JP2010160943A - Transcription device for manufacturing organic el panel, method for manufacturing organic el panel, and support for organic el panel - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a transcription device used for manufacturing an organic EL panel which transcribes a transcription layer including a light-emitting layer or an electrode layer on a glass substrate by a simple constitution with high precision without receiving any thermal effect. <P>SOLUTION: The transcription device 100 includes a carrier retaining part 103 to retain a carrier 20 in which the transcription layer 30 constituted of a negative electrode layer 31 and an organic EL layer 32 constituting the organic EL panel is temporarily formed, a substrate retaining part 102 to retain the glass substrate 10 to constitute the organic EL panel while opposing to the carrier 20, and a laser light source 104 to irradiate a pulse laser beam toward the carrier 20 and the glass substrate 10 which are mutually opposed arranged. On a formed face 21 in which the transcription layer 30 in the carrier 20 is formed, a plurality of groove-like periodical structures 22 composed of minute uneven shapes are formed. This periodical structure 22 is formed by irradiating femtosecond laser beam on the formed face 21 of the carrier 20. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a transfer device used for manufacturing an organic EL panel, a method for manufacturing the organic EL panel, and a support for temporarily holding a transfer layer in manufacturing the organic EL panel.

  In general, an organic EL (Electro Luminescence) panel is known as a self-luminous electronic display device. An organic EL panel is a display device that utilizes a phenomenon (luminescence: Luminescence) that emits light by applying an electric field with a light emitting layer made of a fluorescent compound sandwiched between a positive electrode and a negative electrode. Conventionally, as one method of manufacturing an organic EL panel, for example, a thermal transfer method (LITI method) using a laser beam as shown in Patent Document 1 and Patent Document 2 below is known.

  In the thermal transfer method, laser light is irradiated in a state where a light emitting layer and a negative electrode layer (or a positive electrode layer) formed on a donor film are arranged opposite to a positive electrode layer (or a negative electrode layer) formed on a glass substrate. Thus, the light emitting layer and the negative electrode layer (or positive electrode layer) formed on the donor film are transferred onto the positive electrode layer (or negative electrode layer) of the glass substrate by heat.

  However, in the method of manufacturing an organic EL panel using such a thermal transfer method, since the light emitting layer and the negative electrode layer (or positive electrode layer) are transferred using heat, the light emitting layer and the negative electrode layer (or positive electrode) are transferred. The property of the layer) may change due to heat. In addition, due to the propagation of heat generated in the light emitting layer and the negative electrode layer (or the positive electrode layer) to be transferred, the light emitting layer and the negative electrode layer not to be transferred are transferred and patterning accuracy is lowered. There is. Due to such a decrease in transfer accuracy, there is a problem that the manufacturing accuracy of the organic EL panel decreases.

  In Patent Document 3 below, heat transfer to a light emitting layer and a negative electrode layer that are not targeted for transfer is suppressed by forming a heat insulating layer between the donor film and the light emitting layer and the negative electrode layer. Technology is disclosed. However, forming the heat insulating layer on the donor film has a problem that the structure and the number of manufacturing steps of the organic EL panel are complicated and the manufacturing cost is increased.

JP-A-11-260549 JP 2002-75636 A JP 2008-147016 A

  The present invention has been made to address the above problems, and its purpose is to transfer a transfer layer including a light emitting layer or an electrode layer onto a glass substrate with high accuracy and a simple structure without being affected by heat. Another object of the present invention is to provide a transfer device used for manufacturing an organic EL panel, a method for manufacturing the organic EL panel, and a support for temporarily holding a transfer layer in manufacturing the organic EL panel.

  In order to achieve the above object, the invention according to claim 1 is characterized in that a plurality of fine irregularities are formed on a forming surface for temporarily forming a transfer layer including a light emitting layer or an electrode layer constituting an organic EL panel. A carrier holding part for holding a carrier having a periodic structure formed thereon, a substrate holding part for holding a glass substrate constituting the organic EL panel in a state facing the carrier held by the carrier holding part, and glass A transfer layer disposed opposite to the substrate is provided with a laser light source for irradiating a pulse laser beam, and the transfer layer is transferred onto the glass substrate by the irradiation of the pulse laser beam.

  According to the feature of the invention according to claim 1 configured as described above, the transfer device used for manufacturing the organic EL panel can transfer the transfer layer formed on the periodic structure having a plurality of fine irregularities on the carrier. By irradiating with a pulse laser beam, the transfer layer is transferred onto a substrate disposed opposite to the transfer layer. Here, the periodic structure means a fine periodic uneven shape formed on the surface of the carrier. In this case, according to the present inventor, the transfer layer on the periodic structure irradiated with the pulse laser beam is peeled off and transferred onto the substrate without being affected by heat. This is because the energy of the pulsed laser light applied to the carrier having the periodic structure formed is peeled off without being converted into heat, specifically, the periodic structure or the transfer layer is temporarily removed. It is thought that it was converted into energy for deformation. As a result, the transfer layer can be transferred onto the substrate with high accuracy with a simple configuration without being affected by heat.

  In this case, in the organic EL panel manufacturing transfer apparatus, the periodic structure may have an interval between the convex portions and a height difference between the convex portions and the concave portions of several nm or more and several tens of μm or less.

  According to this, the interval between the convex part and the convex part and the height difference between the convex part and the concave part in the periodic structure formed on the surface of the carrier are set to several nm or more and several tens nm or less. As a result, according to the experiment of the present inventor, the transfer layer formed on the periodic structure of the carrier can be accurately peeled and transferred onto the substrate.

  In these cases, in the transfer device for manufacturing an organic EL panel, the periodic structure may be formed in a groove shape, a dimple shape, or an embossed shape, for example.

  According to this, the periodic structure formed on the surface of the carrier has a shape including one of a groove shape, a dimple shape, and an emboss shape. As a result, according to the experiment of the present inventor, the transfer layer formed on the periodic structure of the carrier can be accurately peeled and transferred onto the substrate.

  In these cases, in the transfer device for manufacturing an organic EL panel, the periodic structure may be formed using femtosecond laser light.

According to this, a periodic structure composed of a plurality of fine irregularities is formed by irradiating the surface of the carrier with so-called femtosecond laser light. In this case, the femtosecond laser beam is a pulse laser beam having an extremely short pulse width of fs (femtosecond: 10 ⁻¹⁵ sec). As a result, according to the experiments by the present inventors, it is possible to accurately form a periodic structure in which the distance between the convex portion and the convex portion and the height difference between the convex portion and the concave portion are several nm or more and several tens of nm or less. .

  According to a fifth aspect of the present invention, in the transfer device for manufacturing an organic EL panel according to the fifth aspect of the present invention, the pulse laser light emitted from the laser light source is further interposed between the carrier holding unit and the laser light source. An aperture having a light transmission hole for defining the cross-sectional shape is provided.

  According to another feature of the present invention configured as described above, the cross-sectional shape of the pulsed laser light emitted from the laser light source is defined by the aperture disposed between the carrier holder and the laser light source. Thereby, the cross-sectional shape of the transfer layer to be transferred can be changed to a shape other than a circular shape (light spot shape), and variations of the transfer mode of the transfer layer can be expanded. In this case, in place of or in addition to the aperture, the cross-sectional shape of the transfer layer to be transferred is circular (also using a laser light source having a so-called beam shaper function that can change the cross-sectional shape of the pulsed laser light to be irradiated ( The shape can be other than the shape of the light spot, and the variation of the transfer mode of the transfer layer can be expanded.

  In addition, the present invention can be implemented not only as a transfer device for manufacturing an organic EL panel, but also in a method for manufacturing an organic EL panel and a transfer device used for manufacturing the organic EL panel or a method for manufacturing an organic EL panel. It can also be implemented as an invention of a carrier for temporarily forming.

1 is a schematic configuration diagram schematically showing an overall configuration of a transfer apparatus according to an embodiment of the present invention. FIG. 2 is an enlarged cross-sectional view schematically showing a carrier held by the transfer device shown in FIG. 1 and a transfer layer formed on the carrier. It is a block diagram which shows the whole structure of the manufacturing apparatus of the organic EL panel in which the transfer apparatus shown in FIG. 1 is used. (A), (B) is explanatory drawing for demonstrating the process which transfers a transfer layer to a glass substrate with the transfer apparatus shown in FIG. It is the structure schematic which shows typically the whole structure of the transfer apparatus which concerns on the modification of this invention.

(Configuration of transfer apparatus 100)
Hereinafter, an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a schematic configuration diagram schematically showing the configuration of the main part of a transfer apparatus 100 according to the present invention. This transfer device 100 is used for forming a transfer layer 30 composed of a light emitting layer and an electrode layer on a glass substrate 10 constituting the front side of an organic EL panel by a transfer method in a process of manufacturing an organic EL (Electro Luminescence) panel. It is a mechanical device. Note that each drawing referred to in the present specification is schematically represented by exaggerating some of the components in order to facilitate understanding of the present invention. For this reason, the dimension, ratio, etc. between each component may differ. The organic EL panel is a self-luminous electronic display device configured by arranging a light emitting layer that emits electroluminescence between a positive electrode and a negative electrode.

  The transfer apparatus 100 includes a substrate holding unit 102 in an upper part of the housing 101 that can form an airtight internal space by closing the door 101a. The substrate holding unit 102 is a holding mechanism for holding the glass substrate 10 constituting the front side of the organic EL panel (not shown), and is assembled to an actuator 102 a provided on the upper surface of the housing 101. The operation of the actuator 102a is controlled by a transfer control device (not shown), and the substrate holding unit 102 is displaced up and down in the Z direction (up and down direction) in the housing 101 and rotationally displaced in the θa direction in the drawing. The X direction shown in the figure is the left-right direction in FIG. 1, the Y direction shown in the figure is a direction orthogonal to the X direction shown in the figure, and is a depth direction orthogonal to the paper surface of FIG. .

  A carrier holding unit 103 is provided below the substrate holding unit 102. The carrier holding unit 103 is a holding mechanism for holding the plate-like carrier 20, and is fixedly provided at the bottom of the housing 101. The carrier 20 is a conductive and light transmissive glass plate material on which the transfer layer 30 formed on the glass substrate 10 constituting the organic EL panel is temporarily formed. In the present embodiment, a glass material having conductivity by using vanadium as a main component is formed into a square shape having a thickness of about 5 mm. As shown in FIG. 2, a groove-like periodic structure 22 having a plurality of fine irregularities is formed on the forming surface 21 of the carrier 20 on which the transfer layer is formed.

  The periodic structure 22 is formed by continuously forming concave and convex shapes with extremely fine intervals and depths of several tens to several hundreds of nanometers. In the present embodiment, the periodic structure 22 having a distance (pitch) between the convex portions and the convex portions of about 530 nm and a height difference (depth) between the convex portions and the concave portions of about 10 nm is formed on the formation surface 21 of the carrier 20. Is formed. In FIG. 1, the periodic structure 22 formed on the formation surface 21 of the carrier 20 is indicated by hatching. In FIG. 2, the size of the periodic structure 22 is exaggerated.

  The periodic structure 22 is formed on the formation surface 21 of the carrier 20 by a known method. In other words, in the present embodiment, the formation surface 21 of the carrier 20 is irradiated with so-called femtosecond laser light having a wavelength of 800 nm, a pulse width of 120 fs (femtosecond), and a repetition frequency of 1 kHz. When the formation surface 21 of the carrier 20 is irradiated with the femtosecond laser light, a part of incident light (p-polarized component) irradiated on the formation surface 21 and surface scattered light generated on the formation surface 21 Interference occurs. In this case, if the fluence (irradiation amount) of the incident light is in the vicinity of the ablation threshold (ablation: a phenomenon in which the surface is decomposed by evaporation or erosion), ablation occurs in the interference part of the light, and the groove shape is extremely fine. Is formed in a self-organizing manner. Then, the periodic structure 22 is formed on the formation surface 21 of the carrier 20 by scanning while converging the focal point of the femtosecond laser beam.

  The transfer layer 30 formed on the formation surface 21 of the carrier 20 includes a negative electrode layer 31 and an organic EL layer 32 from the formation surface 21 side. Among these, the negative electrode layer 31 constitutes one electrode for generating an electric field in the organic EL layer 32, and is a layer having aluminum as a main component and a thickness of about 200 nm. In this embodiment, it is formed on the formation surface 21 of the carrier 20 by vapor deposition. The negative electrode 31 can be made of an alloy or a halide containing lithium, magnesium, calcium and the like in addition to aluminum.

  On the other hand, the organic EL layer 32 includes an electron transport layer (ETL) 32a, an emission layer (EML) 32b, and a hole transport layer (HTL) 32c from the negative electrode layer 31 side. The product is about 70 nm thick. Among these, the electron transport layer 32a is a layer that transmits electrons and blocks the transmission of holes. For example, a 1,3,4-oxazole derivative, a 1,2,4-triazole derivative (TAZ), or the like. Is a layer having a thickness of about 20 nm.

  The light emitting layer 32b is a layer that emits light by recombination of holes and electrons when an electric field is applied to the organic EL layer 32. For example, the light emitting layer 32b is made of an alq3 aluminum complex and has a thickness of about 30 nm. Is a layer. Three types of the light emitting layer 32b are prepared for each of the three colors to emit light. That is, a light emitting layer 32bR that emits red light, a light emitting layer 32bG that emits green light, and a light emitting layer 32bB that emits blue light are prepared. Therefore, three types of transfer layers 30 are prepared for each of the three light emitting layers 32b (light emitting layer 32bR, light emitting layer 32bG, and light emitting layer 32bB).

  The hole transport layer 32c is a layer that transmits holes and blocks the transmission of electrons. For example, the hole transport layer 32c is a layer made of an aromatic amine derivative and having a thickness of about 20 nm. Each of the electron transport layer 32 a, the light emitting layer 32 b, and the hole transport layer 32 c is formed by sequentially laminating on the formation surface 21 of the carrier 20 by a vapor deposition method.

The organic EL layer 32 can be composed of at least the light emitting layer 32b, and in addition to the electron transport layer 33 and the hole transport layer 35, an electron injection layer (EIL), a hole injection layer (HIL) : Hole Injection Layer) and hole blocking layer (HBL: Hole
Block Layer) can also be configured. Further, the color emitted from the light emitting layer 32b is set to one color (for example, blue light), and a color conversion layer (a wavelength filter that converts blue light into red or green) is disposed adjacent to the light emitting layer 32b. You can also. In FIGS. 1 and 2, the thicknesses of the negative electrode layer 31 and the organic EL layer 32 are exaggerated.

  A laser light source 104 is provided at the bottom of the housing 101 inside the carrier holding unit 103. The laser light source 104 is a light source for irradiating the carrier 20 held by the carrier holder 103 with pulsed laser light. In this embodiment, it is composed of a YAG (Yttrium Aluminum garnet) solid-state laser, and irradiates a pulse laser beam having a wavelength of 532 nm, a pulse width of 8 ns (nanoseconds), and a light spot diameter of 20 μm. This laser light source 104 is supported by a displacement mechanism 105. The operation of the displacement mechanism 105 is controlled by the transfer controller, and the laser light source 104 is displaced in the X, Y, and Z directions in the housing 101 in the illustrated manner.

  Further, a vacuum pump 106 is provided in the lower portion of the right side wall of the housing 101 in the figure. The vacuum pump 106 is a suction pump for making the inside of the housing 101 into a vacuum state, and its operation is controlled by the transfer control device.

  The transfer device 100 configured as described above is incorporated in a manufacturing apparatus for manufacturing an organic EL panel. Here, the configuration of a manufacturing apparatus for manufacturing an organic EL panel will be briefly described with reference to FIG. The organic EL panel manufacturing apparatus 200 is mainly composed of four zones: an R transfer zone 210, a G transfer zone 220, a B transfer zone 230, and a sealing zone 240. Among these, the R transfer zone 210, the G transfer zone 220, and the B transfer zone 230 are processing regions for forming the transfer layer 30 for each of the three emission colors (R, G, B) on the glass substrate 10, respectively. For each zone, transfer devices 100R, 100G, 100B, film forming devices 211R, 221G, 231B, carrier stocks 212R, 222G, 232B, cleaning devices 213R, 223G, 233B and transport devices 214R, 224G, 234B are provided. Each has.

  Among these, the transfer devices 100R, 100G, and 100B are the transfer device 100 described above. The film forming apparatuses 211R, 221G, and 231B are mechanical devices that form the transfer layer 30 on the formation surface 21 of the carrier 20 by vapor deposition. The carrier stocks 212R, 222G, and 232B are storage chambers for temporarily storing the carrier 20 on which the transfer layer 30 is formed. The cleaning devices 213R, 223G, and 233B are mechanical devices that clean the carrier 20 by removing the remaining transfer layer 30 and the like from the carrier 20 after the transfer layer 30 is transferred by the transfer device 100. . The transfer devices 214R, 224G, and 234B are articulated arm robots that hold the glass substrate 10 and the carrier 20 and transfer them to the next process.

  The R transfer zone 210 is provided with an input stock 215. The input stock 215 is a storage chamber in which the glass substrate 10 manufactured in a separate process (not shown) is received in the organic EL panel manufacturing apparatus 200 and temporarily stored. These transfer devices 100R, 100G, and 100B, film forming devices 211R, 221G, and 231B, cleaning devices 213R, 223G, and 233B, transfer devices 214R, 224G, and 234B, and input stock 215 are operated by a panel manufacturing control device (not shown). Be controlled.

  The sealing zone 240 is a processing region for sealing the glass substrate 10 onto which the transfer layer 30 has been transferred with a glass sealing body (not shown), and includes a sealing body stock 241 and a sealing body. A pretreatment device 242, a sealing device 243, a transport device 244 and a discharge stock 245 are provided. Among these, the sealing stock 241 is a storage chamber for temporarily storing a sealing body manufactured in a separate process (not shown). Further, the sealing body pretreatment device 242 is a mechanical device for applying an adhesive after washing the sealing body with ultraviolet rays (UV light). The sealing device 243 is a mechanical device for sealing the transfer layer 30 transferred onto the glass substrate 10 with a sealing body. The transfer device 244 is an articulated arm robot for holding the glass substrate 10 and the sealing body and transferring them to the next process.

  Further, the discharge stock 245 is a storage chamber in which the glass substrate 10 is temporarily stored in order to supply the glass substrate 10 sealed by the sealing device 243 to another process (not shown). The operations of the sealing body pretreatment device 242, the sealing device 243, the transport device 244, and the discharge stock 245 are controlled by the panel manufacturing control device. The R transfer zone 210, the G transfer zone 220, the B transfer zone 230, and the sealing zone 240 are connected by standby chambers 251, 252, and 253, respectively. The standby chambers 251, 252, and 253 are standby areas for temporarily waiting for the glass substrate 10 to be put into the next process after the previous process is completed.

(Operation of the transfer device 100)
Next, the operation of the transfer device 100 configured as described above will be described. First, the glass substrate 10 manufactured in the glass substrate manufacturing process (not shown) is sequentially supplied and stocked to the input stock 215 in the organic EL panel manufacturing apparatus 200. In this case, in the glass substrate manufacturing process, the positive electrode layer 11 is formed on the glass substrate 10. The positive electrode layer 11 constitutes the other electrode for generating an electric field in the organic EL layer 32, and a transparent conductive material typified by ITO (indium tin oxide) or the like is formed in a predetermined X direction in the drawing. It is a layer having a thickness of about 200 nm formed so as to extend in parallel to the Y direction in the drawing with a gap. In this embodiment, it is formed on the glass substrate 10 by a vapor deposition method. The positive electrode layer 11 may be made of indium / zinc oxide or indium / germanium oxide in addition to ITO.

  The panel manufacturing control device of the organic EL manufacturing apparatus 200 controls the operation of the transport device 214R, grips and transports the glass substrate 10 stored in the input stock 215, and holds it on the substrate holder 102 of the transfer device 100R. In this case, the glass substrate 10 is held by the substrate holding part 10 in a horizontal posture in which the positive electrode layer 11 faces downward. Next, the panel manufacturing control apparatus controls the operation of the conveying device 214R to grip and convey the carrier 20 stocked in the carrier stock 212R, and hold it on the carrier holding portion 103 of the transfer device 100R. In this case, the transfer layer 30 including the light emitting layer 32bR that emits red light is formed on the formation surface 21 of the carrier 20 by the film forming apparatus 211R. The carrier 20 is held by the carrier holder 103 in a horizontal posture in which the transfer layer 30 faces upward so that the transfer layer 30 faces the positive electrode layer 11 of the glass substrate 10.

  Next, the panel manufacturing control apparatus instructs the transfer control apparatus of the transfer apparatus 100 to start transfer processing of the transfer layer 30. In response to this instruction, the transfer control device closes the opening / closing door 101a of the transfer device 100R to make the housing 101 airtight, and activates the vacuum 106 to bring the housing 101 into a vacuum state. To do. Next, as shown in FIG. 4A, the transfer control device controls the operation of the actuator 102a to lower the glass substrate 10 held by the substrate holding portion 102, thereby causing the positive electrode layer of the glass substrate 10 to move down. 11 is brought close to the transfer layer 30 (hole transport layer 32 c) of the carrier 20. In this case, the actuator 102a positions the glass substrate 11 between the positive electrode layer 11 of the glass substrate 10 and the transfer layer 30 of the carrier 20 through a gap of about 10 μm.

  Next, the transfer control device displaces the laser light source 104 by controlling the operation of the displacement mechanism 105 and positions the laser light source 104 at the transfer start position of the transfer layer 30 on the glass substrate 20. Then, the transfer control device controls the operation of the laser light source 104 to emit pulsed laser light toward the carrier 20. As a result, the carrier 20 held by the carrier holder 103 is irradiated with pulsed laser light having a wavelength of 532 nm, a pulse width of 8 ns (nanoseconds), and a light spot diameter of 20 μm from below the carrier 20. The

  The pulse laser beam incident from the lower surface of the carrier 20 reaches the transfer layer 30 through the periodic structure 22 formed on the formation surface 21 of the carrier 20. As a result, the transfer layer 30 (electron transport layer 32a) on the formation surface 21 of the carrier 20 irradiated with the pulsed laser beam is peeled off and is in close contact with the positive electrode layer 11 of the glass substrate 10. Since the exact mechanism of the phenomenon in which the transfer layer 30 formed on the formation surface 21 is peeled off by irradiating the formation surface 21 on which the periodic structure 22 is formed with a pulse laser beam is unclear, detailed description is omitted. However, the energy for separating the transfer layer 30 without converting the energy of the pulse laser beam irradiated to the carrier 20 on which the periodic structure 22 is formed into heat, specifically, the periodic structure 22 or the transfer layer. It is considered that 30 is converted into energy for temporarily deforming.

  As a result, the transfer layer 30 on the periodic structure 22 irradiated with the pulse laser beam is peeled off and transferred onto the glass substrate 10 without being affected by heat. According to the present inventor, the periodic structure 22 is formed on the formation surface 21 and the transfer layer 30 is formed on the periodic structure 22 as compared with the case where the formation surface 21 without the periodic structure 22 is irradiated with pulsed laser light. It was confirmed that the time required for peeling off the transfer layer 30 can be shortened and the shape accuracy of the transfer layer 30 to be peeled off can be improved.

  The transfer control device displaces the laser light source 104 by controlling the operation of the displacement mechanism 105 so that the light spot of the pulse laser beam traces the position where the red light emitting pixel is formed on the glass substrate 10. In the present embodiment, the light spot is scanned in parallel with the X direction (that is, the direction orthogonal to the positive electrode layer 11) with a predetermined interval in the Y direction. As a result, the transfer layer 30 composed of the light emitting layer 32bR that emits red light is sequentially transferred to the positions on the glass substrate 10 where the pixels that emit red light are formed.

  Then, the transfer control device stops the operation of the laser light source 104 and the actuator 102a when the transfer layer 30 composed of the light emitting layer 32bR is transferred to the glass substrate 10 by scanning the pulse laser beam. The glass substrate 10 held by the substrate holding part 102 is raised by controlling the operation. Thereby, on the positive electrode layer 11 of the glass substrate 10, as shown in FIG. 4B, the transfer layer 30 composed of the light emitting layer 32bR is transferred corresponding to the scanning position of the pulse laser beam. Then, the transfer control device controls the operation of the vacuum pump 105 to return the vacuum state in the housing 101 to the atmospheric pressure, and then opens the door 101a. In FIG. 4B, since the scanning direction of the light spot is the X direction in the figure, the transfer layer 30 transferred to the glass substrate 10 is shown, and the transfer layer 30 not transferred to the glass substrate 19 is carried. Shown in the body 20.

  Next, the panel manufacturing control device controls the operation of the transport device 214R to take out the glass substrate 10 from the housing 101 of the transfer device 100R and transport it to the standby chamber 251 and from the housing 101 to the carrier. 20 is taken out and conveyed into the cleaning device 213R. The cleaning device 213R removes and cleans the transfer layer 30 formed on the carrier 20 in accordance with an instruction from the panel manufacturing control device. The carrier 20 cleaned by the cleaning device 213R is taken out from the cleaning device 213R by the transport device 214R and transported to the film forming device 211R. The film forming apparatus 211R forms the transfer layer 30 including the light emitting layer 32bR that emits red light on the formation surface 21 of the carrier 20 in accordance with an instruction from the panel manufacturing control apparatus.

  On the other hand, the glass substrate 10 transported into the standby chamber 251 is transferred with the blue light in the B transfer zone 230 after the transfer layer 30 composed of the light emitting layer 32bG emitting green light is transferred in the G transfer zone 220. The transfer layer 30 composed of the light emitting layer 32bB emitting light is transferred. Since the transfer process of the transfer layer 30 made of the light emitting layer 32bG and the transfer layer 30 made of the light emitting layer 32bB is the same as the transfer process of the transfer layer 30 made of the light emitting layer 32bR, the description thereof will be omitted. Then, the glass substrate 10 onto which the transfer layers 30 including the light emitting layer 32bR, the light emitting layer 32bG, and the light emitting layer 32bB are transferred is sealed in the sealing zone 240 and then stocked in the discharge stock 245 to form an organic EL panel. Wait for the next process for manufacturing (mounting of drive IC, etc.).

  As can be understood from the above description of the operation, according to the embodiment, the transfer device 100 applies a pulse laser to the transfer layer 30 formed on the periodic structure 22 having a plurality of fine irregularities on the carrier 20. The transfer layer 30 is transferred onto the glass substrate 10 disposed opposite to the transfer layer 30 by irradiating light. In this case, according to the present inventor, the transfer layer 30 on the periodic structure 22 irradiated with the pulse laser beam is peeled off and transferred onto the glass substrate 10 without being affected by heat. This is the energy for peeling off the transfer layer 30 without converting the energy of the pulsed laser light applied to the carrier 20 on which the periodic structure 22 is formed into heat, specifically, the periodic structure 22 or the transfer layer. It is considered that 30 is converted into energy for temporarily deforming. As a result, the transfer layer 30 can be transferred onto the glass substrate 10 with a simple configuration and high accuracy without being affected by heat.

  Furthermore, in carrying out the present invention, the present invention is not limited to the above embodiment, and various modifications can be made without departing from the object of the present invention.

  For example, in the above embodiment, the carrier 20 is made of a conductive glass material having a thickness of 5 mm whose main component is vanadium. However, the material constituting the carrier 20 is not limited to the above embodiment. For example, an invar material (Fe—Ni alloy), a glass material, a dielectric, a resin material, or the like can be used. It is also possible to form a conductive or dielectric film on the surface of the glass material and form the periodic structure 22 on the surface of this film. In this case, a conductive or dielectric film corresponds to the carrier 20. Also by these, the same effect as the above-mentioned embodiment can be expected.

  Moreover, in the said embodiment, the support body 20 was comprised with the transparent material which can permeate | transmit light. This is because a so-called forward transfer method is employed in which a pulsed laser beam for transferring the transfer layer 30 is irradiated from below the carrier 20 and the periodic structure 22 is irradiated with the pulsed laser light via the carrier 20. . Therefore, a method of irradiating the periodic structure 22 with the pulsed laser light without passing through the carrier 20, specifically, for example, as shown in FIG. 5, above the laser light source 104, the carrier holder 103 in the above embodiment. A so-called rear transfer method in which a substrate holding portion 102 ′ having the same configuration as that of the substrate holding portion 102 ′ having the same configuration as the substrate holding portion 102 in the above embodiment is provided above the substrate holding portion 102 ′. When employed, the carrier 20 does not necessarily need to be made of a transparent material that can transmit light.

  However, in this case, the positive electrode layer 11 and the negative electrode layer 31 are made of a transparent material that can transmit light (for example, ITO (indium tin oxide), indium zinc oxide, or indium germanium oxide). There is a need. In this case, the optical axis of the pulsed laser light emitted from the laser light source 104 is inclined with respect to the formation surface 21 of the carrier 20 to prevent the transfer layer 30 to be transferred from being irradiated with the pulsed laser light. can do. According to this, the transfer layer 30 to be transferred can be prevented from being damaged by irradiating the pulse laser beam, and the configuration of the transfer device 100 can be freely set by increasing the degree of freedom of arrangement of the laser light source 104. The degree can be expanded. Moreover, you may comprise the support body 20 in the said embodiment with a colored glass material. According to this, the wavelength of the pulsed laser light that passes through the carrier 20 and reaches the periodic structure 22 can be made selective, and the light intensity of the pulsed laser light can be reduced, so that the transfer layer 30 can be transferred. Variations of the embodiment can be expanded.

  In the above embodiment, in order to transfer the transfer layer 30 formed on the carrier 20 onto the glass substrate 10, a pulse laser beam having a wavelength of 532 nm, a pulse width of 8 ns (nanoseconds), and a light spot diameter of 20 μm is used. Using. However, various conditions of the pulse laser beam such as the wavelength, pulse width, and light spot diameter of the pulse laser beam used for the transfer of the transfer layer 30 depend on the type, thickness, and layer to be formed of the transfer layer 30 to be transferred. However, the present invention is not limited to the above embodiment. An aperture having a light transmission hole formed of a through hole for defining the cross-sectional shape of the pulse laser beam emitted from the laser light source 104 may be disposed between the laser light source 104 and the carrier 20. According to this, the cross-sectional shape of the transfer layer 30 to be transferred can be a shape other than a circle (the shape of the light spot), and variations of the transfer mode of the transfer layer 30 can be expanded. In this case, in place of or in addition to the aperture, the cross-sectional shape of the transfer layer to be transferred is circular (also using a laser light source having a so-called beam shaper function that can change the cross-sectional shape of the pulsed laser light to be irradiated ( The shape can be other than the shape of the light spot, and the variation of the transfer mode of the transfer layer can be expanded.

  In the above embodiment, a so-called passive matrix type organic EL panel in which the organic EL layer 32 is sandwiched between the positive electrode layer 11 formed on the glass substrate 10 and the negative electrode layer 31 orthogonal to the positive electrode layer 11. The manufacture has been described. However, the present invention can also be applied to manufacture of a so-called active matrix type organic EL panel in which a TFT (Tin Film Transistor) is provided for each pixel of the organic EL panel.

  In the above embodiment, the groove-like periodic structure 22 having a plurality of fine irregularities is formed on the formation surface 21 of the carrier 20. However, the shape and the size of the periodic structure 22 are not limited to the above embodiment. According to the inventor, it is preferable that the interval (pitch) between the convex portions and the height difference (depth) between the convex portions and the concave portions are several nm or more and several tens of μm. When the periodic structure 22 is formed with a size of several tens of microns, it is not always necessary to use femtosecond laser light, and pulse laser light (for example, picosecond laser light) having a pulse width longer than femtosecond is used. Can do. According to an experiment by the present inventor, it is preferable to use a laser beam having a pulse width of approximately 1 fs (femtosecond) to 10 ps (picosecond). In addition to the groove shape, the periodic structure 22 has a plurality of convex portions embossed in a spherical shape, trapezoidal shape or conical shape, or a plurality of concave portions dimpled in a spherical shape, trapezoidal shape or conical shape. It can also be formed into a shape. Also by these, the same effect as the above-mentioned embodiment can be expected.

  In the above embodiment, when the transfer layer 30 formed on the carrier 20 is transferred onto the glass substrate 10, the gap between the glass substrate 10 and the carrier 20 is set to about 10 μm. However, according to the present inventors, the gap between the glass substrate 10 and the carrier 20 when the transfer layer 30 formed on the carrier 20 is transferred onto the glass substrate 10 can be set in the range of 0 to 0.2 mm. It is. That is, the transfer layer 30 can be transferred while the glass substrate 10 and the carrier 20 are in close contact with each other, and the transfer layer is placed between the glass substrate 10 and the carrier 20 through a gap of about 0.2 mm at the maximum. 30 transfers can also be performed. Also by this, the same effect as the above-mentioned embodiment can be expected.

  In the above embodiment, the transfer layer 30 transferred to the glass substrate 10 is composed of the negative electrode layer 31 and the organic EL layer 32. However, the transfer layer 30 only needs to be composed of a layer to be transferred to the glass substrate 10, and may be composed only of the negative electrode layer 31 or the organic EL layer 32. In the present embodiment, the positive electrode layer 11 formed in advance on the glass substrate 10 may be the transfer target as the transfer layer 30 alone or together with the negative electrode layer 31 and the organic EL layer 32. According to this, since the positive electrode layer 11 is formed when the transfer layer 30 is formed, the step of forming the positive electrode layer 11 on the glass substrate 10 becomes unnecessary, and the manufacturing process of the organic EL panel can be made efficient. . In this case, the transfer layer 30 including the positive electrode layer 11 is collectively transferred to the glass substrate 10. Also by these, the same effect as the above-mentioned embodiment can be expected.

DESCRIPTION OF SYMBOLS 10 ... Glass substrate, 11 ... Positive electrode layer, 20 ... Carrier, 21 ... Formation surface, 22 ... Periodic structure, 30 ... Transfer layer, 31 ... Negative electrode layer, 32 ... Organic EL layer, 32a ... Electron transport layer, 32b ... Light emitting layer, 32c ... Hole transport layer, 100, 100R, 100G, 100B ... Transfer device, 101 ... Case, 101a ... Opening / closing door, 102,102 '... Substrate holder, 102a ... Actuator, 103,103' ... Carrier holder 104, laser light source, 105 displacement mechanism, 106 vacuum pump, 200 organic EL panel manufacturing apparatus, 210 R transfer zone, 220 G transfer zone, 230 B transfer zone, 240 sealing zone.

Claims (14)

A carrier holding portion for holding a carrier having a periodic structure formed of a plurality of fine irregularities formed on a formation surface for temporarily forming a transfer layer including a light emitting layer or an electrode layer constituting an organic EL panel; ,
A substrate holding part for holding a glass substrate constituting the organic EL panel in a state of facing the carrier held by the carrier holding part;
A laser light source for irradiating the transfer layer disposed opposite to the glass substrate with a pulse laser beam;
A transfer device for manufacturing an organic EL panel, which transfers the transfer layer onto the glass substrate by irradiation with the pulse laser beam. In the transfer device for manufacturing an organic EL panel according to claim 1,
In the periodic structure, a transfer device for manufacturing an organic EL panel is characterized in that the interval between the convex portions and the height difference between the convex portions and the concave portions are each several nm or more and several tens of μm or less. In the transfer device for manufacturing an organic EL panel according to claim 1 or 2,
The transfer device for manufacturing an organic EL panel, wherein the periodic structure is formed in a groove shape, a dimple shape, or an emboss shape. In the transfer device for manufacturing an organic EL panel according to any one of claims 1 to 3,
The periodic structure is formed by using a femtosecond laser beam. In the transfer device for manufacturing an organic EL panel according to any one of claims 1 to 4,
For manufacturing an organic EL panel, comprising an aperture having a light transmission hole for defining a cross-sectional shape of a pulse laser beam emitted from the laser beam source between the carrier holder and the laser beam source Transfer device. A carrier holding step for holding a carrier having a periodic structure composed of a plurality of fine irregularities formed on a forming surface for temporarily forming a transfer layer including a light emitting layer or an electrode layer constituting an organic EL panel; ,
A substrate holding step for holding a glass substrate constituting the organic EL panel in a state of facing the held carrier;
A laser beam irradiation step of irradiating the transfer layer disposed opposite to the glass substrate with a pulsed laser beam,
A method for producing an organic EL panel, wherein the transfer layer is transferred onto the glass substrate by irradiation with the pulse laser beam. In the manufacturing method of the organic electroluminescent panel described in Claim 6,
The method for manufacturing an organic EL panel, wherein the periodic structure has an interval between the convex portions and a height difference between the convex portions and the concave portions, which are several nm or more and several tens of μm or less, respectively. In the manufacturing method of the organic electroluminescent panel of Claim 6 or Claim 7,
The method of manufacturing an organic EL panel, wherein the periodic structure is formed in a groove shape, a dimple shape, or an embossed shape. In the manufacturing method of the organic electroluminescent panel as described in any one of Claim 6 thru | or 8,
The method for manufacturing an organic EL panel, wherein the periodic structure is formed using femtosecond laser light. In the manufacturing method of the organic electroluminescent panel as described in any one of Claim 6 thru | or 9,
In the method of manufacturing an organic EL panel, the laser light irradiation step irradiates the transfer layer with the pulsed laser light through an aperture having a light transmission hole that defines a cross-sectional shape of the pulsed laser light. An organic EL panel for temporarily forming the transfer layer when a transfer layer including a light emitting layer or an electrode layer constituting the organic EL panel is transferred onto a substrate constituting the organic panel using a pulsed laser beam A carrier for manufacturing,
A carrier for manufacturing an organic EL panel comprising a periodic structure composed of a plurality of fine irregularities on a forming surface on which the transfer layer is formed. In the support for manufacturing an organic EL panel according to claim 11,
The organic EL panel manufacturing carrier according to claim 1, wherein the periodic structure has an interval between the convex portions and a height difference between the convex portions and the concave portions of several nm or more and several tens of μm or less. In the support for manufacturing an organic EL panel according to claim 11 or 12,
The periodic structure is formed in a groove shape, a dimple shape, or an embossed shape. In the carrier for manufacturing an organic EL panel according to any one of claims 11 to 13,
The periodic structure is formed using a femtosecond laser beam.

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