JP2010093847A - Method for manufacturing crystal oscillating piece - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a reverse mesa type crystal oscillating piece having an excellent mass productivity and high occupying ratio of an oscillating part. <P>SOLUTION: The method for manufacturing the crystal oscillating piece 10 uses a wafer 30 including edges parallel with each of a Z" axis obtained by rotating a Z' axis within a range of +60° from -120° around a Y' axis while using a rotation in the +X-axis direction around the Y' axis of a +Z' axis in an AT-cut crystal plate as a positive angle of rotation and an X' axis vertically crossing with the Z" axis. The method for manufacturing the crystal oscillating piece 10 includes a first etching process wet etching the outer peripheries of a thin forming region 34 configuring an oscillating part 16 and a thick forming region adjacent to the thin forming region and the outer periphery of a thick non-forming region formed at the -Z"-axis side end of at least the thin forming region when carrying out a working from a main surface on the +Y'-axis side; and a second etching process penetrating the outer periphery of the thick forming region and the outer periphery of the thick non-forming region in the Y'-axis direction by a wet etching in this case. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a crystal vibrating piece, and in particular, when manufacturing an inverted mesa type crystal vibrating piece or the like, a method for manufacturing a crystal vibrating piece suitable for taking a large occupation ratio of a thin portion effective for excitation. About.

  In recent years, there has been a demand for further downsizing of the inverted mesa type crystal vibrating piece capable of realizing both high frequency and ensuring the mechanical strength of the crystal vibrating piece. In such a crystal vibrating piece that is being reduced in size and thickness, there are two major problems: a problem caused by the crystal vibrating piece itself, and a problem that occurs between other components when configuring the quartz crystal device. There are many cases. Among such problems, the following matters can be cited as problems caused by the quartz crystal resonator element itself.

  For example, there is a problem related to securing a thin portion as a vibrating portion. Specifically, in order to form the shape of a quartz crystal resonator piece that is becoming smaller in size, a mass etching method using wet etching is often employed. However, the processing of quartz by wet etching is affected by the crystal orientation of the quartz. When an inverted mesa type crystal vibrating piece is manufactured, the etching rate varies depending on the crystal surface appearing on the etched surface, and an inclined surface (crystal surface) called a residue appears around the thin portion as the vibrating portion.

  When the size of the quartz base plate constituting the quartz vibrating piece is reduced, the ratio of the residue from the thick part to the thin part is increased, and the effective area of the thin part to be secured is reduced. When the effective area of the thin portion that is the vibrating portion is reduced, the size of the excitation electrode must be reduced. And when the dimension of the excitation electrode is extremely small, it becomes impossible to take out a stable signal from the crystal, energy confinement becomes insufficient, the graph showing the frequency temperature characteristics, the influence of stress etc. from the support part, Dips may appear.

  In order to solve such a problem, Patent Document 1 and Patent Document 2 disclose a technique related to increasing the proportion of the thin portion in the inverted mesa type crystal vibrating piece.

The inverted mesa type crystal vibrating piece disclosed in Patent Document 1 is obtained by dicing a part of an unnecessary thick portion after manufacturing an inverted mesa type quartz vibrating piece.
Further, the inverted mesa type crystal vibrating piece disclosed in Patent Document 2 is such that the thin portion is formed by polishing and is singulated by dicing.

  Moreover, the following matters can be mentioned as a problem which arises between other structural members in manufacturing a quartz crystal device. For example, there is a problem relating to stress and frequency characteristics generated when a quartz crystal resonator element is mounted on a package or a substrate. Specifically, when a crystal resonator element is mounted on a package or board via a conductive adhesive or bump, the stress received by the package or board, or the stress caused by the difference in the linear expansion coefficient between the crystal and the board or package, Acts on the vibrator element. In such a case, the quartz crystal resonator element causes a shift in frequency characteristics.

  Such problems become more significant as the crystal resonator element becomes smaller and thinner, and research on the relationship between the change in frequency characteristics and stress (stress sensitivity) has been advanced. As a result of such research, Non-Patent Document 1 describes the stress sensitivity related to the AT-cut quartz base plate. According to Non-Patent Document 1, in the AT-cut quartz base plate, the X axis, which is the crystal axis, is rotated by 60 ° or 120 ° around the Y ′ axis from the −X axis toward the −Z ′ axis. It is described that the stress sensitivity becomes dull.

JP 2002-33640 A JP 2001-144578 A

J. et al. M.M. Ratajski, “The Force Sensitivity of AT-Cut Quartz Crystals”, 20th Annual Symposium on Frequency Control, (1966)

  In the inverted mesa type crystal vibrating piece disclosed in the above-mentioned patent document, the occupancy ratio of the thin portion is improved. However, both require mechanical processing to manufacture the quartz crystal vibrating piece, so that the mass productivity is lower than that of the quartz crystal vibrating piece manufactured by the wet etching only method.

  Accordingly, an object of the present invention is to provide a manufacturing method of an inverted mesa type quartz vibrating piece that is excellent in mass productivity and has a high occupation ratio of a vibrating part.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.

  In the manufacturing method of the first embodiment, rotating the + Z ′ axis in the AT cut quartz plate around the Y ′ axis in the + X axis direction is a positive rotation angle, and the Z ′ axis is about −120 ° around the Y ′ axis. A method of manufacturing a quartz crystal resonator element using a wafer having edges parallel to the Z ″ axis obtained by rotating in a range of + 60 ° and the X ′ axis perpendicular to the Z ″ axis, and the + Y ′ axis side main surface When processing is performed from the above, the thin part forming region constituting the vibration part, the outer peripheral part of the thick part forming region adjacent to the thin part forming region, and at least the −Z ″ -axis side end of the thin part forming region When the outer peripheral part of the thick part non-formation region provided in the part is processed from the −Y′-axis side, the thin part formation region constituting the vibration part and the thick part formation adjacent to the thin part formation region are formed. + Z ″ axis side end of the outer peripheral portion of the region and at least the thin portion forming region A first etching step of performing wet etching on the outer peripheral portion of the thick portion non-forming region provided in the portion, and performing wet etching on the outer peripheral portion of the thick portion forming region and the outer peripheral portion of the thick portion non-forming region. And a second etching step for penetrating in the axial direction.

  In the manufacturing method of the second embodiment, the rotation of the + Z ′ axis in the AT cut quartz plate around the Y ′ axis in the + X axis direction is a positive rotation angle, and the Z ′ axis is rotated from −120 ° around the Y ′ axis. A method of manufacturing a crystal resonator element using a wafer having an edge parallel to each of a Z ″ axis obtained by rotating within a range of + 60 ° and an X ′ axis perpendicular to the Z ″ axis, and processing from the + Y ′ axis side In this case, the outer peripheral portion of the thin portion forming region constituting the vibrating portion and at least the thick portion non-forming region provided at the end of the thin portion forming region on the −Z ″ axis side is from the −Y′-axis side. In the case of processing, the first etching that performs wet etching on the outer peripheral portion of the thin portion forming region that forms the vibration portion and at least the thick portion non-forming region provided at the + Z ″ axis side end portion of the thin portion forming region. Process and formation of a thick part adjacent to the vibration part forming region A quartz crystal resonator element comprising: a second etching step of wet etching the outer peripheral portion of the region and the outer peripheral portion of the thick portion non-formation region from both main surfaces of the wafer in the Y′-axis direction. Manufacturing method.

Application Example 1 A quartz crystal resonator element in which a thin portion constituting a vibrating portion and a thick portion adjacent to the vibrating portion are formed by wet etching with respect to a quartz base plate, and the quartz base plate is an AT-cut quartz element Z ″ obtained by rotating the Z ′ axis around the Y ′ axis in the range of −120 ° to + 60 ° with the + Z ′ axis rotating around the Y ′ axis in the + X axis direction as a positive rotation angle. The thin portion is formed from either the + Y′-axis-side main surface or the −Y′-axis-side main surface, and has an edge parallel to each of the axis and the X′-axis perpendicular to the axis. When etching is performed from the axial main surface, a thick portion is provided at least at the + Z ″ axial side end, and when etching is performed from the −Y ′ axial main surface, at least at the −Z ″ axial side end. A quartz crystal vibrating piece characterized by providing a thick part.
According to the quartz crystal resonator element configured as described above, it is excellent in mass productivity, and the occupation ratio of the vibrating portion, that is, the thin portion with respect to the quartz base plate can be increased.

[Application Example 2] The quartz crystal resonator element according to Application Example 1, wherein in the thin portion, a thick portion non-formation region is provided at an end portion other than the end portion where the thick portion is provided. Crystal vibrating piece.
By preventing the thick part from being formed at the end other than the end provided with the thick part, an increase in the occupation ratio of the thin part can be ensured. Further, like the quartz crystal resonator element described in Application Example 1, the mass productivity is excellent.

Application Example 3 In the quartz crystal resonator element according to Application Example 1, when the range of the rotation angle of the Z ′ axis is −60 ° to −25 ° and etching is performed from the main surface on the + Y ′ axis side. Is provided with a thick portion at the + Z ″ axis end and the + X ′ axis end, and is provided with a thick portion non-forming region at the −Z ″ axis end and the −X ′ axis end, When etching is performed from the axial main surface, thick portions are provided at the −Z ″ axial end and the −X ′ axial end, and at the + Z ″ axial end and the + X ′ axial end. A quartz crystal resonator element having a thick portion non-formation region.
According to the quartz crystal vibrating piece having such characteristics, it is excellent in mass productivity, can increase the occupation ratio of the vibrating portion to the quartz base plate, and can secure the mechanical strength of the quartz crystal vibrating piece.

Application Example 4 In the crystal resonator element according to Application Example 1, when the range of the rotation angle of the Z ′ axis is −35 ° to 0 ° and etching is performed from the main surface on the + Y ′ axis side. A thick portion is provided at the + Z ″ axis side end portion and the −X ′ axis side end portion, and a thick portion non-forming region is provided at the −Z ″ axis side end portion and the + X ′ axis side end portion. When etching is performed from the side main surface, thick portions are provided at the −Z ″ axis side end portion and the + X ′ axis side end portion, and the + Z ″ axis side end portion and the −X ′ axis side end portion are thick. A quartz crystal resonator element having a non-part forming region.
Similarly to Application Example 3, the crystal vibrating piece having such a feature is also excellent in mass productivity, can increase the occupation ratio of the vibration part to the crystal base plate, and can secure the mechanical strength of the crystal vibrating piece. It can be a vibrating piece.

Application Example 5 In the quartz crystal resonator element according to Application Example 1, when the rotation angle of the Z ′ axis is −30 ° ± 5 ° and etching is performed from the main surface on the + Y ′ axis side, + Z ″ Etching from the main surface of the -Y'-axis side, with thick-walled portions at the shaft-side end and ± X'-axis-side end, and a thick-film non-forming region at the -Z "shaft-side end The quartz crystal resonator element is characterized in that a thick portion is provided at an end portion on the −Z ″ axis side and an end portion on the ± X ′ axis side and a thick portion non-forming region is provided at an end portion on the + Z ″ axis side.
The crystal resonator element having such a feature is also excellent in mass productivity, increases the occupation ratio of the vibration part with respect to the crystal base plate, and secures the mechanical strength of the crystal resonator element, as in application examples 3 and 4. It can be a crystal vibrating piece that can be.

[Application Example 6] The quartz crystal resonator element according to Application Example 1 or Application Example 2, wherein the rotation angle of the Z ′ axis is −30 ° ± 5 °, and a part of the outer periphery of the ± X ′ axis side edge A quartz crystal vibrating piece characterized by providing a thick part.
The quartz crystal vibrating piece having such characteristics is also excellent in mass productivity, increasing the occupation ratio of the vibrating portion to the quartz base plate, and ensuring the mechanical strength of the quartz crystal vibrating piece as in the above application examples 3 to 5. It can be a crystal vibrating piece that can be.

Application Example 7 The quartz crystal resonator element according to any one of Application Examples 1 to 6, wherein the rotation angle of the Z ′ axis is −30 ° ± 5 ° and is disposed on the crystal base plate. A crystal resonator element, wherein connection electrodes constituting an electrode pattern are arranged on a straight line parallel to the Z ″ axis.
According to the quartz crystal resonator element having such a feature, it is difficult to be influenced by external stress in the mounting form.

[Application Example 8] The crystal resonator element according to any one of Application Examples 1 to 7, wherein a plurality of excitation electrodes are formed on one main surface of the vibration unit. .
When the crystal resonator element having such a feature is used as a device, a double mode filter can be formed.

Application Example 9 A crystal device in which the crystal resonator element according to any one of Application Examples 1 to 8 is mounted in a package.
With such a configuration, a crystal resonator or a crystal filter can be provided.

Application Example 10 A crystal oscillator comprising the crystal resonator element according to any one of Application Examples 1 to 7, and an oscillation circuit.
With such a configuration, a crystal oscillator can be provided.

Application Example 11 In the AT cut quartz plate, rotating the + Z ′ axis around the Y ′ axis in the + X axis direction is a positive rotation angle, and the Z ′ axis is around −120 ° to + 60 ° around the Y ′ axis. A quartz crystal resonator element using a wafer having an edge parallel to each of a Z ″ axis obtained by rotating the X ″ axis and an X ′ axis perpendicular to the Z ″ axis. Processing is performed from the main surface on the + Y ′ axis side. In this case, the thin portion forming region constituting the vibrating portion, the outer peripheral portion of the thick portion forming region adjacent to the thin portion forming region, and at least the -Z ″ axis side end portion of the thin portion forming region. When processing the outer peripheral portion of the thick portion non-forming region from the −Y′-axis side, the thin portion forming region constituting the vibrating portion, and the outer peripheral portion of the thick portion forming region adjacent to the thin portion forming region , And at least at the + Z ″ -axis side end portion of the thin portion forming region A first etching step in which the outer peripheral portion of the thick portion non-forming region is wet-etched; and the outer peripheral portion of the thick portion forming region and the outer peripheral portion of the thick portion non-forming region are wet-etched in the Y′-axis direction. And a second etching step for penetrating the crystal vibrating piece.
According to the method for manufacturing a quartz crystal vibrating piece having such a feature, it is possible to form the external shape of the quartz crystal vibrating piece described in any of the above application examples by only two etching steps. Therefore, since shape formation by batch processing by wet etching is possible, it can be proud of excellent mass productivity.

Application Example 12 In an AT-cut quartz plate, rotating the + Z ′ axis around the Y ′ axis in the + X axis direction is a positive rotation angle, and the Z ′ axis is around −120 ° to + 60 ° around the Y ′ axis. Is a method for manufacturing a quartz crystal vibrating piece using a wafer having edges parallel to the Z ″ axis obtained by rotating the X ″ axis and the X ′ axis perpendicular to the Z ″ axis, and processing is performed from the + Y ′ axis side. When processing the outer peripheral portion of the thin portion forming region constituting the vibrating portion and at least the thick portion non-forming region provided at the −Z ″ axis end of the thin portion forming region from the −Y′-axis side The first etching step of wet etching the thin portion forming region constituting the vibration portion and the outer peripheral portion of the thick portion non-forming region provided at least on the + Z ″ axis side end portion of the thin portion forming region, Perimeter of thick part formation area adjacent to vibration part formation area And a second etching step in which the outer peripheral portion of the thick portion non-formation region is wet-etched from both principal surfaces of the wafer and penetrates in the Y′-axis direction. .
Even with the method for manufacturing a quartz crystal vibrating piece having such characteristics, it is possible to form the external shape of the quartz crystal vibrating piece described in any of the above application examples by only two etching steps. Therefore, since shape formation by batch processing by wet etching is possible, it can be proud of excellent mass productivity. Further, the side surface shape of the quartz crystal vibrating piece can be adjusted by performing the second etching process, which is a penetration process, from both main surfaces of the wafer.

It is a figure which shows the structure of the crystal vibrating piece which concerns on 1st Embodiment. It is a figure which shows the structure of a quartz base plate. It is a figure which shows the 2nd electrode pattern employ | adopted as the quartz crystal vibrating piece which concerns on 1st Embodiment. It is a figure which shows the 3rd electrode pattern employ | adopted as the quartz crystal vibrating piece which concerns on 1st Embodiment. It is a figure which shows the 4th electrode pattern employ | adopted as the quartz crystal vibrating piece which concerns on 1st Embodiment. It is a figure which shows the 5th electrode pattern employ | adopted as the quartz crystal vibrating piece which concerns on 1st Embodiment. It is a figure which shows the 6th electrode pattern employ | adopted as the quartz crystal vibrating piece which concerns on 1st Embodiment. It is a figure which shows the 7th electrode pattern employ | adopted as the quartz crystal vibrating piece which concerns on 1st Embodiment. It is a figure which shows the 8th electrode pattern employ | adopted as the quartz crystal vibrating piece which concerns on 1st Embodiment. It is a figure which shows the 9th electrode pattern employ | adopted as the quartz crystal vibrating piece which concerns on 1st Embodiment. It is a figure which shows the 10th electrode pattern employ | adopted as the crystal vibrating piece which concerns on 1st Embodiment. It is a figure which shows the 11th electrode pattern employ | adopted as the quartz crystal vibrating piece which concerns on 1st Embodiment. It is a figure which shows the 12th electrode pattern employ | adopted as the quartz crystal vibrating piece which concerns on 1st Embodiment. It is a figure which shows the 13th electrode pattern employ | adopted as the quartz crystal vibrating piece which concerns on 1st Embodiment. It is a figure which shows the other electrode pattern which can be employ | adopted for the crystal vibrating piece which concerns on 1st Embodiment. It is a figure which shows the process which concerns on 1st Embodiment of the manufacturing method of a crystal vibrating piece. It is a figure which shows the cross-sectional shape of the piece formation area at the time of completion | finish of the 1st etching in 1st Embodiment of the manufacturing method of a crystal vibrating piece. It is a figure which shows the cross-sectional shape of the piece formation area at the time of completion | finish of the 2nd etching in 1st Embodiment of the manufacturing method of a crystal vibrating piece. It is a figure which shows the process which concerns on 2nd Embodiment of the manufacturing method of a crystal vibrating piece. It is a figure which shows the cross-sectional shape of the piece formation area at the time of completion | finish of the 1st etching in 2nd Embodiment of the manufacturing method of a crystal vibrating piece. It is a figure which shows the cross-sectional shape of the piece formation area at the time of completion | finish of the 2nd etching in 2nd Embodiment of the manufacturing method of a crystal vibrating piece. It is a figure which shows the application form of the crystal vibrating piece which concerns on 1st Embodiment. It is a figure which shows the structure of the crystal vibrating piece which concerns on 2nd Embodiment. It is a figure which shows the 2nd electrode pattern employ | adopted as the quartz crystal vibrating piece which concerns on 2nd Embodiment. It is a figure which shows the application form of the crystal vibrating piece which concerns on 2nd Embodiment. It is a figure which shows the structure of the quartz crystal vibrating piece which concerns on 3rd Embodiment. It is a figure which shows the example of the electrode pattern which can be employ | adopted as the crystal vibrating piece which concerns on 3rd Embodiment. It is a figure which shows the application form of the crystal vibrating piece which concerns on 3rd Embodiment. It is a figure which shows the structure of the crystal vibrating piece which concerns on 4th Embodiment. It is a figure which shows the application form of the crystal vibrating piece which concerns on 4th Embodiment. It is a figure which shows the structure of the crystal oscillator contained in the crystal device which concerns on invention. It is a figure which shows the other structure of the crystal oscillator included by invention. It is a figure which shows the package structure of the crystal oscillator for mounting the crystal vibrating piece which has arrange | positioned the connection electrode along the Z "axis | shaft. It is a figure which shows the structure of the crystal vibrating piece employ | adopted when comprising a dual mode filter as a crystal device. It is a figure which shows the structure of the crystal oscillator which concerns on 1st Embodiment among the crystal oscillators contained in the crystal device which concerns on invention. It is a figure which shows the structure of the crystal oscillator which concerns on 2nd Embodiment among the crystal oscillators contained in the crystal device which concerns on invention. It is a figure which shows the other structure of the crystal oscillator included by invention.

Hereinafter, an embodiment according to a method for manufacturing a quartz crystal resonator element of the present invention will be described in detail with reference to the drawings.
First, with reference to FIGS. 1-21, 1st Embodiment which concerns on the quartz crystal vibrating piece manufactured by the manufacturing method of this invention is described. In FIG. 2, FIG. 2A is a schematic diagram showing a planar configuration of the crystal blank according to the embodiment, and FIG. 2B is a schematic diagram showing a cross-sectional configuration of the crystal blank.

  The crystal vibrating piece 10 includes a crystal base plate 12 and an electrode pattern formed on the surface of the crystal base plate 12. In the quartz crystal vibrating piece 10 according to the embodiment, a so-called in-plane rotated crystal element plate cut at a cut angle called AT cut is used as the crystal element plate 12. The AT cut is a principal surface obtained by rotating the plane (Y plane) including the X axis and the Z axis, which are crystal axes of quartz, from the X axis as the base point and rotating the + Z axis in the -Y axis direction by about 35 degrees 15 minutes. This is a quartz base plate cut out so as to have (a main surface including the X axis and the Z ′ axis). The quartz base plate used in the present embodiment is positive in that the main surface including the X axis and the Z ′ axis further rotates the + Z ′ axis in the + X axis direction with the Y ′ axis as a base point. When the rotation angle is taken, it has edges (parallel) along the X ′ axis and the Z ″ axis obtained by rotating the X axis and the Z ′ axis by about −30 ° ± 5 °, respectively. The right crystal is generally used as a raw material of the device, but even when the left crystal is used, there is no problem in implementing the present invention. For example, when the crystal axis is shown with reference to a plane having, for example, a Z-axis and an X-axis, the crystal axis is in a mirror image relationship, where the left crystal and the right crystal Because the physical constants are the same, if the rotation angle and the cut angle according to the crystal axis are correct, In forming the plate, by directly applying the above description and the following description, it is possible to form a desired quartz crystal resonator element.

  In the crystal base plate 12 having the configuration shown in FIG. 2, the longitudinal direction of the crystal base plate 12 can be determined as the Z ″ axis, the short side direction as the X ′ axis, and the thickness direction as the Y ′ axis. The crystal base plate 12 has a thin vibrating portion 16 and a thick portion 14 serving as a fixing portion adjacent to the vibrating portion 16.

  When the quartz base plate 12 is processed by wet etching, there may be a difference in etching rate due to precipitation of crystal planes due to anisotropy of crystal orientation of quartz. In particular, a quartz base plate cut at a cut angle called AT cut often has a problem of the presence of residues (inclined surfaces) appearing on a processed surface by wet etching. The amount of residue on the processed surface varies depending on various cutting angles such as a cut angle and an in-plane rotation angle.

  For example, when a general AT-cut quartz base plate is processed into a reverse mesa shape by wet etching, it is relatively large on the two sides of the thin portion, specifically on the −Z′-axis side step portion and the + X-axis side step portion. A residue will appear. On the other hand, when the quartz base plate 12 cut out at the in-plane rotation angle employed in the present embodiment is processed into a reverse mesa shape by wet etching, a large residue appears only on one side on the −Z ″ axis side. By adopting the quartz base plate 12, the residue generated between the vibrating portion 16 and the thick portion 14 can be reduced, and an effective occupation ratio of the vibrating portion 16 in configuring the crystal vibrating piece 10 can be reduced. Can be improved.

  Further, in the quartz base plate 12 according to the present embodiment, when forming the outer shape, the end portion of the thin portion on the side where the residue appears (the −Z ″ axis side) is the thick portion non-forming region, and the thick portion is wet-etched. In this way, by removing a part of the thick part, it is possible to eliminate the cause of the residue, and in constructing the crystal vibrating piece 10, the vibration part 16 with respect to the entire quartz base plate 12 is removed. The occupation ratio can be improved.

  For this reason, the quartz base plate 12 according to the present embodiment is provided with the thick portion 14 adjacent to the thin vibrating portion 16 in a substantially U shape along the edge other than the −Z ″ axis side. This is because the mechanical strength of the crystal vibrating piece 10 can be maintained even with such a configuration.

  The crystal base plate 12 having such an outer shape is provided with electrode patterns such as excitation electrodes 18 and 24, connection electrodes 22 and 28, and extraction electrodes 20 and 26. Below, the electrode pattern provided in the quartz base plate 12 of this embodiment is demonstrated with reference to drawings.

  First, the first electrode pattern will be described with reference to FIG. In the first electrode pattern, the excitation electrode 18 disposed on the front surface side of the vibration part 16 is a rectangle having a long side in the Z ″ axis direction, and the excitation electrode 24 disposed on the back surface side of the vibration part 16 is X. ′ A rectangular shape having long sides in the axial direction In this way, the rectangular excitation electrodes 18, 24 are made to intersect each other on the front and back surfaces via the vibration portion 16, and a part of the front and back surfaces of the vibration portion 16. If the excitation electrodes 18 and 24 disposed on the front and back sides of the vibration unit 16 are displaced, the overlapping portions of the excitation electrodes 18 and 24 that contribute to excitation are caused. Therefore, the difference in the oscillation characteristics of the mass-produced quartz crystal vibrating piece 10 can be reduced.

The connection electrodes 22 and 28 are provided along the edge of the thick portion 14 provided on the + Z ″ axis side, and are electrically connected to the excitation electrodes 18 and 24 via the extraction electrodes 20 and 26. It is preferable that the electrodes 20 and 26 have a large line width at the portion straddling the stepped portion between the thick portion 14 and the thin vibrating portion 16. With this configuration, the metal film constituting the electrode pattern The disconnection of the extraction electrodes 20 and 26 can be prevented at the step portion between the vibrating portion 16 and the thick portion 14 where the thickness of the extraction electrode 20 tends to be thin. From the excitation electrode 18 arranged up to the step portion along the Z ″ axis direction, it is routed to the −X′-axis side edge across the step portion, and is routed to the connection electrode 22 along the edge. The lead electrode 26 is led from the excitation electrode 24 disposed along the X ′ axis to the + X′-axis side edge to the + Z ″ -axis side edge along the edge and connected to the connection electrode 28. .
Of course, even if the width of the extraction electrode straddling the step portion is narrow, it is still a part of this embodiment.

  Further, the connection electrode 28 is electrically connected to the excitation electrode 24 by drawing the extraction electrode 26 extending from the back surface side to the front surface side through the side surface of the crystal base plate 12. With such a configuration, the two connection electrodes 22 and 28 are disposed on one surface (for example, the surface). For this reason, when mounting the crystal vibrating piece 10 on a substrate or a package, it is not necessary to apply a conductive adhesive. By eliminating the need for overcoating of the conductive adhesive, it is possible to prevent a situation in which the overcoated conductive adhesive touches the metallic package side surface or other electrodes and causes a short circuit. Moreover, as a mounting form of the crystal vibrating piece 10, it is possible to use bumps, and the width of the mounting method can be increased.

  Next, the second electrode pattern will be described with reference to FIG. The second electrode pattern has a form in which the pattern disposed on the front and back surfaces of the quartz base plate 12 is reversed with respect to the first electrode pattern described above. Therefore, portions having the same function are denoted by the same reference numerals, and detailed description thereof is omitted.

  Next, the third electrode pattern will be described with reference to FIG. In the third electrode pattern, the excitation electrodes 18 and 24 arranged on the front and back surfaces of the vibration part 16 have the same shape and size, and are arranged so that there is no deviation between them. The arrangement positions of the connection electrodes 22 and 28 are the same as those of the first and second electrode patterns, and the extraction electrodes 20 and 26 are configured as follows. That is, the extraction electrode 20 that connects the excitation electrode 18 and the connection electrode 22 on the surface side is routed to the step portion between the thin vibrating portion 16 and the thick portion 14 along the Z ″ axis. By extending to the −X′-axis side so as to straddle, the width of the portion straddling the stepped portion is widened, and is routed to the connection electrode 22 along the edge on the −X′-axis side. The extraction electrode 26 connecting the excitation electrode 24 on the side and the connection electrode 28 disposed on the surface side is routed to the edge on the + X′-axis side and pulled to the edge on the + Z′-axis side along the edge on the + X′-axis side. It is rotated and routed to the connection electrode 28 disposed on the surface side through the side surface of the quartz base plate 12.

  Next, the fourth electrode pattern will be described with reference to FIG. A 4th electrode pattern is a thing of the form which reversed the pattern arrange | positioned on the front and back of the quartz base plate 12 with respect to the 3rd electrode pattern mentioned above. Therefore, portions having the same function are denoted by the same reference numerals, and detailed description thereof is omitted.

  Next, the fifth electrode pattern will be described with reference to FIG. The fifth electrode pattern is different from the third and fourth electrode patterns described above in the manner in which the extraction electrodes 20 and 26 are routed. That is, the extraction electrode 20 on the surface side is routed from the excitation electrode 18 to the edge on the −X ′ axis side, and is routed to the + Z ″ axis side edge along the edge on the −X ′ axis side. On the other hand, the extraction electrode 26 disposed on the back surface side is routed from the excitation electrode 24 to the + X′-axis side edge, and is routed along the + X′-axis side edge to the + Z ″ -axis side edge. That is, the fifth electrode pattern forms an electrode pattern of a target form on the front and back surfaces of the quartz base plate 12.

  Next, the sixth electrode pattern will be described with reference to FIG. The sixth electrode pattern approximates the form of the fifth electrode pattern described above. The difference is that the size of the excitation electrode 18 on the front surface side is made smaller than the size of the excitation electrode 24 on the back surface side. By adopting such a configuration, even if a deviation occurs between the surface excitation electrode 18 and the excitation electrode 24 disposed on the front and back surfaces of the vibration part 16, it contributes to excitation. The area of the vibration part 16 is the same. Therefore, the difference in the oscillation characteristics of the mass-produced quartz crystal resonator element 10 can be reduced.

  Next, the seventh electrode pattern will be described with reference to FIG. The seventh electrode pattern approximates the first electrode pattern described above. The difference is that the connection electrodes 22 and 28 disposed in the thick portion 14 are arranged in the direction along the Z ″ axis. For this reason, the excitation electrode 18 and the connection electrode 22 on the surface side, and the lead The electrode 20 is arranged on a straight line along the Z ″ axis. On the other hand, the configuration of the excitation electrode 24 and the extraction electrode 26 on the back surface side is the same as that of the first electrode pattern, and the configuration after being routed to the front surface side through the side surface of the quartz base plate 12 is different. . That is, the connection electrode 28 electrically connected to the excitation electrode 24 on the back surface side is disposed so as to be located on the extension line of the connection electrode 22, the extraction electrode 20, and the excitation electrode 18 on the front surface side, and is routed to the front surface side. The drawn electrode 26 is connected to this. Here, the direction of the Z ″ axis is a direction obtained by rotating the X axis around the Y ′ axis by + 60 ° with the rotation angle that rotates the + X axis in the −Z ′ axis direction as the positive rotation angle with the Y ′ axis as a base point. The direction in which the X axis is rotated + 60 ° around the Y ′ axis (the direction in which the Z ′ axis is rotated −30 ° around the Y ′ axis) is This is because the vibration characteristics of quartz are the least susceptible to the influence of stress due to external forces, that is, the direction in which the stress sensitivity is the slowest, so that the connection electrodes 22 and 28 are disposed along this direction to travel through the support portion. Thus, the influence of the stress applied to the quartz base plate 12 can be suppressed.

  Next, an eighth electrode pattern will be described with reference to FIG. The eighth electrode pattern approximates the seventh electrode pattern described above. The difference is that, among the electrode patterns arranged on the back surface side, the extraction electrodes 26 are arranged symmetrically with respect to a long side direction center line (not shown). By disposing the extraction electrode 26 in this way, it is possible to reduce the risk of disconnection when being routed to the surface side.

  Next, a ninth electrode pattern will be described with reference to FIG. The ninth electrode pattern is also similar to the seventh electrode pattern described above. The difference is that the arrangement direction of the excitation electrodes 18 and 24 on the front and back surfaces of the quartz base plate 12 is reversed (the back-side excitation electrode 24 is arranged along the Z ″ axis, and the front-side excitation electrode 18 is 10) and the back-side extraction electrode 26 are arranged in a distorted manner, and the patterning of the extraction electrode 26 in the form shown in FIG. The part does not increase.

  Next, a tenth electrode pattern will be described with reference to FIG. The tenth electrode pattern is a combination of the above-described third to fifth electrode patterns and the seventh electrode pattern. Specifically, the shapes and positions of the excitation electrodes 18 and 24 disposed on the front and back of the vibration part 16 are made to coincide with each other, and the positions where the connection electrodes 22 and 28 are disposed are on a straight line parallel to the Z ″ axis. Then, by reducing the line width of the extraction electrodes 20 and 26 located in the vicinity of the excitation electrodes 18 and 24, the capacitance change caused by the displacement of the excitation electrodes 18 and 24 on the front and back of the vibration part 16 is reduced. Other configurations relating to the extraction electrodes 20 and 26 are the same as those of the seventh electrode pattern described above.

  Next, the eleventh electrode pattern will be described with reference to FIG. The eleventh electrode pattern is a form in which the extraction electrodes 20 and 26 of the ninth electrode pattern are adopted for the tenth electrode pattern described above.

  Next, a twelfth electrode pattern will be described with reference to FIG. The twelfth electrode pattern approximates the eleventh electrode pattern described above. The difference is that the extraction electrodes 20 and 26 arranged on the front and back sides of the vibrating portion 16 are approximated to the front and back objects, that is, the fifth and sixth electrode patterns described above.

  Next, a thirteenth electrode pattern will be described with reference to FIG. The thirteenth electrode pattern is a form in which the excitation electrodes 18 and 24 of the sixth electrode pattern are adopted in the tenth electrode pattern described above.

  In the above description of the electrode pattern, the excitation electrode is shown as having a rectangular shape in the drawings. For example, the third to sixth and tenth to thirteenth electrode patterns are circular, elliptical, and the like. It may be a shape other than a rectangle, such as a polygon. In the explanatory diagrams of the electrode patterns, the two connection electrodes 22 and 28 are disposed on the thick portion 14 provided on the + Z ″ axis side. As for the arrangement, as shown in FIG. 15, it may be arranged in the direction along the Z ″ axis on the thick portion 14 (± X ′ axis side edge) formed along the Z ″ axis. .

Next, a manufacturing method of the quartz crystal resonator element having the above configuration will be described in detail with reference to the drawings.
First, a first embodiment according to a method for manufacturing a quartz crystal resonator element will be described with reference to FIG. In the present invention, the quartz crystal vibrating piece 10 is manufactured from the wafer 30 by batch processing. First, a mask 32 is formed on the surface of the wafer 30. The mask 32 may be made of a resist or the like. In the case of the present embodiment, a thickened portion, that is, a vibrating portion forming region (thin portion forming region) 34 and an end of the vibrating portion forming region 34 on the −Z ″ axis side. A mask 32 that protects a portion other than the outer peripheral portion of the piece forming region 36, such as the through groove forming region 38 including the outer peripheral portion of the thick portion non-forming region, which is a portion, is formed. In the piece manufacturing method, since the electrode pattern is formed in the state of the wafer 30, the breaker 40 for connecting the crystal vibrating piece 10 to the wafer 30 also forms the mask 32 as a protection portion (see FIG. Note that the etching method itself is not particularly limited, for example, the surface of the wafer 30 may be surrounded by a frame, and the etching solution may be poured into the frame. If the back and side of the wafer 30 covered by the resist or the like may be immersed in an etching solution.

  Next, the portions other than the mask forming portion, that is, the vibration portion forming region 34 and the through groove forming region 38 are wet-etched to form a plurality of recessed portions on the surface of the wafer 30 (first etching). Here, the first etching in this embodiment is performed from the + Y′-axis side main surface (see FIG. 16B). The cross section of the piece forming region 36 constituting the quartz base plate 12 etched under such conditions has a shape as shown in FIG. 17 due to the anisotropy of the crystal structure. In FIG. 17, FIG. 17A is a plan view of an individual piece formation region, FIG. 17B is a cross-sectional view taken along line AA in FIG. 17A, and FIG. 17C is B in FIG. It is a figure which shows -B cross section. As can be seen by comparing FIG. 17B and FIG. 17A, in the manufacturing method of this embodiment, the residue (oblique portion) 42 that appears on the −Z ″ axis side is from the tip of the thick portion 14. Is also located on the −Z ″ axis side (tip side).

  Next, the mask is once peeled off, and a mask 44 is formed on the back side of the wafer. The mask only needs to have only the through-groove formation region 38 that is a combination of the outer periphery of the thick portion formation region and the outer periphery of the thick portion non-formation region. The wafer 30 on which the new mask 44 (32) is formed is etched to form the through groove 38a (second etching). The cross section when the through groove 38a is formed by wet etching has a shape as shown in FIG. 18A is a plan view of the piece forming region 36, FIG. 18B is a cross-sectional view taken along line AA in FIG. 18A, and FIG. 18C is in FIG. It is a figure which shows a BB cross section. As can also be seen from FIG. 18B, by performing the etching related to the formation process of the through groove 38a from the back surface side, the overhang of the thick portion 14 side end portion (+ Z ″ axis side end portion) can be suppressed. In addition, it is desirable to form a mask 32 on the surface side because the etchant may flow into the surface of the vibrating portion 16 when the through groove 38a is formed and the etching may proceed (FIG. 16C). reference).

  After forming the external shape of the quartz base plate 12 as described above, an electrode pattern is formed. The electrode pattern may be formed by an existing method, for example, vapor deposition using a mask jig, or a method of forming a metal film by vapor deposition or sputtering and then forming a mask by photolithography and etching unnecessary portions. The through electrode 38 (see FIG. 1 and the like) disposed on the back surface and the lead electrode 26 or the connection electrode 28 (see FIG. 1 and the like) disposed on the front surface form a through groove 38a. It is formed via the side surface of the quartz base plate 12.

  The crystal vibrating piece 10 is completed by separating the crystal vibrating piece 10 from the wafer 30 on which the electrode pattern has been formed. The singulation is performed by folding the crystal vibrating piece 10 from the folding portion 40 (see FIG. 16D).

  Next, a second embodiment relating to a method for manufacturing a quartz crystal resonator element will be described with reference to FIG. The difference between this embodiment and the method for manufacturing the quartz crystal resonator element according to the first embodiment described above is that the range etched by the first etching and the range etched by the second etching are changed. .

  Specifically, when performing the first etching, a region (thinned portion forming region) constituting the vibrating portion 16 and an etching residue 42 are taken into consideration on the −Z ″ axis side region (outer periphery of the thick portion non-formed region). Part) is formed to form a thin part constituting the vibrating part 16. The first etching is performed only from the surface side (see FIG. (See FIGS. 19A and 19B).

  Next, the mask 32 is once peeled off and a second etching process is started. In the second etching step, a region other than the through groove forming region, that is, the outer peripheral portion of the thick portion forming region and the outer peripheral portion of the thick portion non-forming region, that is, the individual piece forming region 36 constituting the crystal base plate 12. , And a mask 32 that covers the break-off portion 40 is formed. In the second embodiment, masks 32 and 44 (see FIG. 21) are formed on both the front and back surfaces of the wafer 30. The mask 44 formed on the back surface side is also formed so as to cover the region other than the through-groove forming region, like the mask 32 formed on the front surface side.

  The wafer 30 on which the masks 32 and 44 are formed as described above is wet-etched from both the front and back surfaces. By performing etching for forming the through-grooves 38a simultaneously from the front and back surfaces of the wafer 30, the end shape of the crystal base plate 12 is finished finely (see FIG. 19C).

  An electrode pattern is formed on the wafer 30 on which the outer shape of the quartz base plate 12 is formed as described above. The crystal vibrating piece 10 is separated from the wafer 30 on which the electrode pattern is formed, and the crystal vibrating piece 10 is completed.

  In the case of the quartz crystal resonator element 10 configured as described above, by adjusting the in-plane rotation angle, the portion where the residue 42 due to wet etching appears largely can be adjusted only to the −Z ″ axis side. By etching the thick portion on the −Z ″ axis side in which the residue 42 appears in a large amount, the proportion of the vibrating portion 16 formed on the quartz base plate 12 can be increased. In addition, since the proportion of the vibrating portion 16 can be increased, the excitation electrodes 18 and 24 having a size larger than the size of the crystal vibrating piece 10 can be formed. As a result, an energy confinement effect is generated, and it is possible to prevent a dip from occurring in the graph showing the temperature characteristics.

  When the main surface subjected to wet etching for forming the thin vibrating portion 16 is reversed (when it is on the −Y ′ axis side), ± on the Z ″ axis and ± on the X ′ axis are reversed. It will be.

  Next, with reference to FIG. 22, an application form of the quartz crystal resonator element according to the above embodiment will be described. The quartz crystal resonator element 10 according to this application mode has the same configuration as that of the quartz crystal oscillator piece 10 according to the first embodiment described above. The difference is in the form of a thick portion 14 that surrounds the thin vibrating portion 16 in a substantially U shape along the edge other than the −Z ″ axis side.

In the first embodiment, the thick portion 14 that is up to the free end side (−Z ″ axis tip portion) is extended to the middle of the vibration portion 16 in the present embodiment, and the tip side of the thick portion 14 (−Z ″ axis). A thin portion formed integrally with the vibrating portion 16.
When the mechanical strength of the crystal vibrating piece 10 has a margin, even the crystal vibrating piece 10 having such a configuration can be regarded as a part of the present embodiment.

  Next, with reference to FIG. 23, a second embodiment relating to a quartz crystal vibrating piece manufactured by the manufacturing method of the present invention will be described. In the quartz crystal resonator element according to this embodiment, the surface where the thin portion is formed is on the + Y′-axis side, and the in-plane rotation angle (Z′-axis rotation angle with respect to the Y′-axis) ψ is 0 ° ≧ ψ ≧ −35 °. It should be noted that the configuration itself of the quartz crystal resonator element according to this embodiment is similar to that of the quartz crystal resonator element according to the first embodiment. In the drawings, a reference numeral added with “a” is attached to the drawings, and detailed description thereof is omitted.

  As described above, in the AT-cut quartz base plate, a difference appears in the residue appearing at the step portion generated between the thin vibrating portion and the thick portion by changing the in-plane rotation angle. When the rotation angle is in the above range, the residue is likely to appear on the + X′-axis side and the −Z ″ -axis side of the vibration part. For this reason, in the crystal vibrating piece 10a according to this embodiment, the + X′-axis side and the −Z′-side. “The thick portion constituting the edge located on the axial side (the portion that was the thick portion in the case of the quartz crystal resonator piece according to the conventional form) is the etching range, and the occupation range ratio of the thin portion constituting the vibrating portion 16a It has expanded.

  Next, the configuration of the electrode pattern of the crystal resonator element according to this embodiment will be described. First, the first electrode pattern will be described. In the first electrode pattern, the excitation electrode 18a disposed on the front surface side of the vibrating portion 16a is disposed along the Z ″ axis, and the excitation electrode 24a disposed on the back surface side is disposed so as to intersect with this. The connection electrodes 22a and 28a are disposed at the + Z ″ axis side end, and the excitation electrodes 18a and 24a are connected to the connection electrodes 22a and 28a by the extraction electrodes 20a and 26a. The extraction electrode 20a connected to the excitation electrode 18a disposed on the surface side is routed to the thick portion 14a along the Z ″ axis, and is routed to the + X′-axis side edge across the stepped portion. With such a configuration, the width of the electrode film straddling the stepped portion is increased, and disconnection at the stepped portion is less likely to occur, and the extraction electrode 20a routed to the + X′-axis side edge extends along the edge. Is routed to the connection electrode 22a.

  On the other hand, the extraction electrode 26a connected to the excitation electrode 24a disposed on the back surface side is routed to the −X′-axis side edge, and is then routed to the back surface side of the connection electrode 28a along the edge. . The extraction electrode 26a drawn to the back surface side of the connection electrode 28a is drawn to the connection electrode 28a provided on the front surface side through the side surface of the crystal base plate 12a.

  Next, the second electrode pattern will be described with reference to FIG. The second electrode pattern is a form in which the arrangement of the electrode patterns on the front and back surfaces of the quartz base plate 12a is reversed with respect to the first electrode pattern described above. Therefore, the extraction electrode 20a disposed on the surface side is drawn between the thick portion 14 and the thin vibration portion 16a across the step portion located on the −X ′ axis side.

  About the manufacturing method of the crystal vibrating piece 10a of the said structure, since the most is the same as the manufacturing method of the crystal vibrating piece 10 which concerns on 1st Embodiment mentioned above, suppose that the said description is used. As a difference, a thick portion located in the direction can be removed by wet etching in consideration of a residue generated on the + X′-axis side.

  The quartz crystal resonator element 10a having such a configuration is more advantageous for securing the occupation ratio of the vibrating portion as the in-plane rotation angle ψ approaches 0 ° compared to the quartz crystal resonator element according to the first embodiment. Further, since it is possible to form the outer shape by batch processing only by wet etching, the mass productivity is higher than that of the quartz crystal vibrating piece described in the cited document 1, and cracks and chips are not generated at the ends.

  Even in the case of the quartz crystal resonator element 10a having such a configuration, when the main surface to be wet-etched for forming the vibrating portion 16 is reversed (when wet etching is performed from the −Y′-axis side), The ± on the Z ″ axis and the ± on the X ′ axis are reversed.

Next, an application form of the present embodiment will be described with reference to FIG. The quartz crystal resonator element 10a according to this application mode has almost the same configuration as that of the quartz crystal oscillator piece according to the second embodiment described above. The difference is in the form of a thick portion 14a that surrounds the thin vibrating portion 16a in an L shape. In the second embodiment, the thick portion that was up to the free end side (−Z ″ shaft tip) is halfway through the vibrating portion 16a in this application form, and the vibrating portion 16a and the thick portion 14a are connected to the tip of the thick portion 14a. The thin part formed integrally is provided.
When the mechanical strength of the crystal vibrating piece 10a has a margin, the crystal vibrating piece having such a configuration may be used and can be regarded as a part of the present embodiment.

  Next, with reference to FIG. 26, a third embodiment relating to a quartz crystal vibrating piece manufactured by the manufacturing method of the present invention will be described. In the quartz crystal resonator element according to this embodiment, the thin portion forming surface is on the + Y′-axis side, and the in-plane rotation angle (Z′-axis rotation angle with respect to the Y′-axis) ψ is −25 ° ≧ ψ ≧ −60 °. It should be noted that the configuration itself of the quartz crystal resonator element according to the present embodiment is similar to the quartz crystal resonator element according to the first and second embodiments described above. The same reference numerals are added to the drawings, and the detailed description thereof is omitted.

  As described above, in the AT-cut quartz base plate, a difference occurs in the residue appearing at the step portion generated between the thin portion and the thick portion by changing the in-plane rotation angle. When the rotation angle is in the above range, the residue is likely to appear on the −X′-axis side and the −Z ″ -axis side of the thin portion. For this reason, in the crystal vibrating piece 10b according to the present embodiment, -The thick part constituting the edge located on the Z "axis side (the part that was a thick part in the case of the quartz crystal resonator element according to the conventional form) is the etching range, and the thin part constituting the vibration part 16b is occupied. The range ratio was expanded.

  The form of the electrode pattern disposed on the quartz base plate 10b of the present embodiment having the above-described configuration is substantially the same as the form of the electrode pattern of the crystal vibrating piece 10a according to the second embodiment. As a difference, there is a difference due to a difference in arrangement position of the thick portion 14 provided in the L-shape. Specifically, the electrode pattern of the crystal vibrating piece 10b according to the present embodiment and the electrode pattern of the crystal vibrating piece 10a according to the second embodiment are symmetrical with respect to a center line parallel to the Z ″ axis. This is a simple arrangement.

  Since the crystal vibrating piece 10b having such a configuration is almost the same as the method for manufacturing the quartz crystal vibrating piece 10 according to the first embodiment described above, the above description is incorporated. The difference from the method for manufacturing the quartz crystal resonator element according to the first embodiment is that the thick portion located in the direction is also removed by wet etching in consideration of the residue generated on the −X ′ axis side. Can be mentioned.

  The quartz crystal vibrating piece 10b having such a configuration is advantageous in securing the occupation ratio of the vibrating portion 16b as the in-plane rotation angle ψ approaches -30 °. Further, since it is possible to form the outer shape by batch processing only by wet etching, the mass productivity is higher than that of the quartz crystal vibrating piece described in the cited document 1, and cracks and chips are not generated at the ends.

  When the main surface subjected to wet etching for forming the thin vibrating portion 16b is reversed (when it is on the −Y ′ axis side), ± on the Z ″ axis and ± on the X ′ axis are reversed. Naturally, as shown in Fig. 27, even the quartz crystal vibrating piece 10b having the electrode pattern arrangement structure reversed can be referred to as the quartz crystal vibrating piece 10b according to the present embodiment.

Next, an application form of the present embodiment will be described with reference to FIG. The quartz crystal resonator element 10b according to this application mode has almost the same configuration as the crystal oscillator piece according to the third embodiment described above. The difference is in the form of a thick portion 14b that surrounds the thin vibrating portion 16b in an L shape. In the third embodiment, the thick portion that was up to the free end side (the −Z ″ axis tip) is halfway through the vibrating portion 16b in this application mode, and the vibrating portion 16b and the thick portion 14b are connected to the tip of the thick portion 14b. The thin part formed integrally is provided.
When the mechanical strength of the crystal vibrating piece 10b has a margin, the crystal vibrating piece having such a configuration may be used and can be regarded as a part of the present embodiment.

  Next, with reference to FIG. 29, a fourth embodiment relating to a quartz crystal vibrating piece manufactured by the manufacturing method of the present invention will be described. In the quartz crystal resonator element according to this embodiment, the thin portion forming surface is on the + Y′-axis side, and the in-plane rotation angle (Z′-axis rotation angle based on the Y′-axis) ψ is −120 ° ≧ ψ ≧ + 60 °. It should be noted that the configuration itself of the quartz crystal resonator element according to the present embodiment is similar to the quartz crystal resonator element according to the first to third embodiments described above. Parts that are the same are denoted by the reference numerals with c added to the drawings, and detailed description thereof is omitted.

  As described in the second and third embodiments, the AT-cut quartz plate has a difference in the residue appearing at the step portion formed between the thin portion and the thick portion by changing the in-plane rotation angle. . When the rotation angle is within the above range, the residue appears on the ± X ′ axis side and the −Z ″ axis side of the thin portion while increasing or decreasing the amount. For this reason, in the quartz crystal vibrating piece 10 c according to this embodiment, ± X ′ The thick part constituting the edge located on the axis side and the −Z ″ axis side (the part that was the thick part in the case of the quartz crystal resonator element according to the conventional form) is the etching range, and the thin part constituting the vibration part 16c. The ratio of the occupation range was expanded.

  In the quartz crystal resonator element 10c having such a configuration, the thick portion 14c is only the + Z ″ -axis side edge serving as the support portion, and most of the thick portion serving as the frame portion is excluded. Compared with the conventional inverted mesa type quartz vibrating piece, the proportion of the vibrating portion 16c in the overall size of the quartz base plate 12c is remarkably increased.

  Each of the electrode patterns disposed on the quartz crystal vibrating pieces 10 to 10b according to the first to third embodiments described above is employed as the form of the electrode pattern disposed on the quartz base plate 12c having the above-described configuration. Can do. Therefore, detailed description will be omitted.

  The quartz crystal resonator element 10c having such a configuration can prevent the vibration part 16c from being reduced due to residue in a wide range, and can improve the occupation ratio of the vibration part 16c while securing the strength of the support part.

  Next, an application form of the present embodiment will be described with reference to FIG. The quartz crystal resonator element 10c according to this application mode has the same configuration as that of the quartz crystal oscillator piece according to the fourth embodiment described above. The difference is in the form of a thick portion formed in an I shape at one end of the thin vibrating portion. In the fourth embodiment, the thick portion provided only on the fixed end side (+ Z ″ shaft base end portion) is extended to the middle of the vibrating portion 16c in this application mode, and the thick portion 14c is formed in a U shape. It was.

  Such a configuration is particularly effective when the vibration part 16c is relatively large, or when the thickness of the vibration part 16c is extremely thin, and assists the mechanical strength of the vibration part 16c. Even the crystal vibrating piece 10c having such a configuration can be regarded as a part of the present embodiment.

  Next, an embodiment according to the crystal device of the present invention will be described with reference to the drawings. First, with reference to FIG. 31, an embodiment according to a crystal resonator which is a crystal device will be described. In FIG. 31, FIG. 31A is a plan view of the crystal resonator (excluding the lid), and FIG. 31B is a diagram showing a cross section taken along the line AA in FIG.

The crystal resonator 50 according to the present embodiment is configured based on a package 52 and a crystal resonator element housed in the package 52.
In the case of this embodiment, the package 52 includes a substrate 56 serving as a base (bottom plate), a seal ring 55 that is bonded to the upper surface of the substrate 56 to form a side wall, and a lid 54 that seals the upper opening. Adopt things.

  On one main surface of the substrate 56 constituting the bottom plate of the package 52, internal mounting terminals 58 and 60 for mounting the crystal vibrating piece 10 and other wiring patterns are disposed. On the main surface, external mounting terminals 62 and 64 for mounting the crystal unit 50 itself on another substrate or the like are disposed. The internal mounting terminals 58 and 60 and the external mounting terminals 62 and 64 are electrically connected.

  The seal ring 55 is preferably a metal or alloy having a linear expansion coefficient close to that of the substrate 56 and having a low melting point. For example, when the constituent member of the substrate 56 is ceramic, the member constituting the seal ring 55 can be Kovar. The lid 54 may be a flat plate that plays the role of a lid, and can be variously selected depending on the application, such as a light-transmitting glass lid or a conductive metal lid. When the lid 54 is configured, it is desirable to configure the lid 54 with a member having a linear expansion coefficient approximate to the linear expansion coefficient of the joining member.

  The crystal resonator element mounted on the package 52 having the above-described configuration may employ any of the crystal resonator elements 10 to 10c according to the first to fourth embodiments (in FIG. 31, as an example, the crystal oscillator Adopting piece 10). In the present embodiment, the extraction electrode 26 is routed through the side surface of the quartz base plate 12, and the crystal resonator element 10 in which the two connection electrodes 22 and 28 are disposed on one main surface (front side) is mounted. Yes.

  The quartz crystal resonator element 10 having the above-described configuration is mounted on the internal mounting terminals 58 and 60 disposed on the substrate 56 via a conductive adhesive 66 or a conductive bonding member such as a bump.

  In the manufacturing method of the crystal unit 50 having such a configuration, first, the conductive adhesive 66 is applied to the internal mounting terminals 58 and 60 in the substrate 56 constituting the package 52. Next, the crystal vibrating piece 10 is mounted so that the connection electrodes 22 and 28 are aligned with the upper part of the conductive adhesive 66. After the mounting of the crystal vibrating piece 10 is completed, the upper opening is sealed with the lid 54 through various steps such as frequency adjustment. When a metal lid is employed for the lid 54, seam welding can be employed as the sealing means.

  In the crystal resonator 50 having such a configuration, in addition to the effect depending on the crystal vibrating piece 10, there is an effect that it is not necessary to apply the conductive adhesive 66. For this reason, even when the side wall of the cavity is constituted by the seal ring 55 which is a conductive alloy, it is not necessary to increase the distance between the mounting position of the crystal vibrating piece 10 and the seal ring 55, and the package 52 Miniaturization can be performed. Further, as the conductive bonding member used for mounting, a bump having a lower risk of disconnection than the conductive adhesive 66 can be used, and the width of the mounting form can be widened and the vibration characteristics can be stabilized.

  In addition, as the crystal vibrating piece 10, one in which the connection electrodes 22 and 28 are disposed on the front and back surfaces of the crystal base plate 12 may be employed. In this case, for mounting the crystal vibrating piece 10, it is preferable to use the conductive adhesive 66 and apply it on the top (see FIG. 32) so as to achieve conduction between the front and back surfaces of the crystal base plate 12. Even such a form can be regarded as a part of the crystal resonator according to the present embodiment.

  Further, in the case of adopting a crystal vibrating piece in which the connection electrodes 22 and 28 are arranged along the Z ″ axis as shown in FIGS. 8 to 14, a package as shown in FIG. 33 should be adopted. 33 is characterized in that the internal mounting terminals 58 and 60 are arranged along the long side direction of the package 52. The internal mounting terminals 58 and 60 are arranged as shown in FIG. By doing so, it is possible to mount the crystal vibrating piece 10 in which the connection electrodes 22 and 28 are arranged along the Z ″ axis obtained by rotating the Z ′ axis around −30 ° ± 5 ° around the Y ′ axis. The quartz crystal resonator element 10 can be fixed at two points that are present in the direction in which the sensitivity to the stress applied to the crystal becomes the most dull. Therefore, the influence of the stress applied to the package or the like on the frequency characteristics is small.

  In the above-described embodiment, a crystal resonator is used as the target of the crystal device, and an example of a crystal resonator element that is suitable for this is given. However, the crystal device according to the present invention can also include a crystal filter. For example, when a crystal vibrating piece as shown in FIG. 34 is employed, a double mode filter can be configured as a crystal device.

  As the crystal vibrating piece 10d to be adopted, the same crystal vibrating pieces 10 to 10c according to the first to fourth embodiments described above regarding the form of the crystal base plate 12d can be adopted (in FIG. 34, as an example, a crystal Adopt the same as the vibrating piece 10). In addition, the electrode patterns provided on the front and back surfaces of the quartz base plate 12d may be as follows. That is, the electrode 24d is formed on the entire main surface (for example, the main surface on which wet etching is performed to form the vibrating portion 16d). The other main surface (for example, the main surface on the flat surface) has two excitation electrodes 18d and 19d, two connection electrodes 22d and 23d, and the respective excitation electrodes 18d and 19d and the connection electrodes. Lead electrodes 20d and 21d are provided to electrically connect 22d and 23d.

  Here, the excitation electrodes 18d and 19d are both disposed in the vibrating portion 16d formed thin. The two excitation electrodes 18d and 19d are set to individually excite vibrations in the zero-order symmetric vibration mode (S0 mode) and the zero-order antisymmetric vibration mode (A0 mode). When the resonance frequencies of the respective vibration modes are fs and fa, the pass band width of the dual mode filter is almost twice the difference between the two resonance frequencies, that is, fa−fs. Note that the resonance frequencies fs and fa vary depending on the thickness of the vibrating portion 16, the frequency reduction amount of the excitation electrodes 18d and 19d, and the distance d between the two excitation electrodes 18d and 19d. Even a crystal device having such a configuration can be regarded as one of the crystal devices according to the present invention.

  FIG. 34 shows an example of a 2-pole MCF (Monolithic Crystal Filter) having two excitation electrodes 18d and 19d on one crystal base plate 12d. However, the number of excitation electrodes is not limited to two, and may be three or more. For example, in FIG. 34, the electrode 24d formed on the entire surface of one of the main surfaces is divided into two, and two excitation electrodes opposed to the one electrode 24d are provided to constitute a two-pole MCF, and the other electrode 24d is provided with the other electrode 24d. You may make it comprise a crystal oscillator by the one excitation electrode which opposes. Naturally, a 4-pole MCF having two 2-pole MCFs may be used, or one 2-pole MCF and two crystal resonators may be configured. Increasing the size of the vibrating part in order to increase the area occupied by the vibrating part in the quartz base plate causes various possibilities of use as described above.

  Next, an embodiment of a crystal oscillator that can be included in a crystal device on which a crystal resonator element manufactured by the manufacturing method of the present invention is mounted will be described with reference to the drawings. First, the crystal oscillator according to the first embodiment will be described with reference to FIG.

  The crystal oscillator 100 according to this embodiment uses the crystal resonator 50 shown in FIGS. 31 and 32 as it is, and includes an IC 110 including a lead frame 112 and an oscillation circuit in addition to the crystal resonator 50.

  Specifically, the IC 110 is mounted on the upper surface of the lead frame 112, and the inverted crystal unit 50 is mounted on the lower surface of the lead frame 112. The lead frame 112 and the IC 110, and the IC 110 and the crystal unit 50 are respectively connected by the metal wires 114. It is to connect.

  The crystal oscillator 100 having the above-described configuration is molded with the resin 130 except for the tip of the lead frame 112 serving as an external mounting terminal in order to protect the active surface of the IC 110, the metal wire 114, and the connection portion. Consists of.

Next, a crystal oscillator according to a second embodiment will be described with reference to FIG.
As shown in FIG. 36, the crystal oscillator 100a according to the present embodiment takes a form in which the IC 110 and the crystal resonator element 10 are accommodated in one package 106. In the case of the embodiment shown in FIG. 36, the quartz crystal resonator element 10 and the IC 110 are arranged so as to overlap in the vertical direction in order to reduce the size of the crystal oscillator. Specifically, the cavity of the package base 104 is formed in a step shape, and the IC 110 is mounted on the bottom plate portion located at the lowest step. An internal terminal 118 for electrically connecting the IC 110 and the package base 104 is provided on a stage above the stage on which the IC 110 is mounted, and a terminal 116 provided on the active surface of the IC 110 and an internal terminal provided on the package base 104 are provided. 118 is connected by a metal wire 114. Then, an internal mounting terminal 120 for mounting the crystal vibrating piece 10 is provided on a stage above the stage where the internal terminal 118 is provided, and the crystal vibrating piece 10 is mounted via a conductive adhesive 124. After the crystal vibrating piece 10 is mounted, the upper opening of the package base 104 is sealed with the lid 102.

  As another embodiment of the crystal oscillator, one shown in FIG. 37 can be cited. In the embodiment shown in FIG. 37, a package base 104 having a so-called H-shaped cross section is employed, and the crystal vibrating piece 10 is mounted on one of the cavities provided at the top and bottom and sealed by the lid 102. In addition, the IC 110 is mounted on the other side. Even the crystal oscillator 100b having such a configuration can be regarded as a part of the present invention.

10 ......... Crystal vibrating piece, 12 ......... Crystal base plate, 14 ......... Thick part, 16 ......... Vibrating part, 18 ...... Excitation electrode, 20 ...... Extraction electrode, 22 ......... Connection Electrode 24... Excitation electrode 26... Extraction electrode 28... Connection electrode 30... Wafer 32... Mask 34. Etching region, 36... Individual piece forming region, 38... Through groove forming region, 38 a... Through groove forming region, 40. 50 .... Quartz crystal, 100 ... Quartz oscillator.

Claims (2)

By rotating the + Z 'axis around the Y' axis in the + X axis direction on the AT-cut quartz plate as a positive rotation angle, the Z 'axis is rotated around the Y' axis in the range of -120 ° to + 60 °. A quartz crystal resonator element using a wafer having an edge parallel to each of a Z ″ axis and an X ′ axis perpendicular to the Z ″ axis,
When processing is performed from the + Y′-axis-side main surface, the thin portion forming region constituting the vibration portion, the outer peripheral portion of the thick portion forming region adjacent to the thin portion forming region, and at least the thin portion forming region When the outer peripheral portion of the thick portion non-formation region provided at the end of the −Z ″ axis is processed from the −Y′-axis side, the thin portion formation region constituting the vibration portion and the thin portion formation region A first etching step of performing wet etching on an outer peripheral portion of an adjacent thick portion forming region and at least an outer peripheral portion of a thick portion non-forming region provided at an end on the + Z ″ axis side of the thin portion forming region;
And a second etching step of wet-etching the outer peripheral portion of the thick portion forming region and the outer peripheral portion of the thick portion non-forming region to penetrate in the Y′-axis direction. Method. By rotating the + Z 'axis around the Y' axis in the + X axis direction on the AT-cut quartz plate as a positive rotation angle, the Z 'axis is rotated around the Y' axis in the range of -120 ° to + 60 °. A quartz crystal resonator element using a wafer having an edge parallel to each of a Z ″ axis and an X ′ axis perpendicular to the Z ″ axis,
When processing from the + Y′-axis side, the outer peripheral portion of the thin portion forming region that forms the vibrating portion and at least the thick portion non-forming region provided at the −Z ″ -axis side end of the thin portion forming region, -When processing from the Y 'axis side, wet the outer peripheral part of the thin part forming area constituting the vibration part and the thick part non-forming area provided at least at the + Z "axis side end of the thin part forming area. A first etching step for etching;
Second etching in which the outer peripheral portion of the thick portion forming region adjacent to the vibrating portion forming region and the outer peripheral portion of the thick portion non-forming region are wet-etched from both main surfaces of the wafer in the Y′-axis direction. A method of manufacturing a quartz crystal vibrating piece.

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