を備え、前記供給部から前記反応室へ供給された固体吸着剤は前記反応室の前記両ガス通過口を結ぶ仮想線と交差する方向に移動して前記排出部から排出されるように構成されていてもよい。こうすれば、ハロゲン成分及び／又は硫黄成分を中和した後の固体吸着剤が排出部から排出されると共に新たな固体吸着剤が供給部から供給されるため、反応室における、ハロゲン成分及び／又は硫黄成分を除去する機能を長期間維持することができる。また、上述したように固体吸着剤が溶着するのを防止できるため、固体吸着剤の流動性が悪化することがない。 In the gas treatment system of the present invention, the chemical adsorption device includes a supply unit capable of supplying a solid adsorbent to the reaction chamber, and a discharge unit capable of discharging the solid adsorbent from the reaction chamber, and the supply unit The solid adsorbent supplied to the reaction chamber may move in a direction intersecting with an imaginary line connecting the two gas passage ports of the reaction chamber and discharged from the discharge section. In this way, since the solid adsorbent after neutralizing the halogen component and / or sulfur component is discharged from the discharge section and new solid adsorbent is supplied from the supply section, the halogen component and / or Alternatively, the function of removing the sulfur component can be maintained for a long time. Moreover, since it can prevent that a solid adsorbent welds as mentioned above, the fluidity | liquidity of a solid adsorbent does not deteriorate.
本発明のガス処理システムにおいて、前記化学吸着装置では、未処理ガス中の有機ハロゲン化合物を分解してハロゲン化水素及び／又はハロゲンガスを発生させる触媒が固体吸着剤と混合して使用されるようにしてもよい。こうすれば、化学吸着装置中で有機ハロゲン化合物（例えばトリクロロエチレンなど）が触媒によってハロゲン化水素やハロゲンガスなどに分解すると同時に又は分解後に、ｉｎ ｓｉｔｕ（同じ反応場内）において固体吸着剤に吸着されるため、未処理ガスを効率よく浄化することができる。ここで、触媒としては、例えば酸化鉄、活性アルミナ、酸化マンガンなどが挙げられる。 In the gas treatment system of the present invention, the chemical adsorption apparatus uses a catalyst that decomposes an organic halogen compound in an untreated gas to generate hydrogen halide and / or a halogen gas mixed with a solid adsorbent. It may be. By doing so, an organic halogen compound (such as trichlorethylene) is decomposed into hydrogen halide or halogen gas by the catalyst in the chemical adsorption apparatus, and is adsorbed on the solid adsorbent in situ (in the same reaction field) at the same time or after decomposition. Therefore, the untreated gas can be purified efficiently. Here, examples of the catalyst include iron oxide, activated alumina, and manganese oxide.
本発明のガス処理システムにおいて、前記化学吸着装置は、前記反応室内を加熱できる熱源を有していてもよい。こうすれば、化学吸着装置を暖機して固体吸着剤と未処理ガス中のハロゲン成分及び／又は硫黄成分との中和反応を効率よく実施することができる。熱源は特に限定されないが、抵抗加熱ヒーターやマイクロ波、ガスバーナーなどが挙げられる。ここで、暖機温度は、ハロゲン成分及び／又は硫黄成分と固体吸着剤の組み合わせに応じて適宜適切な温度に設定すればよい。ところで、順方向状態に設定した場合には、反応室の第２ガス通過口付近の領域は排ガスと固体吸着剤との熱交換により蓄熱され予熱される。このため、逆方向状態に切替弁を切り替えたとき、未処理ガスの暖機に必要な熱源からの熱エネルギーを低減できる。この点は、逆方向状態から順方向状態に切り替えた場合も同様である。 In the gas treatment system of the present invention, the chemical adsorption device may have a heat source capable of heating the reaction chamber. If it carries out like this, a chemical adsorption apparatus can be warmed up and the neutralization reaction of the solid adsorption agent and the halogen component and / or sulfur component in untreated gas can be carried out efficiently. Although a heat source is not specifically limited, A resistance heater, a microwave, a gas burner, etc. are mentioned. Here, the warm-up temperature may be set to an appropriate temperature according to the combination of the halogen component and / or sulfur component and the solid adsorbent. By the way, when it sets to a forward direction state, the area | region near the 2nd gas passage opening of a reaction chamber is stored and preheated by heat exchange with waste gas and a solid adsorbent. For this reason, when the switching valve is switched to the reverse state, the heat energy from the heat source necessary for warming up the untreated gas can be reduced. This is the same when switching from the reverse state to the forward state.
本発明のガス処理システムにおいて、前記化学吸着装置に未処理ガスを供給する未処理ガス供給経路には、バルブを介して希釈ガス導入管から希釈ガスが導入可能としてもよい。この場合、切替器を切り替える直前にそのバルブを開いて未処理ガスを希釈ガスで十分希釈し、その後、そのバルブを閉めて切替器を切り替える。こうすれば、ガスの流れが順方向状態と逆方向状態との間で切り替わったときには、切替器から反応室までの間に溜まった未処理ガスがそのまま排出されることになるが、希釈ガスに希釈された状態で排出されるため、有害成分が高濃度のまま排出されることはない。 In the gas processing system of the present invention, a dilution gas may be introduced from a dilution gas introduction pipe via a valve into an untreated gas supply path for supplying an untreated gas to the chemical adsorption apparatus. In this case, immediately before switching the switch, the valve is opened to sufficiently dilute the untreated gas with the dilution gas, and then the valve is closed to switch the switch. In this way, when the gas flow is switched between the forward direction and the reverse direction, the untreated gas accumulated between the switch and the reaction chamber is discharged as it is, but the diluted gas Since it is discharged in a diluted state, harmful components are not discharged at a high concentration.
本発明のガス処理システムにおいて、前記化学吸着装置に未処理ガスを供給する未処理ガス供給経路と前記化学吸着装置から処理済みガスを排出する処理済みガス排出経路との間にバルブ付きの連通管が取り付けられると共に、該処理済みガス排出経路のうち前記連通管の取付位置より下流側に別のバルブが取り付けられていてもよい。この場合、通常は連通管を閉鎖すると共に処理済みガス排出経路を開放し、切替器を切り替えた直後の所定期間は連通管を開放すると共に処理済みガス排出経路を閉鎖する。こうすれば、ガスの流れが順方向状態と逆方向状態との間で切り替わったときには、切替器から反応室までの間に溜まった未処理ガスがそのまま処理済みガス排出経路に流れることになるが、連通管を介して再び未処理ガス供給経路に戻すことができる。 In the gas treatment system of the present invention, a communication pipe with a valve is provided between an untreated gas supply path for supplying untreated gas to the chemical adsorption apparatus and a treated gas discharge path for discharging treated gas from the chemical adsorption apparatus. May be attached, and another valve may be attached downstream of the treated gas discharge path from the attachment position of the communication pipe. In this case, the communication pipe is normally closed and the processed gas discharge path is opened, and the communication pipe is opened and the processed gas discharge path is closed for a predetermined period immediately after switching the switch. In this way, when the gas flow is switched between the forward direction and the reverse direction, the untreated gas accumulated between the switch and the reaction chamber flows directly into the treated gas discharge path. The untreated gas supply path can be returned again via the communication pipe.
本発明のガス処理システムにおいて、前記切替器は、ガスが通過可能な第１及び第２長孔が所定方向に並んで設けられたベース面部材と、前記ベース面部材と対向し、ガスが通過可能な第３及び第４長孔が前記所定方向と交差する方向に並び且ついずれも前記第１及び第２長孔の両方と重なり合うように設けられた対向面部材と、前記ベース面部材と前記対向面部材との間に摺動可能に配置され、第１姿勢に位置決めされたときには前記第１長孔と前記第３長孔との連通及び前記第２長孔と前記第４長孔との連通を許容し前記第１長孔と前記第４長孔との連通及び前記第２長孔と前記第３長孔との連通を遮断し、第２姿勢に位置決めされたときには前記第１長孔と前記第４長孔との連通及び前記第２長孔と前記第３長孔との連通を許容し前記第１長孔と前記第３長孔との連通及び前記第２長孔と前記第４長孔との連通を遮断するように複数の貫通孔が形成された制御部材と、前記ベース面部材及び前記対向面部材を取り囲み、前記第１長孔に接続され未処理ガスが供給されるガス供給口、前記第２長孔に接続され処理済みガスを排出するガス排出口、前記第３長孔と前記化学吸着装置の第１ガス通過口とを繋ぐ通気管及び前記第４長孔と前記化学吸着装置の第２ガス通過口とを繋ぐ通気管を有するハウジング部材と、を備えた摺動式切替バルブとしてもよい。この摺動式切替バルブの制御部材を第１姿勢に位置決めすると、ガス供給口は第１長孔と第３長孔を介して化学吸着装置の反応室の第１ガス通過口に接続されると共に反応室の第２ガス通過口は第４長孔と第２長孔を介してガス排出口に接続されるため、順方向状態に設定される。一方、第２姿勢に位置決めすると、ガス供給口は第１長孔と第４長孔を介して化学吸着装置の反応室の第２ガス通過口に接続されると共に反応室の第１ガス通過口は第３長孔と第２長孔を介してガス排出口に接続されるため、逆方向状態に設定される。つまり、順方向状態と逆方向状態を制御部材を操作することによって簡単に切り替えることができる。 In the gas processing system of the present invention, the switch is configured such that the first and second elongated holes through which the gas can pass are arranged in a predetermined direction, the base surface member is opposed to the base surface member, and the gas passes therethrough. Possible third and fourth elongated holes are arranged in a direction crossing the predetermined direction, and both are provided so as to overlap both the first and second elongated holes, the base surface member, When slidably arranged between the opposing surface members and positioned in the first posture, the first elongated hole communicates with the third elongated hole, and the second elongated hole and the fourth elongated hole communicate with each other. Communication is allowed, communication between the first long hole and the fourth long hole and communication between the second long hole and the third long hole are blocked, and the first long hole is positioned when positioned in the second posture. And communication between the fourth elongated hole and the second elongated hole and the third elongated hole, A control member having a plurality of through holes formed so as to block communication between one long hole and the third long hole and communication between the second long hole and the fourth long hole; the base surface member; A gas supply port that surrounds the opposing surface member, is connected to the first long hole and is supplied with untreated gas, a gas discharge port that is connected to the second long hole and discharges treated gas, the third long hole, A sliding switching valve comprising: a vent pipe connecting the first gas passage port of the chemical adsorption device; and a housing member having a vent pipe connecting the fourth elongated hole and the second gas passage port of the chemical adsorption device. It is good. When the control member of the sliding type switching valve is positioned in the first posture, the gas supply port is connected to the first gas passage port of the reaction chamber of the chemical adsorption device through the first long hole and the third long hole. Since the second gas passage port of the reaction chamber is connected to the gas outlet through the fourth elongated hole and the second elongated hole, it is set in the forward state. On the other hand, when positioned in the second position, the gas supply port is connected to the second gas passage port of the reaction chamber of the chemical adsorption device via the first and fourth slots and the first gas passage port of the reaction chamber. Is connected to the gas discharge port through the third long hole and the second long hole, and is set in the reverse direction. That is, the forward direction state and the reverse direction state can be easily switched by operating the control member.
なお、ベース面部材や対向面部材の材料は、特に限定するものではないが、例えば耐熱性を向上させる場合にはカーボンを使用してもよい。ハウジング部材の材料は、特に限定するものではないが、例えば放熱性を向上させる場合には熱伝導率の高いもの（例えばアルミニウム、銅、真鍮又はそれらの合金など）を使用することが好ましく、変形によるシール不良を回避させる場合には線膨張係数の小さいもの（例えばステンレス鋼など）を使用することが好ましい。制御部材の材料は、特に限定するものではないが、例えば耐熱（１８０℃以上）・耐食性を向上させる場合にはオーステナイト系ステンレス、マルテンサイト系ステンレスなどを使用することが好ましく、１８０℃未満の場合には安価で熱伝導率が高いもの（例えば亜鉛メッキ鋼板ＳＥＣＣ（冷延材）や亜鉛メッキ鋼板ＳＥＨＣ（熱延材）など）を使用することが好ましい。 In addition, although the material of a base surface member or an opposing surface member is not specifically limited, For example, when improving heat resistance, you may use carbon. The material of the housing member is not particularly limited. For example, in order to improve heat dissipation, it is preferable to use a material having high thermal conductivity (for example, aluminum, copper, brass, or an alloy thereof). In order to avoid a sealing failure due to, it is preferable to use a material having a small linear expansion coefficient (for example, stainless steel). The material of the control member is not particularly limited. For example, when improving heat resistance (180 ° C or higher) and corrosion resistance, it is preferable to use austenitic stainless steel, martensitic stainless steel, etc. It is preferable to use an inexpensive material having high thermal conductivity (for example, galvanized steel plate SECC (cold rolled material) or galvanized steel plate SEHC (hot rolled material)).
［第１実施形態］
次に、本発明の実施の形態を図面に基づいて説明する。図１及び図２は、第１実施形態のガス処理システム１０の説明図であり、図１は、スライドバルブ１１０を順方向状態に設定したとき、図２は、スライドバルブ１１０を逆方向状態に設定したときを表す。なお、図１及び図２は、説明の便宜上、スライドバルブ１１０を分解して示した。
[First Embodiment]
Next, embodiments of the present invention will be described with reference to the drawings. 1 and 2 are explanatory views of the gas processing system 10 according to the first embodiment. FIG. 1 shows a state in which the slide valve 110 is set in the forward direction, and FIG. When set. 1 and 2 show the slide valve 110 in an exploded manner for convenience of explanation.
このガス処理システム１０は、化学吸着装置２０とスライドバルブ１１０とを備えている。 The gas processing system 10 includes a chemical adsorption device 20 and a slide valve 110.
化学吸着装置２０は、ハロゲン成分及び／又は硫黄成分を中和反応により吸着可能な粒状の固体吸着剤Ａが充填された反応室２２を備えている。ここでは、固体吸着剤Ａは酸化カルシウム又は炭酸ナトリウムとする。吸着剤Ａには、融着抑制および蓄熱化促進のために非吸着成分である酸化ケイ素、酸化アルミニウムが加えられていても良い。この反応室２２には、第１ガス通過口２４と第２ガス通過口２８が設けられている。図１に示すように、第１ガス通過口２４は反応室２２の右側に設けられ、第２ガス通過口２８は反応室２２の左側（第１ガス通過口２４の反対側）に設けられている。第１ガス通過口２４には、細長い板からなる複数の羽板２６が所定の隙間をもって平行に取り付けられている。第２ガス通過口２８にも、第１ガス通過口２４と同様、複数の羽板３０が所定の隙間をもって平行に取り付けられている。各羽板２６，３０は、反応室２２の内から外に向かって上向きに傾斜するように取り付けられているため、固体吸着剤Ａが第１ガス通過口２４や第２ガス通過口２８から外へこぼれるのを防止すると共に、ガスが第１ガス通過口２４や第２ガス通過口２８を介して反応室２２に出入りするのを許容する役割を果たす。反応室２２は、上部に固体吸着剤Ａを供給可能なホッパ３２を有すると共に、下部に吸着剤排出口３４を介して固体吸着剤Ａを排出可能なスクリューコンベヤ３６を有している。固体吸着剤Ａは、反応室２２内を自重により上から下へ移動する。この移動方向は、第１ガス通過口２４と第２ガス通過口２８とを結んだ仮想線に交差する。この反応室２２には、上下方向に延びるヒータ３８（熱源）が配置されている。なお、ホッパ３２及び吸着剤排出口３４が本発明の供給部及び排出部に相当する。 The chemical adsorption device 20 includes a reaction chamber 22 filled with a granular solid adsorbent A capable of adsorbing a halogen component and / or a sulfur component by a neutralization reaction. Here, the solid adsorbent A is calcium oxide or sodium carbonate. In the adsorbent A, silicon oxide and aluminum oxide, which are non-adsorbing components, may be added in order to suppress fusion and promote heat storage. The reaction chamber 22 is provided with a first gas passage port 24 and a second gas passage port 28. As shown in FIG. 1, the first gas passage port 24 is provided on the right side of the reaction chamber 22, and the second gas passage port 28 is provided on the left side of the reaction chamber 22 (opposite side of the first gas passage port 24). Yes. A plurality of slats 26 made of elongated plates are attached to the first gas passage port 24 in parallel with a predetermined gap. Similarly to the first gas passage port 24, a plurality of blades 30 are attached to the second gas passage port 28 in parallel with a predetermined gap. Since each slat 26 and 30 is attached so as to incline upward from the inside of the reaction chamber 22, the solid adsorbent A is removed from the first gas passage port 24 and the second gas passage port 28. It serves to prevent spillage and allow gas to enter and exit the reaction chamber 22 via the first gas passage port 24 and the second gas passage port 28. The reaction chamber 22 has a hopper 32 capable of supplying the solid adsorbent A at the upper portion and a screw conveyor 36 capable of discharging the solid adsorbent A through the adsorbent discharge port 34 at the lower portion. The solid adsorbent A moves from the top to the bottom in the reaction chamber 22 due to its own weight. This moving direction intersects an imaginary line connecting the first gas passage port 24 and the second gas passage port 28. The reaction chamber 22 is provided with a heater 38 (heat source) extending in the vertical direction. The hopper 32 and the adsorbent discharge port 34 correspond to the supply unit and the discharge unit of the present invention.
スライドバルブ１１０は、一方の面に上下方向に並んだ第１及び第２接続口１２１，１２２と他方の面に左右方向に並んだ第３及び第４接続口１２３，１２４とを有するハウジング１２０と、このハウジング１２０内で上下にスライド可能なスライド板１６０とを備えている。第１接続口１２１には、塩化水素や亜硫酸ガス、硫酸ガスなどのハロゲン成分及び／又は硫黄成分を含む未処理ガスが外部から供給されるガス供給管７１が接続され、第２接続口１２２には、化学吸着装置２０を通過してきた処理済みガスを外部へ放出するガス排出管７３が接続されている。また、第３接続口１２３には、通気管８１を介して化学吸着装置２０の第１ガス通過口２４が接続され、第４接続口１２４には、通気管８３を介して化学吸着装置２０の第２ガス通過口２８が接続されている。 The slide valve 110 includes a housing 120 having first and second connection ports 121 and 122 arranged in the vertical direction on one surface and third and fourth connection ports 123 and 124 arranged in the horizontal direction on the other surface. And a slide plate 160 slidable up and down within the housing 120. The first connection port 121 is connected to a gas supply pipe 71 to which an untreated gas containing a halogen component such as hydrogen chloride, sulfurous acid gas, and sulfuric acid gas and / or a sulfur component is supplied from the outside. Is connected to a gas discharge pipe 73 for discharging the treated gas that has passed through the chemical adsorption device 20 to the outside. Further, the first gas passage port 24 of the chemical adsorption device 20 is connected to the third connection port 123 via the vent pipe 81, and the fourth connection port 124 is connected to the third adsorption port 20 of the chemical adsorption device 20 via the vent pipe 83. A second gas passage port 28 is connected.
ハウジング１２０は、カーボン製のベース面部材１３０を支持するベース面支持体１２０ａと、このベース面部材１３０と対向するカーボン製の対向面部材１４０を支持する対向面支持体１２０ｂとで構成されている。 The housing 120 includes a base surface support 120 a that supports the carbon base surface member 130, and a facing surface support 120 b that supports the carbon facing surface member 140 that faces the base surface member 130. .
ベース面支持体１２０ａは、熱伝導率の高いアルミニウム製の板状の部材である。このベース面支持体１２０ａには、対向面支持体１２０ｂと向かい合う面に窪み（図示せず）が設けられ、この窪みにベース面部材１３０が嵌め込まれている。第１及び第２接続口１２１，１２２は、ベース面支持体１２０ａを厚さ方向に貫通している。ベース面部材１３０には、左右方向に長く伸びる第１及び第２長孔１３１，１３２が上下方向に並んで設けられ、第１長孔１３１の略中央に第１接続口１２１が配置され、第２長孔１３２の略中央に第２接続口１２２が配置されている。このベース面部材１３０のうちベース面支持体１２０ａと接する面には、第１及び第２長孔１３１，１３２の周囲に沿って設けられた凹溝にフッ素樹脂製のシールリングであるＶリング１３５，１３６が嵌め込まれている。 The base surface support 120a is a plate-shaped member made of aluminum having a high thermal conductivity. The base surface support 120a is provided with a recess (not shown) on the surface facing the opposing surface support 120b, and the base surface member 130 is fitted into the recess. The first and second connection ports 121 and 122 penetrate the base surface support 120a in the thickness direction. The base surface member 130 is provided with first and second elongated holes 131 and 132 that extend in the left-right direction side by side in the up-down direction. The first connection port 121 is disposed substantially at the center of the first elongated hole 131, and the first The second connection port 122 is disposed substantially at the center of the two long holes 132. On the surface of the base surface member 130 that is in contact with the base surface support 120a, a V-ring 135, which is a fluororesin seal ring, is formed in a groove provided along the periphery of the first and second elongated holes 131 and 132. , 136 are fitted.
対向面支持体１２０ｂは、ベース面支持体１２０ａと同様、アルミニウム製の部材である。この対向面支持体１２０ｂには、ベース面支持体１２０ａと向かい合う面に窪み１２５が設けられ、この窪み１２５に対向面部材１４０が嵌め込まれている。第３及び第４接続口１２３，１２４は、対向面支持体１２０ｂを厚さ方向に貫通している。対向面部材１４０には、上下方向に長く伸びる長円形状の第３及び第４長孔１４３，１４４が左右方向に並んで設けられ、第３長孔１４３の略中央に第３接続口１２３が配置され、第４長孔１４４の略中央に第４接続口１２４が配置されている。また、第３長孔１４３は、第１及び第２長孔１３１，１３２の右側と重なり合うように設けられ、第４長孔１４４は、第１及び第２長孔１３１，１３２の左側と重なり合うように設けられている。対向面部材１４０のうち対向面支持体１２０ｂと接する面には、第３及び第４長孔１４３，１４４の周囲に沿って設けられた凹溝にフッ素樹脂製のＶリング１４５，１４６が嵌め込まれている。また、対向面支持体１２０ｂは、左右両側に所定の高さの突堤１２７，１２８が形成されている。ハウジング１２０は、ベース面支持体１２０ａと対向面支持体１２０ｂとを重ね合わせた状態で、ベース面支持体１２０ａの左右両側と対向面支持体１２０ｂの左右両側に形成された突堤１２７，１２８とを複数のネジで締結されている。このハウジング１２０の内部には、突堤１２７，１２８の存在により上下方向に連通する空洞が形成される。 The facing surface support 120b is a member made of aluminum like the base surface support 120a. The facing surface support 120 b is provided with a recess 125 on the surface facing the base surface support 120 a, and the facing surface member 140 is fitted into the recess 125. The third and fourth connection ports 123 and 124 penetrate the opposing surface support 120b in the thickness direction. The opposing surface member 140 is provided with ellipse-shaped third and fourth elongated holes 143 and 144 extending in the up-down direction in the left-right direction, and a third connection port 123 is provided at substantially the center of the third elongated hole 143. The fourth connection port 124 is disposed substantially at the center of the fourth long hole 144. The third long hole 143 is provided so as to overlap the right side of the first and second long holes 131 and 132, and the fourth long hole 144 is overlapped with the left side of the first and second long holes 131 and 132. Is provided. V-rings 145 and 146 made of fluororesin are fitted into concave grooves provided along the periphery of the third and fourth elongated holes 143 and 144 on the surface of the facing surface member 140 that contacts the facing surface support 120b. ing. Moreover, the opposing surface support body 120b is formed with jetties 127 and 128 having a predetermined height on both the left and right sides. The housing 120 includes, in a state in which the base surface support 120a and the facing surface support 120b are overlapped, the left and right sides of the base surface support 120a and the jetties 127 and 128 formed on the left and right sides of the facing surface support 120b. Fastened with multiple screws. Inside the housing 120, a cavity communicating in the vertical direction is formed by the presence of the jetty 127,128.
スライド板１６０は、制御部材に相当するものであり、マルテンサイト系ステンレス（ＳＵＳ４１０）製の板状の部材である。このスライド板１６０は、ハウジング１２０に形成された空洞内にて、ベース面部材１３０と対向面部材１４０とに挟持されている。具体的には、スライド板１６０は、Ｖリング１３５，１３６，１４５，１４６が弾性力を有するため、ベース面部材１３０と対向面部材１４０とによって弾性支持される。この結果、スライド板１６０は上下方向に摺動可能に支持されると共に、スライド板１６０とベース面部材１３０とのシール性やスライド板１６０と対向面部材１４０とのシール性が確保される。また、スライド板１６０は、三角形の頂点の位置に３つの第１〜第３貫通孔１６１，１６２，１６３を有している。 The slide plate 160 corresponds to a control member, and is a plate-like member made of martensitic stainless steel (SUS410). The slide plate 160 is sandwiched between the base surface member 130 and the facing surface member 140 in a cavity formed in the housing 120. Specifically, the slide plate 160 is elastically supported by the base surface member 130 and the opposing surface member 140 because the V rings 135, 136, 145, and 146 have elastic force. As a result, the slide plate 160 is supported so as to be slidable in the vertical direction, and the sealing property between the slide plate 160 and the base surface member 130 and the sealing property between the slide plate 160 and the facing surface member 140 are ensured. The slide plate 160 has three first to third through holes 161, 162, and 163 at the positions of the apexes of the triangle.
ここで、スライド板１６０が第１姿勢に位置決めされたとき、図１に示すように、第１長孔１３１と第３長孔１４３とはスライド板１６０の第１貫通孔１６１によって連通が許容され、第２長孔１３２と第４長孔１４４とはスライド板１６０の第２貫通孔１６２によって連通が許容される。また、第１長孔１３１と第４長孔１４４、第２長孔１３２と第３長孔１４３とはスライド板１６０によって連通が遮断される。一方、スライド板１６０が第２姿勢に位置決めされたとき、図２に示すように、第１長孔１３１と第４長孔１４４とはスライド板１６０の第２貫通孔１６２によって連通が許容され、第２長孔１３２と第３長孔１４３とはスライド板１６０の第３貫通孔１６３によって連通が許容される。また、第１長孔１３１と第３長孔１４３、第２長孔１３２と第４長孔１４４とはスライド板１６０によって連通が遮断される。なお、ここでは、スライド板１６０は図示しない空気圧シリンダにより直線的に上下動させるものとした。 Here, when the slide plate 160 is positioned in the first posture, as shown in FIG. 1, the first long hole 131 and the third long hole 143 are allowed to communicate with each other through the first through hole 161 of the slide plate 160. The second long hole 132 and the fourth long hole 144 are allowed to communicate with each other through the second through hole 162 of the slide plate 160. Further, the first long hole 131 and the fourth long hole 144, and the second long hole 132 and the third long hole 143 are disconnected from each other by the slide plate 160. On the other hand, when the slide plate 160 is positioned in the second posture, as shown in FIG. 2, the first long hole 131 and the fourth long hole 144 are allowed to communicate with each other through the second through hole 162 of the slide plate 160. The second long hole 132 and the third long hole 143 are allowed to communicate with each other through the third through hole 163 of the slide plate 160. Further, the first long hole 131 and the third long hole 143, and the second long hole 132 and the fourth long hole 144 are blocked from communication by the slide plate 160. Here, the slide plate 160 is moved up and down linearly by a pneumatic cylinder (not shown).
次に、本実施形態のガス処理システム１０の使用例について、図１及び図２を用いて説明する。ここでは、事前にヒータ３８によって化学吸着装置２０の暖機が行われ、反応室２２における中和反応が進行しやすい温度に設定されているものとする。なお、暖機温度は、ハロゲン成分及び／又は硫黄成分と固体吸着剤の組み合わせに応じて適宜適切な温度に設定すればよい（後述する表１参照）。また、ガス排出管７３の下流側には図示しないブロワ（誘引通風機）が接続され、このブロワを回転させることにより反応室２２や通気管８１，８３の内部は負圧になっているものとする。 Next, the usage example of the gas processing system 10 of this embodiment is demonstrated using FIG.1 and FIG.2. Here, it is assumed that the chemical adsorption device 20 is warmed up by the heater 38 in advance and set to a temperature at which the neutralization reaction in the reaction chamber 22 is likely to proceed. In addition, what is necessary is just to set warming-up temperature to a suitable temperature suitably according to the combination of a halogen component and / or a sulfur component, and a solid adsorbent (refer Table 1 mentioned later). Further, a blower (not shown) that is not shown is connected to the downstream side of the gas discharge pipe 73. By rotating this blower, the inside of the reaction chamber 22 and the vent pipes 81 and 83 is at a negative pressure. To do.
スライドバルブ１１０のスライド板１６０を上にスライドさせて第１姿勢に位置決めした状態では、図１に示すように、ガス供給管７１から供給されたハロゲン成分及び／又は硫黄成分を含む未処理ガスは第１接続口１２１から第１長孔１３１、第１貫通孔１６１、第３長孔１４３、第３接続口１２３及び通気管８１を通って化学吸着装置２０の第１ガス通過口２４から反応室２２に進入する。反応室２２に進入した未処理ガスは、図１にて右から左へ移動しながら反応室２２内を上から下に移動する固体吸着剤Ａと接触して中和反応を起こす。このとき、反応室２２のうち第１ガス通過口２４に近い領域では、未処理ガスは高濃度のハロゲン成分及び／又は硫黄成分を含んでいるため、中和反応による発熱量が多く高温になりやすい。一方、反応室２２のうち第２ガス通過口２８に近い領域では、ハロゲン成分及び／又は硫黄成分の濃度が低下しているため、中和反応による発熱量は少なく高温になりにくい。このように、反応室２２では第１ガス通過口２４に近いほど高温になりやすい。さて、反応室２２を通過したあとのガスは、第２ガス通過口２８、通気管８３、第４接続口１２４，第４長孔１４４、第２貫通孔１６２、第２長孔１３２を通って第２接続口１２２からガス排出管７３へと導出される。このようなガスの流れを順方向状態という。順方向状態で運転を継続すると、反応室２２のうち第１ガス通過口２４に近い領域が徐々に高温化する。 In a state where the slide plate 160 of the slide valve 110 is slid upward and positioned in the first posture, as shown in FIG. 1, the untreated gas containing the halogen component and / or sulfur component supplied from the gas supply pipe 71 is From the first connection port 121 through the first long hole 131, the first through hole 161, the third long hole 143, the third connection port 123, and the vent pipe 81, the reaction chamber is opened from the first gas passage port 24 of the chemical adsorption device 20. Enter 22 The untreated gas that has entered the reaction chamber 22 contacts the solid adsorbent A moving from the top to the bottom in the reaction chamber 22 while moving from right to left in FIG. At this time, in the region close to the first gas passage port 24 in the reaction chamber 22, the untreated gas contains a high concentration of halogen components and / or sulfur components, so that the amount of heat generated by the neutralization reaction is large and the temperature becomes high. Cheap. On the other hand, in the region close to the second gas passage port 28 in the reaction chamber 22, since the concentration of the halogen component and / or the sulfur component is reduced, the amount of heat generated by the neutralization reaction is small and the temperature is not easily increased. Thus, the closer to the first gas passage port 24 in the reaction chamber 22, the higher the temperature. The gas that has passed through the reaction chamber 22 passes through the second gas passage port 28, the vent pipe 83, the fourth connection port 124, the fourth long hole 144, the second through hole 162, and the second long hole 132. The gas is discharged from the second connection port 122 to the gas exhaust pipe 73. Such a gas flow is called a forward state. If the operation is continued in the forward direction, the region near the first gas passage port 24 in the reaction chamber 22 gradually increases in temperature.
そして、反応室２２のうち第１ガス通過口２４に近い領域の温度が固体吸着剤Ａの融着温度に達する前に、スライドバルブ１１０のスライド板１６０を下にスライドさせて第２姿勢に位置決めする。すると、図２に示すように、ガス供給管７１から供給された未処理ガスは第１接続口１２１から第１長孔１３１、第２貫通孔１６２、第４長孔１４４、第４接続口１２４及び通気管８３を通って化学吸着装置２０の第２ガス通過口２８から反応室２２に進入する。反応室２２に進入した未処理ガスは、図２にて左から右へ移動しながら反応室２２内を上から下に移動する固体吸着剤Ａと接触して中和反応を起こす。このとき、反応室２２のうち第２ガス通過口２８に近い領域では、未処理ガスは高濃度のハロゲン成分及び／又は硫黄成分を含んでいるため、中和反応による発熱量が多く高温になりやすい。一方、反応室２２のうち第１ガス通過口２４に近い領域では、ハロゲン成分及び／又は硫黄成分の濃度が低下しているため、中和反応による発熱量は少なく高温になりにくい。このように、反応室２２では第２ガス通過口２８に近いほど高温になりやすい。そして、反応室２２を通過したあとのガスは、第１ガス通過口２４、通気管８１、第３接続口１２３，第３長孔１４３、第３貫通孔１６３、第２長孔１３２を通って第２接続口１２２からガス排出管７３へと導出される。このようなガスの流れを逆方向状態という。逆方向状態で運転を継続すると、反応室２２のうち第２ガス通過口２８に近い領域が徐々に高温化する。また、前回まで順方向状態に設定されていて反応室２２のうち第１ガス通過口２４に近い領域が高温になっていたとしても、逆方向状態に設定されたあとはその領域の温度が徐々に低下するため、その領域で固体吸着剤Ａが融着することはない。 Then, before the temperature of the region close to the first gas passage port 24 in the reaction chamber 22 reaches the fusion temperature of the solid adsorbent A, the slide plate 160 of the slide valve 110 is slid down and positioned in the second posture. To do. Then, as shown in FIG. 2, the untreated gas supplied from the gas supply pipe 71 passes through the first connection port 121, the first long hole 131, the second through hole 162, the fourth long hole 144, and the fourth connection port 124. And enters the reaction chamber 22 from the second gas passage port 28 of the chemical adsorption device 20 through the vent pipe 83. The untreated gas that has entered the reaction chamber 22 contacts the solid adsorbent A moving from the top to the bottom in the reaction chamber 22 while moving from left to right in FIG. At this time, in the region close to the second gas passage port 28 in the reaction chamber 22, the untreated gas contains a high concentration of halogen components and / or sulfur components, so that the amount of heat generated by the neutralization reaction is large and the temperature becomes high. Cheap. On the other hand, in the region close to the first gas passage port 24 in the reaction chamber 22, since the concentration of the halogen component and / or the sulfur component is reduced, the amount of heat generated by the neutralization reaction is small and the temperature is not easily increased. Thus, the closer to the second gas passage port 28 in the reaction chamber 22, the higher the temperature becomes. The gas after passing through the reaction chamber 22 passes through the first gas passage port 24, the vent pipe 81, the third connection port 123, the third long hole 143, the third through hole 163, and the second long hole 132. The gas is discharged from the second connection port 122 to the gas exhaust pipe 73. Such a gas flow is called a reverse state. When the operation is continued in the reverse direction, the temperature of the region close to the second gas passage port 28 in the reaction chamber 22 gradually increases. Even if the region close to the first gas passage port 24 in the reaction chamber 22 is set to the forward state until the previous time, the temperature of the region gradually increases after the reverse state is set. Therefore, the solid adsorbent A is not fused in that region.
そして、反応室２２の第２ガス通過口２８に近い領域の温度が固体吸着剤Ａの融着温度に達する前に、スライドバルブ１１０のスライド板１６０を上にスライドさせて第１姿勢に位置決めする。すると、再び図１のように未処理ガスの流れが切り替わる。この状態を継続することにより、反応室２２のうち第２ガス通過口２８に近い領域の温度が徐々に低下し、代わりに反応室２２のうち第１ガス通過口２４に近い領域の温度が徐々に上昇する。このように、適宜のタイミングでスライド板１６０を第１姿勢と第２姿勢との間で切り替えることにより、ガスの流れが順方向状態と逆方向状態との間で切り替わり、反応室２２における第１ガス通過口２４の付近の温度と第２ガス通過口２８の付近の温度を常に適正に保つことができる。その結果、反応室２２内で固体吸着剤Ａが融着するのを防止することができる。 Then, before the temperature in the region near the second gas passage port 28 in the reaction chamber 22 reaches the fusion temperature of the solid adsorbent A, the slide plate 160 of the slide valve 110 is slid upward and positioned in the first posture. . Then, the flow of the untreated gas is switched again as shown in FIG. By continuing this state, the temperature of the region near the second gas passage port 28 in the reaction chamber 22 gradually decreases, and instead, the temperature of the region near the first gas passage port 24 in the reaction chamber 22 gradually decreases. To rise. Thus, by switching the slide plate 160 between the first posture and the second posture at an appropriate timing, the gas flow is switched between the forward direction state and the reverse direction state, and the first in the reaction chamber 22 is changed. The temperature near the gas passage port 24 and the temperature near the second gas passage port 28 can always be kept appropriate. As a result, it is possible to prevent the solid adsorbent A from being fused in the reaction chamber 22.
以上詳述した本実施形態のガス処理システム１０によれば、順方向状態と逆方向状態とを適宜切り替えることが可能であるため、反応室２２内の固体吸着剤Ａが溶着するのを防止できる。また、ハロゲン成分及び／又は硫黄成分を中和した後の固体吸着剤Ａは吸着剤排出口３４から排出されると共に新たな固体吸着剤Ａがホッパ３２から供給されるため、反応室２２における、ハロゲン成分及び／又は硫黄成分を除去する機能を長期間維持することができるし、上述したように固体吸着剤Ａが溶着するのを防止できるため、固体吸着剤Ａの流動性が悪化することがない。更に、ヒータ３８により予め化学吸着装置２０を暖機しておけば、固体吸着剤Ａと未処理ガス中のハロゲン成分及び／又は硫黄成分との中和反応を効率よく実施することができる。更にまた、順方向状態と逆方向状態をスライドバルブ１１０のスライド板１６０を操作することによって簡単に切り替えることができる。そしてまた、順方向状態に設定した場合には、反応室２２の第２ガス通過口２８の近くの領域は排ガスと固体吸着剤Ａとの熱交換により蓄熱され予熱される。このため、逆方向状態に切り替えたとき、未処理ガスの暖機に必要なヒータ３８からの熱エネルギーを低減できる。この点は、逆方向状態から順方向状態に切り替えた場合も同様である。 According to the gas processing system 10 of the present embodiment described in detail above, since it is possible to appropriately switch between the forward direction state and the reverse direction state, it is possible to prevent the solid adsorbent A in the reaction chamber 22 from being welded. . Further, since the solid adsorbent A after neutralizing the halogen component and / or sulfur component is discharged from the adsorbent discharge port 34 and a new solid adsorbent A is supplied from the hopper 32, Since the function of removing the halogen component and / or sulfur component can be maintained for a long period of time and the solid adsorbent A can be prevented from welding as described above, the fluidity of the solid adsorbent A can be deteriorated. Absent. Furthermore, if the chemical adsorption device 20 is warmed up beforehand by the heater 38, the neutralization reaction between the solid adsorbent A and the halogen component and / or sulfur component in the untreated gas can be efficiently carried out. Furthermore, the forward direction state and the reverse direction state can be easily switched by operating the slide plate 160 of the slide valve 110. When the forward state is set, the region near the second gas passage port 28 in the reaction chamber 22 is stored and preheated by heat exchange between the exhaust gas and the solid adsorbent A. For this reason, when it switches to a reverse direction state, the thermal energy from the heater 38 required for warming up of untreated gas can be reduced. This is the same when switching from the reverse state to the forward state.
［第２実施形態］
図３及び図４は、第２実施形態のガス処理システム２１０の説明図であり、図３は、スライドバルブ１１０を順方向状態に設定したとき、図４は、スライドバルブ１１０を逆方向状態に設定したときを表す。
[Second Embodiment]
3 and 4 are explanatory diagrams of the gas processing system 210 according to the second embodiment. FIG. 3 shows the slide valve 110 in the reverse direction when the slide valve 110 is set in the forward direction. When set.
ガス処理システム２１０は、化学吸着装置２２０とスライドバルブ１１０とを備えている。 The gas processing system 210 includes a chemical adsorption device 220 and a slide valve 110.
化学吸着装置２２０は、ハロゲン成分及び／又は硫黄成分を中和反応により吸着可能な粒状の固体吸着剤Ａが充填された反応室２２２を備えている。この反応室２２２には、第１ガス通過口２２４と第２ガス通過口２２８が設けられている。図３に示すように、第１ガス通過口２２４は反応室２２２の左側上方に設けられ、第２ガス通過口２２８は反応室２２２の左側下方に設けられている。第１ガス通過口２２４には、複数の羽板２２６が所定の隙間をもって平行に取り付けられている。第２ガス通過口２２８にも、複数の羽板２３０が所定の隙間をもって平行に取り付けられている。これらの羽板２２６，２３０の役割は第１実施形態と同様である。反応室２２２は、上部に固体吸着剤Ａを供給可能なホッパ２３２を有すると共に、下部に吸着剤排出口２３４を介して固体吸着剤Ａを排出可能なスクリューコンベヤ２３６を有している。固体吸着剤Ａは、反応室２２２内を自重により上から下へ移動する。反応室２２２の床２３３は、第１及び第２ガス通過口２２４，２２８が形成されていない側（図３で右側）からこれらが形成されている側（図３で左側）に向かって下り傾斜となっており、もっとも低い部分に吸着剤排出口２３４が設けられている。そして、吸着剤排出口２３４の下方には、固体吸着剤Ａを搬送可能なスクリューコンベヤ３６が設けられている。このように床２３３が傾斜しているため、ホッパ２３２から供給される固体吸着剤Ａが吸着剤排出口２３４まで移動するときの移動速度は反応室２２２内で図３の右側に比べて左側の方が速くなる。また、反応室２２２には、上下方向に延びるヒータ２３８が配置されている。なお、ホッパ２３２及び吸着剤排出口２３４が本発明の供給部及び排出部に相当する。 The chemical adsorption apparatus 220 includes a reaction chamber 222 filled with a granular solid adsorbent A capable of adsorbing a halogen component and / or a sulfur component by a neutralization reaction. The reaction chamber 222 is provided with a first gas passage port 224 and a second gas passage port 228. As shown in FIG. 3, the first gas passage port 224 is provided on the upper left side of the reaction chamber 222, and the second gas passage port 228 is provided on the lower left side of the reaction chamber 222. A plurality of vanes 226 are attached to the first gas passage port 224 in parallel with a predetermined gap. A plurality of slats 230 are also attached to the second gas passage port 228 in parallel with a predetermined gap. The roles of these slats 226 and 230 are the same as in the first embodiment. The reaction chamber 222 has a hopper 232 capable of supplying the solid adsorbent A at the upper portion, and a screw conveyor 236 capable of discharging the solid adsorbent A through the adsorbent discharge port 234 at the lower portion. The solid adsorbent A moves from the top to the bottom in the reaction chamber 222 by its own weight. The floor 233 of the reaction chamber 222 is inclined downward from the side where the first and second gas passage ports 224 and 228 are not formed (right side in FIG. 3) toward the side where these are formed (left side in FIG. 3). The adsorbent discharge port 234 is provided in the lowest part. A screw conveyor 36 capable of transporting the solid adsorbent A is provided below the adsorbent discharge port 234. Since the floor 233 is inclined as described above, the moving speed when the solid adsorbent A supplied from the hopper 232 moves to the adsorbent discharge port 234 is lower in the reaction chamber 222 than on the right side in FIG. Will be faster. In the reaction chamber 222, a heater 238 extending in the vertical direction is disposed. The hopper 232 and the adsorbent discharge port 234 correspond to the supply unit and the discharge unit of the present invention.
スライドバルブ１１０は、第１実施形態で採用したものと同じであるため、具体的な説明を省略する。 Since the slide valve 110 is the same as that employed in the first embodiment, a specific description thereof will be omitted.
次に、本実施形態のガス処理システム２１０の使用例について、図３及び図４を用いて説明する。ここでは、事前にヒータ２３８によって化学吸着装置２２０の暖機が行われ、反応室２２２における中和反応が進行しやすい温度に設定されているものとする。また、ガス排出管７３の下流側には図示しないブロワ（誘引通風機）が接続され、このブロワを回転させることにより反応室２２２や通気管８１，８３の内部は負圧になっているものとする。 Next, a usage example of the gas processing system 210 of the present embodiment will be described with reference to FIGS. 3 and 4. Here, it is assumed that the chemical adsorption device 220 is warmed up by the heater 238 in advance and set to a temperature at which the neutralization reaction in the reaction chamber 222 is likely to proceed. Further, a blower (not shown) that is not shown is connected to the downstream side of the gas discharge pipe 73. By rotating this blower, the inside of the reaction chamber 222 and the vent pipes 81 and 83 has a negative pressure. To do.
スライドバルブ１１０のスライド板１６０を上にスライドさせて第１姿勢に位置決めした状態（図１参照）では、未処理ガスは順方向に流れる。すなわち、図３に示すように、ガス供給管７１から供給されたハロゲン成分及び／又は硫黄成分を含む未処理ガスは、スライドバルブ１１０の第１接続口１２１，第３接続口１２３を経て通気管８１を通って化学吸着装置２２０の第１ガス通過口２２４から反応室２２２に進入し、この反応室２２２内の固体吸着剤Ａと中和反応を起こす。反応室２２２を上から下へ通過したあとのガスは、第２ガス通過口２２８から、通気管８３を通ってスライドバルブ１１０の第４接続口１２４，第２接続口１２２を経てガス排出管７３へと導出される。こうした順方向状態では、反応室２２２のうち第１ガス通過口２２４に近い領域で中和反応が活発に起こるため、この領域の温度が最も高くなりやすい。 In a state where the slide plate 160 of the slide valve 110 is slid upward and positioned in the first posture (see FIG. 1), the untreated gas flows in the forward direction. That is, as shown in FIG. 3, the untreated gas containing the halogen component and / or the sulfur component supplied from the gas supply pipe 71 passes through the first connection port 121 and the third connection port 123 of the slide valve 110, and the ventilation pipe. It enters the reaction chamber 222 through the first gas passage port 224 of the chemical adsorption device 220 through 81 and causes a neutralization reaction with the solid adsorbent A in the reaction chamber 222. The gas that has passed through the reaction chamber 222 from the top to the bottom passes through the second gas passage port 228, the vent tube 83, the fourth connection port 124 of the slide valve 110, the second connection port 122, and the gas discharge tube 73. Is derived. In such a forward state, the neutralization reaction occurs actively in a region near the first gas passage port 224 in the reaction chamber 222, and therefore the temperature in this region is likely to be highest.
そして、反応室２２２のうち第１ガス通過口２２４に近い領域の温度が固体吸着剤Ａの融着温度に達する前に、スライドバルブ１１０のスライド板１６０を下にスライドさせて第２姿勢に位置決めする(図２参照）。すると、未処理ガスは逆方向に流れる。すなわち、図４に示すように、ガス供給管７１から供給された未処理ガスは、スライドバルブ１１０の第１接続口１２１，第４接続口１２４を経て通気管８３を通って化学吸着装置２２０の第２ガス通過口２２８から反応室２２２に進入し、この反応室２２２内の固体吸着剤Ａと中和反応を起こす。反応室２２２を下から上へ通過したあとのガスは、第１ガス通過口２２４から、通気管８１を通ってスライドバルブ１１０の第３接続口１２３，第２接続口１２２を経てガス排出管７３へと導出される。こうした逆方向状態では、反応室２２２のうち第２ガス通過口２２８に近い領域で中和反応が活発に起こるため、この領域の温度が最も高くなりやすい。 Then, before the temperature of the region close to the first gas passage port 224 in the reaction chamber 222 reaches the fusion temperature of the solid adsorbent A, the slide plate 160 of the slide valve 110 is slid down and positioned in the second posture. (See FIG. 2). Then, the untreated gas flows in the reverse direction. That is, as shown in FIG. 4, the untreated gas supplied from the gas supply pipe 71 passes through the first connection port 121 and the fourth connection port 124 of the slide valve 110, passes through the vent pipe 83, and is supplied to the chemical adsorption device 220. It enters the reaction chamber 222 from the second gas passage port 228 and causes a neutralization reaction with the solid adsorbent A in the reaction chamber 222. The gas after passing from the bottom to the top of the reaction chamber 222 passes through the first gas passage port 224, the vent pipe 81, the third connection port 123 and the second connection port 122 of the slide valve 110, and the gas discharge pipe 73. Is derived. In such a reverse state, the neutralization reaction occurs actively in a region near the second gas passage port 228 in the reaction chamber 222, and therefore the temperature in this region is likely to be highest.
そして、反応室２２２のうち第２ガス通過口２２８に近い領域の温度が固体吸着剤Ａの融着温度に達する前に、スライドバルブ１１０のスライド板１６０を上にスライドさせて第１姿勢に位置決めする。すると、未処理ガスの流れが順方向に切り替わる。この状態を継続することにより、反応室２２２のうち第２ガス通過口２２８に近い領域の温度が徐々に低下し、代わりに反応室２２２のうち第１ガス通過口２２４に近い領域の温度が徐々に上昇する。このように、適宜のタイミングでスライド板１６０を第１姿勢と第２姿勢との間で切り替えることにより、ガスの流れが順方向状態と逆方向状態との間で切り替わり、反応室２２２のうち第１ガス通過口２２４の付近の温度と第２ガス通過口２２８の付近の温度を常に適正に保つことができる。その結果、反応室２２２内で固体吸着剤Ａが融着するのを防止することができる。 Then, before the temperature in the region close to the second gas passage port 228 in the reaction chamber 222 reaches the fusion temperature of the solid adsorbent A, the slide plate 160 of the slide valve 110 is slid upward and positioned in the first posture. To do. Then, the flow of untreated gas is switched in the forward direction. By continuing this state, the temperature of the region near the second gas passage port 228 in the reaction chamber 222 gradually decreases, and instead, the temperature of the region near the first gas passage port 224 in the reaction chamber 222 gradually increases. To rise. As described above, by switching the slide plate 160 between the first posture and the second posture at an appropriate timing, the gas flow is switched between the forward direction state and the reverse direction state. The temperature near the first gas passage port 224 and the temperature near the second gas passage port 228 can always be kept appropriate. As a result, the solid adsorbent A can be prevented from being fused in the reaction chamber 222.
以上詳述した本実施形態のガス処理システム２１０によれば、第１実施形態と同様の効果が得られる。 According to the gas processing system 210 of this embodiment described in detail above, the same effects as those of the first embodiment can be obtained.
なお、本発明は上述した実施形態に何ら限定されることはなく、本発明の技術的範囲に属する限り種々の態様で実施し得ることはいうまでもない。 It should be noted that the present invention is not limited to the above-described embodiment, and it goes without saying that the present invention can be implemented in various modes as long as it belongs to the technical scope of the present invention.
例えば、上述した第１及び第２実施形態では、切替器としてスライドバルブ１１０を採用したが、スライドバルブ１１０の代わりに図５及び図６に示すように複数の配管７４〜７７及び開閉バルブ７４ａ〜７７ａを採用してもよい。具体的には、化学吸着装置２０の第１ガス通過口２４に導入管７４と導出管７７を接続し、第２ガス通過口２８に導入管７５と導出管７６を接続し、各管７４〜７７に開閉バルブ７４ａ〜７７ａを取り付ける。そして、図５のように、開閉バルブ７４ａ，７６ａを開、開閉バルブ７５ａ，７７ａを閉とすると、未処理ガスは、導入管７４から化学吸着装置２０の第１ガス通過口２４、反応室２２、第２ガス通過口２８をこの順に通過したあと導出管７６に導出される（順方向状態）。一方、図６のように、開閉バルブ７４ａ，７６ａを閉、開閉バルブ７５ａ，７７ａを開に切り替えると、未処理ガスは、導入管７５から化学吸着装置２０の第２ガス通過口２８、反応室２２，第１ガス通過口２４をこの順に通過したあと導出管７７に導出される。この場合でも、上述した第１及び第２実施形態と同様の効果が得られる。但し、図５及び図６では、４つの開閉バルブ７４ａ〜７７ａを操作する必要があるのに対して、スライドバルブ１１０を採用した場合にはこのスライドバルブ１１０を１つだけ操作すればよいため、ガスの流れを切り替えるのに必要な構成をコンパクトにすることができる。 For example, in the first and second embodiments described above, the slide valve 110 is employed as the switch. However, instead of the slide valve 110, a plurality of pipes 74 to 77 and on-off valves 74a to 74a are used as shown in FIGS. 77a may be adopted. Specifically, the introduction pipe 74 and the outlet pipe 77 are connected to the first gas passage port 24 of the chemical adsorption apparatus 20, and the introduction pipe 75 and the outlet pipe 76 are connected to the second gas passage port 28. Open / close valves 74 a to 77 a are attached to 77. As shown in FIG. 5, when the on-off valves 74 a and 76 a are opened and the on-off valves 75 a and 77 a are closed, untreated gas flows from the introduction pipe 74 to the first gas passage port 24 and the reaction chamber 22 of the chemical adsorption device 20. Then, after passing through the second gas passage port 28 in this order, it is led out to the lead-out pipe 76 (forward direction state). On the other hand, as shown in FIG. 6, when the on-off valves 74a and 76a are closed and the on-off valves 75a and 77a are switched to open, the untreated gas flows from the introduction pipe 75 to the second gas passage port 28 of the chemical adsorption device 20, the reaction chamber. 22, after passing through the first gas passage port 24 in this order, it is led out to the lead-out pipe 77. Even in this case, the same effects as those of the first and second embodiments described above can be obtained. However, in FIGS. 5 and 6, it is necessary to operate the four open / close valves 74 a to 77 a, whereas when the slide valve 110 is employed, only one slide valve 110 needs to be operated. The configuration necessary for switching the gas flow can be made compact.
上述した第１実施形態では、反応室２２内を固体吸着剤Ａが上から下へ移動するようにしたが、ホッパ３２及び吸着剤排出口３４を閉鎖して固体吸着剤Ａを移動しないようにしてもよい。また、第２実施形態についても、同様に固体吸着剤Ａを移動しないようにしてもよい。この場合、運転を継続するに従って固体吸着剤Ａはハロゲン成分及び／又は硫黄成分を中和する能力が低下するため、適宜のタイミングでホッパ３２及び吸着剤排出口３４を開放して固体吸着剤Ａを新品に交換することが好ましい。また、ホッパ３２及び吸着剤排出口３４を用いず、通気が可能なカートリッジ容器に固体吸着剤Ａを詰めて、カートリッジ容器ごと交換するようにしてもよい。こうすれば、固体吸着剤Ａの交換作業が容易になる。 In the first embodiment described above, the solid adsorbent A moves from top to bottom in the reaction chamber 22, but the hopper 32 and the adsorbent discharge port 34 are closed so that the solid adsorbent A does not move. May be. Similarly, in the second embodiment, the solid adsorbent A may not be moved. In this case, since the solid adsorbent A has a reduced ability to neutralize the halogen component and / or sulfur component as the operation is continued, the solid adsorbent A is opened by opening the hopper 32 and the adsorbent outlet 34 at an appropriate timing. Is preferably replaced with a new one. Further, instead of using the hopper 32 and the adsorbent discharge port 34, the solid adsorbent A may be packed in a cartridge container that can be vented, and the entire cartridge container may be replaced. By doing so, the replacement work of the solid adsorbent A is facilitated.
上述した第１及び第２実施形態では、固体吸着剤Ａを単独で用いたが、固体吸着剤Ａと触媒との混合物を用いてもよい。こうすれば、未処理ガスに有機ハロゲン化合物（例えばトリクロロエチレンなど）が含まれる場合、その有機ハロゲン化合物が触媒によってハロゲン化水素やハロゲンガスなどに分解すると同時又は分解後に固体吸着剤Ａに吸着されるため、未処理ガスを効率よく浄化することができる。ここで、触媒は、未処理ガスに含まれる有機ハロゲン化合物の種類によって適宜選択すればよいが、例えば酸化鉄、活性アルミナ、酸化マンガンなどが挙げられる。 In the first and second embodiments described above, the solid adsorbent A is used alone, but a mixture of the solid adsorbent A and a catalyst may be used. In this way, when the untreated gas contains an organic halogen compound (for example, trichloroethylene), the organic halogen compound is adsorbed on the solid adsorbent A simultaneously or after decomposition when the organic halogen compound is decomposed into hydrogen halide or halogen gas by the catalyst. Therefore, the untreated gas can be purified efficiently. Here, the catalyst may be appropriately selected depending on the type of the organic halogen compound contained in the untreated gas, and examples thereof include iron oxide, activated alumina, and manganese oxide.
上述した第１及び第２実施形態では、ガスの流れをスライドバルブ１１０により順方向状態から逆方向状態に切り替えるときには、通気管８１に溜まった未処理ガスがそのままガス排出管７３から排出されることになり、逆方向状態から順方向状態に切り替えるときには、通気管８３に溜まった未処理ガスがそのままガス排出管７３に排出されることになる。このため、例えば図７に示すように、ガス供給管７１にバルブ７８を介して無害なガス（例えば空気など）を供給可能な構成としておき、スライドバルブ１１０を切り替える直前にそのバルブ７８を開いて未処理ガスを無害なガスで十分希釈し、その後、そのバルブ７８を閉めてスライドバルブ１１０を切り替えるのが好ましい。こうすれば、ハロゲン成分及び／又は硫黄成分を高濃度に含む未処理ガスがそのまま放出されるのを防止することができる。あるいは、ガス供給管７１とガス排出管７３との間にバルブの付いた連通管を取り付けると共に、ガス排出管７３のうち連通管の取付位置より下流側に別のバルブを取り付けた構成としておき、通常は連通管を閉鎖すると共にガス排出管７３を開放し、スライドバルブ１１０を切り替えた直後の所定期間は連通管を開放すると共にガス排出管７３を閉鎖してもよい。こうすれば、未処理ガスがそのままガス排出管７３に戻ってきたとしても、連通管を介してその未処理ガスを再びガス供給管７１に戻すことができる。 In the first and second embodiments described above, when the gas flow is switched from the forward direction state to the reverse direction state by the slide valve 110, the untreated gas accumulated in the vent pipe 81 is directly discharged from the gas discharge pipe 73. Thus, when switching from the reverse direction state to the forward direction state, the untreated gas accumulated in the vent pipe 83 is directly discharged to the gas discharge pipe 73. For this reason, for example, as shown in FIG. 7, the gas supply pipe 71 is configured to be able to supply harmless gas (for example, air) via the valve 78, and the valve 78 is opened immediately before switching the slide valve 110. It is preferable to dilute the untreated gas sufficiently with a harmless gas, and then close the valve 78 to switch the slide valve 110. In this way, it is possible to prevent the untreated gas containing the halogen component and / or the sulfur component at a high concentration from being released as it is. Alternatively, a communication pipe with a valve is attached between the gas supply pipe 71 and the gas discharge pipe 73, and another valve is attached to the gas discharge pipe 73 downstream from the attachment position of the communication pipe. Normally, the communication pipe may be closed and the gas discharge pipe 73 may be opened, and the communication pipe may be opened and the gas discharge pipe 73 may be closed for a predetermined period immediately after the slide valve 110 is switched. In this way, even if the untreated gas returns to the gas discharge pipe 73 as it is, the untreated gas can be returned to the gas supply pipe 71 again through the communication pipe.
上述した第２実施形態では、図３及び図４に示すように第１及び第２ガス通過口２２４，２２８をいずれも左側に設けたが、片方のガス通過口を右側、残りのガス通過口を左側に設けてもよい。例えば、第１ガス通過口２２４を右側、第２ガス通過口２２８を左側に設けてもよい。 In the second embodiment described above, the first and second gas passage ports 224 and 228 are both provided on the left side as shown in FIGS. 3 and 4, but one gas passage port is on the right side and the remaining gas passage ports are provided. May be provided on the left side. For example, the first gas passage port 224 may be provided on the right side and the second gas passage port 228 may be provided on the left side.
上述した第１及び第２実施形態では、ヒータ３８，２３８による反応室２２，２２２内の暖機温度は、ハロゲン成分及び／又は硫黄成分と固体吸着剤との組み合わせに応じて適宜適切な温度に設定すればよいとしたが、その一例を表１に示す。表１において、「Ｃａ系吸着材」としては、酸化カルシウムや水酸化カルシウム、カルシウムフェライトなどが挙げられ、「Ｎａ系吸着材」としては、酸化ナトリウムや炭酸ナトリウム、炭酸水素ナトリウム、アルミン酸ナトリウムなどが挙げられる。また、触媒としては、酸化鉄や活性アルミナ、酸化アルミニウム＋酸化ケイ素、酸化マンガンなどが挙げられる。 In the first and second embodiments described above, the warm-up temperature in the reaction chambers 22 and 222 by the heaters 38 and 238 is appropriately set according to the combination of the halogen component and / or sulfur component and the solid adsorbent. An example is shown in Table 1. In Table 1, examples of the “Ca-based adsorbent” include calcium oxide, calcium hydroxide, and calcium ferrite, and examples of the “Na-based adsorbent” include sodium oxide, sodium carbonate, sodium bicarbonate, and sodium aluminate. Is mentioned. Examples of the catalyst include iron oxide, activated alumina, aluminum oxide + silicon oxide, and manganese oxide.
１０，２１０ ガス処理システム、２０，２２０ 化学吸着装置、２２，２２２ 反応室、２４，２２４ 第１ガス通過口、２６，３０，２２６，２３０ 羽板、２８，２２８ 第２ガス通過口、３２，２３２ ホッパ、３４，２３４ 吸着剤排出口、３６，２３６ スクリューコンベヤ、３８，２３８ ヒータ、７１ ガス供給管、７３ ガス排出管、７４，７５ 導入管、７４ａ〜７７ａ 開閉バルブ、７６，７７ 導出管、７８ バルブ、８１，８３ 通気管、１１０ スライドバルブ、１２０ ハウジング、１２０ａ ベース面支持体、１２０ｂ 対向面支持体、１２１〜１２４ 第１〜第４接続口、１２５ 窪み、１２７，１２８ 突堤、１３０ ベース面部材、１３１ 第１長孔、１３２ 第２長孔、１３５，１３６，１４５，１４６ Ｖリング、１４０ 対向面部材、１４３ 第３長孔、１４４ 第４長孔、１６０ スライド板、１６１〜１６３ 第１〜第３貫通孔、２３３ 床、Ａ 固体吸着剤。 10,210 Gas treatment system, 20,220 Chemical adsorption device, 22,222 Reaction chamber, 24,224 First gas passage port, 26, 30, 226, 230 Blades, 28,228 Second gas passage port, 32, 232 Hopper, 34, 234 Adsorbent discharge port, 36, 236 Screw conveyor, 38, 238 Heater, 71 Gas supply pipe, 73 Gas discharge pipe, 74, 75 Inlet pipe, 74a-77a Open / close valve, 76, 77 Lead pipe 78 Valve, 81, 83 Vent pipe, 110 Slide valve, 120 Housing, 120a Base surface support, 120b Opposing surface support, 121-124 First to fourth connection ports, 125 depressions, 127, 128 jetty, 130 Base surface Member, 131 first slot, 132 second slot, 135, 136, 145, 146 V-ring, 40 facing surface member, 143 a third slot, 144 a fourth slot, 160 slide plate, 161 to 163 first to third through-hole, 233 bed, A solid adsorbent.
Claims (7)
前記第１ガス通過口に未処理ガスを供給し前記反応室を通過した処理済みガスを前記第２ガス通過口から排出する順方向状態か、前記第２ガス通過口に未処理ガスを供給し前記反応室を通過した処理済みガスを前記第１ガス通過口から排出する逆方向状態かを切り替える切替器と、
を備えたガス処理システム。 A gas containing a halogen compound and / or a sulfur compound has a reaction chamber filled with a solid adsorbent capable of adsorbing the halogen component and / or sulfur component by a chemical reaction, and the first and second gases pass through the reaction chamber. A chemical adsorption device provided with a mouth;
Supplying untreated gas to the first gas passing port and discharging the treated gas passing through the reaction chamber from the second gas passing port, or supplying untreated gas to the second gas passing port A switch that switches between the reverse state in which the treated gas that has passed through the reaction chamber is discharged from the first gas passage port;
Gas treatment system with
請求項１に記載のガス処理システム。 The chemical adsorption apparatus includes a supply unit capable of supplying a solid adsorbent to the reaction chamber, and a discharge unit capable of discharging the solid adsorbent from the reaction chamber, and is supplied from the supply unit to the reaction chamber. The solid adsorbent is configured to move in a direction intersecting with an imaginary line connecting the two gas passage ports of the reaction chamber and be discharged from the discharge portion.
The gas processing system according to claim 1.
請求項１又は２に記載のガス処理システム。 In the chemical adsorption apparatus, a catalyst that decomposes an organic halogen compound in an untreated gas to generate hydrogen halide and / or a halogen gas is used by mixing with a solid adsorbent.
The gas processing system according to claim 1 or 2.
請求項１〜３のいずれか１項に記載のガス処理システム。 The chemical adsorption device has a heat source capable of heating the reaction chamber.
The gas processing system of any one of Claims 1-3.
前記化学吸着装置に未処理ガスを供給する未処理ガス供給経路には、バルブを介して希釈ガス導入管から希釈ガスが導入可能となっている、
ガス処理システム。 The gas treatment system according to any one of claims 1 to 4,
In the untreated gas supply path for supplying the untreated gas to the chemical adsorption device, a dilution gas can be introduced from a dilution gas introduction pipe through a valve.
Gas processing system.
前記化学吸着装置に未処理ガスを供給する未処理ガス供給経路と前記化学吸着装置から処理済みガスを排出する処理済みガス排出経路との間にバルブ付きの連通管が取り付けられると共に、該処理済みガス排出経路のうち前記連通管の取付位置より下流側に別のバルブが取り付けられている、
ガス処理システム。 A gas processing system according to any one of claims 1 to 5,
A communication pipe with a valve is attached between the untreated gas supply path for supplying untreated gas to the chemisorber and the treated gas discharge path for discharging treated gas from the chemisorber, and the treated Another valve is attached to the downstream side of the attachment position of the communication pipe in the gas discharge path,
Gas processing system.
ガスが通過可能な第１及び第２長孔が所定方向に並んで設けられたベース面部材と、
前記ベース面部材と対向し、ガスが通過可能な第３及び第４長孔が前記所定方向と交差する方向に並び且ついずれも前記第１及び第２長孔の両方と重なり合うように設けられた対向面部材と、
前記ベース面部材と前記対向面部材との間に摺動可能に配置され、第１姿勢に位置決めされたときには前記第１長孔と前記第３長孔との連通及び前記第２長孔と前記第４長孔との連通を許容し前記第１長孔と前記第４長孔との連通及び前記第２長孔と前記第３長孔との連通を遮断し、第２姿勢に位置決めされたときには前記第１長孔と前記第４長孔との連通及び前記第２長孔と前記第３長孔との連通を許容し前記第１長孔と前記第３長孔との連通及び前記第２長孔と前記第４長孔との連通を遮断するように複数の貫通孔が形成された制御部材と、
前記ベース面部材及び前記対向面部材を取り囲み、前記第１長孔に接続され未処理ガスが供給されるガス供給口、前記第２長孔に接続され処理済みガスを排出するガス排出口、前記第３長孔と前記化学吸着装置の第１ガス通過口とを繋ぐ通気管及び前記第４長孔と前記化学吸着装置の第２ガス通過口とを繋ぐ通気管を有するハウジング部材と、
を備えた摺動式切替バルブである、
請求項１〜６のいずれか１項に記載のガス処理システム。 The switch is
A base surface member in which first and second elongated holes through which gas can pass are provided in a predetermined direction;
Opposed to the base surface member, the third and fourth long holes through which gas can pass are arranged in a direction intersecting the predetermined direction, and both are provided so as to overlap both the first and second long holes. An opposing surface member;
When the base surface member and the facing surface member are slidably disposed and positioned in the first posture, the first long hole and the third long hole communicate with each other, and the second long hole and the Communication with the fourth elongated hole is allowed, communication between the first elongated hole and the fourth elongated hole, and communication between the second elongated hole and the third elongated hole are blocked, and the second elongated hole is positioned in the second posture. Sometimes communication between the first long hole and the fourth long hole and communication between the second long hole and the third long hole is allowed, and communication between the first long hole and the third long hole is allowed. A control member in which a plurality of through holes are formed so as to block communication between the two long holes and the fourth long hole;
A gas supply port that surrounds the base surface member and the facing surface member and is connected to the first long hole and is supplied with untreated gas; a gas discharge port that is connected to the second long hole and discharges the treated gas; A housing member having a vent pipe connecting the third long hole and the first gas passage port of the chemical adsorption device and a vent pipe connecting the fourth long hole and the second gas passage port of the chemical adsorption device;
A sliding switching valve with
The gas processing system of any one of Claims 1-6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009013001A JP5285448B2 (en) | 2009-01-23 | 2009-01-23 | Gas treatment system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009013001A JP5285448B2 (en) | 2009-01-23 | 2009-01-23 | Gas treatment system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010167377A true JP2010167377A (en) | 2010-08-05 |
| JP5285448B2 JP5285448B2 (en) | 2013-09-11 |
Family
ID=42700012
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009013001A Expired - Fee Related JP5285448B2 (en) | 2009-01-23 | 2009-01-23 | Gas treatment system |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5285448B2 (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5010548B1 (en) * | 1970-07-31 | 1975-04-22 | ||
| JPS59173117A (en) * | 1983-03-24 | 1984-10-01 | Sumitomo Heavy Ind Ltd | Desulfurizing method of waste gas |
| JPH04277005A (en) * | 1991-03-01 | 1992-10-02 | Sumitomo Heavy Ind Ltd | Exhaust gas treatment apparatus of urban garbage incinerator |
| JPH05192526A (en) * | 1992-01-21 | 1993-08-03 | Mitsubishi Heavy Ind Ltd | Pressure swing type gas separator |
| JPH0910554A (en) * | 1995-06-30 | 1997-01-14 | Toshiba Corp | Treatment of substance containing halogenated hydrocarbon, treatment agent and treatment device |
| JP2006272337A (en) * | 2006-07-19 | 2006-10-12 | Electric Power Dev Co Ltd | Method for operating dry waste gas treatment apparatus |
| JP2007000822A (en) * | 2005-06-27 | 2007-01-11 | Chubu Electric Power Co Inc | Method for processing fluid organic compound |
| JP2010104940A (en) * | 2008-10-31 | 2010-05-13 | Chubu Electric Power Co Inc | Gas treatment system |
-
2009
- 2009-01-23 JP JP2009013001A patent/JP5285448B2/en not_active Expired - Fee Related
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5010548B1 (en) * | 1970-07-31 | 1975-04-22 | ||
| JPS59173117A (en) * | 1983-03-24 | 1984-10-01 | Sumitomo Heavy Ind Ltd | Desulfurizing method of waste gas |
| JPH04277005A (en) * | 1991-03-01 | 1992-10-02 | Sumitomo Heavy Ind Ltd | Exhaust gas treatment apparatus of urban garbage incinerator |
| JPH05192526A (en) * | 1992-01-21 | 1993-08-03 | Mitsubishi Heavy Ind Ltd | Pressure swing type gas separator |
| JPH0910554A (en) * | 1995-06-30 | 1997-01-14 | Toshiba Corp | Treatment of substance containing halogenated hydrocarbon, treatment agent and treatment device |
| JP2007000822A (en) * | 2005-06-27 | 2007-01-11 | Chubu Electric Power Co Inc | Method for processing fluid organic compound |
| JP2006272337A (en) * | 2006-07-19 | 2006-10-12 | Electric Power Dev Co Ltd | Method for operating dry waste gas treatment apparatus |
| JP2010104940A (en) * | 2008-10-31 | 2010-05-13 | Chubu Electric Power Co Inc | Gas treatment system |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5285448B2 (en) | 2013-09-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5130008B2 (en) | Processing equipment for volatile organic compounds | |
| JP2008055381A (en) | Pyrolysis furnace | |
| CN104815541B (en) | Method and system for going the removal of mercury from flue gas | |
| WO2019189886A1 (en) | Dust collection system and heat storage system | |
| JP2007000822A (en) | Method for processing fluid organic compound | |
| JP6623091B2 (en) | Ammonia storage and supply device and ammonia fuel tank | |
| JP5074352B2 (en) | Gas treatment system | |
| JP5285448B2 (en) | Gas treatment system | |
| KR101768882B1 (en) | Air purification apparatus | |
| CN209378713U (en) | A kind of volatide organic waste gas treating system for avoiding catalytic combustion reactor from overheating | |
| JPH11114374A (en) | Regenerating method of activated carbon used in activated carbon circulation bag filter | |
| JP2008126134A (en) | Dry treatment device and dry treatment measure of halogen-containing gas | |
| JP3592886B2 (en) | Decomposition method and reactant for decomposition of carbon fluorides | |
| JP2012021908A (en) | Mercury concentration measuring apparatus and mercury concentration measuring method | |
| JP5053050B2 (en) | Halogen-containing gas dry processing apparatus and dry processing method | |
| JP2004167403A (en) | Method and apparatus for dry treating acidic gas | |
| JP2006275421A (en) | Exhaust gas detoxifying device | |
| JP2009154091A (en) | Exhaust gas treatment apparatus, exhaust gas treating method, and thin film forming device | |
| JP2016121859A (en) | Harmful component heating and purifying device | |
| JP5355882B2 (en) | Reaction tube sealing device for decomposition treatment device and method of using reaction tube sealing device for decomposition treatment device | |
| JP2010240595A (en) | Waste gas detoxification apparatus | |
| JP2005152719A (en) | Activated carbon adsorber and its operation method | |
| JP2004261726A (en) | Decomposition treatment equipment and method for halogen-containing chemical substance | |
| JP2020089858A (en) | Air purifier | |
| KR100410893B1 (en) | Continuous Absorbing and Recycling Apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20111209 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120629 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120724 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120920 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130528 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130531 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 5285448 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |