JP2010129870A - Semiconductor light-emitting device, and method of manufacturing same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device capable of assuring a high solder joint strength in substrate mounting, and to provide a method of manufacturing the same, capable of manufacturing the semiconductor light-emitting device with high productivity. <P>SOLUTION: The semiconductor light-emitting device includes slopes crossing each of mutually opposite sides rising from a recess provided in a top surface side of a Si substrate 1 with a crystalline plane (100) and a backside, and an electrode pattern connected to electrodes of the semiconductor light-emitting device mounted in the recess extends to the slopes via the through-holes and the backside. When the semiconductor light-emitting device is mounted by solder on the semiconductor light-emitting device where wiring patterns 22a and 22b are already formed, solder fillets 24 are formed between the wiring pattern 22a and a slope 12a of a back electrode pattern 13a, and between the wiring pattern 22b and a slope 12b of a back electrode pattern 13b. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a semiconductor light emitting device and a manufacturing method thereof, and more particularly to a semiconductor light emitting device in which a semiconductor light emitting element is mounted on a processed Si substrate and a manufacturing method thereof.

  Conventionally, a semiconductor light emitting device of this type has been proposed as shown in FIG. That is, a concave portion 51 is formed on one surface side of a flat Si substrate 50, and insulating films 52 and 53 are formed on the concave surface including the inner peripheral surface of the concave portion 51 and on the opposite surface. Then, two conductive reflective films 54 a and 54 b that are separated and independent from each other are formed on the insulating film 52 on the concave portion 51 side, and two conductive films that are separated and independent from each other are formed on the insulating film 53 on the opposite side of the concave portion 51. Two electrode patterns 55a and 55b are formed.

  The reflective film 54a and the electrode pattern 55a, and the reflective film 54b and the electrode pattern 55b are electrically connected by conductive via holes 56a and 56b penetrating the Si substrate 50, respectively, on one reflective film 54a located at the bottom of the recess 51. The LED chip 57 is placed so that the reflective film 54a and the lower electrode of the LED chip 57 are electrically connected, and one end of the LED film 57 is placed on the other reflective film 54b located at the bottom of the recess 51. The other end of the bonding wire 58 connected to the upper electrode of the chip 57 is connected, and the reflection film 54 b and the upper electrode of the LED chip 57 are electrically connected via the bonding wire 58.

Further, the recess 51 is filled with a sealing resin 59, and the LED chip 57 and the bonding wire 58 are resin-sealed (see, for example, Patent Document 1).
US Pat. No. 6,531,328

  When the semiconductor light emitting device 60 having the above configuration is mounted on the semiconductor light emitting device mounting substrate 61, for example, as shown in FIG. 7, the wiring patterns 61a and 61b on the semiconductor light emitting device mounting substrate 61 and the Si of the semiconductor light emitting device 60 are arranged. The electrode patterns 55a and 55b formed on the substrate 50 are joined with the solder 62 to achieve electrical conduction between them.

  By the way, the semiconductor light-emitting device having the above-described configuration sequentially forms a plurality of recesses by processing a Si substrate, forms an insulating film, a reflective film and an electrode pattern on the Si substrate formed with the recesses, and installs LED chips in each recess. A large number of semiconductor light-emitting devices are manufactured through the steps of mounting and aerial wiring of bonding wires, and filling of the sealing resin into the recesses, and finally cut into individual semiconductor light-emitting devices by cutting in a dicing process. Is done.

  For this reason, each side surface of each individual semiconductor light emitting device becomes a cut surface in the dicing process, and it is difficult to form an electrode pattern (external electrode) on the side surface. Therefore, it is difficult to form a solder fillet when the semiconductor light emitting device is solder-mounted on the semiconductor light emitting device mounting substrate, and the solder joint strength of the semiconductor light emitting device to the semiconductor light emitting device mounting substrate is weak.

  Therefore, it is conceivable to provide external electrodes on the side surfaces of the individual semiconductor light emitting devices after being singulated, but this requires a new manufacturing process for forming the side electrode patterns, which increases man-hours. This will cause a decrease in productivity.

  The present invention was devised in view of the above problems, and its object is to manufacture a semiconductor light emitting device capable of ensuring high solder joint strength when mounting on a substrate, and to manufacture the semiconductor light emitting device with high productivity. An object of the present invention is to provide a manufacturing method capable of achieving the above.

  In order to solve the above-mentioned problem, the invention described in claim 1 of the present invention is characterized in that a Si substrate having a crystal plane (100) has a recess formed on the surface side of the (100) plane, and (100 A plurality of through-holes reaching from the bottom surface of the surface to the back surface of the (100) surface, and at least a pair of inclined surfaces rising from the back surface and facing each other and intersecting each of the side surfaces substantially perpendicular to the surface, A semiconductor light emitting element is mounted in the recess, and each electrode pattern connected to each electrode of the semiconductor light emitting element is separated and independent from each other, and extends to the inclined surface through the through hole and the back surface. It is characterized by being.

  According to a second aspect of the present invention, in the first aspect, an insulating film is provided at least between the Si substrate and each of the electrode patterns.

  Moreover, the invention described in claim 3 of the present invention is that, in any one of claims 1 and 2, the recess is filled with a sealing resin, and the sealing resin is a translucent resin or It consists of translucent resin in which 1 or more types of fluorescent substance were disperse | distributed.

In the invention described in claim 4 of the present invention, a plurality of recesses are formed on the surface side of the (100) plane by performing anisotropic etching depending on the plane orientation on the Si substrate of the crystal plane (100). A plurality of through-holes reaching the back surface of the (100) surface from the bottom surface of the (100) surface of the recess and a groove portion having a substantially trapezoidal cross section that gradually becomes narrower from the back surface side toward the front surface side. And a process of
Forming insulating films on both sides of the Si substrate;
Forming a plurality of electrode patterns separated and independent from each other on the insulating film, extending from the inner surface of the concave portion to the side surface of the groove portion through the through hole and the back surface;
Mounting a semiconductor light emitting element in the recess and filling a sealing resin in the recess;
And a step of cutting into individual pieces by dicing with the cross section taken as a (110) plane along the bottom surface of the (100) plane of the groove.

  Further, the invention described in claim 5 of the present invention is characterized in that, in claim 4, the width of the bottom surface of the groove is formed wider than the width of the blade used during the dicing. .

  The invention described in claim 6 of the present invention is characterized in that, in any one of claims 4 and 5, the solution used for the anisotropic etching is a TMAH solution or a KOH solution. is there.

  On the Si substrate of the crystal plane (100), each of a concave portion on the front surface side, a plurality of through holes reaching from the bottom surface of the concave portion to the back surface, and an inclined surface that rises from the back surface and intersects each of the side surfaces facing each other, A semiconductor light emitting element was mounted in the recess and each electrode pattern separated from each other and connected to each electrode of the semiconductor light emitting element was extended to the inclined surface through the through hole and the back surface.

  As a result, when this semiconductor light-emitting device is solder-mounted on the semiconductor light-emitting device mounting substrate, between the wiring pattern previously formed on the semiconductor light-emitting device mounting substrate and the electrode pattern located on the inclined surface of the semiconductor light-emitting device. A solder fillet is formed to increase the solder joint strength between the two patterns, and the mounting reliability of the semiconductor light emitting device with respect to the substrate for mounting the semiconductor light emitting device is increased.

  In addition, in the manufacturing process of the semiconductor light emitting device, when the semiconductor light emitting device is solder mounted on the semiconductor light emitting device mounting substrate, an inclination is formed where an electrode pattern for forming a solder fillet with the wiring pattern of the semiconductor light emitting device mounting substrate is located. A plurality of recesses on the surface side formed by subjecting the Si substrate of the crystal plane (100) to anisotropic etching depending on the plane orientation, and a plurality of through holes reaching the back surface from the bottom surface of the recesses At the same time, a groove having a substantially trapezoidal cross section that gradually narrows from the back side toward the front side is formed on the back side.

  As a result, it is possible to form the semiconductor light emitting device without providing a special process separately in the manufacturing process, and to manufacture a semiconductor light emitting device with high mounting reliability without causing a decrease in productivity due to an increase in man-hours.

  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to FIGS. The embodiments described below are preferable specific examples of the present invention, and thus various technically preferable limitations are given. However, the scope of the present invention particularly limits the present invention in the following description. Unless stated to the effect, the present invention is not limited to these embodiments.

  1 to 3 are schematic explanatory views of an embodiment of a semiconductor light emitting device according to the present invention, in which FIG. 1 is a top view, FIG. 2 is a cross-sectional view taken along the line AA in FIG.

  A concave portion 3 is formed on one (100) plane (front surface) 2 side of the Si substrate 1 of the crystal plane (100), and from the other (100) plane (back surface) 4 to the bottom surface 3a of the (100) plane of the concave portion 3. Two reaching grooves 5a and 5b are provided. The through-grooves 5a and 5b have a substantially trapezoidal cross section that gradually becomes narrower from the back surface 4 side of the Si substrate 1 toward the bottom surface 3a side of the recess 3.

  Further, on the side of the ridge formed by each of a pair of (110) side surfaces 6a and 6b facing each other and the back surface 4 of the Si substrate 1, side surfaces 6a rising from the back surface 4 of the Si substrate 1 and facing each other. Inclined surfaces 7a and 7b intersecting 6b are formed.

  An insulating layer 8 is provided on the surface 2 side surface and the back surface 4 side surface including the inside of the recess 3 and the through grooves 5 a and 5 b of the Si substrate 1. At this time, the through grooves 5a and 5b are not blocked by the insulating layer 8 formed in the through grooves 5a and 5b, and the through state is maintained as it is.

  On the insulating film 8 on the surface 2 side of the Si substrate 1, surface electrode patterns 11a and 11b that are separated from each other and extend from the inner bottom portions 9a and 9b of the recess 3 to the inner portions 10a and 10b are formed. On the insulating film 8, back surface electrode patterns 13a and 13b extending inward from the inclined portions 12a and 12b are formed, respectively. Through hole electrode patterns 14a and 14b are formed on the insulating film 8 in the respective through grooves 5a and 5b. Is formed.

  The surface electrode pattern 11a on the front surface 2 side of the Si substrate 1 and the back surface electrode pattern 13a on the back surface 4 side are electrically conductive because the through hole electrode pattern 14a in the through groove 5a functions as a through hole. Similarly, the surface electrode pattern 11b on the front surface 2 side of the Si substrate 1 and the back surface electrode pattern 13b on the back surface 4 side are electrically conductive because the through-hole electrode pattern 14b in the through groove 5b functions as a through-hole. Yes. The through groove 5a may be closed by the surface electrode pattern 11a or the through-hole electrode pattern 14a. Similarly, the through groove 5b may be blocked by the surface electrode pattern 11b or the through-hole electrode pattern 14b.

  On the surface electrode pattern 11a located on the inner bottom portion 9a in the recess 3, a semiconductor light emitting element 15 having a pair of electrodes on the top is fixed via an adhesive (not shown). One of the upper electrodes and the surface electrode pattern 11 a are electrically connected via bonding wires 16. The other of the upper electrodes of the semiconductor light emitting element 15 is connected to a surface electrode pattern 11b located on the inner bottom portion 9b in the recess 3 through a bonding wire 16 so as to be electrically connected.

  The recess 3 is filled with a sealing resin 17, and the semiconductor light emitting element 15 and the bonding wire 16 are sealed with resin. The sealing resin 17 is made of a translucent resin such as an epoxy resin or a silicone resin, or a translucent resin in which one or more phosphors are dispersed.

  The above is the description of the structure of the semiconductor light-emitting device of the present invention. When this semiconductor light emitting device is mounted on a substrate for mounting a semiconductor light emitting device, the result is as shown in FIG.

  The back surface electrode patterns 13a and 13b on the back surface 4 side of the semiconductor light emitting device 21 are opposed to the wiring patterns 22a and 22b formed separately in advance in the mounting region of the semiconductor light emitting device 21 of the semiconductor light emitting device mounting substrate 20, respectively. Then, the wiring pattern 22a and the back electrode pattern 13a, and the wiring pattern 22b and the back electrode pattern 13b are joined by the solder 23 to achieve electrical conduction, and the semiconductor light emitting device 21 is fixed on the semiconductor light emitting device mounting substrate 20. ing.

  At this time, the solder 23 is located between the wiring pattern 22a and the back electrode pattern 13a and between the wiring pattern 22b and the back electrode pattern 13b, and in particular, between the wiring pattern 22a and the inclined portion 12a of the back electrode pattern 13a, and A solder fillet 24 is formed between the wiring pattern 22b and the inclined portion 12b of the back electrode pattern 13b.

  Therefore, by forming the solder fillet 24, as shown in the conventional example, the cut surface in the dicing process is used as it is as a side surface, and a wiring pattern is not provided on the side surface. The strength of solder bonding between the pattern 22a and the back electrode pattern 13a and the solder bonding between the wiring pattern 22b and the back electrode pattern 13b is increased, and the mounting reliability of the semiconductor light emitting device 21 with respect to the semiconductor light emitting device mounting substrate 20 can be increased.

  Further, since the electrode pattern is not formed on the side surface located above the inclined portions 12a and 12b of the semiconductor light emitting device 21, the contamination of the side surface due to the solder rising when the semiconductor light emitting device 21 is solder mounted on the semiconductor light emitting device mounting substrate 20. It is possible to secure a good-looking mounting state.

  Next, a method for manufacturing the semiconductor light emitting device having the above configuration will be described with reference to the manufacturing process diagram of FIG.

  First, in the step (a), an Si substrate 30 having a crystal plane (100) is prepared, and the surface is oxidized to form an oxide film 31 on the entire surface.

  Next, in the step (b), after a photoresist film is formed on the oxide films 31 on both (100) surfaces of the Si substrate 30, the Si substrate 30 on the crystal surface (100) is formed in a later step by a photolithography process. On the other hand, the resist mask 32 is formed by removing the region where the anisotropic etching depending on the plane orientation is performed.

  Next, in the step (c), the oxide film 31 in a region other than the region covered with the resist mask 32 is removed by etching with an etchant such as hydrofluoric acid, and then the resist mask 32 is completely removed with a solvent such as an organic solvent. To do.

  Next, in step (d), TMAH (tetrahydroxide hydroxide) is applied to the Si substrate 30 in a region other than the region covered with the resist mask 33 using the oxide film 31 remaining in the step (c) as a resist mask. Anisotropic etching is performed with a methylammonium) solution. By this step, the recessed portion 3, the through grooves 5a and 5b, and the inclined surfaces 7a and 7b in the finished product are formed (see FIG. 2). The bottom surface 3a of the recess 3 is a (100) plane.

  In this step, the bottom surface 37a of the (100) surface of the groove portion 37 that forms the inclined surfaces 7a and 7b is sufficient with respect to the blade width of the blade so that the blade does not touch the inclined surfaces 7a and 7b during dicing in the subsequent process. It is necessary to form in a width with a margin.

  Next, in step (e), the surface of the Si substrate 30 is again oxidized to form an oxide film 31 on the entire surface.

  Next, in the step (f), after a photoresist film is formed on the oxide films 31 on both sides of the Si substrate 30, a region where an electrode pattern is to be formed in a later step is peeled off by a photolithography process to form a resist mask 34. Form.

  Next, in the step (g), a metal film 35 is formed on the oxide film 31 and the resist mask 34 on both surfaces of the Si substrate 30 by sputtering or vapor deposition.

  Next, in the step (h), the resist mask 34 is completely removed. At this time, the metal film 35 located on the upper surface of the resist mask 34 is also removed along with the removal of the resist mask 34, and the metal film 35 remaining on the insulating film 31 is replaced with the surface electrode patterns 11a and 11b and the back electrodes 13a and 13b in the finished product. Through-hole electrodes 14a and 14b (see FIG. 2).

  Next, in the step (i), the semiconductor light emitting element 15 is bonded to the surface electrode pattern 11a made of the metal film 35 located on the inner bottom portion of the recess 3 formed by anisotropic etching (not shown). The upper electrode of the semiconductor light emitting element 15 and the surface electrode pattern 11a are electrically connected via the bonding wire 16, and the other upper electrode of the semiconductor light emitting element 15 and the surface electrode pattern 11b are bonded. Electrical connection is made through the wire 16.

  Thereafter, the recess 3 is filled with a sealing resin 17, and the semiconductor light emitting element 15 and the bonding wire 16 are sealed with resin. At this time, the sealing resin 17 is made of a translucent resin such as an epoxy resin or a silicone resin, or a translucent resin in which one or more phosphors are dispersed.

  A multi-chip semiconductor light emitting device 36 is completed through the manufacturing steps (a) to (i).

  Finally, in the step (j), the multi-cavity semiconductor light emitting device 36 is cut by dicing with the cross section taken as the (110) plane along the bottom surface of the groove portion 37 of the Si substrate 30, and the individual semiconductor light emitting devices 21 are separated. The semiconductor light emitting device 21 (see FIG. 2) is completed.

  In addition, although the said manufacturing process is an example at the time of using a TMAH solution for anisotropic etching, when other etching solutions, such as a KOH (potassium hydroxide) solution, are used, (a)-(c ) Is not necessarily the same as the step.

  In addition, the step (i) of fixing the semiconductor light emitting element 15, wiring the bonding wires 16, and resin sealing with the sealing resin 17 is performed after the multi-piece Si substrate on which the etching process and the metal film are formed is separated into pieces. It may be done individually.

  That is, dicing is performed after the steps (a) to (h), and then the semiconductor light emitting element 15 is fixed, the bonding wires 16 are wired, and the resin sealing is performed with the sealing resin 17.

  Note that when the semiconductor light emitting device is solder mounted on the conductor light emitting device mounting substrate, the inclined surface of the semiconductor light emitting device that forms a solder fillet with the circuit pattern of the semiconductor light emitting device mounting substrate is a pair of Si substrates facing each other. It may be provided not only on the side surface side but also on two pairs of side surface surfaces facing each other. That is, you may provide not only in 2 surfaces of Si substrate but in 4 surfaces.

  Further, the inclined surface does not need to be provided on the entire surface of each side surface of the Si substrate, and may be provided at the center portion on each side surface side or the corner portion on each side surface side. Further, the back electrode pattern formed on the inclined surface is not necessarily formed on the entire inclined surface, and can be formed on a part thereof.

  As described above, the semiconductor light emitting device of the present invention can be manufactured by such a manufacturing process. Therefore, when the semiconductor light-emitting device is solder-mounted on the conductor light-emitting device mounting substrate, an inclined surface on which the back surface electrode pattern of the semiconductor light-emitting device forms a solder fillet with the circuit pattern of the semiconductor light-emitting device mounting substrate is manufactured. It can be formed without providing a special process in the process.

  Therefore, it is possible to manufacture a semiconductor light emitting device with high mounting reliability without causing a decrease in productivity due to an increase in man-hours.

1 is a schematic top view of an embodiment of an optical semiconductor device of the present invention. It is AA sectional drawing of FIG. It is a schematic bottom view of the embodiment concerning the optical semiconductor device of the present invention. It is mounting explanatory drawing of embodiment which concerns on the optical semiconductor device of this invention. It is process drawing which shows the manufacturing method of embodiment which concerns on the optical semiconductor device of this invention. It is process drawing which shows the manufacturing method of embodiment which concerns on the optical semiconductor device of this invention. It is explanatory drawing of the semiconductor light-emitting device of a prior art example. It is mounting explanatory drawing of the semiconductor light-emitting device of a prior art example.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Si substrate 2 Front surface 3 Concave part 4 Back surface 8 Insulating layer 15 Semiconductor light emitting element 16 Bonding wire 17 Sealing resin 20 Semiconductor light emitting device mounting substrate 21 Semiconductor light emitting device 23 Solder 24 Solder fillet 30 Si substrate 31 Oxide film 32 Resist mask 33 Resist Mask 34 Resist mask 35 Metal film 36 Multi-cavity semiconductor light emitting device 37 Groove

Claims (6)

  A Si substrate having a crystal plane (100), a recess formed on the surface side of the (100) plane, a plurality of through holes reaching the back surface of the (100) plane from the bottom surface of the (100) plane of the recess, and the back surface And at least a pair of inclined surfaces that face each other and intersect each of the side surfaces substantially perpendicular to the surface, and the semiconductor light emitting device is mounted in the recess and connected to each electrode of the semiconductor light emitting device In addition, the semiconductor light emitting device is characterized in that the electrode patterns separated and independent from each other are formed so as to extend to the inclined surface through the through hole and the back surface.   The semiconductor light emitting device according to claim 1, wherein an insulating film is provided at least between the Si substrate and each electrode pattern.   The sealing resin is filled in the recess, and the sealing resin is made of a translucent resin or a translucent resin in which one or more kinds of phosphors are dispersed. The semiconductor light-emitting device of any one of Claims. A silicon substrate having a crystal plane (100) is subjected to anisotropic etching depending on the plane orientation to form a plurality of recesses on the surface side of the (100) plane, and from the bottom surface of the (100) plane of the recess to the (100) plane Forming a plurality of through holes reaching the back surface and a groove portion having a substantially trapezoidal cross section gradually narrowing from the back surface side toward the front surface side on the back surface side;
Forming insulating films on both sides of the Si substrate;
Forming a plurality of electrode patterns separated and independent from each other on the insulating film, extending from the inner surface of the concave portion to the side surface of the groove portion through the through hole and the back surface;
Mounting a semiconductor light emitting element in the recess and filling a sealing resin in the recess;
A method of manufacturing the semiconductor light-emitting device, comprising: cutting a piece by dicing with a cross-section of the groove portion along the (100) plane as a (110) plane and dividing it into individual pieces.   5. The method of manufacturing a semiconductor light emitting device according to claim 4, wherein a width of a bottom surface of the groove is formed wider than a width of a blade used during the dicing.   6. The method for manufacturing a semiconductor light emitting device according to claim 4, wherein the solution used for the anisotropic etching is a TMAH solution or a KOH solution.

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