JP2010028079A - Aqueous dispersion for chemical mechanical polishing, manufacturing method of the same, and chemical mechanical polishing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an aqueous dispersion for chemical mechanical polishing, and a chemical mechanical polishing method using the same which reduce a polishing speed for a low-permittivity insulation film, achieve both high polishing speed and high planarization characteristics for an interlayer insulation film (a cap layer) such as a TEOS film, and suppress generation of surface defects such as dishing, erosion, scratch, and fang. <P>SOLUTION: The aqueous dispersion for chemical mechanical polishing contains (A) silica particles, (B) an organic acid, and (C) a nonionic surfactant. The silica particles (A) have such a chemical property that a silanol group density thereof as calculated based on a specific surface area measured by using a BET method and an amount of silanol groups measured by titration is 1.0-3.0 pieces/nm<SP>2</SP>. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

The present invention relates to an aqueous dispersion for chemical mechanical polishing, a method for producing the same, and a chemical mechanical polishing method.

  In recent years, the use of a low dielectric constant interlayer insulating film (hereinafter also referred to as “low dielectric constant insulating film”) has been studied in order to prevent an increase in signal delay due to the multilayer wiring of a semiconductor device. As such a low dielectric constant insulating film, for example, materials described in Patent Document 1 and Patent Document 2 have been studied. When the low dielectric constant insulating film as described above is used as the interlayer insulating film, copper or copper alloy is usually used because the wiring material is required to have high conductivity. When manufacturing such a semiconductor device by the damascene method, it is usually necessary to remove the wiring material on the barrier metal film by chemical mechanical polishing (first polishing process), and then remove the barrier metal film by polishing. Accordingly, it is necessary to perform a step of further polishing and planarizing the wiring material and the interlayer insulating film (second polishing step).

  In the first polishing process, a characteristic for polishing the wiring material at a high speed is required, but in the second polishing process, a characteristic for polishing the surface to be polished smoothly is particularly required. In order to further improve the flatness of the surface to be polished in the second polishing step, a change in the design of the semiconductor device structure has been studied. Specifically, when using a low dielectric constant insulating film having low mechanical strength, (1) surface defects called peeling or scratches are generated on the surface to be polished by chemical mechanical polishing, and (2) fine When polishing a wafer having a wiring structure, the polishing rate of the low dielectric constant insulating film is remarkably increased, so that it is impossible to obtain a flat and highly accurate finished surface. (3) Barrier metal film and low dielectric constant For example, a structure in which a coating film called a cap layer made of silicon dioxide or the like is formed as an upper layer of a low dielectric constant insulating film has been studied for reasons such as poor adhesion to the dielectric insulating film.

  In the second polishing step in such a structure, it is necessary to quickly polish and remove the upper cap layer to suppress the polishing rate of the lower low dielectric constant insulating film as much as possible. That is, the relationship between the cap layer polishing rate (RR1) and the low dielectric constant insulating film polishing rate (RR2) is required to satisfy RR1> RR2.

  On the other hand, in order to prevent breakdown of the low dielectric constant insulating film and interfacial delamination with other laminated materials, there is a method of reducing the frictional force applied to the wafer by reducing the applied pressure during polishing. However, in this method, since the polishing speed is lowered by reducing the applied pressure during polishing, the production efficiency of the semiconductor device is significantly reduced. In order to solve this problem, Patent Document 3 describes a technique that can improve the polishing rate by including a water-soluble polymer in the chemical mechanical polishing aqueous dispersion. It could not be said that the polishing rate in the second polishing step was sufficient. As described above, there has been a demand for the development of a new aqueous dispersion for chemical mechanical polishing that has a high polishing rate and high planarization characteristics for the barrier metal film and the cap layer while preventing damage to the low dielectric constant insulating film. .

JP 2001-308089 A JP 2001-298023 A International Publication No. 2007/116770 Pamphlet

  An object of the present invention is to reduce the polishing rate for a low dielectric constant insulating film, achieve both a high polishing rate and a high planarization characteristic for an interlayer insulating film (cap layer) such as a TEOS film, and dishing, erosion, and scratching. An aqueous dispersion for chemical mechanical polishing capable of suppressing the occurrence of surface defects such as fangs, and a chemical mechanical polishing method using the same.

  The “fang” is a new problem to be solved by the present invention. Hereinafter, “Fang” will be described in detail.

  In this specification, “fang” is a phenomenon that occurs particularly when the metal film is made of copper or a copper alloy, and includes a region containing copper or copper alloy fine wiring and a copper or copper alloy fine wiring. This refers to a polishing defect in which dishing or erosion is locally generated by chemical mechanical polishing at the interface with a region (field portion) that does not contain.

  One factor causing fangs is that the components contained in the chemical mechanical polishing aqueous dispersion are non-uniform at the interface between the region containing fine copper or copper alloy wiring and the region not containing copper or copper alloy fine wiring. It is considered that the vicinity of the interface is excessively polished. For example, if the abrasive grain component contained in the chemical mechanical polishing aqueous dispersion is present at a high concentration in the vicinity of the interface, the polishing rate at the interface is locally increased and excessively polished. Thus, when it grind | polishes excessively, a flatness defect will appear. That is, this is a polishing defect called “fang”.

  Although there are various forms of fang depending on the wiring pattern, the cause of the fang to be solved by the present invention will be specifically described using the object 100 shown in FIGS. 1 to 4 as an example.

  As shown in FIG. 1, the object to be processed 100 includes an insulating film 12 having a wiring recess 20 such as a groove formed on a substrate 10, the surface of the insulating film 12, and the bottom and inner wall surfaces of the wiring recess 20. The barrier metal film 14 provided so as to cover the wiring recess 20 is filled, and a film 16 made of copper or a copper alloy formed on the barrier metal film 14 is sequentially laminated. Moreover, the to-be-processed object 100 contains the area | region 22 containing the fine wiring of copper or a copper alloy, and the area | region 24 which does not contain the fine wiring of copper or a copper alloy. In the region 22 including the fine wiring, a convex portion of copper or copper alloy is easily formed as shown in FIG.

  FIG. 2 shows a state after the film 16 made of copper or a copper alloy is polished by chemical mechanical polishing until the barrier metal film 14 appears on the surface. At this stage, fangs have not yet occurred.

  FIG. 3 shows a state after the barrier metal film 14 is shaved and chemical mechanical polishing is performed until the insulating film 12 appears on the surface. When the barrier metal film 14 is subjected to chemical mechanical polishing, fine scratches 26 may be generated at the interface between the region 22 including the fine wiring of copper or copper alloy and the region 24 not including the fine wiring of copper or copper alloy.

  FIG. 4 shows a state after further performing chemical mechanical polishing and cutting the insulating film 12. At this stage, the fine scratch 26 becomes a groove-like scratch fang 28.

  This fang may be a defect as a semiconductor device, which is not preferable from the viewpoint of reducing the yield of semiconductor device manufacturing.

  The chemical mechanical polishing aqueous dispersion according to the present invention is a chemical mechanical polishing aqueous dispersion containing (A) silica particles, (B) an organic acid, and (C) a nonionic surfactant. The (A) silica particles have the following chemical properties.

The silanol group density calculated from the specific surface area measured using the BET method and the amount of silanol groups measured by titration is 1.0 to 3.0 / nm ² .

  In the chemical mechanical polishing aqueous dispersion according to the invention, the (C) nonionic surfactant may have at least one acetylene group.

  In the chemical mechanical polishing aqueous dispersion according to the invention, the (C) nonionic surfactant may be a compound represented by the following general formula (1).

（式中、ｍおよびｎはそれぞれ独立に１以上の整数であり、ｍ＋ｎ≦５０を満たす。）

(In the formula, m and n are each independently an integer of 1 or more and satisfy m + n ≦ 50.)

  In the chemical mechanical polishing aqueous dispersion according to the invention, the (B) organic acid may be an organic acid having two or more carboxyl groups.

  In the chemical mechanical polishing aqueous dispersion according to the invention, the organic acid having two or more carboxyl groups may be at least one selected from tartaric acid, fumaric acid, malonic acid, and maleic acid.

  In the chemical mechanical polishing aqueous dispersion according to the invention, the silica particles (A) may have the following chemical properties.

  Sodium, potassium and ammonium ion content measured from elemental analysis by ICP emission spectrometry or ICP mass spectrometry and quantitative analysis of ammonium ion by ion chromatography, sodium content: 5 to 500 ppm, potassium and ammonium ion The content of at least one selected from: satisfies the relationship of 100 to 20000 ppm.

  In the chemical mechanical polishing aqueous dispersion according to the invention, the ratio (Rmax / Rmin) of the major axis (Rmax) to the minor axis (Rmin) of the (A) silica particles is 1.0 to 1.5. Can do.

  In the chemical mechanical polishing aqueous dispersion according to the present invention, the average particle diameter calculated from the specific surface area of the (A) silica particles measured using the BET method may be 10 nm to 100 nm.

  The chemical mechanical polishing aqueous dispersion according to the present invention may further contain a water-soluble polymer.

  In the chemical mechanical polishing aqueous dispersion according to the present invention, the pH may be 6-12.

  A chemical mechanical polishing method according to the present invention polishes a surface to be polished of a semiconductor device having at least one selected from a metal film, a barrier metal film, and an insulating film, using the chemical mechanical polishing aqueous dispersion. It is characterized by that.

  The method for producing an aqueous dispersion for chemical mechanical polishing according to the present invention comprises mixing at least (A) silica particles, (B) an organic acid, and (C) a nonionic surfactant to provide chemical mechanical polishing water. A method for producing a system dispersion, wherein the (A) silica particles have the following chemical properties.

The silanol group density calculated from the specific surface area measured using the BET method and the amount of silanol groups measured by titration is 1.0 to 3.0 / nm ² .

  According to the chemical mechanical polishing aqueous dispersion, the polishing rate for the low dielectric constant insulating film is reduced, the high polishing rate for the interlayer insulating film (cap layer) such as the TEOS film is compatible with the high planarization characteristics, and The occurrence of surface defects such as dishing, erosion, scratches or fangs can be suppressed.

It is sectional drawing for demonstrating the generation | occurrence | production process of a fang. It is sectional drawing for demonstrating the generation | occurrence | production process of a fang. It is sectional drawing for demonstrating the generation | occurrence | production process of a fang. It is sectional drawing for demonstrating the generation | occurrence | production process of a fang. It is the conceptual diagram which showed the major axis and minor axis of the silica particle typically. It is the conceptual diagram which showed the major axis and minor axis of the silica particle typically. It is the conceptual diagram which showed the major axis and minor axis of the silica particle typically. It is sectional drawing which showed the to-be-processed object used for the chemical mechanical polishing method of this invention. It is sectional drawing for demonstrating the grinding | polishing process of the chemical mechanical grinding | polishing method of this invention. It is sectional drawing for demonstrating the grinding | polishing process of the chemical mechanical grinding | polishing method of this invention. It is sectional drawing for demonstrating the grinding | polishing process of the chemical mechanical grinding | polishing method of this invention.

  Hereinafter, preferred embodiments of the present invention will be described in detail.

1. Chemical Mechanical Polishing Aqueous Dispersion The chemical mechanical polishing aqueous dispersion according to this embodiment is a chemical containing (A) silica particles, (B) an organic acid, and (C) a nonionic surfactant. The aqueous dispersion for mechanical polishing, wherein the silica particles (A) are “the silanol group density calculated from the specific surface area measured using the BET method and the amount of silanol groups measured by titration is 1.0 ˜3.0 / nm ² ”. First, each component constituting the chemical mechanical polishing aqueous dispersion according to this embodiment will be described.

1.1 (A) Silica Particle The “silanol group” of the silica particle in the present embodiment refers to a hydroxyl group directly bonded to a silicon atom on the surface of the silica particle, and the configuration or configuration is not particularly limited. Moreover, the production | generation conditions of a silanol group etc. are not ask | required.

The “silanol group density” in the present embodiment is the number of silanol groups per unit area on the surface of the silica particles, and serves as an index representing the electrical characteristics or chemical characteristics of the surface of the silica particles. In the chemical mechanical polishing aqueous dispersion, the silanol group is normally negatively charged because H ⁺ of SiOH is removed and is stably present in the SiO ⁻ state. Thereby, the electrical characteristics or chemical characteristics of the silica particles are developed. The unit of silanol group density is expressed in units / nm ² .

  The silanol group density of (A) silica particles used in the present embodiment is calculated from the surface area of silica particles measured using the BET method and the amount of silanol groups measured by titration. The silanol group amount of the silica particles can be determined by a generally known potentiometric titration, an aqueous dispersion of silica particles as described in the 2005 Precision Engineering Society Spring Conference Academic Lecture Proceedings p847-848, or It can be measured by titrating a chemical mechanical polishing aqueous dispersion in which silica particles are dispersed with a known base such as sodium hydroxide.

The silica particles (A) used in this embodiment have a silanol group density of 1.0 to 3.0 / nm ² , more preferably 1.1 to 2.8 / nm ² , and particularly preferably. Is 1.2 to 2.6 pieces / nm ² . When the silanol group density is within the above range, the additive or component such as organic acid or water-soluble polymer contained in the chemical mechanical polishing aqueous dispersion is attracted or rejected due to the electrical or chemical characteristics of the silica particle surface. To do. As a result, the additive component in the chemical mechanical polishing aqueous dispersion produces a minute concentration gradient around the silica particles, forming an optimal chemical mechanical polishing aqueous dispersion to achieve good polishing characteristics. Can be considered.

In addition, when the silanol group density is within the above range, the chemical mechanical polishing aqueous dispersion is moderately stabilized by the interaction between the silica particles and other additives in the chemical mechanical polishing aqueous dispersion. It becomes possible to disperse stably in the interior, and no agglomeration that causes defects occurs during polishing. If the silanol group density exceeds 3.0 / nm ² , such a balanced dispersion state cannot be obtained, which is not preferable because an insufficient polishing rate ratio and insufficient planarization characteristics are obtained. On the other hand, when the silanol group density is less than 1.0 / nm ² , the dispersion stability of the silica particles in the chemical mechanical polishing aqueous dispersion is inferior, the silica particles are aggregated, and the storage stability is deteriorated. It is not preferable.

  The silica particles (A) used in the present embodiment can preferably contain sodium in an amount of 5 to 500 ppm, more preferably 10 to 400 ppm, and particularly preferably 15 to 300 ppm. Furthermore, 100-20000 ppm can be contained at least one selected from potassium and ammonium ions. When said (A) silica particle contains potassium, content of potassium becomes like this. Preferably it is 100-20000 ppm, More preferably, it is 500-15000 ppm, Most preferably, it is 1000-10000 ppm. When said (A) silica particle contains ammonium ion, content of ammonium ion becomes like this. Preferably it is 100-20000 ppm, More preferably, it is 200-10000 ppm, Most preferably, it is 500-8000 ppm. Further, even when potassium or ammonium ions contained in the silica particles (A) are not within the above range, the total content of potassium and ammonium ions is preferably 100 to 20000 ppm, more preferably 500 to 15000 ppm, particularly preferably. Should just exist in the range of 1000-10000 ppm.

  If the sodium content exceeds 500 ppm, wafer contamination after polishing occurs, which is not preferable. On the other hand, in order to make sodium less than 5 ppm, it is necessary to perform the ion exchange treatment a plurality of times, which involves technical difficulties.

  If at least one selected from potassium and ammonium ions exceeds 20000 ppm, the pH of the silica particle dispersion may become too high and silica may be dissolved. On the other hand, if at least one selected from potassium and ammonium ions is less than 100 ppm, the dispersion stability of the silica particles is lowered, and the silica particles are aggregated, thereby causing defects on the wafer. .

  In addition, the content of sodium and potassium contained in the silica particles described above is a value determined using ICP emission analysis (ICP-AES) or ICP mass spectrometry (ICP-MS). As the ICP emission analyzer, for example, “ICPE-9000 (manufactured by Shimadzu Corporation)” or the like can be used. As the ICP mass spectrometer, for example, “ICPM-8500 (manufactured by Shimadzu Corporation)”, “ELAN DRC PLUS (manufactured by Perkin Elmer)”, or the like can be used. Further, the content of ammonium ions contained in the silica particles described above is a value quantified using an ion chromatography method. As the ion chromatography method, for example, a non-suppressor ion chromatograph “HIS-NS (manufactured by Shimadzu Corporation)”, “ICS-1000 (manufactured by DIONEX)”, or the like can be used. The sodium and potassium contained in the silica particles may be sodium ion and potassium ion, respectively. By measuring the content of sodium ions, potassium ions, and ammonium ions, sodium, potassium, and ammonium ions contained in the silica particles can be quantified. In addition, content of the sodium, potassium, and ammonium ion described in this specification is the weight of sodium, potassium, and ammonium ions with respect to the weight of the silica particles.

  By containing sodium and at least one selected from potassium and ammonium ions within the above range, the silica particles can be stably dispersed in the chemical mechanical polishing aqueous dispersion. Aggregation of silica particles that cause defects does not occur. Moreover, if it is in the said range, the metal contamination of the wafer after grinding | polishing can be prevented.

  The average particle diameter calculated from the specific surface area measured using the BET method of silica particles is preferably 10 to 100 nm, more preferably 10 to 90 nm, and particularly preferably 10 to 80 nm. When the average particle diameter of the silica particles is within the above range, it is excellent in storage stability as a chemical mechanical polishing aqueous dispersion, and a smooth polished surface free from defects can be obtained. When the average particle size of the silica particles is less than the above range, the polishing rate for the interlayer insulating film (cap layer) such as the TEOS film becomes too small, which is not practical. On the other hand, when the average particle diameter of the silica particles exceeds the above range, the storage stability of the silica particles is inferior, which is not preferable.

  The average particle diameter of the silica particles is calculated from the specific surface area measured using the BET method with a flow type specific surface area automatic measuring device “micrometrics FlowSorb II 2300 (manufactured by Shimadzu Corporation)”, for example.

  Below, the method to calculate an average particle diameter from the specific surface area of a silica particle is demonstrated.

Assuming that the shape of the silica particle is a true sphere, the particle diameter is d (nm) and the specific gravity is ρ (g / cm ³ ), the surface area A of n particles is A = nπd ² . N particles mass N becomes N = ρnπd ^3/6. The specific surface area S is represented by the surface area of all the constituent particles per unit mass of the powder. Then, the specific surface area S of n particles is S = A / N = 6 / ρd. Substituting the specific gravity ρ = 2.2 of the silica particles into this equation and converting the unit, the following equation (2) can be derived.

Average particle diameter (nm) = 2727 / S (m ² / g) (2)

  In addition, all the average particle diameters of the silica particle in this specification are calculated based on (2) Formula.

  The ratio Rmax / Rmin of the major axis (Rmax) to the minor axis (Rmin) of the silica particles is preferably 1.0 to 1.5, more preferably 1.0 to 1.4, and particularly preferably 1.0 to 1. 3. When Rmax / Rmin is within the above range, a high polishing rate and high planarization characteristics can be exhibited without causing defects in the metal film or the insulating film. If Rmax / Rmin is greater than 1.5, defects after polishing occur, which is not preferable.

  Here, the major axis (Rmax) of the silica particles means the longest distance among the distances connecting the end portions of the images of one independent silica particle image taken by a transmission electron microscope. . The short diameter (Rmin) of the silica particles means the shortest distance among the distances connecting the end portions of the image of one independent silica particle image taken with a transmission electron microscope.

  For example, when the image of one independent silica particle 30a photographed by a transmission electron microscope as shown in FIG. 5 is elliptical, the major axis a of the elliptical shape is determined as the major axis (Rmax) of the silica particle, The elliptical minor axis b is determined as the minor axis (Rmin) of the silica particles. As shown in FIG. 6, when the image of one independent silica particle 30b photographed by a transmission electron microscope is an aggregate of two particles, the longest distance c connecting the end portions of the image is expressed as follows. The longest diameter (Rmax) of the silica particles is determined, and the shortest distance d connecting the end portions of the image is determined as the short diameter (Rmin) of the silica particles. As shown in FIG. 7, when an image of one independent silica particle 30c photographed by a transmission electron microscope is an aggregate of three or more particles, the longest distance e connecting the end portions of the image is shown. Is the long diameter (Rmax) of the silica particles, and the shortest distance f connecting the end portions of the image is determined to be the short diameter (Rmin) of the silica particles.

  For example, by measuring the major axis (Rmax) and minor axis (Rmin) of 50 silica particles by the above-described determination method, and calculating the average value of major axis (Rmax) and minor axis (Rmin), the major axis and The ratio to the minor axis (Rmax / Rmin) can be calculated and obtained.

  The content of the silica particles (A) is preferably 1 to 20% by mass, more preferably 1 to 15% by mass with respect to the total mass of the chemical mechanical polishing aqueous dispersion at the time of use. Preferably it is 1-10 mass%. When the content of silica particles is less than the above range, a sufficient polishing rate cannot be obtained, which is not practical. On the other hand, when the content of the silica particles exceeds the above range, the cost increases and a stable chemical mechanical polishing aqueous dispersion may not be obtained.

  The method for producing (A) silica particles used in the present embodiment is not particularly limited as long as silica particles in which the content of sodium, potassium and ammonium ions is within the above range are obtained, and a conventionally known method is applied. be able to. For example, it can be produced according to the method for producing a silica particle dispersion described in JP-A No. 2003-109921 and JP-A No. 2006-80406.

  Further, as a conventionally known method, there is a method of producing silica particles by removing alkali from an alkali silicate aqueous solution. Examples of the alkali silicate aqueous solution include a sodium silicate aqueous solution, an ammonium silicate aqueous solution, a lithium silicate aqueous solution, and a potassium silicate aqueous solution that are generally known as water glass. Examples of ammonium silicate include silicates made of ammonium hydroxide and tetramethylammonium hydroxide.

Below, one of the specific preparation methods of the (A) silica particle used for this embodiment is demonstrated. A dilute silicic acid solution containing 20 to 38% by mass of silica and diluting an aqueous sodium silicate solution having a SiO ₂ / Na ₂ O molar ratio of 2.0 to 3.8 with water to have a silica concentration of 2 to 5% by mass A sodium aqueous solution is used. Subsequently, a dilute sodium silicate aqueous solution is passed through the hydrogen-type cation exchange resin layer to generate an active silicate aqueous solution from which most of the sodium ions have been removed. The aqueous silicic acid solution is aged with heat while adjusting the pH to 7-9 with alkali, and grown to the desired particle size to produce colloidal silica particles. During this thermal aging, an active silicic acid aqueous solution and small particles of colloidal silica are added little by little to prepare silica particles having a target particle size in the range of, for example, an average particle size of 10 to 100 nm. The silica particle dispersion thus obtained is concentrated to increase the silica concentration to 20 to 30% by mass, and then passed again through the hydrogen-type cation exchange resin layer to remove most of the sodium ions and pH with an alkali. By adjusting the pH, silica particles containing 5 to 500 ppm of sodium and 100 to 20000 ppm of at least one selected from potassium and ammonium ions can be produced.

  In addition, (A) the content of sodium, potassium and ammonium ions contained in the silica particles is obtained by recovering the silica component by a known method such as centrifugation, ultrafiltration, etc., of the chemical mechanical aqueous dispersion containing the silica particles, It can be calculated by quantifying sodium, potassium and ammonium ions contained in the recovered silica component. Therefore, by analyzing the silica component recovered from the chemical mechanical polishing aqueous dispersion by the above method by a known method, it can be confirmed that the constituent requirements of the present invention are satisfied.

1.2 (B) Organic Acid The chemical mechanical polishing aqueous dispersion according to this embodiment contains (B) an organic acid. (B) By adding an organic acid, surface defects such as scratches on the copper film can be reduced.

  The organic acid (B) used in the present embodiment is preferably an organic acid having two or more carboxyl groups. By adding an organic acid having two or more carboxyl groups, not only the polishing rate for the copper film can be increased, but also the polishing rate for a barrier metal film such as tantalum can be increased.

  In addition, organic acids having two or more carboxyl groups have high coordination ability not only for wiring metals such as copper but also for metal species that generate stable multivalent ions used for barrier metal films. Therefore, it is possible to stabilize the polyvalent ions generated by the polishing of the wiring metal and the barrier metal film and suppress the precipitation of the metal salt. As a result, surface roughness of the surface to be polished can be suppressed and high flatness can be obtained, and polishing defects such as scratches can be suppressed. On the other hand, an organic acid having two or more carboxyl groups has an effect of chemically etching the surface to be polished, and exhibits its effect by suppressing the precipitation of the metal salt as described above. It becomes possible. Furthermore, by containing such an organic acid, it is possible to appropriately interact with the silanol group (A) of the silica particles, and to improve the dispersion stability of the silica particles in the polishing composition. it can.

  In addition, by containing an organic acid having two or more carboxyl groups, sodium ions, potassium ions, etc. that are crushed during the polishing and eluted from the silica particles can be efficiently captured, and the object to be polished It can be effectively removed from the surface. On the other hand, even if formic acid having one carboxyl group, acetic acid, propionic acid or the like is added, high coordination ability to such a polyvalent metal cannot be expected, and the polishing rate for the barrier metal film is increased. It is difficult.

  Furthermore, it is considered that the (B) organic acid used in the present embodiment can be combined with the (A) silica particles to be adsorbed on the surface of the silica particles, thereby improving the dispersion stability of the particles. As a result, the storage stability of the particles and the number of scratches estimated to be caused by the aggregated particles can be greatly suppressed.

  Examples of the (B) organic acid used in the present embodiment include tartaric acid, fumaric acid, phthalic acid, maleic acid, oxalic acid, citric acid, malic acid, malonic acid, glutaric acid, quinolinic acid, and the like. Moreover, amino acids, such as glutamic acid and aspartic acid which have two or more carboxyl groups, are mentioned.

  When the pKa value at which the first carboxyl group of an organic acid having two or more carboxyl groups is dissociated is pKa1, the pKa1 is preferably 4 or less. By adding an organic acid having a pKa1 of 4 or less, the storage stability of the silica particles can be enhanced. In addition, an organic acid having a pKa1 of 4 or less can efficiently capture sodium ions and potassium ions that are crushed during the polishing and eluted from the silica particles, so that the sodium ions and potassium ions are effective from the surface to be polished. Can be removed.

  From the above viewpoint, the organic acid (B) used in the present embodiment is preferably tartaric acid, fumaric acid, malonic acid, and maleic acid, and more preferably maleic acid. In addition, the effect of this invention will be acquired if at least 1 sort (s) of the organic acid which has the said 2 or more carboxyl group is contained. Therefore, in this invention, you may add organic acids other than the organic acid which has a 2 or more carboxyl group for the other objective.

  The content of the organic acid (B) is preferably 0.001 to 3.0% by mass, more preferably 0.01 to 2.0% by mass with respect to the total mass of the chemical mechanical polishing aqueous dispersion. is there. (B) If the content of the organic acid is less than the above range, surface defects such as generation of many scratches on the copper film may occur. On the other hand, when the content of (B) the organic acid exceeds the above range, (A) aggregation of silica particles may be caused and storage stability may be impaired. In addition, although the said (B) organic acid can be used individually by 1 type, you may use 2 or more types together.

1.3 (C) Nonionic surfactant The chemical mechanical polishing aqueous dispersion according to this embodiment contains (C) a nonionic surfactant. (C) The polishing rate for the interlayer insulating film can be controlled by adding a nonionic surfactant. That is, the polishing rate for the low dielectric constant insulating film can be suppressed, and the polishing rate for the cap layer such as the TEOS film can be increased.

  (C) Nonionic surfactants include acetylene glycol ethylene oxide adducts, acetylene alcohols and other nonionic surfactants having at least one acetylene group, silicone surfactants, alkyl ether surfactants, Examples include polyvinyl alcohol, cyclodextrin, polyvinyl methyl ether, and hydroxyethyl cellulose. The (C) nonionic surfactants exemplified above can be used alone or in combination of two or more.

  Among these, a nonionic surfactant having at least one acetylene group is preferable, and a nonionic surfactant represented by the following general formula (1) is more preferable.

（式中、ｍおよびｎはそれぞれ独立に１以上の整数であり、ｍ＋ｎ≦５０を満たす。）

(In the formula, m and n are each independently an integer of 1 or more and satisfy m + n ≦ 50.)

  In the general formula (1), the hydrophilic / lipophilic balance (HLB) can be adjusted by controlling m and n representing the number of moles of ethylene oxide added. In the general formula (1), m and n are preferably 20 ≦ m + n ≦ 50, and more preferably 20 ≦ m + n ≦ 40.

  Commercially available products of (C) nonionic surfactant represented by the general formula (1) include, for example, Surfinol 440 (HLB value = 8), Surfinol 465 (HLB value = 13), Surfinol 485 (HLB) Value = 17) (manufactured by Air Products Japan).

  The HLB value of the (C) nonionic surfactant used in the present embodiment is preferably 5 to 20, and more preferably 8 to 17. If the HLB value is less than 5, the solubility in water is too small, which may not be suitable for use.

  In general, when silica particles having a high content of sodium or potassium are used in the chemical mechanical polishing aqueous dispersion, sodium or potassium derived from the silica particles remains on the surface of the object to be polished even by a cleaning operation after polishing. It is thought to cause deterioration of the electrical characteristics of the device, and its use has been avoided. However, although depending on the HLB value of the nonionic surfactant, the (C) nonionic surfactant used in the present embodiment is formed on the surface of the low dielectric constant insulating film having relatively high hydrophobicity. It is estimated that there is a tendency to adsorb more easily than ionic surfactants and the like. As a result, adsorption of sodium ions and potassium ions that are crushed during polishing and eluted from the silica particles to the low dielectric constant insulating film can be suppressed, and sodium and potassium are easily removed from the surface of the object to be polished by washing. It becomes possible. Furthermore, since the adsorbed (C) nonionic surfactant has a small molecular polarity and can be easily removed by a cleaning operation, it does not remain on the surface of the object to be polished and does not deteriorate the electrical characteristics of the device.

  Since the (A) silica particles used in the present embodiment have a high affinity with the object to be polished, the low dielectric constant insulating film having a low mechanical strength may be excessively polished. On the other hand, since the (C) nonionic surfactant is easily adsorbed on the surface of the low dielectric constant insulating film as described above, the low dielectric constant insulating film can be effectively protected. Therefore, by using (A) silica particles and (C) a nonionic surfactant in combination, it is possible to achieve both good flatness and polishing rate while preventing excessive polishing of the low dielectric constant insulating film. Conceivable.

  (C) The content of the nonionic surfactant is preferably 0.001 to 1.0% by mass, more preferably 0.005 to 0.5%, based on the total mass of the chemical mechanical polishing aqueous dispersion. % By mass. (C) When content of nonionic surfactant exists in the said range, coexistence with a moderate polishing rate and a favorable to-be-polished surface can be achieved.

1.4 Other Additives 1.4.1 Oxidizing Agent The chemical mechanical polishing aqueous dispersion according to this embodiment may contain an oxidizing agent as necessary. Examples of the oxidizing agent include ammonium persulfate, potassium persulfate, hydrogen peroxide, ferric nitrate, diammonium cerium nitrate, iron sulfate, ozone, hypochlorous acid and its salts, potassium periodate, and peracetic acid. Can be mentioned. These oxidizing agents can be used alone or in combination of two or more. Of these oxidizing agents, ammonium persulfate, potassium persulfate, and hydrogen peroxide are particularly preferable from the viewpoints of oxidizing power, compatibility with the protective film, ease of handling, and the like. The content of the oxidizing agent is preferably 0.05 to 5% by mass, more preferably 0.08 to 3% by mass, based on the total mass of the chemical mechanical polishing aqueous dispersion. When the content of the oxidizing agent is less than the above range, a sufficient polishing rate may not be ensured. On the other hand, when the content exceeds the above range, dishing and corrosion of the copper film may be increased.

1.4.2 Water-soluble polymer The chemical mechanical polishing aqueous dispersion according to this embodiment may contain a water-soluble polymer, if necessary. By adding a water-soluble polymer, dishing and corrosion of the copper film can be effectively suppressed.

  The water-soluble polymer can be coordinated on the surface of the copper film and effectively protected. As a result, (A) silica particles can be prevented from excessively adsorbing on the surface of the copper film, and the polishing rate for the copper film can be controlled. Further, since the water-soluble polymer suppresses the adsorption of silica particles to the surface to be polished, it is possible to easily remove the silica particles from the surface to be polished by washing after the polishing is completed. Further, since the water-soluble polymer can be easily removed by a cleaning operation, it does not remain on the surface to be polished and deteriorate the electrical characteristics of the device.

  Examples of the water-soluble polymer include polyacrylic acid and its salt, polymethacrylic acid and its salt, polyvinyl alcohol, polyvinyl pyrrolidone, polyacrylamide and the like. Among these water-soluble polymers, polymethacrylic acid having a carboxyl group in a repeating unit and a salt thereof, polyacrylic acid and a salt thereof, or a derivative thereof is preferable. Polyacrylic acid and polymethacrylic acid are more preferred because they do not affect the stability of (A) silica particles. Polyacrylic acid is particularly preferable because it can impart an appropriate viscosity to the chemical mechanical polishing aqueous dispersion according to the present embodiment.

  As the weight average molecular weight of the water-soluble polymer, for example, a weight average molecular weight (Mw) in terms of polyethylene glycol measured by GPC (gel permeation chromatography) can be applied. The water-soluble polymer may have a weight average molecular weight (Mw) of 50,000 to 5,000,000, preferably 200,000 to 5,000,000, more preferably 200,000 to 1,500,000. When the weight average molecular weight is within the above range, polishing friction can be greatly reduced, so that the occurrence of dishing or corrosion of the copper film can be suppressed. When the weight average molecular weight is smaller than the lower limit, the effect of reducing polishing friction is small, and the effect of suppressing the dishing or corrosion of the copper film is poor. On the other hand, if the weight average molecular weight is larger than the above upper limit, the storage stability of the silica particles may be impaired, and the viscosity of the chemical mechanical polishing aqueous dispersion is excessively increased, which imposes a load on the polishing liquid supply apparatus. Such problems may occur.

  The content of the water-soluble polymer is preferably 0.001 to 1.0 mass%, more preferably 0.01 to 0.5 mass%, based on the total mass of the chemical mechanical polishing aqueous dispersion. It is. When the content of the water-soluble polymer is less than the above range, the effect of reducing polishing friction is small, and the effect of suppressing the dishing or corrosion of the copper film is inferior. On the other hand, when the content of the water-soluble polymer exceeds the above range, (A) silica particles may be aggregated.

  By appropriately adjusting the type, weight average molecular weight, and content of the water-soluble polymer, the polishing speed balance of the surface to be polished composed of various materials such as a copper film, a barrier metal film, and an insulating film is optimal. It is possible to improve the flatness by suppressing surface defects such as dishing and erosion.

1.4.3 Surfactant The chemical mechanical polishing aqueous dispersion according to this embodiment may contain a surfactant other than the (C) nonionic surfactant as necessary. Other surfactants include anionic surfactants or cationic surfactants. By adding an anionic surfactant or a cationic surfactant, the polishing rate for the copper film can be controlled.

  Examples of the anionic surfactant include carboxylate, sulfonate, sulfate ester salt, phosphate ester salt and the like. Examples of the carboxylate include fatty acid soap and alkyl ether carboxylate. Examples of the sulfonate include alkyl benzene sulfonate, alkyl naphthalene sulfonate, α-olefin sulfonate, and the like. Examples of sulfate salts include higher alcohol sulfate salts, alkyl ether sulfate salts, polyoxyethylene alkylphenyl ether sulfate salts, and the like. Examples of the phosphate ester salt include alkyl phosphate ester salts.

  Examples of the cationic surfactant include aliphatic amine salts and aliphatic ammonium salts. These surfactants can be used alone or in combination of two or more.

  The content of the surfactant is preferably 0.001 to 1.0% by mass, more preferably 0.005 to 0.5% by mass, based on the total mass of the chemical mechanical polishing aqueous dispersion. When the content of the surfactant is within the above range, it is possible to achieve both an appropriate polishing rate and a good surface to be polished.

1.4.4 Organic Acid Having Nitrogen-containing Heterocycle and Carboxyl Group The chemical mechanical polishing aqueous dispersion according to this embodiment can contain an organic acid having a nitrogen-containing heterocycle and a carboxyl group as optional components. . The organic acid having a nitrogen-containing heterocyclic ring and a carboxyl group has a property of easily forming a coordinate bond with a copper ion, and forms a coordinate bond on the surface of the copper film to be polished. Thus, the surface roughness of the copper film can be suppressed and high flatness can be maintained, the affinity with copper and copper ions can be increased, and the polishing rate for the copper film can be promoted. Examples of the organic acid having a nitrogen-containing heterocycle and a carboxyl group include organic acids containing a hetero 6-membered ring having at least one nitrogen atom, and organic acids containing a hetero compound consisting of a hetero 5-membered ring. More specifically, quinaldic acid, quinolinic acid, quinoline-8-carboxylic acid, picolinic acid, xanthurenic acid, quinurenic acid, nicotinic acid, indole carboxylic acid, anthranilic acid and the like can be mentioned.

  The content of the organic acid having a nitrogen-containing heterocyclic ring and a carboxyl group is preferably 0.001 to 3.0 mass%, more preferably 0.01 to the total mass of the chemical mechanical polishing aqueous dispersion. 2.0% by mass. If the content of the organic acid having a nitrogen-containing heterocyclic ring and a carboxyl group is less than the above range, dishing of the copper film may be caused. On the other hand, when the content of the organic acid having a nitrogen-containing heterocyclic ring and a carboxyl group exceeds the above range, the silica particles may aggregate.

1.5 pH
The pH of the chemical mechanical polishing aqueous dispersion according to this embodiment is preferably 6 to 12, more preferably 7 to 11.5, and particularly preferably 8 to 11. When the pH is less than 6, (A) the hydrogen bond between silanol groups present on the surface of the silica particles cannot be broken, and aggregation of the silica particles may be caused. On the other hand, if the pH is higher than 12, the basicity is too strong, which may cause wafer defects. As a means for adjusting the pH, for example, adjusting the pH by adding a pH adjuster represented by a basic salt such as potassium hydroxide, ammonia, ethylenediamine, TMAH (tetramethylammonium hydroxide), etc. Can do.

1.6 Method for Producing Chemical Mechanical Polishing Aqueous Dispersion The chemical mechanical polishing aqueous dispersion according to this embodiment comprises (A) silica particles, (B) an organic acid, and (C) a nonionic interface directly in pure water. It can be prepared by adding an activator and other additives and mixing and stirring. The chemical mechanical polishing aqueous dispersion thus obtained may be used as it is, but a chemical mechanical polishing aqueous dispersion containing each component in a high concentration (concentrated) is prepared and desired at the time of use. It may be used after diluting to a concentration of.

  It is also possible to prepare a plurality of liquids (for example, two or three liquids) containing any of the above-mentioned components and to use them by mixing them at the time of use. In this case, after preparing a chemical mechanical polishing aqueous dispersion by mixing a plurality of liquids, this may be supplied to the chemical mechanical polishing apparatus, or a plurality of liquids may be supplied individually to the chemical mechanical polishing apparatus. A chemical mechanical polishing aqueous dispersion may be formed on a surface plate.

  As a specific example, it comprises a liquid (I) which is an aqueous dispersion containing at least water and (A) silica particles, and a liquid (II) containing at least water, (B) an organic acid and (C) a nonionic surfactant. And a kit for preparing the chemical mechanical polishing aqueous dispersion by mixing these liquids.

  The concentration of each component in the liquids (I) and (II) is particularly as long as the concentration of each component in the chemical mechanical polishing aqueous dispersion finally prepared by mixing these liquids is within the above range. It is not limited. For example, liquids (I) and (II) containing each component at a concentration higher than the concentration of the chemical mechanical polishing aqueous dispersion are prepared, and the liquids (I) and (II) are diluted as necessary at the time of use. These are then mixed to prepare a chemical mechanical polishing aqueous dispersion in which the concentration of each component is in the previous range. Specifically, when the liquids (I) and (II) are mixed at a weight ratio of 1: 1, the liquids (I) and (I) having a concentration twice the concentration of the chemical mechanical polishing aqueous dispersion. II) may be prepared. Moreover, after preparing liquid (I) and (II) of the density | concentration of 2 times or more of the density | concentration of the chemical mechanical polishing aqueous dispersion, and mixing these by 1: 1 weight ratio, each component becomes the said range. You may dilute with water. As described above, the storage stability of the chemical mechanical polishing aqueous dispersion can be improved by separately preparing the liquid (I) and the liquid (II).

  When the kit is used, the method and timing of mixing the liquid (I) and the liquid (II) are not particularly limited as long as the chemical mechanical polishing aqueous dispersion is formed at the time of polishing. For example, after the liquid (I) and the liquid (II) are mixed to prepare the chemical mechanical polishing aqueous dispersion, this may be supplied to a chemical mechanical polishing apparatus, or the liquid (I) and the liquid ( II) may be supplied independently to a chemical mechanical polishing apparatus and mixed on a surface plate. Alternatively, the liquid (I) and the liquid (II) may be independently supplied to the chemical mechanical polishing apparatus and mixed in line in the apparatus, or a mixing tank is provided in the chemical mechanical polishing apparatus, You may mix. In line mixing, a line mixer or the like may be used to obtain a more uniform aqueous dispersion.

2. Chemical Mechanical Polishing Method A specific example of the chemical mechanical polishing method according to the present embodiment will be described in detail with reference to the drawings.

2.1 Object to be processed FIG. 8 shows an object to be processed 200 used in the chemical mechanical polishing method according to this embodiment.

(1) First, the low dielectric constant insulating film 40 is formed by a coating method or a plasma CVD method. Examples of the low dielectric constant insulating film 40 include inorganic insulating films and organic insulating films. Examples of the inorganic insulating film include a SiOF film (k = 3.5 to 3.7), a Si—H containing SiO ₂ film (k = 2.8 to 3.0), and the like. As the organic insulating film, a carbon-containing SiO ₂ film (k = 2.7 to 2.9), a methyl group-containing SiO ₂ film (k = 2.7 to 2.9), a polyimide film (k = 3.0). To 3.5), Parylene film (k = 2.7 to 3.0), Teflon (registered trademark) film (k = 2.0 to 2.4), amorphous carbon (k = <2.5) (Where k represents a dielectric constant).

  (2) An insulating film 50 is formed on the low dielectric constant insulating film 40 by using a CVD method or a thermal oxidation method. Examples of the insulating film 50 include a TEOS film.

  (3) The wiring recess 60 is formed by etching the low dielectric constant insulating film 40 and the insulating film 50 so as to communicate with each other.

  (4) A barrier metal film 70 is formed using the CVD method so as to cover the surface of the insulating film 50 and the bottom and inner wall surface of the wiring recess 60. The barrier metal film 70 is preferably Ta or TaN from the viewpoint of excellent adhesion to the copper film and diffusion barrier properties with respect to the copper film. However, the barrier metal film 70 is not limited to this and is Ti, TiN, Co, Mn, Ru, or the like. May be.

  (5) By depositing copper on the barrier metal film 70 to form the copper film 80, the object 200 is obtained.

2.2 Chemical Mechanical Polishing Method (1) First, in order to remove the copper film 80 deposited on the barrier metal film 70 of the object 200, the chemical mechanical polishing aqueous dispersion for the copper film is used. Perform mechanical polishing. As shown in FIG. 9, the chemical mechanical polishing is stopped when the barrier metal film 70 is exposed.

  (2) Next, using the chemical mechanical polishing aqueous dispersion according to this embodiment, the barrier metal film 70 and the copper film 80 are simultaneously subjected to chemical mechanical polishing. As shown in FIG. 10, even after the insulating film 50 is exposed, the chemical mechanical polishing is continued to remove the insulating film 50. As shown in FIG. 11, the semiconductor device 90 is obtained by stopping the chemical mechanical polishing when the low dielectric constant insulating film 40 is exposed. Since the chemical mechanical polishing aqueous dispersion according to this embodiment has a low polishing rate for the low dielectric constant insulating film, polishing can be easily stopped without excessively polishing the low dielectric constant insulating film.

  In the chemical mechanical polishing method according to the present embodiment, a commercially available chemical mechanical polishing apparatus can be used. As a commercially available chemical mechanical polishing apparatus, for example, model “EPO-112”, “EPO-222” manufactured by Ebara Manufacturing Co., Ltd .; model “LGP-510”, “LGP-552” manufactured by Lapmaster SFT, Applied Materials Manufactured, model “Mirra” and the like.

Preferred polishing conditions should be appropriately set depending on the chemical mechanical polishing apparatus to be used. For example, when “EPO-112” is used as the chemical mechanical polishing apparatus, the following conditions can be used.
-Surface plate rotation speed: preferably 30-120 rpm, more preferably 40-100 rpm
Head rotation speed: preferably 30 to 120 rpm, more preferably 40 to 100 rpm
-Platen rotation speed / head rotation speed ratio; preferably 0.5-2, more preferably 0.7-1.5
Polishing pressure; preferably 60 to 200 gf / cm ² , more preferably 100 to 150 gf / cm ²
-Chemical mechanical polishing aqueous dispersion supply rate; preferably 50 to 300 mL / min, more preferably 100 to 200 mL / min. Examples Hereinafter, the present invention will be described by way of examples. However, the present invention is not limited to these examples.

3.1 Preparation of Silica Particle Dispersion No. 3 water glass (silica concentration: 24% by mass) was diluted with water to obtain a diluted sodium silicate aqueous solution having a silica concentration of 3.0% by mass. This diluted sodium silicate aqueous solution was passed through a hydrogen-type cation exchange resin layer to obtain an active silicic acid aqueous solution of pH 3.1 from which most of the sodium ions were removed. Thereafter, 10% by weight aqueous potassium hydroxide solution was immediately added with stirring to adjust the pH to 7.2, followed by further heating and boiling for 3 hours. To the resulting aqueous solution, 10 times the amount of the active silicic acid aqueous solution whose pH was previously adjusted to 7.2 was added little by little over 6 hours to grow the average particle size of the silica particles to 26 nm.

  Next, the dispersion aqueous solution containing the silica particles is concentrated under reduced pressure (boiling point 78 ° C.), and the silica concentration is 32.0 mass%, the average particle diameter of silica is 26 nm, and the pH is 9.8. Got. This silica particle dispersion is again passed through the hydrogen-type cation exchange resin layer to remove most of sodium, and then 10% by mass of potassium hydroxide aqueous solution is added, and the silica particle concentration: 28.0% by mass, pH A silica particle dispersion A of 10.0 was obtained.

The obtained silica particle dispersion A was titrated with a 0.1N sodium hydroxide aqueous solution in a pH range of 4 to 9, and the silanol group density was calculated from the titration value and the value of the BET specific surface area. It was nm ^2.

  Silica particles are recovered from the resulting silica particle dispersion A by centrifugation, and the silica particles recovered with dilute hydrofluoric acid are dissolved, and ICP-MS (Perkin Elmer, model number “ELAN DRC PLUS”) is used. Used to measure sodium and potassium. Furthermore, ammonium ion was measured using ion chromatography (manufactured by DIONEX, model number “ICS-1000”). As a result, the sodium content was 88 ppm, the potassium content was 5500 ppm, and the ammonium ion content was 5 ppm.

  Silica particle dispersion A was diluted to 0.01% with ion-exchanged water, placed on a collodion membrane having Cu grit having a mesh size of 150 μm, and dried at room temperature. Thus, after preparing a sample for observation so as not to break the particle shape on the Cu grit, using a transmission electron microscope (H-7650, manufactured by Hitachi High-Technologies Corporation) Images were taken, the major axis and minor axis of 50 colloidal silica particles were measured, and the average value was calculated. When the ratio (Rmax / Rmin) was calculated from the average value of the major axis (Rmax) and the average value of the minor axis (Rmin), it was 1.1.

  The average particle size calculated from the specific surface area measured using the BET method was 26 nm. In addition, in the surface area measurement of the colloidal silica particle by BET method, the value which measured the silica particle collect | recovered by concentrating and drying the silica particle dispersion A was used.

  Silica particle dispersions B to D and F were obtained by the same method as described above while controlling the heat aging time, the type and amount of the basic compound, and the like.

The silica particle dispersion E was produced by the following method. First, 35 kg of high-purity colloidal silica (product number: PL-2; solid concentration 20 mass%, pH 7.4, secondary particle diameter 66 nm) manufactured by Fuso Chemical Industry Co., Ltd. and 140 kg of ion-exchanged water were charged into a 40 L autoclave. Hydrothermal treatment was performed for 3 hours at 0 ° C. under a pressure of 0.5 MPa. Next, the dispersion aqueous solution containing the silica particles is concentrated under reduced pressure at a boiling point of 78 ° C. to obtain a silica particle dispersion E having a silica concentration of 20% by mass, a secondary particle diameter of 62 nm, and a pH of 7.5. Obtained. The obtained silica particle dispersion E was titrated in a pH range of 4 to 9 using a 0.1N aqueous sodium hydroxide solution, and the silanol group density was calculated from the titration value and the BET specific surface area value. / Nm ² .

  Silica particle dispersion G was prepared by a known method using tetraethoxysilane as a raw material and using a sol-gel method.

  The silica particle dispersion H is obtained by obtaining a dispersion by a method similar to the method for preparing the silica particle dispersion A, followed by further hydrothermal treatment (in the preparation of the silica particle dispersion A, the autoclave treatment is further performed for a longer time. And silanol condensation was carried out).

  Silica particle dispersion I was prepared by the following method. First, high purity colloidal silica (product number: PL-2; solid content concentration 20 mass%, pH 7.4, secondary particle diameter 66 nm) manufactured by Fuso Chemical Industry Co., Ltd. and dispersed in 140 kg of ion-exchanged water, the silica concentration is A silica particle dispersion I having a solid content concentration of 20.0% by weight, a secondary particle diameter of 62 nm, and a pH of 7.5 was obtained.

  Table 1 summarizes the physical property values of the silica particle dispersions A to I produced.

3.2 Synthesis of water-soluble polymer 3.2.1 Preparation of aqueous polyvinylpyrrolidone solution In a flask, 60 g of N-vinyl-2-pyrrolidone, 240 g of water, 0.3 g of a 10% by mass sodium sulfite aqueous solution and 10% by mass of t -Polyvinylpyrrolidone (K30) was produced | generated by adding 0.3 g of butyl hydroperoxide aqueous solution, and stirring for 5 hours under 60 degreeC nitrogen atmosphere. The obtained polyvinylpyrrolidone (K30) was measured by gel permeation chromatography (manufactured by Tosoh Corporation, apparatus model number “HLC-8120”, column model number “TSK-GEL α-M”, eluent is NaCl aqueous solution / acetonitrile). As a result, the weight average molecular weight (Mw) in terms of polyethylene glycol was 40,000. Further, the amount of amino group calculated from the charged amount of monomer was 0 mol / g, and the amount of cationic functional group was 0 mol / g.

3.2.2 Polyacrylic acid In a 2 liter container charged with 1000 g of ion-exchange water and 1 g of 5% by mass ammonium persulfate aqueous solution, 500 g of 20% by mass acrylic acid aqueous solution was stirred at 70 ° C. under reflux. It was dripped evenly over time. After completion of the dropwise addition, the solution was further kept under reflux for 2 hours to obtain an aqueous solution containing polyacrylic acid. As a result of measuring the obtained polyacrylic acid by gel permeation chromatography (manufactured by Tosoh Corporation, apparatus model number "HLC-8120", column model number "TSK-GEL α-M", eluent is NaCl aqueous solution / acetonitrile), The weight average molecular weight (Mw) in terms of polyethylene glycol was 1,000,000.

  Moreover, the polyacrylic acid with a weight average molecular weight (Mw) of 200,000 was obtained by adjusting the addition amount of the said component, reaction temperature, and reaction time suitably.

3.3 Preparation of Chemical Mechanical Polishing Aqueous Dispersion Silica Particle Dispersion A containing 50 parts by mass of ion-exchanged water and 5 parts by mass in terms of silica is placed in a polyethylene bottle, and 1 mass of malonic acid is added thereto. Part, 0.2 part by mass of quinaldic acid, 0.1 part by mass of acetylenic diol type nonionic surfactant (trade name “Surfinol 465”, manufactured by Air Products Japan), polyacrylic acid aqueous solution (weight average molecular weight 20) In addition, an amount corresponding to 0.05 parts by mass in terms of polymer is added, and a 10% by mass aqueous potassium hydroxide solution is added to adjust the pH of the chemical mechanical polishing aqueous dispersion to 10.0. did. Next, 30% by mass of hydrogen peroxide solution was added in an amount corresponding to 0.05 part by mass in terms of hydrogen peroxide, and stirred for 15 minutes. Finally, ion-exchanged water is added so that the total amount of all components is 100 parts by mass, and then filtered through a filter with a pore size of 5 μm to obtain a chemical mechanical polishing aqueous dispersion S1 having a pH of 10.0. It was.

Silica particles are recovered from the chemical mechanical polishing aqueous dispersion S1 by centrifugation, and pure water is added and dispersed so that the silica particle concentration is 28.0% by mass, and a 0.1N aqueous sodium hydroxide solution is used. When titration was performed in the range of pH 4 to 9, and the silanol group density was calculated from the titration value and the value of the BET specific surface area, it was 2.0 / nm ² . From this result, it was found that even when silica particles were recovered from the chemical mechanical polishing aqueous dispersion, the silanol group density in the silica particles could be quantified, and the same results as the silica particle dispersion could be obtained.

  Silica particles are recovered from the chemical mechanical polishing aqueous dispersion S1 by centrifugation, and the silica particles recovered with dilute hydrofluoric acid are dissolved. Then, ICP-MS (manufactured by PerkinElmer, model number “ELAN DRC PLUS”) is used. Used to measure sodium and potassium. Furthermore, ammonium was measured using ion chromatography (manufactured by DIONEX, model number “ICS-1000”). As a result, the sodium content was 88 ppm, the potassium content was 5500 ppm, and the ammonium ion content was 5 ppm. From this result, even when silica particles are recovered from the chemical mechanical polishing aqueous dispersion, sodium, potassium, and ammonium ions contained in the silica particles can be quantified, and the same results as in the silica particle dispersion A are obtained. I found out that

  The chemical mechanical polishing aqueous dispersions S2 to S13 have the silica particle dispersion, the organic acid, the surfactant, the water-soluble polymer, and the type and content of the oxidizing agent changed as shown in Table 2 to Table 3. Except for the above, it was produced in the same manner as the chemical mechanical polishing aqueous dispersion S1.

  In Tables 2 to 3, “Surfinol 465” and “Surfinol 485” (above, manufactured by Air Products Japan) are both 2,4,7,9-tetramethyl-5-decyne-4,7- Diol-dipolyoxyethylene ether, but the number of moles of polyoxyethylene added is different. “Surfinol 465” has an HLB value of 13, and “Surfinol 485” has an HLB value of 17. “Emulgen 120” (manufactured by Kao Corporation) is polyoxyethylene lauryl ether, and its HLB value is 15.3.

  The obtained chemical mechanical polishing aqueous dispersions S1 to S13 were put in a 100 cc glass tube and stored at 25 ° C. for 6 months, and the presence or absence of sedimentation was confirmed visually. The results are shown in Tables 2 to 3. In Tables 2 to 3, when the particle sedimentation and the difference in density are not recognized, “◯”, when only the density difference is recognized as “Δ”, when both the particle sedimentation and the density difference are recognized. Evaluated as “x”.

3.4 Chemical Mechanical Polishing Test 3.4.1 Polishing Evaluation of Unpatterned Substrate Chemical Mechanical Polishing Equipment (Ebara Seisakusho, Model “EPO112”) and Porous Polyurethane Polishing Pad (Nitta Haas, Part Number “IC1000”) )) And supplying any one of chemical mechanical polishing aqueous dispersions S1 to S13, the following various polishing rate measuring substrates are subjected to a polishing treatment under the following polishing conditions for 1 minute. The polishing rate and wafer contamination were evaluated by the above method. The results are also shown in Tables 2 to 3.

3.4.1a Polishing rate measurement (1) Polishing rate measuring substrate-A silicon substrate with an 8-inch thermal oxide film on which a copper film having a thickness of 15,000 angstroms is laminated.
A silicon substrate with an 8-inch thermal oxide film on which a tantalum film having a thickness of 2,000 angstroms is laminated.
An 8-inch silicon substrate on which a low dielectric constant insulating film (made by Applied Materials, trade name “Black Diamond”) having a thickness of 10,000 Å is laminated.
An 8-inch silicon substrate on which a 10,000 Å thick PETEOS film is laminated.

(2) Polishing conditions and head rotation speed: 70 rpm
Head load: 200 gf / cm ²
・ Table rotation speed: 70rpm
-Supply speed of chemical mechanical polishing aqueous dispersion: 200 mL / min In this case, the supply speed of chemical mechanical polishing aqueous dispersion refers to a value obtained by assigning the total supply amount of all supply liquids per unit time.

(3) Polishing rate calculation method For the copper film and the tantalum film, the film thickness after the polishing treatment is measured using an electric conduction film thickness measuring instrument (manufactured by KLA Tencor, model “Omnimap RS75”), The polishing rate was calculated from the film thickness reduced by chemical mechanical polishing and the polishing time.

  For PETEOS film and low dielectric constant insulating film, the film thickness after polishing is measured using an optical interference film thickness measuring instrument (Nanometrics Japan, model “Nanospec6100”) and reduced by chemical mechanical polishing. The polishing rate was calculated from the obtained film thickness and polishing time.

3.4.1b Wafer Contamination The PETEOS film and the low dielectric constant insulating film were polished in the same manner as in “3.4.1a Measurement of polishing rate”. For the PETEOS film, the substrate was subjected to vapor phase decomposition treatment, diluted hydrofluoric acid was dropped on the surface to dissolve the surface oxide film, and the dissolved liquid was then added to ICP-MS (manufactured by Perkin Elmer, model number “ELAN DRC”). PLUS "). For the low dielectric constant insulating film, ultrapure water is dropped on the surface of the substrate to extract the residual metal on the surface of the low dielectric constant insulating film, and then the extracted solution is ICP-MS (manufactured by Yokogawa Analytical Systems, model number “Agilent 7500s”). )). Wafer contamination, is preferably 3.0atom / cm ² or less, and more preferably 2.5atom / cm ² or less.

3.4.2 Polishing Evaluation of Patterned Wafer A chemical polishing machine (Ebara Seisakusho, model “EPO112”) is equipped with a porous polyurethane polishing pad (Nitta Haas, product number “IC1000”). While supplying any one of the mechanical polishing aqueous dispersions S1 to S13, the following patterned wafer was polished under the following polishing conditions, and the flatness and the presence or absence of defects were evaluated by the following methods. . The results are also shown in Tables 2 to 3.

(1) Patterned wafer A silicon nitride film having a thickness of 1,000 angstroms was deposited on a silicon substrate, and a low dielectric constant insulating film (black diamond film) was sequentially laminated on the film to 4,500 angstroms, and further a PETEOS film having a thickness of 500 angstroms. Thereafter, a “SEMATECH 854” mask pattern was processed, and a test substrate in which a 250 angstrom tantalum film, a 1,000 angstrom copper seed film and a 10,000 angstrom copper plating film were sequentially laminated thereon was used.

(2) Polishing conditions for the first polishing treatment step / Chemical mechanical polishing aqueous dispersion for the first polishing treatment step includes “CMS7401”, “CMS7452” (both manufactured by JSR Corporation), ion exchange A mixture of water and a 4% by mass aqueous ammonium persulfate solution at a mass ratio of 1: 1: 2: 4 was used.
-Head rotation speed: 70 rpm
Head load: 200 gf / cm ²
・ Table rotation speed: 70rpm
-Supply speed of chemical mechanical polishing aqueous dispersion: 200 mL / min In this case, the supply speed of chemical mechanical polishing aqueous dispersion refers to a value obtained by assigning the total supply amount of all supply liquids per unit time.
・ Polishing time: 2.75 minutes

(3) Polishing conditions of the second polishing treatment step / As the aqueous dispersion for the second polishing treatment step, chemical mechanical polishing aqueous dispersions S1 to S13 were used.
-Head rotation speed: 70 rpm
Head load: 200 gf / cm ²
・ Table rotation speed: 70rpm
-Supply speed of chemical mechanical polishing aqueous dispersion: 200 mL / min In this case, the supply speed of chemical mechanical polishing aqueous dispersion refers to a value obtained by assigning the total supply amount of all supply liquids per unit time.
Polishing time: The time at which polishing was further performed for 30 seconds from the time when the PETEOS film was removed from the surface to be polished was defined as the polishing end point, and is described as “patterned wafer polishing time” in Tables 2 to 3.

3.4.2a Evaluation of flatness For the surface to be polished of the patterned wafer after the second polishing process, a copper wiring width (line, L) is used using a high resolution profiler (KLA Tencor, model “HRP240ETCH”). ) / Insulating film width (space, S) was measured for dishing amount (nm) in copper wiring portions of 100 μm / 100 μm, respectively. The results are also shown in Tables 2 to 3. It should be noted that the dishing amount is displayed as negative when the upper surface of the copper wiring is convex above the reference surface (upper surface of the insulating film). The dishing amount is preferably -5 to 30 nm, more preferably -2 to 20 nm.

  The portion where the fine wiring length in the pattern in which the copper wiring width (line, L) / insulating film width (space, S) is 9 μm / 1 μm, respectively, is 1000 μm on the surface to be polished of the patterned wafer after the second polishing process. The amount of erosion (nm) was measured. The results are also shown in Tables 2 to 3. The amount of erosion was expressed as negative when the upper surface of the insulating layer of the fine wiring portion was convex above the field surface (the upper surface of the wide insulating layer that is not the wiring portion). The erosion amount is preferably -5 to 30 nm, more preferably -2 to 20 nm.

3.4.2b Defect evaluation For the surface to be polished of the patterned wafer after the second polishing process step, use a stylus-type step gauge (model “HRP240”, manufactured by KLA Tencor) for the fan of the 100 μm wiring pattern portion. And evaluated. Note that the evaluation of “fang” was performed on the gap of the insulating film or barrier metal film formed at the interface between the insulating film or barrier metal film of the wafer and the wiring portion. The smaller the fang, the better the planarization performance of the wiring part. The fang is preferably 0 to 30 nm, and more preferably 0 to 25 nm.

  Further, the number of polishing scratches (scratches) was measured on the surface to be polished of the patterned wafer after the second polishing process using a defect inspection apparatus (model “2351” manufactured by KLA Tencor). In Tables 2 to 3, the number of scratches per wafer is described with the unit “piece / wafer”. The number of scratches is preferably 100 / wafer or less.

3.4.3 Evaluation Results In Examples 1 to 5, in the polishing test of the polishing rate measuring substrate, the polishing rate for the PETEOS film is sufficiently high as 550 Å / min or more, and the polishing rate for the low dielectric constant insulating film is 130 Å. / Min or less. Further, in the polishing test of the patterned wafer, the flatness of the surface to be polished was excellent, and the number of scratches was suppressed to 100 or less.

  On the other hand, since S6 used in Comparative Example 1 uses an anionic surfactant (potassium dodecylbenzenesulfonate), in a polishing test of a polishing rate measuring substrate, a low dielectric constant insulating film (BD The polishing rate for the film) could not be reduced. On the other hand, in the polishing test of the patterned wafer, 105 scratches / wafer were generated on the copper film, and the surface to be polished was not good.

  S7 used in Comparative Example 2 corresponds to a composition in which the component corresponding to “organic acid” is deleted from S4 used in Example 4. When the results of Example 4 and Comparative Example 2 were compared, the storage stability of the silica particles was good. However, in the polishing test of the polishing rate measuring substrate, the polishing rate for the tantalum film in Comparative Example 2 was significantly lower than that in Example 4 (900 → 200 Å / min). Further, in the polishing test of the patterned wafer, the number of scratches on the copper film was significantly increased in Comparative Example 2 than in Example 4 (45 → 120 / wafer). From this result, the advantageous effect of using an organic acid was shown.

  S8 used in Comparative Example 3 corresponds to a composition obtained by deleting the component corresponding to “surfactant” from S3 used in Example 3. When the results of Example 3 and Comparative Example 3 were compared, the storage stability of the silica particles was good. However, in the polishing test of the polishing rate measuring substrate, the polishing rate for the low dielectric constant insulating film was significantly higher in Comparative Example 3 than in Example 3 (110 → 800 Å / min). From this result, the advantageous effect of using a nonionic surfactant was shown.

  S9 used in Comparative Example 4 corresponds to a composition using an anionic surfactant (potassium dodecylbenzenesulfonate) instead of “Surfinol 465” of S3 used in Example 3. When the results of Example 3 and Comparative Example 4 were compared, the storage stability of the silica particles was good. However, in the polishing test of the polishing rate measuring substrate, the polishing rate for the low dielectric constant insulating film was significantly higher in Comparative Example 4 than in Example 3 (110 → 650 Å / min). From this result, the advantageous effect of using a nonionic surfactant as a surfactant was shown.

  S10 used in Comparative Example 5 corresponds to a composition in which components corresponding to “silica particles” are deleted from S2 used in Example 2. In the polishing test of the substrate for measuring the polishing rate, the polishing rate was too low for any film, so it was not practical.

Since S11 used in Comparative Example 6 uses a silica particle dispersion G having a silanol density exceeding 3.0 particles / nm ² , the storage stability was poor. As a result, in the polishing test of the patterned wafer, a tendency to increase fang was recognized, a large number of scratches were generated, and a good polished surface could not be obtained.

Since S12 used in Comparative Example 7 uses the silica particle dispersion H having a silanol density of less than 1.0 particles / nm ² , the storage stability was poor. As a result, in the polishing test of the patterned wafer, a large number of scratches occurred and a good polished surface could not be obtained.

S13 used in Comparative Example 8 uses Silica Particle Dispersion I having a silanol density of more than 3.0 particles / nm ² , but has good storage stability by balancing the types and concentrations of additives. Was able to keep. However, in the polishing test of the patterned wafer, generation of fangs could not be suppressed, and a good polished surface could not be obtained.

  From the above results, the chemical mechanical polishing aqueous dispersions of Examples 1 to 5 reduce the polishing rate for the low dielectric constant insulating film and increase the polishing rate and the high polishing rate for the interlayer insulating film (cap layer) such as the TEOS film. It has been found that it is possible to achieve both flattening characteristics and to suppress the occurrence of surface defects such as dishing, erosion, scratch or fang.

DESCRIPTION OF SYMBOLS 10 ... Base | substrate, 12 ... Insulating film, 14 ... Barrier metal film, 16 ... Copper film, 20 ... Recess for wiring, 22 ... Area containing fine wiring, 24 ... Area not containing fine wiring, 26 ... Fine scratch, 28 ... Fang, 30a, 30b, 30c ... silica particles, 40 ... low dielectric constant insulating film, 50 ... insulating film (cap layer), 60 ... recess for wiring, 70 ... barrier metal film, 80 ... copper film, 90 ... semiconductor device , 100, 200 ... object to be processed

Claims (12)

(A) silica particles;
(B) an organic acid;
(C) a nonionic surfactant;
An aqueous dispersion for chemical mechanical polishing containing
The (A) silica particle is a chemical mechanical polishing aqueous dispersion having the following chemical properties.
The silanol group density calculated from the specific surface area measured using the BET method and the amount of silanol groups measured by titration is 1.0 to 3.0 / nm ² . In claim 1,
The (C) nonionic surfactant is an aqueous dispersion for chemical mechanical polishing having at least one acetylene group. In claim 1 or 2,
The (C) nonionic surfactant is an aqueous dispersion for chemical mechanical polishing, which is a compound represented by the following general formula (1).

(In the formula, m and n are each independently an integer of 1 or more and satisfy m + n ≦ 50.) In any one of Claims 1 thru | or 3,
The (B) organic acid is an aqueous dispersion for chemical mechanical polishing, which is an organic acid having two or more carboxyl groups. In claim 4,
The chemical mechanical polishing aqueous dispersion, wherein the organic acid having two or more carboxyl groups is at least one selected from tartaric acid, fumaric acid, malonic acid, and maleic acid. In any one of Claims 1 thru | or 5,
Further, the (A) silica particles are chemical mechanical polishing aqueous dispersions having the following chemical properties.
Sodium, potassium and ammonium ion content measured from elemental analysis by ICP emission spectrometry or ICP mass spectrometry and quantitative analysis of ammonium ion by ion chromatography, sodium content: 5 to 500 ppm, potassium and ammonium ion The content of at least one selected from: satisfies the relationship of 100 to 20000 ppm. In any one of Claims 1 thru | or 6,
The ratio (Rmax / Rmin) of the major axis (Rmax) to the minor axis (Rmin) of the (A) silica particles is 1.0 to 1.5, and is an aqueous dispersion for chemical mechanical polishing. In any one of Claims 1 thru | or 7,
(A) The aqueous dispersion for chemical mechanical polishing whose average particle diameter computed from the specific surface area measured using the BET method of the said silica particle is 10-100 nm. In any one of claims 1 to 8,
Further, an aqueous dispersion for chemical mechanical polishing containing a water-soluble polymer. In any one of claims 1 to 9,
An aqueous dispersion for chemical mechanical polishing having a pH of 6-12.   A surface to be polished of a semiconductor device having at least one selected from a metal film, a barrier metal film, and an insulating film is polished using the chemical mechanical polishing aqueous dispersion according to claim 1. A chemical mechanical polishing method. A method for producing an aqueous dispersion for chemical mechanical polishing by mixing at least (A) silica particles, (B) an organic acid, and (C) a nonionic surfactant,
Said (A) silica particle is a manufacturing method of the aqueous dispersion for chemical mechanical polishing which has the following chemical property.
The silanol group density calculated from the specific surface area measured using the BET method and the amount of silanol groups measured by titration is 1.0 to 3.0 / nm ² .

Images