JP2010118628A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2010118628A5 JP2010118628A5 JP2008292798A JP2008292798A JP2010118628A5 JP 2010118628 A5 JP2010118628 A5 JP 2010118628A5 JP 2008292798 A JP2008292798 A JP 2008292798A JP 2008292798 A JP2008292798 A JP 2008292798A JP 2010118628 A5 JP2010118628 A5 JP 2010118628A5
- Authority
- JP
- Japan
- Prior art keywords
- gas
- plasma processing
- gas nozzle
- processing apparatus
- nozzle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 210000002381 Plasma Anatomy 0.000 claims description 2
- 230000000875 corresponding Effects 0.000 claims description 2
Description
上記のような目的を達成するため、請求項1の発明は、内部を真空とすることが可能な処理室内に、被処理物に対向して配置され、プラズマ処理用のガスの流路を構成する穴が形成された複数のガスノズルを有するプラズマ処理装置において、前記複数のガスノズルは、互いの間に隙間を保持可能な状態で前記処理室の上下方向に重なり合う位置に、複数配置され、前記複数のガスノズルは、穴を通過するガスの圧力損失が変化するように、相対的に変位可能に設けられていることを特徴とする。
In order to achieve the above object, the invention of claim 1 is arranged in a processing chamber in which the inside can be evacuated so as to face an object to be processed, and constitutes a gas flow path for plasma processing. in the plasma processing apparatus having a plurality of gas nozzles holes are formed for the plurality of gas nozzles are in a position overlapping in the vertical direction of the processing chamber capable of holding a state a gap therebetween, a plurality of arranged, said plurality moth Sunozuru, as the pressure loss of the gas passing through the holes is changed, characterized in that is provided so as to be relatively displaceable.
請求項2の発明は、請求項1のプラズマ処理装置において、第1のガスノズルと、これに対向して回動可能に設けられた第2のガスノズルとを有し、前記第1のガスノズルにおける穴は、前記回動中心と同心の円上に複数配設され、前記第2のガスノズルにおける穴は、前記第1ガスノズルに配設された複数の穴に対応する円上に複数配設され、前記第1のガスノズルにおける穴と前記第2のガスノズルにおける穴とが、周方向にずれた部分を有することを特徴とする。
According to a second aspect of the invention, in the plasma processing apparatus according to claim 1, comprising: a first gas nozzle, a second nozzle which is provided rotatably so as to face thereto, the holes in the first gas nozzle , said a plurality disposed on the rotation center concentric circle, the hole in the second gas nozzles are more disposed on a circle corresponding to a plurality of holes disposed in the first gas nozzle The hole in the first gas nozzle and the hole in the second gas nozzle have a portion shifted in the circumferential direction.
請求項3の発明は、請求項1のプラズマ処理装置において、少なくとも一つのガスノズルと、これに対向するガスノズルとの間隔が、可変に設けられていることを特徴とする。
以上のような請求項3の発明では、両ガスノズルの穴の位置が接近している場合、圧力損失が大きくガスが流れ難くなり、穴の位置が離れている場合、圧力損失が小さくガスが流れ易くなるので、ガスノズルの間隔を変えることにより、処理速度を制御できる。
The invention of claim 3 provides the plasma processing apparatus according to claim 1, at least one gas nozzle, the distance between the gas nozzle opposed thereto, characterized in that provided variably.
In the invention of claim 3 as described above, when the positions of the holes of both gas nozzles are close to each other, the pressure loss is large and the gas hardly flows. When the positions of the holes are separated, the pressure loss is small and the gas flows. Since it becomes easy, processing speed is controllable by changing the space | interval of a gas nozzle.
請求項5の発明は、請求項4のプラズマ処理装置において、前記被処理物の被処理面から前記排気部側において、前記駆動機構と前記ガスノズルを接続する支持部を有し、前記支持部は、処理室の内壁の少なくとも一部を覆う位置に設けられていることを特徴とする。
以上のような請求項5の発明では、処理室の内壁を覆う支持部によって、処理時のガスから内壁が保護される。
The invention of claim 5 provides the plasma processing apparatus according to claim 4, wherein in the exhaust side from the processed surface of the object has a support portion for connecting said gas nozzle and said drive mechanism, said support portion Further, it is provided at a position covering at least a part of the inner wall of the processing chamber.
In the invention of claim 5 as described above, the inner wall is protected from the gas during processing by the support portion covering the inner wall of the processing chamber.
Claims (5)
前記複数のガスノズルは、互いの間に隙間を保持可能な状態で前記処理室の上下方向に重なり合う位置に配置され、
前記複数のガスノズルは、穴を通過するガスの圧力損失が変化するように、相対的に変位可能に設けられていることを特徴とするプラズマ処理装置。 In a plasma processing apparatus having a plurality of gas nozzles arranged in a processing chamber that can be evacuated inside and opposed to an object to be processed, and formed with holes that constitute a flow path for a plasma processing gas,
Wherein the plurality of gas nozzles are placed in a position overlapping in the vertical direction of the processing chamber capable of holding a state a gap therebetween,
Wherein the plurality of gas Sunozuru, as the pressure loss of the gas passing through the holes is changed, the plasma processing apparatus characterized by being arranged to be relatively displaceable.
前記第1のガスノズルにおける穴は、前記回動中心と同心の円上に複数配設され、
前記第2のガスノズルにおける穴は、前記第1のガスノズルに配設された複数の穴に対応する円上に複数配設され、
前記第1のガスノズルにおける穴と前記第2のガスノズルにおける穴とが、周方向にずれた部分を有することを特徴とする請求項1記載のプラズマ処理装置。 A first gas nozzle and a second gas nozzle rotatably provided opposite to the first gas nozzle;
The holes in the first gas nozzles are more disposed on the rotation center concentric circle,
The hole in the second gas nozzles are more disposed on a circle corresponding to a plurality of holes disposed in said first nozzle,
The plasma processing apparatus according to claim 1, wherein the hole in the first gas nozzle and the hole in the second gas nozzle have portions that are shifted in the circumferential direction.
前記ガスノズルの少なくとも一つを駆動する駆動機構が、被処理物の被処理面から前記排気部側にあることを特徴とする請求項1〜3のいずれか1項に記載のプラズマ処理装置。 The processing chamber is provided with a gas exhaust part,
The plasma processing apparatus according to any one of claims 1 to 3, wherein a driving mechanism that drives at least one of the gas nozzles is located on the exhaust portion side from a surface to be processed of the object to be processed.
前記支持部は、処理室の内壁の少なくとも一部を覆う位置に設けられていることを特徴とする請求項4記載のプラズマ処理装置。 Wherein in the exhaust side from the processed surface of the object has a support portion for connecting said gas nozzle and said drive mechanism,
The plasma processing apparatus according to claim 4, wherein the support portion is provided at a position covering at least a part of the inner wall of the processing chamber.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008292798A JP5150461B2 (en) | 2008-11-14 | 2008-11-14 | Plasma processing equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008292798A JP5150461B2 (en) | 2008-11-14 | 2008-11-14 | Plasma processing equipment |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2010118628A JP2010118628A (en) | 2010-05-27 |
JP2010118628A5 true JP2010118628A5 (en) | 2012-01-05 |
JP5150461B2 JP5150461B2 (en) | 2013-02-20 |
Family
ID=42306080
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008292798A Active JP5150461B2 (en) | 2008-11-14 | 2008-11-14 | Plasma processing equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5150461B2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110484891A (en) * | 2019-09-29 | 2019-11-22 | 江苏微导纳米装备科技有限公司 | A kind of technique for vacuum coating chamber and the vacuum suspension coating machine with it |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0738384B2 (en) * | 1986-03-18 | 1995-04-26 | 富士通株式会社 | Plasma assing device |
JPH0653147A (en) * | 1992-07-31 | 1994-02-25 | Mitsubishi Electric Corp | Semiconductor manufacturing device |
JP2638443B2 (en) * | 1993-08-31 | 1997-08-06 | 日本電気株式会社 | Dry etching method and dry etching apparatus |
US5980638A (en) * | 1997-01-30 | 1999-11-09 | Fusion Systems Corporation | Double window exhaust arrangement for wafer plasma processor |
JP2001053065A (en) * | 1999-08-13 | 2001-02-23 | Nec Kyushu Ltd | Plasma processing apparatus |
KR100400044B1 (en) * | 2001-07-16 | 2003-09-29 | 삼성전자주식회사 | Shower head of wafer treatment apparatus having gap controller |
JP4707139B2 (en) * | 2005-06-28 | 2011-06-22 | 芝浦メカトロニクス株式会社 | Decompression treatment apparatus and decompression treatment method |
JP4721336B2 (en) * | 2005-07-26 | 2011-07-13 | 芝浦メカトロニクス株式会社 | Plasma processing apparatus and cleaning method thereof |
-
2008
- 2008-11-14 JP JP2008292798A patent/JP5150461B2/en active Active
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2012115757A5 (en) | ||
JP2014070249A5 (en) | ||
JP2010153680A5 (en) | ||
JP2009523915A5 (en) | ||
JP2007076175A5 (en) | ||
JP2011222960A5 (en) | ||
JP6615336B2 (en) | Substrate processing apparatus and tube assembly method | |
JP2008535252A5 (en) | ||
JP2016042561A5 (en) | ||
JP2011508435A5 (en) | ||
JP2010073823A5 (en) | ||
JP6151829B2 (en) | Substrate processing equipment | |
JP2009239082A5 (en) | ||
JP2013049924A5 (en) | ||
JP2013513239A5 (en) | ||
JP2011052955A5 (en) | ||
JP2012531697A5 (en) | ||
JP2009255520A5 (en) | ||
JP2012522190A5 (en) | ||
JP2010056472A5 (en) | ||
JP2012056242A5 (en) | ||
JP2017515301A5 (en) | ||
JP2010118628A5 (en) | ||
JP2016517469A5 (en) | ||
JP6499401B2 (en) | Processing equipment for processing workpiece surfaces |