JP2010036280A - Manufacturing method of mems structure - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of an MEMS structure which can prevent a vibrating part of a vibrator from being fixed at an unnecessary position. <P>SOLUTION: When the vibrator 10 having a support structure part 11 and the beam shaped vibrating part 12 is die-bonded to a mounting board 30 in such a way that the vibrating part 12 is opposed to the mounting board 30 with a space provided therebetween, a dam part 26a formed with a groove or a protrusion is formed on a surface of the mounting board 30 to be die-bonded to the support structure part 11 or a surface of the support structure part 11 to be die-bonded to the mounting board 30 and a bonding agent 31 is applied to the surface to be die-bonded to die-bond the support structure 11 to the mounting board 30. <P>COPYRIGHT: (C)2010,JPO&amp;INPIT

Description

  The present invention relates to a method for manufacturing a MEMS structure used for a resonator or the like, and more particularly to a method for manufacturing a MEMS structure in which a vibrator is die-bonded on a mounting substrate.

  The MEMS (Micro Electro Mechanical System) technology is one of micromachine technologies, and has attracted attention as a manufacturing technology for components used in small electronic devices such as mobile phones.

  As one of the MEMS structures formed by the MEMS technology, there is a MEMS structure in which a vibrator is die-bonded on a mounting substrate. The vibrator die-bonded on the mounting substrate includes a support structure portion and a vibration portion. The vibration portion has a cantilever-like or doubly-supported structure and is supported by the support structure portion. Has a floating structure in the air. Such MEMS structures are used for applications such as resonators and various sensors by utilizing the function of the vibrator.

By the way, when die-bonding a vibrator on a mounting substrate, a method of die-bonding the vibrator and the mounting substrate by applying an adhesive on the die-bonding surface is performed (for example, Patent Document 1 below).
JP-A-8-145686

  In order to obtain sufficient adhesive strength between the vibrator and the mounting substrate, it is necessary to apply a relatively large amount of adhesive to the die bond surface. Also, if an adhesive with poor fluidity is used, the workability of applying the adhesive to the die-bonding surface will be reduced, so to improve the productivity of the MEMS structure, that is, use an adhesive with high fluidity. Is preferred.

  However, if the amount of adhesive applied is increased or an adhesive with high fluidity is used, when the vibrator is die-bonded on the mounting board, the adhesive protrudes from the die-bonding surface, and the adhesive spreads around. End up. Therefore, in particular, when a vibrator including a support structure portion and a beam-like vibrating portion is die-bonded on the mounting substrate so that the vibrating portion of the vibrator faces the mounting substrate with a space therebetween. The adhesive that protrudes from the die bond surface adheres to the vibration part of the vibrator, and an originally unnecessary bonding point is generated between the vibration part and the mounting substrate or the support structure part, and the vibration part is fixed, and the vibration part The product defect that the desired characteristics of the child could not be obtained easily occurred.

  Accordingly, an object of the present invention is to provide an adhesive for die-bonding a vibrator having a support structure portion and a beam-like vibration portion on a mounting substrate so that the vibration portion faces the mounting substrate with a space therebetween. It is an object of the present invention to provide a method for manufacturing a MEMS structure capable of preventing the vibration part of the vibrator from being unnecessarily spread and being fixed at an unnecessary portion.

  In order to achieve the above object, according to a first method of manufacturing a MEMS structure of the present invention, a vibrator including a support structure part and a beam-like vibration part is formed on a mounting substrate by an adhesive, and the vibration part is A method of manufacturing a MEMS structure die-bonded so as to face a mounting substrate with a space therebetween, the surface of the mounting substrate being die-bonded to the support structure portion, or the mounting substrate and die-bonding surface of the support structure portion A dam portion made of a groove or a protrusion is formed on the surface to be bonded, an adhesive is applied to the surface to be die-bonded, and the support structure portion and the mounting substrate are die-bonded.

  In the second method of manufacturing a MEMS structure according to the present invention, a vibrator including a support structure portion and a beam-like vibration portion is placed on a mounting substrate by an adhesive, and the vibration portion is spaced from the mounting substrate. A method of manufacturing a MEMS structure die-bonded so as to face each other, wherein an adsorbent is provided on a surface of the mounting substrate that is die-bonded to the support structure portion or a surface of the support structure portion that is die-bonded to the mounting substrate. A layer is formed, an adhesive is applied to the adsorbent layer, and the support structure portion and the mounting substrate are die-bonded.

  According to the first method of manufacturing a MEMS structure of the present invention, a dam part formed of a groove or a protrusion is formed on a surface of the mounting substrate that is die-bonded to the supporting structure portion or a surface of the supporting structure portion that is die-bonded to the mounting substrate. Therefore, even when a highly fluid adhesive is used, excessive flow of the adhesive applied to the die bond surface by the dam portion can be suppressed, and the adhesive protrudes and spreads around the die bond surface. Can be prevented. Therefore, the vibrator can be die-bonded on the mounting substrate without fixing the vibration part of the vibrator at an unnecessary portion, and a MEMS structure having stable characteristics can be manufactured with high productivity.

  Further, according to the second method for producing a MEMS structure of the present invention, the adsorbent layer is formed on the surface of the mounting substrate that is die-bonded to the support structure portion or the surface of the support structure portion that is die-bonded to the mounting substrate. Even when a highly fluid adhesive is used, the adhesive applied to the die bond surface is impregnated into the adsorbent layer, so that the adhesive can be prevented from protruding from the die bond surface. Therefore, the vibrator can be die-bonded on the mounting substrate without fixing the vibration part of the vibrator at an unnecessary portion, and a MEMS structure having stable characteristics can be manufactured with high productivity. In addition, when placing an adsorbent that has been impregnated with an adhesive in advance on the die bond surface and trying to die bond the vibrator on the mounting substrate, to adjust the position of the adsorbent, use tweezers or a collet, Although it is necessary to align the adsorbent, the adsorbent is impregnated with an adhesive, so that the adsorbent is likely to adhere to the tweezers and not easily separate from the tweezers. There is a problem that the adjustment cannot be performed with high accuracy. On the other hand, in the second manufacturing method of the MEMS structure of the present invention, an adsorbent layer is formed on the die bond surface, an adhesive is applied to the adsorbent layer, and the support structure portion, the mounting substrate, Therefore, there is no problem relating to the position adjustment of the adsorbent as described above.

  In the first manufacturing method of the MEMS structure of the present invention, the dam portion is formed by etching the support structure portion, or metal, silicon oxide and silicon nitride are formed on the support structure portion or the mounting substrate. It is preferable to form by laminating layers selected from those.

  2nd of the manufacturing method of the MEMS structure of this invention WHEREIN: The said adsorbent layer joins the 1 or more types chosen from a metal mesh, a metal sintered compact, and a porous ceramic to the said mounting substrate or the said support structure part. It is preferable to form.

  In the first and second methods of manufacturing a MEMS structure according to the present invention, the vibrator is formed by laminating an insulating layer and a semiconductor layer in this order on a support layer, and the insulating layer is interposed through the insulating layer. It is preferable to include a vibrating portion made of the semiconductor layer in which the semiconductor layer is formed in a beam shape with a support portion supported by the support layer as a base end.

  According to the present invention, since the adhesive applied to the die bond surface with the vibrator on the mounting substrate can be prevented from protruding from the die bond surface and spreading to the surroundings, the vibrator of the vibrator is fixed at an unnecessary portion. The MEMS structure having stable characteristics can be manufactured with high productivity.

  First, a vibrator to be die-bonded to a mounting substrate in the method for manufacturing a MEMS structure according to the present invention will be described. The vibrator is not particularly limited as long as it includes a support structure portion and a beam-like vibration portion. For example, the vibrator 10 shown in FIG. 1 is given as an example.

  The vibrator 10 shown in FIG. 1 is formed by laminating a semiconductor layer 51 on a base 52, and includes a support structure portion 11 and a beam-like vibration portion 12. The vibration part 12 functions as a movable electrode, and is formed of a material such as silicon. And the cantilever-like structure where the weight part 12b wider than the beam part 12a was formed in the front-end | tip of the beam part 12a protruded in the horizontal direction from the support structure part 11 is comprised. In addition, the support structure portion 11 includes a pair of fixed electrodes 14a and 14b made of a material such as silicon and having an electrode surface facing the weight portion 12b of the vibration portion 12 (movable electrode). 12 on both sides. Electrode pads 13a and 13b are formed on the upper surfaces of the fixed electrodes 14a and 14b to be connected to subsequent electronic circuits. In addition, an electrode pad 13 c for connecting the vibration part 12 (movable electrode) and a subsequent electronic circuit is formed on the base end side of the vibration part 12 of the support structure part 11.

  Such a vibrator is formed using, for example, a so-called SOI (Silicon on Insulator) substrate 20 in which an insulating layer 22 and a semiconductor layer 21 are laminated in this order on a support layer 23 as shown in FIG. Can do. In this case, the semiconductor layer 21 corresponds to the semiconductor layer 51 in FIG. 1, and the insulating layer 22 and the support layer 23 correspond to the base 52 in FIG. An example of the SOI substrate 20 is one in which the support layer 23 has a thickness of 200 to 525 μm, the insulating layer 22 has a thickness of 0.2 to 1.0 μm, and the semiconductor layer 21 has a thickness of 2 to 30 μm.

Then, as shown in FIG. 3, after resist patterning is performed on the surface of the semiconductor layer 21 of the SOI substrate 20 so as to have a desired vibration part and fixed electrode shape, an etching gas (for example, C ₄ F ₈ and SF is used). ₆ ), unnecessary portions of the semiconductor layer 21 are removed, and the support structure portion 11, the vibration portion 12 (movable electrode), and the fixed electrodes 14a and 14b in FIG. Only the remaining part 21a which becomes each constituent material is left. Next, as shown in FIG. 4, the insulating layer 22 and the support layer 23 are etched to remove unnecessary portions of the insulating layer 22 and the support layer 23, respectively, and the constituent material of the support structure portion 11 in FIG. 1. Thus, a space 24 is formed below the remaining portions 21a2 and 21a3 forming the vibrating portion 12 among the remaining portions 21a of the semiconductor layer 21 so as to leave only the remaining portions 22a and 23a. Here, in the vibrating portion 12 (movable electrode) in FIG. 1, the beam portion 12 a is configured by the remaining portion 21 a 2 of the semiconductor layer 21, and the weight portion 12 b is configured by the remaining portion 21 a 3 of the semiconductor layer 21. The support structure 11 in FIG. 1 includes a remaining portion 21a1 of the semiconductor layer 21, a remaining portion 22a of the insulating layer 22, and a remaining portion 23a of the support layer 23. Further, the fixed electrodes 14a and 14b in FIG. 1 are configured by the remaining portion 21a4 of the semiconductor layer 21, and the remaining portion 21a1 of the semiconductor layer 21 is formed on the upper surface of the remaining portion 22a of the insulating layer 22 of the support structure portion 11. It arrange | positions in the state isolate | separated by groove | channel 15a1, 15a2, 15b1, 15b2.

  Then, after forming the electrode pads 13a and 13b for the fixed electrodes and the electrode pad 13c for the movable electrodes, the SOI substrate on which a large number of MEMS structures of the vibrator are formed is diced to form a chip. A vibrator can be manufactured. In the semiconductor layer 51 in the vibrator 10 of FIG. 1, on the upper surface of the semiconductor layer portion (remaining portion 21a1 of the semiconductor layer 21 in FIG. 4) facing the fixed electrodes 14a and 14b via the grooves 15a2 and 15b2. As shown in the figure, the electrode pad 13d is formed, and the potential of the semiconductor layer portion (remaining portion 21a1 in FIG. 4) is set to the same potential as that of the vibrating portion 12 (movable electrode) or the like by connection with the subsequent electronic circuit. It is good to be able to make it.

  In addition, the vibrator according to the present invention is not limited to the vibrator formed using the SOI substrate as described above. For example, the vibrator may be formed on an insulating base made of a glass substrate or the like forming a support structure. It can also be manufactured by laminating a metal layer or a semiconductor layer formed in the shape of the vibrating part (movable electrode) and the fixed electrode.

  The vibrator 10 shown in FIG. 1 has a cantilever structure in which one end of the vibration part 12 is fixed to the support structure part 11, but both ends of the vibration part 12 are fixed to the support structure part 11. Alternatively, it may be a doubly supported beam.

  In addition, the vibrator 10 shown in FIG. 1 applies an AC voltage to the fixed electrodes (drive electrodes) 14a and 14b, so that the vibration unit 12 that is a movable electrode and the fixed electrodes (drive electrodes) 14a and 14b are interposed. This is a capacitive vibrator that vibrates the vibrating part 12 in the horizontal direction (left-right direction) between the fixed electrodes (drive electrodes) 14a and 14b by the generated electrostatic force. This is used as a resonator for various applications. Can be used. Note that the vibrator according to the present invention is not limited to the above-described capacitance type as a driving method, but is a piezoelectric driving type vibration in which a piezoelectric element is disposed above the vibration unit 12 or on the left and right side surfaces. It may be a child or a magnetic drive type vibrator.

  Further, the vibrator 10 shown in FIG. 1 is generated between the vibration part (movable electrode) 12 and the fixed electrodes (drive electrodes) 14a and 14b by applying an AC voltage to the fixed electrodes (drive electrodes) 14a and 14b. 1 is a capacitance type vibrator that vibrates the vibrating part 12 in the horizontal direction (left-right direction) between the fixed electrodes (drive electrodes) 14a and 14b by the electrostatic force. In the configuration of FIG. A detection electrode (not shown) is provided so as to face the upper direction (or the lower direction) of the (movable electrode) with a gap therebetween, and the capacitance between the detection electrode and the vibrating portion 12 (movable electrode) is detected. By providing the capacitance detection circuit, an angular velocity sensor can be configured. In such an angular velocity sensor, when an AC voltage drive signal is applied to the fixed electrodes (drive electrodes) 14a and 14b, the vibration part (movable electrode) 12 is forcibly vibrated in the horizontal direction (left-right direction) at a fixed frequency. At this time, when an angular velocity about the vibrating portion (movable electrode) 12 is applied, Coriolis vibration proportional to the angular velocity is started in a direction (vertical direction) in which the vibrating portion (movable electrode) 12 is orthogonal to the forced vibration direction, The capacitance between the vibration part (movable electrode) 12 and the detection electrode changes. The angular velocity can be measured by detecting this change in capacitance with a capacitance detection circuit.

  Further, in the configuration of FIG. 1, instead of applying an AC voltage drive signal to the fixed electrodes 14a and 14b to forcibly vibrate the vibrating portion (movable electrode) 12, the fixed electrodes 14a and 14b are used as detection electrodes. An acceleration sensor can be configured by providing a capacitance detection circuit that detects the capacitance between the (detection electrodes) 14a and 14b and the vibrating portion 12 (movable electrode). In this acceleration sensor, when an external force such as acceleration is applied, the vibration part 12 (movable electrode) moves, and the capacitance between the vibration part (movable electrode) 12 and the fixed electrodes (detection electrodes) 14a and 14b changes. . The acceleration can be measured by detecting this change in capacitance with a capacitance detection circuit.

  Next, a first embodiment of a method for manufacturing a MEMS structure according to the present invention will be described.

  FIG. 5 is a schematic process diagram of the first embodiment of the method for manufacturing a MEMS structure according to the present invention. In the first embodiment, the dam portion 26a formed of a groove is formed on either the surface of the mounting substrate 30 that is die-bonded to the support structure portion 11 or the surface of the support structure portion 11 that is die-bonded to the mounting substrate 30. Then, an adhesive is applied to the surface to be die-bonded, and the support structure portion 11 and the mounting substrate 30 are die-bonded so that the vibration portion 12 faces the mounting substrate 30 with a predetermined interval. Hereinafter, description will be made with reference to FIGS.

First, as shown in FIG. 5A, a groove for preventing adhesive spread is resist-patterned on the surface of the support structure 11 of the vibrator 10 that is die-bonded to the mounting substrate 30, and an etching gas (for example, C ₄ F) is formed. ₈ and a mixed gas of SF ₆ ), the unnecessary support layer 23 is removed, and a dam portion 26 a including a groove is formed in the support structure portion 11. The dam portion 26a forms a space 24 below the semiconductor layer 21 (remaining portions 21a2 and 21a3) forming the vibrating portion 12 (the beam portion 12a and the weight portion 12b) when a vibrator is formed using an SOI substrate. In this case, the support layer 23 may be formed by etching. Therefore, in the case of manufacturing a vibrator by etching an SOI substrate, a dam portion formed of a groove can be formed when the SOI substrate is etched (when unnecessary support layer 23 is removed). The manufacturing process can be further simplified.

  Next, as shown in FIG. 5B, the adhesive 31 is applied to the surface to be die-bonded. In this embodiment, the adhesive 31 is applied to the mounting substrate 30 side, but may be applied to the support structure 11 side.

  There is no limitation in particular as the adhesive agent 31, and it can select suitably according to a use. For example, the main components are conductive adhesives made by adding conductive fillers such as silver, nickel, and carbon to resins such as epoxy, polyurethane, and silicone, and polyepoxy resins, polyimide resins, polyurethane resins, and silicone resins. Non-conductive adhesive.

  The coating amount of the adhesive 31 is preferably equal to or less than the volume of the dam portion 26a formed in the support structure portion 11, and more preferably 40 to 100% of the volume of the dam portion 26a. If the amount of adhesive applied is too small, the bonding strength between the vibrator 10 and the mounting substrate 30 may not be sufficiently obtained. Further, if the coating amount exceeds the volume of the dam portion 26a, the adhesive 31 may protrude from the die bond surface to the surroundings.

  Next, as shown in FIG. 5C, the support structure portion 11 and the mounting substrate 30 are die-bonded so that the vibrating portion 12 faces the mounting substrate 30 with a predetermined interval. Since the adhesive 31 applied to the die bond surface is sealed in the dam portion 26a, the adhesive does not easily flow out around the die bond surface even when a highly fluid adhesive is used. As a result, the adhesive 31 is interposed between the vibration part 12 and the mounting substrate 30 and the side part of the support structure part 11, which are originally places that do not require adhesion, and vibration is caused. The vibrating portion 12 of the child 10 is not fixed at an unnecessary portion, and a MEMS structure having stable characteristics can be manufactured with high productivity.

  In the above embodiment, the support structure portion 11 is etched to form the groove dam portion 26 a on the support structure portion 11 side. However, the adhesive spreads on the surface of the mounting substrate 30 that is die-bonded to the support structure portion 11. The prevention groove may be resist-patterned and etched to form a dam portion 26 a made of a groove on the surface of the mounting substrate 30. However, it is preferable to form the dam part 26a on the support structure part 11 side of the vibrator 10 from the viewpoint of ease of positioning when the vibrator 10 is die-bonded to the mounting substrate 30 and labor of the etching process.

  FIG. 6 is a schematic process diagram of a second embodiment of the method for manufacturing a MEMS structure according to the present invention. In the second embodiment, the dam part 26b including the protrusions 27 is formed on the surface of the mounting substrate 30 that is die-bonded to the support structure 11 or the surface of the support structure 11 that is die-bonded to the mounting substrate 30, and the surface is die-bonded. The support structure portion 11 and the mounting substrate 30 are die-bonded so that the vibrating portion 12 faces the mounting substrate 30 with a predetermined interval. Hereinafter, a description will be given with reference to FIGS.

  First, as shown in FIG. 6A, the surface of the support layer 23 (remaining portion 23a) on the support structure portion 11 side of the vibrator 10 that is die-bonded to the mounting substrate 30 is made of metal, silicon oxide, and silicon nitride. The selected layer is laminated to form the protrusion 27, and the dam portion 26 b surrounded by the protrusion 27 is formed.

  The method for forming the protrusion 27 is not particularly limited, and examples thereof include a sputtering method, a CVD method, and a screen printing method.

  Next, as shown in FIG. 6B, the adhesive 31 is applied to the surface to be die-bonded. In this embodiment, the adhesive 31 is applied to the mounting substrate 30 side, but may be applied to the support structure 11 side.

  Next, as shown in FIG. 6C, the support structure portion 11 and the mounting substrate 30 are die-bonded so that the vibration portion 12 faces the mounting substrate 30 with a predetermined interval. Since the adhesive 31 applied to the die bond surface is sealed in the dam portion 26b, even if a highly fluid adhesive is used, it does not flow out around the die bond surface. As a result, the adhesive 31 is interposed between the vibration part 12 and the mounting substrate 30 and the side part of the support structure part 11, which are originally places that do not require adhesion, and vibration is caused. It is possible to prevent the vibrating portion 12 of the child 10 from being fixed at an unnecessary portion, and to manufacture a MEMS structure having stable characteristics with high productivity.

  In the above embodiment, the protrusion 27 is formed on the support structure portion 11 and the dam portion is formed by the protrusion 27. However, the surface of the mounting substrate 30 that is die-bonded to the support structure portion 11 is made of metal, silicon. A layer selected from an oxide and silicon nitride may be stacked to form a protrusion, and the dam portion 26b surrounded by the protrusion may be formed. However, from the viewpoint of ease of positioning when the vibrator 10 is die-bonded to the mounting substrate 30, the dam portion 26 b is preferably formed in the support structure portion 11 of the vibrator 10.

  Next, a third embodiment of the method for manufacturing a MEMS structure according to the present invention will be described.

  FIG. 7 is a schematic process diagram of the third embodiment of the method for manufacturing a MEMS structure according to the present invention. In the third embodiment, the adsorbent layer 28 is formed on the surface of the mounting substrate 30 that is die-bonded to the support structure 11 or the surface of the support structure 11 that is die-bonded to the mounting substrate 30. Then, an adhesive is applied to the adsorbent layer 28, and the support structure portion 11 and the mounting substrate 30 are die-bonded so that the vibration portion 12 faces the mounting substrate 30 with a predetermined interval. Hereinafter, a description will be given with reference to FIGS.

  First, as shown in FIG. 7A, an adsorbent is bonded to the surface of the support layer 23 (remaining portion 23a) on the support structure portion 11 side of the vibrator 10 that is die-bonded to the mounting substrate 30, and the adsorbent Layer 28 is formed.

  Examples of the adsorbent include a metal mesh, a metal sintered body, and a porous ceramic.

  The thickness of the adsorbent is preferably set so that it can be completely impregnated with the coated adhesive. The amount of adhesive applied can be adjusted as appropriate according to the type of adhesive.

  Examples of the adsorbent bonding method include the following methods (1) to (4).

(1) Method of joining support structure 11 and adsorbent with adhesive (2) Method of heating and pressurizing joint and joining support structure 11 and adsorbent by thermocompression (3) A method of joining the support structure portion 11 and the adsorbent by ultrasonic bonding using sound waves and utilizing frictional heat at the interface between the support structure portion 11 and the adsorbent (4) Support structure portion 11 by thermal eutectic bonding Method of joining the adsorbent and the adsorbent (only when the adsorbent is made of a metal material)

  Next, as shown in FIG. 7B, the adhesive 31 is applied to the adsorbent layer 28.

  Next, as illustrated in FIG. 7C, the support structure portion 11 and the mounting substrate 30 are die-bonded so that the vibration portion 12 faces the mounting substrate 30 with a predetermined interval. Since the adhesive 31 applied to the adsorbent layer 28 is impregnated in the adsorbent layer 28, the adhesive 31 is less likely to flow out around the die bond surface. For this reason, the adhesive 31 is interposed between the vibration part 12 and the mounting substrate 30 and the vibration part 12 and the side surface part of the support structure part 11, which are originally unnecessary portions for adhesion, and vibration is caused. The vibrator can be die-bonded on the mounting substrate without the child vibration portion being fixed at an unnecessary portion.

  In the above-described embodiment, the adsorbent is bonded to the surface of the support structure 11 that is die-bonded to the mounting substrate 30 to form the adsorbent layer, but the surface of the mounting substrate 30 that is die-bonded to the support structure 11 is The adsorbent layer may be formed on the mounting substrate 30 side by bonding the adsorbent. However, the adsorbent layer 28 is preferably formed on the support structure portion 11 of the vibrator 10 from the viewpoint of ease of positioning when the vibrator 10 is die-bonded to the mounting substrate 30.

  Next, a comparative example of a method for manufacturing a MEMS structure will be described.

  FIG. 8 is a schematic process diagram of a comparative example of a method for manufacturing a MEMS structure. This comparative example does not form means for preventing the adhesive from protruding, that is, means for preventing the adhesive from protruding from the die bond surface, such as the dam portions 26a and 26b or the adsorbent layer 28. The third embodiment is different from the third embodiment, and is otherwise the same as the first to third embodiments.

  In this comparative example, as shown in FIG. 8B, the adhesive 31 is applied to the surface of the mounting substrate 30 that is die-bonded to the support structure 11, and the vibrating portion 12 is formed as shown in FIG. The support structure portion 11 and the mounting substrate 30 are die-bonded so as to face the mounting substrate 30 with a predetermined interval. In this die-bonded state, the vibration portion 12 is mounted between the mounting substrate 30 and the support structure portion 11. There is a possibility that an originally unnecessary bonding portion is generated and the vibration portion is fixed.

  That is, in this comparative example, since the adhesive protrusion means such as the dam portions 26a and 26b or the adsorbent layer 28 in the first to third embodiments is not formed, it depends on the fluidity and the coating amount of the adhesive. However, as shown in FIG. 8C, when the vibrator 10 is die-bonded on the mounting substrate 30, the adhesive 31 protrudes from the die-bonding surface (the die-bonding region on the mounting surface of the mounting substrate 30), and the mounting surface of the mounting substrate 30. The portion extends outside the die bond region, the side surface of the support structure 11, and the lower surface and side surfaces of the vibration portion 12. For this reason, as shown as unnecessary joint portions 31a and 31b in FIG. 8 (c), between the vibration portion 12 and the mounting substrate 30 and the vibration portion 12 and the support structure portion, which are originally unnecessary portions for adhesion. Therefore, there is a possibility that the adhesive 31 is interposed between the side surface portion 11 and the vibration portion 12 is fixed at an unnecessary portion, and a desired characteristic of the vibrator cannot be obtained. There is. Such a problem of occurrence of defects is the same even when the adhesive 31 is applied to the surface of the support structure 11 that is die-bonded to the mounting substrate 30.

  In addition, the problem that an originally unnecessary bonding portion is generated between the vibration part and the mounting substrate or the support structure part described in the comparative example, and the vibration part is fixed, is an SOI as shown in FIG. In addition to a method for manufacturing a MEMS structure in which a vibrator formed using a substrate is die-bonded on a mounting substrate with an adhesive, a vibrator including a support structure portion and a beam-like vibration portion is an adhesive. Therefore, the problem is common to the manufacturing method of the MEMS structure in which the vibration part is die-bonded on the mounting substrate so as to face the mounting substrate with a gap.

  In the MEMS structure manufacturing method according to the present invention with respect to the comparative example shown in FIG. 8, the dam portions 26a and 26b or the adsorbent layer 28 are used as described in the first to third embodiments. By forming the adhesive sticking out prevention means, a problem arises in that a vibration part is originally fixed between the vibration part and the mounting substrate or the support structure part, and the vibration part is fixed, resulting in a defect. Therefore, a MEMS structure having stable characteristics can be manufactured with high productivity.

It is a perspective view showing one embodiment of a vibrator. It is a schematic sectional drawing of the SOI substrate used for manufacture of a vibrator. FIG. 3A is a schematic diagram illustrating a process of etching a semiconductor layer in a manufacturing process of a vibrator using an SOI substrate, and FIG. 3A is a cross-sectional view taken along line AA in FIG. ) Is a plan view. It is the schematic showing the process of etching an insulating layer and a support layer, respectively, among the manufacturing processes of the vibrator | oscillator using an SOI substrate, Comprising: Fig.3 (a) is the sectional view on the AA line of the same (b), FIG. 3B is a plan view. It is a schematic process drawing of a 1st embodiment of a manufacturing method of a MEMS structure of the present invention. It is a schematic process drawing of 2nd Embodiment of the manufacturing method of the MEMS structure of this invention. It is a schematic process drawing of 3rd Embodiment of the manufacturing method of the MEMS structure of this invention. It is a schematic process drawing of the comparative example of the manufacturing method of a MEMS structure.

Explanation of symbols

10: vibrator 11: support structure parts 13a, 13b, 13c, 13d: electrode pads 14a, 14b: fixed electrode 20: SOI substrate 21: semiconductor layer 22: insulating layer 23: support layers 26a, 26b: dam part 27: protrusion 28: Adsorbent layer 30: Mounting substrate 31: Adhesive

Claims (6)

A method of manufacturing a MEMS structure in which a vibrator having a support structure portion and a beam-like vibration portion is die-bonded on a mounting substrate with an adhesive so that the vibration portion faces the mounting substrate with a space therebetween Because
Forming a dam part consisting of a groove or a protrusion on the surface of the mounting substrate that is die-bonded to the support structure portion, or on the surface of the support structure portion that is die-bonded to the mounting substrate,
A method for manufacturing a MEMS structure, comprising: applying an adhesive to the surface to be die-bonded, and die-bonding the support structure portion and the mounting substrate.   The method for manufacturing a MEMS structure according to claim 1, wherein the dam portion is formed by etching the support structure portion.   2. The method for manufacturing a MEMS structure according to claim 1, wherein the dam portion is formed by laminating a layer selected from a metal, silicon oxide, and silicon nitride on the support structure portion or the mounting substrate. A method of manufacturing a MEMS structure in which a vibrator having a support structure portion and a beam-like vibration portion is die-bonded on a mounting substrate with an adhesive so that the vibration portion faces the mounting substrate with a space therebetween Because
Forming an adsorbent layer on the surface of the mounting substrate that is die-bonded to the support structure portion or the surface of the support structure portion that is die-bonded to the mounting substrate;
A method for manufacturing a MEMS structure, comprising: applying an adhesive to the adsorbent layer and die-bonding the support structure portion and the mounting substrate.   The manufacturing method of the MEMS structure according to claim 4, wherein the adsorbent layer is formed by joining at least one selected from a metal mesh, a metal sintered body, and a porous ceramic to the mounting substrate or the support structure portion. Method.   The vibrator is formed by laminating an insulating layer and a semiconductor layer in this order on a support layer, and the semiconductor layer is a beam with a support portion supported by the support layer via the insulating layer as a base end. The manufacturing method of the MEMS structure of any one of Claims 1-5 provided with the vibration part which consists of the said semiconductor layer formed in the shape.

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