JP2010008945A - Device for manufacturing liquid crystal device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing device, capable of efficiently manufacturing a satisfactory liquid crystal device. <P>SOLUTION: The device for manufacturing a liquid crystal device including a liquid crystal layer held between a pair of opposed substrates and an inorganic alignment film formed between at least one substrate and liquid crystal or the like comprises a film formation chamber; and a sputtering device for forming the inorganic alignment film by depositing an alignment film material on one substrate within the film formation chamber by sputtering. The sputtering device comprises a storage chamber 31 for storing a target, the chamber having an opening connecting with the film formation chamber; and an electron capturing device 36a for capturing electrons contained in the storage chamber 31. The electron capturing device 36a includes a conductive member 362 partially exposed into the storage chamber 31 and a displacement device 360a for changing the exposure part exposed to the storage chamber 31 of the conductive member 362a by displacing the conductive member 362a. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to an apparatus for manufacturing a liquid crystal device.

  Conventionally, liquid crystal devices have been widely used as display units for personal computers, mobile phones, etc., or as light valves for projectors. The liquid crystal device includes, for example, a liquid crystal layer sandwiched between a pixel electrode and a common electrode, an alignment film that controls the alignment of liquid crystal molecules in the liquid crystal layer, and the like. When an electric field is applied to the liquid crystal layer, the azimuth angle of the liquid crystal molecules changes, and the polarization state of light passing through the liquid crystal layer changes. As a result, part of the light that has passed through the liquid crystal layer is absorbed by the polarizing plate, becomes light of a predetermined gradation, and is emitted from the liquid crystal device.

  By the way, as the alignment film, a film obtained by rubbing a polymer film made of polyimide or the like is known. If orientation is imparted by rubbing treatment, an orientation film can be easily formed. However, it is difficult to achieve uniform orientation or partial orientation control, or display defects are likely to occur due to rubbing marks or dust generated from the rubbing cloth, or excessive rubbing treatment. There are problems such as damage to the alignment film and a decrease in yield. In addition, in a device using a high output light source such as a liquid crystal projector, the organic matter such as polyimide is decomposed by the absorption of the light source light and the absorbed heat, which causes the deterioration of the device characteristics and the shortening of the service life. Sometimes it ends up.

  In order to solve such a problem, it is effective to use an alignment film made of an inorganic material (hereinafter referred to as an inorganic alignment film) instead of the alignment film made of an organic material. The inorganic alignment film has a columnar structure inclined with respect to the surface to be processed, and is formed by forming an inorganic material such as silicon oxide on the surface to be processed by a vapor deposition method or a sputtering method. In particular, the sputtering method can form an alignment film having a lower defect density than the vapor deposition method. As a film forming apparatus using a sputtering method, there is one disclosed in Patent Document 1.

The liquid crystal device manufacturing apparatus (film forming apparatus) of Patent Document 1 includes a film forming chamber and a sputtering apparatus connected to the film forming chamber. The sputtering apparatus includes a pair of targets arranged opposite to each other and a plasma generator that generates a plasma by supplying a discharge gas between the pair of targets and discharging the gas. By causing the generated plasma to collide with the target, particles are knocked out of the target. In addition, an electron restraining means for capturing electrons contained in the plasma generation region is provided, and the electron restraining means includes a conductive member that takes in electrons, a magnetic field generating means that controls a track of electrons toward the conductive member, and the like. Yes. Electrons contained in the plasma generation region can be removed by the electron constraining means, and plasma can be generated stably.
JP 2007-286401 A

In the apparatus for manufacturing a liquid crystal device of Patent Document 1, it is considered that a favorable inorganic alignment film can be formed because plasma can be stably generated. However, in order to increase productivity, there are points to be improved as follows.
Since the alignment film is provided in common for the plurality of pixel electrodes, it is usually formed of an insulating material. That is, the sputtering apparatus emits the insulating particles and the ones that become insulating during the film forming process as the sputtered particles as the alignment film material. A part of the released sputtered particles adheres to and covers the surface of the conductive member constituting the electron restraining means. Then, since the surface of the conductive member is insulated, electrons cannot be captured well.

In order to restore the function of the electronic restraint means, it is conceivable that the conductive member may be replaced. However, the film forming chamber is in a vacuum atmosphere while the liquid crystal device manufacturing apparatus is in operation, and it takes a great deal of labor to return it to the atmospheric pressure and perform the maintenance work again to create a vacuum atmosphere. And it takes time. For this reason, the substantial operation time is lowered, and the production efficiency is lowered.
The present invention has been made in view of the above circumstances, and an object thereof is to provide a manufacturing apparatus capable of efficiently manufacturing a good liquid crystal device.

  An apparatus for manufacturing a liquid crystal device of the present invention includes a liquid crystal layer sandwiched between a pair of opposing substrates, and an apparatus for manufacturing a liquid crystal device in which an inorganic alignment film is formed between at least one of the substrates and the liquid crystal or the like And a sputtering apparatus for forming an inorganic alignment film by forming an alignment film material on the one substrate by sputtering in the film formation chamber, and the sputtering apparatus includes: A storage chamber that has an opening that leads to the film formation chamber and stores the target; and an electron capture device that captures electrons contained in the storage chamber, wherein the electron capture device is partially exposed in the storage chamber. And a displacement device that changes the exposed portion of the conductive member exposed in the accommodation chamber by displacing the conductive member.

  According to this configuration, when the liquid crystal device manufacturing apparatus is used, electrons caused by plasma that generates sputtered particles from the target are taken into the exposed portion of the conductive member and removed from the accommodation chamber. Therefore, the plasma state in the accommodation chamber becomes stable, and sputtered particles can be generated stably. Further, electrons caused by plasma are prevented from leaking from the storage chamber to the film formation chamber, and changes in characteristics such as wettability of the substrate to be processed due to the electrons are prevented. As described above, since the film forming process by the sputtering method is stabilized, it is possible to form a good inorganic alignment film, and a manufacturing apparatus capable of manufacturing a good liquid crystal device.

  In addition, the conductivity of the exposed portion is reduced by part of the sputtered particles adhering to the exposed portion of the conductive member in the film forming process, but the exposed portion of the conductive member can be changed by the displacement device. A new portion of the conductive member can be used as the exposed portion instead of the exposed portion where the conductivity is lowered. Therefore, the conductivity of the exposed portion of the conductive member can be ensured over a long period of time, and the manufacturing apparatus can manufacture a good liquid crystal device over a long period of time. Therefore, the maintenance frequency for ensuring the conductivity of the conductive member can be remarkably reduced, and the operating rate of the liquid crystal device manufacturing apparatus can be improved. Thereby, it becomes a manufacturing apparatus which can manufacture a favorable liquid crystal device efficiently.

The conductive member may be arranged with the exposed portion exposed on the opening side of the target.
In order for electrons caused by plasma to reach the substrate, it always passes through an opening that leads from the storage chamber to the film formation chamber, so that an electron can reach the substrate by placing an exposed part between the target and the opening. Is reliably prevented.

Further, the conductive member may be disposed with the exposed portion exposed on the side opposite to the opening from the target.
In this way, by generating plasma in the vicinity of the target, electrons scattered on the side opposite to the opening from the target can be removed. This prevents electrons from saturating on the side opposite to the opening in the storage chamber, so that it is prevented from overflowing to the opening side. Therefore, the electrons are prevented from overflowing from the opening into the accommodation chamber, and the electrons are prevented from reaching the substrate.

Further, the target is a pair of targets facing each other, and the conductive member is arranged with the exposed portion facing sideways in a direction in which the pair of targets face each other in a region sandwiched between the pair of targets. It may be.
Since the plasma that generates the sputtered particles is generated in a region sandwiched between the pair of targets, by arranging the exposed portion in this region, electrons caused by the plasma can be removed well. Therefore, the electrons are prevented from overflowing from the region where plasma is generated to the opening side or the side opposite to the opening, and the electrons are prevented from reaching the substrate.

The conductive member may be a rotating body, and the displacement device may be a rotating device that rotates the conductive member.
According to this configuration, when the conductive member is rotated by the rotating device, a portion of the conductive member exposed in the accommodation chamber changes, so that an electron capturing device capable of removing electrons over a long period of time is obtained.

Further, the electron capturing device may include a spare rotating body having the same configuration as the rotating body and a replacement device for replacing the rotating body and the preliminary rotating body.
In this way, since the replaced preliminary rotator can be made to function as a new conductive member, the period during which the electron trapping device can function satisfactorily can be extended according to the number of preliminary rotators.

Further, the conductive member may be a sheet shape, and the displacement device may be a winding device that winds the conductive member.
In this way, the exposed portion can be changed by displacing the sheet-like conductive member by winding it with the displacement device. Further, since the conductive member is in a sheet form, the surface area with respect to the volume of the conductive member is larger than that in the bulk form. As the surface area of the conductive member increases, the portion of the conductive member that can function as an exposed portion increases, so that an electron trapping device that functions over a long period of time while saving space is obtained.

Further, it is preferable that a plurality of the electron capturing devices are provided in the accommodation chamber.
In this way, electrons can be removed more reliably than when one electron capture device is provided.

In addition, an exhaust device for exhausting the atmospheric gas in the film formation chamber is provided, and an exhaust path in the exhaust device communicates with the film formation chamber and communicates with the accommodation chamber through the arrangement portion of the electron trapping device. Preferably it is.
If the exhaust path in the exhaust device communicates with the inside of the accommodation chamber via the arrangement part of the electron trapping device, particles generated in the electron trapping device are discharged together with the atmospheric gas through the exhaust route. Therefore, the foreign matter resulting from the electron trapping device is prevented from entering the inorganic alignment film, and a good inorganic alignment film can be obtained.
Further, since the exhaust path communicates with the film formation chamber and the storage chamber, the pressure is uniform between the film formation chamber and the storage chamber. Accordingly, the film formation state becomes stable and a good inorganic alignment film can be obtained.

Further, it is preferable that a control device for detecting the state of the plasma in the storage chamber and controlling the displacement device based on the detection result is provided.
In this way, the exposed portion can be changed according to the state of the plasma, so the timing for changing the exposed portion can be adjusted so that the plasma is maintained in a state suitable for film formation. As a result, a good inorganic alignment film can be obtained, and the frequency of changing the exposed portion can be minimized, so that an electron trapping device that functions for a long period of time is obtained.

Moreover, it is preferable to provide a magnetic field generator that generates a magnetic field on the side of the accommodation chamber with respect to the exposed portion of the conductive member.
In this way, since the track of electrons in the accommodation chamber can be controlled by the magnetic field generator, electrons can be guided to the exposed portion and taken into the conductive member. Therefore, electrons in the accommodation chamber can be removed well, and a good inorganic alignment film can be obtained.

Moreover, it is preferable that the surface of the said exposed part in the said electrically-conductive member is an uneven surface.
In this way, the surface area of the exposed portion is larger than when the surface of the exposed portion is a smooth surface, and the opportunity for electrons to be taken into the exposed portion is increased. Moreover, since the deposit on the surface of the exposed portion is less likely to be detached than in the case of a smooth surface, the deposit is prevented from becoming a foreign substance.

  Hereinafter, although one embodiment of the present invention is described, the technical scope of the present invention is not limited to the following embodiment. In the following description, various structures are illustrated using drawings, but in order to show the characteristic parts of the structures in an easy-to-understand manner, the structures in the drawings are shown in different sizes and scales from the actual structures. There is.

  FIG. 1 is a schematic configuration diagram illustrating a liquid crystal device manufacturing apparatus according to the present embodiment, and FIG. 2 is a cross-sectional view taken along line B-B ′ of FIG. 1. As shown in FIG. 1, the manufacturing apparatus 1 includes a film forming chamber 2 that houses a substrate W that is a constituent member of a liquid crystal device, and a sputtering device 3 that has a housing chamber 31 that houses targets 30 a and 30 b. . The film formation chamber 2 is a vacuum chamber and communicates with the storage chamber 31 through an opening 31A. During film formation, the sputtering apparatus 3 generates sputtered particles in the storage chamber 31 and discharges the sputtered particles to the film forming chamber 2 side through the opening 31A.

  The substrate W is formed by forming various wirings such as scanning lines and data lines, various switching elements such as thin film transistors, and various electrodes such as pixel electrodes on a transparent substrate such as glass. The substrate W is transported in the film forming chamber 2 with its processing surface W0 held toward the opening 31A. The sputtering apparatus 3 is attached so that the direction in which the sputtered particles are emitted is inclined non-perpendicularly with respect to the surface to be processed W0. Particles are incident and deposited. As described above, the sputtering apparatus 3 forms the inorganic alignment film on the processing surface W0 of the substrate W by the sputtering method.

  Hereinafter, the XYZ orthogonal coordinate system shown in FIG. 1 is set, and the positional relationship of the members will be described based on this. In this XYZ orthogonal coordinate system, the direction perpendicular to the surface to be processed W0 of the substrate W held in the film forming chamber 2 is defined as the Z direction, and the side of the sputtering apparatus 3 with respect to the surface to be processed W0 is defined as the Z negative direction. Further, the transport direction of the substrate W is defined as the X direction (the transport downstream side is the X positive direction), and the direction orthogonal to the X direction and the Z direction is defined as the Y direction. In addition, the direction in which the sputtered particles are discharged in the sputtering apparatus 3 is the Za direction, and the direction in which the targets 30a and 30b are opposed to each other is the Xa direction. Here, the Xa direction and the Za direction are orthogonal to each other.

  The film forming chamber 2 includes a tray 20 that holds the substrate W and a transfer device (not shown) that transfers the tray 20. The tray 20 is provided with a temperature control device (not shown) that controls the substrate temperature of the substrate W. Here, the transport path of the substrate W is substantially along the X direction, and the first gas supply device 21 is disposed on one side (X positive direction side) sandwiching the opening 31A in the transport path, and the exhaust path 22a is disposed on the other side. An exhaust device 22 is connected. The first gas supply device 21 supplies oxygen gas as a reaction gas that reacts with the alignment film material flying on the substrate W. A reaction product obtained by reacting the alignment film material and oxygen gas is formed on the substrate W. The exhaust device 20 evacuates a reaction gas flowing in the film forming chamber 2 and an atmospheric gas such as a discharge gas described later, and controls the degree of vacuum in the film forming chamber 2.

  In an actual manufacturing apparatus, a load lock chamber is provided outside the film forming chamber 2 in the X direction. The load lock chamber is connected to an exhaust device that adjusts to a vacuum atmosphere independently of the film formation chamber 2. The load lock chamber and the film formation chamber 2 are connected via a gate valve that hermetically closes the chamber. With such a configuration, the substrate W can be taken in and out without releasing the film formation chamber 2 to the atmosphere.

  A sputtering apparatus 3 is disposed so as to protrude outward from the wall surface on the Z negative direction side of the film forming chamber 2. The sputtering apparatus 3 according to the present embodiment includes a substantially box-shaped sputtered particle generation unit and a connection unit 37 with the film forming chamber 2. The sputtered particle generator has inner wall portions 32a to 32e (see FIG. 2 for inner wall portions 32d and 32e). A space region surrounded by the inner wall portions 32 a to 32 e and the connection portion 37 is the accommodation chamber 31.

  A pair of targets 30 a and 30 b are disposed and accommodated in the accommodation chamber 31 of the sputtering apparatus 3 so as to face each other. The targets 30a and 30b are, for example, rectangular plate-like shapes containing silicon that is a main material of the inorganic alignment film. The targets 30a and 30b can be attached to the inner wall portions 32a and 32b positioned on the side of the emission direction (Za direction) in the sputtering apparatus 3, respectively. Here, it arrange | positions so that a mutual opposing surface may become parallel, and the opposing surface is parallel to Za direction.

  The side wall 32a has an electrode 321a and an electrode holding portion 322a. The electrode 321a has a plate shape that overlaps the entire target 30a, and serves as an attachment portion of the target 30a. The electrode holding portion 322a is provided with a cooling device (not shown) for cooling the electrode 321a. The inner wall portion 32b has the same configuration as the inner wall portion 32a, and has an electrode 321b and an electrode holding portion 322b. The electrodes 321a and 321b are electrically connected to power sources 4a and 4b each composed of a DC power source or a high frequency power source.

  A discharge gas (for example, argon gas) can be supplied to a region A sandwiched between the targets 30a and 30b. Here, a gas supply port 33A is provided in the inner wall portion 32c of the sputtering apparatus 3 on the side opposite to the film forming chamber 2 in the discharge direction (Za direction), and the gas supply port 33A is connected to the gas supply port 33A. The discharge gas can be supplied.

  In a state where the discharge gas is supplied to the region A, plasma can be generated in the region A by the power supplied from the power sources 4a and 4b to the electrodes 321a and 321b. When ions contained in the plasma collide with the targets 30a and 30b, sputtered particles are knocked out of the targets 30a and 30b.

  An adhesion preventing plate 35 is provided to cover the inner wall portions 32a to 32e of the storage chamber 31, the connection portion 37, and the inner wall of the film forming chamber 2 around the opening 31A. The adhesion preventing plate 35 has openings for exposing the conductive members (described later) of the targets 30 a and 30 b and the electron capturing devices 36 a to 34 f to the accommodation chamber 31. The deposition preventive plate 35 is made of aluminum or the like, and prevents spatter particles from adhering to the inner wall or the like by adhering sputtered particles to the deposition preventive plate 35 itself. The adhesion-preventing plate 35 is subjected to a blasting process or a thermal spraying process, thereby preventing deposits from being detached and becoming particles.

  Magnetic field generators 34a and 34b are provided in portions overlapping the periphery of the targets 30a and 30b, respectively (see FIG. 2). The magnetic field generators 34a and 34b are made of, for example, a rectangular frame-shaped permanent magnet, an electromagnet, or a combination of these, and generate a magnetic field between the magnetic field generators 34a and 34b in a portion surrounding the region A where plasma is generated. . By controlling the track of the electrons caused by the plasma by this magnetic field, it is possible to prevent the electrons from flying toward the substrate W.

  The sputtering apparatus 3 is provided with electron capture devices 36a to 36f. The electron capture devices 36a to 34f remove plasma-derived electrons, and a detailed structure will be described later. Here, electron trapping devices 36a and 36b are provided on the inner wall portion 32a, and electron trapping devices 36c and 36d are respectively provided at portions of the inner wall portion 32b facing the electron trapping devices 36a and 36b. Further, as shown in FIG. 2, electron trapping devices 36e and 36f are provided on inner wall portions 32d and 32e of the sputtering device 3 that sandwich the region A in the Y direction, respectively.

  The electron capturing devices 36a and 36c are provided closer to the opening 31A than the targets 30a and 30b. Here, the electron capturing devices 36a and 36c are disposed closer to the opening 31A than the magnetic field generators 34a and 34b. The electron capturing devices 36b and 36d are provided on the opposite side (gas supply port 33A side) of the opening 31A from the targets 30a and 30b, and here are arranged on the gas supply port 33A side of the magnetic field generators 34a and 34b. ing. The electron capture devices 36e and 36f are arranged in a portion overlapping the region A in the Y direction. The electron capture device 36a is connected to the exhaust path 22a via a pipe 38.

  FIG. 3A is a schematic diagram showing the configuration of the electron trapping device 36a, and FIG. 3B is a cross-sectional view showing the configuration of the electron trapping device 36a. FIG. 3B corresponds to FIG. 1 and shows a cross-sectional view in the XZ plane. The electron capturing devices 36e to 36f have the same configuration.

  As shown in FIG. 3A, the electron capturing device 36a includes a conductive member 362a and a displacement device 360a. The conductive member 362 a is arranged with a part (exposed portion) of the conductive member 362 a exposed in the storage chamber 31. The conductive member 362a is made of a conductive material such as aluminum and is connected (grounded) to a conductive portion having a ground potential. When the displacement device 360a displaces the conductive member 362a, a portion different from that before the displacement becomes an exposed portion. Electrons caused by plasma in the storage chamber 31 are taken into the conductive member 362a from the surface of the exposed portion and escaped to the conductive portion through the conductive member 362a.

  The conductive member 362a of this embodiment is a columnar member extending in the Y direction, and the length in the Y direction is substantially the same as that of the region A. Here, a portion exposed to the inside of the storage chamber 31 through the slit 35A of the deposition preventing plate 35 is an exposed portion. The displacement device 360a rotates the conductive member 362a around the axis to displace it. The displacement device 360a is connected to a control device 365a that controls the amount of displacement (rotation angle) of the conductive member 362a. The controller 365a is connected to a sensor 366a that detects the state of plasma in the storage chamber 31 during film formation. The sensor 366a is one that detects an electrical state of plasma, one that detects an emission spectrum of plasma, or the like. The control device 365 a receives the detection result of the sensor 366 and determines the number of electrons in the film formation chamber 2. Then, the number of electrons is compared with a reference value, and when the number of electrons exceeds the reference value, the displacement amount is transmitted to the displacement device 360a. The displacement device 360a displaces the conductive member 362a by the received displacement amount.

  As shown in FIG. 3B, the conductive member 362a is housed in a housing 361a, and the housing 361a is connected to a pipe 38 that leads to the exhaust path 22a. As a result, the storage chamber 31 communicates with the exhaust path 22a via the housing 361a.

Next, a method for forming an inorganic alignment film on the substrate W by the manufacturing apparatus 1 having the above configuration will be described.
As described above, when argon gas is supplied to the region A and DC power (RF power) is supplied between the electrodes 321a and 321b, plasma is generated in the region A and the alignment film material (silicon) is generated from the targets 30a and 30b. Are ejected as sputtered particles. Sputtered particles ejected at an angle passing through the opening 31A, that is, approximately in the Za direction, are emitted to the film formation chamber 2 side through the opening 31A. In such a state, when oxygen gas is circulated in the film forming chamber 2 and the substrate W is conveyed with the surface to be processed W0 directed to the opening 31A, sputtered particles are deposited on the surface to be processed W0 while reacting with oxygen gas. . Thereby, the silicon oxide grows in a columnar shape in the Za direction, and an inorganic alignment film is obtained.

  In such a film formation process, when argon gas is ionized to generate plasma, a large amount of electrons are generated in the region A. By generating a magnetic field between the magnetic field generators 34 a and 34 b, electrons are confined in the region A by controlling the tracks. However, when electrons are saturated in the region A, the region A overflows to the opening 31A side and the gas supply port 33A side. When electrons are saturated in the space on the gas supply port 33A side, the overflow of electrons to the opening 31A side becomes significant, and a large amount of electrons enter the film forming chamber 2. When the substrate W is exposed to electrons, the wettability of the surface to be processed W0 with respect to the sputtered particles changes, and an inorganic alignment film having a uniform film quality cannot be obtained.

As a method for preventing electrons from overflowing into the film forming chamber 2, it is conceivable to arrange a conductive member in the accommodation chamber 31 of the sputtering apparatus 3, for example, to form the deposition preventing plate 35 with a conductive material. However, the deposition preventing plate 35 is originally for adhering sputter particles, and when silicon or silicon oxide adheres to the surface, the conductivity of the surface is impaired. Accordingly, electrons cannot be removed by the deposition preventing plate 35 within a short period of time, and frequent maintenance is required to restore the conductivity of the deposition preventing plate 35 surface. In order to perform maintenance, it is necessary to return the reduced pressure inside the film forming chamber 2 to atmospheric pressure, and the manufacturing efficiency is lowered due to a decrease in the substantial operating rate of the manufacturing apparatus.
However, since the liquid crystal device manufacturing apparatus of the present invention includes the electron trapping device, it is possible to efficiently manufacture a liquid crystal device including a good inorganic alignment film. Hereinafter, the function of the electron capture device will be described.

  4 (a) to 4 (c) are explanatory diagrams showing functions of the electron capturing device 36a. As shown in FIG. 4A, the sputtered particles 5a travel in the approximate Za direction and the electrons 5b are scattered in the storage chamber 31 during film formation. Since the electrons 5b are a byproduct of ionizing argon gas to generate the sputtered particles 5a, the number of electrons 5b increases as the number of sputtered particles 5a increases. For example, if the number of sputtered particles 5a is increased, the process of forming the inorganic alignment film can be shortened, but the number of electrons 5b is also increased. Such electrons 5b are taken into the surface of the conductive member 362a and escaped to the outside of the sputtering apparatus 3 through the conductive member 362a.

  Since the distance between the targets 30a and 30b is a finite value, the entire sputtered particle 5a is ejected radially. Part of the sputtered particles 5a adheres to the conductive member 361a through the deposition preventing plate 35a slit 35A. As the operating time of the manufacturing apparatus 1 becomes longer, the deposit becomes the deposit film 5c and covers the exposed surface of the conductive member 362a as shown in FIG. 4B. Since the deposit film 5c has extremely low conductivity as described above, the electrons 5b are not taken into the conductive member 362a.

  As shown in FIG. 4 (c), by displacing the conductive member 362a, a portion different from the portion where the deposit film 5c is formed is exposed. Since the surface of the new exposed portion has conductivity, it becomes possible to escape the electrons 5b well again. By displacing the conductive member 362a in this way, the utilization factor of the surface of the conductive member 362a is improved, so that the electrons 5b can be removed from the storage chamber 31 over a long period of time.

  The above effect can be obtained if at least one electron trapping device is provided in the storage chamber 31. However, in the present embodiment, since a plurality of electron trapping devices 36a to 36f are provided, a higher effect can be obtained. Can be obtained. Specifically, the electron capturing devices 36e and 36f are arranged in a portion overlapping the region A in the Y direction, and plasma is generated in the region A, so that the number of scattered electrons is increased. As described above, since the number of adhering sputtered particles increases in the region where the number of electrons is large, the maintenance frequency increases with a normal conductive member. However, according to the electron trapping devices 36e and 36f, the maintenance frequency increases over a long period of time. Electrons can be removed. Further, since electrons are removed in the vicinity of the electron generation source, it is possible to prevent the electrons from overflowing outside the region A.

  The electrons overflowing from the region A are scattered on the gas supply port 33A side and the opening 31A side. Electron trapping devices 36b and 36d are provided on the gas supply port 33A side of the region A, so that electrons can be removed, and the electrons are saturated on the gas supply port 33A side of the region A and the opening 31A side. It is possible to prevent the number of electrons scattered from increasing. In addition, since the electron capturing devices 36a and 36c are provided on the opening 31A side of the region A, the substrate W is exposed to the electrons by removing the electrons passing through the opening 31A and going to the film forming chamber 2. It can be prevented directly.

  As a method of displacing (rotating) the conductive member 362a in the electron trapping device 36a, a method of rotating at a constant angular velocity or a method of rotating according to the plasma state can be used. In the present embodiment, the latter is adopted. is doing. In this way, the conductive member 362a is displaced according to the number of electrons in the storage chamber 31, so that it is not displaced in a state where the conductivity of the exposed portion is not lowered. Therefore, the conductive member 362a can be functioned without waste, and the maintenance frequency can be reduced by extending the life of the conductive member 362a. Moreover, as a method of rotating according to the plasma state, for example, a method of providing a sensor for detecting the plasma state and performing manual control can be used. However, as in the present embodiment, a control device 365a is provided. By adopting automatic control, the time and effort of control can be saved.

  Further, since the casing 361a of the electron trapping device 36a is connected to the pipe 38 that leads to the exhaust path 22a, the argon gas that overflows from the region A to the opening 31A side is exhausted through the pipe 38. Thereby, oxygen gas and argon gas are prevented from being mixed in the film forming chamber 2, and the oxygen gas and the sputtered particles deposited on the substrate W can be reacted favorably. Therefore, the composition ratio of oxygen and silicon in the inorganic alignment film becomes a predetermined value, and a good inorganic alignment film can be obtained. Further, the pressure in the film forming chamber 2 becomes uniform between the vicinity of the opening 31A and the vicinity of the exhaust path 22a, and stable film formation can be performed.

  In addition, it is conceivable that particles are generated from the conductive member 362a or the displacement device 360a by displacing the conductive member 362a in the housing 361a, or particles are generated by detachment of deposits from the conductive member 362a. However, since such particles are exhausted together with the atmospheric gas through the pipe 38, they are not scattered into the storage chamber 31 and the film formation chamber 2. Accordingly, particles are prevented from being mixed into the inorganic alignment film, and a good inorganic alignment film can be obtained.

  In general, since the inorganic alignment film is formed in a vacuum atmosphere, when maintenance of the manufacturing apparatus is performed, a great deal of labor and time are required for opening the atmosphere and reducing the pressure. The contents of the maintenance include replacement due to target depletion, replacement of an adhesion-preventing plate for preventing detachment of deposits, replacement of a conductive member for removing electrons, and the like. Although the replacement of the target is inevitable, it has a longer life than the deposition preventive plate and the conductive member. In addition, the adhesion preventing plate has been extended in service life due to the advancement of the desorption preventing treatment technology. Under such circumstances, the current state is that the life of the conductive member is determined by the maintenance frequency. In particular, if an attempt is made to increase the film formation rate, the conductive member cannot be omitted due to an increase in the number of electrons, and the life of the conductive member is reduced, so that the frequency of maintenance increases. End up.

  According to the apparatus for manufacturing a liquid crystal device of the present invention, since an electron capturing device for removing electrons in the storage chamber 2 over a long period of time is provided, the maintenance frequency for replacing the conductive member is significantly reduced, and a good liquid crystal The device can be manufactured efficiently.

  In this embodiment, the inorganic alignment film is formed while reacting the sputtered particles and oxygen gas. However, for example, silicon oxide (SiOx) is used as the targets 30a and 30b, and silicon oxide is directly formed. A film may be formed. In addition to silicon oxide, aluminum oxide (AlOy or the like) can be formed. Even in such a case, by allowing oxygen gas to flow in the film formation chamber 2, it is possible to prevent the formed inorganic alignment film from being deviated from the oxide composition, and to improve the insulation of the inorganic alignment film. be able to. Further, the example in which the film is formed obliquely with respect to the surface to be processed W0 has been described, but the effect of the present invention can be similarly obtained even when the film is formed from the normal direction of the surface to be processed.

  Further, although the electron capturing devices 36a to 36f are all disposed outside the magnetic field generators 34a and 34b with respect to the region A, they may be disposed in a portion surrounded by the magnetic field generators 34a and 34b. Such a portion is in the vicinity of the targets 30a and 30b, so that the number of sputtered particles is particularly large. In addition, since the electrons are confined, the number of electrons is also large. The electron trapping device according to the present invention can function for a long period of time even when arranged in a region where there are a lot of sputtered particles, and the number of electron sources can be reduced. In addition, a part of the conductive member is exposed to the storage chamber 31 through the slit 35A of the deposition preventing plate 35A. However, the conductive member may be exposed to the inner wall of the housing of the electron capturing device, the inner wall of the sputtering device, or the connection portion 37. The part may be exposed. For example, the housing of the electron trapping device is shaped to cover the conductive member on the storage chamber 31 side, and an opening that communicates with the inside of the housing and the storage chamber 31 is provided, and the conductive member is exposed through this opening. Good.

  In addition, although the example in which the pipe 38 is connected to the electron capture device 36a has been described, a configuration in which the electron capture devices 36b to 36f are connected to the exhaust path 22a may be applied. When providing a plurality of electron capture devices, the timing at which the conductive member is displaced by the plurality of electronic members, the control method, and the like may be varied. Various modifications are possible for the configuration of the electron trapping device, and modifications 1 to 4 will be described below. However, when a plurality of electron trapping devices are provided in the sputtering device, for example, an electron trapping device is provided. Depending on the position, the configuration may be different for a plurality of electron capture devices.

  FIG. 5A is a cross-sectional view illustrating a configuration of the electron capturing device 39a in the liquid crystal device manufacturing apparatus according to the first modification. Modification 1 is different from the above embodiment in that unevenness is provided on the surface of the conductive member 392a. Here, the cross-sectional shape of the conductive member 392a is a gear shape due to unevenness. Since the surface area of the conductive member 392a is increased by the unevenness, electrons can be captured well. Further, since it becomes difficult for the sputtered particles to adhere to the recesses, the conductive member 392a can have a long life. As such irregularities, a shape with rounded corners is preferable from the viewpoint of avoiding plasma-induced arc (abnormal discharge).

  FIG. 5B is a cross-sectional view illustrating a configuration of the electron capturing device 39b in the liquid crystal device manufacturing apparatus according to the second modification. The modification 2 is different from the above embodiment in that a part of the roll 392b around which the sheet-like conductive member 394b is wound is exposed in the storage chamber 31. The conductive member 394b is, for example, a metal mesh or a resin-coated metal surface. A roll (winding device) 393b is provided on the side of the roll 392b opposite to the storage chamber 31 (on the side of the pipe 38), and the roll 393b can be rotated. The conductive member 394b wound around the roll 392b is displaced by being wound around the roll 393b.

  According to such a configuration, since the conductive member 394b has a sheet shape, the surface area of the conductive member 394b with respect to a space (for example, the housing 391b) that accommodates the conductive member 394b is significantly increased. Therefore, it becomes possible to make the electron capturing device 39b function for an extremely long time. Moreover, since the roll 393b on the winding side is arranged on the pipe 38 side, the deposits detached from the wound conductive member 393b are surely exhausted, and the generation of particles is reliably prevented.

  FIG. 6A is a cross-sectional view illustrating a configuration of an electron capturing device 39c in the liquid crystal device manufacturing apparatus according to the third modification. In the third modification, the sheet-like conductive member 394c is wound around the roll 392c, and is the same as the second modification in that the sheet-like conductive member 394c is displaced by being wound around the roll 393c. Modification 3 is different from Modification 2 in that rolls 392 c and 393 c are arranged along the adhesion preventing plate 35. As a result, the sheet-like conductive member 394c is displaced by translational movement along the deposition preventing plate 35, and is exposed to the accommodation chamber 31 in the slit 35A of the deposition preventing plate 35.

  Moreover, in the modification 3, the magnetic field generator 395c is provided between the rolls 392c and 393c. The magnetic field generator 395c can generate a magnetic field M via a conductive member 394c on the opposite side across the accommodation chamber 31. By controlling the track of the electrons by the magnetic field M, the electrons can be prevented from moving toward the opening 31A, and the confined electrons can be removed by the conductive member 394c. Since the conductive member 394c is in the form of a sheet, the magnetic field is hardly weakened by the conductive member 394c, so that electrons can be removed well. In addition, since the conductive member 394c is in the form of a sheet, the distance between the opposite side across the accommodation chamber 31 and the magnetic field generator 395c is reduced, and the magnetic field M can be easily increased.

    FIG. 6B is a cross-sectional view showing the configuration of the electron capturing device 39c in the liquid crystal device manufacturing apparatus of Modification 4. The modification 4 is different from the above embodiment in that a plurality of columnar conductive members (six in the drawing) 392d are provided. Five of the six conductive members 392d are spare conductive members (preliminary rotating bodies). Each of the plurality of conductive members 392d is sandwiched between a pair of disk-shaped supports (replacement devices) at both end surfaces. FIG. 6B shows only one support 391d of the pair of supports.

The plurality of conductive members 392d and the support 391d are all displaced by a displacement device. One conductive member 392 d is exposed to the accommodation chamber 31 through the slit 35 </ b> A of the deposition preventing plate 35. When the conductive member 392d rotates in the same manner as in the above-described embodiment, the sputtered particles adhere to it and the conductivity of the entire surface is impaired, the support 391d rotates, and another conductive member 392d corresponds to the slit 35A. Change to the position you want.
According to such a configuration, the electron capturing device 39d can be functioned over a period corresponding to the number of conductive members 392d. Thereby, the maintenance frequency can be significantly reduced.

It is a schematic block diagram which shows the manufacturing apparatus of the liquid crystal device of this invention. FIG. 2 is a cross-sectional view taken along line B-B ′ in FIG. 1. (A) is a perspective schematic diagram of an electron capturing device, and (b) is a cross-sectional view of the electron capturing device. (A)-(c) is explanatory drawing which shows the function of an electron capture apparatus. (A) is sectional drawing which shows the modification 1, (b) is sectional drawing which shows the modification 2. FIG. (A) is sectional drawing which shows the modification 3, (b) is sectional drawing which shows the modification 4. FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Manufacturing apparatus of a liquid crystal device, 2 ... Film-forming chamber, 3 ... Sputtering device, 30a, 30b ... Target, 31 ... Storage chamber, 31A ... Opening of storage chamber, 36a -36f, 39a-39d ... Electronic capture device, 362a, 392a, 392b, 392d, 393b, 393c, 394c ... conductive member, 360a ... displacement device

Claims (12)

An apparatus for manufacturing a liquid crystal device comprising a liquid crystal layer sandwiched between a pair of opposing substrates, wherein an inorganic alignment film is formed between at least one of the substrates and the liquid crystal,
A film forming chamber, and a sputtering apparatus for forming an inorganic alignment film by forming an alignment film material on the one substrate by sputtering in the film forming chamber,
The sputtering apparatus includes a storage chamber that has an opening that communicates with the film formation chamber and stores a target, and an electron capture device that captures electrons contained in the storage chamber.
The electron capturing device includes a conductive member partially exposed in the accommodation chamber, and a displacement device that changes an exposed portion of the conductive member exposed in the accommodation chamber by displacing the conductive member. An apparatus for manufacturing a liquid crystal device.   The apparatus for manufacturing a liquid crystal device according to claim 1, wherein the conductive member is disposed with the exposed portion exposed on the opening side of the target.   The apparatus for manufacturing a liquid crystal device according to claim 1, wherein the conductive member is disposed with the exposed portion exposed on a side opposite to the opening from the target. The target is a pair of targets facing each other,
2. The liquid crystal device according to claim 1, wherein the conductive member is arranged with the exposed portion facing a side in a direction in which the pair of targets face each other in a region sandwiched between the pair of targets. apparatus.   The liquid crystal layer manufacturing apparatus according to claim 1, wherein the conductive member is a rotating body, and the displacement device is a rotating device that rotates the conductive member.   6. The electron capturing device according to claim 5, wherein the electron capturing device has a preliminary rotating body having the same configuration as the rotating body and includes a replacement device for replacing the rotating body and the preliminary rotating body. Liquid crystal device manufacturing equipment.   The liquid crystal device manufacturing apparatus according to claim 1, wherein the conductive member is in a sheet form, and the displacement device is a winding device that winds the conductive member.   The liquid crystal device manufacturing apparatus according to claim 1, further comprising a plurality of the electron trapping devices in the housing chamber. An exhaust device for exhausting the atmospheric gas in the film formation chamber;
The exhaust path in the exhaust device communicates with the film formation chamber and communicates with the accommodation chamber via the arrangement portion of the electron trapping device. A manufacturing apparatus of the liquid crystal device according to the description.   The liquid crystal device according to claim 1, further comprising a control device that detects a state of plasma in the storage chamber and controls the displacement device based on the detection result. Manufacturing equipment.   11. The apparatus for manufacturing a liquid crystal device according to claim 1, further comprising: a magnetic field generator that generates a magnetic field on the side of the accommodation chamber with respect to the exposed portion of the conductive member.   The apparatus for manufacturing a liquid crystal device according to claim 1, wherein a surface of the exposed portion of the conductive member is an uneven surface.

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