JP2010062229A5 - Semiconductor device and method of manufacturing semiconductor device - Google Patents

Claims (8)

A gate insulating layer over the gate electrode,
A first oxide semiconductor layer in which a channel formation region over the gate insulating layer is formed ;
A second oxide semiconductor layer in which a pair of source and drain regions is formed over the first oxide semiconductor layer;
Anda source and drain electrode layers of the second oxide semiconductor layer,
Said first and said gate insulating layer of the oxide semiconductor layer interposed between the surface and a by pre SL source region opposite to the drain region region, the second oxide semiconductor layer proximate to the area the side end portions, wherein a high oxygen concentration is high resistance region. In claim 1,
The semiconductor device characterized in that the first oxide semiconductor layer has an oxygen concentration higher than that of the second oxide semiconductor layer. In claim 1,
The first oxide semiconductor layer has an amorphous structure,
The semiconductor device characterized in that the second oxide semiconductor layer contains microcrystalline grains in an amorphous structure. In any one of claims 1 to 3,
The first oxide semiconductor layer and the second oxide semiconductor layer is a semiconductor device which comprises indium arm, Gallium, and zinc. Forming a gate insulating layer on the gate electrode;
A first oxide semiconductor layer and a second oxide semiconductor layer are sequentially formed on the gate insulating layer,
A pair of source and drain electrode layers is formed over the second oxide semiconductor layer,
As masking the source and drain electrode layers, etching a portion of the second oxide semiconductor layer and the first oxide semiconductor layer,
30. A method for manufacturing a semiconductor device , comprising increasing the resistance of a surface of the second oxide semiconductor layer exposed by the etching and the surface of the first oxide semiconductor layer by oxygen plasma treatment. In claim 5,
The method for manufacturing a semiconductor device , wherein the oxygen plasma treatment is performed by glow discharge plasma using oxygen gas or a mixed gas of oxygen gas and a rare gas. In claim 5,
The gate insulating layer, the first oxide semiconductor layer, the second oxide semiconductor layer, a method for manufacturing a semiconductor device characterized by forming the source electrode layer and the drain electrode layer by a sputtering method. In claim 5,
The gate insulating layer, the first oxide semiconductor layer, the second oxide semiconductor layer, be formed successively without being exposed to the atmosphere each layer of the source electrode layer and the drain electrode layer by a sputtering method And a method of manufacturing a semiconductor device characterized by