JP2010056209A - Substrate cleaning device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate cleaning device capable of preventing deposition of organic contaminant on a wafer in a cleaning process because organic matters being a trouble after drying retention are mixed into chemicals used in each process from the atmosphere. <P>SOLUTION: The substrate cleaning device includes: a treatment chamber for cleaning a substrate by chemicals; a support tool for supporting the substrate in the treatment chamber; piping for supplying the chemicals to the substrate in the treatment chamber; a vessel for storing the chemicals supplied to the substrate; and a gas supply system without containing any organic matters for introducing gas without containing any organic matters into the vessel, or exhaust piping for exhausting space at an upper portion of the liquid surface of the chemicals in the vessel. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a substrate cleaning apparatus for cleaning a substrate.

The film formation pattern conditions of a semiconductor substrate such as a silicon wafer are in the direction of miniaturization, and accordingly, various methods have been adopted for the cleaning technique to cope with the miniaturization.
However, it is a known fact that when cleaning a wafer, its surface is very active and it is very difficult to keep the cleaning surface for various reasons.
In addition, in a series of operations in which a wafer is cleaned with a cleaning solution such as an acid and dried through a rinsing process, organic contamination must be dealt with in addition to metal contamination that has been regarded as a problem.

  Further, when cleaning a semiconductor substrate in a substrate cleaning apparatus, one or more kinds of acids or alkalis (for example, hydrofluoric acid, hydrochloric acid, sulfuric acid, ammonia water, hydrogen peroxide water) are mixed, and deionized water (DIW). (SC1 solution: ammonia water and hydrogen peroxide solution mixed with DIW, diluted with DIW, SC2 solution: hydrochloric acid and hydrogen peroxide solution mixed with DIW, etc.) The concentration of these is adjusted in a specific container, or the temperature is controlled to the operating temperature.

  However, in this specific container, the air around the apparatus is sucked into the corresponding container due to pressure fluctuations in the container that occur when adjustment to the target concentration, temperature control, or the like is performed. As a result, organic substances (phthalates, etc.) contained in the atmosphere are included in the cleaning liquid, and the cleaning wafer is organically contaminated with a small amount. Conventionally, this amount of contamination has not been a problem. However, since miniaturization has progressed, the permissible value of the amount of organic contamination has decreased and various adverse effects have occurred.

  An object of the present invention is to prevent adhesion of organic pollutants to a wafer in a cleaning process due to contamination of organic substances or the like which become problematic after drying and remaining in the chemical solution used in each process from the atmosphere.

  According to one aspect of the present invention, a processing chamber for cleaning a substrate with a chemical solution, a support that supports the substrate in the processing chamber, a pipe that stores the chemical solution with respect to the substrate in the processing chamber, and the substrate A container containing the chemical solution to be supplied, and an organic substance-free gas supply system for introducing an organic substance-free gas into the exhaust pipe for exhausting the space above the chemical liquid surface in the container or the container. A substrate cleaning apparatus is provided.

  According to the present invention, it is possible to prevent organic pollutants from adhering to the wafer in the cleaning process due to organic substances or the like that become a problem after drying remaining in the chemical solution used in each process from the atmosphere.

Next, embodiments of the present invention will be described with reference to the drawings.
FIG. 1 is a schematic configuration diagram of a substrate cleaning apparatus 10 used in an embodiment of the present invention.
As shown in FIG. 1, the substrate cleaning apparatus 10 includes a substrate cleaning apparatus body 12, a first chemical solution supply unit 14a, and a second chemical solution supply unit 14b.
The substrate cleaning apparatus main body 12 and the first chemical liquid supply unit 14a are connected by a pipe 16a, and the substrate cleaning apparatus main body 12 and the second chemical liquid supply unit 14b are connected by a pipe 16b.

  Further, the first chemical liquid supply unit 14a includes a raw liquid cabinet 20a for storing the raw liquid container 18a, a chemical liquid adjustment cabinet 28a for storing the weighing container 22a, the concentration adjustment container 24a, and the temperature adjustment container 26a. The chemical liquid adjustment cabinet 28a is connected by a pipe 30a.

  The pipe 30a is connected to the pipe 16a via the weighing container 22a, the pipe 23a, the concentration adjusting container 24a, the pipe 25a, and the temperature adjusting container 26a in the chemical liquid adjusting cabinet 28a.

  That is, the first stock solution stored in the stock solution container 18a in the stock solution cabinet 20a flows through the pipe 30a, and the weighing container 22a, the pipe 23a, the concentration adjustment container 24a, the pipe 25a, and the temperature adjustment container 26a in the chemical solution adjustment cabinet 28a. The concentration and temperature of the chemical solution are controlled so as to satisfy the desired conditions in the process of flowing through the substrate, and further supplied as the first chemical solution into the substrate cleaning apparatus main body 12 via the pipe 16a.

  The second chemical solution supply unit 14b includes a stock solution cabinet 20b for housing the stock solution container 18b, a stock solution cabinet 20c for housing the stock solution container 18c, a weighing container 22b, a weighing container 22c, a concentration adjusting container 24b, and a temperature adjusting container 26b. The raw solution cabinet 20b and the chemical solution adjustment cabinet 28b are connected by a pipe 30b, and the raw solution cabinet 20c and the chemical solution adjustment cabinet 28b are connected by a pipe 30c.

  The pipe 30b is connected to the pipe 16b via the weighing container 22b, the pipe 23b, the concentration adjustment container 24b, the pipe 25b, and the temperature adjustment container 26b in the chemical adjustment cabinet 28b, and the pipe 30c is connected to the chemical adjustment cabinet 28b. It is connected to the pipe 16b through the weighing container 22c, the pipe 23c, the concentration adjusting container 24b, the pipe 25b, and the temperature adjusting container 26b.

  That is, the second stock solution stored in the stock solution container 18b in the stock solution cabinet 20b flows through the pipe 30b, the weighing container 22b, and the pipe 23b, and the third stock solution stored in the stock solution container 18c in the stock solution cabinet 20c is the pipe 30c. The second stock solution and the third stock solution are mixed in the concentration adjusting container 24b, and the chemical concentration and temperature are adjusted in the process of flowing through the pipe 25b and the temperature adjusting container 26b. The second chemical solution is supplied into the substrate cleaning apparatus main body 12 through 16b.

  In FIG. 1, the concentration adjustment container 24a and the temperature adjustment container 26a of the first chemical liquid supply unit 14a, and the concentration adjustment container 24b and the temperature adjustment container 26b of the second chemical liquid supply unit 14b are respectively separate. Sometimes it is done in one. In addition, when the use conditions are fixed, the concentration of the chemical solution is constant, and thus the weighing containers 22a, 22b, 22c and the concentration adjusting containers 24a, 24b may not exist.

FIG. 2 shows the inside of the apparatus main body 12 of the substrate cleaning apparatus 10 used in the embodiment of the present invention.
The substrate cleaning apparatus 10 includes a cleaning apparatus main body (cleaning container) 12, and a cleaning chamber 32 is configured by being surrounded by the cleaning apparatus main body 12. A support 36 for horizontally supporting a substrate 34 such as a semiconductor wafer is disposed in the cleaning chamber 32. The support 36 is connected to a rotation mechanism 38 formed of a motor or the like via a rotation shaft 39, and the rotation mechanism 38 rotates the substrate 34 that is horizontally supported.

  The periphery of the support 36 is surrounded by a cover 40. As will be described later, the cover 40 receives chemicals that fly from the substrate 34 when the substrate 34 is rotated by the support 36.

  A substrate loading / unloading port 42 (see FIG. 1) is formed on the side surface of the cleaning apparatus body 12. The substrate loading / unloading port 42 is provided with a gate valve 44 (see FIG. 1), and the gate loading / unloading port 42 is opened and closed by the gate valve 44. Further, a substrate transfer machine 46 (see FIG. 1) for transferring the substrate 34 to the support 36 through the substrate carry-in / out port 42 is provided.

  A first nozzle 48 and a second nozzle 50 are inserted into the cleaning chamber 32 described above. The first nozzle 48 and the second nozzle 50 are horizontally arranged such that their respective tips extend to near the center of the substrate 34 supported by the support 36. The first nozzle 48 is connected to, for example, the pipe 16 a, and the first chemical liquid is supplied from the first nozzle 48 to the center of the substrate 34. The second nozzle 50 is connected to, for example, the second pipe 16 b, and the second chemical liquid is supplied from the second nozzle 50 to the center of the substrate 34.

  The water supply unit 52 opens around the inner upper portion of the cover 40 described above, and can supply pure water (deionized water) to the inner surface of the cover 40.

  A drain pipe 54 for discharging pure water supplied to the cover 40 is connected to the lower surface of the cover 40, and the drain pipe 54 extends to the outside of the substrate cleaning apparatus body 12, and the drain pipe 54 is connected to the drain pipe 54. Then, the pure water in the cover 40 is discharged. Note that the first chemical solution and the second chemical solution supplied to the substrate 34 are also discharged through the drain pipe 54.

A drying gas supply pipe 56 is connected to the upper portion of the substrate cleaning apparatus main body 12. For example, nitrogen (N ₂ ) is used as the drying gas. Further, an exhaust pipe 58 for discharging the drying gas is connected to the lower part of the substrate cleaning apparatus main body 12.

  The controller 60 is constituted by a computer, and the support 36 is rotated by the rotation mechanism 38, the substrate loading / unloading opening 42 is opened / closed by the gate valve 44, the substrate 34 is loaded / unloaded by the substrate transfer machine 46, and the first nozzle 48 is used. The supply of one chemical solution, the supply of the second chemical solution by the second nozzle 50, the supply of pure water from the water supply unit 52, the supply of gas from the drying gas supply pipe 56, and the like are controlled.

  Next, a method for cleaning a substrate will be described as one step of a semiconductor device (device) manufacturing process using the substrate cleaning apparatus 10 having the above-described configuration.

FIG. 3 is a flowchart showing a control flow by the controller 60.
First, in step S <b> 10, the substrate carry-in / out opening 42 is opened by the gate valve 44, and the substrate 34 on which the pattern is formed is carried into the cleaning chamber 32 by the substrate transfer machine 46.

  In the next step S 12, the substrate transfer machine 46 is further controlled to support (set) the substrate 34 on the support 36, and the substrate loading / unloading port 42 is closed by the gate valve 44.

  In the next step S <b> 14, the rotation of the substrate 34 is started by rotating the support 36 through the rotation shaft 39 by the rotation mechanism 38.

  In the next step S16, as shown in FIG. 4, while maintaining the rotation of the substrate 34, the first chemical solution is supplied from the first nozzle 48 toward the center of the substrate 34 to clean the surface of the substrate 34. To do.

  In the next step S18, as shown in FIG. 5, the supply of the first chemical solution from the first nozzle 48 is stopped while the rotation of the substrate 34 is maintained, and the second chemical solution is supplied from the second nozzle 50. Is supplied toward the center of the substrate 34, and the first chemical remaining on the substrate surface is washed away and rinsed.

In the next step S20, as shown in FIG. 6, while the rotation of the substrate 34 is maintained, the supply of the second chemical solution from the second nozzle 50 is stopped, and the second chemical solution on the substrate is rotated. Sift out with centrifugal force. In step S20, the cleaning chamber 32 is supplied with N ₂ as a drying gas via the drying gas supply pipe 56 and exhausted from the exhaust pipe 58 to make the cleaning chamber 32 an N ₂ atmosphere. _The substrate 34 is dried in _two atmospheres.
In addition, in order to improve safety | security, the supply of the water from the water supply part 52 to the inner surface of the cover 40 is good to carry out continuously from the washing | cleaning process of step S16 or the rinse process of step S18 to the drying process of step S20. That is, it is preferable that pure water is supplied to the inner surface of the cover 40 at least while the first chemical liquid or the second chemical liquid or the like jumps from the substrate 34 to the cover 40.

In the next step S <b> 22, the rotation of the substrate 34 is stopped by stopping the rotation of the support 36 by the rotation mechanism 38. Further, the supply of N ₂ into the cleaning chamber 32 is stopped.

  According to the next step S 24, the gate loading / unloading opening 42 is opened by the gate valve 44, and the substrate 34 is unloaded from the cleaning chamber 32 by the substrate transfer machine 46. Thereafter, the film is transferred to another apparatus, for example, an epitaxial growth apparatus, and processing such as film formation is performed.

In the present invention, an organic non-containing gas supply unit 62 that supplies an organic non-containing gas that is a gas whose organic contamination amount has been controlled in advance is connected to a corresponding portion of the substrate cleaning apparatus 10. Examples of the organic substance-free gas include a combination of one or more of nitrogen, carbon dioxide, oxygen, dry air, hydrogen, water vapor, and rare gases typified by argon.
By connecting the organic substance-free gas supply unit 62 in advance to the corresponding location, it is possible to prevent the chemical liquid from coming into contact with the surrounding atmosphere due to fluctuations in the pressure in the container, and cleaning by mixing organic substances into the chemical liquid from the atmosphere. It is possible to prevent the organic contaminants from adhering to the substrate 34 in the process.
As the corresponding locations, the undiluted solution container 18 which is the undiluted solution containers 18a, 18b and 18c, the weighing container 22 which is the weighing containers 22a, 22b and 22c, the concentration adjusting container 24 which is the concentration adjusting containers 24a and 24b, and the temperature adjusting containers 26a and 26b. A certain temperature control container 26 etc. are mentioned.

  The supply amount of the organic substance-free gas may be a level that can eliminate the pressure fluctuation generated in each container, and the supply itself may be always supplied or supplied only when necessary. In addition, in order to prevent the outside air from flowing in from pipes connected to the exhaust duct, the organic pipes that do not contain organic substances are allowed to flow through the pipes at all times or when necessary. Gas may flow. In consideration of unexpected suction or the like, it is preferable that air flows into the apparatus through a chemical filter (for organic use).

[Example of connection]
7 to 11 show connection examples of the organic substance-free gas supply unit 62 in the embodiment of the present invention.
FIG. 7 shows a first connection example in the embodiment of the present invention. FIG. 8 shows a second connection example in the embodiment of the present invention.
In the first and second connection examples, a concentration / temperature adjustment container 64, which is housed in the chemical liquid adjustment cabinet 28 and the concentration adjustment container 24 and the temperature adjustment container 26 are housed in one container, is used. The example which connected the organic substance non-containing gas supply part 62 to the adjustment container 64 is shown.
Here, an exhaust duct 66 for exhausting the space in the chemical liquid adjustment cabinet 28 is provided above the chemical liquid adjustment cabinet 28.

  In the first connection example, the organic substance-free gas supply unit 62 is connected to the concentration / temperature adjustment container 64 in the chemical solution adjustment cabinet 28 via a pipe 67, a pressure adjustment unit 68, a pipe 69, a flow rate adjustment unit 70, and a pipe 71. Connected to the top. Further, a pipe 72 is connected to the upper part of the concentration / temperature adjustment container 64, and the pipe 72 is connected to an exhaust duct 66 to exhaust the space above the concentration / temperature adjustment container 64.

That is, the organic substance-free gas (for example, N ₂ gas) is accommodated in the chemical liquid adjustment cabinet 28 from the organic substance-free gas supply unit 62 through the pipe 67, the pressure adjustment unit 68, the pipe 69, the flow rate adjustment unit 70, and the pipe 71. The concentration / temperature adjustment container 64 is supplied to the space above the liquid surface of the chemical solution. The organic non-containing gas supplied to the space above the liquid level in the concentration / temperature adjustment container 64 is exhausted from the exhaust duct 66 via a pipe 72 provided on the upper part of the concentration / temperature adjustment container 64. The In this state, the chemical solution in the concentration / temperature adjustment container 64 is supplied from the concentration / temperature adjustment container 64 to the substrate cleaning apparatus body 12 via the pipe 16. That is, by introducing the organic substance-free gas into the concentration / temperature adjustment container 64, the concentration / temperature adjustment container 64 can be maintained in an organic substance-free gas atmosphere, and organic substances and the like are mixed into the chemical solution from the atmosphere. Accordingly, it is possible to prevent organic contaminants from adhering to the substrate 34 during the cleaning process.

  In the second connection example, a pipe 72 for exhausting air above the liquid level in the concentration / temperature adjustment container 64 is connected to the upper portion of the concentration / temperature adjustment container 64, as in the first connection example. The pipe 72 is connected to the exhaust duct 66. In the second connection example, the organic matter-free gas supply unit 62 is connected to the pipe 72 via a pipe 67, a pressure adjustment unit 68, a pipe 69, a flow rate adjustment unit 70, and a pipe 71.

  That is, the organic substance-free gas is supplied from the organic substance-free gas supply unit 62 to the pipe 72 in the chemical liquid adjustment cabinet 28 via the pipe 67, the pressure adjustment unit 68, the pipe 69, the flow rate adjustment unit 70, and the pipe 71, and is exhausted. Exhaust from the duct 66.

Here, when comparing the first connection example and the second connection example, in the first connection example, the organic substance-free gas is directly connected to the concentration / temperature adjustment container 64 in the chemical liquid adjustment cabinet 28. The connection example 2 is limited to the case where the length (capacity) of the pipe 72 connected from the concentration / temperature adjustment container 64 to the duct 66 is sufficient, but is different in that it is connected to the pipe 72 in the chemical solution adjustment cabinet 28. .
Further, in the first connection example and the second connection example, the pipes 67, 69, 71 for connecting the organic substance-free gas supply unit 62 and the concentration / temperature adjustment container 64 and the concentration / temperature adjustment container 64 and the duct 66 are connected. Each of the pipes 72 connected to each other is always open, but a valve 74 or a valve 75, for example, may be provided in the middle of the pipe 72 to supply or exhaust only when necessary. In this case, mainly in the first connection example and the second connection example, the outside air is sucked into the container when the chemical solution is consumed or exhausted. A mechanism for opening and closing the valve 75 may be provided. These controls are performed by the controller 60. The controller controls the operation of each unit constituting the substrate cleaning apparatus 10.

FIG. 9 shows a third connection example in the embodiment of the present invention.
The third connection example shows an example in which the organic substance-free gas supply unit 62 is connected to the stock solution container 18 housed in the stock solution cabinet 20.
In the third connection example, the organic substance-free gas supply unit 62 is a raw solution via a pipe 67, a pressure adjustment unit 68, a pipe 69, a flow rate adjustment unit 70, a pipe 71, a buffer tank 78 in the stock solution cabinet 20, and a pipe 79a. Connected to the container 18.
The buffer tank 78 in the stock solution cabinet 20 is connected to the exhaust duct 66 through a pipe 79b.

That is, the organic substance-free gas is accommodated in the stock solution cabinet 20 from the organic substance-free gas supply unit 62 through the pipe 67, the pressure adjustment unit 68, the pipe 69, the flow rate adjustment unit 70, the pipe 71, the buffer tank 78, and the pipe 79a. The solution is supplied to the space above the liquid level in the stock solution container 18.
Further, the organic matter-free gas is supplied from the organic matter-free gas supply unit 62 to the exhaust duct 66 through the pipe 67, the pressure adjustment unit 68, the pipe 69, the flow rate adjustment unit 70, the pipe 71, the buffer tank 78, and the pipe 79b. The
In this state, the chemical solution in the stock solution container 18 is supplied from the stock solution container 18 to the chemical solution adjustment cabinet 28 via the pipe 30 by the chemical solution supply pump 85.

  In the third connection example, a buffer tank 78 is provided in the middle of supplying the organic substance-free gas so that the organic substance-free gas is not directly blown into the stock solution container 18. This can be omitted depending on the capacity of the pipe 79b connected to the exhaust duct 66. In addition, a valve 74 or a valve 75 may be provided in the pipe 71 or the pipe 79b for supplying the organic substance-free gas. In this case, the outside air is sucked into the container when the chemical solution is supplied. It is preferable to provide a mechanism for opening and closing the valve 74 and the valve 75 by sensing on the side. These controls are performed by the controller 60. The controller 60 controls the operation of each part constituting the substrate cleaning apparatus 10.

FIG. 10 shows a fourth connection example in the embodiment of the present invention.
In the fourth connection example, the organic non-containing gas is supplied to each of the places where the chemical solution and the outside air may come into contact in the cleaning apparatus 10, that is, the stock solution container 18, the weighing container 22, the concentration adjustment container 24, and the temperature adjustment container 26. The unit 62 is connected and an organic non-containing gas is supplied.
That is, the organic substance-free gas supply unit 62 is connected to the undiluted solution container 18 in the undiluted solution cabinet 20 via the piping 67, the pressure adjusting unit 68, the piping 69, the piping 81a, the flow rate adjusting unit 70a, and the piping 83a.
Further, the organic substance-free gas supply unit 62 is connected to the weighing container 22 in the chemical liquid adjustment cabinet 28 through a pipe 67, a pressure adjustment unit 68, a pipe 69, a pipe 81b, a flow rate adjustment unit 70b, and a pipe 83b.
Further, the organic substance-free gas supply unit 62 is connected to the concentration adjustment container 24 in the chemical liquid adjustment cabinet 28 through a pipe 67, a pressure adjustment unit 68, a pipe 69, a pipe 81c, a flow rate adjustment unit 70c, and a pipe 83c. .
Further, the organic substance-free gas supply unit 62 is connected to the temperature adjustment container 26 in the chemical liquid adjustment cabinet 28 via a pipe 67, a pressure adjustment unit 68, a pipe 69, a pipe 81d, a flow rate adjustment unit 70d, and a pipe 83d. .

Therefore, the organic matter-free gas is transferred from the organic matter-free gas supply unit 62 to the stock solution container 18 in the stock solution cabinet 20 through the pipe 67, the pressure adjustment unit 68, the pipe 69, the pipe 81a, the flow rate adjustment unit 70a, and the pipe 83a. Supplied.
Further, the organic substance-free gas is supplied from the organic substance-free gas supply section 62 through the pipe 67, the pressure adjustment section 68, the pipe 69, the pipe 81b, the flow rate adjustment section 70b, and the pipe 83b. To be supplied.
The organic matter-free gas is supplied from the organic matter-free gas supply unit 62 through the pipe 67, the pressure adjustment unit 68, the pipe 69, the pipe 81c, the flow rate adjustment unit 70c, and the pipe 83c. 24.
Further, the organic substance-free gas is supplied from the organic substance-free gas supply section 62 through the pipe 67, the pressure adjustment section 68, the pipe 69, the pipe 81d, the flow rate adjustment section 70d, and the pipe 83d. 26.

  However, depending on the location, the flow rate adjusting units 70a, 70b, 70c, and 70d can be shared or omitted. These controls are performed by the controller 60. The controller 60 controls the operation of each part constituting the substrate cleaning apparatus 10.

FIG. 11 shows a fifth connection example in the embodiment of the present invention.
In the fifth connection example, in addition to the configuration of the fourth connection example, a clean unit 88 is provided in each of the stock solution cabinet 20 and the chemical solution adjustment cabinet 28.
The clean unit 88 includes, for example, a HEPA filter 90, a chemical filter 92, and a fan unit 94 from the surface in contact with the cabinet. By providing this clean unit 88, it is possible to prevent organic matter from entering each cabinet even if unexpected suction or the like occurs. These controls are performed by the controller 60. The controller 60 controls the operation of each part constituting the substrate cleaning apparatus 10.

According to the present invention, it is possible to suppress inhalation of outside air generated in a corresponding container or the like and keep the chemical liquid clean. Therefore, it can be used for substrate cleaning before a film forming process sensitive to the degree of surface cleaning.
Hereinafter, preferred embodiments of the present invention will be additionally described.

  According to one aspect of the present invention, a processing chamber that cleans a substrate with a chemical solution, a support that supports the substrate in the processing chamber, a pipe that supplies the chemical solution to the substrate in the processing chamber, and the substrate A container containing the chemical solution to be supplied, and an organic substance-free gas supply system for introducing an organic substance-free gas into the exhaust pipe for exhausting the space above the chemical liquid surface in the container or the container. A substrate cleaning apparatus is provided.

  Preferably, the container is a chemical stock solution container, a weighing container, a mixing container, a concentration adjusting container, or a temperature adjusting container.

  Preferably, the organic substance-free gas is introduced into a container in which the chemical solution for cleaning the substrate is adjusted to a concentration or temperature corresponding to the use conditions.

  Preferably, an organic substance-free gas is introduced so that the chemical solution for cleaning the substrate is not normally exposed to the atmosphere between the stock solution tank and the container.

  Preferably, the organic substance-free gas is a combination of one or more of nitrogen, carbon dioxide, oxygen, dry air, hydrogen, water vapor, and a rare gas represented by argon.

  Preferably, a controller for controlling the organic matter-free gas supply system is provided so that the organic matter-free gas is constantly supplied.

  Preferably, the apparatus includes a controller that controls the organic substance-free gas supply system so that the organic substance-free gas is supplied in accordance with a change in internal pressure in the container.

It is an example of composition of a substrate cleaning device concerning an embodiment of the present invention. It is sectional drawing which shows the inside of the apparatus main body of the board | substrate cleaning apparatus which concerns on embodiment of this invention. It is a flowchart which shows the control flow by the controller in embodiment of this invention. It is the top view and side view which show the state of the board | substrate washing | cleaning apparatus of the DHF washing | cleaning process in embodiment of this invention. It is the top view and side view which show the state of the board | substrate cleaning apparatus of the rinse process in embodiment of this invention. It is the top view and side view which show the state of the board | substrate cleaning apparatus of the drying process in embodiment of this invention. It is the 1st connection example in embodiment of this invention. It is a 2nd connection example in embodiment of this invention. It is a 3rd connection example in embodiment of this invention. It is a 4th connection example in embodiment of this invention. It is a 5th connection example in embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Substrate cleaning apparatus 12 Substrate cleaning apparatus main body 14 Chemical solution supply part 18 Stock solution container 20 Stock solution cabinet 22 Weighing container 24 Concentration adjustment container 26 Temperature adjustment container 28 Chemical solution adjustment cabinet 32 Cleaning chamber 34 Substrate 36 Supporting tool 38 Rotating mechanism 40 Cover 48 First Nozzle 50 Second nozzle 52 Water supply unit 60 Controller 66 Exhaust duct 68 Pressure adjustment unit 70 Flow rate adjustment unit 78 Buffer tank 85 Chemical solution supply pump 88 Clean unit

Claims (1)

A processing chamber for cleaning the substrate with a chemical solution;
A support for supporting the substrate in the processing chamber;
Piping for supplying a chemical to the substrate in the processing chamber;
A container for storing the chemical solution to be supplied to the substrate;
An organic non-containing gas supply system for introducing an organic non-containing gas into an exhaust pipe for exhausting the space above the chemical liquid level in the container or in the container;
A substrate cleaning apparatus comprising:

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