JP2010056301A5 - - Google Patents

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Publication number
JP2010056301A5
JP2010056301A5 JP2008219799A JP2008219799A JP2010056301A5 JP 2010056301 A5 JP2010056301 A5 JP 2010056301A5 JP 2008219799 A JP2008219799 A JP 2008219799A JP 2008219799 A JP2008219799 A JP 2008219799A JP 2010056301 A5 JP2010056301 A5 JP 2010056301A5
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JP
Japan
Prior art keywords
circuit
transistor
mos transistor
channel mos
type
Prior art date
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Granted
Application number
JP2008219799A
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English (en)
Japanese (ja)
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JP2010056301A (ja
JP5394680B2 (ja
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Priority to JP2008219799A priority Critical patent/JP5394680B2/ja
Priority claimed from JP2008219799A external-priority patent/JP5394680B2/ja
Publication of JP2010056301A publication Critical patent/JP2010056301A/ja
Publication of JP2010056301A5 publication Critical patent/JP2010056301A5/ja
Application granted granted Critical
Publication of JP5394680B2 publication Critical patent/JP5394680B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2008219799A 2008-08-28 2008-08-28 半導体集積回路装置 Expired - Fee Related JP5394680B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008219799A JP5394680B2 (ja) 2008-08-28 2008-08-28 半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008219799A JP5394680B2 (ja) 2008-08-28 2008-08-28 半導体集積回路装置

Publications (3)

Publication Number Publication Date
JP2010056301A JP2010056301A (ja) 2010-03-11
JP2010056301A5 true JP2010056301A5 (https=) 2011-07-21
JP5394680B2 JP5394680B2 (ja) 2014-01-22

Family

ID=42071906

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008219799A Expired - Fee Related JP5394680B2 (ja) 2008-08-28 2008-08-28 半導体集積回路装置

Country Status (1)

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JP (1) JP5394680B2 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018125518A (ja) 2017-02-03 2018-08-09 ソニーセミコンダクタソリューションズ株式会社 トランジスタ、製造方法
WO2018142970A1 (ja) * 2017-02-03 2018-08-09 ソニーセミコンダクタソリューションズ株式会社 トランジスタ、製造方法
JP6997501B2 (ja) * 2017-03-24 2022-01-17 旭化成エレクトロニクス株式会社 半導体装置及び半導体装置の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3282375B2 (ja) * 1994-05-25 2002-05-13 株式会社デンソー 相補型絶縁ゲート電界効果トランジスタ
JP2002151599A (ja) * 2000-11-13 2002-05-24 Hitachi Ltd 半導体集積回路装置およびその製造方法
US6747318B1 (en) * 2001-12-13 2004-06-08 Lsi Logic Corporation Buried channel devices and a process for their fabrication simultaneously with surface channel devices to produce transistors and capacitors with multiple electrical gate oxides
JP2003249827A (ja) * 2002-02-26 2003-09-05 Nec Microsystems Ltd 演算増幅器
JP2004039720A (ja) * 2002-07-01 2004-02-05 Seiko Instruments Inc 半導体集積回路装置

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