JP2010073772A - Method of manufacturing semiconductor device, and heat treatment apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, and a heat treatment apparatus so that, while facilities are effectively used, the inside of a heat treatment furnace is cleaned and metal contamination in the heat treatment furnace is reduced. <P>SOLUTION: The method of manufacturing the semiconductor device includes stages of: attaching a halogen-based gas supply unit which supplies halogen-based gas to the heat treatment furnace for heat-treating a substrate; cleaning the inside of the heat treatment furnace by supplying the halogen-based gas into the heat treatment furnace from the halogen-based gas supply unit; detaching the halogen-based gas supply unit from the heat-treatment furnace after the cleaning; and heat-treating the substrate in the heat treatment furnace after detaching the halogen-based gas supply unit. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a heat treatment apparatus used for heat treatment of, for example, a semiconductor wafer and a glass substrate, and a method for manufacturing a semiconductor device.

  A member made of quartz or SiC (silicon carbide) is used as a constituent member in a processing furnace (heat treatment furnace) of a heat treatment apparatus used for oxidizing or annealing a substrate such as a silicon wafer. For example, a technique is known in which members such as a reaction tube, a boat, a gas introduction nozzle, and a heat insulating plate are made of SiC in order to enable processing at a high temperature of 1200 ° C. or higher (see, for example, Patent Document 1).

  However, in the heat treatment apparatus as described above, the inside of the processing furnace is, for example, iron at the initial stage of the start-up of the apparatus due to, for example, the carry-in of the in-furnace component member into the apparatus or the purity of the member itself. It may be contaminated with metal elements such as element (Fe) and nickel element (Ni), and it may take time to start production. As a measure for reducing metal contamination, a technique for reducing metal contamination by supplying a halogen-based gas into the processing furnace and cleaning the inside of the processing furnace is known (for example, see Patent Document 2).

JP 2006-32386 A JP-A-9-97767

  However, when a halogen-based gas is not used for production, there is a specification in which the heat treatment apparatus does not include a supply unit for supplying a halogen-based gas. In this case, the inside of the processing furnace using the halogen-based gas cannot be cleaned. In addition, even if the heat treatment apparatus has a specification including a supply unit for supplying a halogen-based gas, in order to reduce cleaning in the processing furnace and contamination of SiC members when the halogen-based gas is not used for production, Other than using the supply unit, there is a problem that the supply unit is not used and the equipment may be wasted.

  An object of the present invention is to provide a semiconductor device manufacturing method and a heat treatment apparatus capable of cleaning the inside of the heat treatment furnace while effectively utilizing the facilities, and reducing metal contamination in the heat treatment furnace. It is in.

  According to one aspect of the present invention, a step of attaching a halogen-based gas supply unit that supplies a halogen-based gas to a heat treatment furnace that heat-treats a substrate, and a halogen-based gas is supplied from the halogen-based gas supply unit into the heat treatment furnace. Cleaning the inside of the heat treatment furnace, removing the halogen-based gas supply unit from the heat-treatment furnace after the cleaning, and removing the halogen-based gas supply unit and then heat-treating the substrate in the heat treatment furnace A method for manufacturing a semiconductor device is provided.

  According to another aspect of the present invention, a step of attaching a halogen-based gas supply unit for supplying a halogen-based gas and a detoxifying unit for removing harmful components of the gas to a heat treatment furnace for heat-treating the substrate, and the halogen-based gas supply Supplying a halogen-based gas from the unit into the heat treatment furnace, exhausting the gas in the heat treatment furnace through the detoxification unit, and cleaning the inside of the heat treatment furnace; after the cleaning, from the heat treatment furnace A semiconductor device comprising: removing the halogen-based gas supply unit and the detoxification unit; and removing the halogen-based gas supply unit and the detoxification unit and then heat-treating the substrate in the heat treatment furnace. A manufacturing method is provided.

  According to still another aspect of the present invention, a heat treatment furnace for heat treating the substrate, a gas supply unit for supplying gas into the heat treatment furnace, an exhaust unit for exhausting the heat treatment furnace, and cleaning the inside of the heat treatment furnace A halogen-based gas supply unit for supplying a halogen-based gas into the heat treatment furnace is attached to the substrate, and a halogen-based gas supply unit is attached to the substrate when the substrate is heat-treated. And a heat treatment apparatus having a portion.

  According to still another aspect of the present invention, a heat treatment furnace for heat treating the substrate, a gas supply unit for supplying gas into the heat treatment furnace, an exhaust unit for exhausting the heat treatment furnace, and cleaning the inside of the heat treatment furnace A halogen-based gas supply unit for supplying a halogen-based gas into the heat treatment furnace is attached to the substrate, and a halogen-based gas supply unit is attached to the substrate when the substrate is heat-treated. And a detoxification unit mounting part for removing harmful components of the exhaust gas when cleaning the inside of the heat treatment furnace, and removing the decontamination unit for closing when the substrate is heat-treated Is provided.

  According to the present invention, it is possible to provide a semiconductor device manufacturing method and a heat treatment apparatus that can clean the inside of the heat treatment furnace while effectively utilizing the facilities, and can reduce metal contamination in the heat treatment furnace. Can do.

Next, embodiments of the present invention will be described with reference to the drawings.
FIG. 1 shows a heat treatment apparatus 10 according to the first embodiment of the present invention, a halogen-based gas supply apparatus 200 used as a halogen-based gas supply unit connected to the heat treatment apparatus 10, and the heat treatment apparatus 10. An abatement apparatus 300 that is used in connection and used as an abatement unit is shown.

  The heat treatment apparatus 10 is a batch type vertical heat treatment apparatus, and includes a casing 12 in which a main part is arranged. A pod stage 14 is connected to the front side of the housing 12, and the pod 16 is conveyed to the pod stage 14. For example, 25 substrates (wafers) 54 (see FIG. 2) are stored in the pod 16 and set on the pod stage 14 with a lid (not shown) closed.

  A pod transfer device 18 is disposed on the front side in the housing 12 and at a position facing the pod stage 14. Further, a pod shelf 20, a pod opener 22, and a substrate number detector 24 are arranged in the vicinity of the pod transfer device 18. The pod shelf 20 is disposed above the pod opener 22, and the substrate number detector 24 is disposed adjacent to the pod opener 22. The pod carrying device 18 carries the pod 16 among the pod stage 14, the pod shelf 20, and the pod opener 22. The pod opener 22 opens the lid of the pod 16, and the number of substrates 54 in the pod 16 with the lid opened is detected by the substrate number detector 24.

  Further, a substrate transfer machine 26, a notch aligner 28, and a support tool (boat) 30 are disposed in the housing 12. The substrate transfer machine 26 has an arm (tweezer) 32 that can take out, for example, five substrates 54. By moving this arm 32, a pod placed at the position of the pod opener 22, a notch aligner 28, and The substrate 54 is transferred between the supports 30. The notch aligner 28 detects notches or orientation flats formed on the substrate 54 and aligns the notches or orientation flats of the substrate 54 at a certain position.

  Furthermore, a reaction furnace 40 used as a heat treatment furnace is disposed in the upper part on the back side in the housing 12. The support 30 loaded with a plurality of substrates 54 is carried into the reaction furnace 40 and subjected to heat treatment.

  The halogen-based gas supply apparatus 200 is installed and used so that the heat treatment apparatus 10 is fixed to the factory equipment or the like, but can be moved in the factory equipment or the like. Connection of the halogen-based gas supply apparatus 200 and the heat treatment apparatus 10 and release of the connection will be described later.

  The abatement apparatus 300 can be moved in factory facilities and the like, similar to the heat treatment apparatus 10. Connection of the abatement apparatus 300 and the heat treatment apparatus 10 and release of the connection will be described later.

FIG. 2 shows an example of the reaction furnace 40.
The reaction furnace 40 has a reaction tube 42 made of silicon carbide (SiC). The reaction tube 42 has a cylindrical shape in which the upper end is closed and the lower end is opened, and the opened lower end is formed in a flange shape. A quartz adapter 44 is disposed below the reaction tube 42 so as to support the reaction tube 42. The adapter 44 has a cylindrical shape with an open upper end and a lower end, and the open upper end and the lower end are formed in a flange shape. The lower surface of the lower end flange of the reaction tube 42 is in contact with the upper surface of the upper end flange of the adapter 44. A reaction vessel 43 is formed by the reaction tube 42 and the adapter 44. A heater 46 is disposed around the reaction tube 42 excluding the adapter 44 in the reaction vessel 43.

  The lower part of the reaction vessel 43 formed by the reaction tube 42 and the adapter 44 is opened to insert the support 30, and this open part (furnace port part) is an adapter with the furnace port seal cap 48 sandwiching the O-ring. It is made to seal by contacting the lower surface of the lower end flange of 44. The furnace port seal cap 48 supports the support tool 30 via a support tool receiver 53 as a support tool receiving member, and is provided so as to be movable up and down together with the support tool 30. Between the furnace port seal cap 48 and the support 30, there is a first heat insulating member 52 made of quartz and a second heat insulating member 50 made of SiC disposed on the upper portion of the first heat insulating member 52. Is provided. The support 30 is made of SiC, supports a large number of, for example, 25 to 100 substrates 54 in a substantially horizontal state with a plurality of gaps, and is loaded into the reaction tube 42.

  In order to enable processing at a high temperature of 1200 ° C. or higher, the reaction tube 42 is made of SiC. When this SiC reaction tube 42 is extended to the furnace port portion, and this furnace port portion is sealed with a furnace port seal cap via an O-ring, the seal portion is sealed by the heat transmitted through the SiC reaction tube. The O-ring that is a sealing material may be melted. If the seal part of the reaction tube 42 made of SiC is cooled so as not to melt the O-ring, the reaction tube 42 made of SiC is damaged due to a difference in thermal expansion due to a temperature difference. In view of this, the heating region by the heater 46 of the reaction vessel 43 is configured by the SiC reaction tube 42, and the portion outside the heating region by the heater 46 is configured by the quartz adapter 44, whereby the SiC reaction tube 42 is formed. It is possible to soften the transfer of heat from the furnace and seal the furnace port without melting the O-ring and damaging the reaction tube 42. Further, if the seal between the SiC reaction tube 42 and the quartz adapter 44 is improved in both surface accuracy, a temperature difference occurs because the SiC reaction tube 42 is disposed in the heating region of the heater 46. Without thermal expansion. Therefore, the flange portion at the lower end of the reaction tube 42 made of SiC can be kept flat, and no gap is formed between the adapter 44 and the sealing property can be obtained simply by placing the reaction tube 42 made of SiC on the adapter 44 made of quartz. Can be secured.

  The adapter 44 is provided with a gas supply port 56 and a gas exhaust port 59 integrally with the adapter 44. A gas supply pipe 60 used as a gas supply unit is connected to the gas supply port 56 so as to be sealed using an O-ring 80. Further, an exhaust pipe 62 used as an exhaust part is connected to the gas exhaust port 59 so as to be sealed using an O-ring 82.

  The inner wall of the adapter 44 is on the inner side (projects) from the inner wall of the reaction tube 42, and the side wall (thick part) of the adapter 44 communicates with the gas supply port 56, and the gas introduction path 64 extends in the vertical direction. The nozzle mounting hole is provided in the upper part so as to open upward. The nozzle mounting hole is opened on the upper surface of the adapter 44 on the upper end flange side inside the reaction tube 42 and communicates with the gas supply port 56 and the gas introduction path 64. A SiC nozzle 66 is inserted and fixed in the nozzle mounting hole. That is, the nozzle 66 is connected to the upper surface of the portion of the adapter 44 that protrudes inward from the inner wall of the reaction tube 42 in the reaction tube 42, and the nozzle 66 is supported by the upper surface of the adapter 44. With this configuration, the nozzle connection portion is not easily deformed by heat and is not easily damaged. Further, there is an advantage that the assembly and disassembly of the nozzle 66 and the adapter 44 are facilitated. The processing gas introduced from the gas supply pipe 60 to the gas supply port 56 is supplied into the reaction tube 42 through the gas introduction path 64 and the nozzle 66 provided in the side wall portion of the adapter 44. The nozzle 66 is configured to extend along the inner wall of the reaction tube 42 above the upper end of the substrate arrangement region, that is, above the upper end of the support 30.

  Thus, in the region where the substrate 54 in the reaction furnace 40 of the heat treatment apparatus 10 is heat treated, a member 72 made of SiC (for example, the reaction tube 42, the support tool 30, the support tool receiver 53, the second heat insulating member 50, and the like) Nozzle 66 or the like).

The gas supply pipe 60 is formed with a first opening 90 and a second opening 92 used as a halogen-based gas supply unit mounting portion.
A first closing member 94 used for closing the first opening 90 is detachably attached to the first opening 90 so as to be sealed using the O-ring 100. By attaching the first closing member 94, the first opening 90 is closed, and by removing the first closing member 94, the first opening 90 is opened and gas can be supplied from the outside. .
A second closing member 96 is detachably attached to the second opening 92. By attaching the second closing member 96, the second opening 92 is closed, and by removing the second closing member 96, the second opening is opened and gas can be supplied from the outside.

The exhaust pipe 62 is formed with a third opening 114 and a fourth opening 116 used as an abatement unit attaching part.
A third closing member 98 used for closing the third opening 114 is detachably attached to the third opening 114 so as to be sealed using the O-ring 102. By attaching the third closing member 98, the third opening 114 is closed, and by removing the third closing member 98, the third opening 114 is opened and gas can be discharged to the outside.
A facility-side exhaust pipe 500 to be described later is connected to the fourth opening 116 so as to be sealed using an O-ring 122. Moreover, the 4th opening part 116 can remove the equipment side exhaust pipe 500, and can attach a closure member (not shown) here now. By attaching the closing member, the fourth opening 116 is closed, and by connecting to the equipment side exhaust pipe 500, the exhaust from the fourth opening 116 to the factory exhaust facility is brought about.

Next, a method for processing a substrate as one step of a semiconductor device manufacturing process using the heat treatment apparatus 10 configured as described above will be described.
In the following description, the operation of each part constituting the substrate processing apparatus is controlled by the heat treatment apparatus controller 70.

  First, when the pod 16 containing a plurality of substrates 54 is set on the pod stage 14, the pod 16 is transferred from the pod stage 14 to the pod shelf 20 by the pod transfer device 18 and stocked on the pod shelf 20. Next, the pod 16 stocked on the pod shelf 20 is transported and set to the pod opener 22 by the pod transport device 18, the lid of the pod 16 is opened by the pod opener 22, and the pod 16 is detected by the substrate number detector 24. The number of substrates 54 accommodated in is detected.

  Next, the substrate transfer machine 26 takes out the substrate 54 from the pod 16 at the position of the pod opener 22 and transfers it to the notch aligner 28. In the notch aligner 28, the notch is detected while rotating the substrate 54, and the notches of the plurality of substrates 54 are aligned at the same position based on the detected information. Next, the substrate transfer machine 26 takes out the substrate 54 from the notch aligner 28 and transfers it to the support 30.

In this way, when one batch of the substrates 54 is transferred to the support 30, for example, the support having a plurality of substrates 54 loaded in the reaction furnace 40 (reaction vessel 43) set to a temperature of about 600 ° C. 30 is charged, and the inside of the reaction furnace 40 is sealed with a furnace port seal cap 48. Next, the furnace temperature is raised to the heat treatment temperature, and the treatment is performed in the reaction tube 42 from the gas supply pipe 60 through the gas supply port 56, the gas introduction path 64 provided in the side wall of the adapter 44, and the nozzle 66. Introduce gas. The processing gas includes nitrogen (N ₂ ), argon (Ar), hydrogen (H ₂ ), oxygen (O ₂ ), and the like. When the substrate 54 is heat-treated, the substrate 54 is heated to a temperature of, for example, about 1200 ° C. or higher.

  When the heat treatment of the substrate 54 is completed, for example, the temperature in the furnace is lowered to a temperature of about 600 ° C., and then the support tool 30 supporting the substrate 54 after the heat treatment is unloaded from the reaction furnace 40 and supported by the support tool 30. The support 30 is kept in a predetermined position until all the substrates 54 are cooled. Next, when the substrate 54 of the support tool 30 that has been put on standby is cooled to a predetermined temperature, the substrate transfer machine 26 takes out the substrate 54 from the support tool 30 and puts it into the empty pod 16 set on the pod opener 22. Transport and store. Next, the pod carrying device 18 carries the pod 16 containing the substrate 54 to the pod shelf 20 or the pod stage 14 to complete a series of processes.

FIG. 3 shows a first example of the halogen-based gas supply device 200.
The halogen-based gas supply device 200 is used to supply a halogen-based gas to the heat treatment apparatus 10 and has a housing 202. A caster 204 used as a movement assisting unit is attached to the outside of the bottom of the housing 202. The caster 204 is attached to facilitate the movement of the halogen-based gas supply device 200 in the factory facility.

  The casing 202 can accommodate and fix a gas cylinder 206 used as a gas storage means. The gas cylinder 206 is filled with HCl (hydrogen chloride) gas. The gas cylinder 206 is detachable from the housing 202, and can be removed from the housing 202 when, for example, the filled gas is exhausted. For example, a new gas cylinder filled with gas is stored in the housing 202. Be able to.

  The gas cylinder 206 includes a discharge unit 208 that discharges HCl gas, and a handle 210 that is used as an operation unit.

  In addition, a halogen-based gas supply pipe 212 whose one end side can be connected to the discharge unit 208 of the gas cylinder 206 and whose multi-end side protrudes from the casing 202 is attached to the casing 202. An air valve 220, a mass flow controller 222, and an air valve 224 are attached to a portion of the halogen-based gas supply pipe 212 located in the housing 202 in order from the gas cylinder 206 side. In addition, a hand valve 226 used as an operation unit is provided at a portion of the halogen-based gas supply pipe 212 that protrudes from the housing 202. The hand valve 226 is directly operated by an operator, and when the hand valve 226 is opened, the halogen-based gas can be supplied, and when the hand valve 226 is closed, the halogen-based gas is not supplied. A joint 228 used as a connection portion is provided at the end of the halogen-based gas supply pipe 212. The halogen-based gas supply pipe 212 is configured to be connected to the first opening 90 of the gas supply pipe 60 of the heat treatment apparatus 10 through the joint 228.

A supply device controller 240 is mounted in the housing 202.
The supply device controller 240 is input from the heat treatment device controller 70, and the air valve 220, the mass flow controller 222, and the air valve 224 are controlled by the output from the supply device controller 240. More specifically, the supply device controller 240 controls the air valve 220, the mass flow controller 222, and the air valve 224 to start and stop the supply of the halogen-based gas from the halogen-based gas supply device 200. When supplying the gas, the flow rate of the halogen-based gas to be supplied is adjusted.

FIG. 4 shows a second example of the halogen-based gas supply device 200.
The halogen-based gas supply device of the first example described above is configured to supply HCl gas that is a gas at room temperature, whereas the second halogen-based gas supply device 200 includes a liquid source, That is, DCE (dichloroethylene (C ₂ H ₂ Cl ₂ )), which is a liquid at normal temperature, is vaporized by bubbling, and the vaporized gas is supplied.

  The housing 202 of the halogen-based gas supply apparatus 200 of the second example is configured to accommodate and fix a tank 250 used as a liquid source storage unit. The tank 250 can be attached to and detached from the housing 202. A caster 204 is attached to the outside of the bottom portion of the casing 202, as in the first example described above. The caster 204 is attached to facilitate the movement of the halogen-based gas supply device 200 in the factory facility.

In addition, a gas introduction pipe 252 and a halogen-based gas supply pipe 254 are attached to the housing 202.
The end of the gas introduction pipe 252 on the side disposed inside the housing 202 is inserted into the tank 250 and is configured to be positioned below the liquid level of DCE stored in the tank 250. A joint 256 used as a connection portion is provided at the end of the gas introduction pipe 252 on the side disposed on the outer side of the housing 202. The gas introduction pipe 252 can be connected to a gas supply device 400 (see FIG. 6) provided on the factory equipment side, which will be described later, via a joint 256. An inert gas such as N ₂ (nitrogen) gas, Ar (argon) gas, and He (helium) gas is supplied.

  An air valve 258 and a hand valve 260 used as an operation unit are attached to the gas introduction pipe 252. The hand valve 260 is directly operated by the operator, and the supply of the inert gas into the tank 250 can be started and stopped by opening and closing the hand valve 260.

  The end of the halogen-based gas supply pipe 254 on the side disposed inside the housing 202 is inserted into the tank 250 so that it does not reach the liquid level of DCE stored in the tank 250. Further, a joint 262 is provided at the end of the halogen-based gas supply pipe 254 on the side disposed on the outer side of the housing 202. The halogen-based gas supply pipe 254 is configured so as to be connected to the first opening 90 of the gas supply pipe 60 of the heat treatment apparatus 10 through the joint 256, and from the tank 250 to the reaction furnace 40. A halogen-based gas vaporized by bubbling can be supplied. The halogen-based gas supply pipe 254 is provided with an air valve 264 and a hand valve 266 used as an operation unit in order from the tank 250 side.

  In addition, a bypass pipe 270 used as a communication portion that connects the gas introduction pipe 252 and the halogen-based gas supply pipe 254 is provided between the gas introduction pipe 252 and the halogen-based gas supply pipe 254. An air valve 272 is provided in the bypass pipe 270.

A supply device controller 240 is mounted in the housing 202.
The supply device controller 240 is input from the heat treatment device controller 70, and the air valve 258, the air valve 264, and the air valve 272 are controlled by the output from the supply device controller 240. More specifically, the supply device controller 240 controls the air valve 258, the air valve 264, and the air valve 272 to supply an inert gas into the tank 250 of the halogen-based gas supply device 200 or not into the tank 250. Bypass without supplying active gas, whether to supply into the reaction furnace 40 through the halogen-based gas supply pipe 254, whether to supply halogen-based gas into the reaction furnace 40, or halogen-based gas into the reaction furnace 40 The operation of whether to stop the supply of.

FIG. 5 shows an example of the abatement apparatus 300.
The detoxifying device 300 is used for detoxifying and detoxifying the gas discharged from the heat treatment apparatus 10 before discharging to a facility-side exhaust pipe 500 (see FIG. 6) described later. The abatement apparatus 300 has a housing 302, and a caster 304 used as a movement assisting unit is attached to the outside of the bottom of the housing 302. The caster 304 is attached to facilitate the movement of the abatement apparatus 300 in the factory facility.

  The casing 302 is provided with a detoxification cartridge 306 that is detachable and can be replaced at the end of its lifetime, for example. The detoxification cartridge 306 detoxifies and discharges harmful substances contained in the introduced gas, for example, by adsorbing them with adsorbing substances.

In addition, a gas introduction pipe 310 and a gas discharge pipe 312 are attached to the housing 302.
The end of the gas introduction pipe 310 on the side disposed inside the housing 302 is connected to the abatement cartridge 306. A joint 320 is provided at an end of the gas introduction pipe 310 on the side disposed outside the housing 302. The gas introduction pipe 310 is configured to be connected to the third opening 114 or the gas exhaust port 59 of the exhaust pipe 62 of the heat treatment apparatus 10 through the joint 320 and is exhausted from the reaction furnace 40. Gas to be detoxified is introduced. That is, the gas discharged from the exhaust pipe 62 or the gas exhaust port 59 of the heat treatment apparatus 10 (see FIG. 2) is introduced.

  In addition, an air valve 330 and a hand valve 332 used as an operation unit are attached to the gas introduction pipe 310. The hand valve 332 is directly operated by an operator, and by operating the hand valve 332, supply of exhaust gas into the abatement cartridge 306 can be started or stopped. .

  The end of the gas discharge pipe 312 on the side disposed inside the housing 302 is connected to the abatement cartridge 306. Further, a joint 322 is provided at the end of the gas discharge pipe 312 on the side disposed outside the housing 302. The gas discharge pipe 312 is configured to be connected to the facility-side exhaust pipe 500 via the joint 322 so that the gas removed by the removal cartridge 306 can be discharged to the facility-side exhaust pipe 500. It has become. The gas discharge pipe 312 is provided with an air valve 334 and a hand valve 336 used as an operation unit in order from the side of the detoxification cartridge 306.

  Further, a bypass pipe 340 is provided between the gas introduction pipe 310 and the gas discharge pipe 312 and used as a communication portion that communicates the gas introduction pipe 310 and the gas discharge pipe 312. An air valve 342 is provided in the bypass pipe 340.

In addition, a detoxifying device controller 360 is mounted in the housing 302.
The abatement apparatus controller 360 is input from the heat treatment apparatus controller 70, and the air valve 330, the air valve 334, and the air valve 342 are controlled by the output from the abatement apparatus controller 360. More specifically, the abatement apparatus controller 360 controls the air valve 330, the air valve 334, and the air valve 342 to detoxify the exhaust gas supplied to the abatement apparatus 300 and discharge the exhaust gas to the equipment side exhaust pipe 500. Or, without detoxifying, the detoxifying cartridge is bypassed and discharged to the facility side exhaust pipe 500.

FIG. 6 schematically shows a state in which the heat treatment apparatus 10, the halogen-based gas supply apparatus 200, and the abatement apparatus 300 are arranged in a factory facility and connected to each other.
In the example shown in FIG. 6, the two heat treatment apparatuses 10 and 10 are arranged so as to be fixed in the factory facility. A halogen-based gas supply device 200 and a detoxification device 300 are connected to one of the two heat treatment apparatuses 10. As the halogen-based gas supply device 200, a type that vaporizes and supplies DCE described as the second example is used.

The heat treatment apparatus 10 is provided with a gas supply apparatus 400. Gas supply apparatus, Ar (argon) _{N 2} used in the supply of the Ar gas supply unit 402, _{O 2} (oxygen) _{O 2} gas supply unit 404 used for the supply of gas, and _{N 2} gas used in the supply of gas A gas supply unit 406 is provided.

The Ar gas supply unit 402 is connected to an Ar gas supply source, and has an Ar gas supply pipe 412 provided with a valve 408 and a mass flow controller 410 in order from the upstream side. The O ₂ gas supply unit 404 is connected to an O ₂ gas supply source, and has an O ₂ gas supply pipe 418 provided with a valve 414 and a mass flow controller 416 in order from the upstream side. The N ₂ gas supply unit 406 is connected to an N ₂ gas supply source and includes an N ₂ gas supply pipe 424 provided with a valve 420 and a mass flow controller 422 in order from the upstream side.
A second supply pipe 432 is connected upstream of the valve 420 of the N ₂ gas supply pipe 424. The second supply pipe 432 is provided with a valve 434 and a mass flow controller 436. Further, the downstream ends of the Ar gas supply pipe 412, the O ₂ gas supply pipe 418, and the N ₂ gas supply pipe 424 are connected to the first supply pipe 430, respectively. A gas supply system that supplies a gas used for heat treatment of the substrate 54 is mainly configured by the gas supply device 400 and the first supply pipe 430.

  In addition, an equipment side exhaust pipe 500 is provided in the factory equipment. A facility-side abatement device 502 is attached to the facility-side exhaust pipe 500, and after the facility-side abatement device 502 performs the detoxification, the gas is exhausted outside the factory facility.

The gas supply apparatus 400 is controlled by a heat treatment apparatus controller 70 included in the heat treatment apparatus 10. More specifically, the heat treatment apparatus controller 70 is connected with a valve 408, a mass flow controller 410, a valve 414, a mass flow controller 416, a valve 420, a mass flow controller 422, a valve 434, and a mass flow controller 436, and these members. By controlling the above, the heat treatment apparatus controller 70 supplies at least one of Ar gas, O ₂ gas, and N ₂ gas from the first supply pipe 430, or N ₂ from the second supply pipe 432. Or supply gas.

  The heat treatment apparatus controller 70 included in the heat treatment apparatus 10 is connected to the supply apparatus controller 240 included in the halogen-based gas supply apparatus 200 and the decontamination apparatus controller 360 included in the abatement apparatus 300. The apparatus 200 and the abatement apparatus 300 are controlled.

  The first supply pipe 430 is connected to the second opening 92 (see FIG. 2) of the gas supply pipe 60 of the heat treatment apparatus 10 via a joint 431. The second supply pipe 432 is connected to a gas introduction pipe 252 included in the halogen-based gas supply apparatus 200 via a joint 256. The halogen-based gas supply pipe 254 included in the halogen-based gas supply apparatus 200 is connected to the first opening 90 of the gas supply pipe 60 included in the heat treatment apparatus 10 via a joint 262.

  Regarding the connection between the heat treatment apparatus 10 and the abatement apparatus 300, the gas introduction pipe 310 included in the abatement apparatus 300 is connected to the third opening 114 formed in the exhaust pipe 62 of the heat treatment apparatus 10 through the joint 320. Is done. Note that the gas introduction pipe 310 of the abatement apparatus 300 may be directly connected to the gas exhaust port 59 of the heat treatment apparatus 10. Further, the gas discharge pipe 312 of the abatement apparatus 300 is connected to the equipment side exhaust pipe 500 via a joint 322. The halogen-based gas supply pipe 254 and the gas introduction pipe 310 are connected by a vent pipe 510, and the vent pipe 510 is provided with a valve 512.

  In the arrangement shown in FIG. 6, the halogen-based gas supply device 200 and the abatement device 300 can be moved in the factory facility, respectively, for example, moved to the position indicated by the two-dot chain line, and two heat treatment devices Can be reconnected to the other. Therefore, it is not necessary to prepare the same number of halogen-based gas supply devices 200 and abatement devices 300 as the number of the plurality of heat treatment devices 10, and the number of halogen-based gas supply devices 200 and the abatement devices 300 is larger than that of the heat treatment devices 10. Less Although FIG. 6 shows an example in which two heat treatment apparatuses 10 are arranged, three or more heat treatment apparatuses 10 may be provided. In FIG. 6, for convenience of illustration, the gas supply device 400 and the first supply pipe 430 are only connected to only the heat treatment device 10 located on the left side of the two heat treatment devices 10 and 10 in the drawing. Although shown, the gas supply device 400 and the first supply pipe 430 are connected to all of the plurality of heat treatment devices 10.

  In the arrangement shown in FIG. 6, the abatement apparatus 300 is connected to the exhaust pipe 62 of the heat treatment apparatus 10, and the gas detoxified by the abatement apparatus 300 is connected to the equipment-side exhaust pipe 500 and the equipment-side abatement. However, instead of connecting the abatement apparatus 300 to the heat treatment apparatus 10, the gas is exhausted directly from the exhaust pipe 62 to the equipment side exhaust pipe 500. You may make it do. Even if the detoxifying device 300 is not provided, the gas exhausted from the heat treatment device 10 is exhausted out of the facility after being detoxified by the facility-side detoxifying device 502.

  However, when the facility-side abatement apparatus 502 is not provided in the factory facility, the abatement apparatus 300 is connected to the heat treatment apparatus 10 as shown in FIG. It takes a thing.

FIG. 7 and FIG. 8 illustrate an example of a procedure (process) until the heat treatment apparatus 10 is installed in factory equipment and actual production is started.
As shown in FIG. 7, generally, the heater 46 is first baked as the first step S100. Then, as the next step S200, the temperature in the reactor 40 is measured and tuned. Then, as the next step S300, gas is discharged into the reaction furnace 40 and a leak check in the reaction furnace 40 is performed. Then, in the next step S400, the inside of the reaction furnace 40 is cleaned using, for example, a halogen-based gas.

  In the next step S500, a metal contamination check is performed to check that no metal contamination occurs in the reaction furnace 40, and in the next step S600, a particle check is performed. Then, in the next step S700, a film is formed on the substrate, and the film thickness uniformity of the formed film is checked. If this is cleared, it is a step of actually manufacturing a semiconductor device or the like in step S800. Move on to production. That is, the heat treatment of the substrate 54 using the heat treatment apparatus 10 is started as one step of the semiconductor device manufacturing process.

  The halogen-based gas supply device 200 and the abatement device 300 are disposed in the factory equipment as shown in FIG. 6 and attached to the heat treatment device 10 in the cleaning step in step S400. And it removes from the heat processing apparatus 10 by the time of production of process S800.

  The cleaning process of step S400 will be described more specifically. As shown in FIG. 8, as a preparation for cleaning, in step S410, the first closing member 94 is removed from the heat treatment apparatus 10 and the first opening 90 is prepared. Is opened, the second closing member 96 is removed and the opening 92 is opened, and the third closing member 98 is removed and the third opening 114 is opened.

  In the next step S <b> 412, the halogen-based gas supply device 200 and the abatement device 300 are attached to the heat treatment device 10 as preparation for cleaning. That is, the opened first opening 90 and the halogen-based gas supply pipe 254 are connected, the opened second opening 92 and the first supply pipe 430 are connected, and the opened third opening 114 is connected. A gas introduction pipe 310 is connected. Further, the gas introduction pipe 252 and the second supply pipe 432 are connected.

In the next step S414, the halogen-based gas is introduced into the reaction furnace 40, and the reaction tube 40 is cleaned. That is, the halogen-based gas from the halogen-based gas supply device 200 is introduced into the reaction furnace 40 so as to pass through the first opening 90, and the halogen-based gas used for cleaning the reaction furnace 40 is the third. It passes through the opening 114 to reach the abatement device 300, and after detoxification by the abatement device 300, it is exhausted to the facility-side exhaust pipe 500. At the same time, O ₂ gas, N ₂ gas, or the like may flow through the reaction tube 40. When flowing O ₂ gas, O ₂ gas is supplied from the O ₂ gas supply unit 404 of the gas supply device 400. When N ₂ gas is allowed to flow, N ₂ gas is supplied from the N ₂ gas supply unit 406 of the gas supply device 400.

  In the next step S500, the level of metal contamination in the reaction furnace 40 is checked, and it is confirmed that the level of metal contamination has been lowered to a level that does not degrade the performance of the semiconductor device to be manufactured. Until then, the cleaning of S414 is repeated.

Then, in the next step S420, the inside of the reaction furnace 40 is purged as a post process of the cleaning process. That is, for example, N ₂ gas is supplied from the gas supply device 400 toward the reaction furnace 40 so as to pass through the second opening 92, and the reaction furnace 40 is purged. At this time, N ₂ gas is also supplied into the halogen-based gas supply device 200 at the same time, and the exhaust gas in the reaction furnace 40 is exhausted through the detoxifying device 300, thereby the halogen-based gas supply device 200. In addition, the purge in the abatement apparatus 300 is also performed.

  In the next step S422, the halogen-based gas supply device 200 and the abatement device 300 are removed from the heat treatment apparatus 10 as a post-cleaning process. That is, the connection between the first opening 90 and the halogen-based gas supply pipe 254 is released, and the connection between the third opening 114 and the gas introduction pipe 31 is released. The first supply pipe 430 serves as a supply line that constitutes a gas supply system that supplies a gas used for the heat treatment of the substrate 54. Therefore, the connection between the second opening 92 and the first supply pipe 430 is not released. Let it be as it is.

  In the next step S424, as a post-cleaning process, the first closing member 94 is attached to the heat treatment apparatus 10 to close the first opening 90, and the third closing member 98 is attached to the third process. The opening 114 is closed. The production in step S800 is performed in this state.

In the first embodiment, the case where the present invention is applied at the initial stage of starting up the apparatus has been described. However, in addition to the initial stage of starting up the apparatus, after replacement of components in the reactor such as a boat and a reaction tube, or for some other reason. The present invention can also be applied when contamination occurs in the reaction furnace.
In the first embodiment, the supply apparatus controller 240 and the heat treatment apparatus controller 70 are electrically connected, and the halogen-based gas supply apparatus 200 is controlled by the heat treatment apparatus controller 70. However, the halogen-based gas supply is described. Device 200 may be operated manually.

Next, a second embodiment of the present invention will be described.
In the first embodiment described above, when the inside of the reaction furnace 40 is cleaned, the halogen-based gas supply device 200 and the abatement device 300 are attached to the heat treatment apparatus 10 and the substrate 54 is heat treated. In the above, an example in which the halogen-based gas supply device 200 and the abatement device 300 are removed from the heat treatment device 10 has been described. On the other hand, in the second embodiment, when the surface treatment of the SiC member is performed, a water vapor supply unit (not shown) and a drain unit (not shown) are attached to the heat treatment apparatus 10 to form a substrate. An example in which the water vapor supply unit and the drain unit are removed from the heat treatment apparatus 10 when performing heat treatment on 54 will be described.

  In the second embodiment of the present invention, before the processing of the substrate 54 is started, the surface of the member 72 made of SiC is oxidized to form an oxide film, and the oxide film is removed by etching. A treatment for removing contamination (metal contamination layer) with a metal element of 1 to 2 μm from the surface of the substrate is performed. That is, the second embodiment of the present invention includes a first step of oxidizing the surface of a SiC member to form an oxide film, and a second step of etching the oxide film by wet etching or the like. .

  Then, when forming the oxide film in the first step, the water vapor supply unit and the drain unit are attached to the heat treatment apparatus 10. Thereafter, the water vapor supply unit and the drain unit are removed from the heat treatment apparatus 10. Here, the water vapor supply unit includes, for example, a water supply device such as an external combustion device or a vaporizer, and if the same number of heat treatment devices 10 as the heat treatment devices 10 are prepared, the water vapor supply is caused. If the unit is detachable from the heat treatment apparatus 10, it is not always necessary to prepare the same number of water vapor generation units as the heat treatment apparatus, and the cost can be reduced.

  Hereinafter, processes until the substrate is heat-treated using the heat treatment apparatus 10 according to the second embodiment of the present invention will be described with reference to FIG.

FIG. 9 illustrates an example of a procedure (process) until the heat treatment apparatus 10 is installed in factory equipment and actual production is started.
As shown in FIG. 9, first, a member 72 made of SiC is attached in the reaction furnace 40 in the first step S1002.

  In the next step S1004, the first closing member 94, the second closing member 96, and the third closing member 98 are removed.

  In the next step S1006, the water vapor supply unit and the drain unit are respectively attached to the first opening 90 and the third opening 114 formed by removing the first closing member 94 and the third closing member 98. The first supply pipe 430 is connected to the second opening 92 formed by removing the second closing member 96.

  In the next step S1008, water vapor is supplied from the water vapor supply unit into the reaction furnace 40, the surface of the member 72 is oxidized, and an oxide film is formed on the surface of the member 72. The water vapor supplied into the reaction furnace 40 is exhausted through the drain unit. In step S1010, it is determined whether the thickness of the oxide film formed on the surface of the member 72 has reached a predetermined thickness, and the member 72 is oxidized until the predetermined thickness is achieved.

  In the next step S1012, the heat treatment apparatus 10, the water vapor supply unit, and the drain unit are purged.

  In the next step S1014, the water vapor unit and the drain unit are removed from the heat treatment apparatus 10.

  In the next step S1016, the first closing member 94 and the third closing member 98 are attached to the heat treatment apparatus 10, and the first opening 90 and the third opening 114 are closed.

  In the next step S1018, the member 72 on which the oxide film is formed is removed from the reaction furnace 40.

  In the next step S1020, the removed member 72 is wet etched. By performing the wet etching, the oxide film is removed from the member 72, and the metal contamination layer is removed.

  In the next step S1022, the member 72 made of SiC from which the oxide film has been removed is attached to the reaction furnace 40 again. Thereafter, the substrate 54 is heat-treated by the heat treatment apparatus 10.

  Hereinafter, preferred embodiments of the present invention will be additionally described.

(1)
Attaching a halogen-based gas supply unit for supplying a halogen-based gas to a heat treatment furnace for heat-treating the substrate;
Supplying a halogen-based gas from the halogen-based gas supply unit into the heat treatment furnace to clean the inside of the heat treatment furnace;
Removing the halogen-based gas supply unit from the heat treatment furnace after the cleaning;
A step of heat treating the substrate in the heat treatment furnace after removing the halogen-based gas supply unit;
A method for manufacturing a semiconductor device, comprising:

(2)
Attaching a halogen-based gas supply unit for supplying a halogen-based gas and a detoxifying unit for removing harmful components of the gas to a heat treatment furnace for heat-treating the substrate;
Supplying a halogen-based gas into the heat treatment furnace from the halogen-based gas supply unit, exhausting the gas in the heat treatment furnace through the detoxification unit, and cleaning the inside of the heat treatment furnace;
Removing the halogen-based gas supply unit and the detoxification unit from the heat treatment furnace after the cleaning;
A step of heat treating the substrate in the heat treatment furnace after removing the halogen-based gas supply unit and the abatement unit;
A method for manufacturing a semiconductor device, comprising:

(3)
A heat treatment furnace for heat treating the substrate;
A gas supply unit for supplying gas into the heat treatment furnace;
An exhaust section for exhausting the heat treatment furnace;
When cleaning the inside of the heat treatment furnace, a halogen type gas supply unit for supplying a halogen type gas to the heat treatment furnace is attached, and when the substrate is heat treated, the halogen type gas supply unit is removed and closed. A halogen-based gas supply unit mounting portion;
The heat processing apparatus characterized by having.

(4)
A heat treatment furnace for heat treating the substrate;
A gas supply unit for supplying gas into the heat treatment furnace;
An exhaust section for exhausting the heat treatment furnace;
When cleaning the inside of the heat treatment furnace, a halogen type gas supply unit for supplying a halogen type gas to the heat treatment furnace is attached, and when the substrate is heat treated, the halogen type gas supply unit is removed and closed. A halogen-based gas supply unit mounting portion;
A detoxification unit that removes harmful components of exhaust gas is attached when cleaning the inside of the heat treatment furnace, and a detoxification unit attachment part that is removed and closed when the substrate is heat-treated,
The heat processing apparatus characterized by having.

(5)
The method of manufacturing a semiconductor device according to (1), wherein the halogen-based gas supply unit is attached to a gas supply unit that supplies a gas for heat treatment into the heat treatment furnace.

(6)
The halogen-based gas supply unit is attached to a gas supply unit that supplies a heat treatment gas into the heat treatment furnace, and the abatement unit is attached to an exhaust unit that exhausts the heat treatment furnace. (2) A method for manufacturing a semiconductor device according to (2).

(7)
The heat treatment apparatus according to (3), wherein the halogen-based gas supply unit mounting portion is provided in the gas supply portion.

(8)
(4) The heat treatment apparatus according to (4), wherein the halogen-based gas supply unit attachment portion is provided in the gas supply portion, and the abatement unit attachment portion is provided in the exhaust portion.

(9)
The said halogen-type gas supply unit is a manufacturing method / heat processing apparatus of the semiconductor device in any one of (5)-(8) which comprises the gas cylinder which accommodates halogen-type gas.

(10)
The halogen-based gas supply unit includes a tank that stores a halogen liquid source that is liquid at room temperature, and a vaporization unit that vaporizes the halogen liquid source to obtain a halogen-based gas. (5) to (8) A manufacturing method / heat treatment apparatus for a semiconductor device according to any one of the above.

(11)
The halogen-based gas supply unit receives an inert gas supplied from the gas supply unit, and supplies the halogen-based gas and the inert gas into the heat treatment furnace in a mixed state (5) to (8) A manufacturing method / heat treatment apparatus for a semiconductor device according to claim 1.

(12)
The semiconductor device manufacturing method / heat treatment apparatus according to any one of (5) to (8), wherein hydrogen chloride gas is allowed to flow as a halogen-based gas from the halogen-based gas supply unit.

(13)
The semiconductor device manufacturing method / heat treatment apparatus according to any one of (5) to (8), wherein hydrogen chloride gas is allowed to flow as a halogen-based gas from the halogen-based gas supply unit, and an inert gas is allowed to flow from the gas supply unit.

(14)
The semiconductor device manufacturing method / heat treatment apparatus according to any one of (5) to (8), wherein dichloroethylene gas is flowed as a halogen-based gas from the halogen-based gas supply unit, and oxygen gas is flowed from the gas supply unit.

(15)
The semiconductor device manufacturing method / heat treatment apparatus according to any one of (5) to (8), wherein dichloroethylene gas is allowed to flow as a halogen-based gas from the halogen-based gas supply unit, and oxygen gas and inert gas are allowed to flow from the gas supply unit. .

(16)
The semiconductor device according to (1), wherein after the halogen-based gas supply unit is removed and before the substrate is heat-treated in the heat-treatment furnace, the mounting portion of the halogen-based gas supply unit is closed with a closing member. Manufacturing method.

(17)
After removing the halogen-based gas supply unit and the abatement unit and before heat-treating the substrate in the heat-treating furnace, the mounting portion of the name unit is closed with a closing member (2) Semiconductor device manufacturing method.

(18)
The heat treatment apparatus according to (3), wherein the halogen-based gas supply unit mounting portion is provided with a closing member that closes the mounting portion after the halogen-based gas supply unit is removed.

(19)
The halogen-based gas supply unit mounting portion is provided with a closing member that closes the mounting portion after the halogen-based gas supply unit is removed, and the removal unit is removed from the removal unit mounting portion. (4) The heat treatment apparatus according to (4), wherein a closing member for closing the mounting portion is provided later.

    As described above, the present invention can be applied to, for example, a method for manufacturing a semiconductor manufacturing apparatus using a semiconductor wafer, a glass substrate, or the like, and a heat treatment apparatus.

It is a perspective view showing the whole heat treatment apparatus concerning a 1st embodiment of the present invention. It is sectional drawing which shows the reaction furnace used for the heat processing apparatus which concerns on the 1st Embodiment of this invention. It is sectional drawing which shows an example of the halogen-type gas supply apparatus used for the 1st Embodiment of this invention. It is sectional drawing which shows the other example of the halogen-type gas supply apparatus used for the 1st Embodiment of this invention. It is sectional drawing which shows an example of the abatement apparatus used for the 1st Embodiment of this invention. It is explanatory drawing explaining the state which the heat processing apparatus, the halogen-type gas supply apparatus, and the abatement apparatus are arrange | positioned in a factory installation, and are mutually connected in the 1st Embodiment of this invention. In the 1st Embodiment of this invention, it is explanatory drawing explaining the procedure until it starts the heat processing of a board | substrate using the heat processing apparatus. In the 1st Embodiment of this invention, it is 1st explanatory drawing explaining the procedure until it starts the heat processing of a board | substrate using the heat processing apparatus. In the 2nd Embodiment of this invention, it is explanatory drawing explaining the procedure until it starts the heat processing of a board | substrate using the heat processing apparatus.

DESCRIPTION OF SYMBOLS 10 Heat processing apparatus 40 Reaction furnace 54 Board | substrate 56 Gas supply port 59 Gas exhaust port 60 Gas supply pipe 62 Exhaust pipe 70 Heat processing apparatus controller 72 Member 90 1st opening part 92 2nd opening part 94 1st closing member 96 2nd closing member 98 Third sealing member 114 Third opening 200 Halogen-based gas supply device 300 Detoxification device 400 Gas supply device 500 Facility side exhaust pipe 502 Facility side detoxification device

Claims (4)

Attaching a halogen-based gas supply unit for supplying a halogen-based gas to a heat treatment furnace for heat-treating the substrate;
Supplying a halogen-based gas from the halogen-based gas supply unit into the heat treatment furnace to clean the inside of the heat treatment furnace;
Removing the halogen-based gas supply unit from the heat treatment furnace after the cleaning;
A step of heat treating the substrate in the heat treatment furnace after removing the halogen-based gas supply unit;
A method for manufacturing a semiconductor device, comprising: Attaching a halogen-based gas supply unit for supplying a halogen-based gas and a detoxifying unit for removing harmful components of the gas to a heat treatment furnace for heat-treating the substrate;
Supplying a halogen-based gas into the heat treatment furnace from the halogen-based gas supply unit, exhausting the gas in the heat treatment furnace through the detoxification unit, and cleaning the inside of the heat treatment furnace;
Removing the halogen-based gas supply unit and the detoxification unit from the heat treatment furnace after the cleaning;
A step of heat treating the substrate in the heat treatment furnace after removing the halogen-based gas supply unit and the abatement unit;
A method for manufacturing a semiconductor device, comprising: A heat treatment furnace for heat treating the substrate;
A gas supply unit for supplying gas into the heat treatment furnace;
An exhaust section for exhausting the heat treatment furnace;
When cleaning the inside of the heat treatment furnace, a halogen type gas supply unit for supplying a halogen type gas to the heat treatment furnace is attached, and when the substrate is heat treated, the halogen type gas supply unit is removed and closed. A halogen-based gas supply unit mounting portion;
The heat processing apparatus characterized by having. A heat treatment furnace for heat treating the substrate;
A gas supply unit for supplying gas into the heat treatment furnace;
An exhaust section for exhausting the heat treatment furnace;
When cleaning the inside of the heat treatment furnace, a halogen type gas supply unit for supplying a halogen type gas to the heat treatment furnace is attached, and when the substrate is heat treated, the halogen type gas supply unit is removed and closed. A halogen-based gas supply unit mounting portion;
A detoxification unit that removes harmful components of exhaust gas is attached when cleaning the inside of the heat treatment furnace, and a detoxification unit attachment portion that is removed and closed when the substrate is heat-treated,
The heat processing apparatus characterized by having.

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