JP2010115772A - 新規の犠牲層材料を利用した基板の表面でのナノワイヤのパターニング方法 - Google Patents
新規の犠牲層材料を利用した基板の表面でのナノワイヤのパターニング方法 Download PDFInfo
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Abstract
【解決手段】本発明による基板の表面にナノワイヤをパターニングする方法は、(a)上記表面に、フッ化バリウム犠牲層が所望のパターンで形成された上記基板を提供するステップと、(b)上記フッ化バリウム犠牲層を含む上記基板の表面全体にわたって、ナノワイヤを成長させるステップと、(c)溶媒によって上記フッ化バリウム犠牲層を除去することにより、上記フッ化バリウム犠牲層の表面にある上記ナノワイヤごと除去して、上記基板の上記表面に直接接触した状態の上記ナノワイヤを残すことにより、上記ナノワイヤを上記基板の上記表面上にパターン化するステップとを含むことを特徴とする。
【選択図】図1
Description
図2(a)は、フッ化バリウム犠牲層の結晶学的性質(crystallographic properties)を示す。
本発明者は、上記した工程、例えば、図1に示した工程にしたがって、ナノワイヤを成長及びパターニングする実験を行った。ナノワイヤの成長に係る条件を除き、その他の工程は、図1に示した工程と同様である。ナノワイヤの成長に係る条件は、次の表1のとおりである。
Claims (14)
- 基板の表面にナノワイヤをパターニングする方法であって、
(a)前記表面に、フッ化バリウム犠牲層が所望のパターンで形成された前記基板を提供するステップと、
(b)前記フッ化バリウム犠牲層を含む前記基板の表面全体にわたって、ナノワイヤを成長させるステップと、
(c)溶媒によって前記フッ化バリウム犠牲層を除去することにより、前記フッ化バリウム犠牲層の表面に存在する前記ナノワイヤごと除去して、前記基板の前記表面に直接接触した状態の前記ナノワイヤを残すことにより、前記ナノワイヤを前記基板の前記表面上にパターン化するステップとを含むことを特徴とする方法。 - 前記(a)のステップにおいて、前記基板は、(a−1)前記基板の前記表面にフォトレジストをコーティングするステップと、(a−2)コーティングされた前記フォトレジストをパターニングするステップと、(a−3)パターン化された前記フォトレジストを含む前記基板の前記表面全体にわたって、フッ化バリウムを熱蒸着によって成長させて、前記フッ化バリウム犠牲層を形成するステップと、(a−4)パターン化された前記フォトレジストをリフトオフ法によって除去することにより、前記フォトレジストの表面に存在する前記フッ化バリウム犠牲層ごと除去して、前記基板の前記表面に直接接触した状態の前記フッ化バリウム犠牲層を残すことにより、前記所望のパターンの前記フッ化バリウム犠牲層を、前記基板の前記表面に形成するステップとを行うことにより提供されることを特徴とする請求項1に記載の方法。
- 前記(a−4)ステップにおいて、パターン化された前記フォトレジストは、アセトンを利用して除去されることを特徴とする請求項2に記載の方法。
- 前記(a)のステップにおいて、前記基板は、フッ化バリウムを熱蒸着によって、前記基板の前記表面に成長させて、前記フッ化バリウム犠牲層を得た後、成長させた前記フッ化バリウム犠牲層を所望のパターンにパターニングするステップを行うことにより提供されることを特徴とする請求項1に記載の方法。
- 前記(a)のステップにおいて、前記基板は、フッ化バリウムをCVD法を用いて、前記基板の前記表面に形成して、前記フッ化バリウム犠牲層を得た後、形成された前記フッ化バリウム犠牲層を所望のパターンにパターニングするステップを行うことにより提供されることを特徴とする請求項1に記載の方法。
- 前記フッ化バリウム犠牲層の前記表面は、多結晶性または非晶質性の表面であることを特徴とする請求項1ないし5のいずれかに記載の方法。
- 前記フッ化バリウム犠牲層は、常温〜1500℃の温度で安定した特性を示すことを特徴とする請求項6に記載の方法。
- 前記(b)のステップにおいて、前記ナノワイヤは、ZnOナノワイヤ、GaNナノワイヤまたはシリコンナノワイヤであることを特徴とする請求項1ないし5のいずれかに記載の方法。
- 前記ナノワイヤを、CVD法またはファーネス法によって成長させることを特徴とする請求項8に記載の方法。
- 前記(c)のステップにおいて、前記フッ化バリウム犠牲層は、脱イオン水によって除去されることを特徴とする請求項1ないし5のいずれかに記載の方法。
- 基板の表面へのナノワイヤのパターニングに使用される犠牲層を形成する犠牲層用物質であって、
前記犠牲層用物質は、フッ化バリウムであることを特徴とする犠牲層用物質。 - 前記フッ化バリウムからなる前記犠牲層は、常温〜1500℃の温度で安定した特性を示すことを特徴とする請求項11に記載の犠牲層用物質。
- 前記フッ化バリウムからなる前記犠牲層は、脱イオン水の溶媒によって溶解して除去されることを特徴とする請求項11または12に記載の犠牲層用物質。
- 前記フッ化バリウムからなる前記犠牲層は、アセトンに対して安定性を示すことを特徴とする請求項13に記載の犠牲層用物質。
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KR1020080112055A KR101064908B1 (ko) | 2008-11-12 | 2008-11-12 | 신규의 희생층 재료를 이용한 기판 상에서의 나노와이어 패터닝 방법 |
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CN109279572A (zh) * | 2018-11-19 | 2019-01-29 | 中国科学技术大学 | 超导真空桥及其制备方法 |
FR3130072A1 (fr) | 2021-12-07 | 2023-06-09 | Aledia | Procédé de fabrication d’un dispositif optoélectronique |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050127421A1 (en) * | 2002-01-30 | 2005-06-16 | Infineon Technologies Ag | Semiconductor module having an insulation layer and method for fabricating a semiconductor module having an insulation layer |
JP2008162885A (ja) * | 2007-01-03 | 2008-07-17 | Samsung Electronics Co Ltd | 超音波エネルギーを利用したZnOナノワイヤの製造方法 |
Family Cites Families (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US548586A (en) * | 1895-10-22 | Water-meter | ||
US4578768A (en) * | 1984-04-06 | 1986-03-25 | Racine Marsh V | Computer aided coordinate digitizing system |
US4870576A (en) * | 1986-03-19 | 1989-09-26 | Realpro, Ltd. | Real estate search and location system and method |
US4878125A (en) * | 1987-01-08 | 1989-10-31 | Canon Kabushiki Kaisha | Method and apparatus for image processing with fed-back error correction |
US5050095A (en) * | 1988-05-31 | 1991-09-17 | Honeywell Inc. | Neural network auto-associative memory with two rules for varying the weights |
EP0384689B1 (en) * | 1989-02-20 | 1997-12-29 | Fujitsu Limited | A learning system and learning method for a data processing apparatus |
US5129038A (en) * | 1989-02-23 | 1992-07-07 | Matsushita Electric Industrial Co., Ltd. | Neural network with selective error reduction to increase learning speed |
JP2533942B2 (ja) * | 1989-03-13 | 1996-09-11 | 株式会社日立製作所 | 知識抽出方法およびプロセス運転支援システム |
US5310696A (en) * | 1989-06-16 | 1994-05-10 | Massachusetts Institute Of Technology | Chemical method for the modification of a substrate surface to accomplish heteroepitaxial crystal growth |
US5189606A (en) * | 1989-08-30 | 1993-02-23 | The United States Of America As Represented By The Secretary Of The Air Force | Totally integrated construction cost estimating, analysis, and reporting system |
US5712985A (en) * | 1989-09-12 | 1998-01-27 | Lee; Michael D. | System and method for estimating business demand based on business influences |
JP2978184B2 (ja) * | 1989-10-06 | 1999-11-15 | 株式会社日立製作所 | 制御ルール作成装置 |
US5239470A (en) * | 1990-02-08 | 1993-08-24 | Yazaki Corporation | Data recording method and device |
US5262941A (en) * | 1990-03-30 | 1993-11-16 | Itt Corporation | Expert credit recommendation method and system |
US5862304A (en) * | 1990-05-21 | 1999-01-19 | Board Of Regents, The University Of Texas System | Method for predicting the future occurrence of clinically occult or non-existent medical conditions |
EP0468229A3 (en) * | 1990-07-27 | 1994-01-26 | Hnc Inc | A neural network with expert system functionality |
US5212765A (en) * | 1990-08-03 | 1993-05-18 | E. I. Du Pont De Nemours & Co., Inc. | On-line training neural network system for process control |
US5142612A (en) * | 1990-08-03 | 1992-08-25 | E. I. Du Pont De Nemours & Co. (Inc.) | Computer neural network supervisory process control system and method |
US5167009A (en) * | 1990-08-03 | 1992-11-24 | E. I. Du Pont De Nemours & Co. (Inc.) | On-line process control neural network using data pointers |
JP2539540B2 (ja) * | 1990-09-19 | 1996-10-02 | 株式会社日立製作所 | プロセス制御装置 |
US5347446A (en) * | 1991-02-08 | 1994-09-13 | Kabushiki Kaisha Toshiba | Model predictive control apparatus |
US5634087A (en) * | 1991-02-28 | 1997-05-27 | Rutgers University | Rapidly trainable neural tree network |
US5236673A (en) * | 1991-04-15 | 1993-08-17 | Reztek International, Inc. | Ozonation system for treatment of water in cooling towers |
US5313204A (en) * | 1991-04-25 | 1994-05-17 | Mitsubishi Denki Kabushiki Kaisha | Encoding and decoding devices with predictor and detector |
US5339257A (en) * | 1991-05-15 | 1994-08-16 | Automated Technology Associates Inc. | Real-time statistical process monitoring system |
US5214746A (en) * | 1991-06-17 | 1993-05-25 | Orincon Corporation | Method and apparatus for training a neural network using evolutionary programming |
US5253331A (en) * | 1991-07-03 | 1993-10-12 | General Motors Corporation | Expert system for statistical design of experiments |
JPH0567119A (ja) * | 1991-07-12 | 1993-03-19 | Hitachi Ltd | 商品分析システム |
US5251131A (en) * | 1991-07-31 | 1993-10-05 | Thinking Machines Corporation | Classification of data records by comparison of records to a training database using probability weights |
US5276771A (en) * | 1991-12-27 | 1994-01-04 | R & D Associates | Rapidly converging projective neural network |
US5414621A (en) * | 1992-03-06 | 1995-05-09 | Hough; John R. | System and method for computing a comparative value of real estate |
US5331544A (en) * | 1992-04-23 | 1994-07-19 | A. C. Nielsen Company | Market research method and system for collecting retail store and shopper market research data |
US5353207A (en) * | 1992-06-10 | 1994-10-04 | Pavilion Technologies, Inc. | Residual activation neural network |
US5402333A (en) * | 1992-06-15 | 1995-03-28 | E. I. Du Pont De Nemours & Co., Inc. | System and method for improving model product property estimates |
US5819226A (en) * | 1992-09-08 | 1998-10-06 | Hnc Software Inc. | Fraud detection using predictive modeling |
US5740033A (en) * | 1992-10-13 | 1998-04-14 | The Dow Chemical Company | Model predictive controller |
US5361201A (en) * | 1992-10-19 | 1994-11-01 | Hnc, Inc. | Real estate appraisal using predictive modeling |
US5940811A (en) * | 1993-08-27 | 1999-08-17 | Affinity Technology Group, Inc. | Closed loop financial transaction method and apparatus |
US5680305A (en) * | 1995-02-16 | 1997-10-21 | Apgar, Iv; Mahlon | System and method for evaluating real estate |
US5949044A (en) * | 1997-06-13 | 1999-09-07 | Walker Asset Management Limited Partnership | Method and apparatus for funds and credit line transfers |
US6021397A (en) * | 1997-12-02 | 2000-02-01 | Financial Engines, Inc. | Financial advisory system |
US7310618B2 (en) * | 2000-02-22 | 2007-12-18 | Lehman Brothers Inc. | Automated loan evaluation system |
US7528908B2 (en) * | 2002-06-04 | 2009-05-05 | Toray Industries, Inc. | Color filter for liquid crystal display and semitransmission liquid crystal display |
US7571140B2 (en) * | 2002-12-16 | 2009-08-04 | First Data Corporation | Payment management |
WO2005072089A2 (en) * | 2003-12-11 | 2005-08-11 | The Penn State Research Foundation | Controlled nanowire in permanent integrated nano-templates and method of fabricating sensor and transducer structures |
US7105428B2 (en) * | 2004-04-30 | 2006-09-12 | Nanosys, Inc. | Systems and methods for nanowire growth and harvesting |
KR100809929B1 (ko) | 2006-09-08 | 2008-03-06 | 한국과학기술원 | 나노 와이어 제조방법 |
US8347726B2 (en) * | 2007-04-25 | 2013-01-08 | Hewlett-Packard Development Company, L.P. | Free-standing nanowire sensor and methods for forming and using the same |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050127421A1 (en) * | 2002-01-30 | 2005-06-16 | Infineon Technologies Ag | Semiconductor module having an insulation layer and method for fabricating a semiconductor module having an insulation layer |
JP2008162885A (ja) * | 2007-01-03 | 2008-07-17 | Samsung Electronics Co Ltd | 超音波エネルギーを利用したZnOナノワイヤの製造方法 |
Non-Patent Citations (2)
Title |
---|
JPN6011069454; S. Mukherjee: 'Strain oriented microstructural change during the fabricationof free-standing PbSe micro-rods' J Mater Sci: Mater Electron Volume 19, Number 3, 200803, pp.237-240 * |
JPN6011069456; Paulo H. O. Rappl: 'Development of a Novel Epitaxial-LayerSegmentation Method for OptoelectronicDevice Fabrication' IEEE PHOTONICS TECHNOLOGY LETTERS VOL.15, NO.3,, 200303, pp.374-376 * |
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KR20100053081A (ko) | 2010-05-20 |
JP5147743B2 (ja) | 2013-02-20 |
KR101064908B1 (ko) | 2011-09-16 |
US8227348B2 (en) | 2012-07-24 |
US20100116780A1 (en) | 2010-05-13 |
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