JP2010050393A - Substrate processing apparatus, substrate processing method, program, and storage medium - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate processing apparatus in which the installation space of a valve provided to each chemical supply source is reduced, and to provide a substrate processing method, a program, and a storage medium. <P>SOLUTION: An upstream-side end and a downstream-side end of a second line 44 are respectively connected to a first line 22 connected to a processing unit 10 which processes a wafer W. The second line 44 branches off into a plurality of third lines (a hydrogen peroxide solution supply line 42, an aqueous ammonium supply line 48, a hydrochloric acid supply line 52, and a hydrofluoric acid supply line 56). Those third lines have valves 42a, 48a, 52a, 56a interposed at positions of branching from the second line 44, respectively. Chemical supply sources (a hydrogen peroxide solution supply source 41, an aqueous ammonium supply source 46, a hydrochloric acid supply source 50, and a hydrofluoric acid supply source 54) are connected to the respective third lines. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus that performs chemical processing and rinsing processing of a substrate, a substrate processing method using the substrate processing apparatus, a program that can be executed by a control computer of the substrate processing apparatus, and a storage medium that stores the program. In particular, the present invention relates to a substrate processing apparatus, a substrate processing method, a program, and a storage medium that can reduce the installation space of a valve provided in each chemical solution supply source.

  2. Description of the Related Art Conventionally, substrate processing apparatuses that perform chemical processing or rinsing processing of a substrate are known. As an example of the substrate processing apparatus, one disclosed in, for example, Patent Document 1 is known.

  A configuration of a conventional substrate processing apparatus as disclosed in Patent Document 1 will be described with reference to FIG. As shown in FIG. 2, a conventional substrate processing apparatus 80 is provided with a processing tank 81 that stores a wafer W and performs a chemical solution process and a rinsing process on the stored wafer W. For example, four supply nozzles 81 a are arranged on the inner wall surface of the processing tank 81. Each supply nozzle 81a is formed of a cylindrical supply pipe, and a plurality of discharge holes for discharging a processing liquid such as pure water or a chemical liquid are provided on the cylindrical surface. By discharging a treatment liquid such as pure water or a chemical solution from the plurality of discharge holes formed in each supply nozzle 81 a to the treatment tank 81, the treatment liquid is stored in the treatment tank 81 and stored in the treatment tank 81. The surface treatment of the wafer W is performed by immersing the wafer W in the treatment liquid.

  In addition, a recovery unit 81 b is provided on the outer wall surface of the upper end of the processing tank 81, and the recovery unit 81 b recovers the processing liquid overflowing from the upper end of the processing tank 81. The processing liquid recovered by the recovery unit 81b is sent again to the supply nozzles 81a by the circulation pump 82. In this way, the treatment liquid in the treatment tank 81 is circulated by the circulation pump 82.

  On the other hand, a new liquid supply line 80a for supplying a new processing liquid to the processing tank 81 is provided with a plurality of liquid supply sources and valves. Specifically, as shown in FIG. 2, new pure water can be supplied from the pure water supply source 85 to the treatment tank 81 by opening the valve 83 and the valve 84. The supply amount of pure water is adjusted by the regulator 85a. Further, by opening the valve 83 and the valve 86, a cleaning liquid such as ozone water or hydrogen water can be supplied from the cleaning liquid supply source 87 to the processing tank 81. The flow meter 83a measures the flow rate of pure water or cleaning water passing therethrough.

Also, hydrochloric acid is supplied from the hydrochloric acid (HCl) supply source 91 by opening the valve 91a, ammonia water is supplied from the ammonia water (NH ₄ OH) supply source 92 by opening the valve 92a, and hydrofluoric acid (HF is supplied by opening the valve 93a. ) Hydrofluoric acid from the supply source 93 and hydrogen peroxide solution from the hydrogen peroxide solution (H ₂ O ₂ ) supply source 94 can be supplied to the treatment tank 81 by opening the valve 94a. The supply amount of each of hydrochloric acid, ammonia water, hydrofluoric acid, and hydrogen peroxide water can be adjusted by the flow rate adjusting valves 91b, 92b, 93b, 94b. The valves 91a, 92a, 93a, 94a are configured as an integral mixing valve. The configuration of such an integrated mixing valve is disclosed in, for example, Patent Document 2. The structure of the integrated mixing valve will be described below with reference to FIG.

  The integrated mixing valve 110 as shown in FIG. 3 has a plurality of (two in FIG. 3) sub-channels 114 (first sub-channel 114A and second sub-channel 114B) with respect to the main channel 113. The communication openings 118A and 118B are connected via opening / closing valve parts 120A and 120B. Pressure sensors 131, 132, and 133 are disposed in the main channel 113 and the sub channels 114A and 114B, respectively. In FIG. 3, reference numeral 111 indicates a main body block, and reference numeral 112 indicates a valve block.

  The main channel 113 is a channel through which the first fluid (for example, pure water) f1 flows, and is provided so as to penetrate substantially horizontally in the longitudinal direction of the main body block 111 formed in a substantially rectangular parallelepiped as shown in FIG. ing. Both ends of the main channel 113 are connected to external piping or fluid equipment via connection members (not shown) as connection openings 113a (upstream side) and 113b (downstream side). In the main channel 113, a pressure sensor 131 that detects the pressure of the mixed fluid m flowing through the main channel 113 is disposed on the downstream (113b) side of the communication openings 118A and 118B of the sub channels 114A and 114B. The

  The sub flow channel 114 (the first sub flow channel 114A and the second sub flow channel 114B) is a flow channel through which the second fluid f2 and the third fluid f3, which are other fluids (here, various chemical solutions) circulate. Each is formed below the path 113. The first sub-channel 114A and the second sub-channel 114B supply the second fluid f2 and the third fluid f3 upward to the main channel 113 through the communication openings 118A and 118B, respectively. It has become. In each of the sub-channels 114A and 114B, throttle portions 117A and 117B in which the channel diameter is once narrowed are formed. The throttle portions 117A and 117B form pressure loss portions for the fluids f2 and f3 flowing through the sub-channels 114A and 114B. Reference numerals 115A and 115B in FIG. 3 are connection openings to the external pipes and the like of the sub-channels 114A and 114B.

  The first sub-channel 114A has a pressure sensor 132 that detects the pressure of the second fluid f2 flowing through the first sub-channel 114A, and the second sub-channel 114B has the second sub-channel 114B. Pressure sensors 133 for detecting the pressure of the third fluid f3 flowing through the inside are arranged.

  The on-off valve portions 120A and 120B are disposed above the communication openings 118A and 118B of the main flow path 113, and the valve body 124 moves back and forth across the main flow path 113 by the operation of air or the like by a control device (not shown). Corresponding communication openings 118A and 118B are opened and closed from the inside of the main flow path 113, and the fluids f2 and f3 flowing in from the sub flow paths 114A and 114B are supplied into the main flow path 113 or the supply is stopped. . In FIG. 3, reference numeral 121 is a cylinder, reference numeral 122 is a piston, reference numeral 126 is a valve seat formed in the communication openings 118A and 118B, reference numeral 127 is a diaphragm, reference numeral 128 is a valve body 124 always in the forward direction. It is a spring that urges against.

  In the integrated mixing valve 110 as shown in FIG. 3, the first fluid f1 flowing from the upstream (113a) side of the main channel 113 is supplied from the sub channels 114A and 114B, respectively. And flows out from the downstream (113b) side of the main flow path 113 as a mixed fluid m.

  In the substrate processing apparatus 80 as shown in FIG. 2, the new liquid supply line 80 a can supply a plurality of types of new processing liquids to the processing tank 81. For example, the valve 92a, the valve 94a, the valve 84, and the valve 83 are opened, and ammonia water and hydrogen peroxide water can be mixed with pure water and supplied to the treatment tank 81. In addition, by opening the valve 91a, the valve 94a, the valve 84, and the valve 83, hydrochloric acid and hydrogen peroxide solution can be mixed with pure water and supplied to the treatment tank 81. When supplying a mixed solution of ammonia water and hydrogen peroxide solution or a mixed solution of hydrochloric acid and hydrogen peroxide solution to the treatment tank 81, the chemical solution is mixed with the pure water heated and heated by the heater 85b. There are many cases.

  The new liquid supply line 80 a can also supply functional water such as ozone water or hydrogen water to the treatment tank 81. The cleaning liquid supply source 87 has a function of dissolving ozone or the like in pure water to generate ozone water or the like having a predetermined concentration. The ozone water or the like generated by opening the valve 86 is supplied to the treatment tank 81. Can be supplied. The flow rate of ozone water or the like is measured by the flow meter 83 a and is adjusted by opening and closing the valve 86.

JP 2002-100605 A JP 2005-207496 A

  However, in the new solution supply line 80a of the conventional substrate processing apparatus 80 as shown in FIG. 2, each chemical solution supply source (hydrochloric acid supply source 91, ammonia water supply source 92, hydrofluoric acid supply source 93 and hydrogen peroxide solution supply) Each chemical solution supply line to which various chemical solutions are supplied from the source 94) is directly connected to a main line 88 that supplies a cleaning solution such as pure water, ozone water, hydrogen water to the treatment tank 81. As described above, the valves 91a, 92a, 93a, 94a provided at the branch points from the main line 88 to the respective chemical solution supply lines are configured as an integral mixing valve.

  In the integrated mixing valve, four sub flow paths 91c, 92c, 93c, 94c are connected to the main line 88 via valves 91a, 92a, 93a, 94a. The valves 91a, 92a, 93a, and 94a open and close the four sub flow paths 91c, 92c, 93c, and 94c with respect to the main line 88.

  Here, the diameter of the main line 88 for supplying a cleaning liquid such as pure water, ozone water or hydrogen water to the treatment tank 81 is large. For this reason, the diameters of the valves 91a, 92a, 93a, and 94a constituting the integrated mixing valve are also increased.

  Thus, the conventional substrate processing apparatus 80 as shown in FIG. 2 corresponds to each chemical solution supply source (hydrochloric acid supply source 91, ammonia water supply source 92, hydrofluoric acid supply source 93, and hydrogen peroxide solution supply source 94). Since the valves 91a, 92a, 93a, and 94a provided in this manner are increased in size, the installation space for these valves 91a, 92a, 93a, and 94a is increased.

  The present invention has been made in consideration of such points, and provides a substrate processing apparatus, a substrate processing method, a program, and a storage medium that can reduce the installation space of a valve provided in each chemical solution supply source. For the purpose.

  The substrate processing apparatus of the present invention is a first line that is connected to each of a processing unit that processes a substrate, the processing unit and a water supply source, and supplies water sent from the water supply source to the processing unit. A second line in which each of an upstream end and a downstream end is connected to the first line, and a plurality of third lines branched from the second line, the second line A plurality of third lines each provided with a valve at a branch point from the line, and a plurality of chemical liquid supply sources respectively connected to the third lines, each of the chemical liquid supply sources being And a plurality of chemical liquid supply sources for supplying chemical liquids to the third line.

  According to such a substrate processing apparatus, the upstream end and the downstream end of the second line are connected to the first line connected to the processing unit for processing the substrate, respectively. A plurality of third lines are branched from these lines, and valves are interposed in these third lines at the branch points from the second lines, respectively, A chemical solution supply source is connected, and the chemical solution is supplied to each third line from these chemical solution supply sources. Thus, the upstream end and the downstream end of the second line are connected to the first line, respectively, and this second line functions as a so-called bypass path of the first line. The diameter of the second line can be made smaller than the diameter of the first line, and the diameter of each valve interposed in the third line is substantially the same as or smaller than the diameter of the second line. It can be a size. Thereby, the diameter of each valve interposed in the third line can be made smaller than the diameter of the first line, and the installation space of the valve interposed in the chemical solution supply line can be reduced. .

In the substrate processing apparatus of the present invention, each of the chemical liquid supply sources is a hydrogen peroxide solution (H ₂ O ₂ ) supply source, a hydrofluoric acid (HF) supply source, a hydrochloric acid (HCl) supply source, or ammonia water (NH _4). OH) source is preferred.

  The substrate processing method of the present invention includes a processing unit for processing a substrate, a first line connected to the processing unit and a water supply source, and supplying water sent from the water supply source to the processing unit. A second line in which each of an upstream end and a downstream end is connected to the first line, and a plurality of third lines branched from the second line, the second line A plurality of third lines each provided with a valve at a branch point from the line, and a plurality of chemical liquid supply sources respectively connected to the third lines, each of the chemical liquid supply sources being A substrate processing method in a substrate processing apparatus, comprising: a plurality of chemical liquid supply sources that respectively supply chemical liquids to a third line, wherein each of the third lines and the second line is controlled by each of the chemical liquid supply sources. The process via the line and the first line Supplying a chemical solution to the substrate and performing a chemical solution treatment on the substrate in the processing unit; and after performing the chemical solution treatment on the substrate, the water supply source causes the processing unit to pass through the first line and the second line. And a step of rinsing the substrate in the processing section.

  The program of the present invention includes a processing unit for processing a substrate, a first line connected to the processing unit and a water supply source, respectively, and supplying water sent from the water supply source to the processing unit, A second line in which each of an upstream end and a downstream end is connected to the first line, and a plurality of third lines branched from the second line, wherein the second line A plurality of third lines each provided with a valve at a branch point thereof, and a plurality of chemical liquid supply sources respectively connected to the third lines, each of the chemical liquid supply sources being the third line. A program that can be executed by a control computer of a substrate processing apparatus that includes a plurality of chemical solution supply sources that supply a chemical solution to each of the lines. By executing the program, the control computer The group In the method of controlling a processing apparatus to execute a substrate processing method, the substrate processing method is configured to perform the processing through the third line, the second line, and the first line by the chemical solution supply sources. A chemical solution is supplied to the processing unit, and the chemical processing of the substrate is performed in the processing unit; and after the chemical processing of the substrate is performed, water is supplied to the processing unit via the first line by the water supply source. And a step of rinsing the substrate in the processing section.

  The storage medium of the present invention includes a processing unit for processing a substrate, a first line connected to the processing unit and a water supply source, respectively, and supplying water sent from the water supply source to the processing unit. A second line in which each of an upstream end and a downstream end is connected to the first line, and a plurality of third lines branched from the second line, wherein the second line A plurality of third lines each provided with a valve at a branch point from the line, and a plurality of chemical liquid supply sources respectively connected to the third lines, each of the chemical liquid supply sources being A storage medium that stores a program that can be executed by a control computer of a substrate processing apparatus that includes a plurality of chemical liquid supply sources that respectively supply chemical liquids to the three lines, and executes the program The control command The computer controls the substrate processing apparatus to execute the substrate processing method. In the substrate processing method, each of the third line, the second line, and the first line is controlled by each chemical solution supply source. A chemical solution is supplied to the processing unit via the substrate, and the substrate is subjected to the chemical solution processing. After the substrate chemical processing is performed, the water supply source supplies the processing unit to the processing unit via the first line. A step of supplying water and rinsing the substrate in the processing section.

  According to the substrate processing apparatus, the substrate processing method, the program, and the storage medium of the present invention, it is possible to reduce the installation space of the valve provided in each chemical solution supply source.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a diagram showing a substrate processing apparatus according to the present embodiment. More specifically, FIG. 1 is a configuration diagram showing an outline of the configuration of the substrate processing apparatus in the present embodiment.

  As shown in FIG. 1, the substrate processing apparatus 1 according to the present embodiment includes a processing tank 10 that stores a wafer W and performs a chemical solution process and a rinse process on the stored wafer W. For example, four supply nozzles 12 and 18 are arranged on the inner wall surface of the processing tank 10. Each of the supply nozzles 12 and 18 includes a cylindrical supply pipe, and a plurality of discharge holes for discharging a processing liquid such as pure water or a chemical liquid are provided on the cylindrical surface. By discharging a processing liquid such as pure water or a chemical solution from the plurality of discharge holes formed in the supply nozzles 12 and 18 to the processing tank 10, the processing liquid is stored in the processing tank 10 and stored in the processing tank 10. The surface treatment of the wafer W is performed by immersing the wafer W in the treated liquid.

  Of the four supply nozzles 12 and 18 arranged on the inner wall surface of the processing tank 10, the pair of left and right supply nozzles 12 at the upper part of the processing tank 10 are connected to the supply pipe 14. Then, the processing liquid is supplied from the supply pipe 14 to each supply nozzle 12. As shown in FIG. 1, a valve 14 a is interposed in the supply pipe 14. Similarly, of the four supply nozzles 12 and 18 disposed on the inner wall surface of the processing tank 10, the pair of left and right supply nozzles 18 at the lower part of the processing tank 10 are connected to the supply pipe 20. Then, the processing liquid is supplied from the supply pipe 20 to each supply nozzle 18. As shown in FIG. 1, a valve 20 a is interposed in the supply pipe 20. Then, the supply pipe 14 and the supply pipe 20 merge, and the first line 22 is connected to this junction. That is, the processing liquid is supplied from the first line 22 to the supply pipes 14 and 20, respectively. The diameter of the piping of the first line 22 is about 1.5 inches, for example.

The upstream end of the first line 22 is supplied with a pure water (DIW) supply source 30, an ozone water (O ₃ W) supply source 32, and hot water (HDIW, more strictly heated pure water). Each source 34 is provided. More specifically, a pure water supply line 36 is connected to the pure water supply source 30, and pure water is supplied from the pure water supply source 30 to the pure water supply line 36. The diameter of the pure water supply line 36 is about 1.5 inches, for example. As shown in FIG. 1, the pure water supply line 36 is branched into two pipes. A valve 36a is provided for each of the two branched pipes. Here, the diameter of the two branched pipes is about 1 inch, for example, and the diameter of the valve 36a is also about 1 inch, for example.

  An ozone water supply line 38 is connected to the ozone water supply source 32, and ozone water is supplied from the ozone water supply source 32 to the ozone water supply line 38. The ozone water supply line 38 is provided with a valve 38a. The diameter of the ozone water supply line 38 is about 1 inch, for example, and the diameter of the valve 38a is also about 1 inch, for example. A hot water supply line 40 is connected to the hot water (HDIW) supply source 34, and heated water is supplied from the hot water supply source 34 to the hot water supply line 40. . The hot water supply line 40 is provided with a valve 40a. The diameter of the hot water supply line 40 is about 1 inch, for example, and the diameter of the valve 40a is also about 1 inch, for example.

  The two pipes branched from the pure water supply line 36, the ozone water supply line 38 and the hot water supply line 40 join at one place, and the upstream end of the first line 22 is connected to this joining place. Yes. That is, pure water, ozone water, and hot water are supplied to the first line 22 from the pure water supply source 30, the ozone water supply source 32, and the hot water supply source 34, respectively.

  As shown in FIG. 1, a valve 22 a is interposed in the first line 22. Here, the diameter of the first line 22 is about 1.5 inches, for example, and the diameter of the valve 22a is also about 1.5 inches, for example.

  As shown in FIG. 1, the upstream end and the downstream end of the second line 44 are each connected to the first line 22. Here, the second line 44 functions as a so-called bypass path of the first line 22.

The diameter of the second line 44 is smaller than the diameter of the first line 22, and specifically, for example, 3/8 inch or 0.5 inch. From the second line 44, a hydrogen peroxide solution (H ₂ O ₂ ) supply line 42, an ammonia water (NH ₄ OH) supply line 48, a hydrochloric acid (HCl) supply line 52, and a hydrofluoric acid (HF) supply line 56 each branch. A hydrogen peroxide solution supply line 41 is connected to the hydrogen peroxide solution supply line 42, and the hydrogen peroxide solution is supplied from the hydrogen peroxide solution supply source 41 to the hydrogen peroxide solution supply line 42. ing. An ammonia water supply source 46 is connected to the ammonia water supply line 48, and ammonia water is supplied from the ammonia water supply source 46 to the ammonia water supply line 48. A hydrochloric acid supply source 50 is connected to the hydrochloric acid supply line 52, and hydrochloric acid is supplied from the hydrochloric acid supply source 50 to the hydrochloric acid supply line 52. A hydrofluoric acid supply source 54 is connected to the hydrofluoric acid supply line 56, and hydrofluoric acid is supplied from the hydrofluoric acid supply source 54 to the hydrofluoric acid supply line 56. These hydrogen peroxide solution supply line 42, ammonia solution supply line 48, hydrochloric acid supply line 52 and hydrofluoric acid supply line 56 constitute a third line.

  Valves 42 a, 48 a, 52 a, and 56 a are respectively provided at connection points of the hydrogen peroxide solution supply line 42, the ammonia solution supply line 48, the hydrochloric acid supply line 52, and the hydrofluoric acid supply line 56 with the second line 44. Yes. Here, the valves 42 a, 48 a, 52 a, 56 a are configured as an integral mixing valve as shown in FIG. 3, and the diameters of these valves 42 a, 48 a, 52 a, 56 a are the same as the diameter of the second line 44. Similarly, for example, it is about 3/8 inch or 0.5 inch. Note that some or all of these valves 42 a, 48 a, 52 a, 56 a do not constitute an integral mixing valve, and the diameter of the valves that do not constitute such an integral mixing valve is the second line 44. It may be smaller than the diameter.

  Further, the substrate processing apparatus 1 is provided with a control unit 70 including a control computer that controls various components in the substrate processing apparatus 1. The control unit 70 is connected to each component of the substrate processing apparatus 1, and the control unit 70 controls chemical processing and rinsing processing of the wafer W in the processing tank 10. More specifically, the control unit 70 controls the supply of pure water, chemicals, and the like from each supply source 30, 32, 34, 41, 46, 50, 54, and each valve 14a, 20a, 22a, 36a. , 38a, 40a, 42a, 48a, 52a, and 56a are controlled. The details of the control of each component of the substrate processing apparatus 1 by the control unit 70 will be described later. In the present embodiment, the control unit 70 includes a keyboard that allows a process manager to input commands to manage the substrate processing apparatus 1, a display that visualizes and displays the operating status of the substrate processing apparatus 1, and the like. A data input / output unit 71 is connected. In addition, the control unit 70 performs processing on each component of the substrate processing apparatus 1 in accordance with a control program for realizing various processes executed by the substrate processing apparatus 1 through control by the control unit 70 and processing conditions. A storage medium 72 that stores a program to be executed (that is, a recipe) is connected. The storage medium 72 may be configured from a memory such as a ROM or a RAM, a disk-shaped storage medium such as a hard disk, a CD-ROM, or a DVD-ROM, or other known storage media.

  Then, if necessary, an arbitrary recipe is called from the storage medium 72 by an instruction from the data input / output unit 71 and is executed by the control unit 70, so that the substrate processing apparatus 1 controls the control unit 70. The desired processing is performed.

  Next, a method for processing the wafer W using the substrate processing apparatus 1 as described above will be described. A series of chemical liquid processing and rinsing processing as described below is performed by the control unit 70 controlling each component of the substrate processing apparatus 1 according to a program (recipe) stored in the storage medium 72.

  First, a standby state before the chemical solution process or the rinse process is performed on the wafer W in the processing tank 10 will be described. In such a standby state, the valves 36a, 22a, 20a are opened by the control unit 70, and pure water is supplied from the pure water supply source 30 to the pure water supply line 36, whereby the first line 22, Pure water is supplied into the processing tank 10 by the supply nozzle 18 via the second line 44 and the supply pipe 20.

  Next, chemical processing is performed on the wafer W in the processing tank 10. There are various modes of such chemical processing, but in the first mode of chemical processing, the valves 36a, 22a, 56a, 20a, and 14a are opened by the control unit 70, and pure water is supplied from the pure water supply source 30. Pure water is supplied to the line 36 and hydrofluoric acid is supplied from the hydrofluoric acid supply source 54 to the hydrofluoric acid supply line 56. The hydrofluoric acid supplied from the hydrofluoric acid supply source 54 is diluted with pure water in the second line 44, and the hydrofluoric acid diluted with pure water is processed by the supply nozzles 12 and 18 through the supply pipes 14 and 20. It will be supplied into the tank 10. As a result, hydrofluoric acid diluted with pure water is supplied to the surface of the wafer W accommodated in the processing tank 10, and chemical treatment of the surface of the wafer W is performed.

  Next, a second aspect of the chemical solution process will be described. In the second aspect of the chemical treatment, the valves 40a, 22a, 42a, 48a, 20a are opened by the control unit 70, hot water is supplied from the hot water supply source 34 to the hot water supply line 40, and hydrogen peroxide solution Hydrogen peroxide solution is supplied from the supply source 41 to the hydrogen peroxide solution supply line 42, and ammonia water is supplied from the ammonia solution supply source 46 to the ammonia solution supply line 48. The hydrogen peroxide solution supplied from the hydrogen peroxide solution supply source 41 is diluted with hot water in the second line 44, and the hydrogen peroxide solution diluted with hot water is combined with ammonia water in the second line 44. Mix. Then, the mixed solution of hydrogen peroxide water and ammonia water is supplied into the treatment tank 10 by the supply nozzle 18 through the supply pipe 20. As a result, a mixed liquid of hydrogen peroxide water and ammonia water is supplied to the surface of the wafer W accommodated in the processing tank 10, and chemical treatment of the surface of the wafer W is performed.

  Next, the 3rd aspect of a chemical | medical solution process is demonstrated. In the third aspect of the chemical treatment, the valves 36a, 38a, 22a, 56a, 14a, 20a are opened by the control unit 70, and pure water is supplied from the pure water supply source 30 to the pure water supply line 36 and ozone is supplied. Ozone water is supplied from the water supply source 32 to the ozone water supply line 38, and hydrofluoric acid is supplied from the hydrofluoric acid supply source 54 to the hydrofluoric acid supply line 56. The ozone water supplied from the ozone water supply source 32 is diluted with pure water in the first line 22, and the ozone water diluted with pure water is mixed with hydrofluoric acid in the second line 44. The mixed solution of ozone water and hydrofluoric acid is supplied into the treatment tank 10 by the supply nozzles 12 and 18 through the supply pipes 14 and 20. As a result, a mixed liquid of ozone water and hydrofluoric acid is supplied to the surface of the wafer W accommodated in the processing tank 10, and a chemical solution process is performed on the surface of the wafer W.

  Next, the rinsing process of the wafer W after the chemical liquid process of the wafer W as described above is performed will be described. There are various modes for rinsing the wafer W. In the first mode of rinsing, the valves 36 a, 22 a, 14 a, and 20 a are opened by the control unit 70, and the pure water supply line 30 supplies the pure water supply line 36. Is supplied with pure water. The first line 22 and the second line 44 are cleaned with pure water supplied from the pure water supply source 30. The pure water is finally supplied into the treatment tank 10 by the supply nozzles 12 and 18 through the supply pipes 14 and 20. As a result, pure water is supplied to the surface of the wafer W accommodated in the processing tank 10, and the surface of the wafer W is rinsed.

  Next, the 2nd aspect of the rinse process is demonstrated. In the second aspect of the rinsing process, the valves 40 a, 22 a, and 20 a are opened by the control unit 70, and pure water heated from the hot water supply source 34 is supplied to the hot water supply line 40. The first line 22 and the second line 44 are cleaned by the hot water supplied from the hot water supply source 34. The heated pure water is finally supplied into the treatment tank 10 by the supply nozzle 18 through the supply pipe 20. As a result, pure water is supplied to the surface of the wafer W accommodated in the processing tank 10, and the surface of the wafer W is rinsed.

  As described above, according to the substrate processing apparatus 1 and the substrate processing method of the present embodiment, the upstream end of the second line 44 is connected to the first line 22 connected to the processing tank 10 for processing the wafer W. The second end 44 is connected to a plurality of third lines (hydrogen peroxide solution supply line 42, ammonia solution supply line 48, hydrochloric acid supply line 52, and hydrofluoric acid supply line 56. ), And these third lines are respectively provided with valves 42a, 48a, 52a, 56a at the branch points from the second line 44. The chemical liquid supply sources (hydrogen peroxide water supply source 41, ammonia water supply source 46, hydrochloric acid supply source 50, and hydrofluoric acid supply source 54) are connected to each third line from these chemical liquid supply sources. Liquid is to be supplied. As described above, the upstream end and the downstream end of the second line 44 are connected to the first line 22, respectively, and the second line 44 functions as a so-called bypass path of the first line 22. Therefore, the diameter of the second line 44 can be made smaller than the diameter of the first line 22, and the diameter of each valve 48a, 52a, 56a interposed in the third line can be set to the second. The diameter of the line 44 can be approximately the same as or smaller than the diameter. As a result, the diameter of each valve 42a, 48a, 52a, 56a interposed in the third line can be made smaller than the diameter of the first line 22, and the chemical solution supply line (third line) The installation space for the interposed valve can be reduced.

  In addition, the substrate processing apparatus 1 and the substrate processing method by this invention are not limited to said aspect, A various change can be added. For example, in the substrate processing apparatus 1 as shown in FIG. 1, the installation of the ozone water supply source 32 and the hot water supply source 34 can be omitted. The chemical solution supply line connected to the second line 44 is not limited to the hydrogen peroxide solution supply line 42, the ammonia solution supply line 48, the hydrochloric acid supply line 52, and the hydrofluoric acid supply line 56. It may be a chemical solution supply line to which a chemical solution supply source that supplies the type of chemical solution is connected.

It is a block diagram which shows the outline of a structure of the substrate processing apparatus in one embodiment of this invention. It is a block diagram which shows the outline of a structure of the conventional substrate processing apparatus. It is a figure which shows the structure of an integrated mixing valve.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 10 Processing tank 12 Supply nozzle 14 Supply pipe 14a Valve 18 Supply nozzle 20 Supply pipe 20a Valve 22 First line 22a Valve 30 Pure water supply source 32 Ozone water supply source 34 Hot water supply source 36 Pure water supply line 36a Valve 38 Ozone water supply line 38a Valve 40 Hot water supply line 40a Valve 41 Hydrogen peroxide water supply source 42 Hydrogen peroxide water supply line 42a Valve 44 Second line 46 Ammonia water supply source 48 Ammonia water supply line 48a Valve 50 Hydrochloric acid supply source 52 Hydrochloric acid supply line 52a Valve 54 Hydrofluoric acid supply source 56 Hydrofluoric acid supply line 56a Valve 70 Control unit 71 Data input / output unit 72 Storage medium 80 Substrate processing apparatus 80a New liquid supply line 81 Processing tank 81a Supply nozzle 81b Recovery unit 82 Circulation pump 83 Valve 83a Flow Meter 84 Valve 85 Pure water supply source 85a Regulator 85b Heater 86 Valve 87 Cleaning liquid supply source 88 Main line 91 Hydrochloric acid supply source 91a Valve 91b Flow rate adjustment valve 91c Sub-flow channel 92 Ammonia water supply source 92a Valve 92b Flow rate adjustment valve 92c Flow path 93 Hydrofluoric acid supply source 93a Valve 93b Flow rate adjustment valve 93c Sub flow path 94 Hydrogen peroxide solution supply source 94a Valve 94b Flow rate adjustment valve 94c Sub flow path 110 Integrated mixing valve W Wafer

Claims (5)

A processing unit for processing a substrate;
A first line connected to the treatment unit and a water supply source, respectively, for supplying water sent from the water supply source to the treatment unit;
A second line in which each of an upstream end and a downstream end is connected to the first line;
A plurality of third lines branched from the second line, and a plurality of third lines each having a valve interposed at a branch point from the second line;
A plurality of chemical liquid supply sources respectively connected to the respective third lines, wherein the respective chemical liquid supply sources each supply a chemical liquid to each of the third lines;
A substrate processing apparatus comprising: Each of the chemical liquid supply sources is a hydrogen peroxide solution (H ₂ O ₂ ) supply source, a hydrofluoric acid (HF) supply source, a hydrochloric acid (HCl) supply source, or an ammonia water (NH ₄ OH) supply source. The substrate processing apparatus according to claim 1. A first processing unit configured to process a substrate; a first line connected to the processing unit and a water supply source; and supplying water sent from the water supply source to the processing unit; and the first line A second line to which each of the upstream end and the downstream end is connected, and a plurality of third lines branched from the second line, each at a branch point from the second line A plurality of third lines provided with valves, and a plurality of chemical liquid supply sources connected to the respective third lines, each of the chemical liquid supply sources supplying a chemical liquid to the respective third lines. A substrate processing method in a substrate processing apparatus comprising a plurality of chemical liquid supply sources to supply,
Supplying a chemical solution to the processing unit via the third line, the second line, and the first line by the chemical solution supply sources, and performing a chemical process on the substrate in the processing unit;
A step of supplying water to the processing unit through the first line and the second line by the water supply source after performing chemical treatment of the substrate, and rinsing the substrate in the processing unit;
A substrate processing method comprising: A first processing unit configured to process a substrate; a first line connected to the processing unit and a water supply source; and supplying water sent from the water supply source to the processing unit; and the first line A second line to which each of the upstream end and the downstream end is connected, and a plurality of third lines branched from the second line, each at a branch point from the second line A plurality of third lines provided with valves, and a plurality of chemical liquid supply sources connected to the respective third lines, each of the chemical liquid supply sources supplying a chemical liquid to the respective third lines. A program that can be executed by a control computer of a substrate processing apparatus including a plurality of chemical solution supply sources to be supplied, and the control computer controls the substrate processing apparatus by executing the program Base In those executing the processing method,
The substrate processing method comprises:
Supplying a chemical solution to the processing unit via the third line, the second line, and the first line by the chemical solution supply sources, and performing a chemical process on the substrate in the processing unit;
After performing chemical treatment of the substrate, supplying water to the processing unit via the first line by the water supply source, and rinsing the substrate in the processing unit;
A program characterized by comprising A first processing unit configured to process a substrate; a first line connected to the processing unit and a water supply source; and supplying water sent from the water supply source to the processing unit; and the first line A second line to which each of the upstream end and the downstream end is connected, and a plurality of third lines branched from the second line, each at a branch point from the second line A plurality of third lines provided with valves, and a plurality of chemical liquid supply sources connected to the respective third lines, each of the chemical liquid supply sources supplying a chemical liquid to the respective third lines. A storage medium storing a program that can be executed by a control computer of a substrate processing apparatus including a plurality of chemical solution supply sources to be supplied. By executing the program, the control computer The substrate In those for executing a substrate processing method by controlling the management device,
The substrate processing method comprises:
Supplying a chemical solution to the processing unit via the third line, the second line, and the first line by the chemical solution supply sources, and performing a chemical process on the substrate in the processing unit;
After performing chemical treatment of the substrate, supplying water to the processing unit via the first line by the water supply source, and rinsing the substrate in the processing unit;
A storage medium comprising:

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