JP2010140956A - Method of holding semiconductor wafer, dicing method and spacer - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of holding a semiconductor wafer using a spacer capable of being stuck to a back surface inner peripheral part and suppressing the vibration of the wafer during dicing through a dicing sheet which can be closely stuck with excellent followup ability to a wafer back surface where only the back surface inner peripheral part of the wafer is ground, an annular projection is formed at the outer peripheral part and a step is formed between an inner peripheral plane and the annular projection, a dicing method by the holding method, and the spacer used in the holding method. <P>SOLUTION: The dicing sheet 10 is stuck to the back surface of the semiconductor wafer 11 for which a circuit 13 is formed on the surface and the annular projection 17 is formed at the back surface outer peripheral part, and the spacer 40 provided with an adhesive layer 42 is stuck through the dicing sheet 10 to the back surface inner peripheral part of the semiconductor wafer. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a method for holding a semiconductor wafer having a circuit formed on the front surface and an annular convex portion on the outer periphery of the back surface, a semiconductor wafer dicing method using the holding method, and a spacer used in the holding method.

  After a circuit is formed on the surface of the semiconductor wafer, grinding is performed on the back side of the wafer, and a back grinding process for adjusting the thickness of the wafer and a dicing process for dividing the wafer into a predetermined chip size are performed. With the spread of IC cards in recent years, the semiconductor chip that is a constituent member thereof is being made thinner. For this reason, it has been required to reduce the thickness of a conventional wafer having a thickness of about 350 μm to 50 to 100 μm or less. However, as the semiconductor wafer becomes thinner, the risk of breakage increases during processing and transportation.

  Therefore, as shown in FIGS. 3 to 5, when grinding the back surface of the wafer, only the back inner peripheral portion 16 is ground, and the annular convex portion 17 is left on the outer peripheral portion of the back surface to make the wafer rigid. (Patent Documents 1, 2, 3, etc.). As shown in FIG. 3, the surface of the wafer 11 has a surplus portion 15 in which a circuit 13 is not formed within a range of several mm from the outer peripheral end. The circuit 13 is formed on the inner peripheral portion 14 of the wafer excluding the surplus portion. ing. In the wafer having the annular convex portion, the rear inner peripheral portion 16 corresponding to the circuit forming portion (wafer inner peripheral portion 14) on the front surface is ground to a predetermined thickness, and corresponds to the surplus portion 15 where no circuit is formed. The back outer peripheral portion remains without being ground and becomes an annular convex portion 17. Since the annular protrusion 17 has a relatively high rigidity, the wafer 11 ground in the above-described form can be stably transported and stored, and damage during processing is reduced. 4 is a perspective view from the back surface side where the annular convex portion 17 is formed, and FIG. 5 is a cross-sectional view of FIGS.

  When the back surface of the semiconductor wafer as described above is held on the table, a space is formed between the back surface inner peripheral portion 16 and the table. For this reason, it has been proposed to attach a peeling adhesive tape to the surface of a semiconductor wafer and fill the space with a fluid when peeling off the surface protective tape using the peeling adhesive tape (Patent Document 4). .

Further, it has been proposed to attach a die-bonding adhesive film to the inner surface 16 of the back surface of the semiconductor wafer, and then apply a dicing tape to the back surface of the semiconductor wafer for dicing (Patent Document 5).
Japanese Unexamined Patent Publication No. 2007-19379 JP 2007-266352 A JP 2007-287796 JP 2008-34710 A JP 2007-73767

  When dicing a semiconductor wafer, the entire back surface of the wafer is fixed with an adhesive sheet called a dicing sheet, and the outer periphery of the dicing sheet is fixed with a ring frame. Thereafter, dicing is performed along the streets between the circuits while recognizing the circuit pattern from the wafer surface side. During dicing, the wafer is fully cut to create a chip, and the dicing depth is set so as not to cut the dicing sheet. As a result, the generated chip is held on the dicing sheet, and then the chip is picked up by a predetermined means.

  However, when only the inner peripheral portion of the back surface of the wafer is ground as described above and the annular convex portion is left on the outer peripheral portion, there is a space between the inner peripheral portion 16 of the back surface and the dicing sheet. At the portion, the inner periphery of the wafer hangs down, making it difficult to perform dicing. Moreover, even when the space between the back inner peripheral portion 16 and the dicing sheet is filled with a fluid or a die-bonding adhesive film, it is difficult to suppress vibration during dicing, which causes wafer cracking and chipping. It may become.

  Therefore, in the present invention, only the back inner peripheral portion of the wafer is ground, the outer peripheral portion has an annular convex portion, and the wafer rear surface in which a step is formed between the inner peripheral plane and the annular convex portion, A semiconductor wafer holding method using a spacer that can be attached to the inner peripheral portion of the back surface through a dicing sheet that can be adhered and adhered with good followability and can suppress vibration of the wafer during dicing, a dicing method using the holding method, and It aims at providing the spacer used for this holding method. In the present invention, the inner peripheral portion of the back surface of the semiconductor wafer refers to a region surrounded by an annular convex portion formed on the outer peripheral portion of the back surface of the semiconductor wafer.

The gist of the present invention aimed at solving such problems is as follows.
(1) A circuit is formed on the front surface, and a dicing sheet is affixed to the back surface of the semiconductor wafer having an annular convex portion on the back surface outer peripheral portion
A method for holding a semiconductor wafer, comprising attaching a spacer having an adhesive layer to the inner periphery of the back surface of the semiconductor wafer via the dicing sheet.
(2) The method for holding a semiconductor wafer according to (1), wherein the spacer is a pressure-sensitive adhesive body including a base material and a pressure-sensitive adhesive layer formed thereon or a laminate thereof.
(3) A semiconductor wafer dicing method in which the semiconductor wafer is held by the semiconductor wafer holding method of (1) or (2) above, and the semiconductor wafer is singulated.
(4) A spacer formed by laminating a single layer of an adhesive body comprising a base material and an adhesive layer formed thereon or a laminate.

  According to the present invention, only the back inner peripheral portion of the wafer is ground, the outer peripheral portion has an annular convex portion, and the wafer rear surface in which a step is formed between the inner peripheral portion plane and the annular convex portion, A semiconductor wafer holding method using a spacer that can be attached to the inner peripheral portion of the back surface through a dicing sheet that can be adhered and adhered with good followability and can suppress vibration of the wafer during dicing, a dicing method using the holding method, and A spacer used in the holding method is provided.

  Hereinafter, preferred embodiments of the present invention will be described more specifically with reference to the drawings, including the best mode.

  As shown in FIG. 1, the semiconductor wafer holding method of the present invention is a dicing sheet in which a circuit 13 is formed on the front surface and a dicing sheet 10 is attached to the back surface of the semiconductor wafer 11 having an annular convex portion 17 on the outer periphery of the back surface. 10, a spacer 40 having an outer diameter slightly smaller than the inner diameter of the annular convex portion 17 is attached to a region surrounded by the annular convex portion 17. 2 is a spacer of the present invention, FIG. 3 is a plan view of the circuit surface side of a semiconductor wafer 11 having a circuit 13 formed on the front surface and an annular protrusion 17 on the outer periphery of the back surface, and FIG. FIG. 5 is a cross-sectional view of FIG. 4 and FIG. 6 is an enlarged cross-sectional view of a diced portion.

  The semiconductor wafer 11 may be a silicon wafer or a compound semiconductor wafer such as gallium / arsenic. The formation of the circuit 13 on the wafer surface can be performed by various methods including conventionally used methods such as an etching method and a lift-off method. In the circuit forming process of the semiconductor wafer, a predetermined circuit 13 is formed. The circuit 13 is formed in a lattice shape on the surface of the inner peripheral portion 14 of the wafer 11, and a surplus portion 15 in which no circuit is present remains in a range of several mm from the outer peripheral end. The thickness of the wafer 11 before grinding is not particularly limited, but is usually about 500 to 1000 μm.

  At the time of back grinding, an adhesive sheet called a surface protective sheet is attached to the circuit surface in order to protect the circuit 13 on the surface. In the back surface grinding, the circuit surface side (that is, the surface protection sheet side) of the wafer 11 is fixed by a chuck table or the like, and the back surface side where the circuit 13 is not formed is ground by a grinder. At the time of back surface grinding, first, the entire back surface is ground to a predetermined thickness, and then only the back surface inner peripheral portion 16 corresponding to the circuit forming portion (inner peripheral portion 14) on the front surface is ground, and the surplus portion 15 where the circuit 13 is not formed. The back surface area corresponding to is left without being ground. As a result, in the semiconductor wafer 11 after grinding, only the inner peripheral portion 16 on the back surface is further thinly ground, and the annular convex portion 17 remains on the outer peripheral portion. Such back surface grinding can be performed by, for example, a known method described in Patent Documents 1 to 3 described above.

  The total thickness T1 (see FIG. 5) of the annular convex portion 17 is not particularly limited as long as it provides the wafer with the necessary rigidity and does not impair the handling properties, and is generally about 400 to 725 μm. . The width of the annular convex portion is about the width of the surplus portion 15, and is generally about 2 to 5 mm. The thickness T2 of the inner peripheral portion 16 depends on the device design, and is usually about 25 to 200 μm. Therefore, the step (T1-T2) between the plane of the inner peripheral portion 16 and the annular convex portion 17 is about 200 to 700 μm.

  After the back grinding process, a process of removing the crushed layer generated by grinding may be performed. Further, following the back surface grinding step, if necessary, the back surface may be subjected to processing involving heat generation such as etching processing, metal film deposition on the back surface, or processing performed at a high temperature such as organic film baking. . According to the wafer 11 in which only the inner peripheral portion 16 on the back surface is ground to a predetermined thickness and the annular convex portion 17 is provided on the outer peripheral portion, the annular convex portion 17 has high rigidity, so that the wafer is not damaged. , Storage, processing, etc. can be performed.

  After the back surface grinding step, as shown in FIG. 1, the dicing sheet 10 is attached to the grinding surface side of the wafer 11, and the spacer 40 having an outer diameter slightly smaller than the inner diameter of the annular convex portion 17 is interposed via the dicing sheet 10. The wafer 11 is diced by being attached to the area surrounded by the annular protrusion 17. Dicing is performed along dicing streets DS (see FIG. 3) formed on the wafer surface so as to separate the circuits 13 into individual pieces. In addition, the surface protection sheet stuck on the wafer surface may be peeled off before the dicing sheet 10 is stuck, or may be peeled off after the dicing sheet 10 is stuck. Moreover, you may peel a surface protection sheet from the chip | tip surface separated into pieces after completion | finish of a dicing process.

  The dicing sheet 10 is attached to the back surface of the wafer by an apparatus called a mounter (bonding apparatus), but is not particularly limited. In particular, the pasting is preferably performed under vacuum (reduced pressure atmosphere).

  Moreover, in the dicing sheet 10, the sum total of the thickness of the base material 1 and the thickness of the adhesive layer 2 is preferably 0.026 mm to 0.6 mm, more preferably 0.033 to 0.4 mm, and particularly preferably 0. In the range of .04 to 0.25 mm. When the semiconductor wafer 11 is affixed to the dicing sheet 10 and the wafer 11 is diced, the surface layer portion of the dicing sheet 10 may also be cut as shown in FIG. The dicing blade (rotating round blade) 3 has a slightly rounded tip. Therefore, when the wafer is cut from the upper surface to a depth at which only the wafer is cut, the lower end portion of the chip 12 to be generated is cut only by the tip portion of the dicing blade 3 as shown in FIG. As a result, a skirt corresponding to the roundness of the tip of the dicing blade 3 remains at the lower end of the chip 12 (see the portion A in FIG. 6). The skirt is thin and low in strength, which causes chipping.

  For this reason, in the dicing using the dicing blade 3, in order to cut off the lower end portion of the chip 12 vertically, the tip portion of the dicing blade 3 is cut to the surface layer portion of the dicing sheet 10 (part B in FIG. 6). Reference) The inner peripheral portion of the wafer 11 is fully cut. The cutting depth at this time is about half of the thickness of the dicing blade 3.

  Therefore, when the thickness of the dicing sheet 10 is too thin, the dicing sheet 10 is cut as a result of the cutting by the dicing blade 3, and the holding function of the chip 12 is significantly impaired. Even if the dicing sheet 10 is not cut, a groove is cut in the surface of the dicing sheet 10. If the depth of the groove is too deep with respect to the thickness of the dicing sheet 10, the strength of the dicing sheet 10 is increased. descend.

  Although the thickness of the base material 1 is not restrict | limited at all, Preferably it is 25-300 micrometers, More preferably, it is 30-250 micrometers, Especially preferably, it exists in the range of 35-200 micrometers.

  The thickness of the pressure-sensitive adhesive layer 2 is preferably in the range of 1 to 300 μm, more preferably 3 to 150 μm, and particularly preferably 5 to 50 μm. If the thickness of the pressure-sensitive adhesive layer 2 is too thin, sufficient adhesive strength may not be obtained. On the other hand, if the pressure-sensitive adhesive layer 2 is too thick, the wafer may vibrate when the wafer 11 is diced, and chipping may occur.

  The material of the substrate 1 used for the dicing sheet 10 is not particularly limited as long as the above physical properties are satisfied. For example, a low density polyethylene (LDPE) film, a linear low density polyethylene (LLDPE) film, a high density polyethylene (HDPE) ) Film, polypropylene film, polybutene film, polybutadiene film, polymethylpentene film, polyvinyl chloride film, vinyl chloride copolymer film, polyethylene terephthalate film, polybutylene terephthalate film, polyurethane film, ethylene vinyl acetate copolymer film, ionomer Resin film, ethylene / (meth) acrylic acid copolymer film, ethylene / (meth) acrylic acid ester copolymer film, polystyrene film, polycarbonate Film, fluororesin film, and a film composed of the hydrogenated product or modified product, etc. are used. These crosslinked films are also used. The above-mentioned base material may be one kind alone, or may be a composite film in which two or more kinds are combined.

  As will be described later, when the pressure-sensitive adhesive layer 2 is formed of an ultraviolet curable pressure-sensitive adhesive and ultraviolet rays are used as energy rays to be irradiated to cure the pressure-sensitive adhesive, a substrate that is transparent to the ultraviolet rays is used. preferable. In addition, since it does not need to be transparent when using an electron beam as an energy beam, the transparent film which colored these other than said film, an opaque film, etc. can be used.

  Moreover, in order to improve adhesiveness with an adhesive, the upper surface of the base material 1, ie, the base material surface on the side where the adhesive layer 2 is provided, may be subjected to corona treatment or a primer layer. Various coatings may be applied to the surface opposite to the pressure-sensitive adhesive layer 2. The dicing sheet 10 is manufactured by providing a pressure-sensitive adhesive layer on the substrate as described above.

  The pressure-sensitive adhesive layer 2 can be formed of various conventionally known pressure-sensitive adhesives. Such an adhesive is not limited at all, but an adhesive such as rubber-based, acrylic-based, silicone-based, or polyvinyl ether is used. In addition, an energy ray curable adhesive, a heat-foaming adhesive, or a water swelling adhesive can be used. As the energy ray curable (UV curable, electron beam curable, etc.) type adhesive, it is particularly preferable to use an ultraviolet curable adhesive. The pressure-sensitive adhesive layer 2 may be laminated with a release sheet to protect the pressure-sensitive adhesive layer before use.

  The release sheet is not particularly limited. For example, a film made of a resin such as polyethylene terephthalate, polypropylene, or polyethylene or a foamed film thereof, paper such as glassine paper, coated paper, laminated paper, silicone-based, fluorine A system and a release agent such as a long chain alkyl group-containing carbamate can be used.

  The method of providing the pressure-sensitive adhesive layer 2 on the surface of the substrate 1 may be such that the pressure-sensitive adhesive layer 2 applied and formed on the release sheet so as to have a predetermined film thickness may be transferred to the surface of the substrate 1. The pressure-sensitive adhesive layer 2 may be formed by coating directly on the surface.

  The spacer 40 includes a base material 41 and an adhesive layer 42 formed on one surface thereof. In addition, the base material 41 may be formed by laminating a single layer of a resin film described later or a resin film, or may be formed of glass, metal, or the like. The spacer 40 may be formed by laminating an adhesive body in which an adhesive layer is formed on a resin film, glass, metal, or the like. The number of stacked layers is not particularly limited. In FIG. 2, the spacer 40 is, for example, a four-layer structure in which adhesive layers 42a, 42b, 42c, and 42d are formed on resin films 41a, 41b, 41c, and 41d. It consists of a laminate of adhesive films. The material of each layer in the spacer may be the same or different.

  The thickness of the spacer 40 is a relationship between the level difference between the plane of the inner peripheral portion 16 of the semiconductor wafer 11 and the annular convex portion 17 and the sum of the thickness of the substrate 1 and the thickness of the adhesive layer 2 in the dicing sheet 10. Is appropriately selected.

  The outer diameter of the spacer 40 is appropriately selected according to the relationship between the inner diameter of the annular protrusion 17 of the semiconductor wafer 11 and the sum of the thickness of the base material 1 and the thickness of the adhesive layer 2 in the dicing sheet 10.

  The Young's modulus of the spacer 40 is preferably 1 GPa or more, more preferably 1 to 200 GPa, and particularly preferably 1.5 to 4 GPa. When the Young's modulus of the spacer 40 is in the above range, vibrations when dicing the wafer can be suppressed, and wafer cracking and chipping can be prevented.

  When the base material 41 used for the spacer 40 is a resin film, the material is not particularly limited as long as the above physical properties are satisfied. For example, a polyethylene terephthalate film, a polyethylene naphthalate film, a polyimide film, a polypropylene film, a polyvinyl chloride film, A vinyl chloride copolymer film, a polyurethane film, a polystyrene film, a polycarbonate film, a fluororesin film, a film made of a water additive or a modified product thereof, and the like are used. These crosslinked films are also used. The above-mentioned substrate may be a single type, or may be a composite film in which two or more types are combined. Moreover, when the base material 41 used for the spacer 40 is a metal, the material is not particularly limited as long as the physical properties are satisfied, but iron, copper, stainless steel, aluminum, titanium, and alloys thereof are used.

  Further, as will be described later, when the pressure-sensitive adhesive layer 42 is formed of an ultraviolet curable pressure-sensitive adhesive and ultraviolet rays are used as energy rays to be irradiated to cure the pressure-sensitive adhesive, a substrate that is transparent to the ultraviolet rays is used. preferable. In addition, since it does not need to be transparent when using an electron beam as an energy beam, the transparent film which colored these other than said film, an opaque film, etc. can be used.

  Moreover, in order to improve adhesiveness with an adhesive, the top surface of the resin film, that is, the resin film surface on the side where the adhesive layer 2 is provided, may be subjected to corona treatment or a primer layer. Various coating films may be applied to the surface opposite to the pressure-sensitive adhesive layer 42. The spacer 40 is manufactured by providing an adhesive layer on the base material 41 as described above.

  The pressure-sensitive adhesive layer 42 can be formed of various conventionally known pressure-sensitive adhesives. Such an adhesive is not limited at all, but, for example, an adhesive such as rubber, acrylic, silicone, or polyvinyl ether is used in the same manner as the adhesive layer 2 of the dicing sheet 10. In addition, an energy ray curable adhesive, a heat-foaming adhesive, or a water swelling adhesive can be used. As the energy ray curable (UV curable, electron beam curable, etc.) type adhesive, it is particularly preferable to use an ultraviolet curable adhesive. Note that a release sheet may be laminated on the pressure-sensitive adhesive layer 42 in order to protect the pressure-sensitive adhesive layer before use.

  The release sheet is not particularly limited. For example, a film made of a resin such as polyethylene terephthalate, polypropylene, or polyethylene or a foamed film thereof, paper such as glassine paper, coated paper, laminated paper, silicone-based, fluorine A system and a release agent such as a long chain alkyl group-containing carbamate can be used.

  The method of providing the pressure-sensitive adhesive layer 42 on the surface of the base material 41 may transfer the pressure-sensitive adhesive layer formed by coating on the release sheet so as to have a predetermined film thickness to the surface of the base material 41. The pressure-sensitive adhesive layer 42 may be formed by directly applying the adhesive layer.

  Since the spacer 40 satisfies the specific physical properties as described above, when the wafer is diced, it can prevent the inner peripheral portion of the wafer from sagging, suppress vibration, and prevent wafer cracking and chipping.

  The method for dicing the semiconductor wafer 11 is not particularly limited as long as the semiconductor wafer holding method of the present invention is used. As an example, when the wafer 11 is diced, the peripheral portion of the dicing tape 10 is fixed by the ring frame 5 and then the wafer 11 is chipped by a known method such as using a rotating round blade such as the dicing blade 3. . According to the semiconductor wafer holding method of the present invention, the wafer vibration and the chips can be reliably held while dicing is suppressed, so that the yield of chips can be improved and the dicing apparatus can be prevented from being damaged due to scattering of the chips. .

  Next, the chip 12 is picked up from the dicing sheet 10. The spacer 40 may be peeled off before the chip 12 is picked up. When the spacer 40 is peeled off, the pressure-sensitive adhesive layer 42 is preferably formed of an ultraviolet curable pressure-sensitive adhesive, and the pressure-sensitive adhesive layer 42 is irradiated with ultraviolet rays to reduce the pressure-sensitive adhesive force. Further, when the pressure-sensitive adhesive layer 2 of the dicing sheet 10 is formed of an ultraviolet curable pressure-sensitive adhesive, the chip 12 is picked up after the pressure-sensitive adhesive layer 2 is irradiated with ultraviolet rays to reduce the adhesive strength.

  In addition, after the dicing is completed, the chips may be picked up after transferring the chips arranged on the dicing sheet 10 to another adhesive sheet for picking up.

  Thereafter, the picked-up chip 12 is die-bonded and resin-sealed by a conventional method to manufacture a semiconductor device.

  EXAMPLES Hereinafter, although an Example demonstrates this invention, this invention is not limited to these Examples. In the following examples and comparative examples, a silicon wafer having the following shape and the following pressure-sensitive adhesive composition were used. In addition, the Young's modulus and dicing suitability of the spacers in Examples and Comparative Examples were evaluated as follows.

(Wafer shape)
Outer diameter: 150mm
Inner diameter of annular projection: 145mm
Inner peripheral thickness: 100 μm
Annular projection thickness: 400 μm

(Adhesive composition)
A polyvalent isocyanate is used for a 30% by weight toluene solution of an acrylic copolymer (weight average molecular weight 600,000) composed of 80 parts by weight of 2-ethylhexyl acrylate, 10 parts by weight of methyl methacrylate and 10 parts by weight of 2-hydroxyethyl acrylate. 2.5 parts by weight of a compound (Coronate L (manufactured by Nippon Polyurethane)) was mixed to obtain a pressure-sensitive adhesive composition.

(Young's modulus of spacer)
The Young's modulus of the spacer was measured at a tensile speed of 200 mm / min using an autograph manufactured by Shimadzu Corporation in accordance with JIS K7161: 1994 (sample size: 15 mm × 100 mm). In addition, when the spacer was a laminated body, the Young's modulus of the laminated body was measured. The results are shown in Table 1.

(Dicing conditions)
The dicing of the wafer was performed using a dicing machine manufactured by Disco Corporation (model number: DFD651) at a cutting speed of 80 mm / second, a chip size of 5 mm square, and a cutting depth of 50 μm into the dicing sheet (in Example 3, cutting). Depth 20 μm).

(Dicing aptitude)
The presence or absence of chip scattering, wafer cracking, chip end chipping (chipping) during dicing was inspected, and when chips were scattered, the wafer was cracked, or chipping occurred, it was determined as “bad”.

<Example 1>
(Spacer production)
As the resin film (base material), a polyethylene terephthalate (PET) film having a thickness of 50 μm was used, and the pressure-sensitive adhesive composition was applied on the resin film so that the thickness after drying was 25 μm, and then dried (100 ° C., For 1 minute) to obtain an adhesive film (adhesive) having an adhesive layer.

  Subsequently, the adhesive layer of the said adhesive film was bonded together to the resin film of the adhesive film prepared separately. This process was repeated a total of 3 times, and then cut into a circular shape having a diameter of 142 mm to obtain a spacer (adhesive laminate) having a total thickness of 300 μm.

(Production of dicing sheet)
On the PET film (SP-PET3811 (S) (manufactured by Lintec)) having a thickness of 38 μm obtained by subjecting the pressure-sensitive adhesive composition to a silicone-based peeling treatment, the pressure-sensitive adhesive composition was applied so that the thickness after drying was 10 μm and dried (100 ° C. 1 minute) to form an adhesive layer. A polyvinyl chloride film having a thickness of 80 μm was used as the base material, and the pressure-sensitive adhesive layer was bonded to the base material, transferred, and the peeled PET film was peeled off to obtain a dicing sheet having a total thickness of 90 μm.

  The dicing sheet was affixed to the back surface of the wafer, and the adhesive layer of the spacer was affixed to the inner periphery of the back surface of the wafer via the dicing sheet. Next, the wafer was diced by holding the spacer side on a flat chuck table, and chips were picked up. Table 1 shows various physical property values and dicing suitability.

<Example 2>
A spacer and a dicing sheet were obtained and evaluated in the same manner as in Example 1 except that the resin film used for the spacer was a polyimide film. Table 1 shows various physical property values and dicing suitability.

<Example 3>
A spacer and a dicing sheet were obtained and evaluated in the same manner as in Example 2 except that the base material used for the dicing sheet was a polyethylene terephthalate film having a thickness of 25 μm. Table 1 shows the Young's modulus and dicing suitability of the spacer.

<Example 4>
A spacer and a dicing sheet were obtained and evaluated in the same manner as in Example 1 except that the substrate used for the dicing sheet was a polyolefin film having a thickness of 80 μm. Table 1 shows the Young's modulus and dicing suitability of the spacer.

<Comparative Example 1>
A dicing sheet was obtained by the same method as in Example 1 without using a spacer, and was attached to the back surface of the wafer. Next, the wafer was held on a flat chuck table via a dicing sheet, and dicing was performed. Table 1 shows the dicing suitability.

<Comparative example 2>
A dicing sheet was obtained by the same method as in Example 1 without using a spacer, and was attached to the back surface of the wafer. Next, the wafer was held via a dicing sheet on a chuck table on which a metal plate having a shape that fits with the inner peripheral portion of the back surface of the wafer was placed, and dicing was performed. Table 1 shows the dicing suitability.

  When the spacers of Examples 1 to 4 were used, they could be used without any problem even in the dicing process.

  When the spacer of Comparative Example 1 was not used, a space was formed between the inner peripheral portion of the back surface of the wafer and the chuck table, and the inner peripheral portion of the wafer was suspended during dicing, so that dicing could not be performed. Further, when the spacer of Comparative Example 2 was not used, the wafer vibrated during dicing and chipping occurred.

1 shows a chip holding method and a dicing method using the holding method according to the present invention. 1 shows a spacer according to the present invention. The top view of the circuit formation surface of a semiconductor wafer is shown. The perspective view of the semiconductor wafer in which the annular convex part was formed in the back peripheral part is shown. FIG. 5 shows a cross-sectional view of FIG. 4. The expanded sectional view of the part diced is shown.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Base material of dicing sheet 2 ... Adhesive layer 3 of dicing sheet ... Dicing blade 5 ... Ring frame 10 ... Dicing sheet 11 ... Semiconductor wafer (wafer)
12 ... Semiconductor chip (chip)
DESCRIPTION OF SYMBOLS 13 ... Circuit 14 ... Circuit surface inner peripheral part 15 ... Excess part 16 ... Back surface inner peripheral part 17 ... Ring-shaped convex part 40 ... Spacer 41 ... Base material 41a-41h ... Resin film 42 ... Adhesive layer 42a-42d ... Adhesive layer

Claims (4)

A circuit is formed on the front surface, and a dicing sheet is attached to the back surface of the semiconductor wafer having an annular convex portion on the outer peripheral portion of the back surface,
A method for holding a semiconductor wafer, comprising attaching a spacer having an adhesive layer to the inner periphery of the back surface of the semiconductor wafer via the dicing sheet.   The method for holding a semiconductor wafer according to claim 1, wherein the spacer is a pressure-sensitive adhesive body including a base material and a pressure-sensitive adhesive layer formed thereon or a laminate thereof.   A semiconductor wafer dicing method for holding a semiconductor wafer by the semiconductor wafer holding method according to claim 1 or 2 and separating the semiconductor wafer into pieces.   A spacer formed by laminating a single layer or a pressure-sensitive adhesive body comprising a base material and a pressure-sensitive adhesive layer formed thereon.

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