JP2010129590A - Substrate cleaning method and electrostatic charging suppression effect monitor - Google Patents

Substrate cleaning method and electrostatic charging suppression effect monitor Download PDF

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JP2010129590A
JP2010129590A JP2008299669A JP2008299669A JP2010129590A JP 2010129590 A JP2010129590 A JP 2010129590A JP 2008299669 A JP2008299669 A JP 2008299669A JP 2008299669 A JP2008299669 A JP 2008299669A JP 2010129590 A JP2010129590 A JP 2010129590A
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substrate
liquid
model piece
cleaning
electrostatic potential
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Hiroto Tokoshima
裕人 床嶋
Hiroshi Morita
博志 森田
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Kurita Water Industries Ltd
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Kurita Water Industries Ltd
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<P>PROBLEM TO BE SOLVED: To easily and accurately monitor electrostatic charging suppression effect by a cleaning liquid when a substrate is cleaned with the liquid having higher conductivity than pure water so as to prevent electrostatic charging of the substrate. <P>SOLUTION: A substrate cleaning method includes portioning out part of the cleaning liquid, bringing it into contact with a model piece of the same material with the substrate to be cleaned, and measuring the electrostatic potential of the model piece to monitor an electrostatic charging state of the substrate. An electrostatic charging suppression effect monitor includes: a liquid contacting means for bringing the cleaning liquid into contact with the model piece of the same material with the substrate to be cleaned; and an electrostatic potential measuring means for measuring the electrostatic potential of the model piece brought into contact with the cleaning liquid by the liquid contacting means. <P>COPYRIGHT: (C)2010,JPO&amp;INPIT

Description

本発明は、半導体用のシリコンウェハ、フラットパネルディスプレイ用のガラス基板、フッ素樹脂コート基板等、高度な清浄度を必要とする基板の洗浄方法及び基板洗浄用の液体の帯電抑制効果監視モニターに関する。   The present invention relates to a method for cleaning a substrate that requires a high degree of cleanness, such as a silicon wafer for semiconductors, a glass substrate for flat panel displays, and a fluororesin-coated substrate, and a monitor for monitoring the charge suppression effect of liquid for substrate cleaning.

従来、電子部品用基板の洗浄には、超純水などが用いられているが、超純水を洗浄に用いると、その比抵抗値の高さから、被洗浄基板やノズルとの摩擦によって被洗浄基板が帯電することがある。基板が帯電すると、この基板に微細な回路パターンがある場合、その回路が破壊されてしまうことがある。また、静電気の発生で基板に塵埃やパーティクルが付着し易くなる。   Conventionally, ultrapure water or the like has been used for cleaning electronic component substrates. However, when ultrapure water is used for cleaning, because of its high specific resistance, the substrate is subject to friction due to friction with the substrate to be cleaned and nozzles. The cleaning substrate may be charged. When the substrate is charged, if the substrate has a fine circuit pattern, the circuit may be destroyed. In addition, dust and particles easily adhere to the substrate due to the generation of static electricity.

これを防ぐために、従来、基板の洗浄に、超純水に微量の導電性付与物質、例えば、炭酸ガスを溶解させて導電性を高めた水、いわゆる炭酸水が用いられている(例えば、特許文献1)。この炭酸水の炭酸濃度は、導電性の付与を目的とするため、通常1〜50mg/Lと極低濃度である。   In order to prevent this, conventionally, a very small amount of conductivity imparting substance, for example, water in which carbon dioxide gas is dissolved to increase conductivity, so-called carbonated water, is used for substrate cleaning (for example, patented water). Reference 1). The carbonic acid concentration of the carbonated water is usually 1 to 50 mg / L, which is an extremely low concentration, for the purpose of imparting conductivity.

炭酸水のような超純水より導電性の高い液体(以下「洗浄用液体」と称す場合がある。)を用いて基板を洗浄した際に、この液体の基板に対する帯電抑制効果を確認し、その結果を洗浄条件等に反映することが重要である。例えば、洗浄に用いる炭酸水の炭酸濃度は高い方が導電性が高く、従って、帯電抑制効果も高いが、用いる炭酸水の炭酸濃度を高くすることは、炭酸消費量の増大につながり、洗浄コストの面で好ましくない。従って、十分な帯電抑制効果を得た上で、低濃度の炭酸水を用いて洗浄を行うことが望まれ、このためには、炭酸水による帯電抑制効果を確認して炭酸水の炭酸濃度を制御することが望まれる。   When cleaning a substrate using a liquid having higher conductivity than ultrapure water such as carbonated water (hereinafter sometimes referred to as “cleaning liquid”), the antistatic effect of this liquid on the substrate was confirmed, It is important to reflect the results in the cleaning conditions. For example, the higher the carbonate concentration of carbonated water used for cleaning, the higher the conductivity, and thus the higher the charge-suppressing effect. However, increasing the carbonate concentration of carbonated water used leads to an increase in the amount of carbonate consumption and the cleaning cost. This is not preferable. Therefore, it is desirable to perform washing using a low concentration carbonated water after obtaining a sufficient charge suppression effect. To this end, the carbonate concentration of carbonated water is increased by confirming the charge suppression effect of carbonated water. It is desirable to control.

従来、炭酸水等の洗浄用液体による帯電抑制効果を確認する方法としては、次のような方法が採用されている。
(1) 洗浄に用いた液体の導電率又は比抵抗値(導電率の逆数)を測定して、その導電性から帯電抑制効果を推定する。
(2) 液体により洗浄されている基板、即ち洗浄中の基板の静電電位を直接測定する。
特開平11−26412号公報
Conventionally, the following method has been adopted as a method for confirming the effect of suppressing charging by a cleaning liquid such as carbonated water.
(1) Measure the conductivity or specific resistance (reciprocal of conductivity) of the liquid used for cleaning, and estimate the charge-suppressing effect from its conductivity.
(2) Directly measure the electrostatic potential of the substrate being cleaned by the liquid, that is, the substrate being cleaned.
JP 11-26412 A

洗浄用液体の導電率又は比抵抗値の測定値に基く方法は、洗浄用液体の導電性から帯電抑制効果を間接的に推定するものであり、必ずしも実際の帯電抑制効果を反映するものではない。この場合、例えば、炭酸水を用いる洗浄においては、炭酸水の比抵抗値を0.2MΩ・cm程度に制御するのが一般的であるが、比抵抗値0.2MΩ・cmの炭酸水の炭酸濃度は約15mg/Lであり、これよりも炭酸濃度の低い炭酸水では帯電抑制効果はないと判断され、洗浄用炭酸水の炭酸濃度を更に低減することはできなかった。   The method based on the measured conductivity or specific resistance value of the cleaning liquid indirectly estimates the charge suppression effect from the conductivity of the cleaning liquid, and does not necessarily reflect the actual charge suppression effect. . In this case, for example, in cleaning using carbonated water, it is common to control the specific resistance value of carbonated water to about 0.2 MΩ · cm. The concentration was about 15 mg / L, and it was determined that carbonated water having a lower carbonic acid concentration had no charge-suppressing effect, and the carbonic acid concentration of cleaning carbonated water could not be further reduced.

洗浄中の基板の静電電位を直接測定する方法は、確実な方法ではあるが、基板の出し入れなど、頻繁に操作を行っている系内で被洗浄基板面の静電電位を測定することは実用上困難である。   Although the method of directly measuring the electrostatic potential of the substrate being cleaned is a reliable method, it is not possible to measure the electrostatic potential of the surface of the substrate to be cleaned in a system that is frequently operated, such as loading and unloading the substrate. It is difficult in practice.

このようなことから、洗浄基板に対する帯電抑制効果を簡便な方法で的確に確認することができる実用性の高い技術が望まれている。   For this reason, a highly practical technique that can accurately confirm the effect of suppressing the charge on the cleaning substrate by a simple method is desired.

本発明は上記従来の実情に鑑みてなされたものであって、洗浄用液体による洗浄基板の帯電抑制効果を簡便かつ的確に確認することができる基板洗浄方法及び帯電抑制効果監視モニターを提供することを目的とする。   The present invention has been made in view of the above-described conventional situation, and provides a substrate cleaning method and a charge suppression effect monitoring monitor capable of easily and accurately confirming the charge suppression effect of a cleaning substrate by a cleaning liquid. With the goal.

本発明者らは上記課題を解決すべく鋭意検討した結果、被洗浄基板と同材質のモデル片に洗浄用液体を接触させ、該モデル片と洗浄用液体との接触で発生する静電電位を測定することにより、該液体の帯電抑制効果を簡便かつ的確に確認することができることを見出し、この知見に基づいて本発明を完成するに至った。   As a result of intensive studies to solve the above problems, the present inventors brought a cleaning liquid into contact with a model piece made of the same material as that of the substrate to be cleaned, and an electrostatic potential generated by the contact between the model piece and the cleaning liquid was increased. By measuring, it was found that the charge suppression effect of the liquid can be confirmed easily and accurately, and the present invention has been completed based on this finding.

本発明(請求項1)の基板洗浄方法は、超純水よりも導電性の高い液体で基板を洗浄する基板洗浄方法において、該液体の一部を分取し、前記基板と同材質のモデル片と接触させ、該モデル片の静電電位を測定することにより、前記基板の帯電状況を監視することを特徴とするものである。   The substrate cleaning method of the present invention (Claim 1) is a substrate cleaning method in which a substrate is cleaned with a liquid having higher conductivity than ultrapure water. The charging state of the substrate is monitored by contacting with a piece and measuring the electrostatic potential of the model piece.

請求項2の基板洗浄方法は、請求項1において、前記液体が、炭酸水であることを特徴とするものである。   According to a second aspect of the present invention, in the substrate cleaning method of the first aspect, the liquid is carbonated water.

請求項3の帯電抑制効果監視モニターは、基板洗浄用の、超純水よりも導電性の高い液体を該基板と同材質のモデル片と接触させる液体接触手段と、該液体接触手段で前記液体と接触しているモデル片の静電電位を測定する静電電位測定手段とを備えてなるものである。   According to a third aspect of the present invention, there is provided a monitoring monitor for electrification suppression effect, comprising: a liquid contact means for contacting a liquid having higher conductivity than ultrapure water with a model piece made of the same material as the substrate; And an electrostatic potential measuring means for measuring the electrostatic potential of the model piece in contact with the model piece.

請求項4の帯電抑制効果監視モニターは、請求項3において、前記モデル片は、板面を傾斜させて設置されており、前記液体接触手段は、該モデル片の板面の傾斜方向の途中部分に向って前記液体を注ぎ掛けるように設けられており、前記静電電位測定手段は、該基板の該途中部分よりも傾斜方向上位側に対面設置された静電電位計であることを特徴とするものである。   According to a fourth aspect of the present invention, there is provided the monitoring monitor for charging suppression effect according to the third aspect, wherein the model piece is installed with an inclined plate surface, and the liquid contact means is an intermediate portion in the inclination direction of the plate surface of the model piece. The electrostatic potential measuring means is an electrostatic electrometer installed facing the upper side in the inclined direction with respect to the intermediate portion of the substrate. To do.

本発明によれば、洗浄基板と同材質のモデル片に洗浄用液体を接触させ、該モデル片と洗浄用液体との接触で発生する静電電位を測定することにより、洗浄用液体による実質的な帯電抑制効果を簡便かつ的確に確認することができる。   According to the present invention, the cleaning liquid is brought into contact with the model piece made of the same material as the cleaning substrate, and the electrostatic potential generated by the contact between the model piece and the cleaning liquid is measured. Can be confirmed easily and accurately.

このため、洗浄用液体による帯電抑制効果を監視すると共に、その結果を洗浄条件に反映することにより、効果的な基板洗浄を行うことができる。例えば、帯電抑制効果を十分に得ることができる範囲で、用いる洗浄用液体の導電性付与物質濃度を低減することができ、洗浄コストの低減を図ることができる。   For this reason, it is possible to perform effective substrate cleaning by monitoring the charging suppression effect by the cleaning liquid and reflecting the result in the cleaning conditions. For example, the concentration of the conductivity-imparting substance in the cleaning liquid to be used can be reduced within a range in which the charge suppressing effect can be sufficiently obtained, and the cleaning cost can be reduced.

本発明において、洗浄用液体としては炭酸水が効果的である(請求項2)。また、本発明の帯電抑制効果監視モニターは、具体的には、モデル片が、板面を傾斜させて設置され、このモデル片の板面の傾斜方向の途中部分に向って洗浄用液体を注ぎ掛けるように液体接触手段が設けられ、このモデル片の途中部分よりも傾斜方向上位側に静電電位測定手段が対面設置されているものが好ましく、これにより、簡易な装置構成で的確な静電電位測定を行うことができる(請求項4)。   In the present invention, carbonated water is effective as the cleaning liquid (claim 2). Further, in the monitor for monitoring the effect of suppressing electrification of the present invention, specifically, the model piece is installed with the plate surface inclined, and the cleaning liquid is poured toward the middle of the inclination direction of the plate surface of the model piece. It is preferable that the liquid contact means is provided so as to be applied, and the electrostatic potential measuring means is provided facing the upper side in the inclination direction from the middle part of the model piece. The position measurement can be performed (claim 4).

以下に図面を参照して本発明の基板洗浄方法及び帯電抑制効果監視モニターの実施の形態を詳細に説明する。   Embodiments of a substrate cleaning method and a charge suppression effect monitoring monitor according to the present invention will be described below in detail with reference to the drawings.

図1は本発明の帯電抑制効果監視モニターの実施の形態を示す模式図であり、図中、1は筐体、2はモデル片、3は静電電位計、4は洗浄用液体給水配管、5は排水配管を示す。   FIG. 1 is a schematic diagram showing an embodiment of a monitoring monitor for electrification suppression effect of the present invention. In the figure, 1 is a housing, 2 is a model piece, 3 is an electrostatic potential meter, 4 is a liquid supply pipe for cleaning, Reference numeral 5 denotes a drain pipe.

図1においては、板状のモデル片2がその板面2Aを水平面に対して傾斜させて筐体1内に設置されており、給水配管4は、このモデル片2の傾斜板面2Aの途中部分に向って洗浄用液体を注ぎ掛けることができるように、筐体1内に挿入されている(以下、モデル片2の板面2Aのうち、洗浄用液体が注ぎ掛けられる位置を「注液点」と称す場合がある。)。   In FIG. 1, a plate-shaped model piece 2 is installed in the housing 1 with its plate surface 2 </ b> A inclined with respect to a horizontal plane, and the water supply pipe 4 is in the middle of the inclined plate surface 2 </ b> A of the model piece 2. The cleaning liquid is inserted into the housing 1 so that the cleaning liquid can be poured toward the portion (hereinafter, the position on the plate surface 2A of the model piece 2 where the cleaning liquid is poured) Sometimes referred to as “point”.)

また、静電電位計3は、この注液点よりも傾斜方向上位側に対面設置されている。   In addition, the electrostatic electrometer 3 is installed facing the upper side in the tilt direction from the liquid injection point.

この帯電抑制効果監視モニターであれば、基板の洗浄操作中において、或いは基板の洗浄に先立ち、洗浄用液体の一部を分取して、配管4よりモデル片2に注ぎ掛け、洗浄用液体がモデル片2に接触して擦れることでモデル片2に発生する静電電位を、この注液点近傍に設けられた静電電位計3で測定することにより、用いる洗浄用液体の帯電抑制効果を確認することができる。   With this charge suppression effect monitoring monitor, a part of the cleaning liquid is collected during the substrate cleaning operation or prior to the substrate cleaning, and poured into the model piece 2 from the pipe 4 so that the cleaning liquid is By measuring the electrostatic potential generated in the model piece 2 by contacting and rubbing the model piece 2 with the electrostatic potentiometer 3 provided in the vicinity of the injection point, the charging suppression effect of the cleaning liquid to be used can be reduced. Can be confirmed.

即ち、静電電位計3による測定値が−10〜+10kVでほぼ0kVであれば、当該洗浄用液体は十分な帯電抑制効果を有し、基板洗浄に好適であることを確認することができる。また、この静電電位計3の測定値が例えば−0.5kV以下と0kVから大きくはずれている場合、当該洗浄用液体は帯電抑制効果が十分でなく、基板洗浄には不適当であると評価することができる。   That is, if the measured value by the electrostatic potentiometer 3 is −10 to +10 kV and almost 0 kV, it can be confirmed that the cleaning liquid has a sufficient charge suppressing effect and is suitable for substrate cleaning. Further, when the measured value of the electrostatic electrometer 3 deviates significantly from, for example, −0.5 kV or less and 0 kV, it is evaluated that the cleaning liquid does not have sufficient charge suppression effect and is inappropriate for substrate cleaning. can do.

モデル片2の板面2Aに注下された洗浄用液体は、モデル片2の傾斜板面2Aを流下して配管5より排出される。   The cleaning liquid poured onto the plate surface 2 </ b> A of the model piece 2 flows down the inclined plate surface 2 </ b> A of the model piece 2 and is discharged from the pipe 5.

本発明における被洗浄基板は、半導体用のシリコンウェハ、フラットパネルディスプレイ用のガラス基板、フッ素樹脂コート基板等であり、その材質は、シリコン、ガラス、PFA(パーフルオロアルコキシフッ素樹脂)、PTFE(ポリテトラフルオロエチレン)等のフッ素樹脂、PFA、トップコート等で被覆された基板等であり、特に制限はない。   The substrate to be cleaned in the present invention is a silicon wafer for semiconductor, a glass substrate for flat panel display, a fluororesin coated substrate or the like, and the material thereof is silicon, glass, PFA (perfluoroalkoxy fluororesin), PTFE (polyethylene). There are no particular restrictions on the substrate coated with a fluororesin such as (tetrafluoroethylene), PFA, topcoat or the like.

モデル片2は、このような被洗浄基板と同材質のもの、より詳細には、被洗浄基板の被洗浄面と同材質のものであり、従って、被洗浄基板がフッ素樹脂コート基板等の表面被覆層を有するものである場合、必ずしも、モデル片は基板と同様にフッ素樹脂コートを施したものとする必要はなく、被覆層を形成するフッ素樹脂のみからなる板状片であっても良い。   The model piece 2 is made of the same material as the substrate to be cleaned, and more specifically, is made of the same material as the surface to be cleaned of the substrate to be cleaned. Therefore, the substrate to be cleaned is a surface such as a fluororesin coated substrate. In the case of having a coating layer, the model piece does not necessarily have to be coated with a fluororesin in the same manner as the substrate, and may be a plate-shaped piece made of only a fluororesin that forms the coating layer.

モデル片2の寸法には特に制限はないが、本発明のモニターを過度に大きなものとすることはなく、取り扱い性と強度を確保し、また、測定誤差を防止する上で、板面の寸法が30〜100mm×30〜100mm程度で厚さが3〜5mm程度の板状であることが好ましい。   The size of the model piece 2 is not particularly limited, but the monitor of the present invention is not excessively large, and the dimensions of the plate surface are required to ensure handling and strength and to prevent measurement errors. Is preferably a plate having a thickness of about 30 to 100 mm × 30 to 100 mm and a thickness of about 3 to 5 mm.

モデル片2は、図1に示す如く、水平面に対して板面2Aを傾斜させて設けられるが、この傾斜角θは20〜60°、特に30〜50°程度が好ましい。傾斜角θが大き過ぎても小さ過ぎても、注下された洗浄用液体とモデル片の板面との摩擦による静電電位の発生量が十分でないことにより、また、実際の基板洗浄状況を十分に模擬することができないことにより、正確な静電電位測定を行えない場合がある。   As shown in FIG. 1, the model piece 2 is provided with the plate surface 2 </ b> A inclined with respect to a horizontal plane. The inclination angle θ is preferably 20 to 60 °, particularly preferably about 30 to 50 °. Whether the tilt angle θ is too large or too small, the amount of electrostatic potential generated by the friction between the poured cleaning liquid and the plate surface of the model piece is not enough, There are cases where accurate electrostatic potential measurement cannot be performed due to insufficient simulation.

また、洗浄用液体の注液点は、モデル片2のこのような傾斜板面2Aのほぼ中央付近とすることが好ましい。   Moreover, it is preferable that the pouring point of the cleaning liquid is approximately in the vicinity of the center of the inclined plate surface 2A of the model piece 2.

洗浄用液体は、超純水よりも導電性の高い液体であり、通常、超純水に導電性を付与するための物質を溶解させて調製される。この導電性付与物質は、洗浄後の基板に残留しないものが好ましく、炭酸ガスが最適である。即ち、洗浄用液体としては炭酸水が好ましい。   The cleaning liquid is a liquid having higher conductivity than ultrapure water, and is usually prepared by dissolving a substance for imparting conductivity to ultrapure water. This conductivity imparting substance is preferably one that does not remain on the substrate after cleaning, and carbon dioxide gas is optimal. That is, carbonated water is preferable as the cleaning liquid.

洗浄に用いる炭酸水の炭酸濃度は、通常1〜50mg/L程度、比抵抗値として0.1〜0.3MΩ・cm程度とされるが、本発明に従って、炭酸水の帯電抑制効果を確認することにより、必要とされる帯電抑制効果を得た上で、炭酸水の炭酸濃度を十分に低い値、例えば1〜5mg/Lに制御することができ、炭酸ガス使用量を低減して洗浄コストの低減を図ることができる。   The carbonate concentration of carbonated water used for washing is usually about 1 to 50 mg / L, and the specific resistance is about 0.1 to 0.3 MΩ · cm. According to the present invention, the charge suppression effect of carbonated water is confirmed. Thus, after obtaining the required charge suppression effect, the carbonate concentration of carbonated water can be controlled to a sufficiently low value, for example, 1 to 5 mg / L, and the cleaning cost can be reduced by reducing the amount of carbon dioxide used. Can be reduced.

洗浄用液体のモデル片板面への注液速度には特に制限はないが、この注液速度についても大き過ぎても小さ過ぎても洗浄用液体とモデル片の板面との摩擦による静電電位の発生量が十分でないことにより、また、実際の基板洗浄状況を十分に模擬することができないことにより、正確な静電電位測定を行えない場合があることから、0.1〜1L/min程度とすることが好ましい。   There is no particular limitation on the rate at which the cleaning liquid is injected onto the model plate surface. However, even if the injection rate is too high or too low, electrostatic electricity due to friction between the cleaning liquid and the plate surface of the model piece can be obtained. Since the amount of generated potential is not sufficient, and the actual substrate cleaning situation cannot be sufficiently simulated, accurate electrostatic potential measurement may not be performed, so 0.1 to 1 L / min. It is preferable to set the degree.

静電電位計3としては、市販の静電電位計を用いることができ、その使用条件は、使用する静電電位計の仕様に従えばよい。   As the electrostatic electrometer 3, a commercially available electrostatic electrometer can be used, and the use conditions may be in accordance with the specifications of the electrostatic electrometer used.

なお、筐体1の材質としては、基板洗浄で基板と接しているものが好ましく、通常、PPS(ポリフェニレンサルファイド)、PEEK(ポリエーテルエーテルケトン)、PFA、PE(ポリエチレン)等が用いられる。   The material of the housing 1 is preferably a substrate that is in contact with the substrate by substrate cleaning, and usually PPS (polyphenylene sulfide), PEEK (polyetheretherketone), PFA, PE (polyethylene) or the like is used.

以下に実施例を挙げて本発明をより具体的に説明する。   Hereinafter, the present invention will be described more specifically with reference to examples.

<実施例1>
図1に示す装置を用い、洗浄用液体を超純水から炭酸水に切り換え、モデル片2の静電電位を測定した。結果を図2に示す。
<Example 1>
Using the apparatus shown in FIG. 1, the cleaning liquid was switched from ultrapure water to carbonated water, and the electrostatic potential of the model piece 2 was measured. The results are shown in FIG.

なお、本実施例に用いた材料、測定機器及び条件等は次の通りである。
筐体の材質:PE
モデル片:50mm×50mm×厚さ3mmのPFA板
モデル片の傾斜角度θ:45°
静電電位計:シシド静電(株)製「STATIRON−D23」
洗浄用液体の供給量:0.5L/min
炭酸水の炭酸濃度:1〜5mg/L(比抵抗値:0.5〜1.1MΩ・cm)
超純水の比抵抗値:18.2MΩ・cm
注液点:モデル片のほぼ中央付近
The materials, measuring equipment, conditions, etc. used in this example are as follows.
Housing material: PE
Model piece: PFA plate of 50 mm x 50 mm x 3 mm thickness Tilt angle of model piece: 45 °
Electrostatic potential meter: “STATIRON-D23” manufactured by Sicid Electrostatic Co., Ltd.
Supply amount of cleaning liquid: 0.5 L / min
Carbonate concentration in carbonated water: 1 to 5 mg / L (specific resistance value: 0.5 to 1.1 MΩ · cm)
Specific resistance value of ultrapure water: 18.2 MΩ · cm
Injection point: Near the center of the model piece

図2より次のことが明らかである。   The following is clear from FIG.

超純水は比抵抗値が高いため、モデル片と接触すると帯電が起こり、従って、超純水給水時にはモデル片の静電電位の測定値は−1.0kV以下でモデル片が帯電している。これに対して、炭酸水は導電性を有し、モデル片に帯電を起こし難いため、超純水から炭酸水に給水を切り換えるとモデル片の静電電位の測定値はほぼ0kVで安定し、帯電が起こっていないことを確認することができた。   Since ultrapure water has a high specific resistance value, charging occurs when it comes into contact with the model piece. Therefore, when the ultrapure water is supplied, the measured value of the electrostatic potential of the model piece is −1.0 kV or less and the model piece is charged. . On the other hand, carbonated water has electrical conductivity and does not easily charge the model piece. Therefore, when the water supply is switched from ultrapure water to carbonated water, the measured value of the electrostatic potential of the model piece is stabilized at approximately 0 kV, It was confirmed that no charging occurred.

前述の如く、従来、炭酸水による基板洗浄において、炭酸水の比抵抗値から導電性を確認して洗浄に用いる場合、比抵抗値0.2MΩ・cm程度の炭酸水を必要としているが、この場合の炭酸水の炭酸濃度は約15mg/Lである。
これに対して、上記実施例の結果から、炭酸濃度1〜5mg/Lの炭酸水でも十分な帯電抑制効果を得ることができることを確認できたことから、洗浄用炭酸水の炭酸消費量を従来の約1/3以下に低減することができることが分かる。
As described above, in the conventional substrate cleaning with carbonated water, when the conductivity is confirmed from the specific resistance value of carbonated water and used for cleaning, carbonated water having a specific resistance value of about 0.2 MΩ · cm is required. In this case, the carbonate concentration of carbonated water is about 15 mg / L.
On the other hand, from the results of the above examples, it was confirmed that a sufficient charge suppression effect could be obtained even with carbonated water having a carbonate concentration of 1 to 5 mg / L. It can be seen that it can be reduced to about 1/3 or less.

本発明の帯電抑制効果監視モニターの実施の形態を示す模式図である。It is a schematic diagram which shows embodiment of the charging suppression effect monitoring monitor of this invention. 実施例1の結果を示すグラフである。3 is a graph showing the results of Example 1.

符号の説明Explanation of symbols

1 筐体
2 モデル片
3 静電電位計
4 洗浄用液体給水配管
5 排水配管
DESCRIPTION OF SYMBOLS 1 Case 2 Model piece 3 Electrostatic potential meter 4 Liquid supply pipe for washing 5 Drain pipe

Claims (4)

超純水よりも導電性の高い液体で基板を洗浄する基板洗浄方法において、
該液体の一部を分取し、前記基板と同材質のモデル片と接触させ、該モデル片の静電電位を測定することにより、前記基板の帯電状況を監視することを特徴とする基板洗浄方法。
In a substrate cleaning method for cleaning a substrate with a liquid having higher conductivity than ultrapure water,
Substrate cleaning characterized in that a part of the liquid is separated, brought into contact with a model piece made of the same material as the substrate, and an electrostatic potential of the model piece is measured to monitor the charging state of the substrate. Method.
請求項1において、前記液体が、炭酸水であることを特徴とする基板洗浄方法。   The substrate cleaning method according to claim 1, wherein the liquid is carbonated water. 基板洗浄用の、超純水よりも導電性の高い液体を該基板と同材質のモデル片と接触させる液体接触手段と、
該液体接触手段で前記液体と接触しているモデル片の静電電位を測定する静電電位測定手段と
を備えてなる帯電抑制効果監視モニター。
A liquid contact means for cleaning a substrate and contacting a liquid having higher conductivity than ultrapure water with a model piece of the same material as the substrate;
An electrification suppression effect monitoring monitor comprising: an electrostatic potential measurement unit that measures an electrostatic potential of a model piece that is in contact with the liquid by the liquid contact unit.
請求項3において、前記モデル片は、板面を傾斜させて設置されており、
前記液体接触手段は、該モデル片の板面の傾斜方向の途中部分に向って前記液体を注ぎ掛けるように設けられており、
前記静電電位測定手段は、該モデル片の該途中部分よりも傾斜方向上位側に対面設置された静電電位計であることを特徴とする帯電抑制効果監視モニター。
In claim 3, the model piece is installed with the plate surface inclined.
The liquid contact means is provided so as to pour the liquid toward an intermediate portion in the inclination direction of the plate surface of the model piece,
The electrostatic charge measuring monitor according to claim 1, wherein the electrostatic potential measuring means is an electrostatic potential meter that is installed facing the upper side in the tilt direction with respect to the middle portion of the model piece.
JP2008299669A 2008-11-25 2008-11-25 Substrate cleaning method and electrostatic charging suppression effect monitor Pending JP2010129590A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020195081A1 (en) * 2019-03-25 2020-10-01 株式会社Screenホールディングス Substrate treatment method and substrate treatment device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06275591A (en) * 1993-03-19 1994-09-30 Matsushita Electron Corp Washing of semiconductor wafer
JP2008004880A (en) * 2006-06-26 2008-01-10 Mitsubishi Electric Corp Manufacturing method and manufacturing apparatus of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06275591A (en) * 1993-03-19 1994-09-30 Matsushita Electron Corp Washing of semiconductor wafer
JP2008004880A (en) * 2006-06-26 2008-01-10 Mitsubishi Electric Corp Manufacturing method and manufacturing apparatus of semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020195081A1 (en) * 2019-03-25 2020-10-01 株式会社Screenホールディングス Substrate treatment method and substrate treatment device
JP2020161522A (en) * 2019-03-25 2020-10-01 株式会社Screenホールディングス Substrate processing method and substrate processing apparatus
TWI737180B (en) * 2019-03-25 2021-08-21 日商斯庫林集團股份有限公司 Substrate processing method and substrate processing apparatus
JP7194623B2 (en) 2019-03-25 2022-12-22 株式会社Screenホールディングス Substrate processing method and substrate processing apparatus

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