JP2010062256A - Method of manufacturing semiconductor chip with bump - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a new method of manufacturing a semiconductor chip with bumps by which the semiconductor chip with the bumps having flat top surface is easily manufactured. <P>SOLUTION: The method of manufacturing the semiconductor chip 2 with the bumps is a method of manufacturing a semiconductor chip having bumps which has the plurality of bumps for external electric connections, and includes a printing step of printing solder paste 3 on an electrode surface of the semiconductor chip, and a flattening step of obtaining the bumps 5 having flat top surfaces by carrying out a heat treatment while bringing a member 4 having flatness into contact with an upper surface of the printed solder paste. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a semiconductor chip with bumps in which a plurality of bumps for electrical connection with the outside are formed on an electrode surface, and a semiconductor chip with bumps manufactured by the method.

  Bumps are indispensable in packages and mounting technologies such as TCP (Tape Carrier Package), BGA (Ball Grid Array), CSP (Chip Size Package), and FC (Flip Chip). Since the bump plays a role of electrical connection and mechanical holding, the height uniformity and the flatness of the surface are required. For this reason, the high cost due to the process of leveling and flattening is one of the factors, which is one of the barriers to popularization.

  Main bump materials include In alloy, Au, and polymer. At present, the mainstream is Au bumps and solder bumps, and various types of bump forming methods have been developed. Au bumps are used in TCP, CSP, FC, and the like.

  Solder bumps are well known as C4 (Controlled Collapse Chip Connection) technology. As methods for producing solder bumps, there are a solder ball mounting method, a vapor deposition method, an electrolytic plating method, etc., but all of them have a large number of steps and a large production loss, so that productivity is not sufficient. On the other hand, the screen printing method is a method in which a solder paste is printed on a semiconductor chip electrode and the printed solder paste is subjected to reflow heat treatment to form solder bumps. Therefore, the screen printing method is attracting attention as a simple and inexpensive manufacturing process. Development of bump forming technology by screen printing is progressing aiming at dry process, low cost and high precision.

As described above, the bump is required to be flat.
A CMP (Chemical Mechanical Polishing) technique is used as a technique for planarizing the bump surface. However, the planarization of the bump using the CMP technique has a technical problem such as dishing in which a depression is generated in the center of the bump, an environmental problem such as processing of an abrasive solution, and a throughput problem.

Japanese Patent Application Laid-Open No. H10-228561 discloses a method of continuously planarizing the surface of the bump and the surface of the insulating film by cutting using a cutting tool. However, equipment management is required, and the processing and manufacturing cost of the remaining cutting waste is high, so there are still problems in practical use.
International Publication No. 2004/061935 Pamphlet

  An object of the present invention is to easily manufacture a bumped semiconductor chip having a flat upper surface.

As a result of studies to solve the above problems, the present inventors have unexpectedly completed the following present inventions [1] to [5].
[1] A method of manufacturing a bumped semiconductor chip having a plurality of bumps for electrical connection with the outside, a printing step of printing a solder paste on the electrode surface of the semiconductor chip, and the printed solder paste A method of manufacturing a semiconductor chip with bumps, comprising: a planarization step of obtaining a bump with a flat top surface by performing a heat treatment while bringing a member having flatness into contact with the top surface.

[2] The heat treatment is a heat treatment of 235 ° C. or more and 3 seconds or more, and the solder paste contains at least two kinds of metal particles, wherein the first metal particles have an exothermic peak in the differential scanning calorimetry. [1] having at least one and at least one endothermic peak at 300 to 600 ° C., wherein the second metal particles have no exothermic peak and at least one endothermic peak at 210 to 260 ° C. ] Method.

[3] A bumped semiconductor chip manufactured by the method according to [1] or [2].

[4] The bumped semiconductor chip according to [3], wherein the bump has a structure having a granular alloy phase that does not melt at 300 ° C.

[5] The average composition ratio of the bumps is Cu: 22 mass% to 36 mass%, Ag: 3 mass% to 6 mass%, Sn: 53 mass% to 71 mass%, Bi: 1 mass% or more. The semiconductor chip with bumps according to [3] or [4], which is 3% by mass or less and In: 1% by mass or more and 3% by mass or less.

  According to the manufacturing method of the present invention, it is possible to easily manufacture a semiconductor chip with bumps having a flat upper surface.

  In the method of manufacturing a bumped semiconductor chip having a plurality of bumps for electrical connection with the outside, <1> a printing step of printing a solder paste on the electrode surface of the semiconductor chip; <2> the printed solder paste; A method for manufacturing a bumped semiconductor chip, which includes a planarization step of obtaining a bump having a flat upper surface by performing a heat treatment while bringing a flat member into contact with the upper surface, will be described below.

<1> Printing process for printing solder paste on electrode surface of semiconductor chip The solder paste is printed on the electrode of the semiconductor chip (FIG. 1A) on which the electrode is formed (FIG. 1B).
In the printing process, it is preferable to apply a solder paste onto the electrode surface of the semiconductor chip by a screen printing method using a metal mask, but for example, a discharge method using a dispenser or the like can also be employed.
The solder paste is preferably a solder paste containing a conductive filler made of a mixture of at least two kinds of metal particles. The solder paste preferably contains a flux composed of rosin, an activator, a solvent, and a thickener and the conductive filler. As a content rate of the electroconductive filler in a solder paste, 85-95 mass% is preferable. The flux is optimum for the surface treatment of the conductive filler made of metal particles, and promotes melting and thermal diffusion of the metal particles. As the flux, a known material, for example, a flux described in International Publication No. 2006/109573 pamphlet can be used, but it is more effective when an organic amine is further added as an oxide film removing agent. Moreover, you may use what adjusted the viscosity by adding the solvent to the well-known flux as needed.

When a mixture of the first metal particles and the second metal particles that are preferable as the conductive filler is exemplified, the first metal particles have an exothermic peak in differential scanning calorimetry (hereinafter also referred to as “DSC measurement”). Metal particles having at least one and at least one endothermic peak at 300 to 600 ° C., wherein the second metal particle has no exothermic peak and has at least one endothermic peak at 210 to 260 ° C. Particles are preferred. The fact that an exothermic peak is observed in DSC measurement means that it has a metastable phase, and that it has an endothermic peak means that it has a melting point.
The first metal particles include at least one metastable alloy phase observed as an exothermic peak by DSC measurement, and at least one melting point observed as an endothermic peak at 210 to 240 ° C. and 300 to 450 ° C. It is preferable to have one each and have no melting point observed as an endothermic peak at 50 to 209 ° C.

  In addition, the measurement by DSC shall be performed in a temperature range of 30 to 600 ° C., and a calorific value or an endothermic amount of ± 1.5 J / g or more is quantified as a peak derived from the measurement object, and peaks below that are determined. From the viewpoint of analysis accuracy, it shall be excluded.

  When a heat history equal to or higher than the melting point of the second metal particles is given to the mixture by heat treatment at 210 to 260 ° C., the second metal particles are melted and joined to the first metal particles. Thereby, the thermal diffusion reaction between the first metal particles and the second metal particles proceeds at an accelerated rate, the metastable alloy phase disappears, and a new stable alloy phase is formed. That is, the presence of the metastable alloy phase observed as an exothermic peak by DSC has the effect of promoting the progress of the thermal diffusion reaction. Here, the temperature of the said heat processing can be suitably set in the range of the peak temperature 235-260 degreeC which is the reflow heat processing conditions of lead-free solder, Preferably it is 240-260 degreeC.

  As the thermal diffusion reaction proceeds, the metal component having a melting point of 210 to 260 ° C. of the second metal particles is reduced to a newly formed stable alloy phase having a melting point of 300 to 450 ° C. That is, the endothermic amount at the time of melting derived from the second metal particles observed from the endothermic peak area of 210 to 240 ° C. after the heat treatment is reduced or disappears compared with that before the heat treatment. On the other hand, a new stable alloy phase that does not melt below 300 ° C. is formed by the reaction of the first metal particles and the second metal particles.

  The endothermic peak area of DSC at 50 to 240 ° C. after heat-treating the above mixture at 245 ° C. is preferably 0 to 90%, more preferably 0 to 70% before heat treatment. When the endothermic peak area is 90% or less, high heat resistance is exhibited by a new stable alloy phase that does not melt at less than 300 ° C. In addition, 0% means that the endothermic peak of DSC at 50 to 240 ° C. disappears after the heat treatment.

If the reflow heat treatment temperature at the time of bump connection between the electrode of the semiconductor chip or package and the electrode of the circuit board is less than 300 ° C., the bump formed by melting with the conductive filler will not be completely melted even if a thermal history is given. .
As the first metal particles, metal particles made of an alloy having a composition of 20 to 50% by mass of Cu and 50 to 80% by mass of at least one element selected from the group consisting of Ag, Bi, In, and Sn are preferable. . As the second metal particles, a metal having a melting point of 210 to 260 ° C is preferable, and a metal having a melting point of 220 to 240 ° C is more preferable. Sn and SAC are illustrated as a metal particle which has melting | fusing point in 220-240 degreeC. When the main component is Sn, it is preferable that Cu in the first metal particles is 50% by mass or more in order to increase the bonding strength by heat treatment. Further, in order to develop at least one metastable alloy phase and at least one melting point at 300 to 600 ° C., the first metal particles have at least one selected from the group consisting of Ag, Bi, In, and Sn. The element is preferably 10% by mass or more.

  The first metal particles are more preferably metal particles having a composition of Cu 60 to 70% by mass, Sn 10 to 20% by mass, Ag 5 to 15% by mass, Bi 3 to 7% by mass, and In 3 to 7% by mass. In order to facilitate the development of the metastable alloy phase, it is more preferable that Ag is 7% by mass or more and Bi is 4% by mass or more. In order to promote alloying with the second metal particles during the heat treatment, it is more preferable that Sn is 12% by mass or more and In is 4% by mass or more. Moreover, in order to make Cu 60 mass% or more, it is more preferable that Sn, Ag, Bi, and In are 18 mass% or less, 12 mass% or less, 6 mass% or less, and 6 mass% or less, respectively.

  Even more preferable first metal particles are metal particles having a composition of Cu 63 to 67% by mass, Ag 8 to 12% by mass, Bi 4 to 6%, In 4 to 6%, and the balance Sn.

  As the second metal particles, metal particles containing 70 to 100% by mass of Sn are preferable. When the main component of the first metal particles is Cu, it is preferable that the Sn content in the second metal particles is 70% by mass or more in order to increase the bonding strength by heat treatment. Moreover, since Sn has a melting point of 232 ° C., it is also preferable for causing the second metal particles to have a melting point of 210 to 240 ° C. As a component other than Sn, it is preferable that a metal element used in lead-free solder, for example, Ag, Al, Bi, Cu, Ge, In, Ni, Zn, is 30% by mass or less.

  Further, the second metal particles are composed of Sn 100 mass% or Sn 70-99.9 mass% and at least one element selected from the group consisting of Ag, Bi, Cu, and In, 0.1-30 mass%. More preferred are metal particles made of an alloy having

  The mixing ratio of the first metal particles and the second metal particles is preferably 30 to 100 parts by mass of the second metal particles, more preferably 40 to 90 parts by mass with respect to 100 parts by mass of the first metal particles. 50-85 mass parts is the most preferable. If the second metal particle is 50 parts by mass or more with respect to 100 parts by mass of the first metal particle, the connection strength at room temperature is high, and if the second metal particle is 85 parts by mass or less, the connection at 260 ° C. High connection strength.

  The particle size of the metal particles can be determined according to the bump forming method. For example, in the screen printing method, it is preferable to use particles having a relatively high sphericity with a broad particle size distribution in the range of an average particle size of 2 to 40 μm, with emphasis on the ability to remove the paste plate. Conversely, in the dipping method, it is preferable to sharpen the particle size distribution in consideration of paste fluidity.

  In general, since the surface of fine metal particles is often oxidized, it is preferable to add an activator for removing the oxide film in order to promote melting and thermal diffusion in the heat treatment in the above-described application.

  As a method for producing the first metal particles and the second metal particles constituting the conductive filler, an inert gas atomization which is a rapid solidification method in order to form a metastable alloy phase or a stable alloy phase in the metal particles. It is desirable to adopt the law. In the gas atomization method, an inert gas such as nitrogen gas, argon gas, or helium gas is usually used, but in the present invention, helium gas is preferably used, and the cooling rate is preferably 500 to 5000 ° C./second. .

  Since the solder paste contains the second metal particles that melt and the first metal particles that do not melt in the reflow heat treatment, the solder paste does not spread out and can be maintained without breaking the paste shape after screen printing. Further, it is preferable that the external connection surfaces of the bumps can be uniformly flattened because the load (temperature, pressure) when connecting to the external electrodes can be minimized.

  Examples of the electrode metal suitable for bump formation include Cu, Ag, Au, Ni, Sn, Al, Ti, Pd, and Si, and more preferably Cu, Ag, and Au. Since the surface of the metal other than Au is easily oxidized, good bump formation is possible if the electrode surface is surface-treated with a flux or pre-flux coated before the paste is printed and applied. Examples of the solder coating on the circuit board electrode include Sn, Sn—Ag, Sn—Cu, Sn—Bi, Sn—Bi—Ag, and Sn—Ag—Cu, and more preferably Sn, Sn—Ag. Sn-Ag-Cu.

<2> A flattening step for obtaining a bump having a flat top surface by performing a heat treatment while bringing a flat member into contact with the upper surface of the printed solder paste. Subsequently, a member having flatness on the electrode surface of the semiconductor chip Heat treatment is performed while contacting the upper surface of the solder paste printed with 4 (FIG. 1 (c)). By the heat treatment, the semiconductor paste becomes bumps whose upper part is flattened (FIG. 1D).
The material of the flat member is preferably a material that does not adhere even if the metal in the solder at the time of reflow is melted, and examples thereof include glass, ceramic, and high heat resistance resin.

  The heat treatment is preferably performed at a minimum temperature of 235 ° C. or more, more preferably 245 ° C. or more for 3 to 60 seconds. In order for the second metal particles to thermally diffuse, it is preferably 3 seconds or more, and preferably within 60 seconds from the viewpoint of protecting the semiconductor chip. Furthermore, it is preferable to perform the heat treatment at a peak temperature of 245 ° C. to 260 ° C. for 3 to 30 seconds. The heat treatment may be performed in an air atmosphere, but is more preferably performed in a nitrogen atmosphere. More preferably, the heat treatment is performed using a solder reflow apparatus in a nitrogen atmosphere having a peak temperature of 235 ° C. to 250 ° C. and an oxygen concentration of 1000 ppm or less. Subsequently, the member having flatness is removed. When removing, it is preferable that stress is not applied to the bump as much as possible.

  The bumps of the semiconductor chip with bumps obtained by the above manufacturing method preferably have a structure having a granular alloy phase that does not melt at 300 ° C. from the viewpoint of preventing short-circuiting between the bumps due to several reflows. The metal composition of the bumps is Cu: 22 mass% to 36 mass%, Ag: 3 mass% to 6 mass%, Sn: 53 mass% to 71 mass%, Bi: 1 mass% to 3 mass% Hereinafter, In: 1% by mass or more and 3% by mass or less is preferable.

The bump upper surface of the semiconductor chip with bumps obtained by the above manufacturing method is flat. The flatness can be confirmed by the following measurement method.
The bump upper surface is measured by screen printing on a Cu substrate with a metal mask having a diameter of 300 μm and a thickness of 0.1 mm, and embedding and curing the reflow-treated sample with epoxy. The cured sample is subjected to cross-sectional polishing, and the vicinity of the center of the bump is photographed with an optical microscope equipped with a camera.

(Difference between the height of the most convex part on the surface and the height of the most concave part on the surface) / the length of the bump surface was obtained.
As a shape of the bump, a truncated cone is preferable, and a trapezoid is preferable in a cross section when the center of the bump is cut perpendicular to the electrode surface.

The invention will now be described on the basis of the following non-limiting examples.
(1) Production of first metal particles 6.5 kg of Cu particles (purity 99 mass% or more), 1.5 kg of Sn particles (purity 99 mass% or more), 1.0 kg of Ag particles (purity 99 mass% or more), Bi 0.5 kg of particles (purity 99% by mass or more) and 0.5 kg of In particles (purity 99% by mass or more) were put in a graphite crucible and heated to 1400 ° C. with a high frequency induction heating device in a helium atmosphere of 99% by volume or more. Melted. Next, after introducing the molten metal from the tip of the crucible into a spray tank in a helium gas atmosphere, helium gas (purity 99 vol% or more, oxygen concentration 0.1 vol%) is supplied from a gas nozzle provided near the crucible tip. Less than the pressure of 2.5 MPa), atomization was performed to produce first metal particles. The cooling rate at this time was 2600 ° C./second.

  When the obtained 1st metal particle was observed with the scanning electron microscope (Hitachi, Ltd. product: S-2700), it was spherical. The metal particles were classified by using an airflow classifier (manufactured by Nissin Engineering Co., Ltd .: TC-15N) at a setting of 1.6 μm, and then the overcut powder was classified again at a setting of 10 μm. Undercut powder was collected. The recovered first metal particles had a volume average particle size of 2.2 μm. The first metal particles thus obtained were used as samples, and “DSC-50” manufactured by Shimadzu Corporation was used, and the temperature was 30 to 600 ° C. under a temperature increase rate of 10 ° C./min in a nitrogen atmosphere. Differential scanning calorimetry was performed over the range. It was confirmed that the obtained first metal particles had endothermic peaks at 495 ° C. and 514 ° C. and had a plurality of melting points. Moreover, the exothermic peak of 254 degreeC existed and it has confirmed that it had a metastable alloy phase.

(2) Production of Second Metal Particles 10.0 kg of Sn particles (purity 99% by mass or more) were put in a graphite crucible and heated and melted to 1400 ° C. with a high frequency induction heating device in a helium atmosphere of 99% by volume or more. Next, after this molten metal is introduced from the tip of the crucible into a spray tank in a helium gas atmosphere, helium gas (purity 99 vol% or more, oxygen concentration 0.1 vol%) is supplied from a gas nozzle provided near the crucible tip. The second metal particles were produced by performing atomization by ejecting a pressure of less than 2.5 MPa. The cooling rate at this time was 2600 ° C./second.
The obtained second metal particles were classified using an airflow classifier (manufactured by Nissin Engineering Co., Ltd .: TC-15N) at a setting of 5 μm, and then the overcut powder was classified again at a setting of 40 μm. The resulting undercut powder was collected. The recovered second metal particles had a volume average particle size of 7.1 μm. The second metal particles thus obtained were used as samples, and “DSC-50” manufactured by Shimadzu Corporation was used, and the temperature was 30 to 600 ° C. under a nitrogen atmosphere under a temperature rising rate of 10 ° C./min. Differential scanning calorimetry was performed over the range. It was confirmed that the obtained second metal particles had an endothermic peak of 242 ° C. and had a melting point of 232 ° C. (melting start temperature: usually a temperature indicated as a solidus temperature). There was no characteristic exothermic peak.

(3) Melting point change by heat treatment The conductive filler (average particle size of 4.0 μm) obtained by mixing the first metal particles and the second metal particles at a weight ratio of 100: 82 was used as a sample. Differential scanning calorimetry was performed in the range of 30 to 600 ° C. under the condition of a temperature rising rate of 10 ° C./min under a nitrogen atmosphere using “DSC-50”. The DSC chart obtained by this measurement is shown in FIG. As shown in FIG. 2, it was confirmed that endothermic peaks exist at 233 ° C., 352 ° C., and 380 ° C. The endothermic peak at 233 ° C. has a melting point of 221 ° C. (melting start temperature: a temperature indicated as a solidus temperature) and an endothermic amount of 16.4 J / g. Further, a characteristic exothermic peak at 257 ° C. was present.

  Next, 90.0% by mass of the conductive filler and 10.0% by mass of rosin-based flux are mixed, and solder softener (manufactured by Malcolm Co., Ltd .: SPS-1), defoaming kneader (manufactured by Matsuo Sangyo Co., Ltd.) : SNB-350) to produce a bump forming paste. The viscosity was measured with “PCU-205” manufactured by Malcolm Co., Ltd. using the obtained paste for bump formation as a sample. The viscosity was 179 Pa · s and the thixo index was 0.52.

  After applying the above paste for bump formation to an alumina substrate, SRS-1C manufactured by Malcolm Co., Ltd., the conditions up to the preheating zone are 2 ° C./second, the preheating zone is 130 ° C. to 190 ° C. for 110 seconds, and the main heating from the preheating zone The heat treatment was performed in a nitrogen atmosphere with an oxygen concentration of 1000 ppm or less assuming that the temperature was maintained at 2 ° C./second, and the main heating was maintained at 250 ° C. for 15 seconds and 235 ° C. for 30 seconds. Using this heat-treated paste for bump formation as a sample, using a “DSC-50” manufactured by Shimadzu Corporation, a differential scanning in the range of 30 to 600 ° C. under a temperature increase rate of 10 ° C./min in a nitrogen atmosphere. Calorimetry was performed. The DSC chart obtained by this measurement is shown in FIG. As shown in FIG. 3, it was confirmed that endothermic peaks exist at 138 ° C., 175 ° C., 351 ° C., and 430 ° C. Among these, the endothermic peak at 240 ° C. or lower is 138 ° C., 175 ° C., and the endothermic amount is 1.4 J / g. Therefore, the endothermic amount at 50 to 240 ° C. is reduced to 8% of the endothermic amount at the time of melting observed from the endothermic peak area at 210 to 240 ° C. before the heat treatment, and a new stable alloy phase is formed. High heat resistance that does not melt was confirmed.

(4) Bump formation The bump forming paste is printed after hand printing with a metal squeegee using a bump forming metal mask of φ300 μm and thickness of 100 μm on a 2.5 mm × 2.5 mm, 0.25 mm thick Cu substrate. The conditions up to the preheat zone were 2 ° C / second and the preheat zone was 130 ° C with SRS-1C manufactured by Malcolm Co., Ltd. in a state where a glass slide was placed on the four edges on the surface side using a Kapton tape having a thickness of 50 µm. To 190 ° C. for 110 seconds, preheating zone to main heating at 2 ° C./second, main heating at 250 ° C. for 15 seconds, and 235 ° C. for 30 seconds under oxygen atmosphere of 1000 ppm or less in a nitrogen atmosphere. . The bumps thus obtained are shown in FIG. When the cross section of the bump center cut perpendicular to the electrode surface (the difference between the height of the most convex part on the surface and the length of the most concave part on the surface ÷ the length of the bump surface) is 2.2% It was confirmed that a flat bump was formed. As a result of elemental analysis of the bump cross-section using a scanning electron microscope (S-3400N) manufactured by Hitachi High-Technology and an energy dispersive X-ray analyzer (EMAX ENERGY) manufactured by HORIBA, the metal composition was Cu: 35.7% by mass. , Ag: 5.5% by mass, Sn: 53.2% by mass, Bi: 2.8% by mass, and In: 2.8% by mass.

  According to the manufacturing method of the present invention, the bump upper surface of the semiconductor chip with bumps can be easily flattened.

It is a conceptual sectional view showing a manufacturing method of a semiconductor chip with a bump by an embodiment of the invention in order of a process. 6 is a DSC chart obtained by differential scanning calorimetry using a conductive filler obtained by mixing the first metal particles and the second metal particles prepared in Examples at a weight ratio of 100: 82 as a sample. 6 is a DSC chart obtained by differential scanning calorimetry using a bump forming paste after a reflow heat treatment at a peak temperature of 245 ° C. as a sample in a nitrogen atmosphere. This is a result of forming flat bumps on the Cu substrate.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Electrode on semiconductor chip 2 Semiconductor chip 3 Printed solder paste 4 Member having flatness 5 Bump

Claims (5)

  A method for manufacturing a bumped semiconductor chip having a plurality of bumps for electrical connection with the outside, a printing step of printing a solder paste on the electrode surface of the semiconductor chip, and an upper surface of the printed solder paste, A method of manufacturing a semiconductor chip with bumps, comprising: a planarization step of obtaining a bump having a flat upper surface by performing heat treatment while contacting a member having flatness.   The heat treatment is a heat treatment of 235 ° C. or more and 3 seconds or more, and the solder paste contains at least two kinds of metal particles, wherein the first metal particles have at least one exothermic peak in differential scanning calorimetry. And at least one endothermic peak at 300 to 600 ° C, and the second metal particles have no exothermic peak and at least one endothermic peak at 210 to 260 ° C. Method.   A semiconductor chip with bumps manufactured by the method according to claim 1.   4. The bumped semiconductor chip according to claim 3, wherein the bump has a structure having a granular alloy phase that does not melt at 300 [deg.] C.   The average composition ratio of the bumps is Cu: 22 mass% to 36 mass%, Ag: 3 mass% to 6 mass%, Sn: 53 mass% to 71 mass%, Bi: 1 mass% to 3 mass% The semiconductor chip with bumps according to claim 3 or 4, wherein In and 1% by mass or more and 3% by mass or less.