JP2010028267A - 撮像装置 - Google Patents
撮像装置 Download PDFInfo
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- JP2010028267A JP2010028267A JP2008184596A JP2008184596A JP2010028267A JP 2010028267 A JP2010028267 A JP 2010028267A JP 2008184596 A JP2008184596 A JP 2008184596A JP 2008184596 A JP2008184596 A JP 2008184596A JP 2010028267 A JP2010028267 A JP 2010028267A
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- 238000003384 imaging method Methods 0.000 title claims abstract description 39
- 238000006243 chemical reaction Methods 0.000 claims abstract description 48
- 238000012545 processing Methods 0.000 claims abstract description 17
- 239000011159 matrix material Substances 0.000 claims description 5
- 239000012528 membrane Substances 0.000 claims 1
- 230000002950 deficient Effects 0.000 abstract description 15
- 238000000034 method Methods 0.000 description 18
- 239000000463 material Substances 0.000 description 7
- 238000001514 detection method Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000004886 process control Methods 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- AQCDIIAORKRFCD-UHFFFAOYSA-N cadmium selenide Chemical compound [Cd]=[Se] AQCDIIAORKRFCD-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/68—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to defects
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
冷陰極アレイの不良電子放出画素、光電変換膜の残留電荷画素等の欠陥画素を正確に検出できる撮像装置を提供する。また、当該検出画素の情報に基づいて、電子放出制御及び撮像データ補間処理を正確に行うことが可能な撮像装置を提供する。
【解決手段】
電子放出源アレイと光電変換膜の中間に設けられた中間電極に電子放出源アレイの電位に対し正なる電位を印加するとともに、中間電極に流れる電流を検出する中間電極電流検出器を有している。中間電極電流検出器は、電子放出源の各々を点順次走査するクロック信号に同期して電子放出源の各々に対応する中間電極電流を検出する。
【選択図】 図4
Description
パイオニアR&D誌、Vol.17, No.2, 2007,pp.61-69
[撮像装置の構成及び動作]
図4は、本実施例の撮像装置50の構成を模式的に示す図である。撮像装置50には、光電変換信号検出器であるHARP信号検出器51、及びメッシュ電極信号検出器(以下、MESH信号検出器ともいう。)52が設けられている。また、信号補間処理部53及び冷陰極アレイ制御部54が設けられている。図4には、信号補間処理部53及び冷陰極アレイ制御部54がコントローラ25の一部として設けられている場合を模式的に示しているが、コントローラ25とは別個に設けられていてもよいのはもちろんである。HARP信号検出器51及びMESH信号検出器52により検出されたHARP信号及びメッシュ電極信号はコントローラ25に供給される。
Ih+Im=Ie (1)
Ie×κ=Ih(MAX), Ie×(1−κ)=Im(MIN) (2)
0.9×Ih(MAX)=Ih(th), 1.1×Im(MIN)=Im(th) (3)
また、判別基準式は、
Ih>Ih(th) 又は Im<Im(th) (4)
Ie<ε (5)
である。
11 光電変換膜
15 メッシュ電極
20 HEED冷陰極アレイ
22 Y走査ドライバ
23 X走査ドライバ
24 冷陰極アレイチップ
25 コントローラ
31 HEED部
33 下部電極
34 シリコン(Si)層
36 上部電極
51 光電変換信号検出器
52 中間電極信号検出器
53 信号補間処理部
54 冷陰極アレイ制御部
56 外部電源回路
Claims (6)
- 複数の電子放出源がマトリクス状に配置された電子放出源アレイと、前記電子放出源アレイに対向して配置された光電変換膜と、前記電子放出源アレイと前記光電変換膜の中間に設けられた中間電極と、を備え、前記電子放出源アレイから前記光電変換膜に向けて放出された電子の一部が光入射によって前記光電変換膜に生成された正孔と結合することによって流れる光電変換膜電流を映像信号の出力として得る撮像装置であって、
前記中間電極に前記電子放出源アレイの電位に対し正なる電位を印加するとともに、前記中間電極に流れる電流を検出する中間電極電流検出器を有することを特徴とする撮像装置。 - 前記中間電極電流検出器は、前記マトリクス状に配置された前記電子放出源の各々を点順次走査するクロック信号に同期して前記電子放出源の各々に対応する前記中間電極電流を検出することを特徴とする請求項1に記載の撮像装置。
- 前記中間電極電流と前記光電変換膜電流の値に基づいて、放出電子量が前記光電変換膜に生成された正孔量に満たない電子放出源を判別する残留正孔判別部を有することを特徴とする請求項1又は2に記載の撮像装置。
- 前記中間電極電流と前記光電変換膜電流の値に基づいて、前記電子放出源の各々の放出電子量を判別する放出電子量判別部を有することを特徴とする請求項1乃至3のいずれか1に記載の撮像装置。
- 前記映像信号の出力期間以外のブランキング期間において、前記残留正孔判別部により判別された電子放出源の追加電子放出駆動を行う駆動制御部を有することを特徴とする請求項3又は4に記載の撮像装置。
- 前記放出電子量が規定値に達しない前記電子放出源に対応する映像信号データの補間をなす信号補間処理部を有することを特徴とする請求項4又は5に記載の撮像装置。
Priority Applications (2)
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JP2008184596A JP5106284B2 (ja) | 2008-07-16 | 2008-07-16 | 撮像装置 |
US12/504,241 US8203112B2 (en) | 2008-07-16 | 2009-07-16 | Image sensing device |
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JP2008184596A JP5106284B2 (ja) | 2008-07-16 | 2008-07-16 | 撮像装置 |
Publications (2)
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JP2010028267A true JP2010028267A (ja) | 2010-02-04 |
JP5106284B2 JP5106284B2 (ja) | 2012-12-26 |
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JP2008184596A Expired - Fee Related JP5106284B2 (ja) | 2008-07-16 | 2008-07-16 | 撮像装置 |
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US (1) | US8203112B2 (ja) |
JP (1) | JP5106284B2 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016009484A1 (ja) * | 2014-07-14 | 2016-01-21 | パイオニア株式会社 | 電子放出素子アレイ、撮像装置および電子放出素子アレイの製造方法 |
WO2016157332A1 (ja) * | 2015-03-27 | 2016-10-06 | パイオニア株式会社 | 撮像装置 |
JP2016184948A (ja) * | 2016-05-26 | 2016-10-20 | パイオニア株式会社 | 撮像装置、内視鏡装置および撮像装置の制御方法 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110278435A1 (en) * | 2009-01-09 | 2011-11-17 | Pioneer Corporation | Image sensor apparatus |
JP2015515091A (ja) * | 2012-03-16 | 2015-05-21 | ナノックス イメージング ピーエルシー | 電子放出構造を有する装置 |
WO2014027294A2 (en) | 2012-08-16 | 2014-02-20 | Nanox Imaging Ltd. | Image capture device |
US20140125809A1 (en) * | 2012-11-02 | 2014-05-08 | Syntronics, Llc | Digital ruvis camera |
EP3075000A4 (en) | 2013-11-27 | 2017-07-12 | Nanox Imaging Plc | Electron emitting construct configured with ion bombardment resistant |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06176704A (ja) * | 1992-12-02 | 1994-06-24 | Nippon Hoso Kyokai <Nhk> | 撮像装置及びその動作方法 |
JPH07302574A (ja) * | 1994-05-10 | 1995-11-14 | Hitachi Ltd | 集束イオンビーム加工観察装置 |
JP2000048743A (ja) * | 1998-05-26 | 2000-02-18 | Futaba Corp | 平面形撮像装置及びその製造方法 |
JP2009513972A (ja) * | 2005-10-26 | 2009-04-02 | テトラ ラバル ホールデイングス エ フイナンス ソシエテ アノニム | 電子ビームを感知するための露出導体システム及び方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5011788B2 (ja) * | 2005-06-17 | 2012-08-29 | セイコーエプソン株式会社 | 電気光学装置、駆動方法および電子機器 |
JP5066392B2 (ja) * | 2007-05-21 | 2012-11-07 | 日本放送協会 | 撮像装置 |
-
2008
- 2008-07-16 JP JP2008184596A patent/JP5106284B2/ja not_active Expired - Fee Related
-
2009
- 2009-07-16 US US12/504,241 patent/US8203112B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06176704A (ja) * | 1992-12-02 | 1994-06-24 | Nippon Hoso Kyokai <Nhk> | 撮像装置及びその動作方法 |
JPH07302574A (ja) * | 1994-05-10 | 1995-11-14 | Hitachi Ltd | 集束イオンビーム加工観察装置 |
JP2000048743A (ja) * | 1998-05-26 | 2000-02-18 | Futaba Corp | 平面形撮像装置及びその製造方法 |
JP2009513972A (ja) * | 2005-10-26 | 2009-04-02 | テトラ ラバル ホールデイングス エ フイナンス ソシエテ アノニム | 電子ビームを感知するための露出導体システム及び方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016009484A1 (ja) * | 2014-07-14 | 2016-01-21 | パイオニア株式会社 | 電子放出素子アレイ、撮像装置および電子放出素子アレイの製造方法 |
WO2016157332A1 (ja) * | 2015-03-27 | 2016-10-06 | パイオニア株式会社 | 撮像装置 |
JP2016184948A (ja) * | 2016-05-26 | 2016-10-20 | パイオニア株式会社 | 撮像装置、内視鏡装置および撮像装置の制御方法 |
Also Published As
Publication number | Publication date |
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US8203112B2 (en) | 2012-06-19 |
US20100025568A1 (en) | 2010-02-04 |
JP5106284B2 (ja) | 2012-12-26 |
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