JP2010067867A - Exposure method and apparatus, and method for manufacturing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To enhance productivity of a substrate by exposing first and second regions to be exposed on a first substrate in parallel with first and second regions to be exposed on a second substrate in an exposure of one time. <P>SOLUTION: In an exposure method for exposing a substrate, a first region to be exposed on a first substrate P1 and a first shot region on a second substrate P2 are exposed with first and third exposure lights EL1 and EL3, respectively, by a projection optical system PL having a synthetic optical element 20 that branches a third exposure light EL3 and a fourth exposure light EL4 from the first exposure light EL1 and the second exposure light EL2, respectively, and respective second shot regions adjacent to a first shot region on the first substrate P1 and the first shot region on the second substrate P2 are exposed with the second and fourth exposure lights EL2 and EL4, respectively, by the projection optical system PL. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to an exposure method and apparatus for exposing a substrate to form patterns for various devices (electronic devices), for example, and a device manufacturing method.

In an exposure apparatus used in a photolithography process, an exposure apparatus is proposed in which a plurality of exposure lights are combined and branched by a combining optical element, and two substrates are subjected to multiple exposure in parallel with the two branched exposure lights. (For example, refer to Patent Document 1). According to this exposure apparatus, a high throughput (productivity) can be obtained as compared with the case where exposure is performed for each substrate.
International Publication No. 2007/094470 Pamphlet

  In order to manufacture various devices (electronic devices) such as semiconductor devices at a higher throughput, the substrate is increasingly larger, and recently, a semiconductor wafer having a diameter of, for example, 450 mm has begun to be used. Since the number of shot regions (devices) in the substrate is approximately proportional to the square of the size of the substrate, when the size of the substrate is increased, the time required for exposure of one substrate is also approximately the square of the size of the substrate. It increases in proportion to. The same applies to the case where two substrates are exposed in parallel as in a conventional exposure apparatus, and it is desired to increase the productivity of the exposure process for a substrate that is particularly large.

  In view of such circumstances, an object of the present invention is to provide an exposure technique and a device manufacturing technique that can expose a substrate with higher productivity.

  The exposure method according to the present invention is an exposure method for exposing a substrate, wherein the first exposure light and the second exposure light are respectively divided by an optical system having an optical element that branches the third exposure light and the fourth exposure light. The first exposure area of the first substrate and the first exposure area of the second substrate are respectively exposed with the first and third exposure lights, and the first substrate is respectively exposed with the second and fourth exposure lights by the optical system. And a second exposed area adjacent to the first exposed area of the second substrate is exposed.

  An exposure apparatus according to the present invention is an exposure apparatus that exposes a substrate, and an optical system that includes an optical element that branches the third exposure light and the fourth exposure light from the first exposure light and the second exposure light, respectively; A substrate stage for moving the first substrate and the second substrate; and exposing the first exposed region of the first substrate and the first exposed region of the second substrate with the first and third exposure lights from the optical system, respectively. And the second and fourth exposure lights from the optical system respectively expose the first stage and the second exposed area adjacent to the first exposed area of the second substrate. And a control device for controlling.

  A device manufacturing method according to the present invention includes forming a pattern of a photosensitive layer on a substrate using the exposure method or exposure apparatus of the present invention, and processing the substrate on which the pattern is formed. .

  According to the present invention, exposure is performed in parallel with the first and second exposed areas of the first substrate and the first and second exposed areas of the second substrate in one exposure. Therefore, since the number of substrate movements (step movements) between exposures can be reduced to almost half, the substrate can be exposed with higher productivity.

[First Embodiment]
Hereinafter, a first embodiment of the present invention will be described with reference to the drawings. In the following description, the positional relationship of each member will be described with reference to the following XYZ orthogonal coordinate system. That is, the orthogonal coordinate axes in the horizontal plane are taken as the X axis and the Y axis, the Z axis is taken along the direction perpendicular to the X axis and the Y axis (that is, the vertical direction), and the axes are parallel to the X axis, the Y axis, and the Z axis. The rotation (inclination) directions around are defined as θX, θY, and θZ directions, respectively.

  FIG. 1 is a schematic block diagram that shows an exposure apparatus EX according to the present embodiment. In FIG. 1, an exposure apparatus EX includes a first mask stage 1 that can move while holding a first mask M1 having a first pattern PA1, and a second pattern PA2 (the same pattern as the first pattern PA1 in this embodiment). A second mask stage 2 that can move while holding a second mask M2, a first substrate stage 4 that can move while holding a first substrate P1, and a second mask stage that can move while holding a second substrate P2. Two substrate stages 5, a measurement system 3 capable of measuring position information of each stage, a first illumination system IL1 that illuminates the first pattern PA1 of the first mask M1 with the first exposure light EL1, and a second exposure light EL2. The second illumination system IL2 that illuminates the second pattern PA2 of the second mask M2, the projection optical system PL, and the control device 100 that controls the operation of the entire exposure apparatus EX.

In other words, the exposure apparatus EX includes two mask stages and two substrate stages. The substrates P1 and P2 are disk-shaped semiconductor wafers having a diameter of 300 mm or 450 mm, for example, and a resist (photosensitive material) is coated on the surface thereof.
The projection optical system PL branches the third exposure light EL3 and the fourth exposure light EL4 from the first exposure light EL1 and the second exposure light EL2, respectively, and the image of the first pattern PA1 illuminated with the first exposure light EL1. The image of the second pattern PA2 illuminated with the second exposure light EL2 is projected onto the first substrate P1, and the image of the first pattern PA1 with the third exposure light EL3 and the second pattern PA2 with the fourth exposure light EL4. Are projected onto the second substrate P2. The projection magnification of the projection optical system PL is a reduction magnification of, for example, 1/4, 1/5, or 1/8. The first substrate stage 4 and the second substrate stage 5 are movable on the base member BP on the light emission side of the projection optical system PL, that is, on the image plane side of the projection optical system PL. The control device 100 is connected to a storage device 102 that stores various types of information related to exposure.

  The first and second illumination systems IL1 and IL2 include a light source, an illumination optical system, and the like as disclosed in, for example, Japanese Patent Application Laid-Open No. 2001-313250 (corresponding US Patent Application Publication No. 2003/0025890). Illumination optical system includes an optical integrator (fly eye lens, rod integrator (internal reflection type integrator), diffractive optical element, etc.) and the like, an illuminance uniformizing optical system (all not shown), and blinds MB1, MB2 ( Variable field stop). The illumination systems IL1 and IL2 illuminate the slit-shaped illumination areas on the masks M1 and M2 defined by the blinds MB1 and MB2 with the exposure lights EL1 and EL2 with a substantially uniform illuminance. For example, ArF excimer laser light (wavelength 193 nm) is used as the exposure light beams EL1 and EL2 having the same wavelength. As the exposure light, KrF excimer laser light (wavelength 248 nm), harmonics of a YAG laser or a solid-state laser (semiconductor laser, etc.), or a bright line (i-line etc.) of a mercury lamp can be used.

  In addition, the projection optical system PL of the present embodiment includes the combining optical element 20 on which the first exposure light EL1 from the first pattern PA1 and the second exposure light EL2 from the second pattern PA2 are incident. The synthesizing optical element 20 branches the third exposure light EL3 and the fourth exposure light EL4 having approximately half the intensity from the first exposure light EL1 and the second exposure light EL2, respectively, and two exposures left by the branching. Light (also referred to as first exposure light EL1 and second exposure light EL2) is combined, and third exposure light EL3 and fourth exposure light EL4 are combined. Accordingly, the composite optical element 20 can also be used as a branching optical element (for example, a half prism) that branches the first exposure light EL1 from the first pattern PA1 and the second exposure light EL2 from the second pattern PA2 at the half mirror surface 20A. Works.

  The projection optical system PL sets the first exposure area AR1 and the second exposure area AR2 in a predetermined positional relationship on the first substrate P1 on the image plane side, and the third exposure area on the second substrate P2. AR3 and fourth exposure area AR4 are set in a predetermined positional relationship. Then, the projection optical system PL converts the image of the first pattern PA1 by the first exposure light EL1 from the combining optical element 20 and the image of the second pattern PA2 by the second exposure light EL2 into the first exposure area AR1 and the second exposure. The image of the first pattern PA1 by the third exposure light EL3 from the combining optical element 20 and the image of the second pattern PA2 by the fourth exposure light EL4 can be formed in the area AR2 and the third exposure area AR3. It can be formed in four exposure areas AR4.

  In the present embodiment, the exposure areas AR1 and AR3 and the exposure areas AR2 and AR4 are separated in the Y direction by, for example, an interval about the width of the scribe line area SL between a plurality of shot areas on the substrates P1 and P2 (FIG. 6). (See (A)). Then, as will be described later, the first shot area is exposed in the first exposure area AR1 via the projection optical system PL on the first substrate P1 by one scanning exposure, and then the second exposure area AR2 In parallel with the exposure of the second shot area, the first shot area is exposed in the third exposure area AR3 via the projection optical system PL on the second substrate P2, and then the second exposure area AR4 in the second exposure area AR4. Can be exposed.

  That is, the exposure apparatus EX of the present embodiment moves the first mask M1 and the second mask M2, the first substrate P1 and the second substrate P2 in a predetermined scanning direction, and moves the first pattern of the first mask M1. This is a scanning exposure apparatus (so-called scanning stepper) that projects the image of PA1 and the image of the second pattern PA2 of the second mask M2 onto the first and second substrates P1 and P2. In the present embodiment, the scanning direction (synchronous movement direction) of the first substrate P1 and the second substrate P2 by the first substrate stage 4 and the second substrate stage 5 is the Y direction (direction parallel to the Y axis).

  In addition, the exposure apparatus EX of the present embodiment moves the first mask M1 in the Y direction by the first mask stage 1 in synchronization with the movement of the first substrate P1 and the second substrate P2 in the Y direction. The second mask M2 is moved in the Z direction by the mask stage 2. That is, in the present embodiment, the scanning direction (synchronous movement direction) of the first mask M1 is the Y direction, and the scanning direction (synchronous movement direction) of the second mask M2 is the Z direction.

  Next, the first mask stage 1 holds the first mask M1 by driving a first mask stage driving device 1D including an actuator such as a linear motor, for example, and the X axis, Y axis, Z axis, θX, θY And in the direction of 6 degrees of freedom in the θZ direction. The first mask stage 1 holds the first mask M1 so that the first pattern formation surface on which the first pattern PA1 of the first mask M1 is formed and the XY plane are substantially parallel. The position information of the first mask stage 1 (and hence the first mask M1) is measured by the laser interferometer 31 of the measurement system 3. The laser interferometer 31 measures the position information of the first mask stage 1 using the reflecting surface 31K of the movable mirror provided on the first mask stage 1. The control device 100 drives the first mask stage driving device 1D based on the measurement result of the laser interferometer 31, and controls the position of the first mask M1 held on the first mask stage 1.

  The second mask stage 2 holds the second mask M2 by driving a second mask stage driving device 2D including an actuator such as a linear motor, for example, and the X axis, Y axis, Z axis, θX, θY, And in the direction of 6 degrees of freedom in the θZ direction. The second mask stage 2 holds the second mask M2 so that the second pattern formation surface on which the second pattern PA2 of the second mask M2 is formed and the XZ plane are substantially parallel. The position information of the second mask stage 2 (and hence the second mask M2) is measured by the laser interferometer 32 of the measurement system 3. The laser interferometer 32 measures the position information of the second mask stage 2 using the reflecting surface 32K of the moving mirror provided on the second mask stage 2. The control device 100 drives the second mask stage driving device 2D based on the measurement result of the laser interferometer 32, and controls the position of the second mask M2 held on the second mask stage 2.

  2A is a plan view showing the first mask M1 held on the first mask stage 1, and FIG. 2B is a plan view showing the second mask M2 held on the second mask stage 2. FIG. is there. As shown in FIGS. 2A and 2B, the first illumination area IA1 by the first exposure light EL1 on the first mask M1 and the second exposure light EL2 by the second exposure light EL2 on the second mask M2. The two illumination areas IA2 are each set in a rectangular shape (slit shape) with the X direction as the longitudinal direction.

  The first mask stage 1 can move the first mask M1 in the Y direction with respect to the first illumination area IA1. Further, the second mask stage 2 can move the second mask M2 in the Z direction with respect to the second illumination area IA2. When the control apparatus 100 exposes the first and second substrates P1 and P2, the first pattern formation area SA1 where the first pattern PA1 is formed in the first mask M1 passes through the first illumination area IA1. The first mask stage 1 is moved in the Y direction. Further, when the control apparatus 100 exposes the first and second substrates P1 and P2, the second pattern formation area SA2 in which the second pattern PA2 is formed out of the second mask M2 passes through the second illumination area IA2. As described above, the second mask stage 2 is moved in the Z direction.

  The first mask M1 includes a first alignment mark RM1 formed in a predetermined positional relationship with the first pattern PA1, and the second mask M2 is a second mask formed in a predetermined positional relationship with the second pattern PA2. An alignment mark RM2 is provided. In the present embodiment, each of the first and second alignment marks RM1 and RM2 includes a two-dimensional mark, for example, a cross-shaped mark. Actually, the alignment marks RM1 and RM2 are formed in regions within the width in the X direction of the illumination regions IA1 and IA2.

  In the present embodiment, during alignment of the masks M1 and M2, the first and second alignment marks RM1 and RM2 are arranged in the first and second illumination areas IA1 and IA2 by the first and second mask stages 1 and 2, The images of the alignment marks RM1 and RM2 are detected through the slits 173A and 173B of the optical sensor 170 (see FIG. 3) (aerial image measurement system) of the first and second substrate stages 4 and 5. The number and arrangement of alignment marks RM1 and RM2 are arbitrary.

  Next, in FIG. 1, a plurality of optical elements of the projection optical system PL are held by a lens barrel (not shown). The projection optical system PL also includes a first optical system 11 (first imaging system) that guides the first exposure light EL1 from the first pattern PA1 to the combining optical element 20, and a second exposure light from the second pattern PA2. A second optical system 12 (second imaging system) that guides EL2 to the combining optical element 20, and a first exposure area AR1 and a second exposure light from the first exposure light EL1 and the second exposure light EL2 from the combining optical element 20, respectively. The third optical system 13 (third imaging system) that guides to the area AR2, and the third exposure light EL3 and the fourth exposure light EL4 from the combining optical element 20 are guided to the third exposure area AR3 and the fourth exposure area AR4, respectively. A mirror 15 and a fourth optical system 14 (fourth imaging system) are provided.

  The synthetic optical element 20 has substantially the same reflectance and transmittance. The composite optical element 20 passes a part (EL1) of the first exposure light EL1 incident through the first mask M1 and the first optical system 11 as described above, and reflects the remaining part (EL3). The first exposure light that reflects and passes a part (EL2) of the second exposure light EL2 incident through the second mask M2 and the second optical system 12 and passes the remaining part (EL4). The EL1 and the reflected second exposure light EL2 are combined, and the reflected third exposure light EL3 and the passing fourth exposure light EL4 are combined.

  Further, the projection optical system PL includes a first imaging characteristic adjusting device LC1 and a second coupling characteristic LC1 that can independently adjust the imaging characteristics of the image of the first pattern PA1 and the image of the second pattern PA2 by the projection optical system PL. An image characteristic adjusting device LC2 is provided. The first and second imaging characteristic adjusting devices LC1 and LC2 include an optical element driving mechanism capable of moving at least one of the plurality of optical elements of the projection optical system PL.

  The first imaging characteristic adjusting device LC1 drives the specific optical element of the first optical system 11 to form an image of the first pattern PA1 formed in the first exposure area AR1 and the third exposure area AR3. The characteristics can be adjusted. The second imaging characteristic adjusting device LC2 drives a specific optical element of the second optical system 12 to form an image of the second pattern PA2 formed in the second exposure area AR2 and the fourth exposure area AR4. The characteristics can be adjusted.

  The imaging characteristic adjusting devices LC1 and LC2 are controlled by the control device 100. The control device 100 drives various optical elements (for example, distortion) of the projection optical system PL by driving specific optical elements of the projection optical system PL (optical systems 11 and 12) using the imaging characteristic adjusting devices LC1 and LC2. , Astigmatism, spherical aberration, wavefront aberration, etc.), projection magnification, image plane position (focal position), and the like can be adjusted.

Further, the control device 100 uses the imaging characteristic adjusting devices LC1 and LC2 to adjust the position of the images of the patterns PA1 and PA2 in the X direction, Y direction, and / or θZ direction (that is, shift adjustment and / or rotation adjustment). ) Can also be performed.
Further, at least one optical element of the third optical system 13 is movable in the Z direction, X direction, and Y direction parallel to the optical axis of the third optical system 13, and is rotatable in the θX and θY directions. The imaging characteristic adjusting device and / or at least one optical element of the fourth optical system 14 is movable in the Z direction, the X direction, and the Y direction parallel to the optical axis of the fourth optical system 14, and θX, An imaging characteristic adjusting device that can rotate in the θY direction may be provided.

  An exposure apparatus provided with an image formation characteristic adjustment device capable of adjusting the image formation characteristic of the pattern image by the projection optical system is disclosed in, for example, Japanese Patent Laid-Open No. 60-78454 (corresponding US Pat. No. 4,666,273). ), JP-A-11-195602 (corresponding US Pat. No. 6,235,438), WO 03/65428 pamphlet (corresponding US Patent Application Publication No. 2005/0206850), and the like.

  Furthermore, since the exposure apparatus EX of the present embodiment performs exposure by a liquid immersion method, the optical members at the lower ends of the third optical system 13 and the fourth optical system 14 of the projection optical system PL and the substrates P1 and P2 below the optical members A liquid Lq (for example, pure water) that transmits the exposure light to a local area (immersion area 41L) including the exposure areas AR1 and AR2 between, and a local area (immersion area 42L) including the exposure areas AR3 and AR4. Etc.) is provided. The local liquid immersion mechanism is provided at the lower ends of the third optical system 13 and the fourth optical system 14, and ring-shaped nozzle heads 41 and 42 having a supply port and a recovery port for the liquid Lq, and the nozzle heads 41 and 42. Liquid supply devices 43 and 44 are provided for supplying the liquid Lq via the piping and collecting the liquid Lq from the nozzle heads 41 and 42 via the piping. The operations of the liquid supply devices 43 and 44 are controlled by the control device 100. The configuration of the local liquid immersion mechanism is arbitrary, and the local liquid immersion mechanism is disclosed in, for example, the liquid immersion mechanism disclosed in International Publication No. 2004/053955, or European Patent Application No. 1420298. It is also possible to use a liquid immersion mechanism.

  Next, the first substrate stage 4 and the second substrate stage 5 will be described. The first substrate stage 4 is movable while holding the first substrate P1 within a predetermined area including the exposure areas AR1 and AR2. The first substrate stage 4 includes a stage main body 4B, a first substrate table 4T mounted on the stage main body 4B, and a substrate holder 4H provided on the first substrate table 4T and holding the first substrate P1. I have. The substrate holder 4H holds the first substrate P1 so that the surface of the first substrate P1 and the XY plane are substantially parallel.

  The exposure apparatus EX includes a first substrate stage driving device 4D that drives the first substrate stage 4. The first substrate stage driving device 4D moves the stage body 4B on the base member BP in the X direction, the Y direction, and the θZ direction, thereby mounting the first substrate table mounted on the stage body 4B. A first drive system 4DH capable of moving 4T in the X, Y, and θZ directions, and a second drive capable of moving the first substrate table 4T in the Z, θX, and θY directions relative to the stage body 4B. System 4DV. As shown in FIG. 1, the stage body 4B of the first substrate stage 4 is supported in a non-contact manner on the upper surface (guide surface) of the base member BP by an air bearing 4A. The upper surface of the base member BP is substantially parallel to the XY plane, and the first substrate stage 4 is movable on the base member BP along the XY plane.

The first drive system 4DH of the first substrate stage drive apparatus 4D includes an actuator such as a planar motor or a multi-axis linear motor, for example, and the second drive system 4DV is provided between the stage body 4B and the first substrate table 4T. For example, an actuator 4V such as a voice coil motor provided in at least three locations and a measuring device (encoder or the like) (not shown) for measuring the driving amount of each actuator are included.
The control device 100 determines the drive systems 4DH and 4DV based on measurement information from the measurement system 3 described later and measurement information from an autofocus sensor (not shown) that measures the focus positions (Z positions) of the surfaces of the substrates P1 and P2. The first substrate stage 4T (first substrate P1) of the first substrate stage 4 is moved in the X direction, Y direction, Z direction, θX direction, θY direction, and θZ direction via the first substrate stage driving device 4D including It can move in the direction of 6 degrees of freedom.

  The second substrate stage 5 has substantially the same configuration and operation as the first substrate stage 4, and includes a stage body 5B, a second substrate table 5T mounted on the stage body 5B, and a second substrate table 5T. And a substrate holder 5H for holding the second substrate P2. The stage body 5B is supported in a non-contact manner on the upper surface (guide surface) of the base member BP by an air bearing 5A. The substrate holder 5H holds the second substrate P2 so that the surface of the second substrate P2 and the XY plane are substantially parallel. The second substrate stage 5 is movable while holding the second substrate P2 within a predetermined area including the exposure areas AR3 and AR4.

  The second substrate stage 5 is driven by a second substrate stage driving device 5D. The second substrate stage driving device 5D has a configuration substantially the same as that of the first substrate stage driving device 4D, a first driving system 5DH capable of moving the stage body 5B in the X direction, the Y direction, and the θZ direction, and a stage A second drive system 5DV capable of moving the second substrate table 5T in the Z direction, θX direction, and θY direction with respect to the main body 5B is provided. The control device 100 controls the second substrate stage driving device 5D based on the measurement information of the measurement system 3 described later, whereby the surface of the substrate holder 5H (second substrate P2) of the second substrate table 5T in the X direction. , Y direction, Z direction, θX direction, θY direction, and θZ direction can be controlled with respect to six degrees of freedom.

  Position information of the first substrate stage 4 (first substrate P1) and the second substrate stage 5 (second substrate P2) is measured by the laser interferometers 34, 36, 35, and 37 of the measurement system 3. The measurement system 3 uses the reflecting surfaces 34K, 36K, 35K, and 37K provided at predetermined positions of the substrate tables 4T and 5T of the substrate stages 4 and 5, and the X, Y, and Z directions of the substrate tables 4T and 5T. , ΘX direction, θY direction, and θZ direction can be measured with respect to the positional information regarding the direction of six degrees of freedom.

  The laser interferometers 34 and 35 can irradiate the reflecting surfaces 34K and 35K with a plurality of measurement beams having the X direction as a measurement axis and a plurality of measurement beams having the Y direction as a measurement axis, and the substrate tables 4T and 5T. The positions in the X direction, Y direction, and θZ direction are measured. The laser interferometers 36 and 37 can irradiate the reflecting surfaces 36K and 37K with a plurality of measurement lights with the Z direction as a measurement axis, and measure the positions of the substrate tables 4T and 5T in the Z direction, θX, and θY directions. . The reflection surfaces 36K and 37K are inclined at a predetermined angle (for example, 45 degrees) with respect to the XY plane, are emitted from the laser interferometers 36 and 37, and are applied to the reflection surfaces 36K and 37K of the substrate tables 4T and 5T. The light is reflected by the reflecting surfaces 36K and 37K, and is applied to the reflecting surfaces 38K and 39K provided on a predetermined support member (for example, the measurement frame described above). The measurement light reflected by the reflecting surfaces 38K and 39K is received by the laser interferometers 36 and 37 via the reflecting surfaces 36K and 37K.

The measurement system 3 also includes an encoder system that detects a periodic lattice pattern of the scale.
FIG. 3 is a plan view showing the substrate stages 4 and 5 of FIG. In FIG. 3, the encoder system is disposed on the substrate tables 4T and 5T of the substrate stages 4 and 5 so as to surround the substrates P1 and P2, and reflects at a pitch of 100 nm to 4 μm (for example, 1 μm pitch) in the Y direction. A pair of Y scales 4Y1, 4Y2 and 5Y1, 5Y2 on which a grid pattern of the mold is formed, an X scale 4X1, 4X2 and 5X1, 5X2 on which a reflective grid pattern is formed at the same pitch in the X direction, and Y A plurality of Y heads 45Y and 46Y for detecting lattice patterns of scales 4Y1, 4Y2 and 5Y1, 5Y2, and a plurality of X heads 45X and 46X for detecting lattice patterns of X scales 4X1, 4X2, 5X1, and 5X2 are provided. .

  The Y heads 45Y and 46Y and the X heads 45X and 46X respectively irradiate the lattice pattern of the scale to be detected with laser light from above, and detect the 0th-order light and the 1st-order diffracted light generated from the lattice pattern. The displacement of the grating pattern is detected with the same resolution as the laser interferometer. The Y heads 45Y and 46Y and the X heads 45X and 46X are attached to a frame (not shown), for example. In this case, even if the substrate stages 4 and 5 are moved in the X direction and the Y direction during the exposure, any one pair of Y heads 45Y and 46Y and one pair of X heads 45X and 46X are connected to the Y scales 4Y1 and 4Y2. 5Y1 and 5Y2 and X scale 4X1, 4X2 and 5X1, 5X2 lattice patterns can be detected. In FIG. 3, the Y head and the X head located above the substrates P1 and P2 are not shown in order to avoid complication of the drawing. Therefore, by switching the detection results of the Y heads 45Y and 46Y and the X heads 45X and 46X, the influence of the fluctuation of the optical path is continuously reduced during exposure, and the X direction, Y direction, The position in the θZ direction can be detected with high accuracy.

  The control device 100 controls the position and speed of the substrate stages 4 and 5 with high accuracy using the measurement information of the interferometer system and / or the encoder system. Further, an area surrounding the substrates P1 and P2 on the upper surfaces of the substrate stages 4 and 5 (including the surfaces of the Y scales 4Y1, 4Y2, 5Y1, and 5Y2 and the X scales 4X1, 4X2, 5X1, and 5X2) is used to repel the liquid Lq. Liquid repellent treatment is applied.

  Further, for example, an image is formed by an off-axis method for detecting positions of predetermined alignment marks (not shown) on the substrates P1 and P2 on the side surfaces of the third optical system 13 and the fourth optical system 14 of the exposure apparatus EX of FIG. Processing type alignment systems 91 and 92 are arranged. Based on the detection results of the alignment systems 91 and 92 and the baseline measured in advance (the positional relationship between the pattern images of the masks M1 and M2 and the detection centers of the alignment systems 91 and 92), the control device 100 detects the substrates P1 and P1. Alignment of P2 is performed. Further, as shown in FIG. 3, reference members 171A and 171B are provided on the substrate tables 4T and 5T of the substrate stages 4 and 5, the photosensors 170 are provided on the reference members 171A and 171B, and the slits 173A of the photosensors 170 are provided. , 173B, a reference mark 172 made of a two-dimensional mark is formed. By detecting the reference mark 172 with the alignment systems 91 and 92, the baseline can be obtained.

  Next, an example of the exposure operation of the exposure apparatus EX of the present embodiment will be described with reference to the flowcharts of FIGS. 4 to 6 and FIG. This exposure operation is controlled by the control device 100 of FIG. 4 and 5 are diagrams showing an example of the positional relationship among the projection optical system PL, the masks M1 and M2, and the substrates P1 and P2 in FIG. 1, and FIGS. 6A to 6C are diagrams on the substrates P1 and P2. It is a top view which shows two shot area | regions during scanning exposure. In this case, the surfaces (exposure surfaces) of the substrates P1 and P2 to be exposed are divided into a large number of shot regions S at predetermined pitches in the X direction and the Y direction, as shown in FIG. The shot area S of the j-th column (j = 1, 2,...) In the X direction in the i-th row (i = 1, 2,...) Is represented by S (i, j). In this embodiment, it is assumed that overlay exposure is performed on the second and subsequent layers on the substrates P1 and P2, and a certain shot area S (i, j) on the substrates P1 and P2 is exposed during one scanning exposure. In this case, exposure is also performed on the shot area S (i + 1, j) (or S (i-1, j) is possible) adjacent to this in the Y direction (scanning direction). Further, the substrates P1 and P2 are exposed in parallel. At this time, when the image of the first pattern PA1 of the first mask M1 in FIG. 1 is exposed to the shot areas S (i, j) of the substrates P1 and P2, the adjacent shot areas S of the substrates P1 and P2 are exposed. The image of the second pattern PA2 of the second mask M2 is exposed to (i + 1, j). In the present embodiment, since the images of the patterns PA1 and PA2 are the same, the images of the same pattern are exposed to all the shot areas S (i, j) on the substrates P1 and P2.

  The alignment of the masks M1 and M2 is completed at the time of exposure, and the blinds MB1 and MB2 of the illumination systems IL1 and IL2 are closed. After the substrates P1 and P2 are loaded on the substrate stages 4 and 5, the alignment system The substrates P1 and P2 are aligned using 91 and 92 (step 240 in FIG. 7). Thereafter, the first and second substrate stages 4 and 5 are moved (stepped) to the scanning start position (step 241). For convenience of explanation, it is assumed that the shot areas S (5, 1) and S (6, 1) on the substrates P1 and P2 in FIG. At this time, the first mask stage 1 in FIG. 1 has moved to the end in the + Y direction, and the second mask stage 2 has moved to the end in the −Z direction.

  From this state, scanning of the substrate stages 4 and 5 in the −Y direction is started (step 242), and at the same time, scanning of the first mask stage 1 in the −Y direction is started (step 250). Thereafter, the blind MB1 of the first illumination system IL1 is opened (step 251), and as shown in FIG. 4, the shot area on the first substrate P1 in the first exposure area AR1 of the first exposure light EL1 from the first mask M1. S (5,1) is scanned and exposed, and in parallel with this, the shot area S (5,1) on the second substrate P2 in the third exposure area AR3 of the third exposure light EL3 branched from the first exposure light EL1. ) Is scanned and exposed (step 252). During this scanning exposure, the substrate stages 4 and 5 set the synchronization error so that the overlay error between the shot area S (5, 1) on the substrates P1 and P2 and the pattern image of the first mask M1 is minimized. It is driven substantially in the Y direction while correcting. During this scanning exposure, scanning of the second mask stage 2 in the + Z direction is started (step 260).

  Then, as shown in FIG. 6B from the state of FIG. 6A, the edge portion of the first exposure area AR1 (third exposure area AR3) is the shot area S (5, 1) on the substrate P1 (P2). ) Starts closing the blind MB1 in FIG. 1 after reaching the scribe line area SL at the end in the + Y direction (step 253). Then, after the exposure area AR1 (AR3) is closed, the blind MB2 of the second illumination system IL2 in FIG. 1 is opened (step 261), and as shown in FIGS. 5 and 6C, the second mask M2 is removed from the second mask M2. The second exposure area EL2 of the second exposure light EL2 scans and exposes the shot area S (6, 1) on the first substrate P1, and the fourth exposure light EL4 branched from the second exposure light EL2 in parallel with this. In the fourth exposure area AR4, the shot area S (6, 1) on the second substrate P2 is scanned and exposed (step 262). During this scanning exposure, the substrate stages 4 and 5 are synchronized so that the overlay error between the shot area S (6, 1) on the substrates P1 and P2 and the pattern image of the second mask M2 is minimized. It is driven substantially in the Y direction while correcting. During this scanning exposure, the scanning of the first mask stage 1 is completed (step 254).

  Thereafter, from the state of FIG. 6C, the edge portion of the second exposure area AR2 (fourth exposure area AR4) is scribed at the end in the + Y direction of the shot area S (6, 1) on the substrate P1 (P2). After reaching the line area SL, the blind MB2 in FIG. 1 starts to be closed (step 263). Then, after the exposure area AR2 (AR4) is closed, the scanning of the second mask stage 2 is finished (step 264), and the scanning of the substrate stages 4 and 5 in the Y direction is finished almost at the same time (step 270). . With this one-time scanning exposure, images of the same pattern of the masks M1 and M2 are exposed on the two shot areas S (5, 1) and S (6, 1) on the substrates P1 and P2 in FIG.

  Thereafter, it is determined whether or not there is an unexposed shot area on the substrates P1 and P2 (step 271). If there is an unexposed shot area, the operations from step 241 to 270 are repeated. Note that when the next two adjacent shot areas are exposed, the scanning directions of the substrate stages 4 and 5 and the mask stages 1 and 2 are reversed. Accordingly, after the operation of step 242 (scanning direction is reversed) in FIG. 7, first, the operations of steps 260 and 261 (reverse scanning direction) are performed, then the operations of steps 262 to 264 and steps 250 to 252 are performed. The operation (the scanning direction is reversed) is executed substantially in parallel. In this case, in FIG. 3, the first exposure area AR1 (or the second exposure area AR2) and the third exposure area AR3 (or the fourth exposure area AR4) are indicated by trajectories 47A and 47B with respect to the substrates P1 and P2, respectively. The pattern image of the mask M1 (or M2) is exposed to the shot area S (i, j) on the entire surface of the substrates P1 and P2. If only one shot area needs to be exposed in one scanning exposure at the peripheral portions of the substrates P1 and P2, only the mask stage 1 or the mask stage 2 in FIG. It may be driven to expose the image of the pattern of the mask M1 or M2 to the shot area.

  According to the present embodiment, the pattern images of the masks M1 and M2 can be exposed to the two shot regions arranged in the scanning direction on the substrates P1 and P2 by one scanning exposure, respectively. The number of step movements of the substrate stages 4 and 5 and the number of accelerations and decelerations for scanning exposure are approximately halved compared to the case of exposing to one shot area. Furthermore, exposure is performed on the substrates P1 and P2 in parallel. Therefore, the throughput of the exposure process can be greatly improved.

Effects and the like of this embodiment are as follows.
(1) The exposure method by the exposure apparatus EX of the present embodiment includes the composite optical element 20 that branches the third exposure light EL3 and the fourth exposure light EL4 from the first exposure light EL1 and the second exposure light EL2, respectively. By using the projection optical system PL (optical system), the first and third exposure lights EL1 and EL3 respectively cause the shot region S (5, 1) of the first substrate P1 and the shot region S (5, 1) of the second substrate P2. The exposure is performed (step 252), and by the projection optical system PL, the second and fourth exposure lights EL2 and EL4 are adjacent to the shot areas S (5, 1) of the first substrate P1 and the second substrate P2, respectively. 6, 1) is exposed.

Further, the exposure apparatus EX includes a projection optical system PL, substrate stages 4 and 5 that move the substrates P1 and P2, and a control device 100 that controls the operation of the substrate stages 4 and 5.
Accordingly, since the number of step movements of the substrates P1 and P2 between each exposure can be halved, the substrate can be exposed with higher productivity.
(2) The exposure lights EL1 and EL2 are exposure lights that have passed through the masks M1 and M2. Since the same pattern is formed on the masks M1 and M2 at the projection image stage, all of the substrates P1 and P2 are exposed. The same pattern image can be exposed to the shot area. Note that the patterns of the masks M1 and M2 may be different. In this case, images of different patterns are exposed in the adjacent shot areas S (i, j) and S (i + 1, j) of the substrates P1 and P2 by one scanning exposure.

(3) Since the exposure apparatus EX is a scanning exposure type, the patterns of the masks M1 and M2 can be formed in the adjacent shot regions S (i, j) and S (i + 1, j) on the substrates P1 and P2 in a very short time. Can be exposed.
(4) In this embodiment, the exposure area AR1 (AR3) and the exposure area AR2 (AR4) are separated in the Y direction, but the exposure area AR1 (AR3) and the exposure area AR2 (AR4) are one in the Y direction. It is also possible to arrange them so as to overlap each other. Also in this case, the exposure light EL1 (EL3) and the exposure light EL2 (EL4) are not actually irradiated at the same position on the substrate by opening and closing the blinds MB1 and MB2.

  In this embodiment, the X scale 4X1, the Y scale 4Y1, and the like are fixed to the substrate stage 4 side, and the X head 45X, the Y head 45Y, and the like are fixed to a frame (not shown) thereabove. However, conversely, the X head 45X and the Y head 45Y may be fixed to the substrate stage 4 side, and the X scale 4X1 and the Y scale 4Y1 may be fixed to the upper frame (not shown). The same applies to the substrate stage 5.

[Second Embodiment]
An exposure apparatus EX according to a second embodiment of the present invention will be described with reference to FIG. In this embodiment, two substrates P1 and P2 are held by a single substrate stage. In FIG. 8, portions corresponding to FIG. 1 are denoted by the same reference numerals, and detailed description thereof is omitted or simplified. Turn into. In other words, the exposure apparatus of this embodiment includes two mask stages and one substrate stage.

  FIG. 8 shows the exposure apparatus EX of the present embodiment. The exposure apparatus EX of FIG. 8 includes a substrate stage 4 ′ that moves while holding the two substrates P1 and P2 in parallel, and a measurement system 3 ′ that measures positional information of the substrate stage 4 ′. 'Includes a stage main body 140 that moves on the base member BP, and substrate holders 141 and 142 that hold the substrates P1 and P2 by suction. The substrate stage 4 'is provided with a substrate stage driving device 140D similar to the substrate stage driving device 4D of FIG. In this case, the substrate stage driving device 140D can control the positions of the substrate holders 141 and 142 in the Z direction, θX, and θY directions independently of each other. Further, the substrate stage driving device 140D controls the positions of the stage main body 140 in the X direction, Y direction, and θZ direction, and for example, determines the positions of one basic holder 141 (substrate P1) in the X direction, Y direction, and θZ direction. Fine adjustment is also possible.

  The measurement system 3 ′ includes a laser interferometer 134. The laser interferometer 134 measures the positions of the stage main body 140 in the X direction, Y direction, θX direction, θY direction, and θZ direction, and the substrate holder 141. , 142 are also measured in the X direction, Y direction, θX direction, θY direction, and θZ direction. Further, a laser interferometer 36 for position measurement in the Z direction in FIG. 1 is also provided (not shown in FIG. 8). The control device (not shown) of the exposure apparatus EX in FIG. 8 controls the relative positions of the substrate holders 141 and 142 with respect to the substrate stage 4 ′ and, for example, the substrate stage 4 ′ with six degrees of freedom based on the measurement information of the measurement system 3 ′. To do. Other configurations are the same as those of the embodiment of FIG.

Also in the exposure apparatus EX of FIG. 8, at the time of exposure of the substrates P1 and P2, as in the exposure sequence of FIG. 7, 2 adjacent to the Y direction of the substrates P1 and P2 on the substrate stage 4 ′ in one scanning exposure. The pattern images of the masks M1 and M2 are exposed to one shot area. Therefore, the throughput of the exposure process is improved.
[Third Embodiment]
An exposure apparatus according to a third embodiment of the present invention will be described with reference to FIG. In this embodiment, four substrate stages are used. In FIG. 9, parts corresponding to those in FIGS. 1 and 3 are denoted by the same reference numerals, and detailed description thereof is omitted or simplified. In other words, the exposure apparatus of this embodiment includes two mask stages and four substrate stages.

  FIG. 9 shows substrate stages 4, 5, 400, 500 that hold and move four substrates P1, P2, P3, P4 on the base member BP of the exposure apparatus of the present embodiment. The configurations of the substrate stages 400 and 500 are the same as those of the substrate stages 4 and 5, respectively, and reference marks 172 are also formed on the reference members 171C and 171D on the substrate stages 400 and 500, respectively. Further, on the base member BP, the third optical system 13 (exposure areas AR1, AR2) and the fourth optical system 14 (exposure areas AR3, AR4) of the projection optical system PL of FIG. For example, image processing type alignment systems ALA and ALB for detecting the position of the alignment mark on the substrate are arranged at two positions on the + X direction side. In addition, at both ends in the X direction of the substrate stages 4, 5, 400, 500, there are proximity sensors for position detection when the two substrate stages are brought close to or in close contact with each other, as will be described later, and the proximity or close contact state. A coupling mechanism is provided for maintenance. Other configurations are the same as those of the embodiment shown in FIGS.

  In the embodiment of FIG. 9, assuming that the alignment of the substrates P1 and P2 on the substrate stages 4 and 5 is completed, one exposure of the liquid is performed at the time of exposure of the substrates P1 and P2 as in the exposure sequence of FIG. In the immersion scanning exposure, the pattern images of the masks M1 and M2 in FIG. 1 are exposed to two shot regions adjacent in the Y direction of the substrates P1 and P2 on the substrate stages 4 and 5. Therefore, the throughput of the exposure process is improved. At this time, the substrates P1 and P2 are relatively scanned in an immersion area 41L below the third optical system 13 and an immersion area 42L below the fourth optical system 14, respectively.

Next, when exposure of the substrates P3 and P4 on the substrate stages 400 and 500 is performed, first, the alignment systems ALA and ALB use the reference marks 172 of the reference members 171C and 171D as a reference to positions of predetermined alignment marks on the substrates P3 and P4. Is detected (alignment) of the array coordinates of all shot regions of the substrates P3 and P4.
Thereafter, as shown in FIG. 10 as an example, the −X direction side surfaces of the substrate stages 400 and 500 are brought close to or almost in close contact with the side surfaces of the substrate stages 4 and 5 in the + X direction, so that the liquid immersion region of the third optical system 13 is obtained. The substrate stages 4 and 400 and the substrate stages 5 and 500 are moved in the −X direction in synchronization with the immersion region 42L of 41L and the fourth optical system 14. As a result, as indicated by arrows 53A and 53B, the liquid immersion regions 41L and 42L move from the substrate stages 4 and 5 to the substrate stages 400 and 500, respectively, so that the substrates P3 and P4 on the substrate stages 400 and 500 are moved. In contrast, immersion exposure can be performed quickly.

At this time, the center of the substrate stage 4 (substrate stage 5) in the Y direction is shifted from the center of the substrate stage 400 (substrate stage 500) in the Y direction by a predetermined amount. As a result, it is possible to quickly exchange the positions of the subsequent substrate stage 4 (substrate stage 5) and substrate stage 400 (substrate stage 500).
That is, as indicated by the trajectories 51A and 51B, the substrate stages 4 and 5 move below the alignment systems ALA and ALB, and during this movement, the substrates P1 and P2 are unloaded and the next exposure target substrate is loaded. Done. Then, alignment is performed on the substrates on the substrate stages 4 and 5 by the alignment systems ALA and ALB.

  On the other hand, the substrate stages 400 and 500 sequentially move below the third optical system 13 and the fourth optical system 14 as indicated by the trajectories 52A and 52B, for example, with reference marks 172 on the reference members 171C and 171D and FIG. The relationship with the position of the alignment mark image of the masks M1 and M2 is measured. After this, based on the shot arrangement information of the substrates P3 and P4 measured in advance by the alignment systems ALA and ALB, the alignment of the shot areas of the substrates P3 and P4 and the pattern images of the masks M1 and M2 is performed. It can be performed with high accuracy. Therefore, as in the exposure sequence of FIG. 7, two shot regions adjacent to each other in the Y direction of the substrates P3 and P4 on the substrate stages 400 and 500 are sequentially subjected to one scanning exposure of the immersion method in FIG. The pattern images of the masks M1 and M2 are exposed. Therefore, the throughput of the exposure process is improved.

Thereafter, similarly, after the immersion regions 41L and 42L are transferred from the substrate stages 400 and 500 onto the substrate stages 4 and 5, the substrate stages 4 and 5 are, for example, the third optical system as indicated by the trajectories 51A and 51B. 13 and the fourth optical system 14 are moved below, and the substrate stages 400 and 500 are moved below the alignment systems ALA and ALB as shown by the trajectories 52A and 52B.
Thus, according to the present embodiment, the alignment of the substrates P3 and P4 can be executed during the exposure of the substrates P1 and P2, so that the throughput of the exposure process can be further increased.

In this embodiment, the immersion areas 41L and 42L are transferred at the end portions in the X direction of the substrate stages 4 and 5, but the immersion areas 41L and 42L are transferred in the Y direction of the substrate stages 4 and 5. It is also possible to carry out at the end of the.
The present invention can also be applied to exposure with a batch exposure type projection exposure apparatus such as a stepper. Further, the present invention can be similarly applied to exposure using a dry exposure type exposure apparatus that does not use a liquid immersion method.

  Further, when a device (electronic device, microdevice) such as a semiconductor device is manufactured using the exposure apparatus of the above-described embodiment, as shown in FIG. Step 202 for manufacturing a mask (reticle) based on this design step, Step 203 for manufacturing a substrate (wafer or the like) as a base material of the device, and exposure apparatus EX (projection exposure apparatus) of the above-described embodiment. Process of exposing pattern to substrate, process of developing exposed substrate, substrate processing step 204 including heating (curing) and etching process of developed substrate, device assembly step (dicing process, bonding process, packaging process, etc.) (Including the process) 205, and through the inspection step 206, etc. It is concrete.

In other words, the device manufacturing method includes the step of exposing the substrate using the exposure apparatus EX or the exposure method of the above embodiment, and the step of processing the exposed substrate (step 224). According to this device manufacturing method, since the productivity of the exposure process can be increased, the productivity of the device can be increased particularly when the substrate is enlarged.
Further, the present invention is not limited to the application to the manufacturing process of a semiconductor device. For example, a manufacturing process such as a liquid crystal display element and a plasma display, an imaging element (CMOS type, CCD, etc.), a micromachine, a MEMS ( (Microelectromechanical systems), thin film magnetic heads, and various devices (electronic devices) such as DNA chips can be widely applied. As described above, the present invention is not limited to the above-described embodiment, and various configurations can be taken without departing from the gist of the present invention.

It is a figure which shows schematic structure of the exposure apparatus of 1st Embodiment. (A) is a plan view showing the first mask stage 1, and (B) is a plan view showing the second mask stage 2. It is a top view which shows the substrate stages 4 and 5. FIG. It is a figure which shows an example of the positional relationship of projection optical system PL, mask M1, M2, and board | substrates P1, P2. It is a figure which shows another example of the positional relationship of projection optical system PL, mask M1, M2, and board | substrates P1, P2. (A) is a plan view showing a state in which the shot area S (5, 1) is exposed in the exposure area AR1 (AR3), and (B) is an end of the shot area S (5, 1) at the exposure area AR1 (AR3) FIG. 4C is a plan view showing a state in which the shot area S (6, 1) is exposed in the exposure area AR2 (AR4). It is a flowchart which shows an example of the exposure operation | movement of 1st Embodiment. It is a figure which shows schematic structure of the exposure apparatus of 2nd Embodiment. It is a figure which shows an example of arrangement | positioning of the substrate stage of the exposure apparatus of 3rd Embodiment. It is a figure which shows the state which replaces | exchanges the position of the substrate stage of 3rd Embodiment. It is a flowchart which shows an example of the manufacturing process of a device.

Explanation of symbols

  EX ... Exposure apparatus, IL1, IL2 ... Illumination system, M1, M2 ... Mask, PL ... Projection optical system, EL1-EL4 ... Exposure light, AR1-AR4 ... Exposure region, P1, P2 ... Substrate, 1, ... Mask stage 4, 5 ... substrate stage, 20 ... synthetic optical element, 100 ... control device

Claims (15)

In an exposure method for exposing a substrate,
An optical system having an optical element for branching the third exposure light and the fourth exposure light from the first exposure light and the second exposure light, respectively, with the first exposure light and the first exposure light on the first substrate. Exposing the exposed area and the first exposed area of the second substrate;
An exposure method comprising: exposing a second exposed area adjacent to the first exposed area of the first substrate and the second substrate by the optical system with the second and fourth exposure lights, respectively.   2. The exposure method according to claim 1, wherein the first and second exposure lights pass through the first and second patterns, respectively, and enter the optical element.   The exposure method according to claim 2, wherein the first pattern and the second pattern are the same pattern. When exposing the first exposed area of the first and second substrates,
Moving the first pattern and the first substrate relative to the first exposure light, and moving the second substrate relative to the third exposure light;
When exposing the second exposed area of the first and second substrates,
4. The second pattern and the first substrate are moved relative to the second exposure light, and the second substrate is moved relative to the fourth exposure light. An exposure method according to 1. The first and second exposed areas of the first substrate are adjacent to a direction of relative movement of the first substrate with respect to the first exposure light,
5. The exposure method according to claim 4, wherein the first and second exposed regions of the second substrate are adjacent to each other in a direction of relative movement of the second substrate with respect to the third exposure light.   6. The exposure method according to claim 1, wherein the first and second substrates are placed on first and second substrate stages that are driven independently of each other.   The exposure method according to claim 1, wherein the first and second substrates are placed on the same substrate stage. Forming a pattern of a photosensitive layer on a substrate using the exposure method according to claim 1;
Processing the substrate on which the pattern is formed. In an exposure apparatus that exposes a substrate,
An optical system having an optical element that branches the third exposure light and the fourth exposure light from the first exposure light and the second exposure light, respectively;
A substrate stage for moving the first substrate and the second substrate;
Exposing the first exposed area of the first substrate and the first exposed area of the second substrate, respectively, with the first and third exposure lights from the optical system;
The substrate stage is controlled to expose a second exposed area adjacent to the first exposed area of the first substrate and the second substrate with the second and fourth exposure lights from the optical system, respectively. A control device;
An exposure apparatus comprising: A first mask stage holding a first pattern;
A second mask stage for holding the second pattern,
10. The exposure apparatus according to claim 9, wherein the first and second exposure lights are incident on the optical element through the first and second patterns, respectively.   The exposure apparatus according to claim 10, wherein the first pattern and the second pattern are the same pattern. When exposing the first exposed area of the first and second substrates,
The first mask stage and the substrate stage are driven to move the first pattern and the first substrate relative to the first exposure light, and the second substrate relative to the third exposure light. Move relative,
When exposing the second exposed area of the first and second substrates,
The first mask stage and the substrate stage are driven to move the second pattern and the first substrate relative to the second exposure light and to move the second substrate relative to the fourth exposure light. The exposure apparatus according to claim 10, wherein the exposure apparatus is relatively moved. The first and second exposed areas of the first substrate are adjacent to a direction of relative movement of the first substrate with respect to the first exposure light,
The exposure apparatus according to claim 12, wherein the first and second exposure regions of the second substrate are adjacent to each other in a direction of relative movement of the second substrate with respect to the third exposure light.   14. The substrate stage according to claim 9, wherein the substrate stage includes a first substrate stage that moves the first substrate and a second substrate stage that moves the second substrate. 15. Exposure device. Forming a pattern of a photosensitive layer on a substrate using the exposure apparatus according to claim 9;
Processing the substrate on which the pattern is formed.

Images