JP2009540617A - 再発光半導体構造体及び反射体を有するｌｅｄ装置 - Google Patents

再発光半導体構造体及び反射体を有するｌｅｄ装置 Download PDF

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Publication number
JP2009540617A
JP2009540617A JP2009515585A JP2009515585A JP2009540617A JP 2009540617 A JP2009540617 A JP 2009540617A JP 2009515585 A JP2009515585 A JP 2009515585A JP 2009515585 A JP2009515585 A JP 2009515585A JP 2009540617 A JP2009540617 A JP 2009540617A
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Japan
Prior art keywords
reflector
semiconductor structure
light
emitting semiconductor
wavelength
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JP2009515585A
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English (en)
Japanese (ja)
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JP2009540617A5 (enExample
Inventor
マイケル・エイ・ハース
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3M Innovative Properties Co
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3M Innovative Properties Co
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Publication of JP2009540617A publication Critical patent/JP2009540617A/ja
Publication of JP2009540617A5 publication Critical patent/JP2009540617A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H01L2924/13033—TRIAC - Triode for Alternating Current - A bidirectional switching device containing two thyristor structures with common gate contact
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
JP2009515585A 2006-06-12 2007-06-11 再発光半導体構造体及び反射体を有するｌｅｄ装置 Pending JP2009540617A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US80453806P 2006-06-12 2006-06-12
PCT/US2007/070853 WO2007146863A1 (en) 2006-06-12 2007-06-11 Led device with re-emitting semiconductor construction and reflector

Publications (2)

Publication Number Publication Date
JP2009540617A true JP2009540617A (ja) 2009-11-19
JP2009540617A5 JP2009540617A5 (enExample) 2010-08-12

Family

ID=38832113

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009515585A Pending JP2009540617A (ja) 2006-06-12 2007-06-11 再発光半導体構造体及び反射体を有するｌｅｄ装置

Country Status (6)

Country Link
EP (1) EP2033237A4 (enExample)
JP (1) JP2009540617A (enExample)
KR (1) KR20090018627A (enExample)
CN (1) CN101467273B (enExample)
TW (1) TW200810156A (enExample)
WO (1) WO2007146863A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2021066050A1 (enExample) * 2019-10-02 2021-04-08
WO2024063034A1 (ja) * 2022-09-21 2024-03-28 株式会社トプコン 植物センサ
WO2024063033A1 (ja) * 2022-09-21 2024-03-28 株式会社トプコン 植物センサ

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008012316B4 (de) * 2007-09-28 2023-02-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlichtquelle mit einer Primärstrahlungsquelle und einem Lumineszenzkonversionselement
KR101701137B1 (ko) 2009-04-30 2017-02-01 젤티크 애스세틱스, 인코포레이티드. 피하 지질 과다 세포로부터 열을 제거하는 디바이스, 시스템 및 방법
DE102013212372A1 (de) * 2013-06-27 2014-12-31 Robert Bosch Gmbh Optische Baueinheit
CN105865668B (zh) * 2015-01-20 2019-12-10 北京纳米能源与系统研究所 压力传感成像阵列、设备及其制作方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11274558A (ja) * 1998-03-23 1999-10-08 Toshiba Corp 半導体発光素子および半導体発光装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3358556B2 (ja) * 1998-09-09 2002-12-24 日本電気株式会社 半導体装置及びその製造方法
US6853012B2 (en) * 2002-10-21 2005-02-08 Uni Light Technology Inc. AlGaInP light emitting diode
US7091653B2 (en) * 2003-01-27 2006-08-15 3M Innovative Properties Company Phosphor based light sources having a non-planar long pass reflector
US7136408B2 (en) * 2004-06-14 2006-11-14 Coherent, Inc. InGaN diode-laser pumped II-VI semiconductor lasers
US7223998B2 (en) * 2004-09-10 2007-05-29 The Regents Of The University Of California White, single or multi-color light emitting diodes by recycling guided modes
US7045375B1 (en) * 2005-01-14 2006-05-16 Au Optronics Corporation White light emitting device and method of making same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11274558A (ja) * 1998-03-23 1999-10-08 Toshiba Corp 半導体発光素子および半導体発光装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2021066050A1 (enExample) * 2019-10-02 2021-04-08
WO2021066050A1 (ja) * 2019-10-02 2021-04-08 富士フイルム株式会社 バックライトおよび液晶表示装置
JP7242886B2 (ja) 2019-10-02 2023-03-20 富士フイルム株式会社 バックライトおよび液晶表示装置
WO2024063034A1 (ja) * 2022-09-21 2024-03-28 株式会社トプコン 植物センサ
WO2024063033A1 (ja) * 2022-09-21 2024-03-28 株式会社トプコン 植物センサ

Also Published As

Publication number Publication date
EP2033237A1 (en) 2009-03-11
CN101467273B (zh) 2012-05-09
WO2007146863A1 (en) 2007-12-21
CN101467273A (zh) 2009-06-24
EP2033237A4 (en) 2013-10-02
TW200810156A (en) 2008-02-16
KR20090018627A (ko) 2009-02-20

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