JP2010010558A - Light-emitting device, and method of manufacturing light-emitting device - Google Patents

Light-emitting device, and method of manufacturing light-emitting device Download PDF

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JP2010010558A
JP2010010558A JP2008170388A JP2008170388A JP2010010558A JP 2010010558 A JP2010010558 A JP 2010010558A JP 2008170388 A JP2008170388 A JP 2008170388A JP 2008170388 A JP2008170388 A JP 2008170388A JP 2010010558 A JP2010010558 A JP 2010010558A
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light emitting
wiring pattern
insulating layer
metal substrate
emitting element
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JP5408583B2 (en
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Shusaku Kin
周作 金
Katsuyuki Okimura
克行 沖村
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Hotalux Ltd
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NEC Lighting Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light-emitting device which can improve a breakdown voltage, and to provide a method of manufacturing the light-emitting device. <P>SOLUTION: The method of manufacturing the light-emitting device includes a preparation step, a wiring pattern forming step, a plating step, a removing step, and a light-emitting element mounting step. In the preparation step, a metal substrate 102 having an insulating layer 103 formed on one surface is prepared, wherein the insulating layer 103 is in contact with at least an end side of the metal substrate. In the wiring pattern forming step, a wiring pattern 104 of which one end extends to the end side of the insulating layer 103 is formed on a surface opposite to the metal substrate 102 of the insulating layer 103. In the plating step, plating metal is formed on a surface of the wiring pattern 104 by an electrolytic plating method. In the removing step, one end side of the wiring pattern 104 is removed so that a shortest distance from one end of the wiring pattern 104 to an end surface of the metal substrate 102 through a surface of the insulating layer 103 becomes longer than a thickness of the insulating layer 103. In the light-emitting element mounting step, the light-emitting element is mounted and the light-emitting element and the wiring pattern 104 are electrically connected. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は発光素子が搭載された金属基板を有する発光装置、及び発光装置の製造方法に関する。   The present invention relates to a light emitting device having a metal substrate on which a light emitting element is mounted, and a method for manufacturing the light emitting device.

発光素子を有する発光装置では、発光素子の発光とともに熱が発生する。この熱によって、発光素子の発光効率や寿命は低下する。特に、発光素子が発光ダイオード（ＬＥＤ）である場合、発熱による発光効率の低下、及び寿命の低下は顕著である。   In a light-emitting device having a light-emitting element, heat is generated as the light-emitting element emits light. This heat reduces the light emission efficiency and life of the light emitting element. In particular, when the light-emitting element is a light-emitting diode (LED), a decrease in light emission efficiency and a decrease in life due to heat generation are significant.

したがって、発光時の熱を効率よく放熱することが重要である。放熱の効果を上げる一手段として、金属基板に発光素子を配置する手段がある（例えば、特許文献１〜３参照。）。金属基板は熱伝導率が高いため、放熱性に長けている。   Therefore, it is important to efficiently dissipate heat during light emission. As a means for improving the heat dissipation effect, there is a means for arranging a light emitting element on a metal substrate (see, for example, Patent Documents 1 to 3). Since the metal substrate has a high thermal conductivity, it is excellent in heat dissipation.

金属基板を用いた発光装置では、一般に、金属基板の一面に絶縁層が形成されており、当該絶縁層の表面に配線パターンが形成されている。発光素子は、この配線パターンに電気的に接続されている。   In a light emitting device using a metal substrate, an insulating layer is generally formed on one surface of the metal substrate, and a wiring pattern is formed on the surface of the insulating layer. The light emitting element is electrically connected to this wiring pattern.

発光素子と配線パターンとを電気的に接続する手段として、導電性のワイヤを用いて結線する手段（ワイヤボンディング）が挙げられる。ワイヤボンディングによって、発光素子と配線パターンとを電気的に接続するためには、配線パターンの表面に、導電性のワイヤと容易に溶着可能な金属を形成しておくことが好ましい。配線パターンの表面の金属は、めっき法によって容易に形成することができる（特許文献１及び２参照。）。   Examples of means for electrically connecting the light emitting element and the wiring pattern include means for connecting using a conductive wire (wire bonding). In order to electrically connect the light emitting element and the wiring pattern by wire bonding, it is preferable to form a metal that can be easily welded to the conductive wire on the surface of the wiring pattern. The metal on the surface of the wiring pattern can be easily formed by a plating method (see Patent Documents 1 and 2).

特許文献３では、ＬＥＤが接続されるパターン配線が形成される絶縁基材の外形を、金属基板の外形よりも大きくすることが記載されている。これにより、金属基板の端面から絶縁基材の表面を経て配線パターンに到達するまでの最短距離（絶縁距離）を長くすることができる。
特開２００３−３０９２９２号公報 特開２００５−５０８３８号公報 特開２００４−２００２０７号公報 Patent Document 3 describes that the outer shape of the insulating base material on which the pattern wiring to which the LED is connected is formed is larger than the outer shape of the metal substrate. Thereby, the shortest distance (insulation distance) from the end face of the metal substrate to the wiring pattern through the surface of the insulating base can be increased.
JP 2003-309292 A JP 2005-50838 A JP 2004-200207 A

特許文献１及び２に記載の発光装置では、配線パターンの表面にめっき金属が形成されている。めっき金属は電解めっき法を用いることで容易に形成することができる。電解めっき法を実施する際に、配線パターンに電流を供給する。そのため、配線パターンの一端は、通常、絶縁層の端辺まで延びている。   In the light emitting devices described in Patent Documents 1 and 2, a plated metal is formed on the surface of the wiring pattern. The plated metal can be easily formed by using an electrolytic plating method. When performing the electrolytic plating method, a current is supplied to the wiring pattern. Therefore, one end of the wiring pattern usually extends to the end side of the insulating layer.

したがって、電解めっき法でめっき金属を形成する場合、配線パターンの一端から絶縁層の表面を経て金属基板に達するまでの最短距離（絶縁距離）は、絶縁層の厚みと等しくなる。このように絶縁距離が短いと、発光装置の耐電圧が低下するという問題がある。   Therefore, when forming the plating metal by the electrolytic plating method, the shortest distance (insulation distance) from one end of the wiring pattern to the metal substrate through the surface of the insulating layer is equal to the thickness of the insulating layer. Thus, when the insulation distance is short, there is a problem that the withstand voltage of the light emitting device is lowered.

また、特許文献３に記載の発光装置においても、仮に、配線パターンの表面に電解めっき法でめっき金属を形成する場合には、一端が絶縁基材の端辺まで延びている配線パターンが必要である。この場合、金属基板と配線パターンとの絶縁距離は短くなり、発光装置の耐電圧は低下する。   Also, in the light emitting device described in Patent Document 3, if a plated metal is formed on the surface of the wiring pattern by an electrolytic plating method, a wiring pattern in which one end extends to the edge of the insulating base material is necessary. is there. In this case, the insulation distance between the metal substrate and the wiring pattern is shortened, and the withstand voltage of the light emitting device is reduced.

本発明の目的は上記背景技術の課題に鑑み、耐電圧が向上する発光装置、及びその発光装置の製造方法を提供することである。   An object of the present invention is to provide a light-emitting device with improved withstand voltage and a method for manufacturing the light-emitting device in view of the problems of the background art.

上記目的を達成するため本発明は、発光素子が搭載された金属基板を有する発光装置の製造方法であって、準備工程と、配線パターン形成工程と、めっき工程と、除去工程と、発光素子搭載工程と、を有している。準備工程では、一面に絶縁層が形成された金属基板であって、該金属基板の少なくとも端辺に絶縁層の端辺が接している金属基板を準備する。配線パターン形成工程では、絶縁層の金属基板と反対側の面に、一端が絶縁層の端辺まで延びている配線パターンを形成する。めっき工程では、電解めっき法によって、配線パターンの表面にめっき金属を形成する。除去工程では、配線パターンの一端から絶縁層の表面を経て金属基板の端面に到達するまでの最短距離が絶縁層の厚みよりも長くなるように、配線パターンの一端側を除去する。発光素子搭載工程では、発光素子を搭載し、発光素子と配線パターンとを、電気的に接続する。   In order to achieve the above object, the present invention is a method of manufacturing a light emitting device having a metal substrate on which a light emitting element is mounted, comprising a preparation step, a wiring pattern forming step, a plating step, a removing step, and a light emitting device mounting. And a process. In the preparation step, a metal substrate having an insulating layer formed on one surface and having an edge of the insulating layer in contact with at least an edge of the metal substrate is prepared. In the wiring pattern forming step, a wiring pattern having one end extending to the edge of the insulating layer is formed on the surface of the insulating layer opposite to the metal substrate. In the plating step, a plating metal is formed on the surface of the wiring pattern by electrolytic plating. In the removing step, one end side of the wiring pattern is removed so that the shortest distance from one end of the wiring pattern to the end surface of the metal substrate through the surface of the insulating layer is longer than the thickness of the insulating layer. In the light emitting element mounting step, the light emitting element is mounted, and the light emitting element and the wiring pattern are electrically connected.

また、本発明の発光装置は、一面に絶縁層が形成された金属基板であって、該金属基板の少なくとも端辺に前記絶縁層の端辺が接している金属基板と、絶縁層の金属基板と反対側の面に形成された配線パターンと、配線パターンに接続された発光素子と、を備えている。配線パターンの表面には、電解めっき法によるめっき金属が形成されている。そして、配線パターンの一端から絶縁層の表面を経て金属基板の端面に到達するまでの最短距離が絶縁層の厚みよりも長いことを特徴とする。   The light-emitting device of the present invention is a metal substrate having an insulating layer formed on one surface, the metal substrate having at least the edge of the metal substrate in contact with the end of the insulating layer, and the metal substrate of the insulating layer. And a light emitting element connected to the wiring pattern. On the surface of the wiring pattern, a plating metal is formed by an electrolytic plating method. The shortest distance from one end of the wiring pattern to the end surface of the metal substrate through the surface of the insulating layer is longer than the thickness of the insulating layer.

本発明によれば、発光装置の耐電圧を向上させることができる。   According to the present invention, the withstand voltage of the light emitting device can be improved.

以下、本発明の実施形態について図面を参照して説明する。   Embodiments of the present invention will be described below with reference to the drawings.

図１は、本発明の一実施形態に係る発光装置の模式的断面図である。本実施形態に係る発光装置は、発光素子１０１と金属基板１０２とを有している。発光素子１０１としては、例えば発光ダイオード（ＬＥＤ）を好適に用いることができる。   FIG. 1 is a schematic cross-sectional view of a light emitting device according to an embodiment of the present invention. The light emitting device according to this embodiment includes a light emitting element 101 and a metal substrate 102. As the light emitting element 101, for example, a light emitting diode (LED) can be suitably used.

金属基板１０２の一面には絶縁層１０３が形成されている。絶縁層１０３の端辺は、金属基板１０２の少なくとも端辺に接している。絶縁層１０３は開口部１０３ｂを有しており、開口部１０３ｂから金属基板１０２の一部が露出している。   An insulating layer 103 is formed on one surface of the metal substrate 102. The end side of the insulating layer 103 is in contact with at least the end side of the metal substrate 102. The insulating layer 103 has an opening 103b, and a part of the metal substrate 102 is exposed from the opening 103b.

発光素子１０１は、この開口部１０３ｂから露出している金属基板１０２に配置されている。金属基板１０２は、発光素子１０１の発熱を効果的に放熱することができれば、どのような金属であっても良い。   The light emitting element 101 is disposed on the metal substrate 102 exposed from the opening 103b. The metal substrate 102 may be any metal as long as it can effectively dissipate heat generated by the light emitting element 101.

絶縁層１０３の金属基板１０２と反対側の面には、配線パターン１０４が形成されている。発光素子１０１は、導電性のワイヤ１０５によって、配線パターン１０４と接続されている。また、配線パターン１０４の表面には、めっき金属（不図示）が電解めっき法によって形成されている。めっき金属は、ワイヤ１０５を溶着するために形成されている。   A wiring pattern 104 is formed on the surface of the insulating layer 103 opposite to the metal substrate 102. The light emitting element 101 is connected to the wiring pattern 104 by a conductive wire 105. Further, a plating metal (not shown) is formed on the surface of the wiring pattern 104 by an electrolytic plating method. The plated metal is formed for welding the wire 105.

本実施例における発光装置では、配線パターン１０４の一端が絶縁層１０３の端辺１０３ａまで延びていない。   In the light emitting device in this embodiment, one end of the wiring pattern 104 does not extend to the end side 103 a of the insulating layer 103.

本構成によれば、配線パターン１０４の一端が絶縁層１０３の表面を経て金属基板１０２の端面１０２ａに到達するまでの最短距離（以下、絶縁距離と呼ぶ。）が絶縁層１０３の厚みよりも長くなる。このように、絶縁距離が長くなるため、発光装置の耐電圧は向上し、それによって発光装置の信頼性が向上する。   According to this configuration, the shortest distance (hereinafter referred to as an insulation distance) until one end of the wiring pattern 104 reaches the end surface 102 a of the metal substrate 102 through the surface of the insulating layer 103 is longer than the thickness of the insulating layer 103. Become. Thus, since the insulation distance becomes long, the withstand voltage of the light emitting device is improved, thereby improving the reliability of the light emitting device.

さらに、発光素子１０１とワイヤ１０５は、樹脂（不図示）で封止されていることが好ましい。これにより、発光素子１０１を保護し、発光素子１０１の光利用効率を向上することができる。また、発光素子１０１に電力を供給するための電源（不図示）は、配線パターン１０４に電気的に接続されている。   Furthermore, the light emitting element 101 and the wire 105 are preferably sealed with a resin (not shown). Thereby, the light emitting element 101 can be protected and the light utilization efficiency of the light emitting element 101 can be improved. A power source (not shown) for supplying power to the light emitting element 101 is electrically connected to the wiring pattern 104.

次に、本発明の一実施形態に係る発光装置の製造方法について説明する。図２（ａ）〜（ｄ）は、本実施形態に係る発光装置の製造方法を説明する工程図である。   Next, a method for manufacturing a light emitting device according to an embodiment of the present invention will be described. 2A to 2D are process diagrams illustrating a method for manufacturing a light emitting device according to this embodiment.

発光装置の製造方法は、準備工程と、配線パターン形成工程と、めっき工程と、除去工程と、発光素子搭載工程と、を有している。   The method for manufacturing a light emitting device includes a preparation process, a wiring pattern forming process, a plating process, a removing process, and a light emitting element mounting process.

準備工程では、一面に絶縁層１０３が形成された金属基板１０２を準備する。金属基板１０２の少なくとも端辺に絶縁層１０３の端辺が接している（図２（ａ）参照。）。
絶縁層１０３としては、プリプレグ、ガラスエポキシ板、セラミックなどを用いることができる。絶縁層１０３としてガラスエポキシ板を用いる場合、ガラスエポキシ板は、接着剤によって金属基板１０２に接着することができる。 In the preparation step, a metal substrate 102 having an insulating layer 103 formed on one surface is prepared. The end side of the insulating layer 103 is in contact with at least the end side of the metal substrate 102 (see FIG. 2A).
As the insulating layer 103, a prepreg, a glass epoxy plate, ceramic, or the like can be used. When a glass epoxy plate is used as the insulating layer 103, the glass epoxy plate can be bonded to the metal substrate 102 with an adhesive.

絶縁層１０３は、金属基板１０２の一部が露出するように、開口部１０３ｂを有していることが好ましい。この場合、開口部１０３ｂから露出している金属基板１０２に、発光素子を配置することができるため、発光素子の放熱性が向上する。   The insulating layer 103 preferably has an opening 103b so that a part of the metal substrate 102 is exposed. In this case, since the light emitting element can be disposed on the metal substrate 102 exposed from the opening 103b, heat dissipation of the light emitting element is improved.

配線パターン形成工程では、一端が絶縁層１０３の端辺１０３ａまで延びている配線パターン１０４を、絶縁層１０３の金属基板１０２と反対側の面に形成する（図２（ｂ）参照。）。配線パターン１０４は、発光素子１０１に電力を供給するための配線である。   In the wiring pattern forming step, a wiring pattern 104 having one end extending to the end side 103a of the insulating layer 103 is formed on the surface of the insulating layer 103 opposite to the metal substrate 102 (see FIG. 2B). The wiring pattern 104 is a wiring for supplying power to the light emitting element 101.

配線パターン１０４は、電気伝導性が高い材料から構成されていれば良い。一般的には、配線パターン１０４は銅（Ｃｕ）から構成される。配線パターン１０４は任意の公知技術を利用して形成することができる。その一例として、フォトリゾグラフィー法を挙げることが出来る。   The wiring pattern 104 should just be comprised from the material with high electrical conductivity. In general, the wiring pattern 104 is made of copper (Cu). The wiring pattern 104 can be formed using any known technique. One example is a photolithographic method.

めっき工程では、電解めっき法によって配線パターン１０４の表面にめっき金属（不図示）を形成する。このとき、金属イオンを含む溶液中で、一端が絶縁層１０３の端辺１０３ａまで延びている配線パターン１０４に電流を供給することで、配線パターン１０４の表面にめっき金属を形成することができる。めっき金属は、後述のワイヤ１０５を溶着させて、配線パターン１０４と接続するために形成する。   In the plating step, a plating metal (not shown) is formed on the surface of the wiring pattern 104 by an electrolytic plating method. At this time, a plating metal can be formed on the surface of the wiring pattern 104 by supplying a current to the wiring pattern 104 having one end extending to the end side 103 a of the insulating layer 103 in a solution containing metal ions. The plated metal is formed in order to connect the wiring pattern 104 by welding a wire 105 described later.

また、絶縁層１０３の開口部１０３ｂから露出した金属基板１０２に発光素子１０１を搭載する場合、めっき工程において、開口部１０３ｂから露出している金属基板１０２にもめっき金属を形成することが好ましい。これにより、めっき金属に発光素子１０１を溶着することで、容易に発光素子１０１を搭載することができる。   In the case where the light emitting element 101 is mounted on the metal substrate 102 exposed from the opening 103b of the insulating layer 103, it is preferable to form a plating metal on the metal substrate 102 exposed from the opening 103b in the plating step. Thereby, the light emitting element 101 can be easily mounted by welding the light emitting element 101 to the plating metal.

めっき金属の金属種としては、金（Ａｕ）、銀（Ａｇ）、ニッケル（Ｎｉ）などを用いることができる。めっき金属の金属種は、溶着する金属の種類に応じて、適宜決めれば良い。   Gold (Au), silver (Ag), nickel (Ni), etc. can be used as the metal species of the plating metal. What is necessary is just to determine the metal seed | species of a plating metal suitably according to the kind of metal to weld.

除去工程では、絶縁層１０３の端辺１０３ａまで延びている配線パターン１０４ａの一端側を、エッチングにより除去する（図２（ｃ）参照。）。   In the removing step, one end side of the wiring pattern 104a extending to the end side 103a of the insulating layer 103 is removed by etching (see FIG. 2C).

除去工程の一例として、絶縁層１０３に耐エッチング性を有するマスクを形成し、配線パターン１０４の一端から絶縁層１０３の表面を経て金属基板１０２の端面１０２ａに到達するまでの最短距離が絶縁層１０３の厚みよりも長くなるように、配線パターン１０４の一端側をエッチング液によって除去する。つまり、配線パターン１０４が絶縁層１０３の端辺１０３ａに到達しないように、配線パターン１０４を形成する。   As an example of the removal process, a mask having etching resistance is formed on the insulating layer 103, and the shortest distance from one end of the wiring pattern 104 to the end surface 102 a of the metal substrate 102 through the surface of the insulating layer 103 is the insulating layer 103. One end side of the wiring pattern 104 is removed with an etching solution so as to be longer than the thickness of the wiring pattern 104. That is, the wiring pattern 104 is formed so that the wiring pattern 104 does not reach the end side 103 a of the insulating layer 103.

エッチング液はエッチングで除去する材質によって決定する。例えば、配線パターン１０４が銅（Ｃｕ）から成る場合、エッチング液としては、塩化鉄水溶液や塩化銅水溶液などを用いることができる。また、マスクとしては、フォトレジストを用いることができる。フォトレジストはネガ型、ポジ型のどちらであって良い。   The etchant is determined by the material to be removed by etching. For example, when the wiring pattern 104 is made of copper (Cu), an iron chloride aqueous solution, a copper chloride aqueous solution, or the like can be used as the etching solution. Further, a photoresist can be used as the mask. The photoresist may be either a negative type or a positive type.

このように、絶縁層１０３の端辺１０３ａ近傍に位置している配線パターン１０４を除去することで、絶縁距離が長くなるため、発光装置の耐電圧は向上する。したがって、発光装置の信頼性は向上する。   In this manner, by removing the wiring pattern 104 located in the vicinity of the end side 103a of the insulating layer 103, the insulation distance is increased, so that the withstand voltage of the light emitting device is improved. Therefore, the reliability of the light emitting device is improved.

発光素子搭載工程では、発光素子１０１を、ワイヤボンディングによって、配線パターン１０４と電気的に接続する（図２（ｄ）参照。）。このとき、配線パターン１０４の表面に形成されているめっき金属を、熱や超音波によって溶解させて、導電性のワイヤ１０５を溶着させる。   In the light emitting element mounting step, the light emitting element 101 is electrically connected to the wiring pattern 104 by wire bonding (see FIG. 2D). At this time, the plating metal formed on the surface of the wiring pattern 104 is melted by heat or ultrasonic waves to weld the conductive wire 105.

このようにして、耐電圧を向上させた発光装置を製造することができる。発光素子１０１と配線パターン１０４とを接続するワイヤ１０５は、例えばＡｕやＡｌなどの導電性の材料から構成される。   In this manner, a light emitting device with improved withstand voltage can be manufactured. The wire 105 that connects the light emitting element 101 and the wiring pattern 104 is made of a conductive material such as Au or Al.

発光素子１０１は、金属基板１０２上に搭載されることが好ましい。具体的には、絶縁層１０３の開口部１０３ｂから露出している金属基板１０２に、発光素子１０１を配置することが好ましい。これにより、発光素子１０１が発生する熱を効果的に放熱することができる。   The light emitting element 101 is preferably mounted on the metal substrate 102. Specifically, the light-emitting element 101 is preferably disposed on the metal substrate 102 exposed from the opening 103b of the insulating layer 103. Thereby, the heat generated by the light emitting element 101 can be effectively radiated.

また、発光素子１０１とワイヤ１０５とを、樹脂（不図示）で封止しても良い。これにより、発光素子１０１を保護し、発光素子１０１の光利用効率を向上することができる。   Further, the light emitting element 101 and the wire 105 may be sealed with a resin (not shown). Thereby, the light emitting element 101 can be protected and the light utilization efficiency of the light emitting element 101 can be improved.

金属基板１０２に搭載される発光素子１０１は１つに限らず、複数であっても良い。また、発光素子１０１を金属基板１０２に搭載する方法や位置などは、上記構成によらず、種々変更可能である。   The number of light-emitting elements 101 mounted on the metal substrate 102 is not limited to one, and may be plural. Further, the method and position of mounting the light emitting element 101 on the metal substrate 102 can be variously changed regardless of the above configuration.

以上、本発明の望ましい実施形態について提示し、詳細に説明したが、本発明は上記実施形態に限定されるものではなく、要旨を逸脱しない限り、さまざまな変更及び修正が可能であることを理解されたい。   Although the preferred embodiments of the present invention have been presented and described in detail above, the present invention is not limited to the above-described embodiments, and it is understood that various changes and modifications can be made without departing from the gist. I want to be.

本発明の一実施形態に係る発光装置の模式的断面図。1 is a schematic cross-sectional view of a light emitting device according to an embodiment of the present invention. （ａ）〜（ｄ）は、本発明の一実施形態に係る発光装置の製造方法を説明する工程図である。(A)-(d) is process drawing explaining the manufacturing method of the light-emitting device which concerns on one Embodiment of this invention.

符号の説明Explanation of symbols

１０１ 発光素子
１０２ 金属基板
１０２ａ 端面
１０３ 絶縁層
１０３ａ 端辺
１０３ｂ 開口部
１０４ 配線パターン
１０５ ワイヤ DESCRIPTION OF SYMBOLS 101 Light emitting element 102 Metal substrate 102a End surface 103 Insulating layer 103a End side 103b Opening part 104 Wiring pattern 105 Wire

Claims (10)

発光素子が搭載された金属基板を有する発光装置の製造方法であって、
一面に絶縁層が形成された金属基板であって、該金属基板の少なくとも端辺に前記絶縁層の端辺が接している前記金属基板を準備する準備工程と、
前記絶縁層の前記金属基板と反対側の面に、一端が前記絶縁層の端辺まで延びている配線パターンを形成する配線パターン形成工程と、
電解めっき法によって、前記配線パターンの表面にめっき金属を形成するめっき工程と、
前記配線パターンの一端から前記絶縁層の表面を経て前記金属基板の端面に到達するまでの最短距離が前記絶縁層の厚みよりも長くなるように、前記配線パターンの一端側を除去する除去工程と、
前記発光素子を搭載し、前記発光素子と前記配線パターンとを、電気的に接続する発光素子搭載工程と、を有する発光装置の製造方法。 A method of manufacturing a light emitting device having a metal substrate on which a light emitting element is mounted,
A preparation step of preparing a metal substrate having an insulating layer formed on one surface, wherein the metal substrate is in contact with at least an edge of the metal substrate;
A wiring pattern forming step of forming a wiring pattern having one end extending to an end side of the insulating layer on the surface of the insulating layer opposite to the metal substrate;
A plating step of forming a plating metal on the surface of the wiring pattern by electrolytic plating;
A removing step of removing one end side of the wiring pattern so that the shortest distance from one end of the wiring pattern to the end surface of the metal substrate through the surface of the insulating layer is longer than the thickness of the insulating layer; ,
A method for manufacturing a light emitting device, comprising: mounting the light emitting element; and a step of mounting the light emitting element to electrically connect the light emitting element and the wiring pattern. 前記除去工程において、前記配線パターンの前記一端が前記絶縁層の前記端辺に到達しないように、前記配線パターンを形成する、請求項１に記載の発光装置の製造方法。   The method for manufacturing a light emitting device according to claim 1, wherein in the removing step, the wiring pattern is formed so that the one end of the wiring pattern does not reach the end side of the insulating layer. 前記除去工程において、エッチングによって前記配線パターンの前記一端側を除去する、請求項１または２に記載の発光装置の製造方法。   The method for manufacturing a light emitting device according to claim 1, wherein in the removing step, the one end side of the wiring pattern is removed by etching. 前記発光素子搭載工程において、ワイヤボンディングによって、前記発光素子と前記配線パターンとを電気的に接続する、請求項１から３のいずれか１項に記載の発光装置の製造方法。   4. The method of manufacturing a light emitting device according to claim 1, wherein in the light emitting element mounting step, the light emitting element and the wiring pattern are electrically connected by wire bonding. 5. 前記金属基板の一部が露出するように、前記絶縁層は開口部を有しており、
前記発光素子搭載工程において、前記開口部から露出している前記金属基板に前記発光素子を配置する、請求項１から４のいずれか１項に記載の発光装置の製造方法。 The insulating layer has an opening so that a part of the metal substrate is exposed,
5. The method for manufacturing a light emitting device according to claim 1, wherein, in the light emitting element mounting step, the light emitting element is arranged on the metal substrate exposed from the opening. 前記発光素子が発光ダイオードであることを特徴とする、請求項１から５のいずれか１項に記載の発光装置の製造方法。   The method of manufacturing a light emitting device according to claim 1, wherein the light emitting element is a light emitting diode. 一面に絶縁層が形成された金属基板であって、該金属基板の少なくとも端辺に前記絶縁層の端辺が接している前記金属基板と、前記絶縁層の前記金属基板と反対側の面に形成された配線パターンと、前記配線パターンに接続された発光素子と、を備え、前記配線パターンの表面に電解めっき法によるめっき金属が形成されている発光装置において、
前記配線パターンの一端から前記絶縁層の表面を経て前記金属基板の端面に到達するまでの最短距離が前記絶縁層の厚みよりも長いことを特徴とする、発光装置。 A metal substrate having an insulating layer formed on one surface thereof, wherein the metal substrate is in contact with at least an edge of the metal substrate, and the surface of the insulating layer opposite to the metal substrate; In a light emitting device comprising a formed wiring pattern and a light emitting element connected to the wiring pattern, wherein a plating metal is formed on the surface of the wiring pattern by an electrolytic plating method,
The light emitting device characterized in that the shortest distance from one end of the wiring pattern to the end surface of the metal substrate through the surface of the insulating layer is longer than the thickness of the insulating layer. 前記配線パターンは、該配線パターンの前記一端が前記絶縁層の前記端辺に到達しないように形成されていることを特徴とする、請求項７に記載の発光装置。   The light emitting device according to claim 7, wherein the wiring pattern is formed so that the one end of the wiring pattern does not reach the end side of the insulating layer. 前記金属基板の一部が露出するように、前記絶縁層は開口部を有しており、
前記開口部から露出している前記金属基板に前記発光素子が配置されていることを特徴とする、請求項７または８に記載の発光装置。 The insulating layer has an opening so that a part of the metal substrate is exposed,
The light emitting device according to claim 7, wherein the light emitting element is disposed on the metal substrate exposed from the opening. 前記発光素子が発光ダイオードであることを特徴とする、請求項７から９のいずれか１項に記載の発光装置。   The light-emitting device according to claim 7, wherein the light-emitting element is a light-emitting diode.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012004595A (en) * 2011-09-21 2012-01-05 Toshiba Corp Method of manufacturing light-emitting element module substrate
KR101773045B1 (en) * 2011-01-21 2017-08-30 삼성전자 주식회사 Metal substrate and manufacturing method pf the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003030274A1 (en) * 2001-09-27 2003-04-10 Nichia Corporation Light-emitting device and its manufacturing method
JP2003309292A (en) * 2002-04-15 2003-10-31 Citizen Electronics Co Ltd Metal core substrate of surface mounting light emitting diode and its manufacturing method
JP2005050838A (en) * 2003-07-29 2005-02-24 Citizen Electronics Co Ltd Surface mounted led and light emitting device employing it
JP2005243744A (en) * 2004-02-24 2005-09-08 Matsushita Electric Works Ltd Printed board for mounting led, and its manufacturing method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003030274A1 (en) * 2001-09-27 2003-04-10 Nichia Corporation Light-emitting device and its manufacturing method
JP2003309292A (en) * 2002-04-15 2003-10-31 Citizen Electronics Co Ltd Metal core substrate of surface mounting light emitting diode and its manufacturing method
JP2005050838A (en) * 2003-07-29 2005-02-24 Citizen Electronics Co Ltd Surface mounted led and light emitting device employing it
JP2005243744A (en) * 2004-02-24 2005-09-08 Matsushita Electric Works Ltd Printed board for mounting led, and its manufacturing method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101773045B1 (en) * 2011-01-21 2017-08-30 삼성전자 주식회사 Metal substrate and manufacturing method pf the same
JP2012004595A (en) * 2011-09-21 2012-01-05 Toshiba Corp Method of manufacturing light-emitting element module substrate

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