JP2010166096A - Semiconductor laser apparatus and optical apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor laser apparatus including a plurality of semiconductor laser devices having respectively different oscillation wavelengths and capable of driving a semiconductor laser device with a short wavelength by using a power supply circuit which generates a low voltage, and to provide an optical apparatus including the semiconductor laser apparatus. <P>SOLUTION: The semiconductor laser apparatus 500 includes a first semiconductor laser device 11 for emitting a blue-violet laser beam, a second semiconductor laser device 12 for emitting a red laser beam and a conductive package body 19. The first semiconductor laser device 11 has a p-side pad electrode and an n-side electrode. The p-side pad electrode and the n-side electrode of the first semiconductor laser device 11 are electrically isolated from the package body 19. The p-side pad electrode of the first semiconductor laser device 11 is connected with a drive circuit 501 for generating a positive potential, and the n-side electrode of the first semiconductor laser device 11 is connected with a DC power supply 502 for generating a negative potential. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a semiconductor laser device and an optical device provided with semiconductor laser elements having different wavelengths.

  In recent years, as the performance of personal computers and multimedia devices has increased, the amount of information to be processed has increased remarkably. As the amount of information increases, an optical recording medium and a driving device for the same have been developed to cope with higher speed and larger capacity of information processing.

  Specific examples of the optical recording medium include a compact disc (hereinafter referred to as a CD) and a digital multipurpose disc (hereinafter referred to as a DVD). Specific examples of driving devices for reproducing and recording these optical recording media include a semiconductor laser device for CD and a semiconductor laser device for DVD. The semiconductor laser device for CD can emit infrared laser light (wavelength of about 790 nm) used when reproducing or recording a CD, and the semiconductor laser device for DVD is used when reproducing or recording a DVD. The red laser light (wavelength around 658 nm) used in the above can be emitted.

  As a drive device for an optical recording medium, there is a semiconductor laser device capable of reproducing or recording a CD and a DVD. This semiconductor laser device can emit infrared laser light for CD and red laser light for DVD.

  When this semiconductor laser device is used, the number of components can be reduced as compared with the case where a semiconductor laser device for CD and a semiconductor laser device for DVD are used together. Simplification can be achieved.

  On the other hand, semiconductor laser elements for next-generation DVDs that emit blue-violet laser light (wavelength around 400 nm) with a short wavelength (oscillation wavelength) have been developed to improve recording density in optical disc systems. In addition, a semiconductor laser device equipped with a semiconductor laser element that emits the blue-violet laser light has been developed (see Patent Document 1).

  Hereinafter, a semiconductor laser element that emits blue-violet laser light is called a blue-violet semiconductor laser element, a semiconductor laser element that emits infrared laser light is called an infrared semiconductor laser element, and a semiconductor laser element that emits red laser light is called This is called a red semiconductor laser element.

  The semiconductor laser device described in Japanese Patent Application Laid-Open No. 2001-230502 will be described below. FIG. 29 is a schematic diagram showing a semiconductor laser device described in Japanese Patent Laid-Open No. 2001-230502.

  As shown in FIG. 29, a blue-violet semiconductor laser device 901 is bonded to a support base 903a integrated with a package body 903 through a fusion layer 905. The blue-violet semiconductor laser element 901 is mechanically and electrically connected to the support base 903a.

  An infrared semiconductor laser element 902a and a red semiconductor laser element 902b are bonded to the electrodes 901a and 901b of the blue-violet semiconductor laser element 901 through fusion layers 906 and 907, respectively.

  The infrared semiconductor laser element 902a and the red semiconductor laser element 902b constitute an integrated semiconductor laser element 902 that is monolithically integrated on the same substrate. In this case, in order to enable independent driving of either the infrared semiconductor laser element 902a or the red semiconductor laser element 902b, the electrode 901a to which the infrared semiconductor laser element 902a is connected is blue-violet with the insulating layer 904 interposed therebetween. It is formed on the semiconductor laser element 901. The power supply pins 909a to 909c are formed so as to be insulated from the package body 903 by insulating rings 908a to 908c. The electrode 902c is formed on the upper surface of the integrated semiconductor laser element 902.

  The electrodes 901a, 901b, and 902c are connected to power supply pins 909a to 909c by wires 910a to 910c, respectively. The support base 903a is supplied with power from a power supply pin 903b connected to the package body 903.

Thereby, any one of infrared laser light, red laser light, and blue-violet laser light can be selected and emitted from the semiconductor laser device.
JP 2001-230502 A

  However, the blue-violet semiconductor laser element 901 that emits blue-violet laser light having a short wavelength is compared with the infrared semiconductor laser element 902a that emits long-wavelength infrared laser light or the red semiconductor laser element 902b that emits red laser light. The oscillation start voltage is high. This high oscillation start voltage is attributed to the constituent material of the blue-violet semiconductor laser device 901.

  30 is a circuit diagram of the semiconductor laser device of FIG.

  As shown in FIG. 30, in order to drive the blue-violet semiconductor laser device 901 having a high oscillation start voltage, a high voltage is applied to the other power supply pin 909b with respect to the package body 903 that is generally grounded. There is a need. Therefore, in the semiconductor laser device described in Japanese Patent Laid-Open No. 2001-230502, a drive circuit that is available at a relatively low cost and that has been used for driving the infrared semiconductor laser element 902a and the red semiconductor laser element 902b can be used. First, it is necessary to use a new drive circuit that supports high voltage.

  An object of the present invention is to provide a semiconductor laser device and an optical device that include a plurality of semiconductor laser elements having different oscillation wavelengths and that can also drive a semiconductor laser element having a short wavelength by using a power supply circuit that generates a low voltage. It is to be.

  Another object of the present invention is to provide a semiconductor laser device including a plurality of semiconductor laser elements having different oscillation start voltages and capable of driving a semiconductor laser element having a high oscillation start voltage using a power supply circuit that generates a low voltage. And providing an optical device.

  A semiconductor laser device according to a first aspect of the present invention includes a first semiconductor laser element that has one electrode and the other electrode and emits light of the first wavelength, and has one electrode and the other electrode, and has a first wavelength. A second semiconductor laser element that emits light having a longer second wavelength, and a conductive package that houses the first and second semiconductor laser elements, and one electrode of the first semiconductor laser element and The other electrode is insulated from the package.

  In the semiconductor laser device according to the first aspect of the present invention, the first semiconductor laser element that emits light of the first wavelength and the second light that emits light of the second wavelength longer than the first semiconductor laser element A semiconductor laser element; and a conductive package for housing the first and second semiconductor laser elements. Each of the first and second semiconductor laser elements has one electrode and the other electrode. One electrode and the other electrode of the first semiconductor laser element are insulated from the package.

  Here, the first semiconductor laser element that emits light with a short wavelength has a higher oscillation start voltage than the second semiconductor laser element that emits light with a long wavelength. In this case, a first power supply circuit that generates a positive potential is connected to one electrode of the first semiconductor laser element, and a first power supply circuit that generates a negative potential is connected to the other electrode of the first semiconductor laser element. A voltage higher than the oscillation start voltage of the semiconductor laser element can be applied to the first semiconductor laser element. Thus, in a semiconductor laser device including a plurality of semiconductor laser elements having different oscillation wavelengths, the first semiconductor laser element having a short wavelength can be driven using a power supply circuit that generates a low voltage.

  In addition, since the first semiconductor laser element is insulated from the package, the parasitic capacitance caused by the package is reduced, and the first semiconductor laser element can be operated at high speed.

  One electrode of the second semiconductor laser element may be electrically connected to the package.

  In this case, since one electrode of the second semiconductor laser element is electrically connected to the package, it is not necessary to connect a wiring for grounding the one electrode of the second semiconductor laser element.

  The first semiconductor laser element may be made of a material including a nitride semiconductor. In this case, the first semiconductor laser element made of a material containing a nitride semiconductor can emit blue-violet laser light having a shorter wavelength than the light of the second wavelength. As a result, high density and large capacity in the optical disc system can be realized by blue-violet laser light having a minute spot diameter.

  The first semiconductor laser element may be arranged at the center of the package rather than the second semiconductor laser element.

  In this case, by positioning the center portion of the package at the center portion of the lens, the light having the first wavelength emitted from the first semiconductor laser element having an oscillation wavelength shorter than that of the second semiconductor laser element is obtained. And is focused on the object. As a result, the influence of the aberration (mainly spherical aberration) caused by the lens is reduced, and a minute spot can be condensed.

  An optical device according to a second invention includes a semiconductor laser device, a first power source, and a second power source. The semiconductor laser device has one electrode and the other electrode, and emits light of the first wavelength. A first semiconductor laser element that emits light, a second semiconductor laser element that has one electrode and the other electrode, and emits light having a second wavelength longer than the first wavelength, and the first and second semiconductors A conductive package for housing the laser element, one electrode and the other electrode of the first semiconductor laser element are insulated from the package, the second semiconductor laser element is driven by the first power source, and the first power source Thus, a unipolar potential is applied to the other electrode of the first semiconductor laser device, and a unipolar potential is applied to the one electrode of the first semiconductor laser device from the second power source.

  An optical device according to a second invention includes a semiconductor laser device, a first power source, and a second power source. Here, the first semiconductor laser element emits light having a first wavelength shorter than that of the second semiconductor laser element. The second semiconductor laser element is driven by the first power source. The first power supply applies a unipolar potential to the other electrode of the first semiconductor laser element, and the second power supply applies a potential of the opposite polarity to the one electrode of the first semiconductor laser element.

  Here, the first semiconductor laser element that emits light having a short first wavelength has a higher oscillation start voltage than the second semiconductor laser element that emits light having a long second wavelength. In this case, a voltage higher than the oscillation start voltage of the second semiconductor laser element is applied from the first power source to the second semiconductor laser element. In addition, a unipolar potential is applied from the first power source to the other electrode of the first semiconductor laser element, and a reverse polarity potential is applied from the second power source to the one electrode of the first semiconductor laser element. As a result, a voltage higher than the oscillation start voltage of the first semiconductor laser element is applied to the first semiconductor laser element.

  Thereby, even when the optical device includes a semiconductor laser device including a plurality of semiconductor laser elements having different oscillation wavelengths, the first semiconductor laser element having a short wavelength is driven using a power supply circuit that generates a low voltage. be able to.

  The first semiconductor laser element may have a first oscillation start voltage, and the second semiconductor laser element may have a second oscillation start voltage lower than that of the first semiconductor laser element.

  In this case, a first power supply circuit that generates a positive potential is connected to one electrode of the first semiconductor laser element, and a first power supply circuit that generates a negative potential is connected to the other electrode of the first semiconductor laser element. A voltage higher than the first oscillation start voltage can be applied to the semiconductor laser element. Further, a voltage higher than the second oscillation start voltage can be applied to the second semiconductor laser by connecting a power supply circuit that generates a positive potential to the second semiconductor laser element.

  Thus, even when the optical device includes a semiconductor laser device including a plurality of semiconductor laser elements having different oscillation start voltages, the first semiconductor laser element having a short wavelength is driven using a power supply circuit that generates a low voltage. can do.

  In addition, since the first semiconductor laser element is insulated from the package, the parasitic capacitance caused by the package is reduced, and the first semiconductor laser element can be operated at high speed.

  One electrode of the second semiconductor laser element may be electrically connected to the package.

  In this case, since one electrode of the second semiconductor laser element is electrically connected to the package, it is not necessary to connect a wiring for grounding the one electrode of the second semiconductor laser element.

  The first semiconductor laser element may be made of a material including a nitride semiconductor. In this case, the first semiconductor laser element made of a material containing a nitride semiconductor can emit blue-violet laser light having a shorter wavelength than the light of the second wavelength. As a result, high density and large capacity in the optical disc system can be realized by blue-violet laser light having a minute spot diameter.

  An optical device according to a third aspect of the present invention includes a semiconductor laser device, a first power source, and a second power source. The semiconductor laser device has one electrode and the other electrode, and has a first oscillation start voltage. A first semiconductor laser element, a second semiconductor laser element having one electrode and the other electrode and having a second oscillation start voltage lower than that of the first semiconductor laser element, and the first and second semiconductors A conductive package for housing the laser element, one electrode and the other electrode of the first semiconductor laser element are insulated from the package, the second semiconductor laser element is driven by the first power source, and the first power source Thus, a unipolar potential is applied to the other electrode of the first semiconductor laser device, and a unipolar potential is applied to the one electrode of the first semiconductor laser device from the second power source.

  An optical device according to a third aspect includes a semiconductor laser device, a first power source, and a second power source. Here, the first semiconductor laser element has a higher oscillation start voltage than the second semiconductor laser element. The second semiconductor laser element is driven by the first power source. The first power supply applies a unipolar potential to the other electrode of the first semiconductor laser element, and the second power supply applies a potential of the opposite polarity to the one electrode of the first semiconductor laser element.

  Here, the first semiconductor laser element that emits light having a short first wavelength has a higher oscillation start voltage than the second semiconductor laser element that emits light having a long second wavelength. In this case, a voltage higher than the oscillation start voltage is applied from the first power source to the second semiconductor laser element. In addition, a unipolar potential is applied from the first power source to the other electrode of the first semiconductor laser element, and a reverse polarity potential is applied from the second power source to the one electrode of the first semiconductor laser element. As a result, a voltage higher than the oscillation start voltage of the first semiconductor laser element is applied to the first semiconductor laser element.

  Thereby, even when the optical device includes a semiconductor laser device including a plurality of semiconductor laser elements having different oscillation wavelengths, the first semiconductor laser element having a short wavelength is driven using a power supply circuit that generates a low voltage. be able to.

  According to the present invention, even when a plurality of semiconductor laser elements having different oscillation wavelengths are provided, a semiconductor laser element that emits light of a short wavelength can be driven using a power supply circuit that generates a low voltage.

  Hereinafter, semiconductor laser devices and optical devices according to embodiments of the present invention will be described.

(First embodiment)
FIG. 1 is an external perspective view showing the semiconductor laser device according to the first embodiment.

  As shown in FIG. 1, the semiconductor laser device 500 includes a conductive package body 19, power supply pins 21 a to 21 c and 24, and a lid body 25.

  A plurality of semiconductor laser elements to be described later are accommodated in the package body 19. The semiconductor laser element housed in the package body 19 is enclosed by a lid body 25. The lid 25 is provided with an extraction window 25a. The extraction window 25a is made of a material that transmits laser light. The power supply pin 24 is mechanically and electrically connected to the package body 19 as will be described later.

  Next, details in the package body 19 will be described. Hereinafter, the direction in which the laser light from the semiconductor laser element is emitted will be described as the front.

  2 is a schematic front view showing a state in which the lid 25 of the semiconductor laser device 500 in FIG. 1 is removed, and FIG. 3 is a schematic top view showing a state in which the lid 25 of the semiconductor laser device 500 in FIG. 1 is removed. FIG.

  As shown in FIG. 2, a conductive fusion layer 18 is formed on a conductive support base 17 integrated with the package body 19. The conductive fusion layer 18 is made of AuSn (gold tin). A sub-substrate 15 made of an insulating material is formed on the conductive fusion layer 18. Metal layers 16 a and 16 b are formed on the sub-substrate 15. The metal layers 16a and 16b are electrically insulated by providing a gap 16c.

  The fusion layer 13 is formed on the metal layer 16a, and the fusion layer 14 is formed on the metal layer 16b. The fusion layers 13 and 14 are made of conductive AuSn (gold tin). The first semiconductor laser element 11 is bonded on the fusion layer 13, and the second semiconductor laser element 12 is bonded on the fusion layer 14.

Here, the first semiconductor laser element 11 has a laminated structure in the order of a p-side pad electrode (hereinafter referred to as a p-side pad electrode) 11b, an n-type GaN (gallium nitride) substrate 11a, and an n-side electrode 11c. . The p-side pad electrode 11b of the first semiconductor laser element 11 is electrically connected to the metal layer 16a. The first semiconductor laser element 11 in the first embodiment includes a GaN-based semiconductor layer formed on the n-type GaN substrate 11a and has a wavelength (oscillation wavelength) of about 400 nm. The GaN-based semiconductor layer will be described later.

  On the other hand, the second semiconductor laser element 12 has a laminated structure in the order of a p-side pad electrode (hereinafter referred to as a p-side pad electrode) 12b, an n-type GaAs (gallium arsenide) substrate 12a, and an n-side electrode 12c. The p-side pad electrode 12b is electrically connected to the metal layer 16b. The second semiconductor laser element 12 in the first embodiment includes an AlGaInP (aluminum gallium indium phosphide) -based semiconductor layer formed on the n-type GaAs substrate 12a, and has a wavelength (oscillation wavelength) of about 660 nm. Have. The AlGaInP semiconductor layer will be described later.

  The first semiconductor laser element 11 is provided so as to be located at the center of the take-out window 25a (see FIG. 1) of the lid body 25 than the second semiconductor laser element 12. Details of the arrangement of the first semiconductor laser element 11 will be described later.

  As shown in FIGS. 2 and 3, the metal layer 16a is electrically connected to the power supply pin 21b by a wire 22b. The power supply pin 21b is electrically insulated from the package body 19 by an insulating ring 20b. The metal layer 16b is electrically connected to the power supply pin 21c by the wire 22c. The power supply pin 21c is electrically insulated from the package body 19 by an insulating ring 20c.

  The n-side electrode 11c of the first semiconductor laser element 11 is electrically connected to the power feed pin 21a by a wire 22a. The power supply pin 21a is electrically insulated from the package body 19 by an insulating ring 20a. The n-side electrode 12 c of the second semiconductor laser element 12 is electrically connected to the support base 17 by a wire 23. Thereby, the n-side electrode 12 c of the second semiconductor laser element 12 has a structure capable of supplying power from the power supply pin 24 connected to the package body 19. The wires 22a to 22c and 23 are made of Au (gold).

  Next, FIG. 4 is a circuit diagram showing electrical wiring of the semiconductor laser device 500.

  As shown in FIG. 4, the p-side pad electrode 11 b and the n-side electrode 11 c of the first semiconductor laser element 11 are electrically insulated from the package body 19. The p-side pad electrode 11b of the first semiconductor laser element 11 is connected to the power supply pin 21b, and the n-side electrode 11c is connected to the power supply pin 21a.

  On the other hand, the p-side pad electrode 12b of the second semiconductor laser element 12 is electrically connected to the power supply pin 21c, and the n-side electrode 12c is electrically connected to the package body 19.

  Next, FIG. 5 is a circuit diagram showing electrical wiring of an optical device using the semiconductor laser device 500 of FIG.

  As shown in FIG. 5, the optical device includes a semiconductor laser device 500, a drive circuit 501, a DC power supply 502, and a switch 503.

  The drive circuit 501 in FIG. 5 includes a DC power supply (not shown) that generates a DC voltage V. This DC voltage V is higher than the oscillation start voltage of the second semiconductor laser element 12. The DC power supply 502 outputs a negative (reverse polarity) DC voltage -Va. The anode terminal 501 a of the drive circuit 501 is connected to the terminal 503 a of the switch 503. The terminal 503b of the switch 503 is connected to the power feed pin 21c of the semiconductor laser device 500, and the terminal 503c is connected to the power feed pin 21b of the semiconductor laser device 500.

  The cathode terminal 501b of the drive circuit 501 is connected to the node a. The node a is connected to the anode side of the DC power supply 502 and is connected to the power supply pin 24 and the package body 19 of the semiconductor laser device 500. Node a is grounded (0 V). The cathode side of the DC power supply 502 is connected to the power supply pin 21 a of the semiconductor laser device 500.

  When the switch 503 is switched to the terminal 503b, the DC voltage V is applied to the second semiconductor laser element 12 by the DC power supply built in the drive circuit 501. Thereby, red laser light can be emitted from the second semiconductor laser element 12.

  On the other hand, when the switch 503 is switched to the terminal 503c, the DC voltage V is applied to the p-side pad electrode 11b of the first semiconductor laser element 11 by the DC power supply built in the drive circuit 501, and the first semiconductor The negative DC voltage −Va of the DC power source 502 is applied to the n-side electrode 11 c of the laser element 11. As a result, the total voltage V + Va of the DC voltage of the drive circuit 501 and the DC voltage of the negative DC power supply 502 is applied to the first semiconductor laser element 11. Thereby, the first semiconductor laser element 11 can emit blue-violet laser light.

  For example, when the oscillation start voltage of the first semiconductor laser element 11 is 4 to 6 V and the oscillation start voltage of the second semiconductor laser element 12 is 2 to 2.5 V, the DC voltage V is set to 2 to 2.5 V. It is preferable to set the negative DC voltage −Va to −2 to −3V.

  Next, specific structures of the first semiconductor laser element 11 and the second semiconductor laser element 12 will be described. In the first embodiment, the first semiconductor laser element 11 is a semiconductor laser element that emits blue-violet laser light (hereinafter referred to as a blue-violet semiconductor laser element), and the second semiconductor laser element 12 is It is assumed that the semiconductor laser element emits red laser light (hereinafter referred to as a red semiconductor laser element).

  FIG. 6 is a schematic cross-sectional view for explaining details of the structure of the blue-violet semiconductor laser device 11. In FIG. 6, three directions orthogonal to each other as indicated by arrows X, Y, and Z are defined as an X direction, a Y direction, and a Z direction. The X direction and the Y direction are directions parallel to the pn junction surface of the blue-violet semiconductor laser element 11.

  In the blue-violet semiconductor laser device 11, an n-type GaN substrate 11a is formed on an n-side electrode 11c made of Ti / Pt / Au, and a GaN-based semiconductor layer having a stacked structure is formed on the n-type GaN substrate 11a. .

  As shown in FIG. 6A, an n-GaN layer 101, an n-AlGaN cladding layer 102, an n-GaN light guide layer 103, an MQW (multiple quantum) are formed on a n-type GaN substrate 11a as GaN-based semiconductor layers. Well) An active layer 104, an undoped AlGaN cap layer 105, an undoped GaN light guide layer 106, a p-AlGaN cladding layer 107, and an undoped GaInN contact layer 108 are formed in this order. These layers are formed by, for example, MOCVD (metal organic chemical vapor deposition).

  As shown in FIG. 6B, the MQW active layer 104 has a structure in which four undoped GaInN barrier layers 104a and three undoped GaInN well layers 104b are alternately stacked.

  As shown in FIG. 6A, for example, the Al composition of the n-AlGaN cladding layer 102 is 0.15 and the Ga composition is 0.85. The n-GaN layer 101, the n-AlGaN cladding layer 102, and the n-GaN light guide layer 103 are doped with Si.

  The undoped GaInN barrier layer 104a has a Ga composition of 0.95 and an In composition of 0.05. The undoped GaInN well layer 104b has a Ga composition of 0.90 and an In composition of 0.10. The p-AlGaN cap layer 105 has an Al composition of 0.30 and a Ga composition of 0.70.

  Further, the p-AlGaN cladding layer 107 has an Al composition of 0.15 and a Ga composition of 0.85. The p-AlGaN cladding layer 107 is doped with Mg. The undoped GaInN contact layer 108 has a Ga composition of 0.95 and an In composition of 0.05.

  In the p-AlGaN cladding layer 107, a striped ridge portion Ri extending in the X direction is formed. The ridge portion Ri of the p-AlGaN cladding layer 107 has a width of about 1.5 μm.

  The undoped GaInN contact layer 108 is formed on the upper surface of the ridge portion Ri of the p-AlGaN cladding layer 107.

An insulating film 109 made of SiO ₂ is formed on the upper surfaces of the p-AlGaN cladding layer 107 and the undoped GaInN contact layer 108, and the insulating film 109 formed on the undoped GaInN contact layer 108 is removed by etching. Then, a p-electrode 110 made of Pd / Pt / Au is formed on the undoped GaInN contact layer 108 exposed to the outside. Further, the p-side pad electrode 11b is formed by sputtering, vacuum vapor deposition, or electron beam vapor deposition so as to cover the upper surface of the p electrode 110.

  Thus, a GaN-based semiconductor layer having a laminated structure is formed on one surface side of the n-type GaN substrate 11a.

  In the blue-violet semiconductor laser device 11, a blue-violet light emitting point is formed at the position of the MQW active layer 104 below the ridge Ri.

  Next, FIG. 7 is a schematic sectional view for explaining the details of the structure of the red semiconductor laser device 12. In FIG. 7, as in FIG. 6, the X direction, the Y direction, and the Z direction are defined.

  In the present embodiment, the red semiconductor laser element 12 has an n-type GaAs substrate 12a formed on an n-side electrode 12c made of AuGe / Ni / Au, and an AlGaInP-based semiconductor layer formed on the n-type GaAs substrate 12a. . The n-type GaAs substrate 12a is doped with Si.

  As shown in FIG. 7A, an n-GaAs layer 201, an n-AlGaInP clad layer 202, an undoped AlGaInP light guide layer 203, an MQW (multiple layer) are formed on a n-type GaAs substrate 12a as semiconductor layers having a laminated structure. Quantum well) active layer 204, undoped AlGaInP light guide layer 205, p-AlGaInP first cladding layer 206, p-InGaP etching stop layer 207, p-AlGaInP second cladding layer 208, and p-GaInP contact layer 209 are formed in this order. The These layers are formed by, for example, MOCVD (metal organic chemical vapor deposition).

  As shown in FIG. 7B, the MQW active layer 204 has a structure in which two undoped AlGaInP barrier layers 204a and three undoped InGaP well layers 204b are alternately stacked.

  As shown in FIG. 7A, for example, the Al composition of the n-AlGaInP cladding layer 202 is 0.70, the Ga composition is 0.30, the In composition is 0.50, and the P composition is 0. .50. The n-GaAs layer 201 and the n-AlGaInP cladding layer 202 are doped with Si.

  The undoped AlGaInP light guide layer 203 has an Al composition of 0.50, a Ga composition of 0.50, an In composition of 0.50, and a P composition of 0.50.

  The undoped AlGaInP barrier layer 204a has an Al composition of 0.50, a Ga composition of 0.50, an In composition of 0.50, and a P composition of 0.50. The undoped InGaP well layer 204b has an In composition of 0.50 and a Ga composition of 0.50. The undoped AlGaInP light guide layer 205 has an Al composition of 0.50, a Ga composition of 0.50, an In composition of 0.50, and a P composition of 0.50.

  Furthermore, the Al composition of the p-AlGaInP first cladding layer 206 is 0.70, the Ga composition is 0.30, the In composition is 0.50, and the P composition is 0.50. The p-InGaP etching stop layer 207 has an In composition of 0.50 and a Ga composition of 0.50.

The composition of the AlGaInP-based material described above is such that when represented by the general formula (Al _a Ga _b ) _0.5 Inc _{c d} , a is the Al composition, b is the Ga composition, and c is the In composition. And d is the composition of P.

  The p-AlGaInP second cladding layer 208 has an Al composition of 0.70, a Ga composition of 0.30, an In composition of 0.50, and a P composition of 0.50. The p-contact layer 209 has a stacked structure of a p-GaInP layer and a p-GaAs layer. The p-GaInP has a Ga composition of 0.5 and an In composition of 0.5.

  The p-AlGaInP first cladding layer 206, the p-InGaP etching stop layer 207, the p-AlGaInP second cladding layer 208, and the p-contact layer 209, p-GaInP and p-GaAs are doped with Zn.

  In the above, the formation of the p-AlGaInP second cladding layer 208 on the p-InGaP etching stop layer 207 is performed only on a part (center portion) of the p-InGaP etching stop layer 207. Then, a p-contact layer 209 is formed on the upper surface of the p-AlGaInP second cladding layer 208.

  Thus, a striped ridge portion Ri extending in the X direction is formed by the p-AlGaInP second cladding layer 208 and the p-contact layer 209 in the AlGaInP-based semiconductor layer. The ridge Ri comprising the p-AlGaInP second cladding layer 208 and the p-contact layer 209 has a width of about 2.5 μm.

An insulating film 210 made of SiO ₂ is formed on the upper surface of the p-InGaP etching stop layer 207, the side surface of the p-AlGaInP second cladding layer 208, and the upper surface and side surfaces of the p-contact layer 209, and on the p-contact layer 209. The formed insulating film 210 is removed by etching. Then, a p-electrode 211 made of Cr / Au is formed on the p-contact layer 209 exposed to the outside. Further, the p-side pad electrode 12b is formed by a sputtering method, a vacuum evaporation method, or an electron beam evaporation method so as to cover the upper surface of the p electrode 211.

  Thus, an AlGaInP-based semiconductor layer having a laminated structure is formed on one surface side of the n-type GaAs substrate 12a.

  In the red semiconductor laser device 12, a red light emitting point is formed at the position of the MQW active layer 204 below the ridge portion Ri.

  Next, a method for reducing the influence of the aberration of the first semiconductor laser element 11 will be described.

  FIG. 8 is an explanatory diagram showing a state in which the semiconductor laser device 500 according to the first embodiment is used for a pickup for an optical disc system which is an example of an optical device.

  As shown in FIG. 8, the blue-violet laser light emitted from the first semiconductor laser element 11 and the red laser light emitted from the second semiconductor laser element 12 of the semiconductor laser device 500 are coupled to the coupling lens 402, the beam The light passes through the splitter 403 and the objective lens 404 and is collected by the optical disk 405 as the object.

  In this case, the blue-violet laser light emitted from the first semiconductor laser element 11 passes through almost the center of the coupling lens 402 and the objective lens 404. As a result, the influence of lens aberrations (mainly spherical aberration) can be minimized, so that the light utilization efficiency is increased and the blue-violet laser beam is focused on the optical disk 405 so as to have the minimum spot diameter. Is done. As a result, recording or reproduction of a high-density recording optical disk becomes possible.

  On the other hand, the red laser light emitted from the second semiconductor laser element 12 passes through the periphery of the coupling lens 402 and the objective lens 404. As a result, the lens is influenced by aberrations (mainly spherical aberration), but since the spot diameter is large, the influence of aberrations hardly appears.

  As described above, in the semiconductor laser device 500 according to the first embodiment, the drive circuit 501 that generates a positive potential is connected to the p-side pad electrode 11b of the first semiconductor laser element 11, and the first semiconductor laser device 500 is connected. A voltage higher than the oscillation start voltage of the first semiconductor laser element 11 is applied to the first semiconductor laser element 11 by connecting a DC power source 502 that generates a negative potential to the n-side electrode 11 c of the laser element 11. be able to. Accordingly, the first semiconductor laser element 11 and the second semiconductor laser element 12 having different oscillation wavelengths are switched using the switch 503, so that the drive circuit 501 that generates a low voltage can be driven.

  Further, since the first semiconductor laser element 11 is insulated from the package body 19, the parasitic capacitance caused by the package body 19 is reduced, and the first semiconductor laser element 11 can be operated at high speed. On the other hand, since the n-side electrode 12c of the second semiconductor laser element 12 is electrically connected to the package body 19, a wiring for grounding the n-side electrode 12c of the second semiconductor laser element 12 needs to be connected. There is no. Further, the first semiconductor laser element 11 made of a material containing a nitride semiconductor can emit blue-violet laser light having an oscillation wavelength shorter than that of the red laser light emitted from the second semiconductor laser element 12. Further, by positioning the central portion of the package body 19 at the central portions of the coupling lens 402, the beam splitter 403, and the objective lens 404, the first semiconductor laser element 11 having an oscillation wavelength shorter than that of the second semiconductor laser element 12 is used. The emitted blue-violet laser light passes through the central part of the coupling lens 402 and the objective lens 404 and is focused on the object. As a result, the influence of the aberration (mainly spherical aberration) caused by the coupling lens 402 and the objective lens 404 is reduced, and a minute spot can be condensed. As a result, high density and large capacity in the optical disc system can be realized by blue-violet laser light having a minute spot diameter.

  Further, in the laminated structure of the first semiconductor laser element 11 and the second semiconductor laser element 12, the MQW active layers 104 and 204 and the ridge portion Ri, which are heat generation sites, are p-side pads rather than the n-side electrodes 11c and 12c. It exists in the vicinity of the electrodes 11b and 12b. Therefore, by bonding the p-side pad electrodes 11b and 12b to the metal layers 16a and 16b on the sub-substrate 15, the heat from the heat generation site is transferred from the p-side pad electrodes 11b and 12b to the metal layer 16a having high thermal conductivity. 16b and the sub-substrate 15 can be efficiently radiated.

(Second Embodiment)
The semiconductor laser device and optical device according to the second embodiment will be described below. The semiconductor laser device according to the second embodiment is different from the semiconductor laser device according to the first embodiment in the following points.

  FIG. 9 is an external perspective view showing a semiconductor laser device according to the second embodiment.

  A semiconductor laser device 510 shown in FIG. 9 includes power supply pins 21b, 21c, and 24 instead of the power supply pins 21a to 21c and 24 of the semiconductor laser device 500 of FIG.

  Next, details in the package body 19 of the semiconductor laser device 510 according to the second embodiment will be described. Hereinafter, the direction in which the laser light from the semiconductor laser element is emitted will be described as the front.

  10 is a schematic front view showing a state in which the lid 25 of the semiconductor laser device 510 of FIG. 9 is removed, and FIG. 11 is a schematic top view showing a state in which the lid 25 of the semiconductor laser device 510 of FIG. 9 is removed. FIG.

  A metal layer 16 is formed on the sub-substrate 15 of the semiconductor laser device 510 shown in FIG. 10 instead of the metal layers 16a and 16b and the gap 16c of the semiconductor laser device 500 shown in FIG.

  Further, in the semiconductor laser device 510 shown in FIG. 10, the insulating rings 20 a to 20 c, the power supply pins 21 a to 21 c and 24, and the wires 22 a to 22 c and 23 of the semiconductor laser device 500 shown in FIG. 20c, power supply pins 21b, 21c, 24 and wires 22b, 22c, 23.

  As shown in FIGS. 10 and 11, in the semiconductor laser device 510 according to the second embodiment, the metal layer 16 is electrically connected to the power supply pin 21c by the wire 22c. The power supply pin 21c is electrically insulated from the package body 19 by an insulating ring 20c.

  The n-side electrode 11c of the first semiconductor laser element 11 is electrically connected to the power feed pin 21b by a wire 22b. The power supply pin 21b is electrically insulated from the package body 19 by an insulating ring 20b. The n-side electrode 12 c of the second semiconductor laser element 12 is electrically connected to the support base 17 by a wire 23. Thereby, the n-side electrode 12 c of the second semiconductor laser element 12 has a structure capable of supplying power from the power supply pin 24 connected to the package body 19. The wires 22b, 22c, and 23 are made of Au (gold). The structures of the first semiconductor laser element 11 and the second semiconductor laser element 12 are the same as the structures of the first semiconductor laser element 11 and the second semiconductor laser element 12 shown in FIGS.

  Next, FIG. 12 is a circuit diagram showing electrical wiring of the semiconductor laser device 510.

  As shown in FIG. 12, the p-side pad electrode 11 b of the first semiconductor laser element 11 and the p-side pad electrode 12 b of the second semiconductor laser element 12 are electrically connected by a metal layer 16. The metal layer 16 is connected to the power supply pin 21c. The n-side electrode 11 c of the first semiconductor laser element 11 is electrically insulated from the package body 19. The n-side electrode 11c of the first semiconductor laser element 11 is connected to the power feed pin 21b. The n-side electrode 12 c of the second semiconductor laser element 12 is electrically connected to the package body 19.

  Next, FIG. 13 is a circuit diagram showing electrical wiring of an optical device using the semiconductor laser device 510 of FIG.

  As shown in FIG. 13, the optical device includes a semiconductor laser device 510, a drive circuit 501, a DC power supply 502, and a switch 504.

  The drive circuit 501 in FIG. 13 includes a DC power source (not shown) that generates a DC voltage V. This DC voltage V is higher than the oscillation start voltage of the second semiconductor laser element 12. The DC power supply 502 outputs a negative (reverse polarity) DC voltage -Va. The anode terminal 501 a of the drive circuit 501 is connected to the power feed pin 21 c of the semiconductor laser device 510. The cathode terminal 501b of the drive circuit 501 is connected to the node b. The node b is connected to the terminal 504 a of the switch 504 and is connected to the power supply pin 24 and the package body 19 of the semiconductor laser device 510. The node b is grounded (0V).

  The anode side of the DC power supply 502 is connected to the terminal 504 b of the switch 504. The cathode side of the DC power supply 502 is connected to the power supply pin 21 b of the semiconductor laser device 510.

  When the switch 504 is turned off, a DC voltage V is applied to the second semiconductor laser element 12 by a DC power source built in the drive circuit 501. Thereby, the second semiconductor laser element 12 can emit red laser light.

  On the other hand, when the switch 504 is turned on, the DC voltage V is applied to the p-side pad electrode 11b of the first semiconductor laser element 11 by the DC power source built in the drive circuit 501, and the first semiconductor laser element The negative DC voltage -Va of the DC power supply 502 is applied to the 11 n-side electrode 11c. As a result, the total voltage V + Va of the DC voltage of the drive circuit 501 and the DC voltage of the negative DC power supply 502 is applied to the first semiconductor laser element 11. Thereby, the first semiconductor laser element 11 can emit blue-violet laser light.

  For example, when the oscillation start voltage of the first semiconductor laser element 11 is 4 to 6 V and the oscillation start voltage of the second semiconductor laser element 12 is 2 to 2.5 V, the DC voltage V is set to 2 to 2.5 V. It is preferable to set negative DC voltage −Va to −3 to −4V.

  In this case, the difference between the voltage supplied to the first semiconductor laser element 11 and the absolute value of the negative DC voltage −Va is a voltage at which current starts to flow through the second semiconductor laser element 12 (about 1.7 V). The first semiconductor laser element 11 can be driven within the following range. In this case, the second semiconductor laser element 12 does not emit laser light.

  As described above, in the semiconductor laser device 510 and the optical device according to the second embodiment, the number of power supply pins can be reduced as compared with the semiconductor laser device 500 according to the first embodiment.

  Further, the first semiconductor laser element 11 having a high oscillation start voltage can be switched and driven by the switch 504 using the drive circuit 501 that can drive the second semiconductor laser element 12 having a low oscillation start voltage.

(Third embodiment)
A semiconductor laser device and an optical device according to the third embodiment will be described below. The semiconductor laser device according to the third embodiment is different from the semiconductor laser device according to the first embodiment in the following points.

  FIG. 14 is an external perspective view showing a semiconductor laser device according to the third embodiment.

  A semiconductor laser device 520 shown in FIG. 14 includes power supply pins 21b, 21c, and 24 instead of the power supply pins 21a to 21c and 24 of the semiconductor laser device 500 of FIG.

  Next, details in the package body 19 of the semiconductor laser device 520 according to the third embodiment will be described. Hereinafter, the direction in which the laser light from the semiconductor laser element is emitted will be described as the front.

  15 is a schematic front view showing the semiconductor laser device 520 shown in FIG. 14 with the lid 25 removed, and FIG. 16 is a schematic top view showing the semiconductor laser device 520 shown in FIG. 14 with the lid 25 removed. FIG.

  In the semiconductor laser device 520 shown in FIG. 15, insulating rings 20 a to 20 c, power supply pins 21 a to 21 c and 24 and wires 22 a to 22 c and 23 in the semiconductor laser device 500 shown in FIG. Power supply pins 21b, 21c, 24 and wires 22b, 22c, 23, 26 are provided.

  As shown in FIGS. 15 and 16, in the semiconductor laser device 520 according to the third embodiment, the metal layer 16a is electrically connected to the power supply pin 21b by the wire 22b. The power supply pin 21b is electrically insulated from the package body 19 by an insulating ring 20b. The metal layer 16b is electrically connected to the power supply pin 21c by the wire 22c. The power supply pin 21c is electrically insulated from the package body 19 by an insulating ring 20c. The metal layer 16 b is electrically connected to the n-side electrode 11 c of the first semiconductor laser element 11 by a wire 26. The n-side electrode 12 c of the second semiconductor laser element 12 is electrically connected to the support base 17 by a wire 23. Thereby, the n-side electrode 12 c of the second semiconductor laser element 12 has a structure capable of supplying power from the power supply pin 24 connected to the package body 19. The wires 22b, 22c, 23, and 26 are made of Au (gold). The structures of the first semiconductor laser element 11 and the second semiconductor laser element 12 are the same as the structures of the first semiconductor laser element 11 and the second semiconductor laser element 12 shown in FIGS.

  Next, FIG. 17 is a circuit diagram showing electrical wiring of the semiconductor laser device 520.

  As shown in FIG. 17, the n-side electrode 11c of the first semiconductor laser element 11 and the p-side pad electrode 12b of the second semiconductor laser element 12 are electrically connected by a metal layer 16b. The metal layer 16b is connected to the power supply pin 21c.

  The p-side pad electrode 11 b and the n-side electrode 11 c of the first semiconductor laser element 11 are electrically insulated from the package body 19. The p-side pad electrode 11b of the first semiconductor laser element 11 is connected to the power supply pin 21b, and the n-side electrode 11c is connected to the power supply pin 21c.

  On the other hand, the p-side pad electrode 12b of the second semiconductor laser element 12 is electrically connected to the metal layer 16b, and the n-side electrode 12c is electrically connected to the package body 19.

  Next, FIG. 18 is a circuit diagram showing electrical wiring of an optical device using the semiconductor laser device 520 of FIG.

  As shown in FIG. 18, the optical device includes a semiconductor laser device 520, a drive circuit 501, a DC power supply 502, and switches 505 and 506.

  The drive circuit 501 in FIG. 18 incorporates a DC power supply (not shown) that generates a DC voltage V. This DC voltage V is higher than the oscillation start voltage of the second semiconductor laser element 12. The DC power supply 502 outputs a negative (reverse polarity) DC voltage -Va. The anode terminal 501a of the drive circuit 501 is connected to the node c. The node c is connected to the terminal 505a of the switch 505 and to the power supply pin 21b of the semiconductor laser device 520.

  The cathode terminal 501b of the drive circuit 501 is connected to the node d. The node d is connected to the terminal 506 b of the switch 506 and to the power supply pin 24 and the package body 19 of the semiconductor laser device 520. The node d is grounded (0V).

  The power supply pin 21 c of the semiconductor laser device 520 is connected to the terminal 505 b of the switch 505 and to the cathode side of the DC power supply 502. The anode side of the DC power supply 502 is connected to the terminal 506 a of the switch 506.

  When the switch 505 is turned on and the switch 506 is turned off, a DC voltage V is applied to the second semiconductor laser element 12 by a DC power source built in the drive circuit 501. Thereby, the second semiconductor laser element 12 can emit red laser light.

  On the other hand, when the switch 505 is turned off and the switch 506 is turned on, a DC voltage V is applied to the p-side pad electrode 11b of the first semiconductor laser element 11 by a DC power source built in the drive circuit 501, and The negative DC voltage −Va of the DC power source 502 is applied to the n-side electrode 11 c of the first semiconductor laser element 11. As a result, the total voltage V + Va of the DC voltage of the drive circuit 501 and the DC voltage of the negative DC power supply 502 is applied to the first semiconductor laser element 11. Thereby, the first semiconductor laser element 11 can emit blue-violet laser light.

  For example, when the oscillation start voltage of the first semiconductor laser element 11 is 4 to 6 V and the oscillation start voltage of the second semiconductor laser element 12 is 2 to 2.5 V, the DC voltage V is set to 2 to 2.5 V. It is preferable to set the negative DC voltage −Va to −2 to −3V.

  As described above, in the semiconductor laser device 520 according to the third embodiment, the second breakdown voltage does not exceed the reverse breakdown voltage of the second semiconductor laser element 12 when the first semiconductor laser element 11 is driven. A reverse polarity voltage is applied to the semiconductor laser element 12. Therefore, it is not necessary to adjust the voltage for the second semiconductor laser element 12 when the first semiconductor laser element 11 is driven, and the first semiconductor laser element 11 can be driven completely independently.

  Further, the semiconductor laser device 520 according to the third embodiment can reduce the number of power supply pins as compared with the semiconductor laser device 500 according to the first embodiment.

  Furthermore, the semiconductor laser device 520 according to the third embodiment uses the drive circuit 501 that can drive the second semiconductor laser element 12 with a low oscillation start voltage, and uses the first semiconductor laser element 11 with a high oscillation start voltage. Can be switched by switches 505 and 506.

(Fourth embodiment)
A semiconductor laser device and an optical device according to the fourth embodiment will be described below. The semiconductor laser device according to the fourth embodiment is different from the semiconductor laser device according to the first embodiment in the following points.

  FIG. 19 is an external perspective view showing a semiconductor laser device according to the fourth embodiment.

  A semiconductor laser device 530 shown in FIG. 19 is similar in appearance to the semiconductor laser device 500 (see FIG. 1) according to the first embodiment. However, the fourth embodiment is different in that an output control photodiode, which will be described later, is provided in the package body 19.

  Next, details in the package body 19 of the semiconductor laser device 530 according to the fourth embodiment will be described. Hereinafter, the direction in which the laser light from the semiconductor laser element is emitted will be described as the front.

  20 is a schematic front view showing the semiconductor laser device 530 of FIG. 19 with the lid 25 removed, and FIG. 21 is a schematic top view showing the semiconductor laser device 530 of FIG. 19 with the lid 25 removed. FIG.

  A semiconductor laser device 530 shown in FIG. 20 includes wires 22b, 22c, 23, 26, and 28 and an output control photodiode 27 instead of the wires 22a to 22c and 23 of the semiconductor laser device 500 shown in FIG. .

  As shown in FIGS. 20 and 21, in the semiconductor laser device 530 according to the fourth embodiment, the metal layer 16a is electrically connected to the power supply pin 21b by the wire 22b. The power supply pin 21b is electrically insulated from the package body 19 by an insulating ring 20b. The metal layer 16b is electrically connected to the power supply pin 21c by the wire 22c. The power supply pin 21c is electrically insulated from the package body 19 by an insulating ring 20c. The metal layer 16 b is electrically connected to the n-side electrode 11 c of the first semiconductor laser element 11 by a wire 26.

  The n-side electrode 12 c of the second semiconductor laser element 12 is electrically connected to the support base 17 by a wire 23. Thereby, the n-side electrode 12 c of the second semiconductor laser element 12 has a structure capable of supplying power from the power supply pin 24 connected to the package body 19.

  Further, the p-side electrode 27a of the photodiode 27 is electrically connected to the power supply pin 21a by a wire 28. The power supply pin 21a is electrically insulated from the package body 19 by an insulating ring 20a. On the other hand, the n-side electrode of the photodiode 27 is mechanically bonded to the package body 19 and electrically connected thereto. The wires 22b, 22c, 23, 26, and 28 are made of Au (gold). The structures of the first semiconductor laser element 11 and the second semiconductor laser element 12 are the same as the structures of the first semiconductor laser element 11 and the second semiconductor laser element 12 shown in FIGS.

  Next, FIG. 22 is a circuit diagram showing electrical wiring of the semiconductor laser device 530.

  The circuit of the semiconductor laser device 530 shown in FIG. 22 is obtained by further adding a photodiode 27 to the circuit of the semiconductor laser device 520 shown in FIG. Hereinafter, differences between the semiconductor laser device 530 of FIG. 22 and the semiconductor laser device 520 of FIG. 17 will be described.

  The p-side electrode 27a of the photodiode 27 of the semiconductor laser device 530 shown in FIG. 22 is connected to the power supply pin 21a. On the other hand, the n-side electrode of the photodiode 27 is connected to the package body 19.

  From the above, since the semiconductor laser device 530 according to the fourth embodiment includes the photodiode 27, blue light emitted from the rear end surfaces of the first semiconductor laser element 11 and the second semiconductor laser element 12 is used. By receiving the violet laser light and the red laser light, the outputs of the blue violet laser light and the red laser light emitted from the first semiconductor laser element 11 and the second semiconductor laser element 12 can be feedback controlled.

  Here, in general, the sensitivity of the photodiode decreases when the oscillation wavelength of the received laser beam is short. However, since the first semiconductor laser element 11 is provided in the central portion of the package main body 19, the blue-violet laser emitted from the first semiconductor laser element 11 efficiently to the photodiode 27 provided in the central portion of the package main body 19. Light can be irradiated.

  As a result, the light intensity of the photodiode 27 increases, so that the monitor current flowing through the photodiode 27 increases. As a result, the output control of the first semiconductor laser element 11 can be accurately performed by improving the control signal and the noise ratio.

(Fifth embodiment)
A semiconductor laser device and an optical device according to the fifth embodiment will be described below.

  FIG. 23 is an external perspective view showing a semiconductor laser device according to the fifth embodiment.

  A semiconductor laser device 540 shown in FIG. 23 includes a conductive package main body 19, power supply pins 21 a to 21 c and 24, and a lid body 25, similarly to the semiconductor laser device 500 of FIG. 1. In the semiconductor laser device 540 according to the fifth embodiment, the first semiconductor laser element 11 and the second semiconductor laser element 12 are further provided with a third semiconductor laser element.

  Next, details in the package body 19 will be described. Hereinafter, the direction in which the laser light from the semiconductor laser element is emitted will be described as the front.

  24 is a schematic front view showing the semiconductor laser device 540 of FIG. 23 with the lid 25 removed, and FIG. 25 is a schematic top view showing the semiconductor laser device 540 of FIG. 23 with the lid 25 removed. FIG. Hereinafter, differences from the semiconductor laser device 500 of the first embodiment will be described.

  As shown in FIG. 24, a conductive fusion layer 18 is formed on a conductive support base 17 integrated with the package body 19. The conductive fusion layer 18 is made of AuSn (gold tin). A sub-substrate 15 is formed on the conductive fusion layer 18. Metal layers 16 a, 16 b and 16 d are formed on the sub-substrate 15. A gap 16c is provided between the metal layers 16a and 16b, and a gap 16e is provided between the metal layers 16b and 16d to be electrically insulated.

  The fusion layer 13 is formed on the metal layer 16a, the fusion layer 14 is formed on the metal layer 16b, and the fusion layer 30 is formed on the metal layer 16d. The fusing layers 13, 14, and 30 are made of conductive AuSn (gold tin). The first semiconductor laser element 11 is adhered on the fusion layer 13, the second semiconductor laser element 12 is adhered on the fusion layer 14, and the third semiconductor laser element is adhered on the fusion layer 30. 29 is glued.

  Here, the first semiconductor laser element 11 is provided so as to be positioned at the center of the extraction window 25a (see FIG. 1) of the lid 25 more than the second semiconductor laser element 12 and the third semiconductor laser element 29. It is done.

  As shown in FIGS. 24 and 25, the metal layer 16a is electrically connected to the power supply pin 21a by the wire 22a. The power supply pin 21a is electrically insulated from the package body 19 by an insulating ring 20a. Further, the metal layer 16b is electrically connected to the power supply pin 21c by the wire 22c. The power supply pin 21c is electrically insulated from the package body 19 by an insulating ring 20c. The metal layer 16 b is electrically connected to the n-side electrode 11 c of the first semiconductor laser element 11 by a wire 26. The n-side electrode 12 c of the second semiconductor laser element 12 is electrically connected to the support base 17 by a wire 23.

  The n-side electrode 29 c of the third semiconductor laser element 29 is electrically connected to the support base 17 by a wire 31. The metal layer 16d is connected to the power supply pin 21b by a wire 22b. The power supply pin 21b is electrically insulated from the package body 19 by an insulating ring 20b. The wires 22a to 22c, 23, 26, and 31 are made of Au (gold).

  Here, the structure of the first semiconductor laser element 11 and the second semiconductor laser element 12 according to the fifth embodiment is the same as that of the first semiconductor laser element 11 and the second semiconductor shown in FIGS. The structure is the same as that of the laser element 12. The third semiconductor laser element 29 has a stacked structure of a p-side pad electrode (hereinafter referred to as a p-side pad electrode) 29b, an n-type GaAs (gallium arsenide) substrate 29a, and an n-side electrode 29c in this order. The p-side pad electrode 29b of the third semiconductor laser element 29 is electrically connected to the metal layer 16d. The third semiconductor laser element 29 in the fifth embodiment includes an AlGaAs-based semiconductor layer (described later) formed on the n-type GaAs substrate 29a, and has a wavelength (oscillation wavelength) of about 790 nm.

  Next, FIG. 26 is a circuit diagram showing electrical wiring of the semiconductor laser device 540.

  As shown in FIG. 26, the p-side pad electrode 11 b and the n-side electrode 11 c of the first semiconductor laser element 11 are electrically insulated from the package body 19. The p-side pad electrode 11b of the first semiconductor laser element 11 is connected to the power supply pin 21a, and the n-side electrode 11c is connected to the power supply pin 21c by wires 26 and 22c. The p-side pad electrode 12b of the second semiconductor laser element 12 is connected to the power supply pin 21c by a wire 22c, and the n-side electrode 12c of the second semiconductor laser element 12 is electrically connected to the package body 19. Yes.

  The p-side pad electrode 29b of the third semiconductor laser element 29 is connected to the power supply pin 21b by a wire 22b, and the n-side electrode 29c of the third semiconductor laser element 29 is electrically connected to the package body 19. ing.

  Next, FIG. 27 is a circuit diagram showing electrical wiring of an optical device using the semiconductor laser device 540 of FIG.

  As shown in FIG. 27, the optical device includes a semiconductor laser device 540, a drive circuit 501, a DC power supply 502, and switches 507 and 508.

  The drive circuit 501 in FIG. 27 includes a DC power supply (not shown) that generates a DC voltage V. This DC voltage V is higher than the oscillation start voltage of the second semiconductor laser element 12 and the oscillation start voltage of the third semiconductor laser element 29. The DC power supply 502 outputs a negative (reverse polarity) DC voltage -Va.

  The anode terminal 501a of the drive circuit 501 is connected to the node e. The node e is connected to the terminal 507a of the switch 507 and to the power feed pin 21a of the semiconductor laser device 540.

  The cathode terminal 501b of the drive circuit 501 is connected to the node f. The node f is connected to the terminal 508 b of the switch 508 and also connected to the power supply pin 24 of the semiconductor laser device 540. The node f is grounded (0 V).

  The power feed pin 21 b of the semiconductor laser device 540 is connected to the terminal 507 c of the switch 507.

  The power feed pin 21c of the semiconductor laser device 540 is connected to the node g. The node g is connected to the terminal 507b of the switch 507 and to the cathode side of the DC power supply 502. The anode side of the DC power supply 502 is connected to the terminal 508 a of the switch 508.

  For example, when the switch 507 is switched to the terminal 507c and the switch 508 is turned off, the DC voltage V is applied to the third semiconductor laser element 29 from the DC power supply built in the drive circuit 501. Thereby, the third semiconductor laser element 29 can emit infrared laser light.

  On the other hand, when the switch 507 is switched to the terminal 507b and the switch 508 is turned off, the DC voltage V is applied to the second semiconductor laser element 12 from the DC power source built in the drive circuit 501. Thereby, the second semiconductor laser element 12 can emit red laser light.

  Further, the switch 507 is switched to the terminal 507b and the switch 508 turns on the terminal 508a, so that the DC voltage V is supplied from the DC power supply built in the drive circuit 501 to the p-side pad electrode 11b of the first semiconductor laser element 11. Is applied to the n-side electrode 11c of the first semiconductor laser element 11, and a negative DC voltage -Va of the DC power supply 502 is applied thereto. As a result, the total voltage V + Va of the DC voltage of the drive circuit 501 and the DC voltage of the negative DC power supply 502 is applied to the first semiconductor laser element 11. Thereby, the first semiconductor laser element 11 can emit blue-violet laser light.

  Next, the structure of the third semiconductor laser element 29 will be described. The structures of the first semiconductor laser element 11 and the second semiconductor laser element 12 are the same as the structures of the first semiconductor laser element 11 and the second semiconductor laser element 12 shown in FIGS. . Hereinafter, a semiconductor laser element that emits infrared laser light is referred to as an infrared semiconductor laser element.

  FIG. 28 is a schematic cross-sectional view for explaining details of the structure of the infrared semiconductor laser device 29. In FIG. 28, the X direction, the Y direction, and the Z direction are defined as in FIGS.

  In the fifth embodiment, in the infrared semiconductor laser device 29, an n-type GaAs substrate 29a is formed on an n-side electrode 29c, and an AlGaAs-based semiconductor layer is formed on the n-type GaAs substrate 29a. The n-type GaAs substrate 29a is doped with Si.

  As shown in FIG. 28A, an n-GaAs layer 301, an n-AlGaAs clad layer 302, an undoped AlGaAs light guide layer 303, an MQW (multiple quantum well) are formed on an n-type GaAs substrate 29a as AlGaAs semiconductor layers. ) An active layer 304, an undoped AlGaAs light guide layer 305, a p-AlGaAs first cladding layer 306, a p-AlGaAs etching stop layer 307, a p-AlGaAs second cladding layer 308, and a p-GaAs contact layer 309 are sequentially formed. These layers are formed by, for example, MOCVD (metal organic chemical vapor deposition).

  As shown in FIG. 28B, the MQW active layer 304 has a structure in which two undoped AlGaAs barrier layers 304a and three undoped AlGaAs well layers 304b are alternately stacked.

  Here, for example, the Al composition of the n-AlGaAs cladding layer 302 is 0.45 and the Ga composition is 0.55. The n-GaAs layer 301 and the n-AlGaAs cladding layer 302 are doped with Si.

  The undoped AlGaAs light guide layer 303 has an Al composition of 0.35 and a Ga composition of 0.65. The undoped AlGaAs barrier layer 304a has an Al composition of 0.35 and a Ga composition of 0.65. The undoped AlGaAs well layer 304b has an Al composition of 0.10 and a Ga composition of 0.90. The undoped AlGaAs light guide layer 305 has an Al composition of 0.35 and a Ga composition of 0.65.

  Further, the Al composition of the p-AlGaAs first cladding layer 306 is 0.45, and the Ga composition is 0.55. The p-AlGaAs etching stop layer 307 has an Al composition of 0.70 and a Ga composition of 0.30.

  The p-AlGaAs second cladding layer 308 has an Al composition of 0.45 and a Ga composition of 0.55.

  The p-AlGaAs first cladding layer 306, the p-AlGaAs etching stop layer 307, the p-AlGaAs second cladding layer 308, and the p-GaAs contact layer 309 are doped with Zn.

  In the above, the formation of the p-AlGaAs second cladding layer 308 on the p-AlGaAs etching stop layer 307 is performed only on a part (center portion) of the p-AlGaAs etching stop layer 307. Then, a p-GaAs contact layer 309 is formed on the upper surface of the p-AlGaAs second cladding layer 308.

  As a result, a stripe-shaped ridge portion Ri extending in the X direction is formed by the p-AlGaAs second cladding layer 308 and the p-GaAs contact layer 309 among the AlGaAs-based semiconductor layers described above. The ridge Ri comprising the p-AlGaAs second cladding layer 308 and the p-GaAs contact layer 309 has a width of about 2.8 μm.

  An insulating film 310 made of SiN is formed on the upper surface of the p-AlGaAs etching stop layer 307, the side surface of the p-AlGaAs second cladding layer 308, and the upper surface and side surfaces of the p-GaAs contact layer 309. The insulating film 310 formed in step 1 is removed by etching. Then, a p-electrode 311 made of Cr / Au is formed on the p-GaAs contact layer 309 exposed to the outside. Further, a p-side pad electrode 29b is formed by a sputtering method, a vacuum evaporation method or an electron beam evaporation method so as to cover the upper surface of the p electrode 311.

  Thus, an AlGaAs semiconductor layer having a laminated structure is formed on one surface side of the n-GaAs substrate 29a.

  In the infrared semiconductor laser element 29, an infrared emission point is formed at the position of the MQW active layer 304 below the ridge Ri. In this example, the MQW active layer 304 corresponds to the pn junction surface of FIG.

  From the above, the semiconductor laser device 540 according to the fifth embodiment has the reverse voltage applied to the second semiconductor laser element 12 and the third semiconductor laser element 29 when the first semiconductor laser element 11 is driven. Is applied and no current flows, the first semiconductor laser element can be driven independently.

  Further, even when the first semiconductor laser element 11, the second semiconductor laser element 12, and the third semiconductor laser element 29 are provided in the same package body 19, the number of power supply pins is not increased from the conventional number. can do. As a result, blue-violet laser light, red laser light, and infrared laser light can be emitted from the first semiconductor laser element 11, the second semiconductor laser element 12, and the third semiconductor laser element 29. Compatibility with the semiconductor laser device can be maintained.

(Correspondence between each component of claim and each part of embodiment)
In the first to fifth embodiments, the n-side electrodes 11c, 12c, and 29c correspond to one electrode or the other electrode, and the p-side pad electrodes 11b, 12b, and 29b correspond to the other electrode or the one electrode. The n-side electrodes 11c, 12c, and 29c correspond to the cathode, and the p-side pad electrodes 11b, 12b, and 29b correspond to the anode. The n-side electrode of the photodiode 27 corresponds to one electrode or the other electrode, and the p-side electrode 27a corresponds to the other electrode or the one electrode. The n-side electrode of the photodiode 27 corresponds to the cathode, and the p-side electrode 27a corresponds to the anode.

  The first semiconductor laser element 11 corresponds to the first semiconductor laser element, the blue-violet laser light corresponds to the light having the first wavelength, and the second semiconductor laser element 12 corresponds to the second semiconductor laser element. Correspondingly, the red laser light corresponds to light of the second wavelength, the third semiconductor laser element 29 corresponds to the third semiconductor laser element, and the infrared laser light corresponds to light of the third wavelength.

  Further, the package body 19 corresponds to a package, the drive circuit 501 corresponds to a first power source, and the DC power source 502 corresponds to a second power source.

(Other embodiments)
In the first to fifth embodiments, the first semiconductor laser element 11, the second semiconductor laser element 12, and the third semiconductor laser element 29 whose oscillation start voltage has a fixed relationship with the oscillation wavelength. Although described above, the present invention is not limited to this, and the present invention can also be applied to a semiconductor laser device in which the oscillation start voltage does not have a fixed relationship with the oscillation wavelength.

  In the first to third and fifth embodiments, the drive circuit 501 includes a DC power source that generates the DC voltage V. However, the present invention is not limited to this, and a sine wave is superimposed on the DC voltage. A power supply that generates a voltage generated or a power supply that generates a voltage on which a pulse waveform is superimposed may be incorporated.

  Furthermore, in the first to fifth embodiments, the first to third semiconductor laser elements 11, 12, and 29 are arranged so that the p-side pad electrode is on the support base side. However, the present invention is not limited to this, and the n-side electrode may be disposed on the support substrate side.

  In the first to fifth embodiments, the first to third semiconductor laser elements 11, 12, and 29 are arranged side by side in the horizontal direction, but the present invention is not limited to this. Other semiconductor laser elements may be stacked on one of the semiconductor laser elements 11, 12, and 29. In this case, in order to supply different voltages to the electrodes of the plurality of stacked semiconductor laser elements, a layer for electrically insulating them may be inserted between the semiconductor laser elements.

  Specifically, in the first to fourth embodiments, for example, the second semiconductor laser element 12 is stacked on the first semiconductor laser element 11 having a short wavelength with an insulating layer interposed therebetween. May be. In the fifth embodiment, for example, the second semiconductor laser element 12 and the third semiconductor laser element 29 are sandwiched between the first semiconductor laser element 11 having a short wavelength and an insulating layer interposed therebetween. Either one of them may be stacked, or both the second semiconductor laser element 12 and the third semiconductor laser element 29 may be disposed on the first semiconductor laser element 11 with an insulating layer interposed therebetween. Alternatively, they may be stacked and arranged side by side.

  In the fifth embodiment, both the second semiconductor laser element 12 and the third semiconductor laser element 29 are laterally disposed on the first semiconductor laser element 11 having a short wavelength with an insulating layer interposed therebetween. In the case where the light emitting points are arranged in a method, the light emitting point of the second semiconductor laser element 12 may be positioned in the vicinity immediately above the light emitting point of the first semiconductor laser element 11, or the first semiconductor laser may be arranged. You may arrange | position so that the light emission point of the 3rd semiconductor laser element 29 may be located in the vicinity just above the light emission point of the element 11. FIG. Further, the light emitting points of the second semiconductor laser element 12 and the third semiconductor laser element 29 may be arranged on both sides with the light emitting point of the first semiconductor laser element 11 interposed therebetween. Further, the light emitting points of the first semiconductor laser element 11 and the third semiconductor laser element 29 may be arranged on both sides so as to sandwich the light emitting point of the second semiconductor laser element 12, The light emitting points of the first semiconductor laser element 11 and the second semiconductor laser element 12 may be disposed on both sides of the light emitting point of the third semiconductor laser element 29.

  In the fifth embodiment, the second semiconductor laser element 12 and the third semiconductor laser element 29 may be integrated on the same substrate.

  INDUSTRIAL APPLICABILITY The present invention can be used for an optical recording medium driving device that supports high speed information processing and large capacity.

1 is an external perspective view showing a semiconductor laser device according to a first embodiment. It is a typical front view which shows the state which removed the cover body of the semiconductor laser apparatus of FIG. FIG. 2 is a schematic top view showing a state where a lid of the semiconductor laser device of FIG. 1 is removed. It is a circuit diagram which shows the electrical wiring of a semiconductor laser apparatus. FIG. 5 is a circuit diagram showing electrical wiring of an optical device using the semiconductor laser device of FIG. 4. It is typical sectional drawing for demonstrating the detail of the structure of a blue-violet semiconductor laser element. It is typical sectional drawing for demonstrating the detail of the structure of a red semiconductor laser element. It is explanatory drawing which shows the state which used the semiconductor laser apparatus which concerns on 1st Embodiment for the pick-up for optical disk systems which are examples of an optical apparatus. It is an external appearance perspective view which shows the semiconductor laser apparatus which concerns on 2nd Embodiment. FIG. 10 is a schematic front view showing a state where a lid of the semiconductor laser device of FIG. 9 is removed. FIG. 10 is a schematic top view showing a state where the lid of the semiconductor laser device of FIG. 9 is removed. It is a circuit diagram which shows the electrical wiring of a semiconductor laser apparatus. It is a circuit diagram which shows the electrical wiring of the optical apparatus using the semiconductor laser apparatus of FIG. It is an external appearance perspective view which shows the semiconductor laser apparatus which concerns on 3rd Embodiment. It is a typical front view which shows the state which removed the cover body of the semiconductor laser apparatus of FIG. It is a typical top view which shows the state which removed the cover body of the semiconductor laser apparatus of FIG. It is a circuit diagram which shows the electrical wiring of a semiconductor laser apparatus. It is a circuit diagram which shows the electrical wiring of the optical apparatus using the semiconductor laser apparatus of FIG. It is an external appearance perspective view which shows the semiconductor laser apparatus which concerns on 4th Embodiment. FIG. 20 is a schematic front view showing a state where the lid of the semiconductor laser device of FIG. 19 is removed. FIG. 20 is a schematic top view showing a state where the lid of the semiconductor laser device of FIG. 19 is removed. It is a circuit diagram which shows the electrical wiring of a semiconductor laser apparatus. It is an external appearance perspective view which shows the semiconductor laser apparatus which concerns on 5th Embodiment. FIG. 24 is a schematic front view showing a state in which the lid of the semiconductor laser device of FIG. 23 is removed. FIG. 24 is a schematic top view showing a state where the lid of the semiconductor laser device of FIG. 23 is removed. It is a circuit diagram which shows the electrical wiring of a semiconductor laser apparatus. It is a circuit diagram which shows the electrical wiring of the optical apparatus using the semiconductor laser apparatus of FIG. It is typical sectional drawing for demonstrating the detail of the structure of an infrared color semiconductor laser element. 10 is a schematic diagram showing a semiconductor laser device described in Patent Document 1. FIG. FIG. 27 is a circuit diagram of the semiconductor laser device of FIG. 26.

DESCRIPTION OF SYMBOLS 11 1st semiconductor laser element 12 2nd semiconductor laser element 11b, 12b p side pad electrode 11c, 12c n side electrode 19 Package body 501 Drive circuit 502 DC power supply

Claims (9)

A semiconductor laser device;
A first power source;
A second power source,
The semiconductor laser device includes:
A first semiconductor laser element having one electrode and the other electrode and emitting light of a first wavelength;
A second semiconductor laser element having one electrode and the other electrode, and emitting light having a second wavelength longer than that of the first semiconductor laser element;
A conductive package for housing the first and second semiconductor laser elements,
One electrode and the other electrode of the first semiconductor laser element are insulated from the package;
The second semiconductor laser element is driven by the first power source,
A unipolar potential is applied to the other electrode of the first semiconductor laser element by the first power source,
An optical device characterized in that a potential having a polarity opposite to the one polarity is applied to one electrode of the first semiconductor laser element by the second power source. The first semiconductor laser element has a first oscillation start voltage,
The optical device according to claim 1, wherein the second semiconductor laser element has a second oscillation start voltage lower than the first oscillation start voltage. The first semiconductor laser element is made of a material containing a nitride semiconductor,
The optical device according to claim 1, wherein the second semiconductor laser element is made of a material that does not contain a nitride semiconductor. A semiconductor laser device;
A first power source;
A second power source,
The semiconductor laser device includes:
A first semiconductor laser element having one electrode and the other electrode and having a first oscillation start voltage;
A second semiconductor laser element having one electrode and the other electrode and having a second oscillation start voltage lower than the first oscillation start voltage;
A conductive package for housing the first and second semiconductor laser elements,
One electrode and the other electrode of the first semiconductor laser element are insulated from the package;
The second semiconductor laser element is driven by the first power source,
A unipolar potential is applied to the other electrode of the first semiconductor laser element by the first power source,
An optical device characterized in that a potential having a polarity opposite to the one polarity is applied to one electrode of the first semiconductor laser element by the second power source. A semiconductor laser device;
A first power source;
A second power source,
The semiconductor laser device includes:
A first semiconductor laser element having one electrode and the other electrode and made of a material containing a nitride semiconductor;
A second semiconductor laser element having one electrode and the other electrode and made of a material not containing a nitride semiconductor;
A conductive package for housing the first and second semiconductor laser elements,
One electrode and the other electrode of the first semiconductor laser element are insulated from the package;
The second semiconductor laser element is driven by the first power source,
A unipolar potential is applied to the other electrode of the first semiconductor laser element by the first power source,
An optical device characterized in that a potential having a polarity opposite to the one polarity is applied to one electrode of the first semiconductor laser element by the second power source. A first semiconductor laser element having one electrode and the other electrode;
A second semiconductor laser element having one electrode and the other electrode;
A third semiconductor laser element having one electrode and the other electrode;
A conductive package containing the first and second semiconductor laser elements;
A first power supply pin provided in the package;
A second power supply pin provided in the package;
A third power supply pin provided in the package;
A sub-board,
A first metal layer, a second metal layer, and a third metal layer are formed on the sub-substrate with a gap therebetween,
The first semiconductor laser element is disposed on the first metal layer, the one electrode side of the first semiconductor laser element being electrically connected to the first metal layer,
The second semiconductor laser element is disposed on the second metal layer with the one electrode side of the second semiconductor laser element being electrically connected to the second metal layer,
The third semiconductor laser element is disposed on the third metal layer with the one electrode side of the third semiconductor laser element being electrically connected to the third metal layer,
The first semiconductor laser element is disposed between the second semiconductor laser element and the third semiconductor laser element,
The first, second and third feed pins are electrically isolated from the package;
The one electrode of the first semiconductor laser element, the one electrode of the second semiconductor laser element, and the one electrode of the third semiconductor laser element are the first, second, and third feed pins, respectively. And electrically insulated from the package by the sub-board,
The other electrode of the second half device laser element and the other electrode of the third half device laser element are electrically connected to the package;
The semiconductor laser device, wherein the other electrode of the first half-device laser element is insulated from the package.   The first power supply pin is located on the upper surface of the sub-substrate, and the second power supply pin is located on the second semiconductor laser element side when viewed from the upper surface side of the sub-substrate, 7. The semiconductor laser device according to claim 6, wherein the third power supply pin is located on the third semiconductor laser element side when viewed from the upper surface side of the sub-substrate. The one electrode of the first semiconductor laser element is electrically connected to the first power supply pin by a first wire,
The one electrode of the second semiconductor laser element is electrically connected to the second power supply pin by a second wire,
The one electrode of the third semiconductor laser element is electrically connected to the third power feed pin by a third wire,
The other electrodes of the second half device laser element and the third half device laser element are electrically connected to the package by a fourth wire and a fifth wire, respectively.
The said 4th wire and the said 5th wire are located in the side from which a laser beam is radiate | emitted from the said 1st wire, the said 2nd wire, and the said 3rd wire, The Claim 6 characterized by the above-mentioned. 8. The semiconductor laser device according to 7. In the portion of the first metal layer extending from the rear end surface of the first semiconductor laser element, the one electrode of the first semiconductor laser element and the first power feed pin are connected by the first wire. The semiconductor laser device according to claim 6, wherein the semiconductor laser device is provided.

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