JP2010056423A - 半導体発光素子用電極及び半導体発光素子 - Google Patents

半導体発光素子用電極及び半導体発光素子 Download PDF

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Publication number
JP2010056423A
JP2010056423A JP2008221899A JP2008221899A JP2010056423A JP 2010056423 A JP2010056423 A JP 2010056423A JP 2008221899 A JP2008221899 A JP 2008221899A JP 2008221899 A JP2008221899 A JP 2008221899A JP 2010056423 A JP2010056423 A JP 2010056423A
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Japan
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layer
electrode
semiconductor light
side electrode
light emitting
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JP2008221899A
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Japanese (ja)
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JP2010056423A5 (enExample
Inventor
Satoshi Kamiyama
智 上山
Motoaki Iwatani
素顕 岩谷
Hiroshi Amano
浩 天野
Isamu Akasaki
勇 赤▲崎▼
Ryosuke Kawai
良介 河合
Atsushi Suzuki
敦志 鈴木
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Meijo University
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Meijo University
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Priority to JP2008221899A priority Critical patent/JP2010056423A/ja
Publication of JP2010056423A publication Critical patent/JP2010056423A/ja
Publication of JP2010056423A5 publication Critical patent/JP2010056423A5/ja
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP2008221899A 2008-08-29 2008-08-29 半導体発光素子用電極及び半導体発光素子 Pending JP2010056423A (ja)

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JP2008221899A JP2010056423A (ja) 2008-08-29 2008-08-29 半導体発光素子用電極及び半導体発光素子

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JP2008221899A JP2010056423A (ja) 2008-08-29 2008-08-29 半導体発光素子用電極及び半導体発光素子

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JP2010056423A true JP2010056423A (ja) 2010-03-11
JP2010056423A5 JP2010056423A5 (enExample) 2011-10-13

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012227494A (ja) * 2011-04-22 2012-11-15 Panasonic Corp 窒化物系半導体発光素子およびその製造方法
JP2013161927A (ja) * 2012-02-03 2013-08-19 Stanley Electric Co Ltd 半導体発光素子
US8895419B2 (en) 2011-07-06 2014-11-25 Panasonic Corporation Nitride semiconductor light-emitting element and method for fabricating the same
US9209254B2 (en) 2012-10-01 2015-12-08 Panasonic Intellectual Property Management Co., Ltd. Structure and manufacturing method of the structure, and gallium nitride-based semiconductor light-emitting device using the structure and manufacturing method of the device
KR20160025456A (ko) 2014-08-27 2016-03-08 서울바이오시스 주식회사 발광 다이오드 및 그 제조 방법
WO2016158093A1 (ja) * 2015-03-31 2016-10-06 ウシオ電機株式会社 窒化物半導体発光素子
JP2019009438A (ja) * 2017-06-20 2019-01-17 旭化成エレクトロニクス株式会社 赤外線発光ダイオード

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005031016A1 (ja) * 2003-09-26 2005-04-07 Furuya Metal Co., Ltd. 銀合金、そのスパッタリングターゲット材及びその薄膜

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005031016A1 (ja) * 2003-09-26 2005-04-07 Furuya Metal Co., Ltd. 銀合金、そのスパッタリングターゲット材及びその薄膜

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012227494A (ja) * 2011-04-22 2012-11-15 Panasonic Corp 窒化物系半導体発光素子およびその製造方法
US8895419B2 (en) 2011-07-06 2014-11-25 Panasonic Corporation Nitride semiconductor light-emitting element and method for fabricating the same
JP2013161927A (ja) * 2012-02-03 2013-08-19 Stanley Electric Co Ltd 半導体発光素子
US9209254B2 (en) 2012-10-01 2015-12-08 Panasonic Intellectual Property Management Co., Ltd. Structure and manufacturing method of the structure, and gallium nitride-based semiconductor light-emitting device using the structure and manufacturing method of the device
KR20160025456A (ko) 2014-08-27 2016-03-08 서울바이오시스 주식회사 발광 다이오드 및 그 제조 방법
WO2016158093A1 (ja) * 2015-03-31 2016-10-06 ウシオ電機株式会社 窒化物半導体発光素子
JP2019009438A (ja) * 2017-06-20 2019-01-17 旭化成エレクトロニクス株式会社 赤外線発光ダイオード
JP7233859B2 (ja) 2017-06-20 2023-03-07 旭化成エレクトロニクス株式会社 赤外線発光ダイオード

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