JP2010034257A - Transmission line type capacitor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a high-capacitance decoupling capacitor responding to a GHz band. <P>SOLUTION: The transmission line type capacitor includes: a first conductive layer 1-2 formed on a base material insulation sheet 1-1; and a strip-like second conductive layer 2 formed on its upper surface through a first insulation thin-film layer 3-1. The capacitor further includes: a second insulating layer 3-2 conformally coating the second conductive layer; and a metal/semiconductor thin-film layer 3-3 conformally coating its upper part. A connection terminal 4-1 connected to the first conductive layer and a connection terminal 4-2 connected to the second conductive layer are formed adjacent to each other in the vicinity of one end of the second conductive layer. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a transmission line type capacitor, and more particularly to a transmission line type decoupling capacitor.

  With the recent increase in the speed of semiconductor devices, a decoupling capacitor corresponding to a higher frequency band is required.

  Conventionally, a ceramic multilayer chip type capacitor is often used as a decoupling capacitor of a relatively high frequency band.

  Some decoupling capacitors that can handle a relatively wide frequency band employ a transmission line structure.

  On the other hand, inductors and transformers that employ a transmission line structure have already been proposed as devices that can be used in a high frequency band (GHz band) (see, for example, Patent Document 1 or 2).

JP-A-11-87620 JP 2003-257739 A

  Ceramic multilayer chip capacitors have poor high-frequency characteristics of several hundred MHz or more, and it is not known that a capacitive component remains up to 1 GHz. This is because the ceramic multilayer chip capacitor has a resonance point, and the inductor component becomes dominant in a frequency band higher than that. For this reason, the ceramic multilayer chip type capacitor is not suitable as a decoupling capacitor for a power supply for a device in the GHz band.

  Moreover, what employ | adopted the transmission line structure is what applied a conductive polymer electrolytic capacitor, and has responded to the response to a GHz band. However, even in this device, when the frequency exceeds 1 GHz, the inductor component becomes dominant, and even if this device is used for a power source that compensates the operation at GHz, no effect is obtained.

  Furthermore, the devices described in the cited documents 1 and 2 utilize an inductor component, and do not disclose or suggest any capacitor that can be used in the GHz band.

  The present invention has been made in consideration of the above-described circumstances, and an object thereof is to provide a transmission line type capacitor in which a capacitor component dominates up to a 10 GHz band.

  In order to solve the above problems, a transmission line type capacitor according to the present invention includes an insulating sheet, a first conductive layer formed on the insulating sheet, and a first conductive layer formed on the first conductive layer. An insulating layer, a strip-shaped second conductive layer formed on the first insulating layer, a second insulating layer covering the second conductive layer except for one end thereof, and the second insulating layer A metal / semiconductor thin film layer made of a metal or semiconductor formed on the first conductive layer, and a first conductive layer connection terminal connected to the first conductive layer; A connection terminal for two conductive layers is connected, and the other end of the second conductive layer is an open end.

  As the metal / semiconductor thin film layer, a homogeneous film having a sheet resistance of 1Ω / □ or more or a film in which clustered grains are overlapped can be used. Moreover, the film thickness can be 20-10000 nm.

  Each of the first insulating film and the second insulating film can have a thickness of 20 to 10,000 nm.

  The metal / semiconductor thin film layer is made of one substance selected from the group consisting of Fe, Al, Ni, Ag, Mg, Cu, Si, and C, or at least two substances selected from the group. Alloys or eutectoids may be included.

  The connection terminal for the first conductive layer is connected to the first conductive layer and extends through the first insulating layer on the one end side extension line of the second conductive layer. It may be connected to an extraction electrode formed so as to be exposed on the upper surface of the layer.

  Alternatively, the planar shape of the first conductive layer is a rectangle, and the first conductive layer connection terminal is close to one end of the second conductive layer of the pair of short sides of the first conductive layer. You may make it expose from the window part formed on the said insulating sheet so that it may be connected to the short side of this, and formed in the said 1st insulating layer. In this case, the second conductive layer may have a plurality of strip-like conductive layers, and the second conductive layer connection terminal may be commonly connected to one end of the plurality of strip-like electrode layers. In this case, the width of each of the first conductive layer connection terminal and the second conductive layer connection terminal gradually decreases as the distance from the first conductive layer and the second conductive layer increases. It is preferable that the angle be 30 degrees or less.

  The ratio t / w between the thickness t and the width w of the second conductive layer or the strip-shaped conductive layer is preferably 0.5 or less.

  According to the present invention, it is possible to provide a transmission line type capacitor in which a capacitor component dominates up to a 10 GHz band.

  Further, according to the present invention, it is possible to provide a transmission line type capacitor having a large capacity per unit length.

  Embodiments of the present invention will be described below with reference to the drawings.

  FIG. 1A is a perspective view of one end of a transmission line type decoupling capacitor (hereinafter simply referred to as a capacitor) according to a first embodiment of the present invention, and FIG. 1B is a plan view thereof. is there. The other end side of the capacitor can be extended or folded back (development). This state is indicated by a one-dot chain line in FIGS.

  The capacitor shown in FIGS. 1A and 1B includes a laminated sheet 1 having a rectangular base insulating sheet 1-1 and a metal layer (first conductive layer) 1-2 deposited thereon. ing. Moreover, the 1st insulating thin film layer 3-1 which coats the upper surface of the lamination sheet 1 is formed, and it forms so that the strip | belt-shaped 2nd conductive layer (line | wire) 2 may extend in the longitudinal direction of the lamination sheet 1 on it. ing. A second insulating thin film layer 3-2 conformally coating the second conductive layer 2 except for one end thereof is formed on the exposed surfaces of the second conductive layer 2 and the first insulating thin film layer 3-1. Yes. Further, a metal / semiconductor thin film layer 3-3 made of a metal or a semiconductor conformally is formed on the second insulating thin film layer 3-2. The second insulating thin film layer 3-2 and the metal / semiconductor thin film layer 3-3 are collectively referred to as an upper conformal layer 3.

  A through hole is formed in the first insulating thin film layer 3-1 at a position on the extension line to the one end side of the second conductive layer 2. In this through hole, an extraction electrode connected to the first conductive layer 1-2 is provided. A first connection terminal 4-1 is formed on the upper surface of the extraction electrode. The lead electrode can be formed of the same material simultaneously with the formation of the second conductive layer 2.

  A second connection terminal 4-2 is formed on the upper surface of one end of the second conductive layer 2.

  As described above, the capacitor according to the present embodiment has a microstrip structure (transmission line structure) having a pair of lines (first conductive layer 1-2 and second conductive layer 2). In such a configuration, a transmission line capacitor in which the capacitor component dominates up to 10 GHz band can be realized by the presence of the metal / semiconductor thin film layer 3-3 (according to the Drude equation).

  Next, a method for manufacturing the capacitor of FIG. 1 will be described.

  First, the base insulating sheet 1-1 is prepared. The shape of the base insulating sheet 1-1 can be a rectangle. As the base insulating sheet 1-1, organic insulators such as glass fiber reinforced epoxy, epoxy, polyester, PET (polyethylene terephthalate), PPC (polyester polycarbonate), vinylidene, polyimide, and polystyrene can be used. The sheet thickness is desirably a thickness that can serve as a base material. If the thickness is several microns, inorganic sheets such as borosilicate glass and soda lime glass can be used. When an inorganic sheet is used, it is easy to employ a physical deposition process for thin film formation.

  Next, the first conductive layer 1-2 is formed on the base insulating sheet 1-1. For the formation of the first conductive layer 1-2, a method such as attaching a metal foil, sputtering, vapor deposition, plating, ion plating, CVD, thermal spraying, or the like can be used.

  Next, the first insulating thin film layer 3-1 is deposited on the first conductive layer 1-2. For the deposition of the first insulating thin film layer 3-1, techniques such as coating, spin coating, sputtering, vapor deposition, and CVD can be used. The first insulating thin film layer 3-1 is desirably a thin layer so as to disrupt the electromagnetic field balance of the microstrip line, and its film thickness range is 20 to 10,000 nm.

  Subsequently, through holes for lead electrodes are formed in the first insulating thin film layer 3-1, and a metal film to be the second conductive layer 2 is formed on the first insulating thin film layer 3-1. For the formation of this metal film, as in the formation of the first conductive layer 1-2, techniques such as attaching a metal foil, sputtering, vapor deposition, plating, ion plating, CVD, and thermal spraying can be used. The formed metal film is processed into a strip-shaped line using a technique such as photolithography, and an extraction electrode is formed. When increasing the line length, the second conductive layer 2 is folded back as shown in FIG. The width w of the second conductive layer 2 is preferably 10 μm to 1 mm, and the thickness t is determined according to the current capacity. For example, in the case where one second conductive layer 2 corresponds to 300 mA, t = 20 μm is appropriate if w = 100 μm.

  Next, the second insulating thin film layer 3-2 is formed on the entire upper surfaces of the first insulating thin film layer 3-1 and the second conductive layer 2. For the formation of the second insulating thin film layer 3-2, techniques such as coating, spin coating, sputtering, vapor deposition, CVD, and thermal spraying can be used. In addition, it is desirable to carry out by a conformal deposition process so that the second insulating thin film layer 3-2 is also formed on the side surface of the second conductive layer 2. The second insulating thin film layer 3-2 may have pinholes (defects and voids) or may have an island shape in which clusters are electrically independent. The film thickness of the second insulating thin film layer 3-2 is, for example, 20 to 1000 nm.

  Next, the metal / semiconductor thin film layer 3-3 is deposited so as to completely cover the second insulating thin film layer 3-2. The metal / semiconductor thin film layer 3-3 is desirably formed using a technique that can be conformally deposited, such as CVD, vapor deposition, sputtering, or thermal spraying. Since the metal / semiconductor thin film layer 3-3 produces a surface plasmon effect in the thin film, for example, a polycrystalline or amorphous thin film having a homogeneous film having a sheet resistance of 1 Ω / □ or more, or cluster-like grains overlapped. A metal or semiconductor provided in a configuration. For example, at least one substance selected from the group consisting of Fe, Al, Ni, Ag, Mg, Cu, Si, and C, or an alloy or eutectoid consisting of at least two selected from the above group is included. The film thickness of the metal / semiconductor thin film layer 3-3 is, for example, 20 to 10,000 nm.

  Next, at one end 1a of the laminated sheet 1, the metal / semiconductor thin film layer 3-3 and the second insulating thin film layer 3-2 are removed, and one end of the second conductive layer 2 and the lead electrode are exposed. Then, connection terminals 4-1 and 4-2 are formed on the upper surfaces of the lead electrode and one end of the second conductive layer 2, respectively. The connection terminals 4-1 and 4-2 are arranged as close to each other as possible (substantially the same position) in the planar layout.

  As described above, the capacitor shown in FIGS. 1A and 1B is manufactured. This capacitor can be embedded in a printed wiring board or the like.

  1A and 1B, a single strip-shaped line is formed as the second conductive layer 2, but a plurality (six in FIG. 2) of strip-shaped conductive layers are formed as shown in FIG. It may be.

  In the capacitor according to the second embodiment shown in FIG. 2, the first conductive layer 1-2 is formed in a rectangular shape, and the first connection terminal 4-1 ′ is formed on one of the pair of short sides. Yes. That is, the first connection terminal 4-1 'is formed on the base insulating sheet 1-1. In order to expose the first connection terminal 4-1 'to the outside, a second connection electrode extraction window 5 is formed in the first insulating thin film layer 3-1.

  The second connection terminal 4-2 ′ is connected in common to the plurality of strip electrode layers that are the second conductive layer 2.

  As the first connection terminal 4-1 ′ and the second connection terminal 4-2 ′ move away from the first conductive layer 1-2 and the second conductive layer 2 (going to the right in the figure), the widths thereof become narrower. Yes. It is preferable that the angles (throttle angles) θ1 and θ2 formed by both sides of the connection terminals 4-1 ′ and 4-2 ′ are 30 ° or less, respectively.

  In the capacitor of FIG. 2, if the size of each strip-like conductive layer is the same as that of the second conductive layer 2 of FIG. 1, the current capability is proportional to the number of strip-like conductive layers compared to that of FIG. Become. In other words, if the current capability is the same, the length of each strip-like conductive layer can be shortened by increasing the number of strip-like conductive layers that are the second conductive layers 2. In addition, the number of the strip | belt-shaped conductive layers which are the 2nd conductive layers 2 can be set arbitrarily.

  FIG. 3 is a cross section in the short side direction (width direction) of a portion other than the end 1a of the multilayer sheet 1 in the capacitor of FIG. In this figure, four second conductive layers 2 are shown.

  As shown in FIG. 3, the first conductive layer 1-2 and the second conductive layer 2 are electrically insulated and separated by the first insulating thin film layer 3-1. The second conductive layer 2 and the metal / semiconductor thin film layer 3-3 are electrically insulated and separated by the second insulating thin film layer 3-2. Accordingly, by applying a voltage to the connection terminals 4-1 and 4-2 (4-1 ′ and 4-2 ′), the first conductive layer 1-2 and the second conductive layer 2 can be adapted accordingly. Applied voltage. In this configuration, it does not matter whether the metal / semiconductor thin film layer 3-3 has conductivity or insulation. Therefore, as will be described later, the metal / semiconductor thin film layer 3-3 may have voids continuously.

The first insulating thin film layer 3-1 and the second insulating thin film layer 3-2 are voltages applied between the first conductive layer 1-2 and the second conductive layer 2 through the connection terminals 4-1 and 4-2. Designed to withstand. For example, it is designed so that the applied voltage can be freely changed from 0.1V to 10V. Here, when the capacity C [F] and the voltage V [V] are used, the electric power P [W] that can be stored is P = (1/2) CV ² , and therefore, it is more advantageous to be able to cope with a high voltage power source. It is.

When the width of the second conductive layer 2 is w, the relationship between the thickness t ₀ and the width w of the first conductive layer 1-2 forming the transmission line pair is w / t ₀ ≧ 1.5. desirable. The relationship between the thickness t and the width w of the second conductive layer 2 is preferably w / t ≧ 2.

  FIG. 4 is a diagram showing a partial surface state of the metal / semiconductor thin film layer 3-3. As shown in FIG. 4 (A), the metal / semiconductor thin film layer 3-3 may be a homogeneous nano-sized polycrystalline or amorphous material, or as shown in FIG. It may be a cluster. 4A and 4B, the metal or semiconductor 6 and the void 7 that is a defect of the thin film are mixed, but the void 7 may not exist. When the metal or semiconductor (powder) 6 is in a cluster shape, there are many gaps between the clusters and the conductive state is not established, and an insulating configuration is also possible.

  In the capacitor having the above-described structure, when a predetermined potential difference is applied between the connection terminals 4-1, 4-2 (4-1 ′, 4-2 ′), the first conductive layer 1-2 and the second conductive layer 2 are provided. The metal / semiconductor thin film layer 3-3 exchanges the photon-surface plasmon energy in the electromagnetic field or photon that spreads between the two. As a result, the speed of electromagnetic energy flowing in the paired line (hereinafter, this expression is used) of the first conductive layer 1-2 and the second conductive layer 2 is slowed, and the equivalent action of increasing the electrical length, that is, the line The capacity of the inside increases and functions as a capacitor. In other words, charge is stored in the capacitor. The potential difference between the connection terminals 4-1 and 4-2, that is, the upper limit value of the operating voltage of the storage battery is determined by the withstand voltage of the first insulating thin film layer 3-1 and the second insulating thin film layer 3-2, as can be seen from FIG.

  When it is desired to lengthen the paired line, it can be formed in a folded shape as described above or a multi-row arrangement. Thereby, it is possible to embed a printed wiring board having a predetermined length.

  In addition, when embedding in a multilayer wiring board, a plurality of paired lines are arranged above and below, but if they are separated by a distance equal to the width w of the second conductive layer 2, the photon-surface plasmon energy exchange is performed. It has been confirmed that there is almost no effect.

  As a capacitor configuration, it is ideal in terms of characteristics to have one straight paired line. When it is desired to reduce the size of the capacitor, it is desirable that the second conductive layer 2 has a folded shape. As shown in FIG. 2, when a large number of paired lines are arranged in parallel, the capacitor has frequency characteristics due to the influence of the connection terminal (electrode). In order to suppress this, it is desirable that the narrowing angle (angle formed by both side portions) of the connection terminal is 30 ° or less.

  Next, the reason why the capacity of the paired lines of the first conductive layer 1-2 and the second conductive layer 2 is large will be described.

Because the characteristic impedance Z ₀ of the later-described manner pair lines is small, the voltage V ₀ to be transmitted is input from the end portion 1a of the long-side direction is represented by the following formula (1).

V = V ₀ × Z ₀ / Z (1)

Where Z: internal impedance of the power input device, V ₀ : input voltage, Z ₀ : characteristic impedance of the paired line.

The electric power input to the connection terminals 4-1 and 4-2 travels through the paired lines, and is totally reflected back at the other end (in an open state) of the paired lines. The returned power causes impedance mismatch reflection (reflectance: (Z−Z ₀ ) / (Z + Z ₀ )) at the end 1a which is the input end, and is continuously combined with the input power supply voltage. By repeating this synthesis and reflection, the voltage V transmitted in the long side direction reaches the input voltage V ₀ after a certain time.

  Then, the input electric energy U is stored as it is as the electric charge Q that is input and becomes saturated in the paired line. The electric energy U is obtained by the following equation (2).

Q = tpd × V ₀ / Z ₀ (2)

  Where tpd: time required for the electromagnetic wave energy determined by photon-surface plasmon exchange between the paired line and the metal / semiconductor thin film layer 3-3 to pass through the length l, l: from the connection terminals 4-1 and 4-2 Length to the other end of the line.

Therefore, in order to obtain the charge amount Q accumulated in the pair line, it is necessary to determine the pair characteristic impedance of Z ₀ and transit time tpd.

The characteristic impedance Z ₀ of the pair line can be approximated by the following equation (3).

_{Z0 = [1 / 13.9√ε ω +1} ] {ln [(1+ (4t 0 / w) (14 + 8 / ε ω) (4t 0 / w) + √ ((14 + 8 / ε ω) / 11) 2 ( 4t ₀ / w) ² + (9.86 + 9.86 / ε _ω ) / 2] × √ [(μ ₀ μ _ω ) / (ε ₀ ε _ω )]} (3)

Where t ₀ = the thickness of the paired line (vs. the ground), w = the width of one paired line, μ ₀ : permeability in vacuum, μ _ω : first insulating thin film layer 3-1 and second at frequency ω Relative magnetic permeability of the insulating thin film layer 3-2, ε ₀ : dielectric constant in vacuum, ε _ω : dielectric constant of the first insulating thin film layer 3-1 and the second insulating thin film layer 3-2 at the frequency ω.

Therefore, in order to obtain the characteristic impedance Z ₀ of the paired line, it is necessary to obtain μ _ω and ε _ω .

According to the dielectric function formula and permeability function expression of Drude (Droude), ε _ω and mu _omega is expressed by the following equation (4) to (7) below.

ε _ω = 1− (ω _ep ² / ω ² ) (4)
ω _ep ² ≡ (n _e e ² ) / (ε ₀ m) (5)
μ _ω = 1− (ω _mp ² / ω ² ) (6)
ω _mp ² ≡ (n _p χ ² ) / (μ ₀ m) (7)

Where n _e : density of free electrons of the first insulating thin film layer 3-1 and the second insulating thin film layer 3-2, n _p : density of unpaired electrons of the laminated sheet (electric storage sheet) 1, e: charge of electrons , M: electron mass, χ: spin magnetic susceptibility of unpaired electrons.

Here, as shown in FIG. 4B, when the metal / semiconductor thin film layer 3-3 has a morphology in which the number of conductive particles composed of Fe cluster particles having a radius of 1000 nm is approximately 1/18 μm ³ in number. think of.

When Fe has one free electron per atom, the density of iron free electrons is 8.4 × 10 ²² atoms / cm ³ . And the free electron density on the surface of iron becomes the 2/3 power, that is, 1.9 × 10 ¹⁵ / cm ² . However, since free electrons are trapped in the surface adsorbed atoms, the surface free electron density is lower than this value. Assuming that the reduction rate of free electrons by this trap is 10 ⁻³ , the density of free electrons on the iron surface is 1.9 × 10 ¹² / cm ² .

The radius of the conductive particles is 1 μm = 1 × 10 ⁻⁵ cm, but the surface area is 4π (1 × 10 ⁻⁵ ) ² = 12.6 × 10 ⁻¹⁰ cm ² , so the amount of free electrons per particle Is 2.39 × 10 ³ . Since the density of the conductive particles is 1/18 [mu] m ^3, the density of the first insulating film layer 3-1 free electrons of the second insulating film layer 3-2 _n e = 1.32 × ^{10 20} atoms / ^{m 3} become.

Electron mass m = 9.11 × 10 ⁻³¹ kg, electron charge amount e = 1.6 × 10 ⁻¹⁹ C, and dielectric constant ε ₀ = 8.85 × 10 ⁻¹² F / m in vacuum. Substituting these values and n _e = 1.32 × 10 ²⁰ pieces / m ³ into the formula (5), ω _ep ² = 1.32 × 10 ²⁰ × (1.6 × 10 ⁻¹⁹ ) ² / ( 8.85 × 10 ⁻¹² × 9.1 × 10 ⁻³¹ ) = 0.42 × 10 ²⁸ and ω _ep = 0.65 × 10 ¹⁴ / s. Thus, ω _ep is the frequency of far ultraviolet light.

Here, when ω is 1 GHz, ε _ω = 1− (6.5 × 10 ¹³ ) ² / (2π × 1 × 10 ⁹ ) ² = 1−1.07 × 10 ⁸ = −1 according to Equation (4). .07 × 10 ⁸ , which is a negative and large value of ε _r <−10 ⁸ level. Although a large value can be realized theoretically, it is considered that it is industrialized here, and further, degradation of about 4 digits is considered, and ε _ω = −10 ⁴ is set.

On the other hand, μ _ω is assumed to be −10. This value is reasonable for the following reasons: As described above, the free electron density on the iron surface is 1.32 × 10 ²⁰ / cm ² . Of these, assuming that the occurrence probability of unpaired electrons is 10 ⁻⁶ , the density n _{p of} unpaired electrons on the iron surface is 1.32 × 10 ¹⁴ / cm ² . Since the magnetic flux quantum χ = 2.07 × 10 ⁻¹⁰ [Wb] and the magnetic permeability μ ₀ = 1.25 × 10 ⁻⁶ [N / A ⁻² ] in the vacuum, ω _mp ² = 1.32 × 10 ¹⁴ × (2.07 × 10 ⁻¹⁵ ) ² /(1.25×10 ⁻⁶ × 9.1 × 10 ⁻³¹ ) = 4.97 × 10 ²⁰ / s ² , ω _ep = 2.23 × 10 ¹⁰ / s.

Similarly, when ω = 1 GHz, μ _ω = 1− (2.23 × 10 ¹⁰ ) ² / (2π × 1 × 10 ⁹ ) ² = 1−0.125 × 10 ² = −11 is obtained. It is done. From this, it can be seen that even when μ _ω = −10, this value is sufficiently possible.

Then, assuming that t ₀ = 0.001 m, w = 0.005 m, and substituting these values, μ _ω = −10, and ε _ω = −10 ⁴ into the equation (3), Z ₀ = 377 × 1. 32/1390 = 0.35Ω is obtained. Now, assuming that l = 0.1 m, tpd can be obtained from equation (8).
tpd = c ₀ / √μω × εω (8)
The transmission time is tpd = 0.1 / (8 × 10 ⁸ / √10 × 10 ⁴ ) = 40 × 10 −9 [s], and assuming that the power supply voltage is 1 V, from equation (2), Q = 40 × 10 ⁻⁹ × 1 / 0.35 = 114 nC is obtained. Since the voltage is 1 V, the capacity is C = 114 nF. If the ratio of t ₀ and w is constant, Z ₀ is the same, and if t ₀ = 10 μm and w = 50 μm, it is the most advanced multilayer wiring board dimension in 2008. If a length l of 100 mm is prepared, the coupling capacitor can be embedded with almost no frequency characteristic of 0.1 μF. length l if the t ₀ half becomes about half, a size that can be multiple embedded in the multilayer wiring board. If the contents obtained by dropping _εω by 4 digits in the above theoretical calculation can be improved, it can be embedded more effectively.

  This calculation assumes that all free electrons and magnetons worked effectively at the resonance frequency for free electrons and magnetons (unpaired electrons). Therefore, it cannot be considered that the above calculation can be applied as it is. The number of effective free electrons and magnetons must be measured practically, and the effectiveness of the experimental model and the measured data are described below. The electromagnetic field spread of the pair of transmission lines is as shown in FIG. The lines where the electric lines of force and the lines of magnetic force run as far as possible are weak in mutual coupling and can be easily exchanged for other energy. That is, it is important that the width of the first conductor is wider than the width of the second conductor. Photons, which are quantized units of electromagnetic waves, can be efficiently converted into other energy such as surface plasmons and surface magnons. A paired line having a circular cross section is an effective structure in that sense, and this is also within the scope of the present invention.

  It is preferable that the metal / semiconductor thin film layer 3-3 be applied conformally so as to cover the second conductive layer 2 as much as possible so as to cover away the electric field lines and magnetic field lines that are far away. When these electric and magnetic fields come into contact with the metal surface or semiconductor surface of the metal / semiconductor thin film layer 3-3, free electrons undergo surface plasmon resonance, and paramagnetic magnetons perform surface magnon resonance to absorb photon energy. . Because plasmons and magnons are vibrations of electrons, their propagation speed propagates at the same order of speed as lattice vibrations, that is, at a speed close to the sound speed of the medium (5 orders of magnitude slower than the speed of light). Density increases by 5 orders of magnitude. Since the dielectric property with respect to a metal or a semiconductor is a thin film, sheet resistance is high, and plus and minus are arranged in a chain shape between grains to increase the relative dielectric constant. Similarly, the magnetic properties are SN chains, which increase the magnetic flux coupling and lower the relative permeability. For this reason, it is effective to make the particle shape with as few SN chains as possible with a relatively large cluster, and the state of FIG. 4B that satisfies both is desirable. Even in the case of metals and semiconductors that are not magnetic, dangling bonds on the surface are active and electrons are lost, and when the surface area of the powder is increased, it becomes magnetic, so that both the relative permittivity and the relative permeability are negative. A material, that is, a double negative material is obtained, and the capacitor (storage battery structure) of the present invention efficiently utilizes this phenomenon.

  As an experimental example, a capacitor having a structure as shown in FIG. 6 was prepared, and its characteristics were measured.

  As a capacitor having the structure shown in FIG. 6, copper foils (first conductive layer 1-2 and second conductive layer 2) having a thickness of 32 μm are pasted on both upper and lower surfaces of a polyimide wiring board (corresponding to the first insulating thin film layer 3-1). The upper copper foil was patterned to form a microstrip line, and nickel plating and solder plating were applied (total 8 μm) to prepare a finished surface. The FR-4 printed wiring board has a 18 μm thick copper foil pasted on both upper and lower surfaces and nickel / gold plated (2 μm thick), and a 28 μm thick copper foil is pasted on the same board. What gave (thickness 2 micrometers) was prepared. And the capacitance value of what was provided and what was not provided with the upper conformal layer 3 was measured. Here, the upper conformal layer 3 is an aluminum vapor-deposited film (metal / semiconductor thin film layer 3) having a thickness of 50 nm via an insulating sheet containing an adhesive (corresponding to the second insulating thin film layer 3-2) (thickness 128 μm and 17 μm). -3)) in a tenting state. Note that the 50 nm aluminum vapor-deposited film does not have conductivity due to nano-order surface irregularities of an insulating sheet (for example, a polyester organic sheet).

Further, the width w of the second conductive layer 2 is common to all the samples, and w = 1 mm. The thickness t of the second conductive layer 2 was t = 40 μm when using the polyimide wiring board 3-1 ′, and 20 μm and 30 μm when using the FR-4 printed wiring board. The thickness of the polyimide wiring board 3-1 ′ was t ₀ = 0.378 mm, and the thickness of the FR-4 printed wiring board was 0.590 mm and 0.767 mm. Further, the line length was set to l = 200 mm (common to all samples), and the tenting length = 180 mm (common to all samples).

  The measurement result of the capacitance value between the first conductive layer 1-2 and the second conductor layer 2 in the plurality of capacitors as described above is shown in FIG.

  As is clear from FIG. 7, the capacity is greatly increased by providing the upper conformal layer 3 in any case. It should be noted that the efficiency of photon-surface plasmon energy exchange varies greatly depending on the thickness of the second insulating thin film layer 3-2 and also slightly changes depending on the thickness of the first insulating thin film layer 3-1. Great improvement is expected by setting the thickness of the two insulating thin film layers 3-2 to about 1 μm and the thickness of the first insulating thin film layer 3-1 to about 10 μm.

  Although the present invention has been described with reference to the preferred embodiments, the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the spirit of the present invention. Is possible.

(A) is a perspective view of a transmission line type capacitor concerning a 1st embodiment of the present invention, and (B) is the top view. It is a top view of the transmission line type capacitor concerning a 2nd embodiment of the present invention. It is sectional drawing of the short side direction of the principal part of the transmission line type capacitor of FIG. It is a schematic diagram which shows an example of the surface of the metal / semiconductor thin film layer used for the transmission line type capacitor of FIG. 1 or FIG. It is a schematic diagram which shows the breadth of the electromagnetic field of a microstrip line. It is sectional drawing of the sample used for experiment. It is a figure which shows the result of the capacity | capacitance measurement of the various samples which have the cross-sectional structure of FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Laminated sheet 1a End 1-1 Base material insulating sheet 1-2 1st conductive layer 2 2nd conductive layer 3 Upper conformal layer 3-1 1st insulating thin film layer 3-2 2nd insulating thin film layer 3-3 Metal / Semiconductor thin film layer 4-1 First connection terminal 4-2 Second connection terminal 5 Second connection electrode extraction window 6 Metal or semiconductor 7 Void

Claims (9)

  An insulating sheet; a first conductive layer formed on the insulating sheet; a first insulating layer formed on the first conductive layer; and a strip-shaped formed on the first insulating layer. A second conductive layer; a second insulating layer covering the second conductive layer except for one end thereof; and a metal / semiconductor thin film layer made of a metal or a semiconductor formed on the second insulating layer. And connecting the first conductive layer connection terminal to the first conductive layer, connecting the second conductive layer connection terminal to one end of the second conductive layer, A transmission line type capacitor characterized in that the other end is an open end.   2. The transmission line type capacitor according to claim 1, wherein the metal / semiconductor thin film layer is a homogeneous film having a sheet resistance of 1Ω / □ or more, or a film in which clustered grains are overlapped.   The transmission line type capacitor according to claim 2, wherein the metal / semiconductor thin film layer has a thickness of 20 to 10,000 nm.   4. The transmission line type capacitor according to claim 2, wherein each of the first insulating film and the second insulating film has a thickness of 20 to 10,000 nm.   The metal / semiconductor thin film layer is one substance selected from the group consisting of Fe, Al, Ni, Ag, Mg, Cu, Si, and C, or an alloy consisting of at least two substances selected from the group or The transmission line type capacitor according to claim 4, comprising a eutectoid.   The connection terminal for the first conductive layer is connected to the first conductive layer and extends through the first insulating layer on the one end side extension line of the second conductive layer. The transmission line type capacitor according to claim 1, wherein the transmission line type capacitor is connected to an extraction electrode formed so as to be exposed on an upper surface of the layer.   The planar shape of the first conductive layer is a rectangle, and the first conductive layer connection terminal is closer to one end of the second conductive layer of the pair of short sides of the first conductive layer. It is formed on the said insulating sheet so that it may be connected to a short side, and it is exposed from the window part formed in said 1st insulating layer, It is any one of Claims 1-5 characterized by the above-mentioned. Transmission line type capacitor. The second conductive layer has a plurality of strip-shaped conductive layers, and the connection terminals for the second conductive layer are commonly connected to one end of the plurality of strip-shaped electrode layers,
The width of each of the first conductive layer connection terminal and the second conductive layer connection terminal gradually decreases as the distance from the first conductive layer and the second conductive layer increases, and the narrowing angle is 30 degrees or less. The transmission line type capacitor according to claim 7, wherein the transmission line type capacitor is provided.   The transmission according to claim 1, wherein a ratio t / w of a film thickness t and a width w of the second conductive layer or the strip-shaped conductive layer is 0.5 or less. Line type capacitor.

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