JP2010021283A - Solid state imaging device and manufacturing method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a solid state imaging device of high rigidity and precision, having a range finding characteristic with a plurality of adjoining imaging elements. <P>SOLUTION: The imaging elements wherein a plurality of separated imaging regions adjoin each other to be one body on a single semiconductor substrate, are mounted on a translucent glass substrate with electric wiring which includes a through-hole, cut, or groove so that the region where insulating sealing resin is formed between a semiconductor substrate and the glass substrate communicates with the outside. So, a plurality of adjoining imaging elements are flip-chip mounted on the glass substrate, added with injection of sealing resin for reinforcement. Thus, a small and high precision compound-eye camera is assembled with well workability, resulting in high rigidity and high precision in collimation. As a result, an excellent solid state imaging device is provided which allows range finding and monitoring, without requiring a large space. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a solid-state imaging device and a manufacturing method thereof, and in particular, a small-sized solid-state imaging device formed using a solid-state imaging device such as a surveillance camera, a medical camera, an in-vehicle camera, an information communication terminal camera, and the like. The present invention relates to a manufacturing method, and more particularly, to a solid-state imaging device having a plurality of imaging elements and having added value such as distance measurement and a manufacturing method thereof.

  In recent years, the demand for small cameras for mobile phones, in-vehicle components, etc. has been rapidly increasing. This type of small camera uses a solid-state imaging device that uses a solid-state imaging device and outputs an image input via an optical system such as a lens as an electrical signal. With the downsizing and high performance of this image pickup apparatus, the camera has become smaller and the use in various fields has increased, expanding the market as a video input apparatus. In a conventional image pickup apparatus using a semiconductor image pickup device, components such as an LSI on which a lens, a semiconductor image pickup device, a driving circuit thereof, a signal processing circuit, and the like are mounted are respectively formed in a housing or a structure and combined. Furthermore, a compound eye lens structure having an additional function such as a distance measuring function has been developed.

  In particular, in the case of distance measurement using this compound eye lens, high accuracy is required for miniaturization. Under such circumstances, as shown in Patent Document 1 and Patent Document 2, a small stereo structure having two image sensors on a single semiconductor substrate has been proposed. By using two adjacent image sensors on a single semiconductor substrate as a single unit, it is possible to achieve extremely high accuracy with respect to the parallelism of the two image sensors and the baseline length of the distance between the optical axes. Can be obtained. In addition, by using two image sensors that are normally used in a single unit, there is a merit that a distance measuring function is provided while having a function as a normal camera. Furthermore, Patent Document 2 also mentions that if two semiconductor chips, which are usually cut out from a wafer one by one, are cut out together, the current sensor specifications can be used as they are. Patent Documents 1 and 2 describe the use of such an image pickup device for a stereo camera, but do not describe details of the mounting structure and mounting method of the image pickup device. In one image sensor, there are electrode pads on four sides, and the cut-out area is made as narrow as possible, so there are many electrode pads in the adjacent area, and how to extract the electric signals It has become.

  On the other hand, Patent Document 3 also describes a semiconductor chip in which two image pickup regions are adjacent to each other. This is a specific method for satisfying higher accuracy. A method of flip chip mounting to a substrate is shown. The semiconductor chip used here is one in which two one-dimensional array chips specialized for distance measurement are arranged in parallel to Patent Document 1 and Patent Document 2, and the number of wiring pads is small.

JP-A-9-74572 JP 2007-322128 A JP-A-9-27606

  However, in the imaging apparatuses disclosed in Patent Documents 1 and 2, although the merit of the structure in which two imaging elements are arranged in parallel is described, there are various problems when actually manufactured. For example, it is difficult to align the optical axis with the lens simply by installing the image sensor in parallel, and it has not been able to make full use of the high precision distance measurement. Also, in the case of mounting by the wire bonding method as the conventional mounting method, if there are actually a large number of pads in the horizontal direction, the number of electrode pads existing between adjacent image sensors overlaps the imaging area. It is difficult to route the wire without it.

  Patent Document 3 describes specific materials and flip chip mounting. However, what is shown in this document is a one-dimensional array of image sensors, and since there are few electrode pads, there is no difficulty as described above. However, in the case of the two-dimensional image sensor of the one-dimensional array, the object to be measured is fixed and can be used as an application for simply measuring the distance. The image cannot be projected. In order to have a distance measuring function while having a function as a camera, an image sensor is not a one-dimensional array element, but a two-dimensional array element is required. In this case, since the number of pads increases rapidly, an Au bump If only Ag paste is used as a connecting member around the wire, the strength cannot be ensured, which causes a defect. Even if the sealing resin is injected to ensure the strength of the surroundings with a sealing resin as is normally done, the resin leaks into the imaging region or the electrode pad between the imaging elements is densely packed. There is a problem that does not enter.

FIG. 14 shows an example of a two-piece integrated image sensor mounted on a glass substrate.
Electrode pads 103 and 104 are formed on the glass substrate 101, and the electrode pads 103 and the electrode pads 104 are wired and electrically connected on the surface of the glass substrate 101, respectively. The electrode pad 103 is used for connection with the solid-state image sensor 105, and the electrode pad 104 is used for electrical connection with a printed wiring board that extracts the signal of the solid-state image sensor 105 to the outside. The solid-state imaging device 105 is in a state where two imaging regions 106 are integrated. Then, metal bumps (not shown) are formed on the electrical wiring pads on the back surface and mounted on the electrode pads 103. At this time, it is desirable to inject an insulating sealing resin in order to ensure the adhesion strength and electrical connection reliability of the solid-state imaging device 105. However, when injected as it is, the insulating sealing resin leaks into the imaging region, or there is no air escape path in a narrow region between adjacent imaging regions, so that the insulating sealing resin (not shown) is used. There was a problem of not getting in. As a result, it has been difficult to manufacture a solid-state imaging device having a ranging function with a good imaging area, strength, and high electrical connection reliability. In particular, there has been a problem that application to an in-vehicle camera that requires a ranging function and high reliability is very difficult.

The present invention has been made in view of the above circumstances, and an object thereof is to provide an excellent solid-state imaging device that is small in size and can be monitored without taking up space.
In particular, it is possible to inject a sealing resin for reinforcement after flip-chip mounting a plurality of adjacent image sensors on a substrate, and to assemble a compact and high-precision compound eye camera with good workability. It is an object of the present invention to provide a solid-state imaging device capable of obtaining high strength and high accuracy of optical axis alignment and a mounting method thereof.

In the solid-state imaging device of the present invention, the imaging device including a plurality of imaging regions formed at a predetermined interval on a single semiconductor substrate, and the translucent substrate including a wiring portion are the imaging devices. The image pickup element and the wiring part are electrically connected via an electrical connection part, and the area around the electrical connection part is overlapped so that the region and the wiring part of the translucent substrate are opposed to each other. A solid-state imaging device surrounded by an insulating sealing resin, wherein the translucent substrate has a through hole, a groove, or a cut so that the semiconductor substrate and the translucent substrate communicate with the outside. It is characterized by having.
With this configuration, the translucent substrate has a through hole, a concave groove, or a cut so that the region where the insulating resin is formed between the semiconductor substrate and the translucent substrate communicates with the outside. Therefore, after the flip-chip mounting is performed on the electrode pad portions that are closely packed in the adjacent solid-state imaging device, the insulating sealing resin can be injected for ensuring the strength. Therefore, it is possible to provide a solid-state imaging device having a configuration of a plurality of imaging devices that ensures the adhesion strength of the plurality of imaging devices to the light-transmitting substrate and has high reliability and high accuracy.

In the solid-state imaging device according to the present invention, the insulating sealing resin is formed so as to avoid an imaging region.
With this configuration, the insulating sealing resin for reinforcing the adhesion strength does not hinder the imaging function.

In the solid-state imaging device according to the present invention, the number of the imaging regions is two.
With this configuration, it is possible to obtain highly accurate distance measurement characteristics for a short distance by using the parallel optical axes and the short base line lengths of the two image sensors simply by trigonometry.

In the solid-state imaging device according to the present invention, a through-hole, a cut, or a concave groove is provided in the translucent substrate region facing the portion between the two imaging regions.
With this configuration, the insulating sealing resin necessary for reinforcing the terminal connection can be sufficiently supplied even in the region where the electrode pads are most densely packed.

In the solid-state imaging device according to the present invention, an optical filter film is formed on the surface of the translucent substrate.
With this configuration, optical characteristics can be improved.

In the solid-state imaging device according to the present invention, an antireflection film is formed on the surface of the translucent substrate.
With this configuration, optical characteristics can be improved.

Further, in the solid-state imaging device according to the present invention, the same number of lenses according to a plurality of spaced imaging regions is based on the surface of the translucent glass substrate on which the imaging element is not installed. It is characterized by being installed in a housing.
With this configuration, effective optical information with high accuracy can be obtained from all the image sensors.

Further, the present invention is characterized in that, in the solid-state imaging device, two lenses are installed in the housing for two imaging regions.
With this configuration, it is possible to obtain highly accurate distance measurement characteristics for a short distance by using the parallel optical axes and the short base line lengths of the two image sensors simply by trigonometry.

In the solid-state imaging device according to the present invention, a lens barrel in which a distance between the lens and the imaging element is constant and a light-shielding wall that prevents light from leaking between each pair of adjacent lenses and the imaging element is provided. It is characterized by being provided.
With this configuration, optical information in each image sensor can be made constant, and high-precision image information and information can be obtained without inputting unnecessary information such that extra light from a lens adjacent to each image sensor enters. Processing can be performed.

In the solid-state imaging device according to the present invention, the light-transmitting substrate is connected to a circuit board through an electrical connection portion.
With this configuration, signal information can be input to an electric circuit that effectively processes information from the image sensor.

The method of manufacturing a solid-state imaging device according to the present invention includes a step of forming a bump on a terminal portion of an imaging device having a plurality of imaging regions formed at a predetermined interval on a single semiconductor substrate, and the bump A step of supplying a conductive adhesive to the substrate, a step of providing a translucent substrate having a wiring portion and having a through hole, a notch or a groove in a region corresponding to the imaging region, and the conductive Mounting the bumps to which the adhesive is attached on the wiring part formed on the translucent substrate to form an electrical connection unit, and integrating the imaging element and the translucent substrate; A step of curing the conductive adhesive, a step of injecting an insulating sealing resin around the conductive adhesive cured while irradiating only the imaging region with a mask on the translucent substrate side, Insulated sealing in an uncured state when injected It is characterized by comprising a step of curing the fat.
With this configuration, it is possible to secure the adhesion strength of the plurality of image sensors to the light-transmitting substrate and manufacture a solid-state image sensor having a plurality of image sensor configurations with high reliability and high accuracy.

Further, according to another method of manufacturing a solid-state imaging device of the present invention, in the step of injecting the insulating sealing resin, by using an ultraviolet curable sealing resin, the imaging region is expanded and simultaneously irradiated with ultraviolet light. It is characterized in that the sealing resin cured and cured around the imaging region is formed in a dam shape.
With this configuration, the insulating sealing resin for reinforcing the adhesion strength does not leak into the imaging region and does not hinder the imaging function.

According to another aspect of the present invention, there is provided a method of manufacturing a solid-state imaging device, wherein the insulating sealing resin is injected between the imaging element and the translucent glass substrate through a through hole, a cut, or a concave groove. The insulating sealing resin is injected while venting air.
With this configuration, the insulating sealing resin can be effectively injected even in a region where the electrode pads are densely packed.

In another method of manufacturing a solid-state imaging device according to the present invention, in the step of curing the uncured insulating sealing resin, the mask is removed, and the entire surface is irradiated with ultraviolet rays so that the uncured insulating property is removed. It is characterized by curing the sealing resin.
With this configuration, after the dam-shaped cured product is formed so that the insulating sealing resin does not leak into the imaging region, the remaining uncured insulating sealing resin can be cured.

According to another aspect of the present invention, there is provided a method for manufacturing a solid-state imaging device, wherein the uncured insulating sealing resin is cured by thermal curing in the step of curing the uncured insulating sealing resin. Yes.
With this configuration, after the dam-shaped cured product is formed so that the insulating sealing resin does not leak into the imaging region, the remaining uncured insulating sealing resin can be cured.

Further, in another method for manufacturing a solid-state imaging device according to the present invention, in the step of injecting the insulating sealing resin, a mask for ultraviolet irradiation irradiates the imaging region and a part of the periphery thereof. It is characterized by the formation of a dam with a part of the gap around it.
With this configuration, when the internal pressure is increased when the uncured insulating sealing resin is heat-cured, a path for releasing the internal gas is secured, and unnecessary force is applied when the insulating sealing resin is cured. And a good cured state can be secured.

In addition, in the step of injecting the insulating sealing resin, a deficient amount of the insulating sealing resin is additionally injected from the through hole, the cut, or the concave groove after the injection is completed.
With this configuration, even when the resin shortage occurs in the dense area of the electrode pad when the insulating sealing resin is injected, the sealing resin can be supplied to a necessary portion by additionally injecting.

  As described above, by using the solid-state imaging device and the manufacturing method thereof according to the present invention, a plurality of adjacent imaging elements are flip-chip mounted on a light-transmitting substrate, and then sealing resin is injected for reinforcement. Thus, a compact and high-precision compound eye camera can be assembled with good workability, and high strength and high accuracy of optical axis alignment can be obtained. As a result, it is possible to provide an excellent solid-state imaging device capable of measuring and monitoring without taking up space.

  According to the present invention, it is possible to provide an excellent solid-state imaging device capable of measuring and monitoring with a plurality of imaging elements with high strength and high accuracy.

Hereinafter, embodiments according to the present invention will be described in detail with reference to the drawings.
(Embodiment 1)
The first embodiment will be described with reference to FIGS.

  As shown in FIGS. 1 to 5, the solid-state imaging device according to the first embodiment of the present invention includes a solid-state imaging device having two imaging regions 6 formed on a silicon substrate as a semiconductor substrate at a predetermined interval. The imaging element 5 and the translucent glass substrate 1 as a translucent substrate provided with a wiring part are overlapped so that the imaging region 5 and the wiring part C1 of the glass substrate 1 face each other, and solid-state imaging The element 5 and the wiring part C1 are electrically connected via an electrical connection part 14 (a connection part between the electrode pad 3 of the glass substrate and the bump 15 of the solid-state imaging device), and the electrical connection part 14 A solid-state imaging device having a periphery surrounded by an insulating sealing resin 7, wherein the region where the insulating sealing resin is formed between the semiconductor substrate and the glass substrate 1 communicates with the outside. The glass substrate 1 has a through hole 2. It is a sign.

  FIG. 1 is a partially exploded perspective view of the solid-state imaging device according to the first embodiment. Here, a through-hole 2 and electrode pads 3 and 4 are formed in a translucent glass substrate 1 as a translucent substrate, and each of the electrode pad 3 and the electrode pad 4 is on the surface of the glass substrate 1. Wired and electrically connected. The electrode pads 3 are for connection to the solid-state image pickup device 5 and are provided corresponding to the metal bumps 15 formed around the respective image pickup regions 6 of the solid-state image pickup device 5. It can be done. The electrode pad 4 is for electrical connection with a printed wiring board that takes out the signal of the solid-state imaging device 5 to the outside. As described above, the solid-state imaging device 5 has a structure in which two imaging regions 6 are formed on the same substrate. Then, metal bumps 15 (not shown) are formed on the back surface of the solid-state imaging device (substrate) 5 without electrical wiring pads (not shown) and mounted on the electrode pads 3. At this time, insulative sealing resin 7 is injected around the connection portion 14 between the metal bump 15 and the electrode pad 3 in order to ensure the adhesion strength and electrical connection reliability of the solid-state imaging device 5.

  If the translucent glass substrate 1 is in the form of a plate, the insulating sealing resin (7 in FIG. 5) does not enter because there is no air escape path in a narrow region between adjacent imaging regions. However, since the through hole 2 is formed, it becomes an air escape path, and the insulating sealing resin 7 can enter the narrow area between the adjacent imaging areas.

FIG. 2 is a partial assembly diagram of the solid-state imaging device according to the first embodiment.
A solid-state imaging device 5 is mounted on a light-transmitting glass substrate 1 and an insulating sealing resin 7 is injected. The insulating sealing resin 7 surrounds the periphery of the connection portion 14 of the metal bump 15 of the solid-state imaging device 5 without leaking to the imaging region, and ensures adhesion strength. A solder ball 8 is attached on the electrode pad 4.

FIG. 3 is a partially exploded perspective view of the solid-state imaging device according to the first embodiment.
The translucent glass substrate 1 on which the solid-state imaging device 5 is mounted and the solder balls 8 are attached is inverted and solder-mounted on the printed wiring board 9, and the strength is reinforced by the underfill 10. The through-hole 2 formed in the translucent glass substrate 1 serves as an air escape path, and the insulating sealing resin 7 injected in the previous step is exposed. In this state, a lens housing 12 in which a plurality of lenses 11 are installed from above is prepared. A light shielding wall 13 is formed in the lens housing 12. The lens casing 12 is mounted with the surface of the translucent glass substrate 1 on the side where the solid-state imaging element 5 is not mounted as a reference plane, and is integrated with the printed wiring board 9 to complete a solid-state imaging device.

  In the present embodiment, solder is directly mounted on a printed wiring board by solder balls. However, an indirect conduction method in which a conductive member is interposed is used according to the thickness of the solid-state imaging device. Also good. Further, a method of cutting the printed wiring board side or making a through hole may be used.

FIG. 4 is an assembled view of the solid-state imaging device according to the first embodiment. FIG. 5 is a cross-sectional view of the completed assembly of the solid-state imaging device according to the first embodiment.
A translucent glass substrate 1 is mounted on the surface of the printed wiring board 9 via solder balls 8, and the periphery of the solder balls 8 is reinforced by an underfill 10. A solid-state image pickup device 5 having an image pickup region 6 integrated with two pieces is mounted on the translucent glass substrate 1 through an electrical connection portion 14, and an insulating sealing resin 7 is injected without any shortage around the solid-state image pickup device 5. It is cured. An internal air escape path is secured by the through-hole 2 formed in the translucent glass substrate 1, and the insulating sealing resin 7 finally enters the through-hole 2 and is cured. Further, the insulating sealing resin 7 does not leak into the imaging region 6 of the solid-state imaging device 5 by the manufacturing method of the present invention described later.

  Furthermore, the lens housing 12 in which the two lenses 11 are installed is mounted with reference to the surface of the translucent glass substrate 1 on which the solid-state imaging device 5 is not mounted. A light shielding wall 13 that blocks light between the two imaging regions 6 is provided.

  Due to such a structure, the optical information in the compound eye lens 11 can be accurately and uniformly set the distance from the translucent glass substrate 1 by the light shielding wall 13 without leaking each light next to it. This is also incident on each imaging region 6 of the solid-state imaging device 5 mounted on the translucent glass substrate 1 with high accuracy. Since the two imaging regions 6 are formed on a single semiconductor substrate, they have a highly accurate baseline length. As a result, it is possible to have a highly accurate ranging characteristic. Further, the adhesion strength between the solid-state imaging device 5 and the translucent glass substrate 1 and the adhesion strength between the translucent glass substrate 1 and the printed wiring board 9 are sufficiently reinforced by the insulating adhesive 7 and the underfill 10. Is secured. Further, the connection between the solid-state imaging device 5 and the glass substrate 1 is performed by connecting electrode wiring pads (not shown) around each imaging region corresponding to each imaging region without performing wiring in the solid-state imaging device 5. Since each of the imaging regions 6 can be directly connected to the wiring portion on the glass substrate 1, it can be connected to the peripheral portion of the solid-state imaging device substrate (chip). Bumps are not concentrated, and noise caused by unnecessary wiring routing can be suppressed.

  That is, by implementing the present invention, it is possible to obtain a solid-state imaging device having good imaging characteristics, high-precision ranging characteristics, and high electrical connection reliability due to high strength. In particular, it is effective for application to an in-vehicle camera that requires a ranging function and high reliability.

  In addition, you may use for the translucent glass substrate 1 what formed the optical filter film or the antireflection film. In that case, the optical characteristics can be further improved.

(Embodiment 2)
FIG. 6 is a partially exploded perspective view of the solid-state imaging device according to the second embodiment.
The translucent glass substrate 1 is provided with a cut 2A. This is formed for securing the air escape path similar to the through hole 2 in the first embodiment. Since other parts are the same as those of the solid-state imaging device of the first embodiment, description thereof is omitted here.
By adopting such a structure, it is possible to cope with a case where it is difficult to form a through hole. As a result, it goes without saying that the same effect as in the first embodiment can be obtained.

(Embodiment 3)
FIG. 7 is a partially exploded perspective view of the solid-state imaging device according to the third embodiment.
A concave groove 2B is formed in the translucent glass substrate 1. This is formed for securing an air escape path similar to the through hole 2 and the notch 2 in the first and second embodiments. Since other parts are the same as those of the solid-state imaging device of the first embodiment, description thereof is omitted here.
By adopting such a structure, it is possible to cope with a case where it is difficult to form a through hole. As a result, it goes without saying that the same effect as in the first embodiment can be obtained.

  In the first to third embodiments, the air escape path securing portion is between the imaging areas. However, depending on the viscosity of the sealing resin and the coating method, a conduction hole, a cut, and a recess are formed in other portions. It may be.

(Embodiment 4)
8 and 9 are cross-sectional views illustrating the method for manufacturing the solid-state imaging device according to the fourth embodiment. FIG. 10 is a schematic plan view illustrating a method for manufacturing the solid-state imaging device according to the fourth embodiment. FIG. 11 is a plan view of a mask at the time of ultraviolet irradiation used in the method of manufacturing the solid-state imaging device according to the fourth embodiment.

  First, as shown in FIG. 8A, metal bumps 15 are formed on the electrode pads around each imaging region 6 of the solid-state imaging device 5 having two imaging regions 6.

  Next, as shown in FIG. 8B, a conductive adhesive 16 is attached to the surface of the metal bump 15 of the solid-state imaging device 5. Then, the solid-state imaging device 5 in which the conductive adhesive 16 is attached is mounted on the electrode pad 3 of the translucent glass substrate 1 on which the through hole 2 and the electrode pads 3 and 4 are formed. Thereafter, the conductive adhesive 16 is thermally cured with the solid-state imaging device 5 mounted.

  Subsequently, as shown in FIGS. 8C and 10, the mask 17 shown in FIG. 11 is prepared, and the insulating sealing resin 7 is injected while irradiating the imaging region 6 with ultraviolet rays. Since the insulating sealing resin 7 used at this time is ultraviolet curable, the insulating sealing resin 7 is injected and enters the inside, and is irradiated with the ultraviolet rays incident from the opening of the mask 17, Resin curing proceeds only in that part. And the resin hardening part 18 shown in FIG. 10 is formed.

  Thereby, since the resin hardening part 18 is formed around the imaging region 6, the insulating sealing resin 7 does not leak into the imaging region 6. Moreover, since the through-hole 2 is formed in the translucent glass substrate 1, the escape route for the air of the injected insulating sealing resin 7 is secured, and even if the resin cured portion 18 is formed. The insulating sealing resin 7 can be spread over a narrow region between the adjacent imaging regions 6 without the insulating sealing resin 7 not being injected halfway. When the insulating sealing resin 7 is sufficiently injected and the resin cured portion 18 is sufficiently formed around the imaging region 6, the resin injection is stopped and the mask is removed. By doing so, the whole uncured insulating sealing resin 7 is irradiated with ultraviolet rays through the translucent glass substrate 1, and all the uncured insulating sealing resin 7 is cured.

Then, as shown in FIG. 8D, solder balls 8 are formed on the electrode pads 4.
Thereafter, as shown in FIG. 9A, the translucent glass substrate 1 on which the solid-state imaging device 5 is mounted is solder-mounted on the printed wiring board 9 and reinforced with the underfill 10.

  Finally, as shown in FIG. 9B, the lens housing 12 in which the lens 11 is installed is aligned with respect to the surface of the translucent glass substrate 1 on which the solid-state imaging device 5 is not mounted. And install.

  By using such a manufacturing method, it is possible to manufacture a solid-state imaging device having good imaging characteristics, high-precision ranging characteristics, and high electrical connection reliability due to high strength.

(Embodiment 5)
FIG. 12 is a schematic plan view illustrating a method for manufacturing the solid-state imaging device according to the fifth embodiment. FIG. 13 is a plan view of a mask at the time of ultraviolet irradiation used in the method for manufacturing the solid-state imaging device of the fifth embodiment.
First, in the steps shown in FIGS. 8A and 8B, the image sensor 5 is mounted on the translucent glass substrate 1 in the same manner as in the fourth embodiment.

  Subsequently, in the step of injecting the insulating sealing resin 7 while performing ultraviolet irradiation, the mask 20 shown in FIG. 13 is used in order to secure the air vent groove 19 from the imaging region 6 shown in FIG. 12 to the outside. By forming the air vent groove 19 shown in FIG. 11, it is possible to take a method of curing the entire uncured sealing resin by heat treatment. In addition, the presence of the air vent groove 19 improves the injectability of the insulating sealing resin 7, and the effects of widening the selection of the material for the insulating sealing resin 7 and the selection of the material design can be achieved.

  The subsequent manufacturing method is the same as in the case of the fourth embodiment, and the same effect as the manufacturing method of the fourth embodiment can be obtained.

  In the embodiment of the present invention, a solid-state imaging device in which two imaging regions are integrated and formed on a semiconductor substrate has been described. However, three or more imaging regions are integrally formed on a semiconductor substrate. By applying the present invention also to a solid-state imaging device with improved imaging characteristics and improved added value, it is possible to obtain an individual imaging device with high accuracy and high reliability and a method for manufacturing the same.

  At this time, an electrode wiring pad may be formed around each imaging region to form a bump. When a large number of imaging regions are arranged, the electrode wiring pad forming region is adjusted as appropriate, and a plurality of imaging regions are formed. It is also possible to apply a method such as forming an electrode wiring pad every time.

  Moreover, in the said embodiment, although the glass substrate was used as a translucent board | substrate, you may use a resin-made translucent board | substrate, without being limited to glass.

  The solid-state imaging device and the manufacturing method thereof according to the present invention provide a solid-state imaging device having good imaging characteristics, high-precision ranging characteristics, high electrical connection reliability due to high strength, and a manufacturing method thereof This is a useful invention with high industrial applicability.

Partially exploded perspective view of the solid-state imaging device of Embodiment 1 Partial assembly diagram of solid-state imaging device according to Embodiment 1 Partially exploded perspective view of the solid-state imaging device of Embodiment 1 Assembly completed drawing of solid-state imaging device of Embodiment 1 Sectional drawing of the assembly completion figure of the solid-state imaging device of this Embodiment 1 Partially exploded perspective view of the solid-state imaging device of the second embodiment Partially exploded perspective view of the solid-state imaging device of Embodiment 3 Sectional drawing of the solid-state imaging device which shows the manufacturing method of the solid-state imaging device of this Embodiment 4 Sectional drawing of the solid-state imaging device which shows the manufacturing method of the solid-state imaging device of this Embodiment 4 Plane schematic diagram showing the method for manufacturing the solid-state imaging device of the fourth embodiment Plan view of a mask at the time of ultraviolet irradiation used in the manufacturing method of the solid-state imaging device of the fourth embodiment Plane schematic diagram sectional view showing the method for manufacturing the solid-state imaging device of the fifth embodiment Plan view of a mask at the time of ultraviolet irradiation used in the method for manufacturing the solid-state imaging device of the fifth embodiment Exploded perspective view of a conventional solid-state imaging device

Explanation of symbols

1 Translucent glass substrate 2 Through-hole
2A Cut 2B Concave groove 3, 4 Electrode pad 5 Solid-state imaging device 6 Imaging region 7 Insulating sealing resin
DESCRIPTION OF SYMBOLS 8 Solder ball 9 Printed wiring board 10 Underfill 11 Lens 12 Lens housing 13 Light shielding plate 14 Electrical connection part 15 Metal bump 16 Conductive adhesive 17, 20 Mask 18 Resin hardening part 19 Air vent groove

Claims (17)

An imaging element having a plurality of imaging regions formed at a predetermined interval on a single semiconductor substrate, and a translucent substrate having a wiring portion are formed by the imaging region and the translucent substrate. The imaging unit and the wiring unit are electrically connected via an electrical connection unit and the periphery of the electrical connection unit is surrounded by an insulating sealing resin so that the wiring units are opposed to each other. A solid-state imaging device,
A solid-state imaging device in which the translucent substrate has a through hole, a cut, or a concave groove so that the semiconductor substrate and the translucent substrate communicate with the outside. The solid-state imaging device according to claim 1,
The insulating sealing resin is a solid-state imaging device formed so as to avoid the imaging region. The solid-state imaging device according to claim 1 or 2,
The solid-state imaging device having two imaging regions. The solid-state imaging device according to any one of claims 1 to 3,
A solid-state imaging device in which the translucent substrate has a through-hole, a cut, or a groove in a region facing a portion between imaging regions sandwiched between two adjacent imaging regions in the imaging region. The solid-state imaging device according to any one of claims 1 to 4,
The translucent substrate is a glass substrate,
A solid-state imaging device in which an optical filter film is formed on the surface of the glass substrate. The solid-state imaging device according to any one of claims 1 to 4,
The translucent substrate is a glass substrate,
A solid-state imaging device in which an antireflection film is formed on the glass substrate surface. The solid-state imaging device according to any one of claims 1 to 6,
A solid-state imaging device in which the same number of lenses according to a plurality of spaced-apart imaging regions is installed in a casing disposed on the surface of the translucent substrate where the imaging element is not installed. The solid-state imaging device according to claim 7,
A solid-state imaging device in which two lenses are installed in the housing for two imaging regions. The solid-state imaging device according to any one of claims 1 to 8,
A solid-state imaging device including a lens barrel in which a distance between the lens and the imaging element is constant and a light shielding wall is provided to prevent light leakage between each pair of adjacent lenses and the imaging element. The solid-state imaging device according to any one of claims 1 to 9,
A solid-state imaging device in which electrical connection is made from the translucent substrate to the circuit board via the electrical connection portion. Forming a bump on a terminal portion of an image pickup device having a plurality of image pickup regions formed at a predetermined interval on a single semiconductor substrate; and
Supplying a conductive adhesive to the bump;
A step of providing a translucent substrate having a wiring portion and having a through hole, a cut, or a groove in a region corresponding to the imaging region;
The bumps to which the conductive adhesive is attached are mounted on a wiring portion formed on the light-transmitting substrate to form an electrical connection portion, and the imaging element and the light-transmitting substrate are integrated. Process,
Curing the conductive adhesive;
Injecting an insulating sealing resin around the conductive adhesive cured while irradiating only the imaging region with ultraviolet rays by a mask on the translucent substrate side;
And a step of curing the insulative sealing resin that has been injected and has not yet been cured. It is a manufacturing method of the solid-state image sensing device according to claim 11,
In the step of injecting the insulating sealing resin, the sealing resin that spreads in the imaging region by using an ultraviolet curable sealing resin and is cured by the irradiated ultraviolet light and cured around the imaging region is a dam shape. A method for manufacturing a solid-state imaging device formed on the substrate. It is a manufacturing method of the solid-state image sensing device according to claim 11 or 12,
In the step of injecting the insulating sealing resin, the insulating sealing resin is injected while bleeding air between the imaging element and the translucent glass substrate from a through hole, a notch, or a concave groove. Method for manufacturing a solid-state imaging device. It is a manufacturing method of the solid-state image sensing device according to any one of claims 11 to 13,
In the step of curing the uncured insulating sealing resin, the method of manufacturing a solid-state imaging device, wherein the mask is removed and the entire surface is irradiated with ultraviolet rays to cure the uncured insulating sealing resin. It is a manufacturing method of the solid-state image sensing device according to any one of claims 11 to 13,
A method for manufacturing a solid-state imaging device, wherein the uncured insulating sealing resin is cured by heat curing in the step of curing the uncured insulating sealing resin. It is a manufacturing method of the solid-state image sensing device according to any one of claims 11 to 15,
In the step of injecting the insulating sealing resin, the mask for ultraviolet irradiation is shaped to irradiate the imaging region and a part of the periphery of the imaging region, and forms a dam with a part of the periphery of the imaging region. Device manufacturing method. It is a manufacturing method of the solid-state image sensing device according to any one of claims 11 to 16,
A method of manufacturing a solid-state imaging device, wherein in the step of injecting the insulating sealing resin, a short amount of the insulating sealing resin is additionally injected from a through hole, a cut, or a concave groove after the injection is completed.

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