JP2010010020A - Light emitting device, and method for thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To inexpensively obtain a light emitting device can display a color image without using a color filter. <P>SOLUTION: The light emitting device includes three kinds of light emitting pixels 20, namely, red, green and blue light emitting pixels 20R, 20G and 20B provided on each of a plurality of light emitting regions 19 that are regularly arranged on a substrate 10. Each of the three kinds of light emitting pixels 20 is formed as a lamination by laying a light reflective layer or semi-reflective layer 21, a transparent resin layer 79, a first electrode 25 having transparent conductivity, a light emitting function layer 26, and a second electrode 27 having a light reflective or semi-reflective characteristic one on top of another in this order from the substrate 10 side. The transparent resin layer 79 is a colored transparent resin layer 79 colored with a color corresponding to the light emission color of each of the light emitting pixels 20. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a light emitting device and a method for manufacturing the light emitting device.

  In recent years, an organic EL (electroluminescence) device, which is one of light emitting devices, has been expected as a display device that can replace a liquid crystal display device, and is in practical use. An organic EL device generally includes organic EL pixels as light emitting pixels regularly arranged in a display area. Each organic EL pixel emits light generated when electrons injected from the cathode (electron injection electrode) and holes injected from the anode (hole injection electrode) are recombined inside the light emitting layer (organic EL layer). Eject. Organic EL pixels that emit three primary colors, that is, organic EL pixels that emit red light, organic EL pixels that emit green light, and organic EL pixels that emit blue light are regularly arranged in the display region of the organic EL device. Therefore, color display is possible.

  As a method of obtaining the light of the three primary colors, a method of forming a light emitting layer that generates light of a different color for each organic EL pixel and a light emitting layer that generates light of a wide wavelength region common to all organic EL pixels are formed. In addition, there is a method for obtaining light in a specific wavelength region using a color filter. It is difficult to obtain light having an ideal peak wavelength without using a color filter and the cost of forming a different light emitting layer for each organic EL pixel. In addition, the use of a color filter is not preferable because it increases the manufacturing cost. Therefore, in recent years, the thickness of the inorganic transparent layer such as ITO (indium oxide / tin alloy) constituting the anode is changed for each organic EL pixel, and between the electrodes (between the cathode and the anode) or one of them. A method for enhancing the light emission in a specific wavelength range by resonating the above-described light emission after setting the resonance length between the electrode and the separately formed light reflection layer to a different value for each organic EL pixel has been studied. (See Patent Documents 1 and 2).

Japanese Patent No. 2797883 JP 2004-119131 A

  However, in order to form an inorganic transparent layer such as ITO with a different layer thickness for each organic EL pixel, it is necessary to repeat the thin film formation step and the photolithography step a plurality of times. Further, it is difficult to obtain satisfactory three primary color lights only by the effect of enhancing a specific wavelength due to resonance, and it is preferable to use a color filter in combination to obtain a high-quality color image. Therefore, the above-described technique has a problem that it leads to process complexity and an increase in manufacturing cost.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.

[Application Example 1]
A light emitting device having three types of light emitting pixels of a red light emitting pixel, a green light emitting pixel, and a blue light emitting pixel in each of a plurality of light emitting regions regularly arranged on a substrate, wherein the three types of light emitting pixels are provided. Each of these includes, in order from the substrate side, a light reflecting layer or semi-reflective layer, a transparent resin layer, a transparent conductive first electrode, a light emitting functional layer, and a light reflective or semi-reflective first electrode. And the transparent resin layer is a colored transparent resin layer colored in a color corresponding to the emission color of each of the light emitting pixels. apparatus.

With the light emitting device having such a configuration, light generated in the light emitting functional layer can be colored in colors corresponding to the light emission colors of the respective light emitting pixels, that is, the three primary colors. Therefore, a color image can be displayed without using a color filter.
Note that the transparent resin layer is colored in a color corresponding to the emission color of each light emitting pixel. This means that the transparent resin layer constituting the red light emitting pixel is a red transparent resin layer colored in red and green. That is, the transparent resin layer constituting the light emitting pixel is a green transparent resin layer colored in green, and the transparent resin layer constituting the blue light emitting pixel is a blue transparent resin layer colored in blue.

[Application Example 2]
In the above light-emitting device, the thickness of the colored transparent resin layer is the sum of the optical distance of the colored transparent resin layer, the optical distance of the first electrode, and the optical distance of the light-emitting functional layer. The thickness is an optical distance that emphasizes the light emission of the light emitting pixel on which the colored transparent resin layer is formed by resonance generated between the light reflection layer or the semi-reflection layer and the second electrode. A light emitting device characterized by the above.

  With the light emitting device having such a configuration, it is possible to obtain three primary color lights with further improved color purity by a synergistic effect of the coloring effect by the colored transparent resin layer and the improvement effect of color purity by resonance. Therefore, a higher quality color image can be displayed without using a color filter. The optical distance of each layer is the product of the layer thickness (thickness in the direction perpendicular to the substrate) of each layer and the refractive index of the layer.

[Application Example 3]
In the above light-emitting device, the light-emitting functional layer is a white light-emitting functional layer, and the three kinds of light-emitting pixels are layers having the same material and layer thickness except for the color and layer thickness of the colored transparent resin layer. A light emitting device comprising the light emitting device.

  With the light emitting device having such a configuration, a color image can be formed by the effect of the colored transparent resin layer while reducing the manufacturing cost.

[Application Example 4]
In the above light-emitting device, each of the plurality of light-emitting regions includes a drive element that drives the light-emitting pixel, and a contact hole that electrically connects the drive element and the first electrode. The light reflecting layer or the semi-reflective layer is a metal layer, and in the contact hole formation region, the same layer as the light reflecting layer or the semi-reflective layer is patterned, so that the above-mentioned in a plan view is obtained. A light emitting device comprising a light reflecting layer or a contact cap spaced apart from the semi-reflective layer by a predetermined distance.

  With the light emitting device having such a configuration, the connection resistance between the drive element and the first electrode can be reduced. Therefore, a higher quality color image can be formed.

[Application Example 5]
The light-emitting device described above, wherein the metal layer is a light-reflecting layer, and the second electrode is semi-reflective.

  With such a structure, the light-emitting device can be used as a top emission type light-emitting device that extracts light from the second electrode side.

[Application Example 6]
The light-emitting device described above, wherein the metal layer is a semi-reflective layer, the second electrode has light reflectivity, and the substrate has transparency. .

  With such a structure, the light-emitting device can be used as a bottom emission type light-emitting device in which light emission is extracted from the first electrode side.

[Application Example 7]
The light-emitting device described above, wherein a circularly polarizing plate is provided on a surface from which the light emission is emitted.

  With the light emitting device having such a configuration, external light (light irradiated from the outside of the light emitting device) is reflected by the light reflecting layer or the second electrode and emitted to the outside of the light emitting device. Can be suppressed. Therefore, a higher quality color image can be formed.

[Application Example 8]
Each of a plurality of light emitting regions regularly arranged on a substrate emits red light, each having a structure in which a first electrode, a light emitting functional layer, and a second electrode are stacked in order from the substrate side. A method of manufacturing a light emitting device including any one of three types of light emitting pixels, a red light emitting pixel that emits green light, a green light emitting pixel that emits green light, and a blue light emitting pixel that emits blue light. Or a first step of forming a semi-reflective layer, and supplying a liquid material containing a transparent resin and a coloring material having substantially the same color as the light emission color of each pixel on the light reflective layer or the semi-reflective layer. Step 2, a third step of curing the liquid material to form a colored transparent resin layer on the light reflecting layer or the semi-reflective layer, and the substrate on which the colored transparent resin layer is formed A fourth step of forming a transparent conductive layer on the transparent conductive layer; A fifth step of forming the first electrode in the light emitting region, a sixth step of forming a light emitting functional layer on the first electrode, and light reflectivity on the light emitting functional layer. Or a seventh step of forming the second electrode having a semi-reflective property.

  According to such a manufacturing method, the colored transparent resin layer colored in the color corresponding to the emission color of each light emitting pixel can be formed on the light reflecting layer or semi-reflective layer of each light emitting pixel. That is, a red transparent resin layer on the light reflecting layer or semi-reflective layer of the red light emitting pixel, a green transparent resin layer on the light reflecting layer or semi-reflective layer of the green light emitting pixel, and a light reflecting layer or semi-reflective of the blue light emitting pixel. A blue transparent resin layer can be formed on each layer. The colored transparent resin layer can improve the color purity of light emitted from each light emitting pixel. Accordingly, it is possible to obtain a light emitting device capable of displaying a higher quality color.

[Application Example 9]
In the method for manufacturing a light emitting device described above, the sixth step is a step of forming a white light emitting functional layer that emits white light, and the second step is the step formed by the third step. The sum of the optical distance of the colored transparent resin layer, the optical distance of the transparent conductive layer, and the optical distance of the light emitting functional layer determines the light emission of the light emitting pixel on which the colored transparent resin layer is formed. A method for manufacturing a light-emitting device, comprising the step of supplying the liquid material so as to have an optical distance emphasized by resonance generated between the semi-reflective layer and the second electrode.

According to such a manufacturing method, the colored transparent resin layer having a different layer thickness can be formed for each light emitting pixel without using a photolithography method. The white light can be converted into any of the three primary color lights having a more preferable wavelength range by a synergistic effect of the effect of enhancing the light in a specific wavelength range due to resonance and the coloring effect of the colored transparent resin layer. Therefore, in the case of using a light emitting functional layer that emits white light common to the above three types of light emitting pixels, a light emitting device capable of displaying an even higher quality color can be obtained.
The optical distance is the product of the layer thickness and the refractive index (of the material forming the layer). The optical distance varies depending on the emission color. Accordingly, when the sum of the optical distance of the transparent conductive layer and the optical distance of the light emitting functional layer is common among the three types of light emitting pixels, the supply amount of the liquid material is set for each of the three types of light emitting pixels. And the thickness of the colored transparent resin layer is also different for each of the three types of light emitting pixels. Further, emphasizing resonance of the light emission of the light emitting pixels means that light in a wavelength range other than the light emission of each light emitting pixel (that is, one of the three primary color lights) is reduced to improve color purity. .

[Application Example 10]
In the method of manufacturing the light emitting device, the light reflecting layer or the semi-reflective layer is a metal layer, and a driving element corresponding to each of the light emitting pixels is provided on the substrate before the first step. An eighth step of forming and a ninth step of forming a planarization layer covering the driving element on the substrate are sequentially performed, and between the first step and the second step, A tenth step of selectively removing a part of the planarization layer to form a contact hole exposing at least a part of the electrode of the driving element is further performed, and the first step includes the metal layer. The light reflecting layer or the semi-reflective layer is formed in the light emitting region, and the metal layer is patterned, and the light reflecting layer or the semi-reflective layer and a predetermined region are formed in the contact hole forming region. Work to form contact caps that are spaced apart The fifth step is a step of patterning the transparent conductive layer to form the first electrode straddling two regions of the contact hole forming region and the light emitting region. A method for manufacturing a light emitting device.

  According to such a manufacturing method, the connection resistance (contact resistance) between the drive element and the first electrode can be reduced without increasing the number of steps. Therefore, it is possible to obtain a light emitting device capable of displaying a higher quality color without increasing the manufacturing cost.

[Application Example 11]
In the method for manufacturing a light emitting device described above, the planarizing layer is an organic resin layer, and an oxygen-containing gas is used as a processing gas on the substrate between the tenth step and the second step. Plasma treatment using a plasma treatment and a fluorine-containing gas as a treatment gas is performed to impart liquid repellency to the exposed surface of the organic resin layer, and lyophilicity is imparted to the surface of the light reflection layer or the semi-reflection layer. 11. A method for manufacturing a light emitting device, wherein the eleventh step is performed.

  According to such a manufacturing method, in the second step, the possibility that the liquid material flows out around the light reflecting layer or the semi-reflecting layer can be reduced. Therefore, a light emitting device with further improved reliability can be obtained.

[Application Example 12]
The method for manufacturing a light emitting device according to the above, wherein the second step is a step of discharging and supplying the liquid material by an ink jet method.

  The inkjet method is low in cost and has high controllability of the supply position and supply amount of the liquid material. Therefore, according to such a manufacturing method, an even higher quality light emitting device can be obtained at a lower cost.

[Application Example 13]
In the manufacturing method of the light emitting device described above, the first step is a step of forming a light reflecting layer, and the seventh step is a step of forming the second electrode having semi-reflectivity. A method for manufacturing a light-emitting device.

  According to such a manufacturing method, while light emission is resonated between the above-described light reflection layer and the above-described second electrode having semi-reflectivity, light in which light in a specific wavelength range is emphasized by resonance. A top-emission light-emitting device that can be emitted from the second electrode side can be obtained.

[Application Example 14]
In the method for manufacturing a light emitting device described above, the substrate is a transparent substrate, the ninth step is a step of forming the organic resin layer having transparency, and the first step is a step of forming a semi-reflective layer. A method of manufacturing a light emitting device, wherein the seventh step is a step of forming the second electrode having light reflectivity.

  According to such a manufacturing method, while the light emission is resonated between the above-described semi-reflective layer and the above-described second electrode having light reflectivity, the light in which the light in the specific wavelength range is emphasized by the resonance. A bottom emission type light emitting device that can be emitted from the transparent substrate side through the semi-reflective layer and the organic resin layer can be obtained.

  Hereinafter, embodiments of a light emitting device and a method for manufacturing the light emitting device will be described with reference to the drawings. In the drawings shown below, the dimensions and ratios of the components are appropriately different from the actual ones in order to make the components large enough to be recognized on the drawings.

(First embodiment)
FIG. 1 is a circuit configuration diagram showing an overall configuration of an organic EL device 1 as a light emitting device of the present embodiment. The organic EL device 1 is an active matrix organic EL device that individually controls light emission of the organic EL pixels 20 as a plurality of light emitting pixels regularly arranged in the display region 100 to form an image in the display region. It is. The organic EL device 1 is a top emission type organic EL device that emits light from the second electrode side, but the circuit configuration is a bottom emission type organic EL device according to a second embodiment to be described later. 2 is the same.

  The organic EL device 1 includes a display area 100 and a peripheral area. In the display area 100, a plurality of scanning lines 102 extending in the X direction, a plurality of signal lines 104 extending in the Y direction, and a plurality of capacitance lines 106 extending in the Y direction are formed. Yes. A rectangular area in which the X direction is defined by the signal line 104 and the capacitor line 106 and the Y direction is defined by the center line of the scanning line 102 is a pixel region 101.

  In each pixel region 101, a switching TFT (thin film transistor) 108, which is a component constituting the organic EL pixel 20, a scanning signal is supplied to the gate electrode via the scanning line 102, and a signal is transmitted via the switching TFT 108. A storage capacitor 110 that holds a pixel signal supplied from the line 104, a driving TFT 112 as a driving element to which a pixel signal held by the storage capacitor 110 is supplied to the gate electrode, and a capacitor line 106 via the driving TFT 112 A pixel electrode 25 (see FIG. 2) from which a drive current flows is formed. The pixel is a functional concept including the above-described components, and the pixel area 101 is a planar concept that regularly partitions the display area 100.

  A scanning line driving circuit 120 and a signal line driving circuit 130 are formed in an area around the display area 100. The scanning line driving circuit 120 sequentially supplies scanning signals to the scanning line 102 in accordance with various signals supplied from an external circuit (not shown). The signal line driver circuit 130 supplies an image signal to the signal line 104. A pixel driving current is supplied to the capacitor line 106 from an external circuit (not shown). The operation of the scanning line driving circuit 120 and the operation of the signal line driving circuit 130 are synchronized with each other by a synchronization signal supplied from an external circuit via the synchronization signal line 140.

  When the scanning line 102 is driven and the switching TFT 108 is turned on, the potential of the signal line 104 at that time is held in the holding capacitor 110, and the level of the driving TFT 112 is determined according to the state of the holding capacitor 110. Then, a driving current flows from the capacitor line 106 to the pixel electrode 25 (see FIG. 2) via the driving TFT 112, and the organic EL pixel 20 emits light according to the magnitude of the driving current.

  The organic EL pixel 20 includes a red organic EL pixel 20R as a red light emitting pixel defined by the color of emitted light, a green organic EL pixel 20G as a green light emitting pixel, and a blue organic EL pixel 20B as a blue light emitting pixel. There are three types. The organic EL pixel 20 is a general term for the above three types of organic EL pixels. Similarly, for other names (for example, “resonance length” and the like), when the symbols R, G, and B are omitted, they are generic names of the three types of names.

  As will be described later, the above three types of organic EL pixels 20 of the organic EL device 1 of the present embodiment emphasize light obtained from a common light emitting functional layer, light in a specific wavelength range by resonance, and colored transparency. By using together with the coloring effect by the resin layer, one of the three primary color lights is used. A color image is formed in the display area 100 by each of the independently controlled organic EL pixels 20 emitting one of the three primary colors of red, green, and blue according to the magnitude of the drive current. Note that the order of arrangement of the organic EL pixels 20R, 20G, and 20B is not limited to the order shown in FIG. 1, and it is also possible to arrange them in the order of R, B, and G.

  Next, a planar aspect of each element constituting the pixel in the pixel region 101 of the organic EL device 1 according to the present embodiment will be described. FIG. 2 is a plan view schematically showing the arrangement of each element constituting one pixel in the pixel region 101. 3 shows a total of three types of organic EL pixels, that is, a red organic EL pixel 20R, a green organic EL pixel 20G, and a blue organic EL pixel 20B, which are formed adjacent to each other in the X direction. Since the planar configuration is not related to the color of the emitted light, the three types of pixels will be described below without distinction. In FIG. 2, the elements formed on the entire surface of the substrate 10 (see FIG. 4) such as the light emitting functional layer 26 (see FIG. 4) are not shown.

  As shown in the figure, the pixel region 101 is partitioned by the scanning line 102 in the X direction and partitioned by the signal line 104 and the capacitor line 106 in the Y direction. In each pixel region 101, a light emitting region 19 that is a region from which light is emitted is formed. In the light emitting region 19, a pixel electrode (anode) 25 as a first electrode (to be described later), a light emitting functional layer 26 (see FIG. 4), and a cathode 27 (see FIG. 4) as a second electrode are provided on the substrate 10 (FIG. 4). 4 reference) from the side.

  As described above, the organic EL device 1 is a top emission type. Therefore, the light emitting region 19 can overlap each element constituting the organic EL pixel 20 in plan view. As shown in the figure, the light emitting region 19 of the organic EL device 1 is formed in substantially the entire area excluding a contact hole forming region described later in a frame partitioned by three types of wiring such as the above-described scanning line 102. Then, it overlaps the switching TFT 108, the storage capacitor 110, and the driving TFT 112 as a driving element in a plan view.

A region other than the light emitting region 19 in the pixel region 101 is covered with a partition wall 77 (see FIG. 4). Therefore, like the organic EL device 1 according to the present embodiment, when the pixel electrode 25 is larger than the light emitting region 19 in plan view, an annular region in which the pixel electrode 25 and the partition wall 77 overlap each other around the light emitting region 19. Is formed.
Note that the light emitting region 19 is a region that actually emits light, and is a partial region within the pixel region 101. A region where a partition wall 77 and the like which will be described later is formed is included in the pixel region 101 but is not included in the light emitting region 19. Further, the areas of the light emitting regions 19 (19R, 19G, 19B) of the three types of organic EL pixels (20R, 20G, 20B) are not limited to the same.

  The driving TFT 112 includes a first semiconductor layer 31, a first gate electrode 33 formed by patterning the same layer as the scanning line 102, and the like. A region where the first semiconductor layer 31 and the first gate electrode 33 overlap is a channel region, and a source region 35 and a drain region 36 are formed on both sides of the channel region. The source region 35 is connected to the protruding portion of the capacitor line 106 through the third contact hole 53.

  The drain region 36 is formed in the first contact hole 51, the first relay electrode 41 as the electrode of the driving TFT 112, and the formation region of the second contact hole 52 as the contact hole (hereinafter, “ It is connected to the pixel electrode 25 via a contact cap 22 formed in a region including a contact hole forming region and a ring-shaped region having a slight width surrounding the region. In the organic EL device 1 of the present embodiment, the first contact hole 51 and the second contact hole 52 overlap in plan view. Further, the first relay electrode 41 and the contact cap 22 overlap each other in plan view.

  Here, the contact hole formation region is a region that reliably includes the second contact hole 52 in a plan view in consideration of misalignment. When the misalignment is 0, the contact hole formation region overlaps with the second contact hole 52 in plan view. When the misalignment is not 0, the contact hole forming region includes an annular region surrounding the second contact hole 52 and having the same (value) width as the misalignment value. The contact cap 22 is formed so as to include a contact hole forming region 23 (see FIG. 3) in plan view.

  FIGS. 3A to 3C show examples of the shape of the contact cap 22. The contact cap 22 shown in FIG. 3A is formed so as to slightly include the periphery of the contact hole forming region 23, similarly to the contact cap 22 shown in FIG. The shape of the contact hole formation region 23 in plan view is a shape obtained by adding an annular region having the same width as the alignment deviation value to the second contact hole 52, and the shape of the contact cap 22 in plan view is substantially the same as the shape. It is the shape which added the cyclic | annular area | region of the width.

  The shape of the contact cap 22 in plan view shown in FIG. 3B is a shape with a sufficient margin for the same contact hole forming region 23 as that shown in FIG. On the light reflection layer 21 (see FIG. 4), which has a predetermined interval with respect to the light emitting region 19, and overlaps with the light emitting region 19 in the liquid material supplying step (second step) described later. It is avoided that the liquid material supplied to the gas flows out to the contact cap 22. The shape of the contact cap 22 shown in FIG. 3C in plan view is further enlarged from that shown in FIG. 3B and extended to a region overlapping the first gate electrode 33. However, the light emitting region 19 has a similar interval.

  The switching TFT 108 shown in FIG. 2 includes a second semiconductor layer 32, a second gate electrode 34 from which a part of the scanning line 102 protrudes, and the like. A region where the second semiconductor layer 32 and the second gate electrode 34 overlap is a channel region. A source region 37 and a drain region 38 are formed on both sides of the channel region. The drain region 38 is connected to the signal line 104 through the fourth contact hole 54. The source region 37 is connected to the second relay electrode 42 through the fifth contact hole 55. One end of the second relay electrode 42 is connected to the first gate electrode 33 via the sixth contact hole 56, and the other end is connected to the scanning line 102 via the seventh contact hole 57. Are connected to the lower electrode 43 (of the storage capacitor 110) formed by patterning the same layer. The lower electrode 43 forms a storage capacitor 110 with the interlayer insulating layer 71 (see FIG. 4) and the upper electrode 44 protruding from the capacitor line 106.

  Next, a cross-sectional structure of the organic EL pixel 20 in the organic EL device 1 according to the present embodiment and an aspect in which white light is changed to the three primary color light by the structure will be described. FIG. 4 is a schematic cross-sectional view of the organic EL device 1 of the present embodiment. The organic EL device 1 is a top emission type organic EL device that emits light toward an observer positioned in the direction of a white arrow. The organic EL device 1 is characterized by the structure of the organic EL pixel 20. Therefore, in FIG. 4, a cross-sectional view obtained by connecting the cross sections along the lines AA ′, BB ′, and CC ′ shown in FIG. 2, that is, each organic EL pixel 20 and the organic EL. A cross-sectional view of a driving TFT 112 that drives a pixel and a storage capacitor 110 is shown. The switching TFT 108 is not shown.

  As shown in the figure, the organic EL device 1 includes a driving TFT (hereinafter referred to as “TFT”) 112 as a driving element, a storage capacitor 110, and a light emitting pixel between a substrate 10 and a counter substrate 12. An organic EL pixel 20 (R, G, B) is provided. The TFT 112 includes a first semiconductor layer 31 including a source region 35 and a drain region 36, a gate insulating layer 70, and a gate electrode 33. As described above, the storage capacitor 110 includes the lower electrode 43 formed by patterning the same layer as the scanning line 102, the interlayer insulating layer 71, and the upper electrode 44 protruding from the capacitor line 106. Yes. At least a part of the TFT 112 and the storage capacitor 110 overlaps the organic EL pixel 20 in plan view. Since the organic EL device 1 is a top emission type as described above, the counter substrate 12 needs to be transparent.

The TFT 112 is formed on the substrate 10, and the TFT is covered with an interlayer insulating layer 71 made of silicon oxide (SiO ₂ ), silicon nitride (SiN), or the like. A predetermined region of the interlayer insulating layer 71 is selectively etched to form a first contact hole 51 that exposes the drain region 36 of the TFT 112 and a third contact hole 53 that exposes the source region 35. . A first relay electrode 41 is formed in the first contact hole 51 so as to be embedded. Further, the capacitor line 106 and the source region 35 are electrically connected through the third contact hole 53.

  On the first relay electrode 41 and the capacitor line 106, an organic resin layer 73 is formed as a planarizing layer made of acrylic. The material for forming the organic resin layer 73 must be organic and have insulating properties. In addition to acrylic, for example, polyimide can be used. The contact hole formation region 23 (see FIG. 3) of the organic resin layer 73 is selectively etched to form a second contact hole 52 (see FIG. 3). A contact cap 22 is formed in a region overlapping the region including the contact hole forming region 23 on the organic resin layer 73 in plan view.

  On the organic resin layer 73, the light reflection layer 21 is formed as a light reflection layer or a semi-reflection layer that is spaced apart from the contact cap 22 by a predetermined distance. As will be described later, the contact cap 22 and the light reflecting layer 21 are patterned using the same material layer, that is, a laminate of an ITO (indium oxide / tin alloy) layer having a thickness of 10 nm and an Al (aluminum) layer having a thickness of 80 nm. Is formed. Al becomes semi-reflective when deposited very thinly, but if it is 80 nm, it hardly transmits light and can be used as a light reflecting layer.

Here, “having light reflectivity” is not limited to the meaning of reflecting 100% of the irradiated light. The meaning of reflecting (having a function) at least 60% of the irradiated light, preferably 80%, particularly preferably about 100% is also included. Light that is not reflected may be transmitted, absorbed and dissipated as heat.
Similarly, “transparency (having)” is not limited to the meaning of transmitting substantially 100% of the irradiated light. The meaning of transmitting (having a function) at least 60%, preferably 80%, particularly preferably about 100% of the irradiated light is also included. Light that is not transmitted may be reflected, absorbed and dissipated as heat.
Furthermore, the semi-reflectivity described later is not limited to the meaning of reflecting 50% of the irradiated light. The meaning of reflecting (having a function) 30% to 70%, preferably 40% to 60%, particularly preferably about 50% of the irradiated light is also included. All light that is not reflected is preferably transmitted, but some (of the non-reflected light) may be absorbed and dissipated as heat.

  The material for forming the light reflecting layer 21 is not limited to Al, and other metals such as Ag (silver) or Al alloy may be used. The ITO layer formed under the Al layer is a layer for improving the adhesion between the organic resin layer 73 made of an organic material and the Al layer, and is not an essential element in the embodiment of the present invention. In the embodiment of the present invention, the contact cap 22 is not an essential element. When the contact cap is not formed, the light reflection layer 21 only needs to have reflectivity, and it is not essential to have conductivity. Therefore, in such a case, the light reflecting layer 21 can be made of a light reflecting material having little conductivity such as a metal oxide.

  A colored transparent resin layer 79 is formed on the light reflecting layer 21. The colored transparent resin layer 79 is a transparent resin layer containing a coloring material, and has a function of coloring white light into colored light by transmitting light in a specific wavelength range and absorbing light outside the wavelength range. Have. The color of the colored transparent resin layer 79 is a color that matches the emission color of each organic EL pixel 20. Specifically, a red transparent resin layer 79R is formed on the red organic EL pixel 20R, a green transparent resin layer 79G is formed on the green organic EL pixel 20G, and a blue transparent resin layer 79B is formed on the blue organic EL pixel 20B. ing. The red transparent resin layer 79R transmits red light, that is, light having a wavelength in the range of about 610 to 780 nm, and absorbs light outside the above range. The green transparent resin layer 79G transmits green light, that is, light having a wavelength in the range of about 500 to 570 nm, and absorbs light outside the above range. The blue transparent resin layer 79B transmits blue light, that is, light having a wavelength in the range of about 430 to 460 nm, and absorbs light outside the above range. Note that the terms “transmission” and “absorption” described above do not mean 100% transmission, but preferably about 100% transmission. The thickness of each colored transparent resin layer (79R, 79G, 79B) differs among the three types of organic EL pixels. Specifically, the layer thickness of the red transparent resin layer 79R is 165 nm, the layer thickness of the green transparent resin layer 79G is 95 nm, and the layer thickness of the blue transparent resin layer 79B is 50 nm.

  On the colored transparent resin layer 79, a pixel electrode 25 made of ITO is formed as a transparent first electrode. The pixel electrode 25 is formed at a distance from each other in a region straddling the formation region of the colored transparent resin layer 79 and the formation region of the contact cap 22 for each organic EL pixel, and the contact cap 22 and the first relay. The electrode 41 is electrically connected to the drain region 36 of the TFT 112. When the contact cap 22 is not formed, the end of the pixel electrode 25 is formed so as to be embedded in the second contact hole 52 and is directly connected to the first relay electrode 41.

  A partition wall 77 is formed on the organic resin layer 73 on which the pixel electrode 25 is formed. The partition wall 77 may be formed in a region where the light reflection layer 21 is not formed in a plan view so as not to decrease the aperture ratio (the ratio of the region in the display region 100 where light is actually emitted). preferable. However, in consideration of misalignment at the time of patterning and the like, it is preferable that an annular region where the light reflection layer 21 and the pixel electrode 25 overlap in a plan view is formed on the outer periphery of the light reflection layer 21. Note that the partition wall 77 is preferably formed also for complete insulation between the pixel electrode 25 and the cathode 27, but is not an essential element in the embodiment of the present invention.

  A white light emitting functional layer 26 </ b> W as the light emitting functional layer 26 and a semi-reflective cathode 27 are sequentially laminated on the entire surface of the substrate 10 on which the partition walls 77 are formed. A stacked body of the pixel electrode 25, the white light emitting functional layer 26 </ b> W, and the cathode 27 is the organic EL pixel 20. The cathode 27 and the white light emitting functional layer 26 </ b> W are formed over the entire display area 100 (see FIG. 1) on the substrate 10. Therefore, the cathode 27 has the same potential in the display area. In addition, the three types of organic EL pixels 20 (R, G, B) have the same structure, and the red, green, and blue are formed by the action of the colored transparent resin layer 79 (R, G, B) as will be described later. Emits light of any of the three primary colors. When a voltage is applied between the pixel electrode 25 individually controlled by the TFT 112 and the cathode 27, a current flows through the white light emitting functional layer 26W to emit white light.

  The white light emitting functional layer 26W is a laminate of a plurality of layers (not shown). Specifically, it is a structure in which a hole injection layer, a hole transport layer, a light emitting layer (organic EL layer), an electron transport layer, and an electron injection layer are laminated in order from the substrate 10 side, and the total layer thickness is 145 nm. When it is difficult to emit white light using a single material layer, the light emitting layer (organic EL layer) may be a laminate of two or more types of material layers. In the organic EL device 1 of the present embodiment, the following materials are used for each layer.

  The hole injection layer is HI406 (made by Idemitsu Kosan Co., Ltd.), and the hole transport layer is HT320 (made by Idemitsu Kosan Co., Ltd.). The light emitting layer is a laminate of a blue green light emitting layer and a red light emitting layer. A blue-green light emitting layer consists of material which added BD102 (made by Idemitsu Kosan Co., Ltd.) as a dopant to BH215 (made by Idemitsu Kosan Co., Ltd.) as a host material. The red light emitting layer is made of a material obtained by adding RD001 (made by Idemitsu Kosan Co., Ltd.) as a dopant to BH215 as a host material. The electron transport layer is Alq3 (aluminum quinolinol), and the electron injection layer is LiF (lithium fluoride). The cathode 27 is made of an MgAg (magnesium / silver) alloy having a layer thickness of 12.5 nm. With such a thin layer thickness, semi-reflective properties can be imparted while using a metal material.

On the cathode 27, the 1st passivation layer 85, the stress relaxation layer 86, and the 2nd passivation layer 87 are laminated | stacked in order. The first passivation layer 85 is made of silicon oxide (SiO ₂ ) having a thickness of 200 nm, the stress relaxation layer 86 is made of acrylic resin having a thickness of 2000 nm, and the second passivation layer 87 is made of silicon oxide (SiO ₂ ) having a thickness of 400 nm. . Such a passivation layer or the like has a function of suppressing the intrusion of moisture or the like and improving the reliability of the organic EL device 1.

  On the second passivation layer 87, a counter substrate 12 having transparency is bonded through an adhesive layer 78. A circularly polarizing plate 88 is attached to the surface opposite to the surface facing the adhesive layer 78 of the counter substrate 12, that is, the surface from which light is emitted so as to cover at least the display region 100. The circularly polarizing plate 88 is a laminate of a linearly polarizing plate and a ¼ wavelength correction plate (an element that gives a ¼ wavelength phase difference between orthogonally polarized components) in order to suppress reflection of external light. It is affixed. Utilizing the property that the rotation direction of the polarized light is reversed when the light is reflected, it is possible to suppress the outside light reflected by the light reflecting layer 21 and the like from being emitted from the display region 100, thereby improving the display quality. ing.

(Effect of this embodiment)
The organic EL device 1 according to the present embodiment is characterized in that a colored transparent resin layer 79 is provided between the pixel electrode 25 and the light reflecting layer 21. The colored transparent resin layer has two functions: a function of coloring white light into colored light (specifically, three primary colors of red light, green light, and blue light) and a function of adjusting the resonance length 7. Plays. Hereinafter, the coloring function will be described first.

  As described above, in the organic EL pixel 20, the white light emitting functional layer 26W is sandwiched between the pixel electrode 25 having transparency and the cathode 27 having semi-reflectivity. Then, light is emitted toward the cathode 27 side to form an image. There are three types of organic EL pixels 20, 20R, 20G, and 20B. The three types of organic EL pixels 20 are formed of a common layer except for the thickness and color of the colored transparent resin layer 79. However, the size in plan view is not limited to the same among the three types of organic EL pixels.

  A colored transparent resin layer 79 and a light reflecting layer 21 are formed on the substrate electrode 10 side of the pixel electrode 25. Of the light generated in the white light emitting functional layer 26 </ b> W, about 50% of the light traveling toward the cathode 27 is emitted through the counter substrate 12 without being reflected by the cathode 27. The remaining approximately 50% is reflected by the cathode 27, then passes through the white light emitting functional layer 26W, the pixel electrode 25, and the colored transparent resin layer 79, and is then reflected by the light reflecting layer 21 in the direction of the cathode 27. .

  Here, approximately 50% of the light generated in the white light emitting functional layer 26W goes directly to the pixel electrode 25 side, that is, the light reflecting layer 21 side. Therefore, at least about 75% of the light directed to the pixel electrode 25 and the light reflected by the cathode 27 and directed to the pixel electrode 25, that is, about 75% of the light generated in the white light emitting functional layer 26 </ b> W has at least the colored transparent resin layer 79 2. Pass through (transmit). As described above, the colored transparent resin layer 79 has a function of converting white light into colored light by transmitting only light in a predetermined wavelength range. Therefore, in each organic EL pixel 20 included in the organic EL device 1, the red organic EL pixel 20R emits light close to red light, the green organic EL pixel 20G emits light close to green light, and the blue organic EL pixel 20B emits light close to blue light. The organic EL device 1 can display a color image by using the white light emitting functional layer 26 </ b> W common to all the organic EL pixels 20 by the above-described three primary color lights and not including a color filter.

  Next, the function that the colored transparent resin layer 79 adjusts the resonance length 7 will be described. As described above, approximately 50% of the light generated in the white light emitting functional layer 26 </ b> W goes to the light reflecting layer 21, is reflected by the light reflecting layer, and goes to the cathode 27. The cathode 27 always reflects approximately 50% of the light from the light reflecting layer 21 side toward the light reflecting layer 21 side. Therefore, the light reflecting layer 21 and the cathode 27, and the colored transparent resin layer 79, the electrode 25, and the white light emitting functional layer 26W, each of which is sandwiched between the light reflecting layer and the cathode, have a total of five layers. The structure composed of constituent elements functions as a (micro) resonance structure that enhances color purity by enhancing light in a specific wavelength range.

  The resonance length 7 (R, G, B) of the resonance structure, that is, the optical distance (layer) between the surface of the light reflecting layer 21 on the white light emitting functional layer 26W side and the surface of the cathode 27 on the white light emitting functional layer 26W side. The product of the thickness and the refractive index is set to a value that emphasizes the emission color of each organic EL pixel 20. That is, the resonance length 7R of the red organic EL pixel 20R is a resonance length that emphasizes red light, the resonance length 7G of the green organic EL pixel 20G is a resonance length that emphasizes green light, and the resonance length of the blue organic EL pixel 20B. Reference numeral 7B denotes a resonance length that emphasizes blue light. The resonance length 7R, the resonance length 7G, and the resonance length 7B are different optical distances.

The above-described resonance length 7 is set based on the following equation.
2 × resonance length (7R, 7G, 7B) + φ2 + φ3 = mλ (1)
Here, φ2 = phase difference at the light emitting functional layer 26 side interface of the light reflecting layer 21,
φ3 = phase difference at the light emitting functional layer 26 side interface of the cathode 27,
λ = median wavelength to be enhanced,
And m is a positive integer.

  In the three types of organic EL pixels 20 (R, G, B) provided in the organic EL device 1, the pixel electrode 25 and the white light emitting functional layer 26W are common, and the light reflection layer 21 is formed by patterning a common layer. Has been. Therefore, the resonance length 7 is set by adjusting the layer thickness of the colored transparent resin layer 79. The light emission of the organic EL pixel 20 is caused by the laminated structure of the pixel electrode 25, the cathode 27, and the white light emitting functional layer 26W sandwiched between the pair of electrodes. Since the colored transparent resin layer 79 is located outside the laminated structure, the layer thickness can be arbitrarily set without affecting the light emitting function. The coloring degree of the colored transparent resin layer 79, that is, the pigment content, is preferably determined so that the emitted light is colored in a preferable color after setting the layer thickness of the colored transparent resin layer.

  As described above, the organic EL device 1 according to the present embodiment includes the colored transparent resin layer 79 on the outer side of the laminated structure that performs the light emitting function. The colored transparent resin layer has two functions: a function of coloring white light into colored light and a function of adjusting the resonance length 7. The light generated in the white light emitting functional layer 26W is emitted as one of the three primary color lights due to the synergistic effect of the two functions. As a result, the organic EL device 1 forms a color image even though the light emitting functional layer is common among the three types of organic EL pixels 20 (R, G, B) and no color filter is provided. Can be displayed.

  Unlike the conventional organic EL device, the organic EL device 1 does not perform the function of adjusting the resonance length in the pixel electrode and the light emitting functional layer. Therefore, the pixel electrode and the light emitting functional layer are layers that consider only the light emitting function. Thickness can be set. Therefore, the coloring effect by resonance can be obtained without impairing the light emitting function. Moreover, since the components other than the colored transparent resin layer 79 use the same material among the three types of organic EL pixels 20 (R, G, B), an increase in manufacturing cost is suppressed. Therefore, the organic EL device 1 can improve the display quality while suppressing the manufacturing cost.

  In the embodiment of the present invention, the reflectance of the cathode 27 is not limited to the above-described approximately 50%. A configuration in which the colored transparent resin layer 79 is reflected by a higher ratio and allows more light to pass through is also possible. Although the luminous efficiency is lowered, the ratio of light emitted as white light is lowered, so that display quality can be improved.

(Second Embodiment)
Next, the organic EL device 2 according to the second embodiment will be described. FIG. 14 is a schematic plan view showing the arrangement of elements constituting one pixel in the pixel region 101 of the organic EL device 2 according to the present embodiment. The organic EL device 2 according to the present embodiment is a bottom emission type organic EL device that emits light in the pixel electrode 25 side, that is, in the direction of a white arrow shown in FIG. Except for the light emission direction and the like, the configuration is substantially the same as that of the organic EL device 1 of the first embodiment. Therefore, common constituent elements are given the same reference numerals, and description thereof is partially omitted.

  Since the organic EL device 2 is a bottom emission type, the light emitting region 19 and elements such as the driving TFT 112 and the storage capacitor 110 do not overlap. Therefore, the light emitting area 19 is reduced. As described above, the region other than the light emitting region 19 in the pixel region 101 is covered with the partition wall 77. Therefore, in the organic EL device 2 according to the present embodiment, the driving TFT 112 and the storage capacitor 110 described above overlap the partition wall 77 in plan view. Hereinafter, the cross-sectional structure will be described.

FIG. 5 is a schematic cross-sectional view of the organic EL device 2 according to the present embodiment. It is a schematic cross section which connected the cross-sectional view in a total of three cutting lines of the DD 'line, the EE' line, and the FF 'line in FIG. Note that the position of the cutting line in FIG. 14 is changed from the cutting line in FIG. 2 described above. Since the organic EL device 2 of this embodiment is a bottom emission type organic EL device, a transparent substrate 11 is used instead of the substrate 10 of the organic EL device 1 as a substrate on which the TFT 112 and the like are formed. Further, the counter substrate 13 does not need transparency.
Since it is a bottom emission type, a semi-reflective layer is formed by laminating an ITO layer having a thickness of about 10 nm and an Al layer having a thickness of about 10 nm in place of the light reflecting layer 21 below the colored transparent resin layer 79. Layer 29 is formed. The cathode 28 as the second electrode is made of Al having a layer thickness of about 100 nm and has light reflectivity. Since the white light emitting functional layer 26W is sandwiched between the semi-reflective layer 29 and the light-reflecting cathode 28, the light generated in the white light-emitting functional layer 26W resonates between the semi-reflective layer 29 and the cathode 28. However, it is emitted in the direction of the white arrow through the semi-reflective layer 29 and the transparent substrate 11.

  The pixel electrode 25 and the white light emitting functional layer 26 </ b> W are made of substantially the same material as the outer element of the organic EL device 1. In addition, the material for forming the partition wall 77 and the like and the configuration of the TFT 112 are substantially the same as those of the organic EL device 1 according to the first embodiment.

  The colored transparent resin layer 79 is colored in a different color for each organic EL pixel, similarly to the colored transparent resin layer of the organic EL device 1. Accordingly, the red organic EL pixel 20R includes a red transparent resin layer 79R, the green organic EL pixel 20G includes a green transparent resin layer 79G, and the blue organic EL pixel 20B includes a blue transparent resin layer 79B, and emits white light. Can be colored in any color.

  Further, as shown in the drawing, the layer thickness of the colored transparent resin layer 79 included in the organic EL device 2 of the present embodiment is different for each of the three types of organic EL pixels 20, similarly to the layer thickness of the organic EL device 1. Yes. Due to the difference in layer thickness, the resonance length 7R of the red organic EL pixel 20R is set to an optical distance that emphasizes red light by resonance, and the resonance length 7G of the green organic EL pixel 20G is optical that emphasizes green light by resonance. The resonance length 7B of the blue organic EL pixel 20B is set to an optical distance that emphasizes blue light by resonance. White light generated in the white light emitting functional layer 26 </ b> W is emitted as one of the three primary color lights due to resonance and the coloring effect of the colored transparent resin layer 79. Therefore, like the organic EL device 1 according to the first embodiment, the organic EL device 2 does not include a color filter and uses the white light emitting functional layer 26 </ b> W for the light emitting functional layer 26. A color image can be formed on the transparent substrate 11 side by emitting light of three primary colors of red, green, and blue.

  The organic EL device 2 of the present embodiment is slightly inferior in luminance and the like compared to the organic EL device 1 according to the first embodiment because the light emitting region 19 is reduced. However, since it is a bottom emission type, the cathode 28 can be formed thick overall, so that it is not necessary to separately provide a thick film portion for reducing the surface resistance of the cathode, and the manufacturing cost can be reduced.

(Third embodiment)
Next, the organic EL device 3 according to the third embodiment will be described. FIG. 6 is a schematic cross-sectional view of the organic EL device 3 of the present embodiment. The organic EL device 3 according to the present embodiment is a top emission type, and has substantially the same configuration as the organic EL device 1 according to the first embodiment except for the aspect of the light emitting functional layer 26 as described later. Therefore, the aspect in plan view is substantially the same as the aspect of the organic EL device 1 shown in FIG. Therefore, similarly to the organic EL device 1 shown in FIG. 4, a cross-sectional view obtained by connecting the cross-sectional views along the three cutting lines AA ′ line, BB ′ line, and CC ′ line in FIG. A schematic cross-sectional view of the organic EL device 3 is shown. In addition, the same code | symbol is provided to the component which is common in the component of the organic EL apparatus 1, and description of description is partially omitted.

  The organic EL device 3 of the present embodiment is a top emission type organic EL device that emits light in the direction of a white arrow shown in the drawing. Therefore, like the organic EL device 1, the substrate 10 does not need transparency, and the counter substrate 12 is a transparent substrate. Similar to the light reflection layer of the organic EL device 1, the light reflection layer 21 is formed by patterning a laminate of an ITO layer having a thickness of 10 nm and an Al layer having a thickness of 80 nm. The cathode 27 is made of an MgAg (magnesium / silver) alloy having a layer thickness of 12.5 nm and has semi-reflectivity. The material for forming the partition wall 77, the stress relaxation layer 86, and the like is substantially the same as that of the organic EL device 1 according to the first embodiment. In addition, the configuration of the storage capacitor 110 and the TFT 112 is substantially the same as that of the organic EL device 1 according to the first embodiment.

  A feature of the organic EL device 3 according to the embodiment is that each organic EL pixel 20 (R, G, B) includes a different light emitting functional layer 26. The red organic EL pixel 20R has a red light emitting functional layer 26R that emits red light, the green organic EL pixel 20G has a green light emitting functional layer 26G that emits green light, and the blue organic EL pixel 20B has a blue light emitting function that emits blue light. Each layer 26B is provided. Each light emitting functional layer 26 (R, G, B) is locally formed in a recess having the partition wall 77 as a side wall and the pixel electrode 25 as a bottom.

  Similar to the organic EL device 1, approximately 50% of the light emission generated in each of the light emitting functional layers 26 (R, G, B) by energization between the pixel electrode 25 and the cathode 27 is approximately 50%. It is injected in the direction of the colored transparent resin layer 79, and approximately 50% is injected in the direction of the cathode 27. About 50% of the light emitted in the direction of the cathode 27 is reflected in the direction of the light reflecting layer 21 and the colored transparent resin layer 79, and about 50% is transmitted through the cathode 27 and the counter substrate 12, etc. Injected outside the device. That is, approximately 25% of the light emission generated in the light emitting functional layer 26 is emitted outside the organic EL device without passing through the colored transparent resin layer 79 even once.

  In the organic EL device 3 according to the present embodiment, the light emitted without passing through the colored transparent resin layer 79 described above is not white light but colored light corresponding to each organic EL pixel 20. Therefore, unlike the organic EL device 1 of the first embodiment, the organic EL device 3 does not emit white light to the outside. Further, the light emitted or reflected in the direction of the light reflecting layer 21 and the colored transparent resin layer 79 is already colored light corresponding to each organic EL pixel 20. Since such light passes through the colored transparent resin layer 79 and resonates between the light reflecting layer 21 and the cathode 27, it is emitted to the outside as light with further improved color purity. Therefore, the organic EL device 3 can form a color image with higher quality than an organic EL device having a light emitting functional layer common to each organic EL pixel.

  Note that the above-described light emitting functional layer 26 (R, G, B) can be formed by an ink jet method in which droplets of a liquid material in which a material for forming the light emitting functional layer is dissolved or dispersed in a solvent or the like are ejected. As shown in the drawing, since the formation region of the light emitting functional layer 26 (R, G, B) is a concave portion, the formation materials of the plurality of layers constituting the light emitting functional layer 26 are individually made into the above-described liquid materials. By sequentially performing a combination process of ejection and removal of a solvent or the like, an individual light emitting functional layer 26 can be formed in each organic EL pixel 20 (R, G, B). Of the layers constituting the light emitting functional layer 26, only the light emitting layer may be formed in the above-described recess by the above-described ink jet method, and the hole transport layer or the like may be formed on the entire surface of the substrate 10 including the upper surface of the partition wall 77. Good. Furthermore, it is also possible to locally form different light emitting functional layers 26 between the organic EL pixels 20 (R, G, B) by the mask vapor deposition method without using the ink jet method.

(Fourth embodiment)
Next, a method for manufacturing an organic EL device will be described as a fourth embodiment. 7 to 13 are process cross-sectional views illustrating the method for manufacturing the organic EL device of this embodiment. Similar to FIGS. 4 and 6 used in the description of the first to third embodiments, the cross sections along the lines AA ′, BB ′, and CC ′ shown in FIG. 2 are joined together. A sectional view, that is, a sectional view of each organic EL pixel 20, a driving TFT 112 that drives the organic EL pixel, and a storage capacitor 110 is shown, and the switching TFT 108 is not shown. In addition, this embodiment shows a method for manufacturing the top emission type organic EL device 1 according to the first embodiment. Therefore, the same reference numerals are given to the constituent elements (of the organic EL device), and descriptions of the formation materials and the like are partially omitted. Hereinafter, the process will be described with reference to process cross-sectional views in FIGS.

  First, as shown in FIG. 7A, as the eighth step, the first semiconductor layer 31 including the source region 35 and the drain region 36, the gate insulating layer 70, the first step on the substrate 10 by a known technique. A TFT 112 composed of one gate electrode 33 is formed. At the same time, the lower electrode 43 of the storage capacitor 110 and the switching TFT 108 (not shown) are formed (see FIG. 2). The first gate electrode 33 and the lower electrode 43 are formed by patterning the same layer.

  Next, an interlayer insulating layer 71 made of silicon oxynitride or the like is formed on the entire surface of the substrate 10 on which the TFTs 112 and the like are formed. Then, a part of the interlayer insulating layer is selectively removed by a photolithography method, and a part of the surface of the third contact hole 53 and the drain region 36 exposing the part of the surface of the source region 35 is exposed. A first contact hole 51 is formed. In this process, fourth to seventh contact holes (54, 55, 56, and 57 (see FIG. 2)) not shown are also formed at the same time.

  Then, a conductive material layer such as Al is formed on the entire surface of the substrate 10, and the conductive material layer is patterned to form a first relay electrode 41 as an electrode of the TFT 112. By the above patterning, the upper electrode 44, the capacitor line 106, the second relay electrode 42 (see FIG. 2), and the signal line 104 are also formed at the same time. A part of the capacitor line 106 is embedded in the third contact hole 53 as shown in the figure, and is electrically connected to the source region 35. As described above, the upper electrode 44 is formed by patterning so that a part of the capacitor line 106 protrudes. Through the above process, the storage capacitor 110 including the upper electrode 44, the interlayer insulating layer 71, and the lower electrode 43 is formed.

  Next, as a ninth step, an organic resin layer 73 as a planarizing layer made of acrylic is formed on the entire surface of the substrate 10 on which the first relay electrode 41 and the like are formed. The material for forming the organic resin layer 73 must be organic and have insulating properties. In addition to acrylic, for example, polyimide may be used.

  Next, as a tenth step, a part of the organic resin layer 73 is selectively removed by photolithography to expose a part of the first relay electrode 41 connected to the drain region 36 of the TFT 112. A second contact hole 52 as a hole is formed.

  Next, as shown in FIG. 7B, an ITO (indium oxide / tin alloy) layer 62 having a thickness of 10 nm as an adhesion improving layer on the entire surface of the substrate 10 and a layer thickness of 80 nm as a conductive material. An Al (aluminum) layer 63 as a metal layer is sequentially formed (laminated). Since the laminated body of the ITO layer 62 and the Al layer 63 becomes the light reflecting layer 21 (see FIG. 8A) by patterning as will be described later, it does not have transparency (transparency) and faces the substrate 10. It is necessary that the surface on the opposite side to the light-receiving side has high light reflectivity. Al becomes semi-reflective when deposited very thinly, but if it is 80 nm, it hardly transmits light and can be used as a light reflecting layer.

  The material for forming the layer that becomes the light reflection layer 21 by patterning is not limited to Al, and other metals such as Ag (silver), Al alloys, or the like may be used. The ITO layer 62 is formed to improve the adhesion between the organic resin layer 73 and the Al layer 63, but is not essential in the embodiment of the present invention. In the embodiment of the present invention, the contact cap 22 (see FIG. 8A) described later is not an essential requirement. When the contact cap is not formed, the light reflection layer 21 only needs to have reflectivity, and it is not essential to have conductivity. Therefore, in such a case, a light-reflective material having almost no electrical conductivity, such as a metal oxide, can be used as a material for forming the layer that becomes the light-reflective layer 21. In the drawings shown below, the ITO layer 62 is not shown. Therefore, the light reflection layer 21 formed by patterning the above-described laminate is illustrated as being composed of a single layer of the Al layer 63.

  Next, as shown in FIG. 8A, as a first step, the laminated body of the ITO layer 62 and the Al layer 63 is patterned to form the light reflecting layer 21 in each light emitting region 19 (R, G, B). At the same time, the contact cap 22 is formed in a region including at least the contact hole forming region 23 and having a predetermined distance from the light emitting region 19. The red light emitting region 19R is a region where the red organic EL pixel 20R will be formed in the future, the green light emitting region 19G is a region where the green organic EL pixel 20G will be formed in the future, and the blue light emitting region 19B is the future. This is a region where the blue organic EL pixel 20B is formed.

  In the drawing, two light reflecting layers 21 (and two light emitting regions 19) are illustrated so as to sandwich the contact cap 22 with a predetermined interval. However, actually, only one light emitting region 19 is formed for each pixel region 101 so as to surround the contact cap 22 as shown in FIGS. The organic EL device 1 which is a target of the present embodiment is a top emission type. Therefore, as illustrated, the light reflecting layer 21 can be formed so as to overlap the TFT 112 and the storage capacitor 110. Similarly, the light reflecting layer 21 can be formed so as to overlap with a switching TFT 108 (not shown).

  As described above, the contact hole formation region 23 is a region that surely includes the second contact hole 52 in a plan view in consideration of misalignment, and has a narrow width that surrounds the second contact hole 52. It is an area including an annular area. The purpose of forming the contact cap 22 is to reduce the connection resistance between the first relay electrode 41 connected to the drain region 36 and the pixel electrode 25. Accordingly, the shape of the contact cap 22 is not limited to the contact hole forming region 23 as long as a predetermined interval is provided between the contact cap 22 and the light reflecting layer 21.

Next, as shown in FIG. 8 (b), as the eleventh step, the entire surface of the substrate 10 is subjected to plasma treatment using O ₂ gas plasma A as an oxygen-containing gas and CF ₄ gas plasma B serving as fluorine-containing gas. Plasma treatment is continuously performed. By such treatment, the residue attached in the photolithography process or the like is removed by oxidation on the surface of the light reflection layer 21 and the contact cap 22 and cleaned. Accordingly, lyophilicity is imparted to the surfaces of the light reflecting layer 21 and the contact cap 22. On the other hand, the surface of the region where the laminate of the ITO layer 62 and the Al layer 63 is selectively removed in the first step and the organic resin layer 73 is exposed is the carbon contained in the organic resin layer. Atoms combine with fluorine atoms contained in plasma B. As a result, liquid repellency is imparted to the surface of the region.

  Next, as shown in FIG. 9A, a transparent resin and a coloring material are applied from the nozzle 81 of the ink jet apparatus (not shown) to the light reflecting layer 21 of each light emitting region 19 (R, G, B) as the second step. A liquid material (hereinafter referred to as “liquid material”) C containing a transparent resin containing 89 (R, G, B) is discharged. Such a method is an ink jet method. Note that the liquid material C is not discharged onto the contact cap 22. Here, the liquid material containing a transparent resin is a liquid material from which a transparent resin can be obtained after curing. Therefore, in addition to a liquid containing a transparent resin itself such as acrylic, methacrylic, epoxy and the like, a precursor of the transparent resin and a liquid containing the precursor (for example, a solution containing the precursor as a solute) are also applicable. In addition, “containing liquid” includes both a solution that dissolves the transparent resin or the like as a solute, and a dispersion in which the transparent resin or the like is dispersed. Furthermore, an intermediate liquid between “solution” and “dispersion” is also included. The coloring material is a coloring functional material such as a dye, an inorganic pigment, or an organic pigment.

  The light reflection layer 21 of each light emitting region 19 (R, G, B) described above is a liquid containing a coloring material that matches the light emission color of the organic EL pixel 20 (R, G, B) to be formed in the future. Material C is discharged. That is, the liquid material C containing the red coloring material 89R on the light reflecting layer 21 in the red light emitting region 19R and the liquid material C containing the green coloring material 89G on the light reflecting layer 21 in the green light emitting region 19G are emitted blue. The liquid material C containing the blue coloring material 89B is discharged onto the light reflection layer 21 in the region 19B. Since the surface of the light reflecting layer 21 is lyophilic by the eleventh step, the discharged liquid material C spreads substantially uniformly over the entire surface of the light reflecting layer 21. On the other hand, since the surface of the area around the light reflecting layer 21 where the organic resin layer 73 is exposed is given liquid repellency, the liquid material C does not flow out into the area.

  The surface of the contact cap 22 is also given lyophilicity in the eleventh step. However, since the contact cap 22 and the light reflection layer 21 are separated by the organic resin layer 73 having a liquid repellent surface, the liquid material C does not flow out to the contact cap 22. Accordingly, the liquid material C remains on the light reflecting layer 21.

  Next, as shown in FIG. 9B, the liquid material C is cured as a third step, and a colored transparent resin layer 79 is formed on each light reflecting layer 21. The thickness of the colored transparent resin layer 79 is 165 nm for the red transparent resin layer 79R, 95 nm for the green transparent resin layer 79G, and 50 nm for the blue transparent resin layer 79B. As described in the first embodiment, this layer thickness is the sum of the optical distance of the colored transparent resin layer 79, the optical distance of the pixel electrode 25 described later, and the optical distance of the white light emitting functional layer 26W described later. However, the light emission of each organic EL pixel 20 (R, G, B) is determined to be emphasized by resonance. In the second step, the discharge amount of the liquid material C is set so that the layer thickness after curing becomes the above value. In addition, said hardening is performed by methods, such as a heating or ultraviolet irradiation.

  Next, as shown in FIG. 10A, as a fourth step, an ITO layer 65 having a layer thickness of 30 nm as a transparent conductive material is formed on the entire surface of the substrate 10 by sputtering or the like.

  Next, as shown in FIG. 10B, as a fifth step, the ITO layer 65 is patterned so as to straddle the light reflecting layer 21 and the contact cap 22 to form the pixel electrode 25 as the first electrode. To do. As described above, the contact cap 22 is connected to the drain region 36 of the TFT 112 via the first relay electrode 41, and the colored transparent resin layer 79 is not formed on the contact cap. Accordingly, the pixel electrode 25 is electrically connected to the drain region 36 of the TFT 112 in the contact hole forming region 23.

  Next, as shown in FIG. 11A, a partition wall 77 is formed in a region excluding the light emitting region 19 on the substrate 10. The partition wall 77 is formed by patterning an organic or inorganic insulating material layer such as polyimide formed on the entire surface of the substrate 10 by a photolithography method.

  Next, as shown in FIG. 11B, as a sixth step, a white light emitting functional layer 26W that emits white light is formed on the entire surface of the substrate 10 by vapor deposition. Further, a cathode 27 as a second electrode having semi-reflectivity is formed on the white light emitting functional layer as a seventh step. The white light emitting functional layer 26W is a light emitting functional layer that emits light that contains visible light of all wavelengths substantially uniformly, and is formed in common to the three types of organic EL pixels 20 (R, G, B). . The materials for forming the white light emitting functional layer 26W and the cathode 27 are as described in the first embodiment.

  Next, as shown in FIG. 12, a first passivation layer 85, a stress relaxation layer 86, and a second passivation layer 87 are sequentially stacked on the entire surface of the substrate 10 on which the cathode 27 is formed. The material for forming the three layers is as described in the first embodiment. Next, as shown in FIG. 13, the counter substrate 12 is bonded onto the substrate 10 via an adhesive layer 78 made of an acrylic resin or the like. Then, as shown in the drawing, a circularly polarizing plate 88 is bonded to an area including at least the display area 100 on the counter substrate 12.

  Through the above steps, the resonance length 7 (R, G, B) which is an optical distance between the interface (surface) of the light reflecting layer 21 on the light emitting functional layer side and the interface (surface) of the cathode 27 on the light emitting functional layer side. However, it is possible to obtain a top emission type organic EL device having different values for the three types of organic EL pixels 20 (R, G, B).

Such an organic EL device is the organic EL device 1 of the first embodiment. As described above, in the organic EL device 1, the resonance length 7 (R, G, B) of each organic EL pixel 20 (R, G, B) has the color purity of each light emission by the colored transparent resin layer 79. The value is set to improve. Further, the colored transparent resin layer 79 itself also functions to improve color purity by absorbing light outside the predetermined wavelength range. Therefore, the organic EL device 1 manufactured by the manufacturing method of the present embodiment emits light of the three primary colors of red, green, and blue even though the white light emitting functional layer 26W is used for the light emitting functional layer 26. Color display can be performed.
Moreover, the manufacturing method of this embodiment consists of a process equivalent to the manufacturing method of the conventional organic EL apparatus except the formation process of the colored transparent resin layer 79. FIG. Since the colored transparent resin layer 79 is also formed by the ink jet method without using photolithography, the colored transparent resin layer 79 having a different layer thickness can be used for each organic EL pixel 20 (R, G, B) at a low cost. Can be formed. Furthermore, it does not have a color filter manufacturing process. Therefore, according to the manufacturing method of the present embodiment, an organic EL device capable of displaying a color image can be obtained at a very low cost.

(Modification 1)
The organic EL devices of the first to third embodiments are active matrix type organic EL devices that use TFTs as drive elements. However, the organic EL device embodying the present invention is not limited to such an embodiment, and can be embodied as a passive matrix type. With such an organic EL device, the manufacturing cost of the drive element is reduced, and therefore the manufacturing cost can be further reduced while suppressing the deterioration in display quality.

(Modification 2)
In the organic EL device 1 of the first embodiment and the organic EL device 2 of the second embodiment, the white light emitting functional layer 26W is formed on the entire surface of the substrate (the substrate 10 or the transparent substrate 11). However, the organic EL device embodying the present invention is not limited to such an embodiment, and the white light emitting functional layer 26W is formed by the partition wall 77 and the pixel electrode 25 as in the organic EL device 3 of the third embodiment. A mode of locally forming in the recessed portion to be formed is also possible. With such an aspect, it is easy to form the white light emitting functional layer 26W by an ink jet method, and it can be advantageous in terms of manufacturing cost in a large organic EL device having a large display area.

(Modification 3)
The organic EL devices of the first to third embodiments do not include a color filter. However, a mode in which a color filter is used in combination is also possible. In particular, when the white light emitting functional layer 26W is used for the light emitting functional layer 26, it is possible to avoid the direct emission of white light by the color filter. Therefore, in this mode, a higher quality color image can be formed.

(Modification 4)
The organic EL device 3 according to the third embodiment described above is a top emission type, and the light emitting functional layer 26 has a different light emitting functional layer (red light emitting functional layer 26R) for each organic EL pixel 20 (R, G, B). Etc.). Such a mode of the light emitting functional layer 26 is also possible in a bottom emission type organic EL device. That is, in the organic EL device 3, instead of the light reflecting layer 21 located between the substrate 10 and the colored transparent resin layer 79 (R, G, B), a semi-layer made of Al or silver alloy having a layer thickness of about 10 nm. A reflective layer 29 is formed. Similarly to the organic EL device 3, a different light emitting functional layer is formed for each organic EL pixel 20 (R, G, B) in a recess having the partition wall 77 as a side wall and the pixel electrode 25 as a bottom. Specifically, a red light emitting functional layer 26R is formed in the concave portion of the red organic EL pixel 20R, a green light emitting functional layer 26G is formed in the concave portion of the green organic EL pixel 20G, and the blue organic EL pixel 20B. A blue light emitting functional layer 26B is formed in the recess.

  The cathode 27 formed on the upper layer of the light emitting functional layer 26 is provided with a light reflectivity by forming a metal layer such as Al with a thickness of several tens of nanometers. Further, a transparent substrate 11 is used in place of the substrate 10, and a circularly polarizing plate 88 is attached to the surface of the transparent substrate on which the TFT or the like is not formed. With this configuration, the light emission functional layer 26 emits light with a color purity due to resonance between the light-reflecting cathode 27 and the semi-reflective layer 29 and the colored transparent resin layer 79 (R, G, B). Thus, a bottom emission type organic EL device that emits light from the transparent substrate 11 side can be obtained. As described in the second embodiment, the organic EL device can form the cathode 27 thick overall, so that it is not necessary to separately provide a thick film portion for reducing the resistance, thereby reducing the manufacturing cost. it can.

The circuit block diagram which shows the whole structure of the organic electroluminescent apparatus as a light-emitting device. The top view which shows typically arrangement | positioning of each element which comprises 1 pixel in a pixel area. The figure which shows the example of the shape of a contact cap. 1 is a schematic cross-sectional view illustrating an organic EL device according to a first embodiment. The schematic cross section which shows the organic electroluminescent apparatus of 2nd Embodiment. The schematic cross section which shows the organic electroluminescent apparatus of 3rd Embodiment. Process sectional drawing which shows the manufacturing method of the organic electroluminescent apparatus of 4th Embodiment. Process sectional drawing which shows the manufacturing method of the organic electroluminescent apparatus of 4th Embodiment. Process sectional drawing which shows the manufacturing method of the organic electroluminescent apparatus of 4th Embodiment. Process sectional drawing which shows the manufacturing method of the organic electroluminescent apparatus of 4th Embodiment. Process sectional drawing which shows the manufacturing method of the organic electroluminescent apparatus of 4th Embodiment. Process sectional drawing which shows the manufacturing method of the organic electroluminescent apparatus of 4th Embodiment. Process sectional drawing which shows the manufacturing method of the organic electroluminescent apparatus of 4th Embodiment. FIG. 10 is a schematic plan view showing the arrangement of elements constituting one pixel in the pixel region of the organic EL device according to the second embodiment.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Organic EL device of 1st Embodiment, 2 ... Organic EL device of 2nd Embodiment, 3 ... Organic EL device of 3rd Embodiment, 7B ... Resonance length of blue organic EL pixel, 7G ... Green organic Resonance length of EL pixel, 7R ... Resonance length of red organic EL pixel, 10 ... Substrate, 11 ... Transparent substrate, 12 ... Counter substrate, 13 ... Counter substrate, 19R ... Red light emission region, 19G ... Green light emission region, 19B ... Blue Light emitting area, 20R: Red organic EL pixel as red light emitting pixel, 20G: Green organic EL pixel as green light emitting pixel, 20B: Blue organic EL pixel as blue light emitting pixel, 21: Light reflecting layer, 22 ... Contact cap, 23 ... contact hole forming region, 25 ... pixel electrode as first electrode, 26B ... blue light emitting functional layer, 26G ... green light emitting functional layer, 26R ... red light emitting functional layer, 26W ... white light emitting functional layer, 7 ... cathode as second electrode, 28 ... cathode as second electrode, 29 ... semi-reflective layer, 31 ... first semiconductor layer, 32 ... second semiconductor layer, 33 ... first gate electrode, 34 ... second gate electrode, 35 ... source region, 36 ... drain region, 37 ... source region, 38 ... drain region, 41 ... first relay electrode as electrode of drive element, 42 ... second relay electrode, 43 ... lower electrode, 44 ... upper electrode, 51 ... first contact hole, 52 ... second contact hole, 53 ... third contact hole, 54 ... fourth contact hole, 55 ... fifth contact hole, 56 ... Sixth contact hole, 57 ... Seventh contact hole, 62 ... ITO layer as adhesion improving layer, 63 ... Al layer as metal layer, 65 ... ITO layer, 70 ... Gate insulating layer, 71 ... Interlayer insulation layer 73: Organic resin layer as a flattening layer, 77 ... Partition, 78 ... Adhesive layer, 79B ... Blue transparent resin layer, 79G ... Green transparent resin layer, 79R ... Red transparent resin layer, 81 ... Nozzle, 85 ... First Passivation layer, 86 ... Stress relaxation layer, 87 ... Second passivation layer, 88 ... Circularly polarizing plate, 89B ... Blue coloring material, 89G ... Green coloring material, 89R ... Red coloring material, 100 ... Display area, 101 ... Pixel area DESCRIPTION OF SYMBOLS 102 ... Scan line, 104 ... Signal line, 106 ... Capacitor line, 108 ... Switching TFT, 110 ... Holding capacitor, 112 ... Drive TFT as a drive element, 120 ... Scan line drive circuit, 130 ... Signal line drive circuit , 140: synchronization signal line, A: plasma of O ₂ gas as oxygen-containing gas, B: plasma of CF ₄ gas as fluorine-containing gas, C: liquid material containing transparent resin.

Claims (14)

A light-emitting device including three types of light-emitting pixels, a red light-emitting pixel, a green light-emitting pixel, and a blue light-emitting pixel, in each of a plurality of light-emitting regions regularly arranged on a substrate,
Each of the three types of light emitting pixels includes, in order from the substrate side, a light reflecting layer or semi-reflective layer, a transparent resin layer, a transparent conductive first electrode, a light emitting functional layer, and light reflecting or A second electrode having semi-reflectivity, and a stacked structure;
The light-emitting device, wherein the transparent resin layer is a colored transparent resin layer colored in a color corresponding to a light emission color of each of the light-emitting pixels. The light-emitting device according to claim 1,
The thickness of the colored transparent resin layer is such that the sum of the optical distance of the colored transparent resin layer, the optical distance of the first electrode, and the optical distance of the light emitting functional layer is formed by the colored transparent resin layer. The light-emitting device has a thickness that provides an optical distance that enhances light emission of the light-emitting pixel by resonance generated between the light reflection layer or the semi-reflection layer and the second electrode. The light-emitting device according to claim 1 or 2,
The light emitting functional layer is a white light emitting functional layer,
The three types of light emitting pixels are constituted by layers having the same material and layer thickness except for the color and layer thickness of the colored transparent resin layer. The light-emitting device according to claim 1,
Each of the plurality of light emitting regions is formed with a driving element that drives the light emitting pixel, and a contact hole that electrically connects the driving element and the first electrode, and the light reflecting layer or the The semi-reflective layer is a metal layer,
A contact cap is formed in the contact hole forming region by patterning the same layer as the light reflecting layer or the semi-reflective layer, thereby separating the light reflecting layer or the semi-reflective layer at a predetermined interval in a plan view. A light-emitting device formed. The light-emitting device according to claim 4,
The light emitting device, wherein the metal layer is a light reflecting layer, and the second electrode is semi-reflective. The light-emitting device according to claim 4,
The light emitting device, wherein the metal layer is a semi-reflective layer, the second electrode has light reflectivity, and the substrate has transparency. The light-emitting device according to claim 1,
A light emitting device comprising a circularly polarizing plate on a surface from which the light emission is emitted. Each of the plurality of light emitting regions regularly arranged on the substrate emits red light having a structure in which each of the first electrode, the light emitting functional layer, and the second electrode is laminated in order from the substrate side. A method of manufacturing a light emitting device including any one of three types of light emitting pixels, a red light emitting pixel, a green light emitting pixel that emits green light, and a blue light emitting pixel that emits blue light,
A first step of forming a light reflecting layer or a semi-reflective layer in the light emitting region;
A second step of supplying a liquid material containing a transparent resin and a coloring material of substantially the same color as the emission color of each pixel on the light reflection layer or the semi-reflection layer;
A third step of curing the liquid material to form a colored transparent resin layer on the light reflection layer or the semi-reflection layer;
A fourth step of forming a transparent conductive layer on the substrate on which the colored transparent resin layer is formed;
A fifth step of patterning the transparent conductive layer to form the first electrode in the light emitting region;
A sixth step of forming a light emitting functional layer on the first electrode;
A seventh step of forming the second electrode having light reflectivity or semi-reflectivity on the light emitting functional layer;
A method for manufacturing a light-emitting device, comprising: A method for manufacturing a light emitting device according to claim 8,
The sixth step is a step of forming a white light emitting functional layer that emits white light,
In the second step, the sum of the optical distance of the colored transparent resin layer formed in the third step, the optical distance of the transparent conductive layer, and the optical distance of the light emitting functional layer is The liquid material is supplied so as to have an optical distance that emphasizes the light emission of the light emitting pixel on which the transparent resin layer is formed by resonance generated between the light reflection layer or the semi-reflection layer and the second electrode. A method for manufacturing a light-emitting device, characterized by comprising: A method for manufacturing a light emitting device according to claim 8 or 9,
The light reflection layer or the semi-reflection layer is a metal layer,
Before the first step, an eighth step of forming a driving element corresponding to each of the light emitting pixels on the substrate, and a ninth layer of forming a planarizing layer covering the driving element on the substrate. And in order,
A tenth contact hole is formed between the first step and the second step to selectively remove a part of the planarization layer to expose at least a part of the electrode of the driving element. Further process,
In the first step, the metal layer is patterned to form the light reflecting layer or the semi-reflective layer in the light emitting region, and the metal layer is patterned to form the light in the contact hole forming region. Forming a reflective cap or a contact cap spaced apart from the semi-reflective layer by a predetermined distance;
The fifth step is a step of patterning the transparent conductive layer to form the first electrode straddling two regions of the contact hole forming region and the light emitting region.
A method for manufacturing a light-emitting device. It is a manufacturing method of the light-emitting device according to claim 10,
The planarizing layer is an organic resin layer;
Between the tenth step and the second step, a plasma treatment using an oxygen-containing gas as a treatment gas and a plasma treatment using a fluorine-containing gas as a treatment gas are performed on the substrate to expose the organic resin layer. A method of manufacturing a light emitting device, comprising performing an eleventh step of imparting liquid repellency to the surface of the light reflecting layer and imparting lyophilicity to the surface of the light reflecting layer or the semi-reflecting layer. It is a manufacturing method of the light emitting device according to any one of claims 8 to 11,
The method of manufacturing a light emitting device, wherein the second step is a step of discharging and supplying the liquid material by an ink jet method. It is a manufacturing method of the light-emitting device according to claim 12,
The first step is a step of forming a light reflecting layer,
The method of manufacturing a light emitting device, wherein the seventh step is a step of forming the second electrode having semi-reflectivity. It is a manufacturing method of the light-emitting device according to claim 12,
The substrate is a transparent substrate;
The ninth step is a step of forming the organic resin layer having transparency,
The first step is a step of forming a semi-reflective layer,
The method of manufacturing a light emitting device, wherein the seventh step is a step of forming the second electrode having light reflectivity.

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