JP2010017808A - Polisher and polishing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a polisher and a polishing method, reducing a variation in polishing characteristics due to the uncertainty of fixing of abrasive grains by changing polishing conditions according to the measured results of the amount of the abrasive grains each time a predetermined quantity of sheets are polished. <P>SOLUTION: Since the measurement of the fixing distribution of abrasive grains by a polishing abrasive grain fixing amount measuring part 62, the calculation of the polishing conditions by a polishing condition calculation and setting part 53, and the feedback of the polishing conditions to a polishing unit are performed each time a predetermined quantity of sheets are polished, the polishing characteristics can be matched with high accuracy with a theoretical ones expressed by the Preston formula by reducing a variation in polishing characteristics which is produced during the polishing using abrasive grains due to the uncertainty of supply of the abrasive grains when the polishing is performed repeatedly. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a polishing apparatus and a polishing method.

An example of a polishing method for polishing the substrate surface is CMP (Chemical Mechanical Polishing). CMP is widely used for polishing a substrate such as a semiconductor wafer or a glass substrate as a technique for polishing a substrate surface with ultra-precision. In such a CMP apparatus that performs polishing processing by CMP, a polishing member such as a polishing pad mounted on a polishing head is pressed against a substrate held by a chuck and is rotated relative to the substrate to a contact portion between the substrate and the polishing member. Depending on the polishing content, a polishing solution such as a slurry (Slurry) containing pure grains as the main component and polishing agents for polishing the substrate is provided to cause chemical and mechanical polishing action. Then, the substrate surface is polished into a predetermined shape (see, for example, Patent Document 1).
JP 2006-319249 A

  However, when polishing is performed by supplying the polishing liquid to the polishing member, if the polishing is repeated, the fixing and dropping of the abrasive grains occur, and the fixing amount of the abrasive grains fixed on the polishing member fluctuates. There has been a problem that the polishing characteristics change each time polishing is performed with a change in the fixing amount of the abrasive grains.

  The present invention has been made in view of such problems, and changes the polishing conditions in accordance with the measurement result of the amount of abrasive grains every time a predetermined number of grains are polished, thereby resulting in uncertain fixation of abrasive grains. An object of the present invention is to provide a polishing apparatus and a polishing method that reduce changes in polishing characteristics.

  In order to achieve such an object, a polishing apparatus according to the present invention includes a holding mechanism that holds an object to be polished, a polishing member that polishes the object to be polished, and abrasive grains for polishing the polishing member. A polishing liquid supply device that supplies a polishing liquid, and a polishing driving mechanism that moves the polishing surface of the polishing member relative to the polishing target surface held by the holding member while pressing the polishing surface (for example, the pad rotation mechanism 20 in the embodiment). , A head moving mechanism 30), a polishing liquid supply by the polishing liquid supply device, and a control mechanism for controlling the pressing and relative movement of the polishing member against the object to be polished by the polishing driving mechanism. Then, by measuring the fixing distribution of the abrasive grains fixed on the polishing surface of the polishing member, the fixing distribution of the abrasive grains measured by the measuring unit, and by relatively moving the polishing member while pressing it against the object to be polished A calculation unit for calculating a polishing condition for polishing an object to be polished in relation to the polishing speed, and the control mechanism of the polishing member by the polishing driving mechanism based on the polishing condition calculated by the calculation unit. It is comprised so that the press with respect to a grinding | polishing target object and relative movement may be controlled.

  In addition, the polishing method according to the present invention supplies a polishing liquid containing abrasive grains for polishing, and moves the polishing surface of the polishing member while pressing the polishing surface of the polishing member against the surface to be polished. A polishing method for polishing a surface, comprising: a measuring step for measuring a fixing distribution of abrasive grains fixed on a polishing surface of a polishing member; a fixing distribution of abrasive grains measured in the measuring step; and a polishing surface of the polishing member. Based on the calculation step for calculating the polishing condition for polishing the polishing object, based on the polishing condition calculated in the calculation step, from the relationship with the polishing speed by moving it relative to the surface to be polished while being pressed against the surface to be polished A polishing step for controlling the pressing and relative movement of the polishing member against the object to be polished;

  In the polishing apparatus and the polishing method according to the present invention, the measurement of the fixing distribution of abrasive grains by the measurement unit, the calculation of the polishing conditions by the calculation unit, and the feedback of the polishing conditions to the polishing unit are performed each time a predetermined number of polishings are performed. Therefore, it is possible to reduce the change in the polishing characteristics due to the uncertain supply of the abrasive grains when repeatedly polishing, which occurs in the polishing process using the abrasive grains, and to agree with the theory represented by the Preston equation. Can be high.

  Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings. A schematic configuration of a polishing apparatus 1 to which the present invention is applied is shown in FIG. The polishing apparatus 1 includes a holding mechanism 10 that rotatably holds a wafer W such as a semiconductor, a pad rotating mechanism 20 that rotates a polishing head 21 on which the polishing pad 23 is mounted, and a polishing pad 23 that moves up and down relative to the wafer W. Further, a head moving mechanism 30 that relatively swings, and a polishing surface (surface) of the polishing pad 23 is supplied with a slurry containing polishing abrasives, a conditioner, etc. for polishing the wafer W mainly containing pure water. A slurry supply device 40 that controls the operation of the polishing device 1, such as rotation of the wafer W and the polishing pad 23, raising and lowering and swinging of the polishing pad 23 relative to the wafer W, and supply of slurry to the polishing processing unit, The measuring unit 60 is configured to measure the fixing amount of the abrasive grains distributed on the polishing surface of the polishing pad 23.

  The holding mechanism 10 includes a disc-shaped chuck 11, a spindle 14 extending vertically downward from the lower portion of the chuck 11, a chuck driving motor 15 that transmits a rotational driving force to the spindle 14 and rotates the chuck 11 in a horizontal plane, and the like. It is configured. The chuck 11 includes a chuck plate 12 formed in a disk shape with high flatness using a highly rigid material such as ceramic, and a suction pad 13 attached to the upper surface of the chuck plate 12. The chuck plate 12 is provided with a vacuum chuck structure for vacuum-sucking the lower surface of the wafer W so that the wafer W can be attached and detached. The chuck upper portion is exposed from the processing table T. The surface to be polished (that is, the surface to be polished) of the wafer W held by suction is held in an upward horizontal posture.

  A head moving mechanism 30 is provided adjacent to the holding mechanism 10, and the pad rotating mechanism 20 is provided at the tip of the polishing arm 32 constituting the head moving mechanism 30. The pad rotating mechanism 20 includes a disk-shaped polishing head 21, a spindle 24 extending vertically upward from the upper portion of the polishing head 21, and a pad driving motor that transmits the rotational driving force to the spindle 24 to rotate the polishing head 21 in a horizontal plane. 25 or the like.

  The polishing head 21 includes a polishing blade 22 formed in a disk shape with high flatness using the same high-rigidity material as the chuck 11 and a polishing pad 23 attached to the lower surface of the polishing plate 22. Is done. The polishing pad 23 is formed in an annular shape whose outer diameter is somewhat smaller (about 80 to 95%) than the diameter of the wafer W to be polished. For example, a hard polyurethane sheet having an independent firing structure is used. The polishing surface is attached to the lower surface of the polishing plate 22 and the polishing surface is held in a downward horizontal posture.

  A slurry supply structure for supplying the slurry supplied by the slurry supply device 40 to the center of the polishing pad 23 is provided in the center of the polishing head 21 so as to penetrate the center of the polishing plate 22 vertically. In addition, a so-called airbag-type pad pressurizing mechanism is provided in which air is supplied to a pressurization chamber formed inside the polishing head 21 to pressurize the polishing plate 22 downward. By controlling the pressure in the pressurizing chamber with the surface in contact with the surface to be polished of the wafer W, the contact pressure between the wafer W and the polishing pad 23, that is, the polishing pressure can be controlled.

  The head moving mechanism 30 horizontally swings the polishing arm 32 around a base 31 protruding upward from the processing table T, a polishing arm 32 extending horizontally from the base 31, and a swinging shaft extending vertically through the base 31. An arm swinging mechanism 35 to be moved and an arm lifting / lowering mechanism (not shown) for vertically moving the entire polishing arm 32 are configured. The pad rotation mechanism 20 described above is provided at the tip of the polishing arm 32. Yes. The head moving mechanism 30 is configured such that the holding mechanism 10 is positioned on the swing locus of the polishing head 21 when the polishing arm 32 is horizontally swinged by the arm swing mechanism 35. The entire polishing arm 32 is moved up and down in a state of being opposed to the wafer 11, and the polishing pad 23 can be horizontally swung with respect to the wafer W while the polishing surface of the polishing pad 23 is in contact with the surface to be polished of the wafer W. Is done.

The slurry supply device 40 supplies slurry, which is a polishing liquid, to the center of the polishing pad 23 via the slurry supply structure of the polishing head 21. The slurry contains pure water as a main component, and includes polishing abrasive grains (not shown) for polishing the wafer W, a regulator, and the like. Further, as the polishing abrasive materials, for example, ceria (CeO ₂₎ is used.

  The control device 50 outputs control signals to the holding mechanism 10, the pad rotation mechanism 20, the head moving mechanism 30, and the slurry supply device 40, respectively, to rotate the wafer W and the polishing pad 23, and to move the polishing pad 23 up and down relative to the wafer W. It is configured to control operation such as swinging.

  The measurement unit 60 includes a detector 61 and a polishing abrasive grain fixing amount measuring unit 62. The detector 61 is installed in the vicinity of the polishing surface of the polishing pad 23 and is fixed to the polishing pad 23. Measure the fixed amount of abrasive grains. As a measuring method for measuring the fixed amount of the abrasive grains, fluorescent X-ray analysis is used (detailed later). The abrasive grain fixing amount measuring unit 62 is electrically connected to the detector 61 and configured to measure the abrasive grain fixing distribution of the polishing pad 23 based on the fluorescent X-ray data detected by the detector 61. The

  Further, the control device 50 is electrically connected with a polishing condition calculation setting unit 53 and an input unit 54, and the polishing condition calculation setting unit 53 determines the distribution of polishing abrasive grain fixing distribution by the abrasive grain fixing amount measuring unit 62 described above. Polishing conditions are calculated based on the measurement results (detailed later). In the input unit 54, various commands and data input operations are performed.

  A method of polishing the wafer W using the polishing apparatus 1 configured as described above will be described below with reference to the flowchart shown in FIG. First, the slurry supply device 40 starts supplying the slurry to the polishing pad 23 (step S101). In this slurry supply step, the slurry supply device 40 starts supplying the slurry to the central portion of the polishing pad 23 via the slurry supply structure of the polishing head 21.

  After starting the supply of the slurry to the polishing pad 23 by the slurry supply device 40, the abrasive grains contained in the slurry are fixed on the polishing surface of the polishing pad 23 (step S102). In this slurry fixing step, the control device 50 swings the polishing arm 32 by the head moving mechanism 30 so that the polishing head 21 is positioned above the chuck 11 and rotates both the chuck 11 and the polishing head 21. Then, the polishing head 21 is lowered to the polishing position. At this time, a slurry fixing plate Wd made of quartz simulating the shape of the wafer W is adsorbed on the chuck 11, and the polishing surface of the polishing pad 23 is brought into contact with the surface of the slurry fixing plate Wd for sliding. Move. As a result, the slurry is supplied from the center of the polishing pad 23 between the polishing surface of the polishing pad 23 and the slurry fixing plate Wd.

  After fixing the abrasive grains contained in the slurry on the polishing surface of the polishing pad 23 in this way, the amount of the abrasive grains fixed on the polishing surface of the polishing pad 23 is measured by the fluorescent X-ray intensity of Ce (step) S103).

  A method for measuring the distribution of the abrasive grains fixed on the polishing surface of the polishing pad 23 in the above-described abrasive grain adhesion amount measuring step in step S103 will be described below. First, when X-rays are irradiated from the X-ray source toward the polishing surface of the polishing pad 23, fluorescent X-rays are emitted from the abrasive grains. The emitted fluorescent X-rays are detected by the detector 61, and the number of times the fluorescent X-rays are detected per second (unit: count / sec) is measured by the polishing abrasive-fixing-amount measuring unit 62 to determine the fixing abrasive amount. Is done. By rotating and turning the polishing head 21 and the polishing arm 32, the fixed amount of abrasive grains at each point of the polishing pad 23 is measured, and the fixed amount distribution of the abrasive grains is measured. After measuring the fixing amount of the abrasive grains on the polished surface in this way, the polishing condition calculating step is started (step S104). The polishing conditions are calculated by the following method.

  First, the polishing amount at the point i on the wafer W is expressed by Expression (1) by Preston's expression.

Here, V _i, k _i, P _i, v _i, t _i, respectively, in the i point on the wafer W, the polishing amount, Preston constant, polishing load, relative linear velocity is sliding time.

The Preston constant k _i is a constant that depends on the slurry to be used, the polishing pad 23, and the like. However, the present inventor considers that the amount of polishing abrasive grains fixed on the polishing pad is also a factor that affects the Preston constant. 1) was rewritten as equation (2).

Here, k ′ _i is a new Preston constant, and C _i is the fixed amount of abrasive grains on the polishing pad sliding on the point i on the wafer W.

For example, when the polishing is repeatedly performed, the state of the sliding interface between the polishing pad 23 and the wafer W changes, and accordingly, the abrasive grain fixing amount C _i on the polishing pad 23 sliding on the point i on the wafer W is also changed. Change. Therefore, in the polishing condition calculation step (step S104), in order to stabilize the polishing characteristics (polishing amount, polishing uniformity, etc.), the increase or decrease of the polishing abrasive grain fixing amount C _i in continuous execution of polishing or the like is increased on the wafer. The parameters P _i , v _i , t for keeping the polishing amount V _i constant by increasing / decreasing the polishing load P _i , the relative linear velocity v _i , and the sliding time t _i , which are parameters of the polishing amount V _i at point i in FIG. _i is calculated as a polishing condition.

Based on the parameters of the polishing conditions calculated by the polishing condition calculation setting unit 53 as described above, the control device 50 executes the polishing process as follows (step S105). For example, when the polishing load P _i and the sliding time t _i are constant (predetermined polishing load P, predetermined sliding time t) among the above three parameters P _i , v _i and t _i , the polishing pad 23 and the wafer Polishing is performed by changing only the rotation speed ratio of W and changing the relative linear velocity v _i . In this case, the polishing arm 32 is swung by the head moving mechanism 30 so that the relative linear velocity is v _i so that the polishing head 21 is positioned above the chuck 11, and both the chuck 11 and the polishing head 21 are moved. While rotating, the polishing head 21 is lowered to the polishing position to bring the polishing surface of the polishing pad 23 into contact with the surface to be polished of the wafer W. Then, the polishing pad 23 is pressed against the wafer W with a predetermined polishing load P by a pressurizing mechanism provided in the polishing head 21. At this time, the slurry supply mechanism 40 is used to supply the slurry from the center of the polishing pad 23 to the contact portion of the wafer W and the polishing pad 23 (the surface of the polishing pad 23), and polishing is performed based on the calculated parameters. Execute.

  After polishing the wafer W as described above, in the next step S106, it is determined whether or not a predetermined number of polishings are performed and the polishing is to be ended. If the determination is No, the processing from Step S103 to Step S105 is performed again. If the determination is Yes, the processing proceeds to Step S107, where the abrasive grains are detached from the polishing surface of the polishing pad 23, and the processing ends. .

  As described above, in this embodiment, for each polishing (every predetermined number), the fixed amount of abrasive grains is measured (step S103) and the polishing conditions are calculated (step S104), and then polishing is performed (step). Therefore, the variation in the polishing characteristics due to the uncertain supply of the abrasive grains, which occurs in the polishing process using the abrasive grains, is reduced, and the consistency with the theory expressed by the Preston equation can be increased.

  The inventor of the present application changes the polishing condition by the polishing condition calculation setting unit 53 every time a predetermined number of polishings are performed in accordance with the change in the fixed amount of polishing abrasive grains on the polishing surface of the polishing pad 23, Experiments are performed to reduce the change in polishing uniformity. The contents of the experiment are shown below.

  In the first experiment, the number of wafers W to be polished is 45, and the fixed amount of abrasive grains fixed on the polishing pad 23 is measured every eight wafers. The fixed amount of abrasive grains and the polishing pad 23 are measured. The polishing conditions were optimized so that a predetermined polishing amount V was obtained from the relationship with the polishing rate, and polishing was repeated.

  As a result of the above experiment, the graph of FIG. 3 was obtained. Here, the circles in FIG. 3 indicate the results when the polishing conditions are calculated for every 8 sheets and the polishing process is performed, and the triangles in FIG. 3 indicate the results when the polishing processes are performed without calculating the polishing conditions. Represents the polishing rate, and the white mark represents uniformity. From FIG. 3, regarding the result of the triangle mark in which the polishing was performed without calculating the polishing condition, the polishing speed and the uniformity varied each time the number of times was repeated, but for the result of the circle mark, the number of times was repeated. It can also be seen that there is no variation in polishing rate and uniformity. FIG. 4 is a graph showing the relationship between the fixed amount of polishing abrasive grains and the polishing rate at this time. It can be seen that the fixed amount of polishing abrasive grains and the polishing rate are in a substantially linear relationship.

In the second experiment, the polishing load P _i and the sliding time t _i are made constant (predetermined polishing load P, predetermined sliding time t), and the point i on the wafer W is slid before and after changing the polishing conditions. An example is shown in which the rocking conditions are constant so that the region of the polishing pad 23 does not change, only the rotation speed ratio between the polishing pad 23 and the wafer W is changed, and the polishing amount is controlled by the relative linear velocity v _i . In this experiment, the p-TEOS film formed on the Φ300 silicon wafer was polished, and attention was paid to the polishing rate in the region of Φ200 or less on the wafer.

  First, using the polishing pad 23 subjected to the slurry fixing treatment, the p-TEOS film formed on the silicon wafer was polished (reference polishing) under the following polishing conditions. The amount of polishing (polishing rate) on the same circumference was determined from the change in film thickness before and after polishing. The polishing conditions at this time are shown below (referred to as polishing conditions A).

Polishing pad rotation speed: 101 rpm
Wafer rotation speed: 100 rpm
Oscillation start position: polishing pad / wafer center distance 0 mm
Swing width: 25mm
Swing speed: 10mm / sec
Load: 3.0 psi
Polishing slurry: CeO ₂ polishing slurry Polishing slurry flow rate: 200 ml / min
Polishing time: 60 sec

When polishing was performed under the above conditions, the results shown in FIG. 5 were obtained for the relationship between the cumulative sliding time of the wafer W and the polishing pad radius. From this result, it can be seen that each point on the radius of the wafer W is slid by a specific point on the radius of the polishing pad 23. For example, when the fixed amount of abrasive grains on the polishing pad 23 is reduced in a certain region, the relative linear velocity v _i of the portion in which the region slides is set to make the polishing amount V constant with respect to the decreased amount. increase.

  FIG. 6 shows the in-plane distribution of the wafer W at the polishing rate in the reference polishing. The average polishing rate within the surface of the wafer W was 64.9 nm / min, and the polishing uniformity (1σ%) was 4.17%. Further, the amount of slurry fixed on the polishing pad by Ce fluorescent X-ray intensity at this time is shown in FIG. 7A, and the relationship between the relative linear velocity of the polishing pad 23 and the wafer W under the polishing condition A is shown in FIG. Shown in

  Next, the polishing (sample polishing) of the p-TEOS film formed on the silicon wafer is performed using the polishing pad 23 which is intentionally reduced in the slurry fixing amount by rinsing a part of the polishing pad with pure water. Do.

FIG. 8A shows the amount of slurry fixed on the polishing pad 23 after rinsing with pure water. In order to obtain polishing characteristics (polishing rate and uniformity) equivalent to the reference polishing using this polishing pad 23, it is necessary to increase the relative linear velocity v _i in accordance with a decrease in the amount of the fixed slurry. That is, the polishing amount at the point i on the wafer for reference polishing and sample polishing can be obtained by using the following formulas (3) and (4) to which the above formula (2) is applied.

In the above formulas (3) and (4), the subscript r indicates reference polishing, and s indicates sample polishing. In order to set Vr _i = Vs _i , assuming that kr ′ _i = ks ′ _i , the relative linear velocity vs _i in sample polishing may be changed so as to satisfy the following equation (5).

  FIG. 8B shows a case where the number of rotations of the polishing pad 23 is 89 rpm and the number of rotations of the wafer W is 80 rpm, which is obtained so as to satisfy Equation (5) in a range of ± 25% at each point on the wafer W. The relationship between the relative linear velocity of the polishing pad 23 and the wafer W is shown. Compared with the case of reference polishing, the relative linear velocity of the outer peripheral portion of the polishing pad where the slurry fixing amount is decreased by pure water rinsing is increased.

  FIG. 9 shows a case where polishing (sample polishing) of a p-TEOS film formed on a silicon wafer is performed by applying polishing conditions in which the relative linear velocity (the number of rotations of the polishing pad 23 and the wafer W) is changed. The distribution of the polishing rate within the wafer surface is shown. The average polishing rate in the wafer surface is 62.4 nm / min, the polishing uniformity (1σ%) is 5.30%, and the polishing characteristics are almost the same as the reference polishing without being affected by the fluctuation of the slurry fixing amount. As a result, the deviation from the Preston equation can be reduced.

In this experimental example, the polishing load and sliding time are made constant, and the oscillation conditions are made constant so that the region of the polishing pad sliding on the point i on the wafer does not change before and after changing the polishing conditions. In this example, only the pad / wafer rotational speed ratio is changed and the polishing amount is controlled by the relative linear velocity v _i .In actual application, the polishing pad area sliding on the point i on the wafer is shown. The rocking condition can also be changed by calculation.

As described above, in this embodiment, only the relative linear velocity v _i is set as a parameter to adjust the polishing amount V in the Preston equation, but the present invention is not limited to this, and the polishing load P _i , the sliding time is not limited thereto. t _i may be adjusted.

In the above-described embodiment, ceria (CeO ₂ ) is used as a material for the abrasive grains. However, the present invention is not limited to this. For example, as described above, silica (SiO ₂ ), alumina (Al ₂ O ₃ ) and zirconia (ZrO ₂ ) may be used.

  In the above-described embodiment, the slurry fixing plate Wd is prepared using quartz. However, the present invention is not limited to this, and a silicon wafer or a ceramic plate such as alumina or zirconia may be used.

1 is a schematic view of a polishing apparatus according to the present invention. 3 is a flowchart of a polishing method according to the present invention. It is the graph which showed the result of the comparative example which repeated grinding | polishing without optimizing, and the Example which optimized grinding | polishing conditions and repeated grinding | polishing in 45 continuous grinding | polishing. 3 is a graph showing the relationship between the amount of abrasive grains fixed on a polishing pad and the polishing rate of an object to be polished. 6 is a graph showing the relationship between the accumulated sliding time on the wafer and the radius of the polishing pad at an oscillation start position of 0 mm, a vibration width of 25 mm, a vibration speed of 10 mm / sec, and a polishing speed of 60 sec. It is the graph which showed distribution within a wafer surface of polish speed in reference polish. 5 is a graph showing the relationship between the amount of slurry fixed on a polishing pad and the average relative linear velocity measured by the fluorescent X-ray intensity of Ce under polishing conditions A. Polishing amount at a polishing pad rotational speed of 89 rpm and wafer rotational speed of 80 rpm determined so as to satisfy the formula (5) in a range of ± 25% at each point on the wafer after rinsing with pure water It is the graph which showed the relationship between the relative linear velocity of a pad and a wafer. Applying polishing conditions with different relative linear velocities (the number of rotations of the polishing pad and wafer) and polishing the p-TEOS film deposited on the silicon wafer (sample polishing) within the wafer surface It is the graph shown as distribution.

Explanation of symbols

W Wafer 1 Polishing device 10 Holding mechanism 21 Polishing head 23 Polishing pad (polishing member)
40 Slurry supply device (polishing liquid supply device) 50 Control device 53 Polishing condition calculation setting unit 60 Measuring unit 62 Abrasive grain fixing amount measuring unit

Claims (5)

A holding mechanism for holding an object to be polished;
A polishing member for polishing the polishing object;
A polishing liquid supply device for supplying a polishing liquid containing abrasive grains for polishing to the polishing member;
A polishing drive mechanism for relatively moving the polishing surface of the polishing member while pressing the polishing surface of the object to be polished held by the holding member;
In a polishing apparatus comprising: a polishing liquid supply by the polishing liquid supply apparatus; and a control mechanism for controlling the pressing and relative movement of the polishing member by the polishing driving mechanism with respect to the object to be polished;
A measurement unit for measuring a fixed distribution of the abrasive grains fixed on the polishing surface of the polishing member;
From the relationship between the distribution of fixing of the abrasive grains measured by the measurement unit and the polishing speed by moving the polishing member against the object to be polished, the polishing conditions for polishing the object to be polished are: A calculation unit for calculating,
The polishing apparatus, wherein the control mechanism controls pressing and relative movement of the polishing member with respect to the object to be polished by the polishing driving mechanism based on polishing conditions calculated by the calculation unit.   The polishing apparatus according to claim 1, wherein the measurement unit measures a fixed distribution of the abrasive grains fixed on the polishing surface of the polishing member by fluorescent X-ray measurement.   The measurement of the fixing distribution of the abrasive grains fixed on the polishing surface of the polishing member by the measurement unit and the calculation of the polishing condition by the calculation unit are performed every time a predetermined number of polishing objects are polished. The polishing apparatus according to claim 1, wherein the polishing apparatus is characterized.   The control mechanism includes, based on the polishing conditions calculated by the calculation unit, the polishing speed, a polishing pressure that presses the polishing surface of the polishing member against the surface to be polished of the polishing object, and polishing of the polishing member The polishing apparatus according to any one of claims 1 to 3, wherein a setting is made to change a sliding length of the relative movement while pressing a surface against a surface to be polished of the object to be polished. In a polishing method for supplying a polishing liquid containing abrasive grains for polishing and polishing the surface to be polished by relatively moving the polishing surface of the polishing member while pressing the surface to be polished of the object to be polished ,
A measuring step for measuring a fixing distribution of the abrasive grains fixed on the polishing surface of the polishing member;
From the relationship between the fixing distribution of the abrasive grains measured in the measurement step and the polishing rate by moving the polishing surface of the polishing member while pressing the polishing surface of the polishing object against the surface to be polished, the polishing object is A calculation step for calculating polishing conditions for polishing;
A polishing method comprising: a polishing step of controlling the pressing and relative movement of the polishing member to the object to be polished based on the polishing conditions calculated in the calculation step.

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