JP2010109091A - Semiconductor device, method of manufacturing the same, and electronic apparatus using semiconductor device - Google Patents

Semiconductor device, method of manufacturing the same, and electronic apparatus using semiconductor device Download PDF

Info

Publication number
JP2010109091A
JP2010109091A JP2008278637A JP2008278637A JP2010109091A JP 2010109091 A JP2010109091 A JP 2010109091A JP 2008278637 A JP2008278637 A JP 2008278637A JP 2008278637 A JP2008278637 A JP 2008278637A JP 2010109091 A JP2010109091 A JP 2010109091A
Authority
JP
Japan
Prior art keywords
recess
semiconductor element
semiconductor device
heat
heat radiating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2008278637A
Other languages
Japanese (ja)
Inventor
Masanori Nano
匡紀 南尾
Nobuyuki Koya
信之 幸谷
Yukihiro Kosaka
幸広 小坂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Panasonic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp filed Critical Panasonic Corp
Priority to JP2008278637A priority Critical patent/JP2010109091A/en
Publication of JP2010109091A publication Critical patent/JP2010109091A/en
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto

Abstract

<P>PROBLEM TO BE SOLVED: To suppress an operation failure of a semiconductor element due to a thermal reason by stabilizing thermal conduction from the semiconductor element to a radiator plate through heat radiation grease. <P>SOLUTION: This semiconductor device includes: a radiator plate 3 having a recess 3a at least on one surface; heat radiation grease 6 filled in the recess 3a of the radiator plate 3; a semiconductor element 1 with at least a part thereof arranged in the recess 3a while contacting the heat radiation grease 6; and a wiring member 2 electrically connected to the semiconductor element 1 and arranged in an outer peripheral part of the recess 3a. The semiconductor device further includes an energization body 4 arranged on the side opposite to the recess 3a of the radiator plate 3 with respect to the semiconductor element 1 for energizing the semiconductor element 1 toward the inside of the recess 3a, and the energization body 4 is attached to the outer peripheral part of the recess 3a of the radiator plate 3 by an attachment means 5. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、配線部材に搭載された半導体素子からの放熱効率を高めた半導体装置の構成及びその製造方法、並びにそれを用いた電子機器に関する。   The present invention relates to a configuration of a semiconductor device with improved heat dissipation efficiency from a semiconductor element mounted on a wiring member, a manufacturing method thereof, and an electronic apparatus using the same.

半導体素子は、大きな電流を流すことが可能になったことから、発熱が非常に大きくなる場合があり、そのため放熱対策が重要になってきた。   Since it has become possible for a semiconductor element to pass a large current, heat generation may become very large, and therefore measures for heat dissipation have become important.

例えば、特許文献1の図3に記載された半導体装置では、次のような放熱対策をとっていた。すなわち、凹部を有する放熱板を設け、この凹部内に放熱グリスを充填して、半導体素子を放熱グリスに接触するように配置する。それにより、放熱グリスを介して半導体素子と放熱板が熱伝導可能状態に結合された構造とし、放熱効率を向上させる。
特開平4−99051号公報
For example, in the semiconductor device described in FIG. 3 of Patent Document 1, the following heat dissipation measures have been taken. That is, a heat radiating plate having a concave portion is provided, and the heat radiating grease is filled in the concave portion, and the semiconductor element is disposed in contact with the heat radiating grease. Thereby, a structure in which the semiconductor element and the heat radiating plate are coupled in a thermally conductive state via the heat radiating grease is provided, and the heat radiating efficiency is improved.
Japanese Patent Laid-Open No. 4-99051

しかし、上記従来例の放熱対策の場合、放熱グリスを介しての半導体素子から放熱板への熱伝導は不安定であり、その結果として、半導体素子の動作不良が発生する惧れがあるという問題があった。   However, in the case of the heat dissipation countermeasure of the above conventional example, the heat conduction from the semiconductor element to the heat sink via the heat dissipation grease is unstable, and as a result, the semiconductor element may malfunction. was there.

このような、放熱グリスを介しての半導体素子から放熱板への熱伝導を安定化するためには、半導体素子と放熱グリスとの接触が安定していることが非常に重要である。しかし、単に放熱グリスに半導体素子を当接させた状態では、個々の製品(半導体装置)ごとに半導体素子と放熱グリスとの接触面積が異なるために、この接触面積が小さなものは熱伝導がスムーズに行われず、その結果として半導体素子の動作不良が発生する場合があった。   In order to stabilize the heat conduction from the semiconductor element to the heat dissipation plate through the heat dissipation grease, it is very important that the contact between the semiconductor element and the heat dissipation grease is stable. However, when the semiconductor element is simply in contact with the heat dissipation grease, the contact area between the semiconductor element and the heat dissipation grease differs for each product (semiconductor device). As a result, a malfunction of the semiconductor element may occur.

そこで本発明は、放熱グリスを介しての半導体素子から放熱板への熱伝導を安定化させて、熱的理由による半導体素子の動作不良を抑制することを目的とする。   In view of the above, an object of the present invention is to stabilize the heat conduction from the semiconductor element to the heat sink through the heat dissipation grease, thereby suppressing the malfunction of the semiconductor element due to thermal reasons.

本発明の半導体装置は、少なくとも一表面に凹部を有する放熱板と、前記放熱板の前記凹部内に充填された放熱グリスと、前記放熱グリスと接触した状態で、少なくともその一部が前記凹部内に配置された半導体素子と、前記半導体素子に電気的に接続されるとともに、前記凹部の外周部に配置された配線部材とを備え、上記課題を解決するために、前記半導体素子に対して、前記放熱板の凹部とは反対側に配置され、前記半導体素子を前記凹部内に向かって付勢する付勢体を備え、前記付勢体は、前記放熱板における前記凹部の外周部分に取付具により取り付けられたことを特徴とする。   The semiconductor device of the present invention includes a heat sink having a recess on at least one surface, a heat dissipation grease filled in the recess of the heat sink, and at least a part of the heat sink in the recess. In order to solve the above-described problem, the semiconductor element is provided with a semiconductor element disposed on the wiring board and a wiring member that is electrically connected to the semiconductor element and disposed on the outer periphery of the recess. A biasing member disposed on the opposite side of the recess of the heat sink and biasing the semiconductor element toward the recess; and the biasing member is attached to an outer peripheral portion of the recess of the heat sink It is attached by.

また、本発明の半導体装置の製造方法は、少なくとも一表面に凹部を有する放熱板と、前記放熱板の前記凹部内に充填された放熱グリスと、前記放熱グリスと接触した状態で、少なくともその一部が前記凹部内に配置された半導体素子と、前記半導体素子に電気的に接続されるとともに、前記凹部の外周部に配置された配線部材とを備えた半導体装置の製造方法であって、前記配線部材に搭載された前記半導体素子を、前記放熱グリスと接触するように前記放熱板の前記凹部内に配置し、前記半導体素子に対して、前記放熱板の凹部とは反対側に付勢体を配置し、前記付勢体を、前記放熱板における前記凹部の外周部分に前記取付具により取り付けることにより、前記半導体素子を前記凹部内に向かって付勢することを特徴とする。   Further, the method of manufacturing a semiconductor device according to the present invention includes at least one of a heat sink having a recess on at least one surface thereof, heat dissipation grease filled in the recess of the heat sink, and in contact with the heat dissipation grease. A method of manufacturing a semiconductor device comprising: a semiconductor element having a portion disposed in the recess; and a wiring member electrically connected to the semiconductor element and disposed in an outer peripheral portion of the recess, The semiconductor element mounted on the wiring member is disposed in the concave portion of the heat radiating plate so as to be in contact with the heat radiating grease, and is biased to the semiconductor element on the side opposite to the concave portion of the heat radiating plate. The semiconductor element is urged toward the inside of the recess by attaching the urging body to the outer peripheral portion of the recess in the heat radiating plate with the fixture.

上記構成の半導体装置およびその製造方法によれば、半導体素子を凹部内に向かって付勢する付勢体が、放熱板における凹部の外周部分に取り付けられることにより、半導体素子が凹部内の放熱グリスに押し付けられる。そのため、半導体素子と放熱グリスとの接触状態が安定化し、その結果として半導体素子の熱は放熱グリスを介して放熱板に効率的に伝達される。これにより、熱的理由による半導体素子の動作不良を抑制することができる。   According to the semiconductor device having the above-described configuration and the manufacturing method thereof, the biasing body that biases the semiconductor element into the recess is attached to the outer peripheral portion of the recess in the heat sink, so that the semiconductor element is in the heat dissipation grease in the recess. Pressed against. Therefore, the contact state between the semiconductor element and the heat dissipation grease is stabilized, and as a result, the heat of the semiconductor element is efficiently transferred to the heat dissipation plate through the heat dissipation grease. Thereby, the malfunction of the semiconductor element due to thermal reasons can be suppressed.

本発明の半導体装置およびその製造方法は、上記構成を基本として、以下のような態様をとることができる。   The semiconductor device and the manufacturing method thereof according to the present invention can take the following aspects based on the above configuration.

すなわち、上記構成の半導体装置において、前記配線部材は前記付勢体とともに、前記取付具により前記放熱板における前記凹部の外周部分に取り付けられることが好ましい。   That is, in the semiconductor device having the above-described configuration, it is preferable that the wiring member is attached to the outer peripheral portion of the concave portion of the heat radiating plate together with the biasing body by the fixture.

また、前記取付具はネジにより構成され、前記ネジをネジ止めするネジ穴は、前記放熱板における前記凹部の外周部分に形成された構成とすることができる。前記ネジ穴は、前記凹部の両側に形成されることが好ましい。   Moreover, the said fixture is comprised with a screw | thread, The screw hole which screws the said screw | screw can be set as the structure formed in the outer peripheral part of the said recessed part in the said heat sink. The screw holes are preferably formed on both sides of the recess.

また、前記凹部及び前記半導体素子は長形形状であり、前記付勢体は、前記凹部の長形形状とは直交する方向に延在する長形形状である構成とすることができる。その場合、前記付勢体の前記凹部の長手方向に対応する寸法が、前記凹部の長手方向の寸法よりも小さく、前記凹部の長手方向両端部が前記付勢体から露出している構成とすることが好ましい。   Moreover, the said recessed part and the said semiconductor element are oblong shapes, and the said biasing body can be set as the structure which is an elongate shape extended in the direction orthogonal to the oblong shape of the said recessed part. In that case, the dimension corresponding to the longitudinal direction of the said recessed part of the said urging | biasing body is smaller than the dimension of the longitudinal direction of the said recessed part, and it is set as the structure which the longitudinal direction both ends of the said recessed part are exposed from the said urging | biasing body. It is preferable.

また、前記半導体素子と前記配線部材の電気的接続部分が保護樹脂体で被覆され、前記半導体素子は、前記保護樹脂体を介して前記凹部内に向かって付勢された構成とすることができる。前記保護樹脂体は、前記半導体素子の前記凹部とは反対側を被覆し、前記保護樹脂体の外周形状が前記凹部の内周形状よりも小さいことが好ましい。   Moreover, the electrical connection part of the said semiconductor element and the said wiring member is coat | covered with the protective resin body, and the said semiconductor element can be set as the structure urged | biased in the said recessed part via the said protective resin body. . Preferably, the protective resin body covers the opposite side of the semiconductor element from the concave portion, and the outer peripheral shape of the protective resin body is smaller than the inner peripheral shape of the concave portion.

前記付勢体及び前記取付具は熱伝導性材料により形成されることが好ましい。また、前記付勢体、前記取付具、及び前記放熱板は金属により構成することができる。   It is preferable that the urging body and the fixture are formed of a heat conductive material. Moreover, the said urging | biasing body, the said fixture, and the said heat sink can be comprised with a metal.

上記構成の半導体装置の製造方法において、前記取付具としてネジを用い、前記ネジを、前記放熱板における前記凹部の外周部分に形成したネジ穴にネジ止めすることができる。   In the method for manufacturing a semiconductor device having the above-described configuration, a screw may be used as the fixture, and the screw may be screwed into a screw hole formed in an outer peripheral portion of the recess in the heat sink.

また、前記配線部材を前記付勢体とともに、前記取付具により前記放熱板における前記凹部の外周部分に取り付けることが好ましい。   Moreover, it is preferable to attach the said wiring member to the outer peripheral part of the said recessed part in the said heat sink with the said biasing body with the said fixture.

上記いずれかの構成の半導体装置を複数個備え、前記複数個の半導体装置が平面状に配置された電子機器を構成することができる。   An electronic apparatus including a plurality of the semiconductor devices having any one of the above-described configurations and having the plurality of semiconductor devices arranged in a planar shape can be configured.

以下、本発明の一実施の形態における半導体装置及びその製造方法について、図面を参照しながら説明する。   Hereinafter, a semiconductor device and a manufacturing method thereof according to an embodiment of the present invention will be described with reference to the drawings.

図1は、本実施の形態の半導体装置を示す平面図である。この半導体装置は、TV用の駆動回路として用いられる場合の例であり、これがTV画面の全周に複数個、平面状に配置され、画像を形成すべく駆動される。   FIG. 1 is a plan view showing the semiconductor device of the present embodiment. This semiconductor device is an example of a case where it is used as a driving circuit for a TV, and a plurality of such semiconductor devices are arranged in a plane on the entire periphery of the TV screen and are driven to form an image.

図1に示す半導体装置は、半導体素子1と、半導体素子1に電気的に接続された配線部材2と、少なくとも一表面に凹部3aを有する金属製の放熱板3と、半導体素子1及び配線部材2を介在させて放熱板3に取り付けられた付勢体4とを備えている。   The semiconductor device shown in FIG. 1 includes a semiconductor element 1, a wiring member 2 electrically connected to the semiconductor element 1, a metal radiator plate 3 having a recess 3a on at least one surface, the semiconductor element 1, and the wiring member. 2 and an urging body 4 attached to the heat radiating plate 3.

配線部材2は、平面形状が略四角形状であり、図1における上側の端部にはTV画面内に向けた表示部接続端子2aが設けられ、図1における下側の端部にはTV画面外に向けた外部接続端子2bが設けられている。配線部材2は、放熱板3の凹部3aの外周部に配置されている。   The wiring member 2 has a substantially quadrangular planar shape, and an upper end portion in FIG. 1 is provided with a display unit connection terminal 2a facing the inside of the TV screen, and a lower end portion in FIG. An external connection terminal 2b facing outward is provided. The wiring member 2 is disposed on the outer peripheral portion of the recess 3 a of the heat radiating plate 3.

放熱板3は、図1における左右方向に長くなった長形形状を有し、その左右の中心部分に凹部3aが設けられている。凹部3aは、図1における上下方向に長くなった長形形状を有する。半導体素子1も図1における上下方向に長くなった長形形状を有し、その下部が凹部3a内に収納されている。放熱板3には、電子機器への取付のための取付孔3bが設けられている。   The heat radiating plate 3 has an elongated shape that is elongated in the left-right direction in FIG. 1, and a recess 3 a is provided in the center portion on the left and right. The recess 3a has an elongated shape that is elongated in the vertical direction in FIG. The semiconductor element 1 also has an elongated shape elongated in the vertical direction in FIG. 1, and the lower part thereof is housed in the recess 3a. The heat radiating plate 3 is provided with an attachment hole 3b for attachment to an electronic device.

付勢体4は、放熱板3の凹部3aの外周部に取付具5により取り付けられ、それにより、
半導体素子1を凹部3a内下方向に付勢している。
The urging body 4 is attached to the outer peripheral portion of the recess 3a of the heat radiating plate 3 by a fixture 5, thereby
The semiconductor element 1 is urged downward in the recess 3a.

図1における円Aで示した領域の拡大平面図を、付勢体4を除去した状態で図2に示す。また、図2におけるB−B線に沿った拡大断面図を図3に示す。   FIG. 2 shows an enlarged plan view of the region indicated by the circle A in FIG. 1 with the biasing body 4 removed. Moreover, the expanded sectional view along the BB line in FIG. 2 is shown in FIG.

図2、図3に示すように、放熱板3の凹部3a内には放熱グリス6が充填されている。半導体素子1は、この放熱グリス6に下部が浸漬状態で接触するように、少なくともその下部が凹部3a内に配置されている。   As shown in FIGS. 2 and 3, heat radiation grease 6 is filled in the recess 3 a of the heat radiation plate 3. At least the lower part of the semiconductor element 1 is disposed in the recess 3a so that the lower part of the semiconductor element 1 is in contact with the heat-dissipating grease 6 in an immersed state.

また、図2、図3に示すように、半導体素子1はその上面側に電極1aを有し、電極1aにはバンプ7を介して、配線部材2を構成する配線8の先端のインナーリード8aが電気的に接続されている。この電気的接続部分を覆うように、半導体素子1の上部は保護樹脂体9で覆われている。この保護樹脂体9の外周形状は、凹部3aの内周形状よりも小さい長形形状(半導体素子1と同じく図2における上下方向の長形形状)である。   As shown in FIGS. 2 and 3, the semiconductor element 1 has an electrode 1a on the upper surface side, and the electrode 1a has an inner lead 8a at the tip of the wiring 8 constituting the wiring member 2 via a bump 7. Are electrically connected. The upper portion of the semiconductor element 1 is covered with a protective resin body 9 so as to cover this electrical connection portion. The outer peripheral shape of the protective resin body 9 is an elongated shape (the elongated shape in the vertical direction in FIG. 2 as in the semiconductor element 1) smaller than the inner peripheral shape of the recess 3a.

平面形状が略四角形状の配線部材2は、図3に示すように、可撓性のテープ基材2c上に複数の配線8が配置され、その上面がレジスト2dで覆われた構成となっており、全体としても十分な可撓性を有する。凹部3aの外周部には接着シート10が貼り付けられており、テープ基材2cにおける凹部3aの外周部は、接着シート10により放熱板3に接合されている。   As shown in FIG. 3, the wiring member 2 having a substantially quadrangular planar shape has a configuration in which a plurality of wirings 8 are arranged on a flexible tape substrate 2c and the upper surface thereof is covered with a resist 2d. And has sufficient flexibility as a whole. The adhesive sheet 10 is affixed to the outer peripheral part of the recessed part 3a, and the outer peripheral part of the recessed part 3a in the tape base material 2c is joined to the heat sink 3 by the adhesive sheet 10.

取付具5は、金属製のネジ5aにより構成され、放熱板3には、このネジ5aをネジ止めするネジ穴3cが設けられている。   The fixture 5 is composed of a metal screw 5a, and the heat radiating plate 3 is provided with a screw hole 3c for fastening the screw 5a.

次に、図1〜図3に示した構成を有する半導体装置を製造する工程について、図4〜図6を参照して説明する。   Next, a process for manufacturing the semiconductor device having the configuration shown in FIGS. 1 to 3 will be described with reference to FIGS.

先ず、図4に示すように、放熱板3の凹部3aの外周部に接着シート10が貼り付けられたものを用意する。そして、凹部3a内に、流動状態の放熱グリス6を充填する。   First, as shown in FIG. 4, one in which an adhesive sheet 10 is attached to the outer peripheral portion of the recess 3 a of the heat radiating plate 3 is prepared. Then, the heat radiation grease 6 in a fluid state is filled in the recess 3a.

次に、図5に示すように、配線部材2に搭載された半導体素子1を、凹部3a内において、未だ流動状態にある放熱グリス6を押しつぶしながら、凹部3a内下方へと軽く押し込んで降下させる。この時、半導体素子1は、上述したように配線部材2のインナーリード8aと電気的に接続され、その電気的接続部分を覆うように、半導体素子1の上部は保護樹脂体9で覆われている。   Next, as shown in FIG. 5, the semiconductor element 1 mounted on the wiring member 2 is lowered by pushing lightly downward in the recess 3 a while crushing the heat-dissipating grease 6 which is still in the fluid state in the recess 3 a. . At this time, the semiconductor element 1 is electrically connected to the inner lead 8a of the wiring member 2 as described above, and the upper portion of the semiconductor element 1 is covered with the protective resin body 9 so as to cover the electrical connection portion. Yes.

その後、図6に示すように、保護樹脂体9上に、半導体素子1を凹部3a内下方向に付勢するように付勢体4を戴置する。次に、図6には示されていないが、この付勢体4を、取付具5により前記凹部3a外周の放熱板3部分に取り付ける。ネジ5aをネジ穴3cにネジ止めした完成状態は、図1、図3に示されている。   Thereafter, as shown in FIG. 6, the urging body 4 is placed on the protective resin body 9 so as to urge the semiconductor element 1 downward in the recess 3 a. Next, although not shown in FIG. 6, the urging body 4 is attached to the heat radiating plate 3 portion on the outer periphery of the concave portion 3 a by the fixture 5. A completed state in which the screw 5a is screwed into the screw hole 3c is shown in FIGS.

次に、以上のような半導体装置の構成、およびその製造工程によって得られる効果について説明する。   Next, the configuration of the semiconductor device as described above and the effects obtained by the manufacturing process will be described.

先ず、図3に示すようにネジ5aをネジ穴3cにネジ止めすると、半導体素子1は保護樹脂体9を介して、付勢体4によって凹部3a内の放熱グリス6に押圧付勢される。半導体素子1に電気的に接続された配線部材2では、半導体素子1を覆った保護樹脂体9の外方には、十分な可撓性が保持されている。そのため、半導体素子1が保護樹脂体9を介し付勢体4によって凹部3a内下方に押圧されると、配線部材2の保護樹脂体9外方が下方向に撓む。これによって半導体素子1は図6のように、放熱グリス6に押圧付勢されることになる。   First, as shown in FIG. 3, when the screw 5 a is screwed into the screw hole 3 c, the semiconductor element 1 is pressed and urged by the urging body 4 to the heat radiation grease 6 through the protective resin body 9. In the wiring member 2 electrically connected to the semiconductor element 1, sufficient flexibility is maintained outside the protective resin body 9 covering the semiconductor element 1. Therefore, when the semiconductor element 1 is pressed downward in the recess 3 a by the urging body 4 through the protective resin body 9, the outer side of the protective resin body 9 of the wiring member 2 bends downward. As a result, the semiconductor element 1 is pressed and urged against the heat radiation grease 6 as shown in FIG.

また、付勢体4は、図1からも理解されるように、長形形状の凹部3aとは直交する方向(図1の左右方向)に延在した長形形状となっている。従って、この長形形状の左右部分をネジ5aでネジ穴3cにネジ止めすると、この平板状の付勢体4によって、半導体素子1は図3のように、水平状態が略保たれた状態で放熱グリス6に押圧付勢される。   Further, as is understood from FIG. 1, the urging body 4 has a long shape extending in a direction (left and right direction in FIG. 1) perpendicular to the long concave portion 3 a. Accordingly, when the left and right portions of the elongated shape are screwed into the screw holes 3c with the screws 5a, the semiconductor element 1 is maintained in a substantially horizontal state as shown in FIG. The heat radiating grease 6 is pressed and urged.

この結果、半導体素子1と放熱グリス6の接触面積が広い状態で安定し、これにより半導体素子1の発熱は、放熱グリス6を介して放熱板3に効果的に伝達される。そのため、熱的理由による半導体素子1の動作不良を抑制することができる。   As a result, the contact area between the semiconductor element 1 and the heat radiating grease 6 is stabilized in a wide state, whereby heat generated by the semiconductor element 1 is effectively transmitted to the heat radiating plate 3 through the heat radiating grease 6. Therefore, the malfunction of the semiconductor element 1 due to thermal reasons can be suppressed.

また、付勢体4自身も金属製とし、これを止めるネジ5aも金属製とすることにより、付勢体4に伝達された半導体素子1の熱も、この付勢体4、ネジ5aを介して放熱板3に伝達させることができる。この点からも、熱的理由による半導体素子1の動作不良を抑制することができる。   Further, since the urging body 4 itself is also made of metal and the screw 5a for stopping the urging body 4 is also made of metal, the heat of the semiconductor element 1 transmitted to the urging body 4 is also transmitted through the urging body 4 and the screw 5a. Can be transmitted to the heat sink 3. Also from this point, the malfunction of the semiconductor element 1 due to thermal reasons can be suppressed.

なお、ネジ5aをネジ穴3cにネジ止めする時には、このネジ5aが配線部材2を貫通する状態となる。これに対して、配線部材2のネジ5a貫通部においては、配線8を避けた状態になるように構成されている。そのため、熱伝達を考慮してネジ5aを金属製としても、電気的な短絡を回避することができる。   When the screw 5a is screwed into the screw hole 3c, the screw 5a passes through the wiring member 2. On the other hand, the screw 5a penetrating portion of the wiring member 2 is configured to avoid the wiring 8. Therefore, even if the screw 5a is made of metal in consideration of heat transfer, an electrical short circuit can be avoided.

また、ネジ5aをネジ穴3cにネジ止めすれば、図1に示すように、放熱板3に配線部材2と付勢体4を同時に取り付けることが出来る。従って、作業性がよく、しかも上述のように付勢体4を介しての放熱効果も得られので、この構成とすることにより、同時に複数の特有の効果が得られる。   If the screw 5a is screwed into the screw hole 3c, the wiring member 2 and the urging member 4 can be attached to the heat radiating plate 3 at the same time as shown in FIG. Accordingly, the workability is good, and the heat dissipation effect through the biasing body 4 is also obtained as described above. By adopting this configuration, a plurality of specific effects can be obtained at the same time.

さらに、ネジ5aをネジ穴3cにネジ止めするときには、例えば電動ドライバーを使用することができ、その際、電動ドライバーの振動が付勢体4を介して半導体素子1に伝わる。それにより、半導体素子1は振動を受けながら放熱グリス6に浸漬されることとなるので、この半導体素子1の底面と下部外周面に放熱グリス6がより密着し易くなる。この結果、半導体素子1の発熱を効果的に、放熱グリス6を介して放熱板3に伝達することが出来、熱的理由による半導体素子1の動作不良を抑制する効果が十分に得られる。   Furthermore, when screwing the screw 5a into the screw hole 3c, for example, an electric screwdriver can be used, and at that time, vibration of the electric screwdriver is transmitted to the semiconductor element 1 via the biasing body 4. As a result, the semiconductor element 1 is immersed in the heat dissipation grease 6 while receiving vibration, so that the heat dissipation grease 6 is more likely to adhere to the bottom surface and the lower outer peripheral surface of the semiconductor element 1. As a result, the heat generated by the semiconductor element 1 can be effectively transmitted to the heat radiating plate 3 via the heat radiating grease 6, and the effect of suppressing the malfunction of the semiconductor element 1 due to thermal reasons can be sufficiently obtained.

さらに、このような組み立て完成状態において、図1に示すように、長形形状の凹部3aとは直交する方向に配置された長形形状の付勢体4の、凹部3aの長手方向に対応する寸法は、凹部3aの長手方向寸法よりも小さく設定されている。従って、凹部3aの長手方向における付勢体4の両側には、凹部3aが露出することとなる。このため、凹部3a内に放熱グリス6を充填しすぎた場合でも、この充填しすぎた放熱グリス6は凹部3aの露出部から流出することとなる。その結果、上述のとおり平板状の付勢体4により半導体素子1を、図3に示すように水平状態が略保たれた状態で、放熱グリス6に押圧付勢することができる。   Further, in such a completed assembly state, as shown in FIG. 1, the elongated biasing body 4 arranged in a direction orthogonal to the elongated recess 3a corresponds to the longitudinal direction of the recess 3a. The dimension is set smaller than the longitudinal dimension of the recess 3a. Accordingly, the recesses 3a are exposed on both sides of the urging body 4 in the longitudinal direction of the recesses 3a. For this reason, even when the heat radiation grease 6 is excessively filled in the concave portion 3a, the excessive heat radiation grease 6 flows out from the exposed portion of the concave portion 3a. As a result, the semiconductor element 1 can be pressed and urged against the heat radiating grease 6 by the flat plate-like urging body 4 as described above while the horizontal state is substantially maintained as shown in FIG.

本発明の半導体装置及びその製造方法によれば、半導体素子と放熱グリスとの接触状態が安定化し、その結果として半導体素子の熱は放熱グリスを介して放熱板に効率的に伝達されて、熱的理由による半導体素子の動作不良を抑制することができるので、各種電子機器に活用される半導体装置として有用である。   According to the semiconductor device and the manufacturing method thereof of the present invention, the contact state between the semiconductor element and the heat dissipation grease is stabilized, and as a result, the heat of the semiconductor element is efficiently transmitted to the heat dissipation plate through the heat dissipation grease. Since the malfunction of the semiconductor element due to the reason can be suppressed, it is useful as a semiconductor device used in various electronic devices.

本発明の一実施形態における半導体装置を示す平面図The top view which shows the semiconductor device in one Embodiment of this invention 同半導体装置の図1における円Aで示す一部を付勢体4を除去して示す拡大平面図An enlarged plan view showing a part of the semiconductor device indicated by a circle A in FIG. 1 with the biasing body 4 removed. 同半導体装置の図2のB−B線に沿った拡大断面図FIG. 2 is an enlarged cross-sectional view of the semiconductor device taken along line BB in FIG. 同半導体装置の製造方法の一工程を示す断面図Sectional drawing which shows 1 process of the manufacturing method of the same semiconductor device 同製造方法の図4の後の工程を示す断面図Sectional drawing which shows the process after FIG. 4 of the manufacturing method 同製造方法の図5の後の工程を示す断面図Sectional drawing which shows the process after FIG. 5 of the manufacturing method

符号の説明Explanation of symbols

1 半導体素子
2 配線部材
3 放熱板
3a 凹部
3b 取付孔
3c ネジ穴
4 付勢体
5 取付具
5a ネジ
6 放熱グリス
7 バンプ
8a インナーリード
9 保護樹脂体
10 接着シート
DESCRIPTION OF SYMBOLS 1 Semiconductor element 2 Wiring member 3 Heat sink 3a Recess 3b Mounting hole 3c Screw hole 4 Energizing body 5 Mounting tool 5a Screw 6 Radiation grease 7 Bump 8a Inner lead 9 Protective resin body 10 Adhesive sheet

Claims (14)

少なくとも一表面に凹部を有する放熱板と、
前記放熱板の前記凹部内に充填された放熱グリスと、
前記放熱グリスと接触した状態で、少なくともその一部が前記凹部内に配置された半導体素子と、
前記半導体素子に電気的に接続されるとともに、前記凹部の外周部に配置された配線部材とを備えた半導体装置において、
前記半導体素子に対して、前記放熱板の凹部とは反対側に配置され、前記半導体素子を前記凹部内に向かって付勢する付勢体を備え、
前記付勢体は、前記放熱板における前記凹部の外周部分に取付具により取り付けられたことを特徴とする半導体装置。
A heat sink having a recess on at least one surface;
A heat dissipating grease filled in the recess of the heat dissipating plate;
In a state where it is in contact with the heat dissipation grease, at least a part of the semiconductor element is disposed in the recess, and
In a semiconductor device comprising: a wiring member that is electrically connected to the semiconductor element and disposed on an outer peripheral portion of the recess;
With respect to the semiconductor element, provided on the opposite side of the recess of the heat dissipation plate, comprising a biasing body that biases the semiconductor element into the recess,
The semiconductor device according to claim 1, wherein the biasing body is attached to an outer peripheral portion of the concave portion of the heat radiating plate with a fixture.
前記配線部材は前記付勢体とともに、前記取付具により前記放熱板における前記凹部の外周部分に取り付けられた請求項1に記載の半導体装置。   The semiconductor device according to claim 1, wherein the wiring member is attached to the outer peripheral portion of the concave portion of the heat radiating plate together with the biasing body by the fixture. 前記取付具はネジにより構成され、前記ネジをネジ止めするネジ穴は、前記放熱板における前記凹部の外周部分に形成された請求項2に記載の半導体装置。   The semiconductor device according to claim 2, wherein the fixture is configured by a screw, and a screw hole for screwing the screw is formed in an outer peripheral portion of the recess in the heat radiating plate. 前記ネジ穴は、前記凹部の両側に形成された請求項3に記載の半導体装置。   The semiconductor device according to claim 3, wherein the screw holes are formed on both sides of the recess. 前記凹部及び前記半導体素子は長形形状であり、前記付勢体は、前記凹部の長形形状とは直交する方向に延在する長形形状である請求項1〜4のいずれか一項に記載の半導体装置。   The said recessed part and the said semiconductor element are long shapes, and the said biasing body is a long shape extended in the direction orthogonal to the long shape of the said recessed part. The semiconductor device described. 前記付勢体の前記凹部の長手方向に対応する寸法が、前記凹部の長手方向の寸法よりも小さく、前記凹部の長手方向両端部が前記付勢体から露出している請求項5に記載の半導体装置。   The dimension corresponding to the longitudinal direction of the said recessed part of the said urging | biasing body is smaller than the dimension of the longitudinal direction of the said recessed part, and the longitudinal direction both ends of the said recessed part are exposed from the said urging | biasing body. Semiconductor device. 前記半導体素子と前記配線部材の電気的接続部分が保護樹脂体で被覆され、前記半導体素子は、前記保護樹脂体を介して前記凹部内に向かって付勢された請求項1〜6のいずれか一項に記載の半導体装置。   The electrical connection part of the said semiconductor element and the said wiring member is coat | covered with the protective resin body, The said semiconductor element is urged | biased in the said recessed part via the said protective resin body. The semiconductor device according to one item. 前記保護樹脂体は、前記半導体素子の前記凹部とは反対側を被覆し、前記保護樹脂体の外周形状が前記凹部の内周形状よりも小さい請求項7に記載の半導体装置。   The semiconductor device according to claim 7, wherein the protective resin body covers a side opposite to the concave portion of the semiconductor element, and an outer peripheral shape of the protective resin body is smaller than an inner peripheral shape of the concave portion. 前記付勢体及び前記取付具は熱伝導性材料により形成された請求項1〜8のいずれか一項に記載の半導体装置。   The semiconductor device according to claim 1, wherein the urging body and the fixture are formed of a heat conductive material. 前記付勢体、前記取付具、及び前記放熱板は金属により構成された請求項1〜9のいずれか一項に記載の半導体装置。   The semiconductor device according to claim 1, wherein the urging body, the fixture, and the heat sink are made of metal. 少なくとも一表面に凹部を有する放熱板と、前記放熱板の前記凹部内に充填された放熱グリスと、前記放熱グリスと接触した状態で、少なくともその一部が前記凹部内に配置された半導体素子と、前記半導体素子に電気的に接続されるとともに、前記凹部の外周部に配置された配線部材とを備えた半導体装置の製造方法において、
前記配線部材に搭載された前記半導体素子を、前記放熱グリスと接触するように前記放熱板の前記凹部内に配置し、
前記半導体素子に対して、前記放熱板の凹部とは反対側に付勢体を配置し、
前記付勢体を、前記放熱板における前記凹部の外周部分に前記取付具により取り付けることにより、前記半導体素子を前記凹部内に向かって付勢することを特徴とする半導体装置の製造方法。
A heat radiating plate having a recess on at least one surface thereof, a heat radiating grease filled in the recess of the heat radiating plate, and a semiconductor element at least partially disposed in the recess in a state of being in contact with the heat radiating grease; In the method of manufacturing a semiconductor device, which is electrically connected to the semiconductor element and includes a wiring member disposed on an outer peripheral portion of the recess.
The semiconductor element mounted on the wiring member is disposed in the recess of the heat radiating plate so as to come into contact with the heat radiating grease,
With respect to the semiconductor element, an urging body is disposed on the side opposite to the concave portion of the heat sink,
A manufacturing method of a semiconductor device, wherein the biasing body is attached to an outer peripheral portion of the concave portion of the heat radiating plate by the fixture, thereby biasing the semiconductor element toward the concave portion.
前記取付具としてネジを用い、前記ネジを、前記放熱板における前記凹部の外周部分に形成したネジ穴にネジ止めする請求項11に記載の半導体装置の製造方法。   The method of manufacturing a semiconductor device according to claim 11, wherein a screw is used as the fixture, and the screw is screwed into a screw hole formed in an outer peripheral portion of the recess in the heat sink. 前記配線部材を前記付勢体とともに、前記取付具により前記放熱板における前記凹部の外周部分に取り付ける請求項11に記載の半導体装置の製造方法。   The method of manufacturing a semiconductor device according to claim 11, wherein the wiring member is attached to the outer peripheral portion of the concave portion of the heat radiating plate together with the urging member by the fixture. 請求項1〜10のいずれか一項に記載の半導体装置を複数個備え、前記複数個の半導体装置が平面状に配置された電子機器。   An electronic apparatus comprising a plurality of the semiconductor devices according to claim 1, wherein the plurality of semiconductor devices are arranged in a planar shape.
JP2008278637A 2008-10-29 2008-10-29 Semiconductor device, method of manufacturing the same, and electronic apparatus using semiconductor device Withdrawn JP2010109091A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008278637A JP2010109091A (en) 2008-10-29 2008-10-29 Semiconductor device, method of manufacturing the same, and electronic apparatus using semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008278637A JP2010109091A (en) 2008-10-29 2008-10-29 Semiconductor device, method of manufacturing the same, and electronic apparatus using semiconductor device

Publications (1)

Publication Number Publication Date
JP2010109091A true JP2010109091A (en) 2010-05-13

Family

ID=42298257

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008278637A Withdrawn JP2010109091A (en) 2008-10-29 2008-10-29 Semiconductor device, method of manufacturing the same, and electronic apparatus using semiconductor device

Country Status (1)

Country Link
JP (1) JP2010109091A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019212863A (en) * 2018-06-08 2019-12-12 株式会社ミツトヨ Light absorbing device and laser device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019212863A (en) * 2018-06-08 2019-12-12 株式会社ミツトヨ Light absorbing device and laser device
JP7132756B2 (en) 2018-06-08 2022-09-07 株式会社ミツトヨ Light absorption device and laser device

Similar Documents

Publication Publication Date Title
JP2008004745A (en) Electronic apparatus
JP2008227023A (en) Mounting structure and fastening tool of electronic component having heat sink
JP2010141279A (en) Structure and method for radiating heat of element
JP2009212390A (en) Attachment structure of heating element mounted component
JP5738679B2 (en) Heat dissipation structure
JP5589620B2 (en) Electronic component cooling structure, electronic component device, heat sink
JP2014239105A (en) Mounting structure between power supply circuit board and chassis
JP2009081246A (en) Semiconductor mounting substrate, and manufacturing method thereof
JP2005142323A (en) Semiconductor module
JP2009059760A (en) Heat dissipation structure of electronic circuit board
JP2010109091A (en) Semiconductor device, method of manufacturing the same, and electronic apparatus using semiconductor device
JP2006100687A (en) Packaging structure of light-emitting diode
JP2016039157A (en) Heat dissipation structure
JP4849987B2 (en) heatsink
KR101281043B1 (en) Heat sink
JP2016131218A (en) Heat radiation device
JP2008103577A (en) Heat dissipating structure for power module, and motor controller equipped with the same
JP2008124099A (en) Circuit board with radiator
JP5348121B2 (en) Electronic equipment
JP2009238923A (en) Electronic equipment
JP2000252657A (en) Heat dissipation unit for control apparatus
JP2009188192A (en) Circuit device
JP2010087031A (en) Electronic apparatus
JP2006319008A (en) Heat sink
CN109644578B (en) Arrangement structure of electronic device and electronic circuit device

Legal Events

Date Code Title Description
A300 Withdrawal of application because of no request for examination

Free format text: JAPANESE INTERMEDIATE CODE: A300

Effective date: 20120110