JP2009259731A - Light emitting device and method of manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To form transparent layers different in layer thicknesses among organic EL pixels without repeating photolithography processes several times. <P>SOLUTION: The method of manufacturing a light emitting device 1 includes a second step of forming a light reflecting layer 21 in a light emitting region 19 on a substrate 10, a third step of supplying liquid material C including a transparent resin onto the light reflecting layer 21, a fourth step of curing the liquid material C to form a transparent resin layer 79 on the light reflecting layer 21, a fifth step of forming a transparent conductive layer 65 on the substrate 10 where the transparent resin layer 79 is formed, a sixth step of patterning the transparent conductive layer 65 to form a first electrode 25 in the light emitting region 19, a seventh step of forming a light emitting function layer 26 on the first electrode 25, and an eighth step of forming a second electrode 27 having semi-reflectivity on the light emitting function layer 26. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a light emitting device and a method for manufacturing the light emitting device.

  In recent years, an organic EL (electroluminescence) device, which is one of light emitting devices, has been expected as a display device that can replace a liquid crystal display device, and is in practical use. An organic EL device generally includes organic EL pixels as light emitting pixels regularly arranged in a display area. Each organic EL pixel emits light generated when electrons injected from the cathode (electron injection electrode) and holes injected from the anode (hole injection electrode) are recombined inside the light emitting layer (organic EL layer). Eject. Organic EL pixels that emit three primary colors, that is, organic EL pixels that emit red light, organic EL pixels that emit green light, and organic EL pixels that emit blue light are regularly arranged in the display region, thereby providing color display. Is possible.

As a method of obtaining the light of the three primary colors, a method of forming a light emitting layer that generates light of a different color for each organic EL pixel and a light emitting layer that generates light in a wide wavelength region common to all organic EL pixels are formed. In addition, there is a method for obtaining light in a specific wavelength region using a color filter. In recent years, the latter method has attracted attention because of the cost of forming a different light emitting layer for each organic EL pixel and the difficulty of obtaining light having an ideal peak wavelength without using a color filter.
On the other hand, obtaining light in a specific wavelength region using only a color filter has a problem that loss due to light having a wavelength to be cut is large. Therefore, the thickness of the inorganic transparent layer such as ITO (indium oxide / tin alloy) constituting the anode is changed for each organic EL pixel, and between the electrodes (between the cathode and the anode) or any one of the electrodes A method has been studied in which the resonance length between the light reflection layer formed separately and a value different for each organic EL pixel is resonated to resonate the light emission described above and emphasize a specific wavelength before passing through the color filter. (See Patent Documents 1 and 2).

Japanese Patent No. 2797883 JP 2004-119131 A

  However, in order to form an inorganic transparent layer such as ITO with a different layer thickness for each organic EL pixel, it is necessary to repeat the thin film formation step and the photolithography step a plurality of times. Therefore, the above-described technique has a problem that it leads to process complexity and an increase in manufacturing cost.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.

[Application Example 1]
A light-emitting device including a light-emitting pixel having a structure in which a first electrode, a light-emitting functional layer, and a second electrode are stacked in order from the substrate side in each of a plurality of light-emitting regions regularly arranged on a substrate. In the manufacturing method, a second step of forming a light reflective layer or a semi-reflective layer in the light emitting region, and a third step of supplying a liquid material containing a transparent resin on the light reflective layer or the semi-reflective layer A fourth step of curing the liquid material to form a transparent resin layer on the light reflecting layer or the semi-reflective layer; and a transparent conductive layer on the substrate on which the transparent resin layer is formed. A sixth step of patterning the transparent conductive layer to form the first electrode in the light emitting region, and a fifth step of forming a light emitting functional layer on the first electrode. Step 7 and the first step having light reflectivity or semi-reflectivity on the light emitting functional layer. Method of manufacturing a light emitting device comprising: the eighth step of forming a electrode, comprising a.

  According to such a manufacturing method, a transparent resin layer having an arbitrary layer thickness can be formed in the light emitting region without using a photolithography method. The optical distance between the light reflecting layer or the semi-reflecting layer and the second electrode can be adjusted. Accordingly, the light emitted between the first electrode and the second electrode is caused to resonate between the light reflecting layer or the semi-reflecting layer and the second electrode while suppressing the manufacturing cost. Thus, light in a specific wavelength range can be emphasized. Note that the light emitting functional layer is a concept including both a single light emitting layer and a laminate of a plurality of layers including at least a light emitting layer.

[Application Example 2]
In the manufacturing method described above, the light emitting pixels formed in each of the plurality of light emitting regions include a red light emitting pixel that emits red light, a green light emitting pixel that emits green light, and a blue light emitting pixel that emits blue light, A method for manufacturing a light-emitting device, comprising three types of regularly arranged light-emitting pixels.

  According to such a manufacturing method, without using a photolithography method, a transparent resin layer having an arbitrary layer thickness is formed in the light emitting region of an arbitrary light emitting pixel among the above three types of light emitting pixels. The optical distance between the light reflection layer or the semi-reflection layer and the second electrode can be adjusted. Therefore, the layer thickness of the first electrode or the light emitting functional layer can be set without considering the resonance length. Therefore, it is possible to obtain a light-emitting device capable of color display with improved display quality while suppressing manufacturing costs.

[Application Example 3]
In the manufacturing method described above, the light reflecting layer or the semi-reflective layer is a metal layer, and corresponds to each of the light emitting pixels on the substrate, and a first step of forming an organic resin layer on the substrate. And a ninth step of forming the driving element to be performed, and a part of the organic resin layer is selectively removed between the first step and the second step, so that an electrode of the driving element is formed. A tenth step of forming a contact hole exposing at least a part of the light-emitting layer, and the second step includes forming the light-reflecting layer or the semi-reflective layer in the light-emitting region by patterning the metal layer. And a step of patterning the metal layer to form a contact hole cap spaced apart from the light reflecting layer or the semi-reflective layer in the contact hole forming region, and the sixth step includes Put the transparent conductive layer on the putter And ring, is a step of forming the first electrode extending over the two regions of the forming region and the emission region of the contact hole, the method of manufacturing the light emitting device, characterized in that.

  According to such a manufacturing method, the contact resistance is made of the same layer as the contact hole cap while reducing the connection resistance (contact resistance) between the electrode of the driving element and the first electrode connected via the contact hole. The transparent resin layer for adjusting the resonance length can be formed on the light reflecting layer or the semi-reflecting layer. Therefore, a light-emitting device with improved display quality while reducing the number of steps can be obtained.

[Application Example 4]
In the manufacturing method described above, the third step includes an optical distance of the transparent resin layer, an optical distance of the transparent conductive layer, and an optical distance of the light emitting functional layer formed in the fourth step. And an optical distance that emphasizes the light emission of the light emitting pixel on which the transparent resin layer is formed by resonance generated between the light reflecting layer or the semi-reflecting layer and the second electrode. A method for manufacturing a light-emitting device, which is a step of supplying the liquid material.

  According to such a manufacturing method, the color purity of light emission of the light emitting pixel on which the transparent resin layer is formed can be improved. Therefore, a light-emitting device capable of color display with further improved display quality can be obtained while suppressing manufacturing costs.

[Application Example 5]
In the manufacturing method described above, in the third step, the liquid material is supplied onto the light reflecting layer or the semi-reflective layer corresponding to two types of the light emitting pixels among the three types of light emitting pixels. The seventh step is a step of forming the common light emitting functional layer on the entire surface of the substrate, and the fifth step and the seventh step are optical components of the transparent conductive layer. The sum of the optical distance and the optical distance of the light emitting functional layer is resonant between the light reflecting layer or the semi-reflective layer and the second electrode, so that the transparent conductive of the three types of light emitting pixels is A method for manufacturing a light-emitting device, comprising the step of forming the transparent conductive layer and the light-emitting functional layer so as to have an optical distance that emphasizes light emission of a light-emitting pixel in which no layer is formed.

  According to such a manufacturing method, the third step can be simplified while resonating the light emission of the three types of light emitting pixels. Therefore, the manufacturing cost of the light emitting device can be reduced without affecting the color purity of the light emission.

[Application Example 6]
The method for manufacturing a light-emitting device according to the above-described manufacturing method, wherein the seventh step is a step of forming the light-emitting functional layer that emits white light.

  Since white light includes light in a wide wavelength range, according to such a manufacturing method, the resonance length, that is, the optical distance between the light reflecting layer or the semi-reflecting layer and the second electrode is measured. By setting, it is possible to emit light of three primary colors more suitable for each light emitting pixel. Therefore, according to such a manufacturing method, a light emitting device capable of color display with further improved display quality can be obtained while suppressing manufacturing costs. Note that the light emitting functional layer that emits white light described above may be formed by stacking a plurality of light emitting layers that emit light of different colors.

[Application Example 7]
In the above manufacturing method, the third step is a step of discharging and supplying the liquid material by an ink jet method.

  Since the inkjet method has high controllability of the supply amount and supply position of the liquid material, the layer thickness controllability in forming the transparent resin layer is improved. Therefore, according to such a manufacturing method, the uniformity of the wavelength emphasized by resonance between the light emitting pixels can be improved, and a light emitting device capable of color display with further improved display quality can be obtained.

[Application Example 8]
In the manufacturing method described above, plasma processing using an oxygen-containing gas as a processing gas and plasma processing using a fluorine-containing gas as a processing gas on the substrate between the second step and the third step. And performing an eleventh step of imparting liquid repellency to the exposed surface of the organic resin layer and imparting lyophilicity to the surface of the light reflecting layer or the semi-reflective layer. Manufacturing method.

According to such a manufacturing method, the liquid material supplied in the third step can be distributed substantially uniformly on the surface of the light reflecting layer or the semi-reflective layer, and the light reflecting layer or the semi-reflective layer. It is possible to avoid outflow to the exposed surface of the organic resin layer around the. Therefore, the transparent resin layer can be formed only on the light reflection layer or the semi-reflection layer and with good layer thickness uniformity. As a result, a light emitting device with further improved display quality can be obtained.
The “exposed surface” described above is a region where the light reflecting layer or the semi-reflecting layer and the contact hole cap are not formed.

[Application Example 9]
In the manufacturing method described above, the second step is a step of forming a light reflecting layer, and the eighth step is a step of forming the second electrode having semi-reflectivity, A method of manufacturing a light emitting device.

  According to such a manufacturing method, while the light emission is resonated between the light reflection layer and the second electrode having the semi-reflectivity, the light in which the light in the specific wavelength range is emphasized by the resonance is used. A top-emission light-emitting device that can be emitted from the second electrode side can be obtained.

[Application Example 10]
In the manufacturing method described above, the first step is a step of forming the organic resin layer having transparency, the second step is a step of forming a semi-reflective layer, and the eighth step Is a step of forming the second electrode having light reflectivity. A method of manufacturing a light-emitting device,

  According to such a manufacturing method, while the light emission is resonated between the semi-reflective layer and the second electrode having the above-described light reflectivity, the light in which light in a specific wavelength range is emphasized by the resonance is described above. A bottom emission type light-emitting device that can be emitted from the substrate side through the semi-reflective layer and the organic resin layer having transparency described above can be obtained.

[Application Example 11]
In the above-described manufacturing method, a twelfth color filter in which color filters corresponding to the respective emission colors of the three types of light emitting pixels are arranged on the opposite side of the surface of the second electrode facing the light emitting functional layer. The manufacturing method of the light-emitting device characterized by further implementing a process.

  According to such a manufacturing method, after the light in a specific wavelength range is emphasized by resonance, the color purity of the light transmitted through the second electrode is further improved by transmitting the color filter. Thus, a top emission type light-emitting device can be obtained.

[Application Example 12]
In the manufacturing method described above, before the second step, the three types of the semi-reflective layer may be provided in a region including the semi-reflective layer opposite to the surface facing the light emitting functional layer in a plan view. A method for manufacturing a light emitting device, further comprising a thirteenth step of forming a color filter corresponding to each emission color of the light emitting pixels.

  According to such a manufacturing method, after light in a specific wavelength range is emphasized by resonance, the color purity of the light transmitted through the semi-reflective layer is further improved by transmitting the color filter. Thus, a bottom emission type light emitting device can be obtained.

[Application Example 13]
A light-emitting device formed by the above-described manufacturing method.

  Such a light-emitting device can display a high-quality image without increasing the manufacturing cost because a resonance length that matches the emission color of each light-emitting pixel can be obtained without using a photolithography method.

[Application Example 14]
Each of a plurality of light emitting regions regularly arranged on the substrate has three types of light emitting pixels: a red light emitting pixel that emits red light, a green light emitting pixel that emits green light, and a blue light emitting pixel that emits blue light. Each of the three types of light-emitting pixels includes a light reflecting layer or semi-reflective layer, a transparent conductive first electrode, a light-emitting functional layer, and a light reflecting layer property or semi-sequentially from the substrate side. A second electrode having a reflective layer property is laminated, and two of the three types of light emitting pixels are the light reflecting layer or the semi-reflective layer and the first light emitting pixel. A transparent resin layer for adjusting a resonance length is disposed between the electrode and the light emitting device.

  With such a configuration, the film formation process and the patterning process associated with the formation of the first electrode are performed once, and the resonance length is set to a different value among the three types of light emitting pixels. it can. Therefore, in such a light emitting device, the cost of forming the first electrode is reduced, and damage to the light reflecting layer or the semi-reflective layer is suppressed, and each of the three types of light emitting pixels is different. Light in the wavelength range can be emphasized.

[Application Example 15]
In the above light-emitting device, the three types of light-emitting pixels are configured by layers having the same material and thickness except for the presence or absence of the transparent resin layer and the thickness of the transparent resin layer. Light-emitting device.

  With the light emitting device having such a configuration, light in different wavelength ranges can be emphasized in each of the three types of light emitting pixels while reducing the manufacturing cost.

  Hereinafter, embodiments of a light emitting device and a method for manufacturing the light emitting device will be described with reference to the drawings. In the drawings shown below, the dimensions and ratios of the components are appropriately different from the actual ones in order to make the components large enough to be recognized on the drawings.

(First embodiment)
<A. Configuration of organic EL device>
FIG. 1 is a circuit configuration diagram showing an overall configuration of an organic EL device 1 as a light emitting device that is an object of the manufacturing method of the present embodiment. The organic EL device 1 is an active matrix organic EL device that individually controls light emission of the organic EL pixels 20 as a plurality of light emitting pixels regularly arranged in the display region 100 to form an image in the display region. It is. The organic EL device 1 is a top emission type organic EL device that emits light from the second electrode side, but the bottom emission type organic EL device is the same in circuit configuration.

  The organic EL device 1 includes a display area 100 and a peripheral area. In the display area 100, a plurality of scanning lines 102 extending in the X direction, a plurality of signal lines 104 extending in the Y direction, and a plurality of capacitance lines 106 extending in the Y direction are formed. Yes. A rectangular area in which the X direction is defined by the signal line 104 and the capacitor line 106 and the Y direction is defined by the center line of the scanning line 102 is a pixel region 101.

  In each pixel region 101, a switching TFT (thin film transistor) 108, which is a component constituting the organic EL pixel 20, a scanning signal is supplied to the gate electrode via the scanning line 102, and a signal is transmitted via the switching TFT 108. A storage capacitor 110 that holds a pixel signal supplied from the line 104, a driving TFT 112 as a driving element to which a pixel signal held by the storage capacitor 110 is supplied to the gate electrode, and a capacitor line 106 via the driving TFT 112 A pixel electrode 25 (see FIG. 2) from which a drive current flows is formed. The pixel is a functional concept including the above-described components, and the pixel area 101 is a planar concept that regularly partitions the display area 100.

  A scanning line driving circuit 120 and a signal line driving circuit 130 are formed in an area around the display area 100. The scanning line driving circuit 120 sequentially supplies scanning signals to the scanning line 102 in accordance with various signals supplied from an external circuit (not shown). The signal line driver circuit 130 supplies an image signal to the signal line 104. A pixel driving current is supplied to the capacitor line 106 from an external circuit (not shown). The operation of the scanning line driving circuit 120 and the operation of the signal line driving circuit 130 are synchronized with each other by a synchronization signal supplied from an external circuit via the synchronization signal line 140.

  When the scanning line 102 is driven and the switching TFT 108 is turned on, the potential of the signal line 104 at that time is held in the holding capacitor 110, and the level of the driving TFT 112 is determined according to the state of the holding capacitor 110. Then, a driving current flows from the capacitor line 106 to the pixel electrode 25 (see FIG. 2) via the driving TFT 112, and the organic EL pixel 20 emits light according to the magnitude of the driving current.

  The organic EL pixel 20 includes a red organic EL pixel 20R as a red light emitting pixel defined by the color of emitted light, a green organic EL pixel 20G as a green light emitting pixel, and a blue organic EL pixel 20B as a blue light emitting pixel. There are three types. The organic EL pixel 20 is a general term for the above three types of organic EL pixels. Similarly, for other names (such as “resonance length”), when the symbols R, G, and B are deleted, they are generic names of the three types.

  As will be described later, the organic EL device 1 of the present embodiment emits the above three types of light by emphasizing light in a specific wavelength range by resonance of light emission obtained from a common light emitting functional layer. Yes. A color image is formed in the display area 100 by each of the independently controlled organic EL pixels 20 emitting one of the three primary colors of red, green, and blue according to the magnitude of the drive current. Instead of using a common light emitting functional layer, a different light emitting functional layer may be formed for each of the three types of organic EL pixels. Such an aspect will be described in Modification 3 described later. Note that the order of arrangement of the organic EL pixels 20R, 20G, and 20B is not limited to the order shown in FIG. 1, and it is also possible to arrange them in the order of R, B, and G.

  Next, a planar aspect of each element constituting the pixel in the pixel region 101 will be described. FIG. 2 is a plan view schematically showing the arrangement of each element constituting one pixel in the pixel region 101. 3 shows a total of three types of organic EL pixels 20 including a red organic EL pixel 20R, a green organic EL pixel 20G, and a blue organic EL pixel 20B, which are formed adjacent to each other in the X direction. Since the planar configuration is not related to the color of the emitted light, the three types of pixels will be described below without distinction.

  As shown in the figure, the pixel region 101 is partitioned by the scanning line 102 in the X direction and partitioned by the signal line 104 and the capacitor line 106 in the Y direction. In each pixel region 101, a light emitting region 19 that is a region from which light is emitted is formed. In the light emitting region 19, a pixel electrode (anode) 25 as a first electrode (to be described later), a light emitting functional layer 26 (see FIG. 9), and a cathode 27 (see FIG. 9) as a second electrode are provided on the substrate 10 (see FIG. 9). 9 reference) are laminated in order from the side.

A region other than the light emitting region 19 in the pixel region 101 is covered with a partition wall 77 (see FIG. 8A). Therefore, like the organic EL device 1 according to the present embodiment, when the pixel electrode 25 is larger than the light emitting region 19 in plan view, an annular region in which the pixel electrode 25 and the partition wall 77 overlap each other around the light emitting region 19. Is formed.
The light emitting area 19 is an area that actually emits light, and is a partial area in the pixel area 101. A region in which a partition wall 77 (see FIG. 8A) to be described later is formed is included in the pixel region 101 but not in the light emitting region 19. Further, the areas of the light emitting regions 19 of the three types of organic EL pixels (20R, 20G, 20B) are not limited to the same.

  The driving TFT 112 includes a first semiconductor layer 31, a first gate electrode 33 formed by patterning the same layer as the scanning line 102, and the like. A region where the first semiconductor layer 31 and the first gate electrode 33 overlap is a channel region, and a source region 35 and a drain region 36 are formed on both sides of the channel region. The source region 35 is connected to the protruding portion of the capacitor line 106 through the third contact hole 53.

  The drain region 36 is formed in the first contact hole 51, the first relay electrode 41 as the electrode of the driving TFT 112, and the formation region of the second contact hole 52 as the contact hole (hereinafter, “ It is connected to the pixel electrode 25 via a contact cap 22 formed in a region including a contact hole forming region and a ring-shaped region having a slight width surrounding the region. In the organic EL device 1 of the present embodiment, the first contact hole 51 and the second contact hole 52 overlap in plan view. Further, the first relay electrode 41 and the contact cap 22 overlap each other in plan view.

  Here, the contact hole formation region is a region that reliably includes the second contact hole 52 in a plan view in consideration of misalignment. When the misalignment is 0, the contact hole formation region overlaps with the second contact hole 52 in plan view. When the misalignment is not 0, the contact hole forming region includes an annular region surrounding the second contact hole 52 and having the same (value) width as the misalignment value. The contact cap 22 is formed so as to include a contact hole forming region 23 (see FIG. 3) in plan view.

  FIGS. 3A to 3C show examples of the shape of the contact cap 22. The contact cap 22 shown in FIG. 3A is formed so as to slightly include the periphery of the contact hole forming region 23, similarly to the contact cap 22 shown in FIG. The shape of the contact hole formation region 23 in plan view is a shape obtained by adding an annular region having the same width as the alignment deviation value to the second contact hole 52, and the shape of the contact cap 22 in plan view is substantially the same as the shape. It is the shape which added the annular area of the width.

  The shape of the contact cap 22 in plan view shown in FIG. 3B is a shape with a sufficient margin for the same contact hole forming region 23 as that shown in FIG. The light emitting region 19 has a predetermined interval, and the liquid material containing a transparent resin, which will be described later, is supplied onto the light reflecting layer 21 that overlaps the light emitting region 19 in the step of supplying the liquid material (third step). It is avoided that the liquid material flows out to the contact cap 22. The shape of the contact cap 22 shown in FIG. 3C in plan view is further enlarged from that shown in FIG. 3B and extended to a region overlapping the first gate electrode 33. However, the light emitting region 19 has a similar interval.

The switching TFT 108 shown in FIG. 2 includes a second semiconductor layer 32, a second gate electrode 34 from which a part of the scanning line 102 protrudes, and the like. A region where the second semiconductor layer 32 and the second gate electrode 34 overlap is a channel region. A source region 37 and a drain region 38 are formed on both sides of the channel region. The drain region 38 is connected to the signal line 104 through the fourth contact hole 54. The source region 37 is connected to the second relay electrode 42 through the fifth contact hole 55. One end of the second relay electrode 42 is connected to the first gate electrode 33 via the sixth contact hole 56, and the other end is connected to the scanning line 102 via the seventh contact hole 57. Are connected to a lower electrode 43 formed by patterning the same layer. The lower electrode 43 forms a storage capacitor 110 with the first interlayer insulating layer 71 (see FIG. 4) and the upper electrode 44 projecting from the capacitor line 106.
In FIG. 2, the light emitting functional layer 26 (see FIG. 8) and the like are not shown. Hereinafter, the manufacturing method of the organic EL device as the light emitting device of the present embodiment will be described with reference to cross-sectional views taken along lines AA ′, BB ′, and CC ′ shown in FIG. 2.

<B. Manufacturing method of organic EL device>
4A to 10 are process cross-sectional views illustrating a method for manufacturing the organic EL device 1 of the present embodiment. The manufacturing method of the organic EL device 1 according to the present embodiment is characterized in the steps until the pixel electrode 25 is formed in the light emitting region 19. Therefore, in FIGS. 4A to 10, the red organic EL pixel 20 </ b> R and the cross section taken along the line AA ′ of the driving TFT 112 that drives the red organic EL pixel, the green organic EL pixel 20 </ b> G, and the green organic EL pixel are illustrated. Sectional drawing which connected the cross section in the BB 'line of the driving TFT112 which drives this, and the cross section in the CC' line of the driving TFT112 which drives this blue organic EL pixel 20B and this blue organic EL pixel. The switching TFT 108 and the storage capacitor 110 are not shown. Further, the light emitting area 19 is given any one of the red light emitting area 19R, the green light emitting area 19G, and the blue light emitting area 19B depending on the light emission color. Hereinafter, the process will be described with reference to the process cross-sectional views of FIGS.

  First, as shown in FIG. 4A, a driving TFT 112 is formed on the substrate 10 by a known technique as a ninth step. Similarly, a switching TFT (not shown) 108 (see FIG. 2) and a lower electrode 43 (see FIG. 2) of the storage capacitor 110 are also formed. The driving TFT 112 includes a first semiconductor layer 31 including a source region 35 and a drain region 36, a gate insulating layer 70, and a gate electrode 33. As described above, since the organic EL device 1 is a top emission type, the substrate 10 does not particularly need transparency.

  Next, a first interlayer insulating layer 71 made of silicon oxynitride or the like is formed on the entire surface of the substrate 10 on which the driving TFTs 112 and the like are formed. Then, a part of the interlayer insulating layer is selectively removed by a photolithography method, and a part of the surface of the third contact hole 53 and the drain region 36 exposing the part of the surface of the source region 35 is exposed. A first contact hole 51 is formed. In this process, fourth to seventh contact holes (54, 55, 56, and 57) (not shown) are also formed at the same time.

Then, a conductive material layer such as Al formed on the entire surface of the substrate 10 is patterned (formed and the conductive material layer is patterned) to form a first relay electrode 41 as an electrode of the driving TFT 112. Through the above patterning, the capacitor line 106, the second relay electrode 42 (see FIG. 2), and the signal line 104 (see FIG. 2) are also formed at the same time. A part of the capacitor line 106 is embedded in the third contact hole 53 as shown in the figure, and is electrically connected to the source region 35.
Further, as a first step, a planarizing layer 73 as an organic material layer made of acrylic is formed on the entire surface of the substrate 10 on which the first relay electrode 41 and the like are formed. The material for forming the planarization layer 73 must be organic and have insulating properties. In addition to acrylic, for example, polyimide may be used.

  Then, as a tenth step, a part of the planarizing layer 73 is selectively removed by photolithography to expose a part of the first relay electrode 41 connected to the drain region 36 of the driving TFT 112. A second contact hole 52 as a hole is formed.

  Next, as shown in FIG. 4B, an ITO (indium oxide / tin alloy) layer 62 having a thickness of 10 nm as an adhesion improving layer on the entire surface of the substrate 10 and a layer thickness of 80 nm as a conductive material. An Al (aluminum) layer 63 as a metal layer is sequentially formed (laminated). Since the laminated body of the ITO layer 62 and the Al layer 63 becomes the light reflection layer 21 (see FIG. 5A) by patterning as described later, it does not have transparency (transparency) and faces the substrate 10. It is necessary that the surface on the opposite side to the light-receiving side has high light reflectivity. Al becomes semi-reflective when deposited very thinly, but if it is 80 nm, it hardly transmits light and can be used as a light reflecting layer.

Here, “having light reflectivity” is not limited to the meaning of reflecting 100% of the irradiated light. The meaning of reflecting (having a function) at least 60% of the irradiated light, preferably 80%, particularly preferably about 100% is also included. Light that is not reflected may be transmitted, absorbed and dissipated as heat.
Similarly, “transparency (having)” is not limited to the meaning of transmitting substantially 100% of the irradiated light. The meaning of transmitting (having a function) at least 60%, preferably 80%, particularly preferably about 100% of the irradiated light is also included. Light that is not transmitted may be reflected, absorbed and dissipated as heat.
Furthermore, the semi-reflectivity described later is not limited to the meaning of reflecting 50% of the irradiated light. The meaning of reflecting (having a function) 30% to 70%, preferably 40% to 60%, particularly preferably about 50% of the irradiated light is also included. All light that is not reflected is preferably transmitted, but some (of the non-reflected light) may be absorbed and dissipated as heat.

  The material for forming the layer that becomes the light reflection layer 21 by patterning is not limited to Al, and other metals such as Ag (silver), Al alloys, or the like may be used. The ITO layer 62 is formed in order to improve the adhesion between the planarizing layer 73 made of an organic material and the Al layer 63, but is not essential in the embodiment of the present invention. In the embodiment of the present invention, a contact cap 22 (see FIG. 5A) described later is not an essential requirement. When the contact cap is not formed, the light reflection layer 21 only needs to have reflectivity, and it is not essential to have conductivity. Therefore, in such a case, a light-reflective material having almost no electrical conductivity, such as a metal oxide, can be used as a material for forming the layer that becomes the light-reflective layer 21. In the drawings shown below, the ITO layer 62 is not shown. Therefore, the light reflection layer 21 formed by patterning the above-described laminate is illustrated as being composed of a single layer of the Al layer 63.

  Next, as shown in FIG. 5A, as a second step, the laminate of the ITO layer 62 and the Al layer 63 is patterned to form the light reflecting layer 21 in the light emitting region 19, and at the same time, at least the contact hole A contact cap 22 is formed in a region including a formation region 23 (see FIG. 3) and having a predetermined distance from the light emitting region 19.

  As described above, the contact hole formation region 23 is a region that surely includes the second contact hole 52 in a plan view in consideration of misalignment, and has a narrow width that surrounds the second contact hole 52. It is an area including an annular area. The purpose of forming the contact cap 22 is to reduce the connection resistance between the first relay electrode 41 connected to the drain region 36 and the pixel electrode 25. Accordingly, the shape of the contact cap 22 is not limited to the contact hole forming region 23 as long as a predetermined interval is provided between the contact cap 22 and the light reflecting layer 21.

Next, as shown in FIG. 5B, as an eleventh step, the entire surface of the substrate 10 is subjected to plasma treatment using O ₂ gas plasma A as an oxygen-containing gas and CF ₄ gas plasma B serving as fluorine-containing gas. Plasma treatment is continuously performed. By such treatment, the residue attached in the photolithography process or the like is removed by oxidation on the surface of the light reflection layer 21 and the contact cap 22 and cleaned. Accordingly, lyophilicity is imparted to the surfaces of the light reflecting layer 21 and the contact cap 22. On the other hand, the surface of the region where the laminate of the ITO layer 62 and the Al layer 63 is selectively removed in the fifth step and the planarizing layer 73 made of an organic material is exposed is included in the organic material. Carbon atoms combine with fluorine atoms contained in the plasma B. As a result, liquid repellency is imparted to the surface of the region.

Next, as shown in FIG. 6A, from the nozzle 81 of the ink jet apparatus (not shown) as a third step, on the light reflecting layer 21 in the red light emitting region 19R and on the light reflecting layer 21 in the green light emitting region 19G. Then, the liquid material C containing transparent resin is discharged. It does not discharge onto the contact cap 22. Moreover, it does not discharge on the light reflection layer 21 in the blue light emitting region 19B.
Here, the liquid material containing a transparent resin is a liquid material from which a transparent resin can be obtained after curing. Therefore, in addition to a liquid containing a transparent resin itself such as acrylic, methacrylic, epoxy and the like, a precursor of the transparent resin and a liquid containing the precursor (for example, a solution containing the precursor as a solute) are also applicable. In addition, “containing liquid” includes both a solution that dissolves the transparent resin or the like as a solute, and a dispersion in which the transparent resin or the like is dispersed. Furthermore, an intermediate liquid between “solution” and “dispersion” is also included.

Since the surface of the light reflecting layer 21 is made lyophilic by the third step, the liquid material (hereinafter referred to as “liquid material”) C containing the discharged transparent resin is the entire area on the light reflecting layer 21. Spread almost uniformly. On the other hand, since the surface of the region around the light reflecting layer 21 where the planarizing layer 73 is exposed is given liquid repellency, the liquid material C does not flow out to the region.
The surface of the contact cap 22 is also given lyophilicity in the sixth step. However, since the contact cap 22 and the light reflecting layer 21 are separated by the planarizing layer 73 having a liquid repellent surface, the liquid material C does not flow out to the contact cap 22. Accordingly, the liquid material C remains on the light reflecting layer 21.

  Next, as shown in FIG. 6 (b), the liquid material C is cured as a fourth step, on the light reflecting layer 21 in the red light emitting region 19R and on the light reflecting layer 21 in the green light emitting region 19G. A transparent resin layer 79 is formed. The thickness of the transparent resin layer 79 is 115 nm in the red light emitting region 19R and 45 nm in the green light emitting region 19G. In the seventh step, the discharge amount of the liquid material C is set so that the layer thickness after curing becomes the above value. In addition, said hardening is performed by methods, such as a heating or ultraviolet irradiation.

  Next, as shown in FIG. 7A, as a fifth step, an ITO layer 65 having a layer thickness of 30 nm as a transparent conductive material is formed on the entire surface of the substrate 10. The formation is preferably performed by sputtering or vapor deposition.

  Next, as shown in FIG. 7B, as a sixth step, the ITO layer 65 is patterned so as to straddle the light reflecting layer 21 and the contact cap 22 to form the pixel electrode 25 as the first electrode. To do. As described above, the contact cap 22 is connected to the drain region 36 of the driving TFT 112 via the first relay electrode 41, and the transparent resin layer 79 is not formed on the contact cap. Therefore, the pixel electrode 25 is electrically connected to the drain region 36 of the driving TFT 112 in the contact hole forming region 23.

  Next, as shown in FIG. 8A, a partition wall 77 is formed in a region excluding the light emitting region 19 on the substrate 10. The partition wall 77 is formed by patterning an organic or inorganic insulating material layer material layer such as polyimide formed on the entire surface of the substrate 10 by a photolithography method.

  Next, as shown in FIG. 8B, a light emitting functional layer 26 is formed on the entire surface of the substrate 10 as a seventh step, and further a semi-reflective second layer is formed on the light emitting functional layer as an eighth step. A cathode 27 is formed as an electrode.

  The light-emitting functional layer 26 formed in the organic EL device 1 of the present embodiment is a white light-emitting functional layer that emits light that substantially includes visible light of all wavelengths, and is common to the three types of organic EL pixels 20. Formed. Each organic EL pixel 20 emphasizes light in a specific wavelength range due to resonance, and further emits with improved color purity by a color filter layer 76 described later.

  The light emitting functional layer 26 includes a plurality of layers (not shown). Specifically, a hole injecting and transporting layer, a light emitting layer (organic EL layer), an electron transporting layer, and an electron injecting layer are laminated in order from the substrate 10 side, and the total layer thickness is 195 nm. Each of the above layers is formed by vacuum deposition or sputtering. As described above, a mask or the like is not used, and the same layer is formed on the entire surface of the substrate 10. When it is difficult to emit white light using a single material layer, the light emitting layer may be a laminate of two or more types of material layers. In the organic EL device 1 of the present embodiment, the following materials are used for each layer.

  The hole injection transport layer is formed by stacking HI406 (made by Idemitsu Kosan Co., Ltd.) as a hole injection layer and HT320 (made by Idemitsu Kosan Co., Ltd.) as a hole transport layer. The light emitting layer is a laminate of a blue-green light emitting layer and a red light emitting layer. The blue-green light emitting layer is formed of a material obtained by adding BD102 made by Idemitsu Kosan Co., Ltd. as a dopant to BH215 made by Idemitsu Kosan Co., Ltd. as a host material. The red light emitting layer is formed of a material obtained by adding RD001 manufactured by Idemitsu Kosan Co., Ltd. as a dopant to BH215 manufactured by Idemitsu Kosan Co., Ltd. as a host material. The electron transport layer is formed of Alq3 (aluminum quinolinol), and the electron injection layer is formed of LiF (lithium fluoride).

  The cathode 27 is formed by depositing a MgAg (magnesium / silver) alloy or the like having a layer thickness of 12.5 nm by a sputtering method or the like. By forming the above material in such a layer thickness, an electrode having semi-reflectivity can be formed. Unlike the pixel electrode 25, the cathode 27 has the same potential throughout the display region 100. Note that, after forming the film with the above layer thickness, a thick film portion may be formed on the partition wall 77 using a mask to avoid the light emitting region 19. The resistance per unit area can be reduced while maintaining the semi-reflectivity in the light emitting region 19.

Next, as shown in FIG. 9, a first passivation layer 85, a stress relaxation layer 86, and a second passivation layer 87 are sequentially stacked on the entire surface of the substrate 10 on which the cathode 27 is formed. The first passivation layer 85 is formed of SiO _{2 having} a thickness of 200 nm, the stress relaxation layer 86 is formed of acrylic resin having a thickness of 2000 nm, and the second passivation layer 87 is formed of SiO ₂ having a thickness of 400 nm. By laminating such material layers, infiltration of moisture and the like can be suppressed, and deterioration of the organic EL pixel 20 in the completed organic EL device 1 can be suppressed.

Next, as shown in FIG. 10, as a twelfth step, the counter substrate 12 having the color filter layer 76 formed on the substrate 10 is bonded through an adhesive layer 78 made of acrylic resin or the like, and light is emitted in the direction of the arrow. The top emission type organic EL device 1 for injecting is completed. The color filter layer 76 defines a red color filter 75R corresponding to the red light emitting region 19R, a green color filter 75G corresponding to the green light emitting region 19G, a blue color filter 75B corresponding to the blue light emitting region 19B, and each color filter. It consists of a black matrix 75K.
The color filter layer 76 is not essential in the embodiment of the present invention, but further improves the color purity of light emitted in a different color (wavelength range) for each organic EL pixel due to resonance described later. Can do.

  Through the above steps, the resonance length 7 which is the optical distance between the interface (surface) on the light emitting functional layer side of the light reflecting layer 21 and the interface (surface) on the light emitting functional layer side of the cathode 27 is changed to three types of organic substances. The organic EL device 1 having different values for each EL pixel 20 can be obtained. That is, in the organic EL device 1, since the red organic EL pixel 20R and the green organic EL pixel 20G include the transparent resin layer 79 between the light reflection layer 21 and the pixel electrode 25, the resonance of the red organic EL pixel 20R. The length 7R, the resonance length 7G of the green organic EL pixel 20G, and the resonance length 7B of the blue organic EL pixel 20B are set to different values. The resonance length can be emitted after emphasizing light in a different wavelength range for each organic EL pixel 20. Therefore, although the white light emitting functional layer is used for the light emitting functional layer 26, in combination with the effect of the color filter layer 76, light of the three primary colors of red, green, and blue can be emitted to perform color display. .

  Further, in the organic EL device 1, the setting of the resonance length 7, that is, the means for setting the resonance length 7 different among the three types of organic EL pixels 20 is only the formation of the transparent resin layer 79. That is, the elements other than the transparent resin layer 79 formed on the substrate 10 are the same among the three types of organic EL pixels 20. The transparent resin layer 79 is formed using an ink jet apparatus without using a photolithography method. Therefore, the organic EL device capable of setting a different resonance length 7 between the organic EL pixels 20 and performing color display using the white light emitting functional layer while suppressing an increase in cost and a decrease in yield through the above steps. 1 can be obtained.

The above-described resonance length is set based on the following equation.
2 × resonance length (7R, 7G, 7B) + φ2 + φ3 = mλ (1)
Here, φ2 = phase difference at the light emitting functional layer 26 side interface of the light reflecting layer 21,
φ3 = phase difference at the light emitting functional layer 26 side interface of the cathode 27,
And m is a positive integer.
φ2 and φ3 vary depending on the refractive index and extinction coefficient of the pixel electrode 25 and the transparent resin layer 79. Therefore, it is necessary to optimize the resonance length 7 in accordance with the material for forming the pixel electrode 25 and the like each time. Since the layer thickness of the transparent resin layer 79 can be continuously set (adjusted) by controlling the discharge amount of the liquid material C, according to the manufacturing method of the present embodiment, the optimum resonance length 7 is always set, The organic EL device 1 with improved display quality can be obtained.

(Second Embodiment)
Then, the manufacturing method of the organic EL apparatus 2 is demonstrated as 2nd Embodiment. FIG. 11A to FIG. 15 are process cross-sectional views illustrating the method for manufacturing the organic EL device 2 of the present embodiment. The organic EL device 2 that is the object of the manufacturing method of the present embodiment is a bottom emission type organic EL device that emits light from the transparent substrate 11 side (the pixel electrode 25 side as the first electrode). The organic EL device 1 according to the first embodiment is different only in the light emission direction, and the circuit configuration is the same. Therefore, a circuit diagram and a plan view will be omitted, and description will be made using only process cross-sectional views. Moreover, the same code | symbol is provided to the component which is common in the organic EL apparatus 1 concerning 1st Embodiment, and description of description is partially abbreviate | omitted.

  First, as shown in FIG. 11A, as a ninth step, a driving TFT 112 is formed on the transparent substrate 11 by a known technique. At the same time, a switching TFT 108 (see FIG. 2) (not shown) is formed. Since the organic EL device 2 is a bottom emission type, the substrate (transparent substrate 11) on which TFTs and the like are formed needs to be transparent.

  Next, a first interlayer insulating layer 71 made of silicon oxynitride or the like is formed on the entire surface of the transparent substrate 11 on which the driving TFT 112 is formed. Then, a part of the first interlayer insulating layer is selectively removed by a photolithography method to expose a part of the surface of the source region 35 and a part of the surface of the drain region 36. A first contact hole 51 is formed to expose.

  Then, a conductive material layer such as Al formed on the entire surface of the transparent substrate 11 is patterned to form the first relay electrode 41 as an electrode. Through the above patterning, the capacitor line 106 and the like are formed at the same time. A part of the capacitor line 106 is buried in the third contact hole 53 as shown in the figure to obtain electrical continuity. Further, a second interlayer insulating layer 72 made of silicon oxynitride or the like is formed on the entire surface of the transparent substrate 11 on which the first relay electrode 41 and the like are formed.

  Next, as shown in FIG. 11B, as a thirteenth step, a color filter 75 that matches the emission color is formed in a region including the emission region 19 on the second interlayer insulating layer 72 in plan view. Form. That is, a red color filter 75R is formed in the red light emitting region 19R, a green color filter 75G is formed in the green light emitting region 19G, and a blue color filter 75B is formed in the blue light emitting region 19B.

  Next, as shown in FIG. 12A, the entire surface of the transparent substrate 11 on which the color filters (75R, 75G, 75B) are formed is made of a transparent organic material such as acrylic as a first step. A transparent flattening layer 74 as an organic material layer is formed. As a tenth step, a part of the transparent planarization layer 74 is selectively removed by a photolithography method, and a part of the first relay electrode 41 is exposed to expose the second contact hole 52 as a contact hole. Form.

  Next, as shown in FIG. 12B, an ITO layer (not shown) having a thickness of 10 nm as an adhesion improving layer and an Al layer 66 having a thickness of 10 nm as a metal layer are formed on the entire surface of the transparent substrate 11. Form. The Al layer generally has light reflectivity, but can be formed as a conductive and semi-reflective layer by forming a film as thin as 10 nm. Since the ITO layer has conductivity and transparency, the above-described laminate of the ITO layer and the Al layer 66 has both semi-reflectivity and conductivity. In addition, although the above-mentioned ITO layer is formed in order to improve the adhesiveness between the transparent planarization layer 74 and the Al layer 66, in the embodiment of the present invention, like the ITO layer 62 in the first embodiment. It is not essential.

  Next, as shown in FIG. 13A, as a second step, a laminate of an ITO layer (not shown) and an Al layer 66 is patterned to form a semi-reflective layer 29 in the light emitting region 19. At the same time, the contact cap 30 is formed in a region including at least the contact hole forming region 23 (see FIG. 3) and having a predetermined distance from the light emitting region 19.

Similar to the first embodiment described above, the contact hole formation region 23 is a region that surely includes the second contact hole 52 in plan view in consideration of misalignment, and is around the second contact hole 52. Is a region including an annular region having a narrow width. The purpose of forming the contact cap 30 is to reduce the connection resistance between the first relay electrode 41 connected to the drain region 36 and the pixel electrode 25. Therefore, the shape of the contact cap 30 is not limited to the contact hole formation region 23 as long as a predetermined interval is provided between the contact cap 30 and the semi-reflective layer 29. Then, after the above patterning, as the eleventh step as in the first embodiment, the plasma treatment using the O ₂ gas plasma and the plasma treatment using the CF ₄ gas plasma are continuously performed, The lyophilic property is imparted to the surface of the contact cap 30, and the lyophobic property is imparted to the exposed surface of the transparent planarizing layer 74.

  Next, as shown in FIG. 13B, a transparent resin layer 79 is formed on the semi-reflective layer 29 formed in the red light-emitting region 19R and on the semi-reflective layer 29 formed in the green light-emitting region 19G. . The transparent resin layer 79 is formed in the same manner as in the first embodiment. That is, the liquid material C (including the transparent resin) discharged by the ink jet method on the two semi-reflective layers 29 as the third step is cured by heating or ultraviolet irradiation as the fourth step. The layer thickness of the transparent resin layer 79 is 115 nm in the red light emitting region 19R and 45 nm in the green light emitting region 19G, as in the organic EL device 1 of the first embodiment.

  Next, as shown in FIG. 14, a pixel electrode 25 as a first electrode is formed across the semi-reflective layer 29 and the contact cap 30. The pixel electrode 25 is formed in the same way as in the first embodiment. That is, an ITO layer having a thickness of 30 nm formed on the entire surface of the transparent substrate 11 as a fifth step is formed by patterning so as to straddle the semi-reflective layer 29 and the contact cap 30 as a sixth step. Through this process, the contact hole forming region 23 is electrically connected to the drain region 36 of the driving TFT 112, and the light emitting region (other than the blue light emitting region 19B) faces the semi-reflective layer 29 through the transparent resin layer 79. A pixel electrode 25 is obtained.

  Next, as shown in FIG. 15, a partition wall 77 is formed in a region excluding the light emitting region 19 on the transparent substrate 11. Then, a light emitting functional layer 26 is formed on the entire surface of the transparent substrate 11 as a seventh step, and further, a cathode 28 as a second electrode having reflectivity is formed on the light emitting functional layer as an eighth step. The organic EL device 2 of the present embodiment is a bottom emission type, and the cathode needs to function as a reflective layer. Therefore, the cathode 28 is made of Al having a layer thickness of approximately 100 nm and imparts approximately 100% reflectivity. The light emitting functional layer 26 has the same configuration as the light emitting functional layer of the organic EL device 1.

Then, the first passivation layer 85, the stress relaxation layer 86, and the second passivation layer 87 are sequentially stacked on the cathode 28, as in the first embodiment. Then, the transparent substrate 11 formed up to the second passivation layer 87 is bonded to the counter substrate 13 through the adhesive layer 78 to obtain the organic EL device 2. Unlike the counter substrate 12 used in the organic EL device 1, the counter substrate 13 can be a substrate made of a material that does not have transparency.
Through the above steps, in each of the three types of organic EL pixels (20R, 20G, 20B), the light generated in the light emitting functional layer 26 is resonated between the cathode 28 and the semi-reflective layer 29, and then the semi-reflective The bottom emission type organic EL device 2 that emits in the direction of the arrow through the layers and the color filters 75 (R, G, B) is obtained.

In the organic EL device 2 according to the present embodiment, since the red organic EL pixel 20R and the green organic EL pixel 20G include the transparent resin layer 79 between the semi-reflective layer 29 and the pixel electrode 25, the red organic EL pixel The resonance length 7R of 20R, the resonance length 7G of the green organic EL pixel 20G, and the resonance length 7B of the blue organic EL pixel 20B are set to different values. Therefore, the organic EL device 2 is combined with the effect of the color filter 75 in spite of using the white light-emitting functional layer for the light-emitting functional layer 26 in the same manner as the organic EL device 1 according to the first embodiment. Can emit light of the three primary colors red, green and blue. Therefore, according to the manufacturing method of the present embodiment, it is possible to obtain a bottom emission type organic EL device capable of color display while suppressing an increase in cost and a decrease in yield.
The setting of the resonance length 7 (R, G, B) is the same as the manufacturing method of the first embodiment described above.

(Third embodiment)
Subsequently, as a third embodiment, an organic EL device in which a light emitting region 19 is formed so as to overlap with a region where a driving element is formed will be described. FIG. 16 is a plan view showing aspects of the pixel electrode 25 in the pixel region 101 and the light emitting region 19 of the organic EL device of the present embodiment, and illustration of the driving TFT 112 (see FIG. 2 and the like) is omitted. ing.

  The organic EL device of this embodiment is a top emission type organic EL device similar to the organic EL device 1 of the first embodiment. The basic configuration is the same as that of the organic EL device 1. The organic EL device 1 is different from the organic EL device 1 in that the region where the organic EL pixel 20 is formed, that is, the light emitting region 19 extends to the formation region (see FIG. 2) of the driving TFT 112 and the like.

  As shown in FIG. 16, in the organic EL device of the present embodiment, the contact cap 22 is formed in a region including the formation region of the second contact hole 52, similarly to the organic EL device 1. The light emitting region 19 (R, G, B) is in almost the entire region except the region where the contact cap 22 is formed and the surrounding region in the region surrounded by the scanning line 102, the signal line 104, and the capacitor line 106. Is formed. A light reflecting layer 21 (not shown) is formed in each light emitting region 19, and a transparent resin layer 79 (not shown) is formed in the red light emitting region 19R and the green light emitting region 19G. In addition, the pixel electrode 25 is also formed in substantially the entire region surrounded by the scanning line 102, the signal line 104, and the capacitor line 106 in accordance with the light emitting region 19.

  Since the level difference caused by the driving TFT 112 and the like is eliminated by the flattening layer 73, the flat light reflection layer 21 and the like can be formed in the entire region, and the transparent resin layer 79 can optimize the resonance in each light emitting region 19 respectively. A length 7 (R, G, B) is formed. Since it is a top emission type, light can be emitted from the light emitting region 19 without being obstructed by the driving TFT 112 or the like. Therefore, the organic EL device of this embodiment can emit light with improved color purity with a high aperture ratio, and display quality is further improved.

(Modification 1)
In the organic EL devices of the above first to third embodiments, the transparent resin layer 79 is not formed on the blue organic EL pixel 20B. However, the present invention can be embodied as an aspect in which the transparent resin layer 79 is formed also on the blue organic EL pixel 20B. In the blue organic EL pixel 20B of the first to third embodiments described above, the total of the optical distance of the pixel electrode 25 and the optical distance of the light emitting functional layer 26 is equal to the resonance length of blue light. It is determined to have a layer thickness that emphasizes blue light by resonance. However, when priority is given to the light emitting function, the total optical distance described above may not easily match the resonance length of blue light. In particular, since the light emitting functional layer 26 is common to the organic EL pixels 20 of the three colors, it may be difficult to set a layer thickness that satisfies all the conditions. In such a case, the transparent resin layer 79 is also formed on the blue organic EL pixel 20B, and the light emitting functional layer 26 is formed so as to satisfy the light emitting function, while the resonance length 7B, that is, the light reflecting layer of the blue organic EL pixel 20B. The optical distance between 21 and the cathode 27 can be a value suitable for enhancing blue light.

(Modification 2)
In the organic EL devices of the first to third embodiments, the transparent resin layer 79 is formed on the red organic EL pixel 20R and the green organic EL pixel 20G. However, the present invention can be embodied as an aspect in which the transparent resin layer 79 is not formed on both or at least one of the two types of organic EL pixels.
There may be a case where the light emission color of the light emitting functional layer 26 is light of a color biased to red or green rather than substantially perfect white. In addition, the sum of the optical distance of the first electrode and the optical distance of the light-emitting functional layer 26 may substantially coincide with the resonance length of either red light or green light. In such an organic EL device, since the resonance length 7 does not need to be adjusted by the transparent resin layer 79, the three primary colors are emitted without forming the transparent resin layer 79 on both or at least one of the two types of organic EL pixels. And a color image can be displayed.

(Modification 3)
In the organic EL devices of the first to third embodiments described above, the first relay electrode 41 formed on the drain region 36 is used as an electrode of a drive element (drive TFT 112), and the same material layer as the light reflecting layer 21 The contact cap 22 obtained by patterning is connected to the first relay electrode. However, the present invention can also be embodied as a mode in which the drain region 36 is used as an electrode of a driving element, and the pixel electrode 25 is connected to the drain region via the contact cap 22. Alternatively, the first interlayer insulating layer 71 and the planarization layer 73 can be used as a common layer, and the drain region 36 and the contact cap 22 can be directly connected through a contact hole formed in the common layer.

(Modification 4)
In the organic EL devices of the first to third embodiments, the light emitting functional layer 26 is common to the organic EL pixels 20 of three colors. However, the present invention can also be embodied as an aspect using a different light emitting functional layer 26 for each organic EL pixel 20. Of the plurality of layers constituting the light emitting functional layer 26, in particular, the light emitting layer may be formed of a different material for each organic EL pixel 20. Specifically, a red light emitting layer is formed on the red organic EL pixel 20R, a green light emitting layer is formed on the green organic EL pixel 20G, and a blue light emitting layer is formed on the blue organic EL pixel 20B. Light in a wavelength range close to the emission color of the pixel is emitted. With such a configuration, it is possible to further improve the color purity in combination with the resonance effect. In addition, an aspect in which the color filter layer 76 is not used is also possible by sufficiently improving the color purity by resonance.
As a method of forming a different light emitting layer for each organic EL pixel, a method of locally forming the light emitting layer by mask sputtering is preferable. A droplet discharge method may be used.

The circuit block diagram which shows the whole structure of the organic electroluminescent apparatus as a light-emitting device. The schematic plan view which shows arrangement | positioning of each element which comprises a pixel in a pixel area. The figure which shows the example of the shape of a contact cap. Process sectional drawing which shows the manufacturing method of the organic electroluminescent apparatus of 1st Embodiment. Process sectional drawing which shows the manufacturing method of the organic electroluminescent apparatus of 1st Embodiment. Process sectional drawing which shows the manufacturing method of the organic electroluminescent apparatus of 1st Embodiment. Process sectional drawing which shows the manufacturing method of the organic electroluminescent apparatus of 1st Embodiment. Process sectional drawing which shows the manufacturing method of the organic electroluminescent apparatus of 1st Embodiment. Process sectional drawing which shows the manufacturing method of the organic electroluminescent apparatus of 1st Embodiment. Process sectional drawing which shows the manufacturing method of the organic electroluminescent apparatus of 1st Embodiment. Process sectional drawing which shows the manufacturing method of the organic electroluminescent apparatus of 2nd Embodiment. Process sectional drawing which shows the manufacturing method of the organic electroluminescent apparatus of 2nd Embodiment. Process sectional drawing which shows the manufacturing method of the organic electroluminescent apparatus of 2nd Embodiment. Process sectional drawing which shows the manufacturing method of the organic electroluminescent apparatus of 2nd Embodiment. Process sectional drawing which shows the manufacturing method of the organic electroluminescent apparatus of 2nd Embodiment. The schematic plan view which shows the light emission area | region etc. of the organic electroluminescent apparatus of 3rd Embodiment.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Organic EL device of 1st Embodiment, 2 ... Organic EL device of 2nd Embodiment, 7 ... Resonance length, 7B ... Resonance length of blue organic EL pixel, 7G ... Resonance length of green organic EL pixel, 7R ... resonance length of red organic EL pixel, 10 ... substrate, 11 ... transparent substrate, 12 ... counter substrate, 13 ... opposite substrate, 19 ... light emitting region, 19R ... red light emitting region, 19G ... green light emitting region, 19B ... blue light emitting region , 20 ... an organic EL pixel as a light emitting pixel, 20R ... a red organic EL pixel as a red light emitting pixel, 20G ... a green organic EL pixel as a green light emitting pixel, 20B ... a blue organic EL pixel as a blue light emitting pixel, 21 ... light Reflective layer, 22 ... contact cap, 23 ... contact hole forming region, 25 ... pixel electrode as first electrode, 26 ... white light emitting functional layer, 27 ... cathode as second electrode, 28 ... second electricity , Semi-reflective layer, 30 ... contact cap, 31 ... first semiconductor layer, 32 ... second semiconductor layer, 33 ... first gate electrode, 34 ... second gate electrode, 35 ... source Region 36, drain region 37, source region 38, drain region 41, first relay electrode as drive element electrode 42, first relay electrode 43, lower electrode 44, upper electrode 51 ... first contact hole, 52 ... second contact hole, 53 ... third contact hole, 54 ... fourth contact hole, 55 ... fifth contact hole, 56 ... sixth contact hole, 57 ... first 7. Contact hole of 62, ITO layer as adhesion improving layer, 63 ... Al layer as metal layer, 65 ... ITO layer, 66 ... Al layer as metal layer, 70 ... Gate insulating layer, 71 ... 1 interlayer insulating layer, 72... Second interlayer insulating layer, 73. Flattening layer as organic material layer, 74... Transparent flattening layer as organic material layer, 75... Color filter, 75 B. blue color filter, 75 G ... green color filter, 75K ... black matrix, 75R ... red color filter, 76 ... color filter layer, 77 ... partition wall, 78 ... adhesive layer, 79 ... transparent resin layer, 81 ... nozzle, 85 ... first passivation layer, 86 DESCRIPTION OF SYMBOLS ... Stress relaxation layer, 87 ... 2nd passivation layer, 100 ... Display area, 101 ... Pixel area, 102 ... Scanning line, 104 ... Signal line, 106 ... Capacitance line, 108 ... Switching TFT, 110 ... Retention capacitance, 112 ... TFT for driving as driving element, 120 ... Scanning line driving circuit, 130 ... Signal line driving circuit, 140 ... Synchronous signal line, A ... As oxygen-containing gas O ₂ gas plasma, B: CF ₄ gas plasma as fluorine-containing gas, C: liquid material containing transparent resin.

Claims (15)

A light-emitting device including a light-emitting pixel having a structure in which a first electrode, a light-emitting functional layer, and a second electrode are stacked in order from the substrate side in each of a plurality of light-emitting regions regularly arranged on a substrate. A manufacturing method comprising:
A second step of forming a light reflecting layer or a semi-reflective layer in the light emitting region;
A third step of supplying a liquid material containing a transparent resin on the light reflection layer or the semi-reflection layer;
A fourth step of curing the liquid material to form a transparent resin layer on the light reflection layer or the semi-reflection layer;
A fifth step of forming a transparent conductive layer on the substrate on which the transparent resin layer is formed;
A sixth step of patterning the transparent conductive layer to form the first electrode in the light emitting region;
A seventh step of forming a light emitting functional layer on the first electrode;
An eighth step of forming the second electrode having light reflectivity or semi-reflectivity on the light emitting functional layer;
A method for manufacturing a light-emitting device, comprising: A method of manufacturing a light emitting device according to claim 1,
The light emitting pixels respectively formed in the plurality of light emitting regions are regularly arranged of a red light emitting pixel that emits red light, a green light emitting pixel that emits green light, and a blue light emitting pixel that emits blue light. A method for manufacturing a light emitting device, comprising: a type of light emitting pixel. A method for manufacturing a light emitting device according to claim 2,
The light reflection layer or the semi-reflection layer is a metal layer,
Performing a first step of forming an organic resin layer on the substrate and a ninth step of forming a driving element corresponding to each of the light emitting pixels on the substrate;
A tenth contact hole is formed between the first step and the second step to selectively remove a part of the organic resin layer to expose at least a part of the electrode of the driving element. Carry out the process,
In the second step, the metal layer is patterned to form the light reflecting layer or the semi-reflective layer in the light emitting region, and the metal layer is patterned to form the light in the contact hole forming region. Forming a contact hole cap spaced apart from the reflective layer or the semi-reflective layer by a predetermined distance;
The sixth step is a step of patterning the transparent conductive layer to form the first electrode straddling two regions of the contact hole forming region and the light emitting region.
A method for manufacturing a light-emitting device. A method for manufacturing a light emitting device according to claim 3,
In the third step, the sum of the optical distance of the transparent resin layer, the optical distance of the transparent conductive layer and the optical distance of the light emitting functional layer formed in the fourth step is the transparent resin. Supplying the liquid material so as to have an optical distance that emphasizes the light emission of the light-emitting pixel in which the layer is formed by resonance generated between the light reflection layer or the semi-reflection layer and the second electrode. A method for manufacturing a light-emitting device. It is a manufacturing method of the light-emitting device according to claim 4,
The third step is a step of supplying the liquid material on the light reflecting layer or the semi-reflective layer corresponding to two types of light emitting pixels among the three types of light emitting pixels,
The seventh step is a step of forming the common light emitting functional layer on the entire surface of the substrate,
In the fifth step and the seventh step, the sum of the optical distance of the transparent conductive layer and the optical distance of the light emitting functional layer is such that the light reflective layer or the semi-reflective layer and the second The transparent conductive layer and the light emitting functional layer are arranged so as to have an optical distance that emphasizes light emission of a light emitting pixel in which the transparent conductive layer is not formed among the three types of light emitting pixels due to resonance with the electrode. A manufacturing method of a light-emitting device, which is a forming step. A method for manufacturing a light emitting device according to claim 5,
The method of manufacturing a light emitting device, wherein the seventh step is a step of forming the light emitting functional layer that emits white light. It is a manufacturing method of the light-emitting device according to claim 6,
The method of manufacturing a light emitting device, wherein the third step is a step of discharging and supplying the liquid material by an ink jet method. It is a manufacturing method of the light-emitting device according to claim 7,
Between the second step and the third step,
Plasma treatment using an oxygen-containing gas as a processing gas and plasma treatment using a fluorine-containing gas as a processing gas are performed on the substrate to impart liquid repellency to the exposed surface of the organic resin layer, and the light reflecting layer or the 11. A method for manufacturing a light emitting device, comprising performing an eleventh step of imparting lyophilicity to a surface of a semi-reflective layer. A method for manufacturing a light emitting device according to claim 8,
The second step is a step of forming a light reflecting layer,
The method of manufacturing a light emitting device, wherein the eighth step is a step of forming the second electrode having semi-reflectivity. A method for manufacturing a light emitting device according to claim 8,
The first step is a step of forming the organic resin layer having transparency,
The second step is a step of forming a semi-reflective layer,
The method of manufacturing a light emitting device, wherein the eighth step is a step of forming the second electrode having light reflectivity.   The light emitting device manufacturing method according to claim 9, wherein colors corresponding to light emission colors of the three types of light emitting pixels are provided on the opposite side of the surface of the second electrode facing the light emitting functional layer. A method for manufacturing a light emitting device, further comprising a twelfth step of arranging a filter.   The method of manufacturing a light-emitting device according to claim 10, wherein the semi-reflective layer on the opposite side of the surface facing the light-emitting functional layer of the semi-reflective layer is viewed in a plan view before the second step. A method of manufacturing a light emitting device, further comprising a thirteenth step of forming a color filter corresponding to each of the light emission colors of the three types of light emitting pixels in a region to be included.   A light-emitting device formed by the manufacturing method according to claim 1. Each of a plurality of light emitting regions regularly arranged on the substrate has three types of light emitting pixels: a red light emitting pixel that emits red light, a green light emitting pixel that emits green light, and a blue light emitting pixel that emits blue light. A light emitting device comprising:
Each of the three types of light emitting pixels has a light reflecting layer or semi-reflective layer, a first electrode having transparent conductivity, a light emitting functional layer, and a second having light reflecting layer property or semi-reflective layer property in order from the substrate side. It has a structure in which electrodes are stacked,
Two of the three types of light emitting pixels are such that a transparent resin layer for adjusting a resonance length is disposed between the light reflecting layer or the semi-reflective layer and the first electrode. A light emitting device characterized. The light-emitting device according to claim 14,
The three types of light emitting pixels are constituted by layers having the same material and thickness except for the presence or absence of the transparent resin layer and the layer thickness of the transparent resin layer.

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