JP2010080672A - Photoelectric conversion device and method for manufacturing photoelectric conversion device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To reduce a reflectance loss of a transparent conductive layer/photoelectric conversion layer interface, and to extremely improve the interface electric characteristics of the conductive layer and the photoelectric conversion layer. <P>SOLUTION: The photoelectric conversion device includes sequentially from a light entering side: a light translucent substrate; a transmissive conductive layer; a p-type conductive layer including a silicon oxide; a p-type conductive layer including a microcrystalline silicon; a photoelectric conversion layer; and a back electrode layer. The p-type conductive layer including the silicon oxide is formed on the transmissive conductive layer, the p-type conductive layer including the microcrystalline silicon is formed on the p-type conductive layer including silicon oxide, and the photoelectric conversion layer is formed on the p-type conductive layer including the microcrystalline silicon. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a photoelectric conversion device, and more particularly to a photoelectric conversion device having an antireflection structure that improves photoelectric conversion characteristics.

In patent document 1, “it microcrystallizes in order to improve the photoconductivity of the a-Si system film | membrane which falls when adding another element and using it as a window layer of a solar cell, and making it a wide gap.” As a configuration, “(CO ₂ + SiH ₄ + H ₂ ) mixed gas with a flow rate ratio of CO ₂ to (SiH ₄ + CO ₂ ) of 0.6 or less is subjected to glow discharge decomposition by increasing the high frequency power density” , “A semiconductor film in which a microcrystalline phase of Si and an a-SiO phase are mixed can be obtained. This film has a high photoconductivity of 10 ⁻⁶ S / cm or more and an absorption coefficient of 10 ⁶ cm ^{−. The} effect is “showing a low value of ¹ or less”.
JP-A-6-267868

  From the description of the entire patent document 1, the “p-type SiO film formed according to the present invention” in FIG. 2 in the brief description column of the drawings of patent document 1 can be interpreted as having the same meaning as described below; In the SiO film in which the microcrystallized Si layer and the a-SiO phase are mixed ”(column 0008),“ SiO according to the embodiment of the present invention (column 0011) ”,“ line 11 (FIG. 1) ” A-SiO film including a microcrystalline phase (column 0011) "or" 3 p-type a-Si layer (description column) ".

  According to the description in column 0006 of Patent Document 1, “3 p-type a-Si layer (description column)” in FIG. 2 of Patent Document 1 is “p-type SiO film (drawing) according to the present invention” 2) ”in the simple explanation column.

  Patent Document 1 discloses a silicon oxide (hereinafter referred to as SiO) having a low light absorption coefficient and a high photoconductivity obtained by microcrystallizing an amorphous silicon oxide (hereinafter referred to as a-SiO) film containing oxygen among a-Si based films. It is to provide a film forming method suitable for the industrialization of semiconductor films. (Column 0006). That is, the “a-Si-based film” in the column 0006 is “3 p-type a-Si layer (description column)” in FIG. 2, and “p-type SiO film formed by the present invention”. (FIG. 2 in the simple description column of the drawing).

  According to such an interpretation, FIG. 2 of Patent Document 1 describes, in order from the light incident side, one glass substrate, two transparent electrodes, 3p-type a-Si layer, that is, sequentially from the light incident side. 1 glass substrate, 2 transparent electrode, 3p-type SiO film.

  That is, in Patent Document 1, since a layer containing silicon oxide is directly formed on the transparent conductive layer, the interfacial electrical characteristics are remarkably deteriorated, and there is a strong concern about a decrease in the fill factor of the photoelectric conversion layer. In Patent Document 1, the insertion of a p / i interface layer is shown in FIG. 2 of Patent Document 1, but there is no description or suggestion of what kind of material is used.

  Accordingly, an object of the present invention is to remarkably improve the interfacial electrical characteristics between the p-type conductivity type layer containing silicon oxide and the photoelectric conversion layer.

  Another object of the present invention is to reduce the reflection loss at the transparent conductive film / photoelectric conversion layer interface, and the p-type conductivity layer / photoelectric layer containing silicon oxide that does not impair the translucency, conductivity, and bonding characteristics of the interface. It is providing the photoelectric conversion apparatus which has a conversion layer, and its manufacturing method.

  In the first aspect of the present invention, in order from the light incident side, a translucent substrate, a transparent conductive layer, a p-type conductivity type layer containing silicon oxide, a p-type conductivity type layer containing microcrystalline silicon, and a photoelectric conversion layer And a back electrode layer, wherein the p-type conductivity type layer including silicon oxide is formed on the transparent conductive layer, and the p-type conductivity type layer including microcrystalline silicon is formed of silicon oxide. The photoelectric conversion device is formed on a p-type conductivity type layer including the photoelectric conversion layer, and the photoelectric conversion layer is formed on a p-type conductivity type layer including microcrystalline silicon.

  The present invention is also a photoelectric conversion device in which the refractive index value of the p-type conductivity type layer containing silicon oxide is larger than the refractive index of the transparent conductive layer and smaller than the refractive index of the photoelectric conversion layer.

The present invention is also a photoelectric conversion device, wherein the p-type conductivity type layer containing silicon oxide has a conductivity of 10 ⁻⁷ S / cm or more.

The present invention is also a photoelectric conversion device, wherein the p-type conductivity type layer containing microcrystalline silicon has a conductivity of 10 ⁻² S / cm or more.

  The present invention also includes a step of forming a transparent conductive layer on a translucent substrate, a step of forming a p-type conductive type layer containing silicon oxide on the transparent conductive layer, and a p-type conductive containing the silicon oxide. A step of forming a p-type conductivity type layer containing microcrystalline silicon on the mold layer, a step of forming a photoelectric conversion layer on the p-type conductivity type layer containing microcrystalline silicon, and a back electrode on the photoelectric conversion layer And a process for forming a photoelectric conversion device.

  The present invention is also a method for producing a photoelectric conversion device, wherein a refractive index value of the p-type conductivity type layer containing silicon oxide is larger than a refractive index of the transparent conductive layer and smaller than a refractive index of the photoelectric conversion layer.

The present invention is also a method for manufacturing a photoelectric conversion device, wherein the p-type conductivity type layer containing silicon oxide has a conductivity of 10 ⁻⁷ S / cm or more.

The present invention is also a method for producing a photoelectric conversion device, wherein the p-type conductivity type layer containing microcrystalline silicon has a conductivity of 10 ⁻² S / cm or more.

  Hereinafter, means for solving the problem will be described using the numbers and symbols used in the best mode for carrying out the invention. These numbers and symbols are added in parentheses in order to clarify the correspondence with the best mode for carrying out the description and explanation of the claims. However, these numbers and symbols are exemplifications, and should not be used for a limited interpretation of the technical scope of the invention described in the claims.

  The photoelectric conversion device 1 of the present invention includes, in order from the light incident side, a translucent substrate 2, a transparent conductive layer 3, a p-type conductivity type layer 41 containing silicon oxide, and a p-type conductivity type layer containing microcrystalline silicon. 42, a photoelectric conversion layer 5, an n-type conductivity type layer 6, and a back electrode layer 7, wherein a p-type conductivity type layer 41 containing silicon oxide is formed on the transparent conductive layer 3. The p-type conductivity type layer 42 containing microcrystalline silicon is formed on the p-type conductivity type layer 41 containing silicon oxide, and the photoelectric conversion layer 5 is formed on the p-type conductivity type layer 42 containing microcrystalline silicon. Formed.

  The refractive index value of the p-type conductivity layer 41 containing silicon oxide is preferably larger than the refractive index of the transparent conductive layer 3 and smaller than the refractive index of the photoelectric conversion layer 5.

In the photoelectric conversion device 1, the p-type conductivity layer 41 containing silicon oxide preferably has a conductivity of 10 ⁻⁷ S / cm or more.

In the photoelectric conversion device 1, the p-type conductivity layer 42 containing microcrystalline silicon preferably has a conductivity of 10 ⁻² S / cm or more.

  Moreover, the manufacturing method of the photoelectric conversion device 1 of the present invention includes the step of forming the transparent conductive layer 3 on the translucent substrate 2 and the formation of the p-type conductivity type layer 41 containing silicon oxide on the transparent conductive layer 3. A step of forming a p-type conductivity type layer 42 containing microcrystalline silicon on the p-type conductivity type layer 41 containing silicon oxide, and a photoelectric conversion on the p-type conductivity type layer 42 containing microcrystalline silicon. It is preferable to include a step of forming the layer 5 and a step of forming the back electrode layer 7 on the photoelectric conversion layer 5.

  In the method for manufacturing the photoelectric conversion device 1, the refractive index value of the p-type conductivity type layer 41 containing silicon oxide is preferably larger than the refractive index of the transparent conductive layer 3 and smaller than the refractive index of the photoelectric conversion layer 5.

In the method for manufacturing the photoelectric conversion device 1, the p-type conductivity layer 41 containing silicon oxide preferably has a conductivity of 10 ⁻⁷ S / cm or more.

In the method for manufacturing the photoelectric conversion device 1, the p-type conductivity layer 42 containing microcrystalline silicon preferably has a conductivity of 10 ⁻² S / cm or more.

In the present invention, the low refractive index of silicon oxide is realized by adjusting the CO ₂ flow rate with respect to SiH _{4. In} general, however, porous silicon oxide generated by increasing the CO ₂ flow rate does not contribute to conductivity. Due to the presence of voids, it tends to be difficult to maintain high electrical conductivity. If the film quality of the photoelectric conversion layer is constant, porous silicon oxide having low conductivity tends to lower the fill factor of the solar cell. However, as in the present invention, a p-type conductivity type layer containing microcrystalline silicon, which has higher conductivity than porous silicon oxide, is inserted between the p-type conductivity type layer containing silicon oxide and the photoelectric conversion layer. By doing so, an interface electrical characteristic can be improved and a fill factor can be improved.

  According to the present invention, the interface electrical characteristics between the p-type conductivity layer containing silicon oxide and the photoelectric conversion layer are remarkably improved, the reflection loss at the transparent conductive layer / photoelectric conversion layer interface is reduced, and the translucency of this interface is It is possible to obtain a photoelectric conversion device having a p-type conductivity type / photoelectric conversion layer containing silicon oxide that does not impair conductivity and bonding characteristics, and a method for manufacturing the photoelectric conversion device.

  First, a configuration of an embodiment of a photoelectric conversion device according to the present invention will be described.

  FIG. 1 is a cross-sectional view showing a configuration of an embodiment of a photoelectric conversion device according to the present invention. The photoelectric conversion device 1 is a super straight type. The photoelectric conversion device 1 includes a translucent substrate 2, a transparent conductive layer 3, a p-type conductivity type layer 41 containing silicon oxide, a p-type conductivity type layer 42 containing microcrystalline silicon, a photoelectric conversion layer 5, and an n-type conductivity type layer. 6 and the back reflective electrode layer 7. These are laminated in this order. The light hν enters the photoelectric conversion device 1 from the translucent substrate 2 side, and is photoelectrically converted in the photoelectric conversion device 1.

(Translucent substrate)
The translucent substrate 2 is a transparent substrate for a photoelectric conversion device, and at least one of glass or plastic material is selected. That is, the translucent substrate is preferably a translucent insulating substrate. In order to reduce the reflection loss (4 to 5%) on the light incident surface of the translucent substrate 2, it is preferable to previously coat an antireflection film (not shown) on the sunlight incident side.

(Transparent conductive layer)
The transparent conductive layer 3 is formed on the translucent substrate 2. The transparent conductive layer 3 is a highly light-transmissive conductive oxide exemplified by a material mainly composed of one selected from indium oxide, zinc oxide and tin oxide, or a combination of two or more thereof. It is. The refractive index of the transparent conductive layer is usually in the range of about 1.6 to 2.0. The film thickness of the transparent conductive layer is 1000 to 5000 nm. The surface of the transparent conductive layer preferably has a concavo-convex structure from which a sufficient light confinement effect (light scattering effect) of the photoelectric conversion device 1 can be expected. The shape and size of the surface irregularities of the transparent conductive layer 3 can be controlled by the film forming conditions and chemical treatment of the material. In order to prevent the photoelectric conversion layer from being short-circuited due to the uneven spike or the collision of crystal growth, the average height difference of the transparent conductive layer is preferably 500 nm or less. At the interface between the translucent substrate 2 and the transparent conductive layer 3, an antireflection layer (not shown), a crystal nucleus layer (not shown) of the transparent conductive layer 3, or an impurity diffusion prevention layer (not shown), etc. May be included.

(P-type conductivity layer containing silicon oxide)
The p-type conductive layer 41 containing silicon oxide can be produced as follows. As the source gas, a mixed gas of SiH ₄ , H ₂ and CO ₂ is suitable. As the doping gas, a group III element such as boron is used. In order to reduce the refractive index, voids that do not contribute to conductivity may exist in silicon oxide. From the antireflection effect, the refractive index is larger than the refractive index of the transparent conductive layer 3 and smaller than the refractive index of the photoelectric conversion layer 5. In particular, the above conditions are preferably satisfied at a wavelength of 600 nm where the sunlight intensity is the highest. The refractive index may be constant in the film thickness direction, or the refractive index may change midway. Furthermore, the refractive index may be increased or decreased periodically. The silicon oxide may or may not include a crystalline silicon component. In view of conductivity, it is more preferable to include a crystalline material. The conductivity is preferably 10 ⁻⁷ S / cm or more. In particular, in terms of the photoelectric conversion device 1 of the fill factor improvement is preferably 10 ^-3 S / cm or more. The film forming conditions by the plasma CVD method at that time are as follows: substrate film forming surface-electrode distance 11 mm, substrate temperature 190 ° C., pressure 600 to 900 Pa, high frequency power 100 to 500 W, SiH ₄ / CO ₂ / B ₂ H ₆ / H. _{2 The} flow rates were (15-24) / (15-25) / 200/15000 sccm, respectively. At this time, the refractive index at a wavelength of 600 nm of the p-type conductivity type layer 41 containing silicon oxide formed is in the range of 2.0 to 3.0, and the conductivity is 10 ⁻⁷ to 10 ⁻² S / cm. Was in the range. In addition to the plasma CVD method, the film is formed by at least one method selected from a CVD method using a heating catalyst, a thermal CVD method, a photo CVD method, and a reactive sputtering method.

(P-type conductivity layer containing microcrystalline silicon)
As the source gas, SiH ₄ and H ₂ mixed gas are suitable. It contains a group III element such as boron as an impurity, and includes a crystal phase composed of several nanocrystalline silicon. In order to improve the electrical characteristics of the interface between the p-type conductivity type layer 41 containing silicon oxide and the photoelectric conversion layer 5, the conductivity is preferably 10 ⁻² S / cm or more, and the absorption loss of incident light It is preferable that the absorption coefficient is small so as not to occur. Further, the film thickness is made as thin as possible so that the above-described absorption loss does not occur, and is preferably about 1 nm or less. The microcrystalline silicon is formed by at least one method selected from a plasma CVD method, a CVD method using a heating catalyst, a thermal CVD method, a photo CVD method and a reactive sputtering method. In view of productivity, it is more preferable to use the plasma CVD method.

(Photoelectric conversion layer)
The photoelectric conversion layer 5 is formed on the p-type conductivity type layer 4. Examples of the material of the photoelectric conversion layer 5 include a-Si, microcrystalline silicon, amorphous silicon germanium, microcrystalline silicon germanium, and the like to which no impurity is added. Although the refractive index of a photoelectric converting layer changes with film-forming conditions, it is usually in the range of about 3.0 to 6.0 in many cases. In the case of a photoelectric conversion layer containing microcrystalline silicon, the refractive index at 600 nm is often in the range of about 3.5 to 5.0. The film thickness of the photoelectric conversion layer is preferably in the range of 100 to 10,000 nm. The film is preferably formed by at least one method selected from the plasma CVD method, the CVD method using a heating catalyst, the thermal CVD method, and the reactive sputtering method.

(N-type conductivity layer)
The n-type conductivity type layer 6 is formed on the photoelectric conversion layer 5. Examples of the material of the n-type conductivity type layer 6 include a-Si, amorphous silicon carbide, microcrystalline silicon, and microcrystalline silicon carbide containing a group V element such as phosphorus as an impurity. The film thickness is preferably in the range of 1 to 500 nm. The film is preferably formed by at least one method selected from the plasma CVD method, the CVD method using a heating catalyst, the thermal CVD method, and the reactive sputtering method.

(Back electrode layer)
The back surface reflective electrode layer 7 has high conductivity and high reflectance, and preferably includes a transparent conductive layer 71 and a back surface metal electrode 72.

  The transparent conductive layer 71 is formed on the n-type conductive layer 6 on the outermost surface of the photoelectric conversion layer 5. Improvement of the reflectance of infrared light and diffusion of the back surface metal electrode 72 to the photoelectric conversion layer 5 are prevented. For example, it is preferable to use tin oxide, zinc oxide, indium oxide, or the like as a main component.

  The back metal electrode 72 is formed on the transparent conductive layer 71. It has high reflectivity in the visible to infrared region and has high conductivity. It is preferably formed of one metal selected from Ag, Au, Al, Cu and Pt, or an alloy containing these metals.

Furthermore, the p-type conductivity type layer 41 containing the silicon oxide, the p-type conductivity type layer 42 containing microcrystalline silicon, the photoelectric conversion layer 5, the n-type conductivity type layer 6, and the back surface leaving the transparent conductive layer 3 In order to separate the electrode layer 7 into island shapes, a plurality of back surface electrode layer separation grooves (not shown) were formed by irradiating the translucent substrate 1 with a YAG second harmonic pulse laser. Further, a back electrode layer separation groove (not shown) is further formed outside the island-shaped separation region adjacent to one back electrode layer separation groove, and solder is infiltrated into the transparent conductive layer 3. A photoelectric conversion device was manufactured by forming a contact region (not shown). The photoelectric conversion device has an effective area of 1 cm ² .

  The photoelectric conversion device may include a multi-junction photoelectric conversion layer using a plurality of photoelectric conversion layers having different optical band gaps. For example, when viewed from the light incident side, a two-junction photoelectric conversion device in which the first photoelectric conversion layer is amorphous silicon and the second photoelectric conversion layer is microcrystalline silicon, or the first photoelectric conversion layer is amorphous silicon germanium, A two-junction photoelectric conversion device in which the conversion layer is amorphous silicon, or a three-junction photoelectric conversion device in which the first and second photoelectric conversion layers are amorphous silicon and the third photoelectric conversion layer is microcrystalline silicon, or the first There are three-junction photoelectric conversion devices in which the photoelectric conversion layer is amorphous silicon and the second and third photoelectric conversion layers are microcrystalline silicon.

  Examples of the present invention will be described below.

(Comparative Example 1)
As a comparative example of the present invention, on a p-type microcrystalline silicon layer having a conductivity of 5.32 × 10 ⁻¹ S / cm, a refractive index at a wavelength of 600 nm measured by spectroscopic ellipsometry of 4.60, and a film thickness of 20 nm. In addition, a photoelectric conversion device in which microcrystalline silicon was formed as a photoelectric conversion layer was manufactured. The film formation conditions for the microcrystalline silicon layer were as follows: substrate deposition surface-electrode distance 11 mm, substrate temperature 190 ° C., pressure 950 Pa, high frequency power 400 W, SiH ₄ / B ₂ H ₆ / H ₂ flow rate 15/40 / It was set to 6000 sccm. The photoelectric conversion device is irradiated with simulated sunlight having a spectral distribution of AM1.5 and an energy density of 100 mW / cm ² under a measurement atmosphere and a solar cell temperature of 25 ± 1 ° C., and the transparent conductive layer 3 is contacted through the contact region. The output characteristics of the thin film solar cell were measured by measuring the voltage and current between the contacted positive electrode probe and the negative electrode probe brought into contact with the back electrode layer 7. The photoelectric conversion device had a short-circuit current of 22.9 mA / cm ² , an open-circuit voltage of 0.506 V, a fill factor of 0.696, and a conversion efficiency of 8.08%.

Example 1
As Example 1 of the present invention, p-type containing silicon oxide having a conductivity of 2.76 × 10 ⁻⁷ S / cm, a refractive index of 2.19 at a wavelength of 600 nm measured by spectroscopic ellipsometry, and a thickness of about 20 nm. A photoelectric conversion device in which microcrystalline silicon was formed as a photoelectric conversion layer on the conductive type layer in the same manner as in Comparative Example 1 was produced. The film forming conditions of the p-type conductivity type layer containing silicon oxide are as follows: the distance between the substrate film forming surface and the electrode is 11 mm, the substrate temperature is 190 ° C., the pressure is 600 Pa, the high frequency power is 400 W, SiH ₄ / CO ₂ / B ₂ H ₆ / H _{2 The} flow rates were 15/25/200/15000 sccm, respectively. The output characteristics of the photoelectric conversion device were measured in the same manner as in Comparative Example 1. The photoelectric conversion device had a short-circuit current of 23.4 mA / cm ² , an open-circuit voltage of 0.516 V, a fill factor of 0.639, and a conversion efficiency of 7.72%.

(Example 2)
As Example 2 of the present invention, p-type conductivity containing silicon oxide having a conductivity of 3.55 × 10 ⁻⁶ S / cm, a refractive index at a wavelength of 600 nm measured by spectroscopic ellipsometry of 2.74, and a film thickness of about 20 nm. A photoelectric conversion device in which microcrystalline silicon was formed as a photoelectric conversion layer on the mold layer in the same manner as in Comparative Example 1 was produced. The film forming conditions of the p-type conductivity type layer containing silicon oxide are as follows: the distance between the substrate film forming surface and the electrode is 11 mm, the substrate temperature is 190 ° C., the pressure is 600 Pa, the high frequency power is 400 W, SiH ₄ / CO ₂ / B ₂ H ₆ / H _{2 The} flow rates were 24/25/200/15000 sccm, respectively. The output characteristics of the photoelectric conversion device were measured in the same manner as in Comparative Example 1. The photoelectric conversion device had a short-circuit current of 23.0 mA / cm ² , an open-circuit voltage of 0.509 V, a fill factor of 0.694, and a conversion efficiency of 8.16%.

(Example 3)
As Example 3 of the present invention, p-type containing silicon oxide having a conductivity of 5.81 × 10 ⁻³ S / cm, a refractive index at a wavelength of 600 nm measured by spectroscopic ellipsometry of 2.97, and a film thickness of about 20 nm. A photoelectric conversion device in which microcrystalline silicon was formed as a photoelectric conversion layer on the conductive type layer in the same manner as in Comparative Example 1 was produced. The film forming conditions of the p-type conductivity type layer containing silicon oxide are as follows: substrate forming surface-electrode distance 11 mm, substrate temperature 190 ° C., pressure 600-900 Pa, high frequency power 100-500 W, SiH ₄ / CO ₂ / B ₂ The H ₆ / H ₂ flow rates were 24/15/200/15000 sccm, respectively. The output characteristics of the photoelectric conversion device were measured in the same manner as in Comparative Example 1. The photoelectric conversion device had a short-circuit current of 21.9 mA / cm ² , an open-circuit voltage of 0.514 V, a fill factor of 0.719, and a conversion efficiency of 8.12%.

Example 4
As Example 4 of the present invention, the conductivity used in Example 1 is 2.76 × 10 ⁻⁷ S / cm, the refractive index at a wavelength of 600 nm measured by spectroscopic ellipsometry is 2.19, and the film thickness is about 20 nm. On the p-type conductivity type layer containing silicon oxide, a p-type conductivity type layer containing microcrystalline silicon with a conductivity of 5.32 × 10 ⁻¹ and having a thickness of 1 nm or less is laminated. A photoelectric conversion device using a photoelectric conversion layer using microcrystalline silicon as a photoelectric conversion layer was manufactured. The output characteristics of the photoelectric conversion device were measured in the same manner as in Comparative Example 1. The photoelectric conversion device had a short-circuit current of 23.1 mA / cm ² , an open-circuit voltage of 0.510 V, a fill factor of 0.696, and a conversion efficiency of 8.19%.

  The table which put together the short circuit current (Jsc), the open circuit voltage (Voc), the fill factor (FF), and the conversion efficiency (Eff) of the photoelectric conversion apparatus produced in the comparative example and Examples 1 to 4 below (Table 1) ).

From Examples 1 to 3, in order to improve the short-circuit current, the refractive index of the p-type conductive layer containing silicon oxide is preferably larger than the refractive index of the transparent conductive layer and smaller than the refractive index of the photoelectric conversion layer. . In particular, in terms of the antireflection effect, the refractive index is more preferably in the range of 2.0 to 3.0. In order not to cause a significant decrease in fill factor, the conductivity of the p-type conductivity layer containing silicon oxide is preferably 10 ⁻⁷ S / cm or more. In particular, it is more preferably 10 ⁻³ S / cm or more in terms of improving the fill factor.

Further, Example 4 is a p-type conductivity type containing microcrystalline silicon having a conductivity of 5.32 × 10 ⁻¹ on a p-type conductivity type layer containing silicon oxide formed as in Example 1. By forming the layer, the short-circuit current was improved without causing a decrease in fill factor compared to Example 1, and the conversion efficiency was improved. Therefore, the conductivity of the p-type conductivity layer containing microcrystalline silicon is preferably 10 ⁻² S / cm or more.

1 is a cross-sectional view of a photoelectric conversion device according to an embodiment of the present invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Photoelectric conversion apparatus 2 Translucent substrate 3 Transparent conductive layer 4 P-type conductive layer 41 P-type conductive layer 42 containing silicon oxide p-type conductive layer 5 containing microcrystalline silicon Photoelectric conversion layer 6 N-type conductive layer 7 Back surface reflective electrode layer 71 Transparent conductive layer 72 Back surface metal electrode

Claims (8)

  In order from the light incident side, a translucent substrate, a transparent conductive layer, a p-type conductivity type layer containing silicon oxide, a p-type conductivity type layer containing microcrystalline silicon, a photoelectric conversion layer, a back electrode layer, The p-type conductivity type layer containing silicon oxide is formed on the transparent conductive layer, and the p-type conductivity type layer containing microcrystalline silicon is on the p-type conductivity type layer containing silicon oxide. A photoelectric conversion device, wherein the photoelectric conversion layer is formed on a p-type conductivity layer containing microcrystalline silicon.   2. The photoelectric conversion device according to claim 1, wherein a refractive index value of the p-type conductivity type layer containing silicon oxide is larger than a refractive index of the transparent conductive layer and smaller than a refractive index of the photoelectric conversion layer. . 2. The photoelectric conversion device according to claim 1, wherein the conductivity of the p-type conductivity type layer containing silicon oxide is 10 ⁻⁷ S / cm or more. 2. The photoelectric conversion device according to claim 1, wherein the p-type conductivity type layer containing microcrystalline silicon has a conductivity of 10 ⁻² S / cm or more.   Forming a transparent conductive layer on the translucent substrate; forming a p-type conductivity type layer containing silicon oxide on the transparent conductive layer; and microcrystals on the p-type conductivity type layer containing silicon oxide. Forming a p-type conductivity type layer containing silicon, forming a photoelectric conversion layer on the p-type conductivity type layer containing microcrystalline silicon, forming a back electrode on the photoelectric conversion layer, and The manufacturing method of the photoelectric conversion apparatus which comprises this.   6. The method for manufacturing a photoelectric conversion device according to claim 5, wherein the refractive index value of the p-type conductivity type layer containing silicon oxide is larger than the refractive index of the transparent conductive layer and smaller than the refractive index of the photoelectric conversion layer. A method for manufacturing a photoelectric conversion device. It is a manufacturing method of the photoelectric conversion apparatus of Claim 5, Comprising: The p-type conductivity type layer containing the said silicon oxide is a manufacturing method of the photoelectric conversion apparatus whose electrical conductivity is 10 ^<-7 > S / cm or more. A manufacturing method of a photoelectric conversion device according to claim 5, p-type conductivity type layer including the microcrystalline silicon, the conductivity is 10 ^-2 S / cm or higher, a method for manufacturing a photoelectric conversion device.