JP2010028133A - Heat treatment apparatus of workpiece, and evacuation method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To secure the uniformity of temperature in a workpiece plane by not only effectively removing desorption gas but also suitably controlling air flow disturbance in a heat treatment chamber. <P>SOLUTION: A heat treatment apparatus includes: a heat treatment chamber 104 of which the side surface an opening/closing shutter 110 for conveying the workpiece is formed on; an exhaust path 113 formed externally around the heat treatment chamber 104 including the opening/closing shutter 110; and an exhaust hole 101 through which the heat treatment chamber 104 is evacuated from the exhaust path 113 through the opening/closing shutter 110. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a heat treatment apparatus for an object to be processed and an exhaust method thereof, and more particularly to a heat treatment apparatus for an object to be processed having an exhaust hole for exhausting a heat treatment chamber of the object to be processed and an exhaust method thereof. .

  In recent years, there has been an increasing demand for higher performance and higher integration of devices. For this reason, in the semiconductor manufacturing process, techniques for pattern miniaturization and large-diameter semiconductor wafers are remarkably developed. However, with the miniaturization of the pattern and the increase in the diameter of the semiconductor wafer, it is difficult to ensure the uniformity of the dimensions of the fine element pattern within the surface of the large-diameter semiconductor wafer. These dimensional accuracy has a high correlation with the reliability of semiconductor devices and the yield of semiconductor devices. For example, various baking processes performed in the resist coating process and the development process in the photolithography process have a large effect on the dimensional accuracy of the element pattern. One of the factors that give In particular, in KrF excimer lithography that is generally employed in a mass production process of less than a quarter micron, a chemically amplified resist is used as a resist material. It is an important parameter.

  For this reason, in the baking process in the process using this chemically amplified resist, it is necessary to keep the temperature distribution constant in order to ensure the dimensional accuracy in the plane of the semiconductor wafer. Therefore, the temperature of the semiconductor wafer must be kept uniform in the plane by the heater in the hot plate chamber, and the air flow in the hot plate chamber must be strictly controlled.

  Furthermore, recently, various resist shrink technologies such as the thermal shrink method have been actively developed. However, when such technology is introduced into an actual production line, more precise bake temperature control than before has been achieved. Necessary.

  For example, the resist coating apparatus includes a plurality of units such as a hot plate unit, a cooling unit, and a coating unit, and the developing apparatus includes a plurality of units such as a hot plate unit, a cooling unit, and a developing unit.

  Below, the schematic of the heat processing apparatus of the conventional to-be-processed object is demonstrated based on FIG.9 and FIG.10. In addition, FIG. 9 is sectional drawing which shows the structure of the heat processing apparatus of the conventional to-be-processed object. FIG. 10 is a top view showing a configuration of a conventional heat treatment apparatus for an object to be processed.

  As shown in FIGS. 9 and 10, a conventional heat treatment apparatus for a target object includes a heat treatment chamber (for example, a hot plate chamber) 604 for heat-treating a semiconductor wafer (target object) 609. A support base 605 provided at the bottom of the heat treatment chamber 604 is provided with support pins 606 capable of moving up and down to carry and mount the semiconductor wafer 609. A heater 607 for heating the semiconductor wafer for baking is provided below the semiconductor wafer 609.

  In addition, an opening / closing shutter 610 that opens and closes in order to carry the semiconductor wafer 609 into the heat treatment chamber 604 is provided on a side surface of the heat treatment chamber 604. Further, an exhaust hole 601 is formed in the upper part of the heat treatment chamber, and the exhaust 602 is discharged to the outside through the manual damper 612.

  A conventional heat treatment method for an object to be processed by the heat treatment apparatus for the object to be processed will be described.

  When heat treatment (for example, baking processing) is performed in each heat treatment chamber (hot plate chamber), the open / close shutter 610 of the heat treatment chamber 604 is opened, and the semiconductor wafer 609 is transferred to the heat treatment chamber 604 by the transfer robot. . At this time, the support pins 606 are waiting at the raised position, and the transferred semiconductor wafer 609 is placed on the support pins 606.

  Next, the support pins 606 are lowered to place the semiconductor wafer 610 at a predetermined position for heat treatment (for example, baking treatment). Thereafter, the open / close shutter 610 is closed, and the baking process is performed by heating the heater 607 while exhausting through the exhaust hole 601 provided in the upper part of the heat treatment chamber 603.

  However, when an exhaust hole is provided in the upper part of the heat treatment chamber (above the semiconductor wafer) as in the conventional heat treatment apparatus (hot plate apparatus), the heat treatment chamber has a difference depending on the position of the exhaust hole and the diameter of the exhaust hole. There is a problem that the temperature distribution of the semiconductor wafer becomes non-uniform due to the change in the air flow. For this reason, it is difficult to strictly control the temperature accuracy in the semiconductor wafer surface, and the uniformity of the temperature in the semiconductor wafer surface deteriorates as the exhaust pressure during the baking process increases.

  As described above, in order to improve the temperature accuracy in the hot plate, controlling the air flow in the hot plate is an important factor. However, in various baking furnaces, suitable exhaust cannot be performed and The air flow was disturbed, and the uniformity of the in-plane temperature of the semiconductor wafer deteriorated.

  At this time, if the exhaust is weakened in order to suppress the turbulence of the air flow in the heat treatment chamber, desorbed components such as a solvent and a monomer from the resist, which is the original purpose of the exhaust, are not sufficiently removed. For this reason, there is a problem that the desorbed gas diffuses into the peripheral unit and contaminates each device such as a resist coating device, a developing device, an exposure device, or a semiconductor wafer. In this way, the heat treatment apparatus itself can cause contamination of the clean room.

  Accordingly, an object of the present invention is to provide a novel apparatus capable of effectively removing the desorbed gas and appropriately controlling the turbulence of the air flow in the heat treatment chamber to ensure the uniformity of the in-plane temperature of the workpiece. And it is providing the heat processing apparatus of the to-be-processed object improved.

  In order to solve the above problems, a heat treatment chamber in which an opening / closing shutter for conveying an object to be processed is formed and an outer periphery of the heat treatment chamber is formed, and the exhaust of the heat treatment chamber is exhausted through the opening / closing shutter. There is provided a heat treatment apparatus for an object to be processed, characterized in that it has an exhaust path for guiding the exhaust gas to the outside and an exhaust hole for discharging the exhaust gas of the heat treatment chamber guided from the exhaust path to the outside.

  In the present invention, during the baking process of an object to be processed (for example, a semiconductor wafer) in a heat treatment chamber (for example, a hot plate chamber), exhaust is not performed directly from the heat treatment chamber, but is exhausted from the outside of the heat treatment chamber through an open / close shutter. As a result, the air flow is not disturbed by the exhaust in the heat treatment chamber, and the temperature uniformity in the plane of the workpiece can be improved. As a result, the dimensional accuracy of the element pattern is improved. In addition, since the exhaust in the heat treatment chamber is performed, the desorbed gas of the object to be processed does not diffuse into the peripheral device or the like.

  In order to solve the above-described problem, there is provided a heat treatment apparatus for an object to be processed in which a plurality of heat treatment chambers each having an opening / closing shutter for conveying an object to be processed are stacked in a vertical direction. An exhaust passage formed around the heat treatment chamber for guiding exhausts of the plurality of stacked heat treatment chambers to exhaust holes collectively through the open / close shutters of the heat treatment chamber; and from the exhaust passage There is provided a heat treatment apparatus for an object to be processed, characterized by having an exhaust hole for discharging the exhaust of the plurality of guided heat treatment chambers to the outside.

  In the present invention, since the exhaust system is simplified even with a heat treatment apparatus equipped with a plurality of heat treatment chambers, it is possible to provide a heat treatment apparatus that is inexpensive and easy to maintain. In addition, during baking processing of an object to be processed (for example, a semiconductor wafer) in a heat processing chamber (for example, a hot plate chamber), exhaust is not performed directly from the heat processing chamber, but is performed from outside the heat processing chamber through an open / close shutter. In the heat treatment chamber, the air flow is not disturbed by the exhaust, and the temperature uniformity in the plane of the object to be processed can be improved. As a result, the dimensional accuracy of the element pattern is improved. In addition, since the exhaust in the heat treatment chamber is performed, the desorbed gas of the object to be processed does not diffuse into the peripheral device or the like.

  In order to solve the above-mentioned problem, a heat treatment apparatus having an exhaust means for exhausting a heat treatment chamber of an object to be processed, wherein the exhaust means corresponds to a preset exhaust pressure or a preprogrammed exhaust pressure, There is provided a heat treatment apparatus for an object to be treated, which is capable of automatically adjusting the exhaust pressure of the heat treatment chamber.

  In the present invention, the exhaust amount during the heat treatment of the object to be processed (for example, a semiconductor wafer) can be suitably changed or stopped according to the exhaust pressure in the heat treatment chamber. Therefore, for example, during the heat treatment of the object to be processed (for example, a semiconductor wafer), it is possible to execute a sequence process such as lowering the exhaust pressure, and the accuracy of the in-plane temperature of the object to be processed is improved.

  In order to solve the above-described problem, a heat treatment apparatus having a heat treatment chamber for heat-treating an object to be processed, wherein an air flow in the heat treatment chamber is abbreviation of the object to be processed. There is provided a heat treatment apparatus for an object to be processed, characterized in that a plurality of exhaust holes are provided so as to be substantially uniform on a plane.

  In the present invention, since the airflow in the heat treatment chamber can be suitably adjusted, the temperature distribution in the plane of the object to be processed (for example, a semiconductor wafer) can be easily controlled.

  Further, it is preferable that the plurality of exhaust holes are configured so as to be substantially concentrically provided in the upper part of the heat treatment chamber.

  In order to solve the above problems, a heat treatment apparatus having a heat treatment chamber for heat-treating an object to be processed, wherein a plurality of exhaust holes provided in the heat treatment chamber and an arbitrary exhaust gas among the plurality of exhaust holes. A shielding plate capable of shielding the hole, and by selecting an exhaust hole for exhausting the heat treatment chamber through the shielding plate, an air flow in the heat treatment chamber There is provided a heat treatment apparatus for an object to be processed, characterized by being substantially uniform on a substantially flat surface.

  In the present invention, it is possible to suitably adjust the air flow in the heat treatment chamber by selecting a suitable exhaust hole according to the process of various heat treatment conditions (for example, baking conditions). Thus, the temperature distribution in the plane of the object to be processed (for example, a semiconductor wafer) can be easily controlled.

  Further, it is preferable that the plurality of exhaust holes are configured so as to be substantially concentrically provided in the upper part of the heat treatment chamber.

  Further, if the shielding plate is formed in a substantially concentric shape, the temperature distribution in the plane of the object to be processed can be controlled by more effectively suppressing the air flow in the heat treatment chamber.

  In order to solve the above-described problem, a heat treatment apparatus having a heat treatment chamber for heat-treating an object to be processed, the plurality of exhaust holes provided in the heat treatment chamber of the object to be processed, and provided in each of the exhaust holes An exhaust hole diameter adjusting means capable of adjusting the diameter of the exhaust hole formed, and adjusting the diameter of each exhaust hole via the exhaust hole diameter adjusting means, thereby allowing the air flow in the heat treatment chamber to flow into the object to be processed. It is possible to provide a heat treatment apparatus for an object to be processed, characterized in that it can be made substantially uniform on a substantially flat surface.

  In the present invention, the exhaust hole diameter can be suitably changed according to the process of various heat treatment conditions (for example, baking conditions), and the airflow in the heat treatment chamber can be adjusted more finely. This makes it possible to more easily control the temperature distribution in the plane of the object to be processed (for example, a semiconductor wafer).

  Further, it is preferable that the plurality of exhaust holes are configured so as to be substantially concentrically provided in the upper part of the heat treatment chamber.

  In order to solve the above-described problem, an exhaust method for a heat treatment apparatus having a heat treatment chamber in which an opening / closing shutter for conveying an object to be processed is formed, wherein the exhaust of the heat treatment chamber passes through the opening / closing shutter, The exhaust gas is guided to an exhaust path formed in the outer periphery of the heat treatment chamber, and the exhaust gas guided to the exhaust path is discharged to the outside from an exhaust hole provided at a predetermined position of the exhaust path. An exhaust method of a heat treatment apparatus for an object is provided.

  In the present invention, during the baking process of an object to be processed (for example, a semiconductor wafer) in a heat treatment chamber (for example, a hot plate chamber), exhaust is not performed directly from the heat treatment chamber, but is exhausted from the outside of the heat treatment chamber through an open / close shutter. As a result, the air flow is not disturbed by the exhaust in the heat treatment chamber, and the temperature uniformity in the plane of the object to be treated can be improved. As a result, the dimensional accuracy of the element pattern is improved. In addition, since the exhaust in the heat treatment chamber is performed, the desorbed gas of the object to be processed does not diffuse into the peripheral device or the like.

  In order to solve the above-described problem, there is provided a method for exhausting a heat treatment apparatus for a plurality of heat treatment chambers in which a plurality of heat treatment chambers each having a plurality of opening and closing shutters for transporting a treatment object are formed in a vertical direction. Exhaust gas from the heat treatment chambers is guided to the same exhaust passage formed around the plurality of heat treatment chambers through the open / close shutters of the plurality of heat treatment chambers, and then led to the same exhaust passage. An exhaust method of the heat treatment apparatus for an object to be processed is provided, wherein the exhausted air is collectively discharged from an exhaust hole provided at a predetermined position of the same exhaust path.

  In the present invention, since the exhaust system is simplified even with a heat treatment apparatus equipped with a plurality of heat treatment chambers, it is possible to provide a heat treatment apparatus that is inexpensive and easy to maintain. In addition, during baking processing of an object to be processed (for example, a semiconductor wafer) in a heat processing chamber (for example, a hot plate chamber), exhaust is not performed directly from the heat processing chamber, but is performed from outside the heat processing chamber through an open / close shutter. In the heat treatment chamber, the air flow is not disturbed by the exhaust, and the temperature uniformity in the plane of the object to be processed can be improved. As a result, the dimensional accuracy of the element pattern is improved. In addition, since the exhaust in the heat treatment chamber is performed, the desorbed gas of the object to be processed does not diffuse into the peripheral device or the like.

  In order to solve the above-described problem, there is provided an exhaust method for a heat treatment apparatus having an exhaust means for exhausting a heat treatment chamber for heat-treating an object to be processed, wherein the exhaust means has a preset exhaust pressure or a preprogrammed value. There is provided a method of exhausting a heat treatment apparatus for an object to be processed, characterized in that exhaust of the heat treatment chamber is executed by automatically adjusting the exhaust pressure of the heat treatment chamber according to the exhaust pressure.

  In the present invention, the exhaust amount during the heat treatment of the object to be processed (for example, a semiconductor wafer) can be suitably changed or stopped according to the exhaust pressure in the heat treatment chamber. Therefore, for example, during the heat treatment of the object to be processed (for example, a semiconductor wafer), it is possible to execute a sequence process such as lowering the exhaust pressure, and the accuracy of the in-plane temperature of the object to be processed is improved.

  In order to solve the above-described problem, an exhaust method for a heat treatment apparatus having a heat treatment chamber for heat-treating an object to be processed, the exhaust of the heat treatment chamber is an air flow in the heat treatment chamber that is substantially the same as that of the object to be processed. There is provided an exhaust method for a heat treatment apparatus for an object to be processed, which is executed through a plurality of exhaust holes provided so as to be substantially uniform on a plane.

  In the present invention, since the airflow in the heat treatment chamber can be suitably adjusted, the temperature distribution in the plane of the object to be processed (for example, a semiconductor wafer) can be easily controlled.

  Further, it is preferable that the plurality of exhaust holes are configured so as to be substantially concentrically provided in the upper part of the heat treatment chamber.

  In order to solve the above problems, there is provided an exhaust method for a heat treatment apparatus having a heat treatment chamber for heat-treating an object to be processed, wherein the heat treatment chamber includes a plurality of exhaust holes and an arbitrary one of the plurality of exhaust holes. A shielding plate capable of shielding the exhaust hole of the heat treatment chamber is provided, and the exhaust of the heat treatment chamber allows the air flow in the heat treatment chamber to flow on the substantially plane of the object to be treated via the shield plate. There is provided an exhaust method for a heat treatment apparatus for an object to be processed, which is executed by selecting exhaust holes so as to be substantially uniform.

  In the present invention, it is possible to suitably adjust the air flow in the heat treatment chamber by selecting a suitable exhaust hole according to the process of various heat treatment conditions (for example, baking conditions). Thus, the temperature distribution in the plane of the object to be processed (for example, a semiconductor wafer) can be easily controlled.

  Further, it is preferable that the plurality of exhaust holes are configured so as to be substantially concentrically provided in the upper part of the heat treatment chamber.

  Further, if the shielding plate is formed in a substantially concentric shape, the temperature distribution in the plane of the object to be processed can be controlled by more effectively suppressing the air flow in the heat treatment chamber.

  In order to solve the above-described problem, an exhaust method of a heat treatment apparatus having a heat treatment chamber for heat-treating an object to be processed, wherein the heat treatment chamber has a plurality of exhaust holes and the diameter of each of the exhaust holes is adjusted. Possible exhaust hole diameter adjusting means, and the exhaust of the heat treatment chamber makes the air flow in the heat treatment chamber substantially uniform on a substantially plane of the object to be processed through the exhaust hole diameter adjusting means. Thus, there is provided a method of exhausting a heat treatment apparatus for an object to be processed, which is executed by adjusting the diameter of each exhaust hole.

  In the present invention, the exhaust hole diameter can be suitably changed according to the process of various heat treatment conditions (for example, baking conditions), and the airflow in the heat treatment chamber can be adjusted more finely. This makes it possible to more easily control the temperature distribution in the plane of the object to be processed (for example, a semiconductor wafer).

  Further, it is preferable that the plurality of exhaust holes are configured so as to be substantially concentrically provided in the upper part of the heat treatment chamber.

  Further, there is provided a method for exhausting a heat treatment apparatus having a heat treatment chamber for heat-treating an object to be treated, the step of exhausting the heat treatment chamber before the heat treatment of the object to be treated, and the exhaust of the heat treatment chamber And a step of performing heat treatment of the object to be treated, and a step of exhausting the heat treatment chamber after the heat treatment of the object to be treated. An exhaust method is provided.

  In the present invention, since the heat treatment chamber is not evacuated during the heat treatment of the object to be treated, no air flow is generated by the exhaust, and the temperature distribution in the plane of the object to be treated (for example, a semiconductor wafer) is easily controlled. be able to.

  According to the present invention, since the turbulence of the airflow due to the exhaust does not occur in the heat treatment chamber, the temperature uniformity in the plane of the object to be processed can be improved. As a result, the dimensional accuracy of the element pattern is improved. In addition, since the exhaust in the heat treatment chamber is performed, the desorbed gas of the object to be processed does not diffuse into the peripheral device or the like.

It is sectional drawing which shows schematic structure of the heat processing apparatus of the to-be-processed object concerning 1st Embodiment. It is a top view which shows schematic structure of the heat processing apparatus of the to-be-processed object concerning 1st Embodiment. It is sectional drawing which shows schematic structure of the heat processing apparatus of the to-be-processed object concerning 2nd Embodiment. It is a top view which shows schematic structure of the heat processing apparatus of the to-be-processed object concerning 2nd Embodiment. It is sectional drawing which shows schematic structure of the heat processing apparatus of the to-be-processed object concerning 3rd Embodiment. It is sectional drawing which shows schematic structure of the heat processing apparatus of the to-be-processed object concerning 4th Embodiment. It is sectional drawing which shows schematic structure of the heat processing apparatus of the to-be-processed object concerning 5th Embodiment. It is a top view which shows schematic structure of the heat processing apparatus of the to-be-processed object concerning 5th Embodiment. It is sectional drawing which shows schematic structure of the heat processing apparatus of the to-be-processed object in the past. It is a top view which shows schematic structure of the heat processing apparatus of the to-be-processed object in the past.

  DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, preferred embodiments of the invention will be described in detail with reference to the accompanying drawings. In the following description and the accompanying drawings, components having the same function and configuration are denoted by the same reference numerals, and redundant description is omitted.

(First embodiment)
First, a heat treatment apparatus for an object to be processed according to the first embodiment will be described with reference to FIGS. FIG. 1 is a cross-sectional view illustrating a configuration of a heat treatment apparatus for a target object according to the first embodiment. FIG. 2 is a top view showing the configuration of the heat treatment apparatus for the object to be processed according to the first embodiment.

  First, as shown in FIGS. 1 and 2, the heat treatment apparatus for an object to be processed according to this embodiment includes a heat treatment chamber 104 for heat-treating an object to be processed (for example, a semiconductor wafer) 109. An opening / closing shutter 110 that is opened and closed when the semiconductor wafer 109 is carried into the heat treatment chamber 104 is provided on a side surface of the heat treatment chamber 104. A support table 105 provided at the bottom of the heat treatment chamber 104 is provided with support pins 106 that can move up and down to carry and mount the semiconductor wafer 109. A heater 107 that heats the semiconductor wafer 109 is provided below the semiconductor wafer 109 for baking.

  Further, the outer periphery of the heat treatment chamber 104 including the opening / closing shutter 110 is covered with a unit housing 103, and an exhaust path 113 is formed between the heat treatment chamber 104 and the unit housing 103. Further, an exhaust hole 101 is formed in the exhaust passage 113 above the heat treatment chamber 104, and the exhaust 102 is discharged to the outside through the manual damper 112.

  In the present embodiment, unlike the conventional case, the heat treatment chamber 104 is not provided with an exhaust hole for exhausting directly from the heat treatment chamber 104, and is provided outside the heat treatment chamber 104 via the opening / closing shutter 110. Exhaust is performed from the exhaust hole 101 formed. For this reason, the turbulence of the airflow due to the exhaust does not occur in the heat treatment chamber 104, and the temperature uniformity in the plane of the object 109 is improved. As a result, the dimensional accuracy of the element pattern can be improved. Further, since the exhaust in the heat treatment chamber 104 is being performed, the desorbed gas of the object to be processed 109 does not diffuse into the peripheral device or the like.

  A heat treatment method for the object to be processed by the heat treatment apparatus for the object to be processed will be described.

  First, the opening / closing shutter 110 of the heat treatment chamber (for example, hot plate chamber) 104 is opened, and the semiconductor wafer 109 is transferred to the heat treatment chamber 104 by, for example, a transfer robot. At this time, the support pin 106 stands by at the raised position, and the object to be processed (for example, a semiconductor wafer) 109 is placed on the support pin 106.

  Next, the support pins 106 are lowered, and the semiconductor wafer 109 is placed at a predetermined position for heat treatment (baking treatment). Thereafter, the open / close shutter 110 is closed, and the semiconductor wafer 109 is heated by the heater 107 while being evacuated through the exhaust hole 101 provided in the exhaust path 113 of the heat treatment chamber 104 to perform the baking process. At this time, the heat treatment chamber 104 is indirectly evacuated from the gap of the opening / closing shutter 110.

  In the present embodiment, unlike the conventional apparatus, during the baking process of the semiconductor wafer 109, the exhaust hole 101 is not exhausted from the inside of the heat treatment chamber 104 via the exhaust path 113 provided on the outer periphery of the opening / closing shutter 110. Exhaust more.

  After the baking process of the semiconductor wafer 109 is completed, the opening / closing shutter 110 is opened, and the semiconductor wafer 109 is transferred to the next processing unit.

  In this embodiment, during the baking process of an object to be processed (for example, a semiconductor wafer) in the heat treatment chamber (hot plate chamber), the exhaust gas is not exhausted directly from the heat treatment chamber, but is exhausted outside the heat treatment chamber via the open / close shutter. As a result, the air flow is not disturbed by the exhaust in the heat treatment chamber, and the temperature uniformity in the plane of the object to be treated is improved. As a result, the dimensional accuracy of the element pattern is improved. In addition, since the exhaust in the heat treatment chamber is performed, the desorbed gas of the object to be processed does not diffuse into the peripheral device or the like.

(Second Embodiment)
In an ordinary heat treatment apparatus, a plurality of heat treatment chambers are provided, but in the apparatus according to the first embodiment, it is necessary to provide an exhaust hole for each heat treatment chamber. In the present embodiment, two or more heat treatment chambers can be exhausted collectively.

  Hereinafter, a second embodiment will be described with reference to FIG. FIG. 3 is a cross-sectional view showing the configuration of the heat treatment apparatus for the object to be processed according to the present embodiment.

  First, as shown in FIG. 3, the heat treatment apparatus for an object to be treated according to the present embodiment is different from the first embodiment in that a plurality of heat treatment chambers 204 for heat treating the semiconductor wafer 209 are installed. Yes.

  On the side surface of each heat treatment chamber 204, an opening / closing shutter 210 is provided that opens and closes when an object to be processed (for example, a semiconductor wafer) 209 is carried into the heat treatment chamber 204. A support table 205 provided at the bottom of the heat treatment chamber 204 is provided with support pins 206 that can move up and down to carry and mount the semiconductor wafer 209. A heater 207 that heats the semiconductor wafer 209 for baking is provided below the semiconductor wafer 209.

  Further, the outer periphery of the plurality of heat treatment chambers 204 including all the open / close shutters 210 is covered with a unit casing 203, and an exhaust path 213 is formed between each heat treatment chamber 204 and the unit casing 203. ing. At this time, the heat treatment chamber 204 is indirectly exhausted from the gap of the opening / closing shutter 210. Further, an exhaust hole 201 is formed in the exhaust path 213 above the uppermost heat treatment chamber, and the exhaust 202 is discharged to the outside via the manual damper 212.

  In the present embodiment, a plurality of heat treatment chambers are formed as one unit, and an exhaust path 213 is formed between an outer wall (unit housing) 203 that is covered so as to be isolated from other processing units. Exhaust is performed through an exhaust hole 201 provided in the.

  In the present embodiment, since the exhaust system is simplified even in a heat treatment apparatus equipped with a plurality of heat treatment chambers (hot plate chambers), a low-cost and easy-to-maintain heat treatment apparatus is provided. Can do. Further, during the baking process of the object to be processed (for example, a semiconductor wafer) in the heat treatment chamber, the heat treatment chamber is not evacuated directly, but is evacuated from the outside of the heat treatment chamber via each open / close shutter. Airflow turbulence does not occur due to exhaust, and the temperature uniformity in the plane of the workpiece can be improved. As a result, the dimensional accuracy of the element pattern is improved. In addition, since the exhaust in the heat treatment chamber is performed, the desorbed gas of the object to be processed does not diffuse into the peripheral device or the like.

(Third embodiment)
In the conventional heat treatment apparatus, since the exhaust pressure is fixed by a manual damper and the exhaust is performed, the airflow in the heat treatment chamber cannot be adjusted appropriately. The heat treatment apparatus for an object to be processed according to the present embodiment employs a manual damper (manual adjustment exhaust valve) in a conventional apparatus and an auto damper that can arbitrarily change the exhaust pressure via an exhaust controller. Since the other points are the same as those of the conventional apparatus, description thereof is omitted.

  Hereinafter, the third embodiment will be described with reference to FIG. In addition, FIG. 4 is sectional drawing which shows the structure of the heat processing apparatus of the to-be-processed object concerning this embodiment.

  First, as shown in FIG. 4, an exhaust hole 301 is formed in the upper part of the heat treatment chamber 304, and the exhaust 302 of the heat treatment chamber 304 is discharged to the outside via an auto damper (automatic adjustment exhaust valve) 313. The Further, an exhaust pressure sensor 312 is installed between the exhaust hole 301 and the auto damper 313, and the detected value of the exhaust pressure sensor 312 is input to the exhaust controller 314 to adjust the opening degree of the auto damper 313. .

  The exhaust controller 314 can switch ON / OFF of the auto damper 313 or set an arbitrary exhaust pressure value. For example, by using an auto damper or an air operated valve, it is possible to execute a sequence in which the exhaust is stopped or a low exhaust pressure is set during the heat treatment of the semiconductor wafer and the exhaust is performed at a high exhaust pressure other than the heat treatment. It is also possible to switch the exhaust line on / off.

  In the present embodiment, the exhaust pressure can be suitably changed or stopped during the heat treatment of the object to be processed (for example, a semiconductor wafer). Therefore, for example, during the heat treatment of the object to be processed (for example, a semiconductor wafer), it is possible to execute a sequence process such as lowering the exhaust pressure, and the accuracy of the in-plane temperature of the semiconductor wafer is improved.

(Fourth embodiment)
The air flow in the heat treatment chamber caused by exhaust generally depends on the exhaust pressure and the baking temperature, the position of the exhaust hole, the size of the exhaust hole, and the like. In the present embodiment, it is possible to adjust the air flow in the heat treatment chamber by providing a plurality of exhaust holes in the heat treatment chamber and selecting the exhaust holes via the shielding plate according to the heat treatment conditions such as the baking treatment conditions. it can.

  The heat treatment apparatus for an object to be processed according to the present embodiment is different from the conventional apparatus in that a plurality of exhaust holes can be installed and the exhaust holes can be selected via a shielding plate. The other points are the same as those of the conventional apparatus, and the description thereof is omitted.

  Hereinafter, a fourth embodiment will be described with reference to FIGS. 5 and 6. In addition, FIG. 5 is sectional drawing which shows the structure of the heat processing apparatus of the to-be-processed object concerning this embodiment. FIG. 6 is a top view showing the configuration of the heat treatment apparatus for the object to be processed according to the present embodiment.

  First, as shown in FIGS. 5 and 6, a plurality of exhaust holes 401 are formed in the upper portion of the heat treatment chamber 404, and the exhaust 402 of the heat treatment chamber 404 is discharged to the outside via the manual damper 412. The Further, for example, a substantially concentric shielding plate 415 is provided above the exhaust hole 401, and a predetermined exhaust hole 401 is shielded to select the exhaust hole 401 used for exhaust.

  As described above, the airflow in the heat treatment chamber (for example, hot plate chamber) due to exhaust generally depends on the exhaust pressure and bake temperature, the position of the exhaust hole, the size of the exhaust hole, etc. In many cases, the temperature distribution in the plane of the processing body (for example, a semiconductor wafer) is substantially concentric. For this reason, in this embodiment, by installing a plurality of exhaust holes and selecting the exhaust holes to be used for exhaust by the substantially concentric shielding plate, the air flow in the heat treatment chamber can be adjusted according to the baking conditions. Temperature uniformity in the semiconductor wafer plane is improved.

  In the above embodiment, a suitable exhaust hole can be selected according to the process of various heat treatment conditions (for example, bake conditions), and the airflow in the heat treatment chamber can be suitably adjusted. Thus, the temperature distribution in the plane of the object to be processed (for example, a semiconductor wafer) can be easily controlled.

(Fifth embodiment)
In the fourth embodiment, the exhaust hole used for exhaust is selected through the shielding plate, but it is difficult to finely adjust the airflow in the heat treatment chamber. In the present embodiment, each exhaust hole diameter is adjusted by an exhaust hole diameter adjusting means such as a throttle installed in each exhaust hole.

  The heat treatment apparatus for an object to be processed according to this embodiment is different from the conventional apparatus in that a plurality of exhaust holes are provided and the diameters of the exhaust holes are adjusted by the exhaust hole diameter adjusting means provided in the exhaust holes. Since the other points are the same as those of the conventional apparatus, description thereof is omitted.

  Hereinafter, a fifth embodiment will be described with reference to FIGS. In addition, FIG. 7 is sectional drawing which shows the structure of the heat processing apparatus of the to-be-processed object concerning this embodiment. FIG. 8 is a top view showing the configuration of the heat treatment apparatus for the object to be processed according to the present embodiment.

  First, as shown in FIGS. 7 and 8, a plurality of exhaust holes 501 are formed in the upper portion of the heat treatment chamber 504, and the exhaust 502 in the heat treatment chamber 504 is discharged to the outside via the manual damper 512. The Each exhaust hole 502 is provided with a predetermined exhaust hole diameter adjusting means, and the exhaust hole diameter can be adjusted as desired according to heat treatment conditions such as baking conditions.

  As the exhaust hole diameter adjusting means, for example, a structure constricted like a diaphragm of a camera or a structure like a sliding door can be used.

  In the present embodiment, the exhaust hole diameter can be suitably changed according to the process of various heat treatment conditions (for example, bake conditions), and the airflow in the heat treatment chamber can be adjusted more finely. This makes it possible to more easily control the temperature distribution in the plane of the object to be processed (for example, a semiconductor wafer).

  The preferred embodiment according to the present invention has been described above, but the present invention is not limited to such a configuration. A person skilled in the art can assume various modifications and changes within the scope of the technical idea described in the claims, and the modifications and changes are also within the technical scope of the present invention. It is understood that it is included in

  For example, the processing apparatus for the object to be processed according to the above-described embodiment has been described by taking a hot plate used in a lithography process at the time of manufacturing a semiconductor device as an example, but is not limited to such an example. It can be implemented as a technique for improving temperature accuracy in a heat treatment apparatus for a workpiece in any industrial field.

  In the fourth embodiment, the configuration using the substantially concentric shielding plate has been described as an example. However, any shape of the shielding plate can be used.

  In the fourth embodiment, the configuration in which a suitable exhaust hole is selected using a shielding plate has been described as an example. However, the size, position, etc. of the exhaust hole are adjusted and preferably arranged. As a result, it is possible to execute suitable exhaust without using a shielding plate.

  In the above embodiment, the method for controlling the air flow in the heat treatment chamber has been described from the viewpoint of the position of the exhaust hole in the heat treatment chamber, the preferred arrangement and selection of the exhaust holes, the adoption of the auto damper, etc. In the heat treatment apparatus according to the embodiment and the conventional heat treatment apparatus, the heat treatment chamber is exhausted before and after the heat treatment of the object to be processed, and the heat treatment chamber is exhausted during the heat treatment of the object to be processed. By not having this, the airflow in the heat treatment chamber during the heat treatment can be easily controlled.

DESCRIPTION OF SYMBOLS 101 Exhaust hole 102 Exhaust 103 Unit housing 104 Heat processing chamber 105 Support stand 106 Support pin 107 Heater 108 Semiconductor wafer guide 109 Semiconductor wafer 110 Opening / closing shutter 111 Volatile substance 112 Manual damper 113 Exhaust path 312 Exhaust pressure sensor 313 Auto damper 314 Auto controller 415 Shielding plate 515 Aperture

Claims (4)

A heat treatment apparatus having a heat treatment chamber for heat-treating a workpiece,
A plurality of exhaust holes provided in the heat treatment chamber of the object to be treated;
Exhaust hole diameter adjusting means capable of adjusting the diameter of the exhaust hole provided in each of the exhaust holes,
By adjusting the diameter of each exhaust hole via the exhaust hole diameter adjusting means, it is possible to make the air flow in the heat treatment chamber substantially uniform on a substantially flat surface of the object to be processed.
A heat treatment apparatus for an object to be processed. The heat treatment apparatus for a target object according to claim 1 , wherein the plurality of exhaust holes are provided substantially concentrically in the upper part of the heat treatment chamber. An exhaust method of a heat treatment apparatus having a heat treatment chamber for heat-treating a workpiece,
The heat treatment chamber is provided with a plurality of exhaust holes and exhaust hole diameter adjusting means capable of adjusting the diameter of each exhaust hole,
Exhaust of the heat treatment chamber is performed by adjusting the diameter of each exhaust hole through the exhaust hole diameter adjusting means so that the air flow in the heat treatment chamber is substantially uniform on a substantially plane of the object to be processed. Done,
An exhaust method of a heat treatment apparatus for a target object. The exhaust method of the heat treatment apparatus for a target object according to claim 3 , wherein the plurality of exhaust holes are provided substantially concentrically in the upper part of the heat treatment chamber.

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