JP5323373B2 - Capacitor type storage battery - Google Patents

Description

  The present invention relates to a capacitor-type storage battery.

Most conventional storage batteries use an electrolyte as described in Patent Document 1, for example.
JP 2008-059955 A

  When an electrolyte is used for a storage battery, charging takes time. Further, since the electrolyte is deteriorated, the life of the storage battery is short. Moreover, in order to implement | achieve a high output voltage, it was necessary to connect a some storage battery in series. On the other hand, when a capacitor is used as a storage battery, the charging time is short, the life is long, and a high output voltage can be realized. However, when a capacitor is used as a storage battery, it is necessary to increase the capacity per unit volume.

  The present invention has been made in consideration of the above circumstances, and an object thereof is to provide a capacitor-type storage battery having a large capacity per unit volume.

According to the present invention, a first conductive path and a second conductive path that are parallel to each other;
An insulating first base material provided on each of the top surface of the first conductive path and the top surface of the second conductive path, and a first conductive powder or a first semiconductor powder dispersed in the first base material A first mixed layer comprising:
A capacitor-type storage battery is provided.

  According to the present invention, it is possible to provide a capacitor-type storage battery having a large capacity per unit volume.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1A is a perspective view of a capacitor-type storage battery according to the first embodiment, and FIG. 1B is a plan view of the storage battery. The storage battery includes conductive paths 21 and 22 that are parallel to each other, and a mixed layer 30 provided on the upper surface of the conductive path 21 and the upper surface of the conductive path 22. The mixed layer 30 has an insulating first base material and a first conductive powder or a first semiconductor powder dispersed in the first base material. When a predetermined voltage difference is applied to the conductive path 21 and the conductive path 22, charges are accumulated. The amount of charge accumulated at this time is large as will be described later. Therefore, a capacitor-type storage battery having a large capacity per unit volume can be provided. In addition, in FIG. 1, although the storage battery is a sheet form, you may wind and use this sheet | seat in a roll shape. Details will be described below.

  In the present embodiment, the mixed layer 30 provided on the upper surface of the conductive path 21 and the mixed layer 30 provided on the upper surface of the conductive path 22 are continuous with each other. The conductive paths 21 and 22 and the mixed layer 30 are formed on the mixed layer 10.

  The mixed layers 10 and 30 have a configuration in which conductive powder or semiconductor powder is dispersed in an insulating base material, and have insulating properties. The substrate is, for example, an organic insulator such as polyester, PET (polyethylene terephthalate), PPC (polyester polycarbonate), vinylidene, polyimide, or polystyrene, but may be an inorganic insulator such as borosilicate glass or soda lime glass. . The conductive powder or semiconductor powder is at least one selected from the group consisting of Fe, Al, Ni, Ag, Mg, Cu, Si, and C, or an alloy or co-polymer consisting of at least two selected from this group. For example, it is a mixed powder in which Al powder and Mg powder are homogeneously mixed. In the mixed layers 10 and 30, the content of the conductive powder or the semiconductor powder is, for example, 30 to 80% by volume.

  Although the thickness of the mixed layers 10 and 30 is 3-100 micrometers, for example, it is preferable that these total values are less than 10 micrometers. When an organic insulator is used as the base material of the mixed layers 10 and 30, the mixed layers 10 and 30 are easily thinned. Moreover, when an inorganic insulator is used as the base material of the mixed layers 10 and 30, the dielectric strength voltage of the mixed layers 10 and 30 can be increased.

  The conductive paths 21 and 22 are made of, for example, copper. The width w of the conductive paths 21 and 22 is, for example, 1 μm or more and 100 mm or less, and the distance d between the conductive paths 21 and 22 is, for example, 1 μm or more and 100 mm or less. The height t of the conductive paths 21 and 22 is, for example, 0.5 to 10 μm. The relationship between the width w of the conductive paths 21 and 22 and the distance d is preferably w / d ≧ 1.5. The relationship between the width w and the height t is t / w ≦ 1, preferably t / w ≦ 0.5.

  Conductive paths 21 and 22 are exposed at one end 10a of the storage battery. Terminals 41 and 42 for applying a voltage to the conductive paths 21 and 22 are connected to the exposed portions, respectively. In the longitudinal direction of the conductive paths 21 and 22, the terminals 41 and 42 are disposed at substantially the same position. When viewed from a direction perpendicular to the mixed layer 10, the conductive paths 21 and 22 are rectangular.

  FIG. 2 is an enlarged view of a part of the cross section of the mixed layers 10 and 30. As shown in FIG. 2A, the conductive powder or the semiconductor powder may be a particulate powder (including a substantially spherical shape, a substantially elliptical sphere shape, and a substantially scaly shape) 8. Further, as shown in FIG. 2B, a mixture of particulate powder 8 and large scaly (substantially sheet-like) powder 9 may be used. Although not shown, only the scaly powder 9 may be used. The average value of the major axis of the particulate powder 8 is, for example, 20 to 10,000 nm, preferably 20 to 1000 nm. The size of the scaly powder 9 is, for example, 150 mesh to 300 mesh.

  Further, as shown in FIG. 2C, at least one of the particulate powder 8 and the scaly powder 9 is mixed in the base material, and a mesh 7 formed of a conductor or a semiconductor is embedded in the base material. But it ’s okay. Moreover, although not shown in figure, the structure which embedded only the mesh 7 in the base material may be sufficient. In this embodiment, the surface of the mesh 7 is covered with an insulating film. The mesh 7 is, for example, at least one selected from the group consisting of Fe, Al, Ni, Ag, Mg, Cu, Si, and C, or at least two alloys or eutectoids selected from this group.

  In the storage battery having the above-described structure, when a predetermined potential difference is applied to the terminals 41 and 42, the photon-surface plasmon of the photon-surface plasmon is generated between the mixed layers 10 and 30 and the electromagnetic field spread between the conductive paths 21 and 22, that is, photons. Energy exchange takes place. For this reason, the speed of the electromagnetic energy flowing in the conductive paths 21 and 22 is reduced, and the equivalent action of increasing the electrical length, that is, the capacity of the storage battery is increased, and the charge accumulated in the storage battery is increased.

  The potential difference between the connection terminals 41 and 42, that is, the upper limit value of the operating voltage of the storage battery is the cumulative thickness of the base material of the mixed layer 30 located between the conductive paths 21 and 22 (= (distance d between the conductive paths 21 and 22) − (Cumulative thickness of the conductive powder or semiconductor powder positioned between the conductive paths 21 and 22)) and the dielectric strength of the base material of the mixed layer 30. That is, the higher the dielectric strength of the base material and the thicker the cumulative thickness of the base material of the mixed layer 30 positioned between the conductive paths 21 and 22, the higher the upper limit value of the operating voltage of the storage battery and the storage battery accumulates. The amount of electricity increases.

  In addition, when the conductive paths 21 and 22 are lengthened, the possibility that a defect is generated in the mixed layers 10 and 30 increases, but a discharge occurs in a portion where the defect exists. This discharge evaporates the insulator of the mixed layer 30 located on the defective portion, so that the defective portion can be prevented from affecting the operation of the storage battery.

  In addition, since the mixed layers 10 and 30 will mutually overlap when wound in roll shape, the mixed layer 30 can also be abbreviate | omitted. In this case, the upper mixed layer 10 acts in the same manner as the mixed layer 30. In this case, an air gap is formed between the conductive paths 21 and 22, but it hardly affects the photon-surface plasmon energy exchange.

  Next, an example of a method for manufacturing the storage battery shown in FIG. 1 will be described. First, conductive powder or semiconductor powder is mixed and dispersed in a varnish such as polyimide or polystyrene serving as a base material to form a powder mixed varnish. Then, the powder mixed varnish is processed into a sheet shape. Thereby, the mixed layer 10 is formed. Next, a conductive film is formed on one side of the mixed layer 10 by sputtering or vapor deposition. The conductive film is, for example, aluminum, but may have a laminated structure of aluminum and titanium. Here, the thickness of aluminum is, for example, 3 to 100 μm, and the thickness of titanium is, for example, 10 to 30 nm. The conductive film may be formed by a laminate lamination method, a chemical vapor phase method, or a liquid phase method (plating).

  Next, the conductive film is selectively removed by, for example, etching using a photolithography method. Thereby, the conductive paths 21 and 22 are formed. Next, the mixed layer 30 is formed by applying a powder mixed varnish on the mixed layer 10 and the conductive paths 21 and 22. In this way, a storage battery is formed.

Next, the reason why the storage battery shown in FIG. 1 has a high capacity will be described. Since the characteristic impedance Z ₀ of the conductive paths 21 and 22 is small as will be described later, the voltage V input from the end portion 10a and transmitted in the long side direction is expressed by the following equation (1).
V = V ₀ × Z ₀ / Z ( ₁ )
Where Z: internal impedance of the power input device, V ₀ : input voltage, Z ₀ : characteristic impedance of the conductive paths 21 and 22.

Here, in the conductive paths 21 and 22, the length from the connection terminals 41 and 42 to the other end is assumed to be l. The input electric power travels through the conductive paths 21 and 22 and is totally reflected at the other end (in an open state) of the conductive paths 21 and 22 and returns. The returned power causes impedance mismatch reflection (reflectance: (Z−Z ₀ ) / (Z + Z ₀ )) at the end 10a which is the input end, and is combined with the AC power continuously input. By repeating this synthesis and reflection, the voltage V transmitted in the long side direction reaches the input voltage V ₀ after a certain time.

Since the input voltage is saturated in the storage battery, the input electric energy U is stored as it is. The electric energy U is obtained by the following equation (2).
U = (1/2) tpd × V ² / Z ₀ (2)
Where tpd: the time required for the electromagnetic wave energy determined by photon-surface plasmon exchange surrounded by the mixed sheet and the mixed layer to pass through the length l.
For this reason, in order to determine the amount of power stored in the conductive paths 21 and 22, it is necessary to determine the characteristic impedance Z ₀ and the passage time tpd of the conductive paths 21 and 22.

The characteristic impedance Zo of the conductive paths 21 and 22 can be approximated by the following equation (3).
Z ₀ = [ln [(π (dw) / (w + t)) + 1] / π] × √ [(μ ₀ μ _ω ) / (ε ₀ ε _ω )] ... (3)
Where t = thickness of the conductive paths 21 and 22, d = center distance (pitch) between the conductive paths 21 and 22, w = one width of the conductive paths 21 and 22, μ ₀ : permeability in vacuum, μ _ω : Relative permeability of mixed layer 10 and mixed layer 30 at frequency ω, ε ₀ : dielectric constant in vacuum, ε _ω : dielectric constant of mixed layer 10 and mixed layer 30 at frequency ω.
Therefore, in order to determine the characteristic impedance Z ₀ of the conductive path 21 and 22, it is necessary to obtain the mu _omega and epsilon _omega.

According to the dielectric function formula and permeability function expression of Drude, epsilon _omega and mu _omega is expressed by the following equation (4) to (7) below.
ε _ω = 1− (ω _ep ² / ω ² ) ... (4)
^{_{ω ep 2 ≡ (n e e}} 2) / (ε 0 m) ... (5)
μ _ω = 1− (ω _mp ² / ω ² ) ... (6)
ω _mp ² ≡ (n _p χ ² ) / (μ ₀ m) ... (7)
Where n _e : density of free electrons of mixed layer 10 and mixed layer 30, n _p : density of unpaired electrons of storage battery, e: charge amount of electrons, m: mass of electrons, χ: spin magnetic susceptibility of unpaired electrons .

Here, a case is considered in which conductive powder composed of Fe spherical particles having a radius of 1 μm is uniformly dispersed in an insulator at a density of 1/125 μm ³ .

When Fe has one free electron per atom, the density of iron free electrons is 8.4 × 10 ²² / cm ³ . The free electron density on the surface of iron is 2/3, that is, 1.9 × 10 ¹⁵ / cm ² . However, since free electrons are trapped in the surface adsorbed atoms, the surface free electron density is lower than this value. Assuming that the reduction rate of free electrons by this trap is 10 ⁻¹⁰ , the density of free electrons on the surface of iron is 1.9 × 10 ⁵ / cm ² .

The radius of the conductive particles is 1 μm = 1 × 10 ⁻⁵ cm, but the surface area is 4π (1 × 10 ⁻⁵ ) ² = 12.6 × 10 ⁻¹⁰ cm ² , so the amount of free electrons per particle Is 2.39 × 10 ⁻⁴ . Since the density of the conductive powder in the insulator is 1 piece / 125 μm ³ , the density of free electrons in the mixed layer 10 and the mixed layer 30 is n _e = 1.9 × 10 ¹⁷ pieces / m ³ .

Electron mass m = 9.11 × 10 ⁻³¹ kg, electron charge amount e = 1.6 × 10 ⁻¹⁹ C, and dielectric constant ε ₀ = 8.85 × 10 ⁻¹² F / m in vacuum. Substituting these values and _ne = 1.9 × 10 ¹⁷ pieces / m ³ into equation (5), ω _ep ² = 1.9 × 10 ¹⁷ × (1.6 × 10 ⁻¹⁹ ) ² / ( 8.85 × 10 ⁻¹² × 9.11 × 10 ⁻³¹ ) = 0.038 × 10 ²² and ω _ep = 1.9 × 10 ¹⁰ / s. Thus, ω _ep is a frequency in the microwave region.

Here, when ω is a direct current, the expression (3) diverges. Therefore, assuming that ω = 60 Hz (commercial frequency), ε _ω = 1− (1.9 × 10 ¹⁰ ) ² / (2π × 60) ² = 1−2.54 × 10 ¹⁵ = −2.54 × 10 ¹⁵ , which is a large negative value of ε _r <−10 ⁷ . Here, considering industrialization, further considering deterioration of about 5 digits, ε _ω = −10 ¹⁰ .

On the other hand, μ _ω is assumed to be −10. This value is reasonable for the following reasons: As described above, the free electron density on the surface of iron is 1.9 × 10 ¹⁵ atoms / cm ² . Among these, if the probability of occurrence of unpaired electrons is 10 ⁻¹⁵ , the density n _{p of} unpaired electrons on the iron surface is 1.9 / cm ² . Since the unpaired electron has a spin magnetic permeability χ = 2.07 × 10 ⁻¹⁰ [Wb] and a magnetic permeability μ ₀ = 1.25 × 10 ⁻⁶ [N / A ⁻² ], the equation (7) Ω _mp ² = 1.9 × 10 ¹⁰ × (2.07 × 10 ⁻¹⁵ ) ² /(1.25×10 ⁻⁶ × 9.11 × 10 ⁻³¹ ) = 7.16 × 10 ¹⁶ / s ² , ω _mp = 2.67 × 10 ⁸ / s.

Similarly, in order to prevent the divergence of the equation, assuming that ω = 60 Hz (commercial frequency), μ _ω = 1− (2.67 × 10 ⁸ ) ² / (2π × 60) ² = 1−5.02 × 10 ¹¹ = −5.02 × 10 ¹¹ is obtained. From this, it can be seen that even if μ _ω = −10, this value is sufficiently possible.

Then, assuming that t = 0.001 m, w = 0.005 m, d = 0.001 m, and substituting these values, μ _ω = −10, and ε _ω = −10 ¹⁰ into the equation (3), Z ₀ = 0.5√377 × 10 ⁻⁹ = 9.7 × 10 ⁻⁹ Ω is obtained.

Moreover, tpd is calculated | required by (8) Formula.
_{tpd = l × √ (ε ω} μ ω) / c 0 ··· (8)
Where c ₀ = speed of light.
Here, when ε _ω = −10 ¹⁰ and μ _ω = −10, tpd = 10/3 × 10 ⁸ / √10 × 10 ¹⁰ = 1.05 × 10 ⁻² [s]. When a commercial voltage of 100 V is used, U = 1.08 × 10 ¹⁰ [J] ([Ws]) = 3 × 10 ⁶ [Wh] is obtained from Equation (2). The energy of 60 liters of gasoline is 500 kWh, but the energy storage amount is three orders of magnitude larger than this. In addition, when it is necessary to shorten the charging time of a storage battery, what is necessary is just to reduce the energy storage amount of a storage battery.

  When the distance d between the conductive paths 21 and 22 is 100 μm and the content of the conductive powder or semiconductor powder is 80% by volume, the accumulated thickness of the base material between the conductive paths 21 and 22 is 20 μm. In this case, a withstand voltage of 1000 V or more can be realized regardless of whether the substrate is an inorganic insulator or an organic insulator. For this reason, the storage battery according to the present embodiment has high reliability.

  Each figure in FIG. 3 is a diagram schematically showing the spread of the electromagnetic field generated from the conductive paths 21 and 22. As the electric lines of force and the lines of magnetic force run farther away, the mutual coupling of the conductive paths 21 and 22 becomes weaker and it is easier to exchange with other energy. That is, if the area of the portion where the conductive paths 21 and 22 face each other is reduced, the photons, which are the quantized units of electromagnetic waves, can be efficiently converted to other energy (for example, surface plasmon or surface magnon), and the capacity of the storage battery is increased. can do. For this reason, as shown in FIG. 3A, the cross sections of the conductive paths 21 and 22 are substantially circular, and the cross section of the conductive paths 21 and 22 has a height to width ratio of 1 or less (preferably 0). .5 or less), the capacity of the storage battery can be increased.

  Further, when an electric field is applied to the surface of the conductor or the surface of the semiconductor, free electrons on the surface cause surface plasmon resonance, and paramagnetic magnetons cause surface magnon resonance, so that photon energy is absorbed. Plasmons and magnons are oscillated by electrons, so that their propagation speed propagates at the same order of speed as that of lattice vibrations, that is, at a speed close to the sound speed of the medium (a speed that is five orders of magnitude slower than the speed of light). For this reason, the photon energy absorbed by the surface plasmon resonance and the surface magnon resonance increases, which is one of the reasons that the capacity of the storage battery in the present embodiment increases.

  As described above, according to the present embodiment, it is possible to provide a capacitor-type storage battery having a large capacity per unit volume. In particular, in the conductive paths 21 and 22, when the ratio t / w of the height t to the width w is 1 or less, the capacity of the storage battery increases. In the conductive paths 21 and 22, the mixed layer 30 in contact with the upper surface is continuous with each other, and the mixed layer 10 in contact with the lower surface is also continuous with each other. Therefore, manufacture of a storage battery becomes easy. Moreover, this storage battery can be used with either alternating current or direct current.

  FIG. 4 is a plan view showing the configuration of the storage battery according to the second embodiment, and FIG. 5 is a cross-sectional view in the width direction of the storage battery shown in FIG. In this storage battery, a plurality of conductive paths 21 and 22 are alternately provided on the mixed layer 10, and a plurality of conductive paths 21 are connected to the same terminal 41, and a plurality of conductive paths 22 are connected to the same terminal 42. Except for the point connected, it is the same as that of the storage battery concerning 1st Embodiment. The relationship between the width w of the conductive paths 21 and 22 forming a pair and the distance d between them is preferably w / d ≧ 1.5. When the distance between the conductive paths 21 and 22 not forming a pair is s, it is desirable that s / d ≧ 1. Hereinafter, the same components as those of the first embodiment are denoted by the same reference numerals, and description thereof is omitted.

  When viewed from a direction perpendicular to the mixed layer 10, the terminals 41 and 42 partially overlap each other, but since the insulating layer 52 is located between the terminals 41 and 42, the insulation between each other is It is secured. Each of the terminals 41 and 42 has a portion that becomes narrower as the distance from the conductive paths 21 and 22 increases. In this portion, an angle θ formed by two sides extending from the conductive paths 21 and 22 is 30 ° or less. is there. Thereby, the resistance loss of the power at the terminals 41 and 42 can be reduced.

  Further, although the terminal 41 is directly connected to the conductive path 21, the terminal 42 is connected to the conductive path 22 through the through electrode 60. The through electrode 60 passes through the insulating layer 51 provided on the terminal 41 and the conductive paths 21 and 22. The terminal 42 is located on the insulating layer 51.

  Next, a method for manufacturing the terminals 41 and 42 will be described. A terminal 41 is connected to the conductive path 21 exposed from the mixed layer 30. Next, the insulating layer 51 is bonded or applied on the conductive paths 21 and 22 and the terminal 41. Next, an opening is formed in the insulating layer 51 by photolithography, and the through electrode 60 is embedded in the opening. Next, after the insulating layer 52 is positioned on the terminal 41, the terminal 42 is connected to the through electrode 60.

  Also according to this embodiment, the same effect as that of the first embodiment can be obtained. Since the number of the conductive paths 21 and 22 is increased, the capacity of the storage battery is further increased.

  FIG. 6 is a cross-sectional view illustrating the configuration of the storage battery according to the third embodiment. The storage battery according to this embodiment is the same as that of the first embodiment or the second embodiment except that insulating layers 21a and 22a are formed on the entire surface of the conductive paths 21 and 22. Hereinafter, the same components as those of the first embodiment are denoted by the same reference numerals, and description thereof is omitted.

  Also according to this embodiment, the same effect as that of the first embodiment can be obtained. Moreover, since the insulating layers 21a and 22a are formed on the surfaces of the conductive paths 21 and 22, the withstand voltage of the storage battery can be increased. Moreover, even if the mesh shown in FIG. 2C has conductivity, the conductive paths 21 and 22 can be prevented from being short-circuited.

  FIG. 7 is a cross-sectional view showing the configuration of the storage battery according to the fourth embodiment. The storage battery according to this embodiment is the same as any one of the first to third embodiments except that the insulating layer 12 is provided on the lower surface of the mixed layer 10. Hereinafter, the same reference numerals are given to the same configurations as those of the embodiments, and the description thereof is omitted.

  Also according to the present embodiment, the same effects as in any of the first to third embodiments can be obtained. Moreover, when the storage battery is wound in a roll shape, the mixed layers 10 and 30 can be prevented from coming into direct contact.

  Note that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention. For example, in each of the above-described embodiments, an insulating sheet that causes surface plasmon resonance and surface magnon resonance may be used instead of the mixed layer 10.

  Conductive paths 21 and 22 were formed on the upper surface of the printed wiring board. Further, a mixed paste was prepared by mixing aluminum powder having an average particle diameter of 14 μm and nickel flakes having a long diameter of the order of 15 to 20 μm (thickness 1 μm) into the silicone resin in the same weight ratio. Then, the mixed paste was applied onto the printed wiring board and the conductive paths 21 and 22, and the capacity was measured (Example). Moreover, the capacity | capacitance of the conductive paths 21 and 22 in the state which does not apply | coat mixed paste was also measured (comparative example).

  The measurement results are shown in Table 1.

  From these, it was shown that the capacity increased several orders of magnitude simply by applying the mixed paste on one side.

(A) is a perspective view of the capacitor type storage battery according to the first embodiment, and (B) is a plan view of the storage battery. Each figure is an enlarged view of a part of the cross section of the mixed layers 10 and 30. Each figure is a figure which shows typically the breadth of the electromagnetic field emitted from the conductive paths 21 and 22. FIG. It is a top view which shows the structure of the storage battery concerning 2nd Embodiment. It is sectional drawing of the width direction of the storage battery shown in FIG. It is sectional drawing explaining the structure of the storage battery concerning 3rd Embodiment. It is sectional drawing which shows the structure of the storage battery concerning 4th Embodiment.

Explanation of symbols

7 mesh 8 particulate powder 9 scaly powder 10 mixed layer 10a end 12 insulating layer 21 conductive path 21a insulating layer 22 conductive path 22a insulating layer 30 mixed layer 41 terminal 42 terminal 51 insulating layer 52 insulating layer 60 penetrating electrode

Claims (8)

Ri parallel der each other, a plurality of first conductive path and a plurality of second conductive paths are alternately arranged,
An insulating first base material provided on each of the top surface of the first conductive path and the top surface of the second conductive path, and a first conductive powder or a first semiconductor powder dispersed in the first base material A first mixed layer comprising:
A first terminal connected to the plurality of first conductive paths;
A second terminal connected to the plurality of second conductive paths;
Equipped with a,
The first terminal and the second terminal have a portion whose width becomes narrower as the distance from the first conductive path and the second conductive path increases. In this part, the first terminal and the second terminal extend in the same direction as the first conductive path. two sides, der Ru capacitor type storage battery angle formed together less than 30 ° to. The capacitor-type storage battery according to claim 1,
The first conductive path and the second conductive path are capacitor-type storage batteries in which a ratio t / w of a height t to a width w is 1 or less. The capacitor-type storage battery according to claim 1,
A capacitor-type storage battery in which the first mixed layer provided on the upper surface of the first conductive path and the first mixed layer provided on the upper surface of the second conductive path are continuous with each other. The capacitor-type storage battery according to claim 1,
An insulating second base material provided on the lower surface of the first conductive path and the lower surface of the second conductive path; and a second conductive powder or a second semiconductor powder dispersed in the second base material; A capacitor-type storage battery comprising a second mixed layer having: The capacitor type storage battery according to claim 4,
A capacitor-type storage battery further comprising an insulating layer provided on a lower surface of the second mixed layer. The capacitor-type storage battery according to claim 1,
The first conductive path and the second conductive path are capacitor-type storage batteries having an insulating layer on a surface in contact with the first mixed layer.   The capacitor type storage battery according to claim 1, wherein the first conductive powder or the first semiconductor powder has an average particle size of 20 to 10,000 nm.   2. The capacitor-type storage battery according to claim 1, wherein the first conductive powder or the first semiconductor powder is at least one selected from the group consisting of Fe, Al, Ni, Ag, Mg, Cu, Si, and C. 3. Or a capacitor-type storage battery comprising an alloy or eutectoid composed of at least two selected from the above group.

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