CN101186160B - Laser induced thermal imaging apparatus and laser induced thermal imaging method and fabricating method of organic light-emitting diode using the same - Google Patents
Laser induced thermal imaging apparatus and laser induced thermal imaging method and fabricating method of organic light-emitting diode using the same Download PDFInfo
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- CN101186160B CN101186160B CN2006101381932A CN200610138193A CN101186160B CN 101186160 B CN101186160 B CN 101186160B CN 2006101381932 A CN2006101381932 A CN 2006101381932A CN 200610138193 A CN200610138193 A CN 200610138193A CN 101186160 B CN101186160 B CN 101186160B
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- 238000000034 method Methods 0.000 title claims abstract description 74
- 238000001931 thermography Methods 0.000 title claims abstract description 66
- 239000000758 substrate Substances 0.000 claims abstract description 161
- 238000003384 imaging method Methods 0.000 claims abstract description 13
- 239000010410 layer Substances 0.000 claims description 72
- 230000008569 process Effects 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 23
- 238000012546 transfer Methods 0.000 claims description 14
- 239000011248 coating agent Substances 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 11
- 238000003475 lamination Methods 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 230000000694 effects Effects 0.000 claims description 6
- 239000012212 insulator Substances 0.000 claims description 5
- 239000011229 interlayer Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 239000002105 nanoparticle Substances 0.000 claims description 2
- -1 gate electrode Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 63
- 230000007423 decrease Effects 0.000 description 15
- 230000000630 rising effect Effects 0.000 description 15
- 239000010409 thin film Substances 0.000 description 7
- 239000011368 organic material Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 238000007599 discharging Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/435—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material
- B41J2/447—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using arrays of radiation sources
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
- H10K71/421—Thermal treatment, e.g. annealing in the presence of a solvent vapour using coherent electromagnetic radiation, e.g. laser annealing
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/18—Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
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Abstract
A laser induced thermal imaging apparatus and a laser induced thermal imaging method capable of uniformly adhering a donor film to an acceptor substrate by use of a magnetic force to achieve an effective laser induced thermal imaging method; and a method for fabricating an organic light-emitting diode using the same. The laser induced thermal imaging apparatus includes: a chamber in which a contact frame having a magnetic substance is located, to press toward an acceptor substrate containing a magnet located on a substrate stage with an imaging layer of a donor film located between the acceptor substrate and the contact frame; and a laser oscillator to irradiate the donor film through openings in the contact frame. Accordingly, the laser induced thermal imaging apparatus applies an improved adhesion between the donor film and the substrate, producing an organic light-emitting diode having an improved life span, yield and reliability.
Description
The application requires to be submitted on November 16th, 2005 the priority of the 2005-109818 korean application of Korea S Department of Intellectual Property, and the content of this application is incorporated herein by reference.
Technical field
Each side of the present invention relates to laser induced thermal imaging apparatus, laser induced thermal imaging method and utilizes it to make method of organic light emitting diodes, relate more specifically to when using the laser induced thermal imaging method to be laminated to organic thin film layer on the acceptor substrate, can be by magnet being provided to substrate and having a contact frame of magnetisable material, rely on magnetic force to improve the laser induced thermal imaging apparatus and the laser induced thermal imaging method of the bonding force between the imaging layer of acceptor substrate and donor film; And manufacturing method of organic light emitting diodes.
Background technology
Each side of the present invention relates to laser induced thermal imaging apparatus, laser induced thermal imaging method and utilizes it to make method of organic light emitting diodes, relate more specifically to when using the laser induced thermal imaging method to be laminated to organic thin film layer on the acceptor substrate, can be by magnet being provided to substrate and having a contact frame of magnetisable material, rely on magnetic force to improve the laser induced thermal imaging apparatus and the laser induced thermal imaging method of the bonding force between the imaging layer of acceptor substrate and donor film; And manufacturing method of organic light emitting diodes.
In each method of the organic thin film layer that is formed with OLED, by the vacuum moulding machine luminous organic material forms the deposition process of organic thin film layer with shadow shield, for example have owing to form superfine little pattern and be difficult to use in shortcoming such as large tracts of land demonstration such as being difficult to of causing of problems such as distortion mask.
In order to solve these problems of this deposition process, proposed organic thin film layer is directly formed the ink ejecting method of pattern.Ink ejecting method is by discharging discharging solution from ink jetting head to form the method for organic thin film layer, wherein discharging solution and prepare by luminescent material is dissolved or is dispersed in the solvent.Though this ink ejecting method is simple relatively on handling, for example have that output descends, uneven film thickness is even is difficult to be applicable to shortcoming such as large tracts of land demonstration.
Simultaneously, also proposed to use laser induced thermal imaging to handle to form the method for organic thin film layer.In this laser induced thermal imaging method, imaging layer closely is bonded on the acceptor substrate, and is transferred to the there by the laser beam heat subsequently.This transfer realizes in the following manner: to comprising the donor film scan laser of bottom substrate, light-heat converting layer and imaging layer; In light-heat converting layer, will be converted to heat, to extend this light-heat converting layer by the laser beam of bottom substrate; And extend contiguous imaging layer, and making the place that is scanned at this laser beam, organic layer is transferred on the acceptor substrate.The intrinsic advantage of laser induced thermal imaging method comprises high resolution design information, uniformly film thickness, performance that multilayer is carried out the ability of lamination and extended into the large scale mother glass.
Existing laser induced thermal imaging method is normally carried out under vacuum, the same chamber that makes luminescent layer shift therein can be mated with other deposition process that forms luminaire, but when the transfer of induced with laser heat is carried out under vacuum state according to existing method, its shortcoming is, because the connection power between donor film and the acceptor substrate is reduced, the transfer performance of imaging layer can descend.Therefore, the method for donor film and acceptor substrate being carried out lamination is very useful in the situation of laser induced thermal imaging method, thereby has attempted addressing these problems.
Hereinafter, describe existing laser induced thermal imaging method and conventional laser-induced thermal imaging device with reference to the accompanying drawings in detail.
Fig. 1 is the partial cross section view of existing laser induced thermal imaging apparatus.
With reference to Fig. 1, laser induced thermal imaging apparatus 100 comprises substrate platform 120 that is arranged within the chamber 110 and the laser irradiation device 130 that is arranged at the top of chamber 110.
At this moment, in order under the situation that does not have impurity 101 or space between acceptor substrate 140 and the donor film 150, to carry out lamination, the inside that induced with laser heat shifts the chamber 110 that produces does not therein remain on vacuum state, pipeline 161,163 is connected to the bottom of first holddown groove, 121 bottoms and second holddown groove 123 the air-breathing air door of vacuum pump P respectively, by air-breathing acceptor substrate 140 and donor film 150 are connected to each other.
Yet, though making other method of Organic Light Emitting Diode carries out under vacuum, but when this chamber interior is in vacuum state, air-breathing method with acceptor substrate and donor film close adhesion by vacuum pump is not effective, therefore the shortcoming of other method is, the life-span of product can be owing to insufficient the connection is subjected to influencing unfriendly with reliability.
Summary of the invention
In order to solve the above-mentioned of above mentioned prior art and/or other shortcoming, designed each side of the present invention.Correspondingly, each side of the present invention provides by utilizing the imaging layer of the magnetic force transfer donator film between contact frame and the acceptor substrate, can form the laser induced thermal imaging apparatus and the laser induced thermal imaging method of organic luminous layer; And utilize it to make method of organic light emitting diodes.
An aspect of of the present present invention is to provide laser induced thermal imaging apparatus, and this device comprises: process chamber, and it has donor film and comprises the acceptor substrate of magnet, to carry out the imaging layer that the shifts described donor film process to the described acceptor substrate; The substrate platform, it is arranged in the described process chamber and supports the described acceptor substrate that comprises magnet; Contact frame, it is arranged in the described chamber, makes that described contact frame has magnetisable material between the contact frame of described donor film in described acceptor substrate and described process chamber; And laser oscillator, it is formed at the outside or inner of described process chamber.
Another aspect of the present invention is to provide the laser induced thermal imaging method, this method comprises following operation: acceptor substrate is set, wherein magnet is formed at least one surface, and described acceptor substrate is formed with magnetisable material in described contact frame between contact frame and substrate platform; On described acceptor substrate, be provided with and have the donor film of imaging layer; The magnetic force that acts between the magnet by magnetisable material in being formed at contact frame and acceptor substrate carries out lamination to described donor film and described acceptor substrate; And by scan laser on described donor film, at least one zone of imaging layer of shifting described donor film is to described acceptor substrate.
Another aspect of the present invention provides the manufacturing method of organic light emitting diodes, wherein by the laser induced thermal imaging method, luminescent layer is formed between first electrode layer and the second electrode lay, this method comprises: the acceptor substrate transfer operation, in the substrate platform part of the contact frame that comprises magnetisable material acceptor substrate is set, wherein said acceptor substrate has pixel region and comprises magnet; The donor film transfer operation, setting has the donor film of luminescent layer on described acceptor substrate; Laminating operation utilizes to be formed on the magnet in the acceptor substrate and to be formed on magnetic force between the magnetisable material in the contact frame, and described acceptor substrate and described donor film are connected to each other; And the luminescent layer transfer operation, shine described donor film by scan laser, shift the described pixel region of described luminescent layer to described acceptor substrate.
Other invention of the present invention and/or advantage propose in will be described below and become obviously by following description, perhaps can obtain in to practice of the present invention.
Description of drawings
By the description to embodiment below in conjunction with accompanying drawing, these and/or others of the present invention and advantage will become obviously and be more readily understood, and this accompanying drawing is:
Fig. 1 is the partial cross section view of the existing laser induced thermal imaging apparatus of expression;
Fig. 2 is a perspective view of representing an embodiment of laser induced thermal imaging apparatus according to an aspect of the present invention;
Fig. 3 A-3E represents the cross-sectional view of laser induced thermal imaging method according to an embodiment of the invention; And
Fig. 4 A and 4B are the cross-sectional views of representing an embodiment of Organic Light Emitting Diode according to an aspect of the present invention.
Embodiment
Be described in detail with reference to embodiments of the invention below, example wherein illustrates in the accompanying drawings, and identical Reference numeral is represented components identical.With reference to the accompanying drawings embodiment is described, so that the present invention is made an explanation.
Fig. 2 is a perspective view of representing an embodiment of laser induced thermal imaging apparatus according to an aspect of the present invention.With reference to Fig. 2, this laser induced thermal imaging apparatus comprises chamber 230, substrate platform 200, contact frame 300, laser oscillator 400 and rising/ decline unit 500a, 500b.
Though the description of the embodiment of the invention has related to the position of components that distributes in vertically being provided with, should be appreciated that the present invention is not limited thereto, that is to say that these elements also can horizontal distribution.For example, substrate platform 200 can be arranged at the right side of process chamber 230, acceptor substrate 250 with magnet 210 can be positioned within the first configured slot 202a on substrate platform 200 left sides, and donor film 350 can be placed within the second configured slot 202b, is positioned at the left side of acceptor substrate 250.When the contact frame 300 in the left side that is arranged at process chamber 230 is driven to the right side, because driving mechanism and/or the contact frame that magnetic force the produced extruding from right to left between acceptor substrate magnet 210 and magnetisable material 310, donor film 350 is in turn laminated on the acceptor substrate 250.Similarly, laser oscillator 400 can be arranged on the horizontal direction of donor film 350, with illuminating laser beam flatly to donor film 350.
Rising/ decline unit 500a, 500b are divided into the first rising/decline unit 500a and the second rising/decline unit 500b.First rising/decline unit the 500a has the first key 550a, has the second key 550b to drive acceptor substrate 250, the second rising/decline unit 500b up and down, to drive donor film 350 up and down.For example, the first rising/decline unit 500a at first moves up to receive acceptor substrate 250 from the migration units (not shown), moves down then in the first configured slot 202a acceptor substrate 250 to be set.Subsequently, the second rising/decline unit 500b moves up to receive donor film 350 from the migration units (not shown), moves down then in the second configured slot 202b acceptor substrate 250 to be set.By this operation, acceptor substrate 250 and donor film 350 contact with each other.Donor film 350 is fixed by film carriage 351 subsequently, and is mobile up and down to prevent.
Above mentioned laser induced thermal imaging apparatus according to an aspect of the present invention also has the rising/decline driver element (not shown) that is connected with contact frame 300 with contact frame carriage 301, makes contact frame 300 be driven up and down by described rising/decline driver element.
Fig. 3 A is to represent the cross-sectional view of laser induced thermal imaging method according to an embodiment of the invention to 3E.
To 3E, laser induced thermal imaging method according to an aspect of the present invention has predetermined process chamber 230 with reference to Fig. 3 A, and uses end effect device 700 in the first configured slot 202a of substrate platform 200 substrate 250 to be set.First rising/decline unit the 500a moves up, and utilizes the first key 550a to receive substrate 250 and supporting substrate 250 (Fig. 3 A) from end effect device 700.When the first rising/decline unit 500a reduces substrate 250 when entering among the first configured slot 202a, end effect device 700 skids off outside the process chamber 230 (Fig. 3 B).
In the process below, end effect device 700 is used at the second configured slot 202b of substrate platform 200 donor film 350 being set.Second rising/decline unit the 500b moves up, and utilizes the second key 550b that is arranged among the second rising/decline unit 500b to receive donor film 350 and support donor film 350 (Fig. 3 C) from end effect device 700.Subsequently, by being provided with second donor film 350 is set among the unit 202b, donor film 350 is placed on the top of acceptor substrate 250, and close adhesion is on acceptor substrate 250, and donor film 350 remains fixed on the film carriage 351 (Fig. 3 D).
Subsequently, by applying close adhesion power, contact frame 300 contact with donor film 350 and close adhesion to donor film 350, make between acceptor substrate 250 and donor film 350, can not produce microcavity, wherein close adhesion each other.At this moment, contact frame 300 is fixed by contact frame carriage 310.Because magnet 210 is arranged in the upper surface or lower surface of acceptor substrate 250, by the bonding force between control contact frame 300 and the acceptor substrate 250, the close adhesion performance between acceptor substrate 250 and the donor film 350 can be improved.In follow-up process, laser oscillator 400 is used for carrying out the laser transfer process by the predetermined pattern of the opening 311 of contact frame 300.By this laser irradiation process, donor film 350 is transferred to predetermined pattern on the substrate 250, and this is that organic material wherein is transferred on the acceptor substrate 250 because donor film 350 is the transfer source.Therefore, contact frame opening 311 is a predetermined pattern, comes the predetermined pattern of transfer organic material on acceptor substrate 250 by opening 311 with the laser that allows scanning.That is to say that contact frame 300 can be used as mask, wherein laser can only be scanned (Fig. 3 E) on the presumptive area.
Above-mentioned laser induced thermal imaging method according to an aspect of the present invention, donor film 350 close adhesion are on acceptor substrate 250, and this receptor substrate 250 is fixed by applying the processing that loads on the contact frame 300, and wherein this processing realizes by allowing contact frame 300 to move down.When the process shown in Fig. 3 E was finished, described rising/decline driver element (not shown) was used to allow contact frame 300 to move up to turn back to initial position.
Fig. 4 A and 4B are the cross-sectional view of expression according to the Organic Light Emitting Diode embodiment of this aspect one embodiment.
With reference to Fig. 4 A and Fig. 4 B, the Organic Light Emitting Diode of each side has resilient coating 802, semiconductor layer 803, gate insulator 804, gate electrode 805, interlayer insulative layer 806, source electrode 807a and drain electrode 807b and cover layer 808 according to the present invention, and all these is formed on the substrate 800.
Because described Organic Light Emitting Diode comprises semiconductor layer 803, gate insulator 804 is formed on the resilient coating 802, and width is formed on the zone of gate insulator 804 corresponding to the gate electrode 805 of active layer 803a width.
Because described Organic Light Emitting Diode comprises gate electrode 805, interlayer insulative layer 806 is formed on the gate insulator 804, and source electrode 807a and drain electrode 807b are formed on the presumptive area of interlayer insulative layer 806.
Because described Organic Light Emitting Diode comprises source electrode 807a and drain electrode 807b, source electrode 807a and drain electrode 807b are formed, make them to be connected with the exposed region of resistance contact layer 803b, cover layer 808 is formed on the interlayer insulative layer 806.
Because described Organic Light Emitting Diode comprises first electrode layer 809, is formed with the pixels block layer (pixel barrier) 810 with opening (not shown) at cover layer 808, is used to expose at least one zone of first electrode layer 809.
Because described Organic Light Emitting Diode comprises luminescent layer 811, this luminescent layer 811 is formed on the opening of pixels block layer 810, and the second electrode lay 812 is formed on the pixels block layer 810.
As mentioned above, laser induced thermal imaging method according to an aspect of the present invention can improve the close adhesion power of Organic Light Emitting Diode, and life-span, output and reliability, this is because the transfer of described LASER HEAT is to carry out under vacuum state, when using described laser induced thermal imaging method that donor film and acceptor substrate are carried out lamination, because space, impurity between described donor film and the acceptor substrate are eliminated.These improvement can realize by being formed at the magnet in the described acceptor substrate and being formed at the magnetic force that produces between the magnetisable material in the described contact frame, so that described donor film and described acceptor substrate are carried out lamination.
Although several embodiments of the present invention are shown and illustrate, those skilled in the art will appreciate that under the principle and spirit that does not deviate from claim and full scope of equivalents thereof and limited, can carry out various variations to these embodiment.
Claims (26)
1. laser induced thermal imaging apparatus comprises:
Process chamber, it has donor film and comprises the acceptor substrate of magnet, to carry out the imaging layer that the shifts described donor film process to the described acceptor substrate;
The substrate platform, it is arranged in the described process chamber and supports described acceptor substrate;
Contact frame, it has magnetisable material and is arranged in the described chamber, makes described donor film between described contact frame and described acceptor substrate;
Laser oscillator, it is formed at the outside or inner of described process chamber, with irradiating laser on described donor film; With
Reciprocal driver element, described reciprocal driver element is connected with described contact frame, with control described contact frame towards with driving away from described substrate platform.
2. laser induced thermal imaging apparatus as claimed in claim 1, wherein, described magnetisable material be formed on described contact frame on the surface of described substrate platform, perhaps be formed on the opposed surface away from described substrate platform of described contact frame.
3. laser induced thermal imaging apparatus as claimed in claim 1, wherein, described contact frame itself is made of magnetisable material.
4. laser induced thermal imaging apparatus as claimed in claim 1, wherein, described magnet be formed on described acceptor substrate on the surface of described donor film, perhaps be formed on the opposed surface away from described donor film of described acceptor substrate.
5. laser induced thermal imaging apparatus as claimed in claim 1, wherein, described magnet is a permanent magnet.
6. laser induced thermal imaging apparatus as claimed in claim 5, wherein, described permanent magnet forms at least a shape in bar-shaped and cylindric.
7. laser induced thermal imaging apparatus as claimed in claim 5, wherein, described permanent magnet is made of the permanent magnet nano particle.
8. laser induced thermal imaging apparatus as claimed in claim 1, wherein, described magnet is an electromagnet.
9. laser induced thermal imaging apparatus as claimed in claim 8, wherein, described electromagnet forms at least a shape in bar-shaped and cylindric.
10. laser induced thermal imaging apparatus as claimed in claim 1, wherein, described contact frame has the opening that is formed in the zone, and the corresponding donor film in described zone is transferred to the pattern at substrate place.
11. laser induced thermal imaging apparatus as claimed in claim 1, wherein, described reciprocal driver element is controlled the bonding strength between described donor film and the acceptor substrate.
12. laser induced thermal imaging apparatus as claimed in claim 1, wherein, described laser oscillator is arranged in the part of the described chamber on the opposition side of the described substrate platform of leaving of described contact frame.
13. laser induced thermal imaging apparatus as claimed in claim 1, wherein, described process chamber is a vacuum chamber.
14. laser induced thermal imaging apparatus as claimed in claim 1, wherein, described substrate platform has first configured slot, so that described acceptor substrate to be set; And second configured slot, so that described donor film to be set.
15. laser induced thermal imaging apparatus as claimed in claim 14, wherein, described second configured slot is the shape of the described donor film outside the periphery of first configured slot.
16. laser induced thermal imaging apparatus as claimed in claim 1 further comprises:
First placement unit is to place described acceptor substrate on described substrate platform;
Second placement unit is to place described donor film on described substrate platform;
First key is reciprocally to drive described first placement unit; And
Second key is reciprocally to drive described second placement unit.
17. laser induced thermal imaging apparatus as claimed in claim 16 further comprises the end effect device, is used to shift described acceptor substrate to first placement unit and shift described donor film to second placement unit.
18. a laser induced thermal imaging method is used laser induced thermal imaging apparatus as claimed in claim 1, and is comprised:
(a) acceptor substrate is set, wherein magnet is formed at least one surface, and described acceptor substrate is formed with magnetisable material in described contact frame between contact frame and substrate platform;
(b) on described acceptor substrate, donor film is set;
(c) magnetic force by acting between described magnetisable material and described magnet carries out lamination to described donor film and described acceptor substrate;
(d) make described acceptor substrate and described donor film bonded to each other by push described contact frame to described substrate platform; And
(e) by scan laser on described donor film, at least one zone of imaging layer of shifting described donor film is to described acceptor substrate.
19. make method of organic light emitting diodes for one kind, wherein, utilize laser induced thermal imaging apparatus as claimed in claim 1 between first electrode layer and the second electrode lay, to form luminescent layer, this manufacture method comprises:
At the substrate platform with comprise between the contact frame of magnetisable material acceptor substrate is set that wherein said acceptor substrate has pixel region and comprises magnet;
On described acceptor substrate, be provided with and have the donor film of luminescent layer;
Utilize the magnetic force between described magnet and the described magnetisable material, described acceptor substrate and described donor film are connected to each other;
Make described acceptor substrate and described donor film bonded to each other by push described contact frame to described substrate platform; And
By scan laser on described donor film, shift the described pixel region of described luminescent layer to described acceptor substrate.
20. manufacturing method of organic light emitting diodes as claim 19, wherein, on described acceptor substrate, be provided with described donor film comprise have resilient coating, the acceptor substrate of semiconductor layer, gate insulator, gate electrode, interlayer insulative layer, source electrode, drain electrode, cover layer and substrate layer.
21. as the manufacturing method of organic light emitting diodes of claim 20, wherein, described resilient coating is formed on the described substrate, forms the semiconductor layer that comprises active layer and resistance contact layer on a zone of described resilient coating.
22. as the manufacturing method of organic light emitting diodes of claim 21, wherein, described magnet is formed among a kind of between the opposed surface of leaving described resilient coating of described substrate, described substrate and the described resilient coating and in their combination.
23. as the manufacturing method of organic light emitting diodes of claim 19, wherein, described transfer luminescent layer comprises on the opening that shifts the pixels block layer of described luminescent layer to first electrode layer, and shifts the second electrode lay to described pixels block layer.
24. the fixing donor film method to the acceptor substrate is used for laser induced thermal imaging, uses laser induced thermal imaging apparatus as claimed in claim 1, and comprises:
(a) in the described donor film of described acceptor substrate upper support, wherein said acceptor substrate has magnet;
(b) be suitable for lamination magnetic force between described acceptor substrate and contact frame, wherein said donor film is between described acceptor substrate and described contact frame; And
(c) make described acceptor substrate and described donor film bonded to each other by push described contact frame to described substrate platform.
25. the method for fixing donor film as claimed in claim 24 to the acceptor substrate further comprises:
The vacuum chamber of finding time; And
In the described donor film of described acceptor substrate upper support, and in described vacuum chamber, between described acceptor substrate and contact frame, be suitable for lamination magnetic force.
26. make method of organic light emitting diodes for one kind, wherein, utilize laser induced thermal imaging apparatus as claimed in claim 1 between first electrode layer and the second electrode lay, to form luminescent layer, this method comprises:
Have the described donor film of luminescent layer in described acceptor substrate upper support, wherein said acceptor substrate has magnet;
Between the contact frame on described acceptor substrate and the described donor film, be suitable for lamination magnetic force;
Make described acceptor substrate and described donor film bonded to each other by push described contact frame to described substrate platform; And
On described donor film, shift the pixel region of described luminescent layer by irradiating laser to described acceptor substrate.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2005-0109818 | 2005-11-16 | ||
| KR1020050109818A KR100700836B1 (en) | 2005-11-16 | 2005-11-16 | Laser induced thermal imaging apparatus and laser induced thermal imaging method and fabricating method of organic light emitting diode using the same |
| KR1020050109818 | 2005-11-16 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101186160A CN101186160A (en) | 2008-05-28 |
| CN101186160B true CN101186160B (en) | 2011-07-06 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2006101381932A Expired - Fee Related CN101186160B (en) | 2005-11-16 | 2006-11-16 | Laser induced thermal imaging apparatus and laser induced thermal imaging method and fabricating method of organic light-emitting diode using the same |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7502043B2 (en) |
| JP (1) | JP2007141810A (en) |
| KR (1) | KR100700836B1 (en) |
| CN (1) | CN101186160B (en) |
| TW (1) | TWI297309B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7817175B2 (en) * | 2005-08-30 | 2010-10-19 | Samsung Mobile Display Co., Ltd. | Laser induced thermal imaging apparatus and fabricating method of organic light emitting diode using the same |
| KR100711878B1 (en) * | 2005-08-30 | 2007-04-25 | 삼성에스디아이 주식회사 | Laser induced thermal imaging apparatus and Laser induced thermal imaging method |
| US20070063205A1 (en) * | 2005-08-30 | 2007-03-22 | Kang Tae M | Organic light emitting display device |
| JP2007062354A (en) * | 2005-08-30 | 2007-03-15 | Samsung Sdi Co Ltd | Laser thermal transfer donor film, laser thermal transfer apparatus, laser thermal transfer method, and manufacturing apparatus for organic light-emitting element |
| JP2007128845A (en) * | 2005-11-04 | 2007-05-24 | Samsung Sdi Co Ltd | Laser heat transfer device and the laser heat transfer method |
| JP2007128844A (en) * | 2005-11-04 | 2007-05-24 | Samsung Sdi Co Ltd | Laser heat transfer device, laser heat transfer method, and organic light-emitting display element using the same |
| US8404499B2 (en) * | 2009-04-20 | 2013-03-26 | Applied Materials, Inc. | LED substrate processing |
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Also Published As
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| KR100700836B1 (en) | 2007-03-28 |
| US7502043B2 (en) | 2009-03-10 |
| JP2007141810A (en) | 2007-06-07 |
| US20070109391A1 (en) | 2007-05-17 |
| CN101186160A (en) | 2008-05-28 |
| TWI297309B (en) | 2008-06-01 |
| TW200732165A (en) | 2007-09-01 |
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