JP2010133854A - Magnetic detection circuit element and magnetic sensor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a magnetic detection circuit element capable of reducing midpoint voltage deviation and achieving satisfactory temperature characteristics of the midpoint voltage by using a simple structure and a manufacturing method. <P>SOLUTION: On a semi-insulating substrate 11, a magnetoresistive element MR1 including a semiconductor film 13A and a magnetoresistive element MR2 including a semiconductor film 13B are formed in a long shape, and an input voltage electrode 14, a ground connection electrode 15, and an output voltage electrode 16 are formed. The ground connection electrode 15 is connected to the semiconductor film 13B via a connection electrode 17B, and the output voltage electrode 16 is connected to the semiconductor films 13A, 13B via a connection electrode 17C. A correction electrode 181 is connected to the connection electrode 17B, and a correction electrode 182 is connected to the connection electrode 17C. The correction electrodes 181, 182 are formed so that a leak resistance Rc1 generated between the respective tips is at a voltage value suppressing the midpoint voltage deviation due to the leak resistance between the ground connection electrode 15 and the output voltage electrode 16. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a magnetic detection circuit element that detects a detected object by a change in magnetic flux density caused by the passage of the detected object, and a magnetic sensor using the same.

  Currently, rotation sensors using magnetism exist among various rotation sensors. And such a rotation sensor has the structure which has arrange | positioned the permanent magnet in the housing | casing, and has arrange | positioned the magnetic detection circuit element which has a magnetoresistive element in the to-be-detected body side of this permanent magnet. In this magnetic detection circuit element, a semiconductor film such as InSb whose resistance value changes due to a change in magnetic flux density is generally formed on a semi-insulating substrate such as Si, and a conductor is formed on the upper surface of the semiconductor film. A magnetoresistive element is formed by forming a plurality of short-circuit electrodes made of The magnetic detection circuit element connects a plurality (for example, a pair) of magnetoresistive elements in series, continues to apply a DC voltage having a constant value to the series circuit, and divides the voltage at the connection point of the plurality of magnetoresistive elements. The voltage is output as a detection voltage signal. Therefore, in such a magnetic detection circuit element, an input voltage electrode for applying a DC voltage, a ground connection electrode for connection to the ground, and an output voltage electrode for outputting a detection voltage signal are semi-insulating. The structure is formed on the substrate.

  Here, as described above, when Si is used as the semi-insulating substrate and InSb is used as the semiconductor film, the resistance value ratio between the semi-insulating substrate and the semiconductor film is small, and the output voltage electrode Is disposed in the vicinity of the input voltage electrode and the ground connection electrode, the current that should flow through the semiconductor film flows through the semi-insulating substrate and a leak current is generated. For this reason, the initial value of the voltage value (hereinafter referred to as “middle point voltage”) of the detection voltage signal obtained from the connection point (middle point) of the magnetoresistive element is a design value based on the premise that no leakage current occurs. The problem of misalignment occurs. Hereinafter, this problem is referred to as “midpoint voltage deviation” becoming large. Furthermore, since the resistance temperature characteristics of the semi-insulating substrate and the resistance temperature characteristics of the semiconductor film are different, there is a problem that the midpoint voltage varies with temperature.

  Therefore, conventionally, in order to solve the problem that the “midpoint voltage deviation” becomes large, in Patent Document 1, the specific resistance and thickness of the Si substrate which is a semi-insulating substrate are regulated, or characteristics different from those of the semi-insulating substrate. By providing this layer or by providing a groove in the semi-insulating substrate, the flow of leak current to the semi-insulating substrate is prevented.

Further, in order to solve the problem relating to the temperature characteristics of the midpoint voltage, in Patent Document 2, impurities are intentionally doped into the semiconductor film so that the change in resistance value due to the temperature of the semiconductor film is reduced.
Japanese Patent Laid-Open No. 9-162459 JP 2005-327859 A

  However, in the configurations and methods shown in Patent Documents 1 and 2, a new layer is inserted into the semi-insulating substrate, physical processing is performed on the semi-insulating substrate, or impurities are doped during the formation of the semiconductor film. Therefore, there arises a problem that the magnetic detection circuit element as a whole cannot be formed easily or cannot be formed unless it goes through a complicated process.

  Accordingly, an object of the present invention is to realize a magnetic detection circuit element capable of reducing the midpoint voltage deviation and improving the temperature characteristics of the midpoint voltage using a simple structure and manufacturing method.

  The magnetic detection circuit element according to the present invention includes a series circuit of a plurality of magnetoresistive circuit elements, an input voltage electrode, a ground connection electrode, an output voltage electrode, and a first connection electrode and a second connection electrode that electrically connect them. A connection electrode and a third connection electrode are formed on one main surface of the semi-insulating substrate. Each of the magnetoresistive elements changes in resistance value according to a change in magnetic flux density. The input voltage electrode is connected to the series circuit by the first connection electrode and applies the detection input voltage to the series circuit. The ground connection electrode connects the series circuit to the ground by the second connection electrode. The output voltage electrode is connected to a connection point between the plurality of magnetoresistive elements constituting the series circuit by the third connection electrode, and outputs a detection voltage based on the voltage division by the plurality of magnetoresistive elements. The magnetic detection circuit element is configured such that a predetermined leakage current flows through the semi-insulating substrate by applying a detection input voltage between the third connection electrode and the first connection electrode or the second connection electrode. A correction electrode is formed.

  In this configuration, a leakage current flows between the output voltage electrode and the ground connection electrode or the input voltage electrode by the correction electrode. In this way, by adding the leakage current due to the formation of the correction electrode in addition to the leakage current generated before the formation of the correction electrode, the influence on the midpoint voltage deviation is changed by the entire leakage current. Here, the correction electrode having a shape that offsets the influence on the midpoint voltage deviation caused by the leak electrode before the correction electrode is formed by using the influence on the midpoint voltage deviation caused by the leak current based on the formation of the correction electrode By using, the midpoint voltage deviation is reduced. Furthermore, since the leak currents are canceled out, the temperature characteristic of the midpoint voltage due to the difference in resistance temperature characteristics between the semi-insulating substrate and the semiconductor film is stabilized. At this time, the correction electrode can be formed at the same time as the patterning of the other electrodes, so that it is easy to form.

  In addition, the correction electrode of the magnetic detection circuit element of the present invention includes a first correction electrode continuous with the third connection electrode and a second correction electrode continuous with the first connection electrode or the second connection electrode. Then, the shape and arrangement position of the correction electrode are determined so that a leakage current flows between the first correction electrode and the second correction electrode.

  In this configuration, a structure that is geometrically continuous with the connection electrode is used as a more specific shape of the correction electrode that intentionally generates the above-described leakage current. This makes it easy to visually determine which connection electrode generates the leak current.

  In addition, the correction electrode of the magnetic detection circuit element of the present invention is an island-shaped correction electrode having a shape that is not continuous with any of the first connection electrode, the second connection electrode, and the third connection electrode. Then, the shape and the arrangement position are determined so that a leakage current flows between the third connection electrode and the first connection electrode or the second connection electrode via the island-shaped correction electrode.

  In this configuration, a structure that is not continuous in shape with respect to the connection electrode is used as a more specific shape of the correction electrode that intentionally generates the above-described leakage current. As a result, there is no restriction on the design that the correction electrode must be geometrically continuous with the connection electrode, and the degree of freedom in design is improved.

  Further, a magnetic sensor of the present invention includes the above-described magnetic detection circuit element, and a housing that is arranged so that the magnetic detection circuit element is on the detected body side with respect to the permanent magnet and one main surface is on the detected body side, A connection conductor provided in the housing and connected to any one of the input voltage electrode, the output voltage electrode, and the ground connection electrode of the magnetic detection circuit element.

  In this configuration, by using the above-described magnetic detection circuit element, a magnetic sensor having a small midpoint voltage deviation and suppressing the influence due to temperature change is realized.

  According to the present invention, it is possible to realize a magnetic detection circuit element having a simple structure and capable of reducing the midpoint voltage deviation and suppressing changes in the midpoint voltage due to temperature without using a complicated manufacturing process.

A magnetic detection circuit element and a magnetic sensor according to a first embodiment of the present invention will be described with reference to the drawings.
FIG. 1A is a plan view showing the configuration of the magnetic detection circuit element 11 of this embodiment, and FIG. 1B is an equivalent circuit diagram for explaining the concept of the magnetic detection circuit element 11. In addition, the circuit part which consists of a dotted line shown to FIG. 1 (A), (B) does not represent the thing in which a tangible member like a discrete component or an electrode pattern was actually installed, but a magnetic detection circuit element 11 indicates that there is a function represented by a dotted line.

  The magnetic detection circuit element 11 includes a semi-insulating substrate 12 having a predetermined thickness with Si, GaAs or the like as a base material. Here, the semi-insulating substrate refers to a semiconductor substrate that exhibits high resistance (specific resistance is several MΩ) in a substrate that does not contain impurities. On one main surface (corresponding to “one main surface” of the present invention) of the semi-insulating substrate 12, semiconductor films 13A and 13B made of InSb, GaAs, NiSb, InAs or the like are formed. The semiconductor films 13A and 13B are formed in a long shape in a plan view, and are arranged so that the long direction is parallel. On the surfaces of the semiconductor films 13A and 13B, short-circuit electrodes made of a conductive material are formed in a predetermined interval pattern along the longitudinal direction. The sensitivity to the change in magnetic flux density due to the passage of the subject through the semiconductor films 13A and 13B, that is, the rate at which the resistance value changes according to the amount of change in the magnetic flux density is set by this short-circuit electrode formation pattern. The magnetoresistive elements MR1 and MR2 are constituted by the semiconductor films 13A and 13B on which the short-circuit electrodes are thus formed. In the following description, a semiconductor film with a short-circuit electrode is simply treated as a semiconductor film unless otherwise specified.

  The input voltage electrode 14, the ground connection electrode 15, and the output voltage electrode 16 are arranged at one end of the semi-insulating substrate 12 (the left end as viewed in FIG. 1A) along the longitudinal direction of the semiconductor films 13 </ b> A and 13 </ b> B. ) To the ground connection electrode 15, the input voltage electrode 14, and the output voltage electrode 16 in this order. Here, the input voltage electrode 14, the ground connection electrode 15, and the output voltage electrode 16 are located outside the formation region of the semiconductor films 13 </ b> A and 13 </ b> B on the semi-insulating substrate 12 and in the region on the semiconductor film 13 </ b> A side. Is formed.

  The input voltage electrode 14 is connected to one end in the longitudinal direction of the semiconductor film 13A by a connection electrode 17A made of a conductive material. The ground connection electrode 15 is connected to one end in the longitudinal direction of the semiconductor film 13B by the connection electrode 17B. The output voltage electrode 16 is connected to the other end in the longitudinal direction of the semiconductor film 13A and the semiconductor film 13B by the connection electrode 17C.

  With this configuration, the magnetic detection circuit element 11 includes the magnetoresistive element MR1 and the magnetoresistive element MR2, as shown by the solid line in FIG. 1B, the input voltage electrode 14 (Vin) and the ground. A circuit configuration is realized in which the connection points of the magnetoresistive elements MR1 and MR2 are connected to the output voltage electrode 16 (Vout) in series with the connection electrode 15 (GND). When a DC voltage of, for example, 5.0 V is applied to the input voltage electrode 14 of the magnetic detection circuit element 11 having such a configuration, the output voltage electrode 16 ideally causes the magnetoresistive element MR1 and the magnetoresistive element MR2. A DC voltage having a voltage value corresponding to the voltage division ratio is output.

  However, as shown in the prior art described above, a leak current flows between adjacent electrodes of the input voltage electrode 14, the ground connection electrode 15, and the output voltage electrode 16. That is, as shown by Rr1 and Rr2 in FIG. 1, the circuit configuration is such that a leak resistor is connected between adjacent electrodes. Accordingly, in terms of an equivalent circuit, as shown in the circuit portion to which the leakage resistances Rr1 and Rr2 in the solid line portion and the dotted line portion in FIG. 1B are connected, the input voltage electrode 14 (Vin) and the ground connection electrode 15 (GND) is connected to the leak resistor Rr1, and a parallel circuit of the magnetoresistive element MR1 and the leak resistor Rr2 is provided between the input voltage electrode 14 (Vin) and the output voltage electrode 16 (Vout). The magnetoresistive element MR2 is connected between the output voltage electrode 16 (Vout) and the ground connection electrode 15 (GND).

  Therefore, in the magnetic detection circuit element 11 of the present embodiment, the first correction electrode 181 formed of a line-shaped electrode continuous in shape with respect to the connection electrode 17B and the shape of the connection electrode 17C are continuous in shape. A second correction electrode 182 made of a line electrode is formed on the semi-insulating substrate 12. The first correction electrode 181 and the second correction electrode 182 are opposite to the formation region of the input voltage electrode 14, the ground connection electrode 15, and the output voltage electrode 16 across the formation region of the semiconductor films 13A and 13B. It is formed in the area.

  The first correction electrode 181 includes a partial line electrode 181A that is continuous in shape with respect to the connection electrode 17B and extends in a direction orthogonal to the longitudinal direction of the semiconductor films 13A and 13B. Further, the first correction electrode 181 includes a partial line electrode 181B that is continuous in shape with respect to the partial line electrode 181A and extends along the longitudinal direction.

  The second correction electrode 182 includes a partial line electrode 182A that is continuous in shape with respect to the connection electrode 17C and extends in a direction orthogonal to the longitudinal direction. The second correction electrode 182 includes a partial line electrode 182B that is continuous in shape with respect to the partial line electrode 182A and extends along the longitudinal direction.

  An end portion of the first correction electrode 181 opposite to the connection electrode 17B and an end portion of the second correction electrode 182 opposite to the connection electrode 17C are separated from each other by a predetermined interval. This interval is such that a leakage current flows between the first correction electrode 181 and the second correction electrode 182 in a state in which the detection input voltage is applied from the input voltage electrode 14, and the leakage resistance Rc1 is generated. Set to distance. As a result, the circuit configuration is such that a new leak resistor Rc1 is inserted between the connection electrodes 17B and 17C, that is, between the ground connection electrode 15 (GND) and the output voltage electrode 16 (Vout).

  That is, as shown in FIG. 1B, a parallel circuit of a magnetoresistive element MR1 and a leakage resistor Rr2 is connected between the input voltage electrode 14 (Vin) and the output voltage electrode 16 (Vout). A parallel circuit of the magnetoresistive element MR2 and the leakage resistor Rc1 is connected between the output voltage electrode 16 (Vout) and the ground connection electrode 15 (GND), and the input voltage electrode 14 (Vin) and ground connection are connected. The leakage resistance Rr1 is connected to the electrode 15 (GND).

  Here, the shapes of the first correction electrode 181 and the second correction electrode 182 are set so that the voltage division ratio between the leakage resistance Rr2 and the leakage resistance Rc1 matches the voltage division ratio between the magnetoresistive elements MR1 and MR2. Set the formation position. For example, if the resistance values of the magnetoresistive elements MR1 and MR2 match, the first correction electrode 181 and the second correction electrode 181 so that the resistance value of the leak resistance Rr2 matches the resistance value of the leak resistance Rc1. The shape and formation position of the electrode for use 182 are set. Thereby, the midpoint voltage deviation due to the leak resistance Rr2 caused by the electrode pattern in the state where the first correction electrode 181 and the second correction electrode 182 are not formed can be suppressed and reduced. At this time, the series combined resistance value of the leak resistance Rr2 and the leak resistance Rc1 is preferably set to a value (for example, 100 times or more) significantly larger than the series combined resistance value of the magnetoresistive elements MR1 and MR2. As a result, the current due to the DC voltage applied from the input voltage electrode 14 flows mainly to the magnetoresistive elements MR1 and MR2, but does not flow to the parallel circuit of the leak resistor Rr2 and the leak resistor Rc1 side. Therefore, it is possible to detect a change in magnetic flux density without reducing the detection sensitivity.

  Thus, by using the configuration of the present embodiment, it is possible to realize a magnetic detection circuit element that can suppress the midpoint voltage deviation to a small level and suppress the temperature change of the midpoint voltage. At this time, detection can be performed without lowering the detection sensitivity by appropriately setting the resistance value of each leak resistance by the correction electrode. Further, the correction electrode can be formed of the same material as the input voltage electrode, the output voltage electrode, the ground connection electrode, and the connection electrode, and is formed of an electrode pattern formed on one main surface of the semi-insulating substrate 12. Since it can be regarded as a part, it can be patterned simultaneously with the input voltage electrode, the output voltage electrode, the ground connection electrode, and the connection electrode, and can be formed with a simple structure and a simple manufacturing method.

  Further, since each of the correction electrodes 181 and 182 is continuous in shape with respect to the connection electrode 17B connected to the ground connection electrode 15 and the connection electrode 17C connected to the output voltage electrode 16, the correction electrode It can be easily determined visually that 181 and 182 generate a leak current between the ground connection electrode 15 and the output voltage electrode 16. That is, if the configuration of the present embodiment is used, when a leak resistance is inserted between any one of the input voltage electrode 14 and the ground connection electrode 15 and the output voltage electrode 16, it is possible to easily determine visually. If the electrodes that require leakage resistance are known, the correction electrode can be easily designed. Further, since the correction electrode is formed by a line electrode and the leak resistance is set by the distance between the tips of the line electrodes, the leak resistance can be adjusted by a simple method of changing the distance between the tips.

  The correction electrode shown in the present embodiment is an example, and may be other shapes as long as the shape is continuous in shape with respect to the connection electrode and a predetermined leak resistance can be obtained.

  Such a magnetic detection circuit element 11 is mounted on a magnetic sensor 1 as shown in FIG.

  FIG. 2 is a side view showing the main configuration of the magnetic sensor 1 and is shown in a sectional view for easy understanding of the structure.

  The magnetic sensor 1 includes a substantially rectangular parallelepiped housing 2 made of an insulating material, and a permanent magnet 3 is installed in the housing 2. The above-described magnetic detection circuit element 11 is disposed on the detection target side of the permanent magnet 3. The magnetic detection circuit element 11 is arranged so that the surface (one main surface) on which the magnetoresistive elements MR1 and MR2 are formed is opposite to the permanent magnet 3 with respect to the semi-insulating substrate 12. An input voltage electrode, an output voltage electrode, and a ground connection electrode (not shown in FIG. 2) of the magnetic detection circuit element 11 are connected to the external connection terminal 5 by a connection conductor 6.

  An insulating sheet 7 is provided on the upper surface of one main surface of the magnetic detection circuit element 11 to electrically insulate each part on the main surface of the magnetic detection circuit element 11 from the cover 4. The cover 4 has a shape that covers each member constituting the magnetic sensor 1.

  Thus, by using the magnetic detection circuit element having the above-described configuration, a magnetic sensor with a small midpoint voltage deviation and a suppressed midpoint voltage temperature can be realized with a simple structure.

Next, a magnetic detection circuit element according to a second embodiment will be described with reference to the drawings.
FIG. 3A is a plan view showing the configuration of the magnetic detection circuit element 21 of the present embodiment, and FIG. 3B is an equivalent circuit diagram for explaining the concept of the magnetic detection circuit element 21. It is.
The magnetic detection circuit element 21 of this embodiment is different only in the shape of the correction electrode, and the other configuration is the same as that of the magnetic detection circuit element 11 shown in the first embodiment. Therefore, in the present embodiment, only the portion related to the correction electrode will be described.

  In the magnetic detection circuit element 21 of the present embodiment, the island-shaped third correction electrode 191 separated by a predetermined distance from the connection electrode 17B and the island-shaped third electrode separated by a predetermined distance from the connection electrode 17C. Four correction electrodes 192 are formed on the semi-insulating substrate 12. At this time, the third correction electrode 191 and the fourth correction electrode 192 form the input voltage electrode 14, the ground connection electrode 15, and the output voltage electrode 16 formation region with the formation regions of the semiconductor films 13A and 13B interposed therebetween. It is formed in the area on the opposite side.

  The third correction electrode 191 has a rectangular shape and is formed at a position separated from the connection electrode 17B by a predetermined distance. At this time, the distance and positional relationship between the third correction electrode 192 and the connection electrode 17B are set such that a leak current flows between the connection electrode 17B and the third correction electrode 191 and a leak resistance Rc22 is generated. ing.

  The fourth correction electrode 192 has a rectangular shape and is formed at a position separated from the connection electrode 17C by a predetermined distance. At this time, the distance and the positional relationship between the fourth correction electrode 192 and the connection electrode 17C are set such that a leak current flows between the connection electrode 17C and the fourth correction electrode 192 and a leak resistance Rc23 is generated. ing.

  The third correction electrode 191 and the fourth correction electrode 192 are set such that a leak current flows between these electrodes and a leak resistance Rc21 is generated.

  With such a configuration, a series circuit of new leakage resistors Rc22, Rc21, and Rc23 between the connection electrodes 17B and 17C, that is, between the ground connection electrode 15 (GND) and the output voltage electrode 16 (Vout). The circuit configuration is inserted.

  That is, as shown in FIG. 3B, a parallel circuit of a magnetoresistive element MR1 and a leakage resistor Rr2 is connected between the input voltage electrode 14 (Vin) and the output voltage electrode 16 (Vout). Between the output voltage electrode 16 (Vout) and the ground connection electrode 15 (GND), a parallel circuit of a magnetoresistive element MR2 and a series resistance circuit of leakage resistors Rc22, Rc21, Rc23 is connected, and the input voltage electrode 14 (Vin) and the ground connection electrode 15 (GND) are connected to the leak resistor Rr1.

  Here, the third correction electrode 191 and the second correction electrode 191 are arranged so that the voltage dividing ratio between the leakage resistance Rr2 and the series resistance circuit of the leakage resistances Rc22, Rc21, and Rc23 matches the voltage dividing ratio between the magnetoresistive elements MR1 and MR2. The shape and formation position of the 4 correction electrode 192 are set. For example, if the resistance values of the magnetoresistive elements MR1 and MR2 match, the resistance value of the leak resistance Rr2 and the combined resistance value of the series resistance circuit of the leak resistances Rc22, Rc21, and Rc23 are matched. The shapes and formation positions of the third correction electrode 191 and the fourth correction electrode 192 are set. Thereby, the midpoint voltage deviation due to the leakage resistance Rr2 caused by the electrode pattern in the state where the third correction electrode 191 and the fourth correction electrode 192 are not formed can be suppressed and reduced. At this time, the series combined resistance value of the leak resistance Rr2 and the series resistance circuit of the leak resistances Rc22, Rc21, and Rc23 is significantly larger than the series combined resistance value of the magnetoresistive elements MR1 and MR2 (for example, 100 times). Above). Thereby, the current due to the DC voltage applied from the input voltage electrode 14 mainly flows to the magnetoresistive elements MR1 and MR2, but does not flow to the series circuit side of the leak resistance Rr2 and the leak resistances Rc22, Rc21, and Rc23. Therefore, it is possible to detect a change in magnetic flux density without reducing the detection sensitivity.

  Thus, by using the configuration of the present embodiment, it is possible to realize a magnetic detection circuit element that can suppress the midpoint voltage deviation to a small level and suppress the temperature change of the midpoint voltage. At this time, detection can be performed without lowering the detection sensitivity by appropriately setting the resistance value of each leak resistance by the correction electrode. Further, the correction electrode can be formed of the same material as the input voltage electrode, the output voltage electrode, the ground connection electrode, and the connection electrode, and is formed of an electrode pattern formed on one main surface of the semi-insulating substrate 12. Since it can be regarded as a part, it can be patterned simultaneously with the input voltage electrode, the output voltage electrode, the ground connection electrode, and the connection electrode, and can be formed with a simple structure and a simple manufacturing method.

  Furthermore, each of the correction electrodes 191 and 192 has an island shape that is geometrically separated from the other electrodes on the semi-insulating substrate 12, and thus has a higher degree of design freedom than the case where it must be connected to the other electrodes. improves.

  Note that the correction electrode shown in the present embodiment is an example, and any other shape may be used as long as it is not continuous in shape with respect to the connection electrode and a predetermined leak resistance can be obtained. In the description of the present embodiment, the correction electrode having a rectangular island shape is taken as an example, but other shapes may be used as long as the above-described leakage resistance is obtained.

  In the above description, the example in which the magnetic detection circuit element 11 is mounted on the magnetic sensor 1 is shown. Of course, even if the magnetic detection circuit element 21 shown in the second embodiment is mounted, the same operation as the magnetic sensor is performed. An effect can be obtained.

  In the above description, an example is shown in which either a correction electrode that is geometrically continuous with respect to the connection electrode or a correction electrode that is spaced apart from the connection electrode is used. The leakage resistance may be obtained.

  In the above description, the magnetic detection circuit element with one detection voltage output is shown as an example. However, the magnetic detection circuit element that can obtain a plurality of detection voltages with respect to one input voltage, that is, magnetic The above-described effects can be obtained by applying each of the above-described configurations also to a magnetic detection circuit element in which a plurality of differential voltage output circuits using a series circuit of resistance elements are formed in parallel.

FIG. 2 is a plan view showing the configuration of the magnetic detection circuit element 11 of the first embodiment and an equivalent circuit diagram for explaining the concept of the magnetic detection circuit element 11. 1 is a side view showing a main configuration of a magnetic sensor 1. FIG. FIG. 6 is a plan view showing a configuration of a magnetic detection circuit element 21 according to a second embodiment and an equivalent circuit diagram for explaining the concept of the magnetic detection circuit element 21.

Explanation of symbols

1-magnetic sensor, 2-housing, 3-permanent magnet, 4-cover, 5-terminal for external connection, 6-connection conductor, 7-insulating sheet,
11, 21-magnetic detection circuit element, 12, 22-semi-insulating substrate, 13A, 13B-semiconductor film, 14-electrode for input voltage, 15-electrode for ground connection, 16-electrode for output voltage, 17A-17C- Connection electrode, 181, 182, 191, 192-correction electrode

Claims (4)

A series circuit of a plurality of magnetoresistive elements whose resistance values change in accordance with a change in magnetic flux density; an input voltage electrode connected to the series circuit by a first connection electrode and applying a detection input voltage to the series circuit; The second connection electrode is connected to a ground connection electrode for connecting the series circuit to the ground, and the third connection electrode is connected to a connection point between a plurality of magnetoresistive elements constituting the series circuit, and the plurality of magnetic connections An output voltage electrode for outputting a detection voltage based on a voltage division by a resistance element, and a magnetic detection circuit element formed on one main surface of a semi-insulating substrate,
A correction circuit formed such that a predetermined leakage current flows between the third connection electrode and the first connection electrode or the second connection electrode through the semi-insulating substrate by applying the detection input voltage. Magnetic detection circuit element having electrodes. The correction electrode is
A first correction electrode continuous to the third connection electrode; and a second correction electrode continuous to the first connection electrode or the second connection electrode;
The magnetic detection circuit element according to claim 1, wherein the magnetic detection circuit element is determined by a shape and an arrangement position so that the leakage current flows between the first correction electrode and the second correction electrode. The correction electrode is
An island-shaped correction electrode having a shape that is not continuous with any of the first connection electrode, the second connection electrode, and the third connection electrode;
The shape and the arrangement position are determined so that the leakage current flows between the third connection electrode and the first connection electrode or the second connection electrode via the island-shaped correction electrode. The magnetic detection circuit element according to claim 1 or 2. While comprising the magnetic detection circuit element according to any one of claims 1 to 3,
A case in which the magnetic detection circuit element is disposed on the detected object side with respect to the permanent magnet so that the one main surface is on the detected object side;
A magnetic sensor comprising a connection conductor provided in the housing and connected to any one of the input voltage electrode, the output voltage electrode, and the ground connection electrode of the magnetic detection circuit element.

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