JP2010028077A - Aqueous dispersing element for chemical mechanical polishing and manufacturing method thereof, and chemical mechanical polishing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an aqueous dispersing element for chemical mechanical polishing that has high polishing speed and high polishing selectivity to a copper film and reduces surface defects on a surface to be polished, and to provide a chemical mechanical polishing method using the aqueous dispersing element for chemical mechanical polishing. <P>SOLUTION: The aqueous dispersing element for chemical mechanical polishing polishes a copper film containing a silica particle (A) and an amino acid (B), where the silica particle (A) has chemical properties of silanol group density calculated from a specific surface area measured by a BET method and a silanol group amount measured by titration being equal to 1.0-3.0/nm<SP>2</SP>. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

The present invention relates to an aqueous dispersion for chemical mechanical polishing, a method for producing the same, and a chemical mechanical polishing method.

  In recent years, the use of a low dielectric constant interlayer insulating film (hereinafter also referred to as “low dielectric constant insulating film”) has been studied in order to prevent an increase in signal delay due to the multilayer wiring of a semiconductor device. As such a low dielectric constant insulating film, for example, materials described in Patent Document 1 and Patent Document 2 have been studied. When the low dielectric constant insulating film as described above is used as the interlayer insulating film, high electrical conductivity is required for the wiring material, and thus copper or copper alloy is generally used. When manufacturing such a semiconductor device by the damascene method, the wiring material on the barrier metal film is usually removed by chemical mechanical polishing (first polishing process), and then the barrier metal film is removed by polishing, as necessary. Therefore, it is necessary to perform a step (second polishing step) of further polishing and planarizing the wiring material and the interlayer insulating film.

  In the first polishing step, it is required to selectively polish only the wiring material at a high speed. However, at the end of the first polishing process (when another material film such as a barrier metal film is exposed), it is very difficult to suppress dishing and erosion of the wiring portion while maintaining a high polishing rate for the wiring material. It is difficult to. For example, if only the polishing rate is increased, it may be achieved by increasing the applied pressure during polishing and increasing the frictional force applied to the wafer, but dishing and erosion of the wiring part is also accompanied by an increase in the polishing rate. The approach from the polishing method was limited because it deteriorated. Furthermore, in order to obtain a good polished surface in the second polishing step, it is necessary to suppress the copper residue (copper residue) on the fine wiring pattern at the end of the first polishing step.

  As described above, in addition to high-speed polishing performance and high planarization characteristics, removing the copper residue as it is at the end of the first polishing step or through a simple cleaning step can be achieved with the present polishing method. In order to compensate for this, it is required to develop a new aqueous dispersion for chemical mechanical polishing that can satisfy the above-mentioned characteristics.

  By the way, in general, the composition of the chemical mechanical polishing aqueous dispersion is composed of abrasive grains and additive components. In recent years, the development of aqueous dispersions for chemical mechanical polishing has centered on studies focusing on the combination of additive components, but on the other hand, studies have been made to improve polishing characteristics by controlling the properties of abrasive grains. (For example, see Patent Document 3).

  However, for example, when the abrasive grains described in Patent Document 3 are used, it is difficult to suppress dishing and erosion, and the stability of the particle dispersion is lacking.

JP 2001-308089 A JP 2001-298023 A JP 2006-26885 A

  Provided are a chemical mechanical polishing aqueous dispersion which has a high polishing rate and a high polishing selectivity for a copper film, and which can reduce surface defects on a surface to be polished, and a chemical mechanical polishing method using the same.

The chemical mechanical polishing aqueous dispersion according to the present invention comprises:
(A) silica particles;
(B) an amino acid;
An aqueous dispersion for chemical mechanical polishing for polishing a copper film containing silane, wherein the (A) silica particles have the following chemical properties.

The silanol group density calculated from the specific surface area measured using the BET method and the amount of silanol groups measured by titration is 1.0 to 3.0 / nm ² .

  In the chemical mechanical polishing aqueous dispersion according to the present invention, the (B) amino acid may be at least one selected from glycine, alanine, and histidine.

  The chemical mechanical polishing aqueous dispersion according to the invention may further contain (C) an organic acid having a nitrogen-containing heterocyclic ring and a carboxyl group.

  In the chemical mechanical polishing aqueous dispersion according to the invention, the (C) organic acid having a nitrogen-containing heterocyclic ring and a carboxyl group may be quinaldic acid or quinolinic acid.

  In the chemical mechanical polishing aqueous dispersion according to the invention, the silica particles (A) may have the following chemical properties.

  Sodium, potassium and ammonium ion content measured from elemental analysis by ICP emission spectrometry or ICP mass spectrometry and quantitative analysis of ammonium ion by ion chromatography, sodium content: 5 to 500 ppm, potassium and ammonium ion The content of at least one selected from: satisfies the relationship of 100 to 20000 ppm.

  In the chemical mechanical polishing aqueous dispersion according to the invention, the ratio (Rmax / Rmin) of the major axis (Rmax) to the minor axis (Rmin) of the (A) silica particles is 1.0 to 1.5. Can do.

  In the chemical mechanical polishing aqueous dispersion according to the present invention, the average particle diameter calculated from the specific surface area of the (A) silica particles measured using the BET method may be 10 nm to 100 nm.

  In the chemical mechanical polishing aqueous dispersion according to the present invention, the pH may be 6-12.

  The chemical mechanical polishing method according to the present invention is a method for chemically mechanically polishing an object having a copper film formed on a barrier metal film, wherein the copper film is formed using the chemical mechanical polishing aqueous dispersion. Is subjected to chemical mechanical polishing, and the chemical mechanical polishing is stopped when the barrier metal film is exposed.

  The method for producing a chemical mechanical polishing aqueous dispersion according to the present invention is a method for producing a chemical mechanical polishing aqueous dispersion by adding (A) silica particles and (B) an amino acid, The (A) silica particles have the following chemical properties.

The silanol group density calculated from the specific surface area measured using the BET method and the amount of silanol groups measured by titration is 1.0 to 3.0 / nm ² .

  According to the chemical mechanical polishing aqueous dispersion, the chemical mechanical polishing step has a high polishing rate and a high polishing selectivity for the copper film, and reduces surface defects such as dishing, erosion or corrosion on the polished surface. be able to.

It is the conceptual diagram which showed the major axis and minor axis of the silica particle typically. It is the conceptual diagram which showed the major axis and minor axis of the silica particle typically. It is the conceptual diagram which showed the major axis and minor axis of the silica particle typically. It is sectional drawing which showed the to-be-processed object used for the chemical mechanical polishing method of this invention. It is sectional drawing for demonstrating the grinding | polishing process of the chemical mechanical grinding | polishing method of this invention.

  Hereinafter, preferred embodiments of the present invention will be described in detail.

1. Chemical mechanical polishing aqueous dispersion The chemical mechanical polishing aqueous dispersion according to the present embodiment is a chemical mechanical polishing aqueous dispersion for polishing a copper film containing (A) silica particles and (B) amino acids. The (A) silica particles are “a silanol group density calculated from the specific surface area measured using the BET method and the amount of silanol groups measured by titration is 1.0 to 3.0. / Nm ² ”. First, each component constituting the chemical mechanical polishing aqueous dispersion according to this embodiment will be described.

1.1 (A) Silica Particle The “silanol group” of the silica particle in the present embodiment refers to a hydroxyl group directly bonded to a silicon atom on the surface of the silica particle, and the configuration or configuration is not particularly limited. Moreover, the production | generation conditions of a silanol group etc. are not ask | required.

The “silanol group density” in the present embodiment is the number of silanol groups per unit area on the surface of the silica particles, and serves as an index representing the electrical characteristics or chemical characteristics of the surface of the silica particles. In the chemical mechanical polishing aqueous dispersion, the silanol group is normally negatively charged because H ⁺ of SiOH is removed and is stably present in the SiO ⁻ state. Thereby, the electrical characteristics or chemical characteristics of the silica particles are developed. The unit of silanol group density is expressed in units / nm ² .

  The silanol group density of (A) silica particles used in the present embodiment is calculated from the surface area of silica particles measured using the BET method and the amount of silanol groups measured by titration. The silanol group amount of the silica particles can be determined by a generally known potentiometric titration, an aqueous dispersion of silica particles as described in the 2005 Precision Engineering Society Spring Conference Academic Lecture Proceedings p847-848, or It can be measured by titrating a chemical mechanical polishing aqueous dispersion in which silica particles are dispersed with a known base such as sodium hydroxide.

The silica particles (A) used in this embodiment have a silanol group density of 1.0 to 3.0 / nm ² , more preferably 1.1 to 2.8 / nm ² , and particularly preferably. Is 1.2 to 2.6 pieces / nm ² . When the silanol group density is within the above range, the additive or component such as organic acid or water-soluble polymer contained in the chemical mechanical polishing aqueous dispersion is attracted or rejected due to the electrical or chemical characteristics of the silica particle surface. To do. As a result, the additive component in the chemical mechanical polishing aqueous dispersion produces a minute concentration gradient around the silica particles, forming an optimal chemical mechanical polishing aqueous dispersion to achieve good polishing characteristics. Can be considered.

In addition, when the silanol group density is within the above range, the chemical mechanical polishing aqueous dispersion is moderately stabilized by the interaction between the silica particles and other additives in the chemical mechanical polishing aqueous dispersion. It becomes possible to disperse stably in the interior, and no agglomeration that causes defects occurs during polishing. If the silanol group density exceeds 3.0 / nm ² , such a balanced dispersion state cannot be obtained, which is not preferable because an insufficient polishing rate ratio and insufficient planarization characteristics are obtained. On the other hand, when the silanol group density is less than 1.0 / nm ² , the dispersion stability of the silica particles in the chemical mechanical polishing aqueous dispersion is inferior, the silica particles are aggregated, and the storage stability is deteriorated. It is not preferable.

  The silica particles (A) used in the present embodiment can preferably contain sodium in an amount of 5 to 500 ppm, more preferably 10 to 400 ppm, and particularly preferably 15 to 300 ppm. Furthermore, 100-20000 ppm can be contained at least one selected from potassium and ammonium ions. When said (A) silica particle contains potassium, content of potassium becomes like this. Preferably it is 100-20000 ppm, More preferably, it is 500-15000 ppm, Most preferably, it is 1000-10000 ppm. When said (A) silica particle contains ammonium ion, content of ammonium ion becomes like this. Preferably it is 100-20000 ppm, More preferably, it is 200-10000 ppm, Most preferably, it is 500-8000 ppm. Further, even when potassium or ammonium ions contained in the silica particles (A) are not within the above range, the total content of potassium and ammonium ions is preferably 100 to 20000 ppm, more preferably 500 to 15000 ppm, particularly preferably. Should just exist in the range of 1000-10000 ppm.

  If the sodium content exceeds 500 ppm, wafer contamination after polishing occurs, which is not preferable. On the other hand, in order to make sodium less than 5 ppm, it is necessary to perform the ion exchange treatment a plurality of times, which involves technical difficulties.

  If at least one selected from potassium and ammonium ions exceeds 20000 ppm, the pH of the silica particle dispersion may become too high and silica may be dissolved. On the other hand, if at least one selected from potassium and ammonium ions is less than 100 ppm, the dispersion stability of the silica particles is lowered, and the silica particles are aggregated, thereby causing defects on the wafer. .

  In addition, the content of sodium and potassium contained in the silica particles described above is a value determined using ICP emission analysis (ICP-AES) or ICP mass spectrometry (ICP-MS). As the ICP emission analyzer, for example, “ICPE-9000 (manufactured by Shimadzu Corporation)” or the like can be used. As the ICP mass spectrometer, for example, “ICPM-8500 (manufactured by Shimadzu Corporation)”, “ELAN DRC PLUS (manufactured by Perkin Elmer)”, or the like can be used. Further, the content of ammonium ions contained in the silica particles described above is a value quantified using an ion chromatography method. As the ion chromatography method, for example, a non-suppressor ion chromatograph “HIS-NS (manufactured by Shimadzu Corporation)”, “ICS-1000 (manufactured by DIONEX)”, or the like can be used. The sodium and potassium contained in the silica particles may be sodium ion and potassium ion, respectively. By measuring the content of sodium ions, potassium ions, and ammonium ions, sodium, potassium, and ammonium ions contained in the silica particles can be quantified. In addition, content of the sodium, potassium, and ammonium ion described in this specification is the weight of sodium, potassium, and ammonium ions with respect to the weight of the silica particles.

  By containing sodium and at least one selected from potassium and ammonium ions within the above range, the silica particles can be stably dispersed in the chemical mechanical polishing aqueous dispersion. Aggregation of silica particles that cause defects does not occur. Moreover, if it is in the said range, the metal contamination of the wafer after grinding | polishing can be prevented.

  The average particle diameter calculated from the specific surface area measured using the BET method of silica particles is preferably 10 to 100 nm, more preferably 10 to 90 nm, and particularly preferably 10 to 80 nm. When the average particle diameter of the silica particles is within the above range, it is excellent in storage stability as a chemical mechanical polishing aqueous dispersion, and a smooth polished surface free from defects can be obtained. If the average particle size of the silica particles is less than the above range, the polishing rate for the copper film becomes too small, which is not practical. On the other hand, when the average particle diameter of the silica particles exceeds the above range, the storage stability of the silica particles is inferior, which is not preferable.

  The average particle diameter of the silica particles is calculated from the specific surface area measured using the BET method with a flow type specific surface area automatic measuring device “micrometrics FlowSorb II 2300 (manufactured by Shimadzu Corporation)”, for example.

  Below, the method to calculate an average particle diameter from the specific surface area of a silica particle is demonstrated.

Assuming that the shape of the silica particle is a true sphere, the particle diameter is d (nm) and the specific gravity is ρ (g / cm ³ ), the surface area A of n particles is A = nπd ² . N particles mass N becomes N = ρnπd ^3/6. The specific surface area S is represented by the surface area of all the constituent particles per unit mass of the powder. Then, the specific surface area S of n particles is S = A / N = 6 / ρd. Substituting the specific gravity ρ = 2.2 of the silica particles into this formula and converting the unit, the following formula (1) can be derived.

Average particle diameter (nm) = 2727 / S (m ² / g) (1)

  In addition, all the average particle diameters of the silica particles in this specification are calculated based on the formula (1).

  The ratio Rmax / Rmin of the major axis (Rmax) to the minor axis (Rmin) of the silica particles is preferably 1.0 to 1.5, more preferably 1.0 to 1.4, and particularly preferably 1.0 to 1. 3. When Rmax / Rmin is within the above range, a high polishing rate and high planarization characteristics can be exhibited without causing defects in the metal film or the insulating film. If Rmax / Rmin is greater than 1.5, defects after polishing occur, which is not preferable.

  Here, the major axis (Rmax) of the silica particles means the longest distance among the distances connecting the end portions of the images of one independent silica particle image taken by a transmission electron microscope. . The short diameter (Rmin) of the silica particles means the shortest distance among the distances connecting the end portions of the image of one independent silica particle image taken with a transmission electron microscope.

  For example, when the image of one independent silica particle 10a photographed by a transmission electron microscope as shown in FIG. 1 is elliptical, the major axis a of the elliptical shape is determined as the major axis (Rmax) of the silica particle, The elliptical minor axis b is determined as the minor axis (Rmin) of the silica particles. As shown in FIG. 2, when an image of one independent silica particle 10b photographed by a transmission electron microscope is an aggregate of two particles, the longest distance c connecting the end portions of the image is expressed as follows. The longest diameter (Rmax) of the silica particles is determined, and the shortest distance d connecting the end portions of the image is determined as the short diameter (Rmin) of the silica particles. As shown in FIG. 3, when the image of one independent silica particle 10c photographed by a transmission electron microscope is an aggregate of three or more particles, the longest distance e connecting the end portions of the image is shown. Is the long diameter (Rmax) of the silica particles, and the shortest distance f connecting the end portions of the image is determined to be the short diameter (Rmin) of the silica particles.

  For example, by measuring the major axis (Rmax) and minor axis (Rmin) of 50 silica particles by the above-described determination method, and calculating the average value of major axis (Rmax) and minor axis (Rmin), the major axis and The ratio to the minor axis (Rmax / Rmin) can be calculated and obtained.

  The content of the silica particles (A) is preferably 1 to 20% by mass, more preferably 1 to 15% by mass with respect to the total mass of the chemical mechanical polishing aqueous dispersion at the time of use. Preferably it is 1-10 mass%. When the content of the silica particles is less than the above range, a sufficient polishing rate cannot be obtained, which is not practical. On the other hand, when the content of the silica particles exceeds the above range, the cost increases and a stable chemical mechanical polishing aqueous dispersion may not be obtained.

  The method for producing (A) silica particles used in the present embodiment is not particularly limited as long as silica particles in which the content of sodium, potassium and ammonium ions is within the above range are obtained, and a conventionally known method is applied. be able to. For example, it can be produced according to the method for producing a silica particle dispersion described in JP-A No. 2003-109921 and JP-A No. 2006-80406.

  Further, as a conventionally known method, there is a method of producing silica particles by removing alkali from an alkali silicate aqueous solution. Examples of the alkali silicate aqueous solution include a sodium silicate aqueous solution, an ammonium silicate aqueous solution, a lithium silicate aqueous solution, and a potassium silicate aqueous solution that are generally known as water glass. Examples of ammonium silicate include silicates made of ammonium hydroxide and tetramethylammonium hydroxide.

Below, one of the specific preparation methods of the (A) silica particle used for this embodiment is demonstrated. A dilute silicic acid solution containing 20 to 38% by mass of silica and diluting an aqueous sodium silicate solution having a SiO ₂ / Na ₂ O molar ratio of 2.0 to 3.8 with water to have a silica concentration of 2 to 5% by mass A sodium aqueous solution is used. Subsequently, a dilute sodium silicate aqueous solution is passed through the hydrogen-type cation exchange resin layer to generate an active silicate aqueous solution from which most of the sodium ions have been removed. The aqueous silicic acid solution is aged with heat while adjusting the pH to 7-9 with alkali, and grown to the desired particle size to produce colloidal silica particles. During this thermal aging, an active silicic acid aqueous solution and small particles of colloidal silica are added little by little to prepare silica particles having a target particle size in the range of, for example, an average particle size of 10 to 100 nm. The silica particle dispersion thus obtained is concentrated to increase the silica concentration to 20 to 30% by mass, and then passed again through the hydrogen-type cation exchange resin layer to remove most of the sodium ions and pH with an alkali. By adjusting the pH, silica particles containing 5 to 500 ppm of sodium and 100 to 20000 ppm of at least one selected from potassium and ammonium ions can be produced.

  In addition, (A) the content of sodium, potassium and ammonium ions contained in the silica particles is obtained by recovering the silica component by a known method such as centrifugation, ultrafiltration, etc., of the chemical mechanical aqueous dispersion containing the silica particles, It can be calculated by quantifying sodium, potassium and ammonium ions contained in the recovered silica component. Therefore, by analyzing the silica component recovered from the chemical mechanical polishing aqueous dispersion by the above method by a known method, it can be confirmed that the constituent requirements of the present invention are satisfied.

1.2 (B) Amino Acid The chemical mechanical polishing aqueous dispersion according to this embodiment contains (B) an amino acid. The (B) amino acid is preferably at least one amino acid selected from glycine, alanine and histidine. These amino acids have a property of easily forming a coordinate bond with a copper ion, and form a coordinate bond with the surface of the copper film that is the surface to be polished. Thus, the surface roughness of the copper film can be suppressed and high flatness can be maintained, the affinity with copper and copper ions can be increased, and the polishing rate for the copper film can be promoted. Moreover, these amino acids can be easily coordinated with copper ions eluted into the slurry by polishing the copper film, and can prevent the precipitation of copper. As a result, it is possible to suppress the occurrence of polishing defects such as scratches on the copper film. Furthermore, these amino acids can efficiently capture unnecessary metals from the surface of the object to be polished after polishing, and can efficiently remove unnecessary metals from the surface of the object to be polished. Further, when a water-soluble polymer described later is used in combination, depending on the type and amount of addition, the water-soluble polymer may be adsorbed on the surface of the copper film, thereby inhibiting polishing and reducing the polishing rate. Even in such a case, the combined use of the amino acid (B) has an effect of increasing the polishing rate of the copper film despite the addition of the water-soluble polymer. Further, by containing the amino acid (B), it is possible to promote the liberation into the solution by inhibiting the adsorption of sodium ions and potassium ions, which are crushed during the polishing and eluted from the silica particles, onto the copper film surface. As a result, it can be effectively removed from the surface of the workpiece. Furthermore, by containing the (B) amino acid, it can moderately interact with the silanol groups of the (A) silica particles, and the dispersion stability of the silica particles in the polishing composition can be improved. .

  The content of the amino acid (B) is preferably 0.001 to 3.0% by mass, more preferably 0.01 to 2.0% by mass, based on the total mass of the chemical mechanical polishing aqueous dispersion. . If the amino acid content is less than the above range, dishing of the copper film may occur. On the other hand, when the content of the amino acid exceeds the above range, the silica particles may aggregate.

1.3 (C) Organic acid having nitrogen-containing heterocycle and carboxyl group The chemical mechanical polishing aqueous dispersion according to this embodiment may contain (C) an organic acid having a nitrogen-containing heterocycle and a carboxyl group. it can. The organic acid having the (C) nitrogen-containing heterocyclic ring and the carboxyl group can enhance the effect of the (B) amino acid when used in combination with the (B) amino acid. (C) As an organic acid having a nitrogen-containing heterocyclic ring and a carboxyl group, for example, an organic acid containing a heterocyclic six-membered ring having at least one nitrogen atom, an organic acid containing a heterocyclic compound consisting of a heterocyclic five-membered ring, etc. Can be mentioned. More specifically, quinaldic acid, quinolinic acid, quinoline-8-carboxylic acid, picolinic acid, xanthurenic acid, quinurenic acid, nicotinic acid, anthranilic acid and the like can be mentioned.

  The content of the organic acid having (C) the nitrogen-containing heterocycle and the carboxyl group is preferably 0.001 to 3.0% by mass, more preferably 0, based on the total mass of the chemical mechanical polishing aqueous dispersion. 0.01 to 2.0% by mass. (C) If the content of the organic acid having a nitrogen-containing heterocyclic ring and a carboxyl group is less than the above range, dishing of the copper film may be caused. On the other hand, if the content of (C) the organic acid having a nitrogen-containing heterocyclic ring and a carboxyl group exceeds 3.0% by mass, the silica particles may aggregate.

1.4 Other Additives 1.4.1 Oxidizing Agent The chemical mechanical polishing aqueous dispersion according to this embodiment may contain an oxidizing agent as necessary. Examples of the oxidizing agent include ammonium persulfate, potassium persulfate, hydrogen peroxide, ferric nitrate, diammonium cerium nitrate, iron sulfate, ozone, hypochlorous acid and its salts, potassium periodate, and peracetic acid. Can be mentioned. These oxidizing agents can be used alone or in combination of two or more. Of these oxidants, ammonium persulfate, potassium persulfate, and hydrogen peroxide are particularly preferred in view of oxidizing power, compatibility with the protective film, ease of handling, and the like. The content of the oxidizing agent is preferably 0.05 to 5% by mass, more preferably 0.08 to 3% by mass, based on the total mass of the chemical mechanical polishing aqueous dispersion. When the content of the oxidizing agent is less than the above range%, a sufficient polishing rate for the copper film may not be obtained. On the other hand, when the content exceeds the above range, dishing or corrosion of the copper film may be caused.

1.4.2 Water-soluble polymer The chemical mechanical polishing aqueous dispersion according to this embodiment may contain a water-soluble polymer, if necessary. By adding a water-soluble polymer, dishing and corrosion of the copper film can be effectively suppressed.

  Examples of the water-soluble polymer include polyacrylic acid and its salt, polymethacrylic acid and its salt, polyvinyl alcohol, polyvinyl pyrrolidone, polyacrylamide and the like. Among these water-soluble polymers, polyvinyl pyrrolidone having a carbonyl group in the repeating unit, polymethacrylic acid and a salt thereof, polyacrylic acid and a salt thereof, or a derivative thereof is preferable. Polyacrylic acid and polymethacrylic acid are more preferable in that they do not affect the stability of the abrasive grains. Polyacrylic acid is particularly preferable because it can impart an appropriate viscosity to the chemical mechanical polishing aqueous dispersion according to the present embodiment.

  As the weight average molecular weight of the water-soluble polymer, for example, a weight average molecular weight (Mw) in terms of polyethylene glycol measured by GPC (gel permeation chromatography) can be applied. The water-soluble polymer has a weight average molecular weight (Mw) of preferably 10,000 to 1,500,000, more preferably 40,000 to 1,200,000. When the weight average molecular weight is within the above range, polishing friction can be greatly reduced, so that the occurrence of dishing or corrosion of the copper film can be suppressed. When the weight average molecular weight is smaller than the lower limit, the effect of reducing polishing friction is small, and the effect of suppressing the dishing or corrosion of the copper film is poor. On the other hand, if the weight average molecular weight is larger than the upper limit, the storage stability of the silica particles may be impaired, and the viscosity of the aqueous dispersion is excessively increased, and there is a problem that the polishing liquid supply device is loaded. May occur.

  The content of the water-soluble polymer is preferably 0.001 to 1.0 mass%, more preferably 0.01 to 0.5 mass%, based on the total mass of the chemical mechanical polishing aqueous dispersion. It is. When the content of the water-soluble polymer is less than the above range, the effect of reducing polishing friction is small, and the effect of suppressing the dishing or corrosion of the copper film is inferior. On the other hand, when the content of the water-soluble polymer exceeds the above range, the silica particles may be aggregated.

  In general, when abrasive grains containing a large amount of sodium or potassium are used in the chemical mechanical polishing aqueous dispersion, sodium or potassium derived from the abrasive grains remains on the surface of the object to be polished even by a cleaning operation after polishing. It is thought to cause deterioration of the electrical characteristics of the device, and its use has been avoided. However, by adding the water-soluble polymer, the surface of the copper film is effectively protected, and adsorption of sodium and potassium to the surface of the copper film can be suppressed. It becomes possible to remove sodium and potassium. Furthermore, since the water-soluble polymer can be easily removed by a cleaning operation, it does not remain on the surface of the copper film and deteriorate the electrical characteristics of the device.

1.4.3 Surfactant The chemical mechanical polishing aqueous dispersion according to this embodiment may contain a surfactant as necessary. Surfactants include nonionic surfactants, anionic surfactants or cationic surfactants.

  As said nonionic surfactant, the nonionic surfactant which has a triple bond is mentioned, for example. Specifically, acetylene glycol and its ethylene oxide adduct, acetylene alcohol, etc. are mentioned. Also included are silicone surfactants, polyvinyl alcohol, cyclodextrin, polyvinyl methyl ether, and hydroxyethyl cellulose.

  Examples of the anionic surfactant include carboxylate, sulfonate, sulfate ester salt, phosphate ester salt and the like. Examples of the carboxylate include fatty acid soap and alkyl ether carboxylate. Examples of the sulfonate include alkyl benzene sulfonate, alkyl naphthalene sulfonate, α-olefin sulfonate, and the like. Examples of sulfate salts include higher alcohol sulfate salts, alkyl ether sulfate salts, polyoxyethylene alkylphenyl ether sulfate salts, and the like. Examples of the phosphate ester salt include alkyl phosphate ester salts.

  Examples of the cationic surfactant include aliphatic amine salts and aliphatic ammonium salts. These surfactants can be used alone or in combination of two or more.

  The content of the surfactant is preferably 0.001 to 1.0% by mass, more preferably 0.005 to 0.5% by mass, based on the total mass of the chemical mechanical polishing aqueous dispersion. When the content of the surfactant is within the above range, it is possible to achieve both an appropriate polishing rate and a good surface to be polished.

1.5 pH
The pH of the chemical mechanical polishing aqueous dispersion according to this embodiment is preferably 6 to 12, more preferably 7 to 11.5, and particularly preferably 8 to 11. When the pH is less than 6, hydrogen bonds between silanol groups present on the surface of the silica particles cannot be broken, and the silica particles may be aggregated. On the other hand, if the pH is higher than 12, the basicity is too strong, which may cause wafer defects. As a means for adjusting the pH, for example, adjusting the pH by adding a pH adjuster represented by a basic salt such as potassium hydroxide, ammonia, ethylenediamine, TMAH (tetramethylammonium hydroxide), etc. Can do.

1.6 Method for Producing Chemical Mechanical Polishing Aqueous Dispersion The chemical mechanical polishing aqueous dispersion according to this embodiment is obtained by directly adding (A) silica particles, (B) amino acids, and other additives to pure water. Can be prepared by mixing and stirring. The chemical mechanical polishing aqueous dispersion thus obtained may be used as it is, but a chemical mechanical polishing aqueous dispersion containing each component in a high concentration (concentrated) is prepared and desired at the time of use. It may be used after diluting to a concentration of.

  It is also possible to prepare a plurality of liquids (for example, two or three liquids) containing any of the above-mentioned components and to use them by mixing them at the time of use. In this case, after preparing a chemical mechanical polishing aqueous dispersion by mixing a plurality of liquids, this may be supplied to the chemical mechanical polishing apparatus, or a plurality of liquids may be supplied individually to the chemical mechanical polishing apparatus. A chemical mechanical polishing aqueous dispersion may be formed on a surface plate.

  As a specific example, the chemical mechanical polishing water is composed of a liquid (I) which is an aqueous dispersion containing water and (A) silica particles, and a liquid (II) containing water and (B) an amino acid. A kit for preparing a system dispersion can be mentioned.

  The concentration of each component in the liquids (I) and (II) is particularly as long as the concentration of each component in the chemical mechanical polishing aqueous dispersion finally prepared by mixing these liquids is within the above range. It is not limited. For example, liquids (I) and (II) containing each component at a concentration higher than the concentration of the chemical mechanical polishing aqueous dispersion are prepared, and the liquids (I) and (II) are diluted as necessary at the time of use. Then, these are mixed to prepare a chemical mechanical polishing aqueous dispersion in which the concentration of each component is in the above range. Specifically, when the liquids (I) and (II) are mixed at a weight ratio of 1: 1, the liquids (I) and (I) having a concentration twice the concentration of the chemical mechanical polishing aqueous dispersion are used. II) may be prepared. Moreover, after preparing liquid (I) and (II) of the density | concentration of 2 times or more of the density | concentration of the chemical mechanical polishing aqueous dispersion, and mixing these by 1: 1 weight ratio, each component becomes the said range. You may dilute with water. As described above, the storage stability of the aqueous dispersion can be improved by separately preparing the liquid (I) and the liquid (II).

  When the kit is used, the method and timing of mixing the liquid (I) and the liquid (II) are not particularly limited as long as the chemical mechanical polishing aqueous dispersion is formed at the time of polishing. For example, after the liquid (I) and the liquid (II) are mixed to prepare the chemical mechanical polishing aqueous dispersion, this may be supplied to a chemical mechanical polishing apparatus, or the liquid (I) and the liquid ( II) may be supplied independently to a chemical mechanical polishing apparatus and mixed on a surface plate. Alternatively, the liquid (I) and the liquid (II) may be independently supplied to the chemical mechanical polishing apparatus and mixed in line in the apparatus, or a mixing tank is provided in the chemical mechanical polishing apparatus, You may mix. In line mixing, a line mixer or the like may be used in order to obtain a more uniform chemical mechanical polishing aqueous dispersion.

1.7 Applications The chemical mechanical polishing aqueous dispersion according to this embodiment can be suitably used for chemical mechanical polishing of an object to be processed (for example, a semiconductor device) having a copper film on its surface. That is, according to the chemical mechanical polishing aqueous dispersion according to this embodiment, (B) by containing amino acids, the surface roughness of the copper film is suppressed and high flatness is maintained, and affinity with copper and copper ions is maintained. And the polishing rate for the copper film can be promoted. Thereby, the copper film on the surface can be polished at high speed and selectively without causing defects in the copper film and the low dielectric constant insulating film even under normal polishing pressure conditions. Moreover, according to the chemical mechanical polishing aqueous dispersion according to this embodiment, metal contamination of the wafer can be reduced.

  More specifically, the chemical mechanical polishing aqueous dispersion according to the present embodiment uses, for example, a damascene method in which a semiconductor device using a low dielectric constant insulating film as an insulating film and copper or a copper alloy as a wiring material is used. In the manufacturing process, the present invention can be applied to a process (first polishing process) in which the copper film on the barrier metal film is removed by chemical mechanical polishing.

  In the present invention, the “copper film” refers to a film formed from copper or a copper alloy, and the copper content in the copper alloy is preferably 95% by mass or more.

2. Chemical Mechanical Polishing Method A specific example of the chemical mechanical polishing method according to the present embodiment will be described in detail with reference to the drawings.

2.1 Object to be processed FIG. 4 shows an object to be processed 100 used in the chemical mechanical polishing method according to this embodiment.

(1) First, the low dielectric constant insulating film 20 is formed by a coating method or a plasma CVD method. Examples of the low dielectric constant insulating film 20 include inorganic insulating films and organic insulating films. Examples of the inorganic insulating film include a SiOF film (k = 3.5 to 3.7), a Si—H containing SiO ₂ film (k = 2.8 to 3.0), and the like. As the organic insulating film, a carbon-containing SiO ₂ film (k = 2.7 to 2.9), a methyl group-containing SiO ₂ film (k = 2.7 to 2.9), a polyimide film (k = 3.0). To 3.5), Parylene film (k = 2.7 to 3.0), Teflon (registered trademark) film (k = 2.0 to 2.4), amorphous carbon (k = <2.5) (Where k represents a dielectric constant).

  (2) An insulating film 30 is formed on the low dielectric constant insulating film 20 by using a CVD method or a thermal oxidation method. Examples of the insulating film 30 include a TEOS film.

  (3) The wiring recess 40 is formed by etching the low dielectric constant insulating film 20 and the insulating film 30 so as to communicate with each other.

  (4) The barrier metal film 50 is formed using the CVD method so as to cover the surface of the insulating film 30 and the bottom and inner wall surface of the wiring recess 40. The barrier metal film 50 is preferably Ta or TaN from the viewpoint of excellent adhesion to the copper film and diffusion barrier properties with respect to the copper film. However, the barrier metal film 50 is not limited to this and is Ti, TiN, Co, Mn, Ru or the like. May be.

  (5) By depositing copper on the barrier metal film 50 to form the copper film 60, the workpiece 100 is obtained.

2.2 Chemical Mechanical Polishing Method In order to remove the copper film 60 deposited on the barrier metal film 50 of the object 100, chemical mechanical polishing is performed using the chemical mechanical polishing aqueous dispersion according to the present invention. First, the copper film 60 is continuously polished by chemical mechanical polishing until the barrier metal film 50 is exposed. Usually, it is necessary to stop the polishing after confirming that the barrier metal film 50 is exposed. However, the chemical mechanical polishing aqueous dispersion according to the present invention has a very high polishing rate for the copper film, but hardly polishes the barrier metal film. For this reason, as shown in FIG. 5, since the chemical mechanical polishing cannot proceed when the barrier metal film 50 is exposed, the chemical mechanical polishing can be self-stopped.

  In the chemical mechanical polishing method according to the present embodiment, a commercially available chemical mechanical polishing apparatus can be used. As a commercially available chemical mechanical polishing apparatus, for example, model “EPO-112”, “EPO-222” manufactured by Ebara Manufacturing Co., Ltd .; model “LGP-510”, “LGP-552” manufactured by Lapmaster SFT, Applied Materials Manufactured, model “Mirra” and the like.

Preferred polishing conditions should be appropriately set depending on the chemical mechanical polishing apparatus to be used. For example, when “EPO-112” is used as the chemical mechanical polishing apparatus, the following conditions can be used.
-Surface plate rotation speed: preferably 30-120 rpm, more preferably 40-100 rpm
Head rotation speed: preferably 30 to 120 rpm, more preferably 40 to 100 rpm
-Platen rotation speed / head rotation speed ratio; preferably 0.5-2, more preferably 0.7-1.5
Polishing pressure; preferably 60 to 200 gf / cm ² , more preferably 100 to 150 gf / cm ²
-Chemical mechanical polishing aqueous dispersion supply rate; preferably 50 to 400 mL / min, more preferably 100 to 300 mL / min As described above, in this example, a semiconductor device having excellent flatness of the surface to be polished is obtained. In addition, chemical mechanical polishing can be self-stopped without excessive polishing of the copper film. Further, even if polishing is performed with a normal polishing pressure, the polishing friction can be significantly reduced, so that the load on the lower insulating film 30 and the low dielectric constant insulating film 20 can be reduced.

3. Examples Hereinafter, the present invention will be described by way of examples. However, the present invention is not limited to these examples.

3.1 Preparation of Silica Particle Dispersion No. 3 water glass (silica concentration: 24% by mass) was diluted with water to obtain a diluted sodium silicate aqueous solution having a silica concentration of 3.0% by mass. This diluted sodium silicate aqueous solution was passed through a hydrogen-type cation exchange resin layer to obtain an active silicic acid aqueous solution of pH 3.1 from which most of the sodium ions were removed. Thereafter, 10% by weight aqueous potassium hydroxide solution was immediately added with stirring to adjust the pH to 7.2, followed by further heating and boiling for 3 hours. To the resulting aqueous solution, 10 times the amount of the active silicic acid aqueous solution whose pH was previously adjusted to 7.2 was added little by little over 6 hours to grow the average particle size of the silica particles to 26 nm.

  Next, the dispersion aqueous solution containing the silica particles is concentrated under reduced pressure (boiling point 78 ° C.), and the silica concentration is 32.0 mass%, the average particle diameter of silica is 26 nm, and the pH is 9.8. Got. This silica particle dispersion is again passed through the hydrogen-type cation exchange resin layer to remove most of sodium, and then 10% by mass of potassium hydroxide aqueous solution is added, and the silica particle concentration: 28.0% by mass, pH A silica particle dispersion A of 10.0 was obtained.

Silica particles are recovered from the resulting silica particle dispersion A by centrifugation, titrated in a pH range of 4 to 9 using a 0.1N aqueous sodium hydroxide solution, and the silanol group density is determined from the titration value and BET specific surface area value. It was 2.0 pieces / nm ² when calculated.

  Silica particles are recovered from the resulting silica particle dispersion A by centrifugation, and the silica particles recovered with dilute hydrofluoric acid are dissolved, and ICP-MS (Perkin Elmer, model number “ELAN DRC PLUS”) is used. Used to measure sodium and potassium. Furthermore, ammonium ion was measured using ion chromatography (manufactured by DIONEX, model number “ICS-1000”). As a result, the sodium content was 88 ppm, the potassium content was 5500 ppm, and the ammonium ion content was 5 ppm.

  Silica particle dispersion A was diluted to 0.01% with ion-exchanged water, placed on a collodion membrane having Cu grit having a mesh size of 150 μm, and dried at room temperature. Thus, after preparing a sample for observation so as not to break the particle shape on the Cu grit, using a transmission electron microscope (H-7650, manufactured by Hitachi High-Technologies Corporation) Images were taken, the major axis and minor axis of 50 colloidal silica particles were measured, and the average value was calculated. When the ratio (Rmax / Rmin) was calculated from the average value of the major axis (Rmax) and the average value of the minor axis (Rmin), it was 1.1.

  The average particle size calculated from the specific surface area measured using the BET method was 26 nm. In addition, in the surface area measurement of the colloidal silica particle by BET method, the value which measured the silica particle collect | recovered by concentrating and drying the silica particle dispersion A was used.

  Silica particle dispersions B to D were obtained by the same method as described above while controlling the heat aging time, the type and amount of the basic compound, and the like.

The silica particle dispersion E was produced by the following method. First, 35 kg of high-purity colloidal silica (product number: PL-2; solid content concentration 20.0 wt%, pH 7.4, secondary particle diameter 66 nm) manufactured by Fuso Chemical Industry Co., Ltd. and 140 kg of ion-exchanged water were put into a 40 L autoclave. Hydrothermal treatment was performed at 160 ° C. for 3 hours under a pressure of 0.5 MPa. Next, the dispersion aqueous solution containing the silica particles is concentrated under reduced pressure at a boiling point of 78 ° C., and a silica particle dispersion in which the silica concentration is 20% by mass of the solid content, the secondary particle diameter is 62 nm, and the pH is 7.5. Body E was obtained. The obtained silica particle dispersion E was titrated using a 0.1N sodium hydroxide aqueous solution in a pH range of 4 to 9, and the silanol group density was calculated from the titration value and the value of the BET specific surface area. It was number / nm ^2.

  After the silica particle dispersion F was obtained by the same method as the preparation method of the silica particle dispersion A, hydrothermal treatment (in the preparation of the silica particle dispersion A, the autoclave treatment was further performed for a longer time). And silanol condensation was carried out).

  The silica particle dispersion G was produced by a known method by a sol-gel method using tetraethoxysilane as a raw material.

  Table 1 summarizes the physical property values of the silica particle dispersions A to G produced.

3.2 Synthesis of water-soluble polymer 3.2.1 Preparation of aqueous polyvinylpyrrolidone solution In a flask, 60 g of N-vinyl-2-pyrrolidone, 240 g of water, 0.3 g of a 10% by mass sodium sulfite aqueous solution and 10% by mass of t -Polyvinylpyrrolidone (K30) was produced | generated by adding 0.3 g of butyl hydroperoxide aqueous solution, and stirring for 5 hours under 60 degreeC nitrogen atmosphere. The obtained polyvinylpyrrolidone (K30) was measured by gel permeation chromatography (manufactured by Tosoh Corporation, apparatus model number “HLC-8120”, column model number “TSK-GEL α-M”, eluent is NaCl aqueous solution / acetonitrile). As a result, the weight average molecular weight (Mw) in terms of polyethylene glycol was 40,000. Further, the amount of amino group calculated from the charged amount of monomer was 0 mol / g, and the amount of cationic functional group was 0 mol / g.

  Also, polyvinyl pyrrolidone (K60) and polyvinyl pyrrolidone (K90) were produced by appropriately adjusting the amount of the components added, the reaction temperature, and the reaction time. In addition, as a result of measuring the weight average molecular weight (Mw) of the obtained polyvinyl pyrrolidone (K60) and polyvinyl pyrrolidone (K90) by the method similar to the above, it was 700,000 and 1.2 million, respectively. The amount of amino group calculated from the charged amount of monomer was 0 mol / g, and the amount of cationic functional group was 0 mol / g.

3.2.2 Vinylpyrrolidone / diethylaminomethyl methacrylate copolymer A flask equipped with a reflux condenser, a dropping funnel, a thermometer, a glass tube for nitrogen substitution, and a stirrer was equipped with 70 parts by mass of diethylaminomethyl methacrylate and cetyl acrylate 5 Part by mass, 10 parts by mass of stearyl methacrylate, 10 parts by mass of N-vinylpyrrolidone, 5 parts by mass of butyl methacrylate, and 100 parts by mass of isopropyl alcohol, 0.2 parts by mass of azobisisobutyronitrile (AIBN) are added, Polymerization was performed at 60 ° C. under a nitrogen stream. Next, diethyl sulfate having a molar number of 0.35 times that of 1 mol of diethylaminoethyl methacrylate was added and heated under reflux at 50 ° C. for 10 hours under a nitrogen stream to synthesize a vinylpyrrolidone / diethylaminomethyl methacrylate copolymer. .

  As a result of measuring the obtained copolymer by gel permeation chromatography (manufactured by Tosoh Corporation, apparatus model number “HLC-8120”, column model number “TSK-GEL α-M”, eluent is NaCl aqueous solution / acetonitrile), The weight average molecular weight (Mw) in terms of polyethylene glycol was 400,000. Further, the amount of amino group calculated from the charged amount of monomer was 0.001 mol / g, and the amount of cationic functional group was 0.0006 mol / g.

3.2.3 Hydroxyethyl cellulose The product name “Daicel HEC SP900” (molecular weight 1.4 million) manufactured by Daicel Chemical Industries, Ltd. was used.

3.3 Preparation of Chemical Mechanical Polishing Aqueous Dispersion 50 parts by mass of ion-exchanged water and silica particle dispersion A containing 0.5 parts by mass in terms of silica are placed in a polyethylene bottle, and 1 is added to alanine. .2 parts by mass, 0.03 parts by mass of an acetylenic diol type nonionic surfactant (trade name “Surfinol 485”, manufactured by Air Products), and an aqueous polyvinylpyrrolidone (K30) solution (weight average molecular weight 40,000) An amount corresponding to 0.05 parts by mass was added, and a 10% by mass aqueous potassium hydroxide solution was further added to adjust the pH of the chemical mechanical polishing aqueous dispersion to 9.3. Next, 1.5 parts by mass of ammonium persulfate was added and stirred for 15 minutes. Finally, ion-exchanged water is added so that the total amount of all the components becomes 100 parts by mass, and then filtered through a filter having a pore size of 5 μm to obtain a chemical mechanical polishing aqueous dispersion S1 having a pH of 9.3. It was.

Silica particles are recovered from the chemical mechanical polishing aqueous dispersion S1 by centrifugation, titrated in a pH range of 4 to 9 using a 0.1N aqueous sodium hydroxide solution, and the silanol group density is determined from the titration value and the value of the BET specific surface area. It was 2.0 pieces / nm ² when calculated. From this result, it was found that even when silica particles were recovered from the chemical mechanical polishing aqueous dispersion, the silanol density in the silica particles could be quantified, and the same results as the silica particle dispersion could be obtained.

  Silica particles are recovered from the chemical mechanical polishing aqueous dispersion S1 by centrifugation, and the silica particles recovered with dilute hydrofluoric acid are dissolved. Then, ICP-MS (manufactured by PerkinElmer, model number “ELAN DRC PLUS”) is used. Used to measure sodium and potassium. Furthermore, ammonium ion was measured using ion chromatography (manufactured by DIONEX, model number “ICS-1000”). As a result, the sodium content was 88 ppm, the potassium content was 5500 ppm, and the ammonium ion content was 5 ppm. From this result, even if silica particles are recovered from the chemical mechanical polishing aqueous dispersion, sodium, potassium, and ammonium ions contained in the silica particles can be quantified, and the same result as the silica particle dispersion can be obtained. I understood it.

  Chemical mechanical polishing aqueous dispersions S2 to S10 are the same as those described above except that the types and contents of silica particle dispersion, organic acid, and other additives are changed as shown in Table 2. It was produced in the same manner as dispersion S1. In Table 2, the trade name “Emulgen 104P” (manufactured by Kao Corporation, polyoxyethylene lauryl ether) was used as the “alkyl ether type nonionic surfactant”. In Table 2, “Acetylene diol type nonionic surfactant” is trade name “Surfinol 485” (manufactured by Air Products, 2,4,7,9-tetramethyl-5-decyne-4,7-diol- Dipolyoxyethylene ether) was used.

  The obtained chemical mechanical polishing aqueous dispersions S1 to S10 were put in a 100 cc glass tube and stored at 25 ° C. for 6 months, and the presence or absence of sedimentation was confirmed visually. The results are shown in Table 2. In Table 2, “◯” indicates that no sedimentation and difference in density of the particles are observed, “Δ” indicates that only the difference in density is observed, and “x” indicates that both sedimentation and density differences of the particles are observed. It was evaluated.

3.4 Chemical Mechanical Polishing Test 3.4.1 Polishing Evaluation of Unpatterned Substrate Chemical Mechanical Polishing Equipment (Ebara Seisakusho, Model “EPO112”) and Porous Polyurethane Polishing Pad (Nitta Haas, Part Number “IC1000”) )) And supplying any one of the chemical mechanical polishing aqueous dispersions S1 to S10, the following various polishing rate measuring substrates are subjected to a polishing treatment under the following polishing conditions for 1 minute. The polishing rate and wafer contamination were evaluated by the above method. The results are also shown in Table 2.

3.4.1a Polishing rate measurement (1) Polishing rate measuring substrate-A silicon substrate with an 8-inch thermal oxide film on which a copper film having a thickness of 15,000 angstroms is laminated.
A silicon substrate with an 8-inch thermal oxide film on which a tantalum film having a thickness of 2,000 angstroms is laminated.

(2) Polishing conditions and head rotation speed: 70 rpm
Head load: 200 gf / cm ²
・ Table rotation speed: 70rpm
-Supply speed of chemical mechanical polishing aqueous dispersion: 200 mL / min In this case, the supply speed of chemical mechanical polishing aqueous dispersion refers to a value obtained by assigning the total supply amount of all supply liquids per unit time.

(3) Polishing rate calculation method For the copper film and the tantalum film, the film thickness after the polishing treatment was measured using an electroconductive film thickness measuring instrument (model “Omnimap RS75”, manufactured by KLA Tencor). The polishing rate was calculated from the film thickness decreased by mechanical polishing and the polishing time.

3.4.1b Wafer contamination The copper film was polished in the same manner as in “3.4.1a Measurement of polishing rate”. Subsequently, ultrapure water was dropped on the surface of the sample to extract the residual metal on the surface of the copper film, and the extract was quantified by ICP-MS (manufactured by Yokogawa Analytical Systems, model number “Agilent 7500s”). The results are also shown in Table 2. Wafer contamination, is preferably 3.0atom / cm ² or less, and more preferably 2.5atom / cm ² or less.

3.4.2 Polishing Evaluation of Patterned Wafer A chemical polishing machine (Ebara Seisakusho, model “EPO112”) is equipped with a porous polyurethane polishing pad (Nitta Haas, product number “IC1000”). While supplying any one of the mechanical polishing aqueous dispersions S1 to S10, with respect to the wafer with the following pattern, the point of time when the tantalum film was detected on the surface to be polished was determined as the polishing end point. The polishing treatment was performed in the same manner as the polishing conditions in “4.1a Measurement of polishing rate”, and the flatness and the presence or absence of defects were evaluated by the following methods. The results are also shown in Table 2.

(1) Patterned wafer A silicon nitride film having a thickness of 1,000 angstroms was deposited on a silicon substrate, and a low dielectric constant insulating film (black diamond film) was sequentially laminated on the film to 4,500 angstroms, and further a PETEOS film having a thickness of 500 angstroms. Thereafter, a “SEMATECH 854” mask pattern was processed, and a test substrate in which a 250 angstrom tantalum film, a 1,000 angstrom copper seed film and a 10,000 angstrom copper plating film were sequentially laminated thereon was used.

3.4.2a Evaluation of flatness Copper wiring width (line, L) / insulation per surface to be polished of the patterned wafer after the polishing process using a high resolution profiler (model “HRP240ETCH” manufactured by KLA Tencor) The dishing amount (nm) in the copper wiring portion having a film width (space, S) of 100 μm / 100 μm was measured. The results are also shown in Table 2. It should be noted that the dishing amount is displayed as negative when the upper surface of the copper wiring is convex above the reference surface (upper surface of the insulating film). The dishing amount is preferably -5 to 30 nm, more preferably -2 to 20 nm.

  The amount of erosion in the portion where the fine wiring length in the pattern of 9 μm / 1 μm in the copper wiring width (line, L) / insulating film width (space, S) is continuously 1000 μm per polished surface of the patterned wafer after the polishing process (Nm) was measured. The results are also shown in Table 2. Note that the erosion amount is negative when the upper surface of the insulating layer of the fine wiring portion is convex above the field surface (the upper surface of the wide insulating layer that is not the wiring portion). The erosion amount is preferably -5 to 30 nm, more preferably -2 to 20 nm.

3.4.2b Corrosion Evaluation 10 nm ² using a defect inspection apparatus (manufactured by KLA Tencor, model “2351”) for a copper area of 1 cm × 1 cm per surface to be polished of the patterned wafer after the polishing process. The number of defects having a size of ˜100 nm ² was evaluated. In Table 2, ◯ is the most preferable state with 0 to 10 corrosions. Δ is 11 to 100, which is a preferable condition. X is a state where 101 or more corrosions exist, and it is determined that the polishing performance is poor.

3.4.3 Evaluation Results In Examples 1 to 6, the polishing rate for the copper film was sufficiently high at 8,000 angstrom / min or more, and the polishing rate for the barrier metal film was sufficiently low at 1 to 3 angstrom / min. Therefore, it was found that the polishing selectivity for the copper film was excellent. In any of the examples, there was almost no wafer contamination, no defects were observed, and the storage stability of the chemical mechanical polishing aqueous dispersion was good.

  On the other hand, since S7 used in Comparative Example 1 does not contain (B) an amino acid, in the polishing test of the polishing rate measurement substrate, the polishing rate for the copper film is reduced to 1,000 angstroms / minute, which is practical. It was not a slurry.

  S8 used in Comparative Example 2 contains maleic acid instead of (B) amino acid. Therefore, in the polishing test of the substrate for polishing rate measurement, the polishing rate for the copper film was as low as 2,000 angstrom / min, and it was not a practical slurry.

Since S9 used in Comparative Example 3 uses a silica particle dispersion F having a silanol group density of less than 1.0 / nm ² , the polishing rate for the copper film is a polishing rate for the polishing rate measurement substrate. It was slightly reduced to 6,000 angstroms / minute. Further, since the silica particle dispersion F contains a high concentration of sodium (11250 ppm), wafer contamination was also observed. On the other hand, in the polishing test of the patterned wafer, the occurrence of copper film dishing and corrosion was observed, and a good polished surface could not be obtained.

Since S10 used in Comparative Example 4 uses the silica particle dispersion G having a silanol group number exceeding 3.0 / nm ² , the polishing rate for the copper film is 7 in the polishing test for the polishing rate measuring substrate. On the other hand, the polishing rate for the tantalum film was as high as 30 angstrom / min. On the other hand, in the polishing test of the patterned wafer, the occurrence of copper film dishing, insulating film erosion, and corrosion was observed, and a good polished surface could not be obtained.

  From the above results, it was found that the use of the chemical mechanical polishing aqueous dispersions of Examples 1 to 6 has a high polishing rate and a high polishing selectivity for the copper film, and can reduce surface defects on the surface to be polished. .

10a, 10b, 10c ... Silica particles, 20 ... Low dielectric constant insulating film, 30 ... Insulating film (cap layer), 40 ... Recess for wiring, 50 ... Barrier metal film, 60 ... Copper film, 100 ... Object to be processed

Claims (10)

(A) silica particles;
(B) an amino acid;
An aqueous dispersion for chemical mechanical polishing for polishing a copper film containing
The (A) silica particle is a chemical mechanical polishing aqueous dispersion having the following chemical properties.
The silanol group density calculated from the specific surface area measured using the BET method and the amount of silanol groups measured by titration is 1.0 to 3.0 / nm ² . In claim 1,
(B) The chemical mechanical polishing aqueous dispersion, wherein the amino acid (B) is at least one selected from glycine, alanine, and histidine. In claim 1 or 2,
Further, (C) a chemical mechanical polishing aqueous dispersion containing an organic acid having a nitrogen-containing heterocyclic ring and a carboxyl group. In claim 3,
The chemical mechanical polishing aqueous dispersion, wherein (C) the organic acid having a nitrogen-containing heterocyclic ring and a carboxyl group is quinaldic acid or quinolinic acid. In any one of Claims 1 thru | or 4,
Further, the (A) silica particles are chemical mechanical polishing aqueous dispersions having the following chemical properties.
Sodium, potassium and ammonium ion content measured from elemental analysis by ICP emission spectrometry or ICP mass spectrometry and quantitative analysis of ammonium ion by ion chromatography, sodium content: 5 to 500 ppm, potassium and ammonium ion The content of at least one selected from: satisfies the relationship of 100 to 20000 ppm. In any one of Claims 1 thru | or 5,
The ratio (Rmax / Rmin) of the major axis (Rmax) to the minor axis (Rmin) of the (A) silica particles is 1.0 to 1.5, and is an aqueous dispersion for chemical mechanical polishing. In any one of Claims 1 thru | or 6,
(A) The aqueous dispersion for chemical mechanical polishing whose average particle diameter computed from the specific surface area measured using the BET method of the said silica particle is 10-100 nm. In any one of Claims 1 thru | or 7,
An aqueous dispersion for chemical mechanical polishing having a pH of 6-12. A method for chemically mechanically polishing an object having a copper film formed on a barrier metal film,
Using the chemical mechanical polishing aqueous dispersion according to any one of claims 1 to 8, the copper film is subjected to chemical mechanical polishing, and the chemical mechanical polishing is stopped when the barrier metal film is exposed. Chemical mechanical polishing method. A method for producing a chemical mechanical polishing aqueous dispersion by adding (A) silica particles and (B) an amino acid,
Said (A) silica particle is a manufacturing method of the aqueous dispersion for chemical mechanical polishing which has the following chemical property.
The silanol group density calculated from the specific surface area measured using the BET method and the amount of silanol groups measured by titration is 1.0 to 3.0 / nm ² .

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