JP2009521714A - Flame light perforated aperture mask - Google Patents

Abstract

  The aperture mask is provided comprising an elongated web of flexible film having at least one vapor deposition mask pattern formed in the film, the vapor deposition mask pattern comprising a portion of at least one or more electronic circuit elements. A vapor deposition opening extending through the defining film is defined, and the vapor deposition opening is bounded by a frame, the frame being part of the mask having a thickness greater than the standard thickness of the mask. In another aspect, the present invention includes a step of providing a support surface including a plurality of lower portions and a step of preparing a burner that supports a flame, wherein the flame has a flame tip on the opposite side of the burner. A step of including a burner, a step of contacting at least a portion of an elongated web of flexible film against the surface of the support, and heating the film with a flame from the burner to form a plurality of lower portions. Creating an opening in the film in a covered area.

Description

  The present invention relates to the manufacture of electronic circuit elements by using an aperture mask made by a flame drilling method, a method for making such a mask, and an aperture mask made by such a method.

  Electronic circuits include a combination of electronic circuit elements, such as resistors, capacitors, inductors, diodes, transistors, and other active and passive components connected by conductive connections. Thin film integrated circuits include several layers, such as a metal layer, a dielectric layer, and an active layer, typically formed of a semiconductor material such as silicon. In general, thin film circuit elements and thin film integrated circuits perform photolithography in an additional or subtractive process that can include chemical etching steps that deposit layers of various materials and then define various circuit components. Made by patterning layers using. In addition, aperture masks have been used to deposit patterned layers without an etching step or any photolithography.

  U.S. Pat. No. 6,821,348 B2 discloses a method and apparatus for aperture masks and related systems and is incorporated herein by reference.

  US Patent Publication Nos. 2004 / 0070100A1 and 2005 / 0073070A1 disclose certain methods and apparatus for flame perforation of films and are incorporated herein by reference.

  U.S. Published Application No. 11 / 179,418 discloses a method and apparatus associated with winding a good aperture mask and associated roll-to-roll or continuous operation system and is incorporated herein by reference.

  Briefly, the present invention provides an aperture mask that includes an elongated web of flexible film and at least one vapor deposition mask pattern formed in the film, the vapor deposition mask pattern comprising one or more electronic circuit elements. Defining a vapor deposition opening extending through the film defining at least a portion of the vapor deposition aperture, the vapor deposition opening being bounded by a frame, the frame being a part of the mask having a thickness greater than the standard thickness of the mask . The aperture mask may include a plurality of independent vapor deposition mask patterns that may be substantially the same or different. Film webs are generally flexible enough to be rolled to form a roll. A web of film is generally stretchable at least in the down direction of the web, the cross direction of the web, or both. The web of film generally comprises a polymer film, more commonly a polyimide film or a polyester film. Generally, the at least one deposition opening has a minimum diameter of less than about 1000 microns, more typically less than about 250 microns.

  In another aspect, the present invention provides a method of making an aperture mask that includes an elongated web of flexible film and a deposition mask pattern formed on the film, wherein the deposition mask pattern includes one or more electrons. A deposition opening is defined that extends through the film defining at least a portion of the circuit element. The method includes a step of providing a support surface including a plurality of lower portions, a step of preparing a burner for supporting a flame, the flame including a flame tip on the opposite side of the burner, and a flexible Contacting at least a portion of an elongated web of a conductive film against the support surface and heating the film with a flame from a burner to create openings in the film in an area covering a plurality of lower portions And including. In one embodiment, the support surface is cooled to a temperature below 29 ° C. (120 ° F.) and heated to the first side of the film to contact the surface above 74 ° C. (165 ° F.). The heated surface is then removed from the first surface of the film prior to heating the film with the flame from the burner, and the film is covered in an area covering a plurality of lower portions. Make an opening in. Another embodiment further includes positioning the burner such that the distance between the non-flaming flame tip and the burner is at least 1/3 greater than the distance between the film and the burner. The positioning step may further include positioning the burner such that the distance between the flameless flame tip and the burner is at least 2 millimeters greater than the distance between the film and the burner. In another embodiment, the step of positioning the burner such that the angle measured between the burner and the nip roll is less than 45 °, the vertex of the angle being positioned on the axis of the backing roll, In addition.

  In another aspect, the present invention includes the steps of providing a support surface including a plurality of lower portions and providing a burner that supports a flame, wherein the flame includes a flame tip on the opposite side of the burner. And a step of bringing at least a portion of the elongated web of flexible film into contact with the surface of the support, and heating the film with a flame from a burner to cover an opening mask in an area covering a plurality of lower portions Forming an opening mask with them, providing a first web made of a film, positioning the opening mask and the first web made of a film in close proximity to each other, and in the opening mask Depositing a vapor deposition material on a first web of film through the openings to create at least a portion of one or more electronic circuit elements. That. In one embodiment, the method includes partially or fully burning the aperture mask, partially or fully melting the aperture mask, partially or fully dividing the aperture mask into pieces. Optionally, the step of recovering the vapor deposition material accumulated in the aperture mask by a method that makes it impossible to reuse the aperture mask. .

  FIG. 1 is a perspective view of the opening mask 10A. As shown in the figure, the opening mask 10A includes an elongated web made of a flexible film 11A and a vapor deposition mask pattern 12A formed on the film. The vapor deposition mask pattern 12A defines a vapor deposition opening (not labeled in FIG. 1) that extends through the film. In general, the opening mask 10A is formed of several vapor deposition mask patterns, but the present invention is not necessarily limited to this viewpoint. In that case, each vapor deposition mask pattern may be substantially the same, or two or more different mask patterns may be formed on the flexible film 11A.

  As illustrated, the flexible film 11A can be sufficiently flexible and can be wound to form a roll 15A. The ability to wind flexible film 11A into a roll provides the distinct advantage that film roll 15A has substantially compact dimensions for use in storage, shipping, and in-line deposition stations. The flexible film 11A can be stretched and can be stretched to achieve accurate alignment. For example, the flexible film may be stretchable in the down direction of the web, in the cross direction of the web, or both. In an exemplary embodiment, the flexible film 11A may include a polymer film. The polymer film may consist of one or more of a variety of polymers including polyimide, polyester, polystyrene, polymethylmethacrylate, polycarbonate, or other polymers. Polyimide is a particularly useful polymer for the flexible film 11A. Polyester is also a particularly useful polymer for the flexible film 11A. Preferably, the film 70 is a polymer substrate.

  The opening mask 10A is an object of various shapes and dimensions. For example, in the exemplary embodiment, the web of flexible film 11A is at least about 50 centimeters long or 100 centimeters long, and often about 10 meters long, or even 100 meters long. There may be. Also, the web of flexible film 11A may be at least about 3 cm wide and less than about 200 microns, less than about 30 microns, or even less than about 10 microns thick.

  FIG. 2a is a plan view of a portion of an aperture mask 10B according to the present invention. In an exemplary embodiment, as shown in FIG. 2a, the aperture mask 10B is formed from a polymer material. Using a polymer material for the aperture mask 10B can provide advantages over other materials, including ease of manufacture of the aperture mask 10B, cost reduction of the aperture mask 10B, and other advantages. Compared to thin metal aperture masks, polymer aperture masks are much less prone to damage due to accidental formation such as folds or permanent bends. In addition, some polymer masks can be cleaned with acids.

  As shown in FIGS. 2a and 2b, the aperture mask 10B is formed with a pattern 12B that defines a number of vapor deposition apertures 14 (only vapor deposition apertures 14A-14E are labeled). The arrangement and shape of the deposition openings 14A-14E in FIG. 2b are simplified for illustration purposes and are subject to wide variation according to the application and the circuit design envisaged by the user. Pattern 12B defines at least a portion of the circuit layer and may generally take several different arbitrary types. In other words, the deposition openings 14 can form any pattern that depends on the circuit layers that are created in the deposition process using the preferred circuit elements or opening mask 10B. For example, although pattern 12B is illustrated as including several similar sub-patterns (sub-patterns 16A-16C are labeled), the invention is limited in that respect. is not.

  FIG. 2c is a plan view of a single deposition opening 14C in a mask 10B according to the present invention. FIG. 2d is a cross-sectional view of the vapor deposition opening 14C in the mask 10B according to the present invention. The vapor deposition opening 14 </ b> F is surrounded by a frame 17. The frame 17 is a portion of the mask 10B having an increased thickness, generally greater than the standard thickness of the mask 10B. In the embodiment shown in FIGS. 2c and 2d, one surface 18B of the mask 10B remains substantially planar when approaching the edge 19 of the deposition opening 14F, while another surface 18A of the mask 10B is deposited. It rises when it approaches the edge 19 of the opening 14F, and thereby the frame 17 is made. In an alternative embodiment, not shown, no surface of the mask remains substantially planar when approaching the edge of the deposition opening.

  The aperture mask 10B can be used in a deposition process, such as a vapor deposition process, in which material is deposited through a deposition opening 14 to a deposition substrate to define at least a portion of a circuit. Conveniently, the aperture mask 10B allows the deposition of the desired material and at the same time form the material in the desired pattern. Therefore, a separate patterning step following or preceding vapor deposition is not necessary. The aperture mask 10B may be used to make a variety of electronic circuits including integrated circuits, such as integrated circuits including complementary (both n-channel and p-channel) transistor elements. In addition, organic (eg, pentacene) or inorganic (eg, amorphous silica) semiconductor materials may be used to make integrated circuits in accordance with the present invention. In some embodiments, the aperture mask 10B may be used to make an organic light emitting diode (OLED). In some circuits, both organic and inorganic semiconductors may be used.

  The aperture mask 10B is particularly useful for making an electronic display circuit such as a liquid crystal display or an organic light emitting display, a low-cost integrated circuit such as a wireless authentication circuit, or an arbitrary circuit mounted with a thin layer transistor. sell. In addition, circuits utilizing organic semiconductors can benefit from various aspects of the present invention, as described in greater detail below. In addition, because the aperture mask 10B can be formed from a flexible web of polymeric material, it can be used in an in-line process, as described in greater detail below.

  The one or more deposition openings 14 can be formed to have a width of less than about 1000 microns, less than about 500 microns, less than about 250 microns, or even less than about 200 microns. By forming the deposition openings 14 to have a width in these ranges, the dimensions of the circuit elements may be reduced. Further, the distance (gap) between the two deposition openings (eg, the distance between the deposition openings 14C and 14D) is less than about 1000 microns, less than about 500 microns, less than about 250 microns to reduce the dimensions of various circuit elements. Or even less than about 200 microns.

  Forming the aperture mask 10B from a web of polymer film is generally cheaper, less complex and / or more accurate than those required for other aperture masks such as silicon masks or metal masks. Possible manufacturing processes. These large masks can then be used in a deposition process to create circuit elements that are distributed at large distances over a large surface area. Furthermore, it is possible to make a large integrated circuit in an in-line process by forming a mask on a large polymer web.

  3 and 4 are plan views of aperture masks 10C and 10D, including vapor deposition apertures separated by a relatively large width. In addition, the aperture masks 10C and 10D are formed from a web of film so that the deposition process can be performed in-line. FIG. 3 illustrates an aperture mask 10C that includes a pattern 12C of vapor deposition apertures. Pattern 12C may define at least one dimension greater than about 1 centimeter, greater than about 25 centimeters, greater than about 100 centimeters, or even greater than about 500 centimeters. In other words, the distance X may be in these ranges. In this way, circuit elements that are separated by a greater distance than before can be made using a vapor deposition process. This configuration may be advantageous, for example, in the manufacture of large area flat panel displays or detectors.

  For some circuit layers, complex patterns may not be required. For example, the opening mask 10D of FIG. 4 includes at least two deposition openings 36A and 36B. In that case, the two deposition openings 36A and 36B can be separated by a distance X that is about 1 centimeter, 25 centimeters, more than 100 centimeters, or even more than about 500 centimeters. The ability to deposit and pattern circuit layers in a single deposition process, with elements separated by these large distances, makes a circuit that requires large separation between two or more elements. Can be very convenient. A circuit that controls or forms the pixels of a large electronic display is one example.

FIG. 5 is a plan view of the opening mask 10E. As shown, the aperture mask 10E is formed in a web of a flexible material 11E such as a polymer material. Aperture mask 10E defines several patterns _12E 1 _{~12E 3.} In some cases, different patterns 12E may define different circuit layers, and in other cases, different patterns 12E define different portions of the same circuit layer. In some cases, sewing techniques can be used when the first and second patterns 12E ₁ and 12E ₂ define different portions of the same circuit configuration. In other words, two or more patterns can be used for individual deposition to define a single circuit configuration. For example, sewing techniques can be used to avoid relatively long deposition openings, closed curves, or any opening pattern that results in a portion of the opening mask being poorly supported or not supported at all. In the first deposition, one mask mask pattern forms part of the morphology, and in the second deposition, the other mask pattern forms the remainder of the morphology.

In still other cases, the different patterns 12E may be substantially the same. In that case, each different pattern 12E may be used to create a substantially similar deposited layer for a different circuit. For example, in an in-line web process, a web made of a vapor deposition substrate may pass through the opening mask 10E at a right angle. After each deposition, the web of deposited substrate may move in-line for the next deposition. Thus, the pattern 12E ₁ can be used to deposit a layer on a web composed of a deposition substrate, and then 12E ₂ is used further down the web composed of a deposition substrate in a similar deposition process. be able to. Each portion of the aperture mask 10E that contains the pattern may also be reused on a different portion of the deposition substrate, or on one or more different deposition substrates. More details of the in-line deposition system are described below.

  The aperture mask of the present disclosure may be made by any suitable method including mold forming and drilling methods. In general, the aperture mask of the present disclosure is made by flame perforation.

  6 and 7 are diagrams of an apparatus for making a flame photoperforated aperture mask of the present disclosure. FIG. 6 illustrates a side view of the device 510. FIG. 7 illustrates a front view of a device having a backing roll 514, shown in very thin lines, and with idler rollers 555, 558 and motor 516 removed for clarity.

  Device 510 includes a frame 512. The frame 512 includes an upper part 512a and a lower part 512b. Apparatus 510 includes a backing roll 514 having an external support surface 515. The support surface 515 preferably includes a pattern 590 of the lower portion indicated by a very thin line. The portion of the support surface 515 between the lower portion 590 and the lower portion 590 together make up the support surface 515 of the backing roll 514. The lower portion 590 forms a recess pattern on the support surface 515. The lower portion 590 may be a plurality of pressed or concave portions, or indentations along a plurality of support surfaces 515. These lower portions 590 are preferably etched into the support surface 515. Alternatively, the pattern of the lower portion 590 may be drilled, ground or carved into the support surface 515. The pattern of the lower portion 590 represents at least part of one or more electronic circuit elements, or at least part of one or more electronic circuits, or at least part of one or more integrated circuits. It is a pattern to define.

  Preferably, the backing surface 515 of the backing roll 514 is temperature controlled in relation to the ambient temperature around the device 510. The backing surface 515 of the backing roll 514 may be temperature controlled by any suitable method known in the art. Preferably, the backing surface 515 of the backing roll 514 is cooled by supplying cooled water to the inlet portion 556a of the hollow shaft 556, out to the backing roll 514, and out of the outlet portion 556b of the hollow shaft 556. Is done. The backing roll 514 rotates about its axis 513. The device 510 includes a motor 516 attached to the lower portion 512b of the frame. The motor drives the belt 518, which in turn rotates a shaft 556 that is attached to the backing roll 514, thus driving the backing roll 514 about its axis 513.

  The device 510 includes a burner 536 and its associated piping 538. The burner 536 and the burner pipe 538 are attached to the upper part 512 a of the frame 512 by a burner support 535. Burner support 535 may be pivoted about pivot point 537 by actuator 548 to move burner 536 relative to support surface 515 of backing roll 514. The support 535, as described in more detail below with respect to FIGS. 9 and 10, to position the burner 536 at a preferred distance, either close to or away from the support surface 515 of the backing roll 514, It may be turned by an actuator 548. The burner 536 includes a gas pipe 538 at each end for supplying gas to the burner 536. The device 510 may comprise an optional exhaust hood (not shown) built on the device 510.

  In one embodiment of the present invention, the device 510 comprises a preheat roll 520 attached to the lower portion 512b of the frame 512. The preheating roll 520 includes an outer roll layer 522. The outer roll layer 522 includes an outer surface 524. Preferably, the outer roll layer is made from an elastomer, preferably a high operating temperature elastomer. Preferably, the preheat roll 520 is a nip roll and may be positioned relative to the backing roll 514 to sandwich the film between the nip roll 520 and the backing roll 514. However, it is not necessary for the preheating roll 520 to be a nip roll; instead, the preheating roll may be positioned away from the backing roll 514 so that it does not contact the backing roll 514. The nip roll 520 rotates freely about its axis 560 and is attached to a roll support 562. The connection 546 is attached to the roll support 562. The nip roll 520 may be positioned using the actuator 544 relative to the backing roll 514. When the actuator 544 is extended (as shown in FIG. 8), the connection 546 rotates counterclockwise and instead the roll support 562 counterclockwise until the nip roll 520 contacts the backing roll 514. Rotate to. Actuator 544 can control the movement between nip roll 520 and backing roll 514, and thus can control the pressure between nip roll 520 and backing roll 514. Stop device 564 is attached to lower frame 512b to prevent movement of connection 546 beyond lower frame 512b, which helps limit the pressure applied by nip roll 520 against backing roll 514.

  In another embodiment of the present invention, the device 510 comprises a temperature controlled shield 526 attached to the nip roll 520 with a fitting 566 to form an assembly. Therefore, when the actuator 544 turns the nip roll 520, the shield 526 moves with the nip roll, as described above. The shield 526 may be positioned by a bolt 532 and a groove 534 attached to the fitting 566 in relation to the nip roll 520. The temperature controlled shield 526 preferably includes a plurality of water cooled piping 528. However, other methods of providing a temperature controlled shield, such as a water cooled plate, an air cooled plate, or other methods in the art may be used. Preferably, temperature controlled shield 526 is positioned between burner 536 and nip roll 520. In this position, the shield 526 can be used to protect the nip roll 520 from some of the heat generated from the burner 536, and thus control the temperature of the outer surface 524 of the nip roll 520, which However, the flame perforation process performed by the burner 536 has the advantage of reducing wrinkles or other defects in the film while maintaining high film speed.

  In yet another embodiment of the present invention, the device 510 comprises an optional applicator device 550 attached to the lower portion 512b of the frame 512. The device 510 includes a plurality of nozzles 552. In one embodiment, the application device 550 is an air application device that applies air onto the backing roll 514. In another embodiment, the dispenser 550 is a liquid dispenser that applies liquid to the backing roll 514. Preferably the liquid is water, but other liquids may be used instead. If liquid is applied by the applicator 550, then preferably air is also supplied to the individual nozzles to atomize the liquid prior to application to the backing roll. The manner in which air or liquid is applied to the backing roll 514 can vary by those skilled in the art depending on the pressure, amount, or speed of the air or water being pumped through the nozzle 552. As will be explained below, it is not intended to be limited to any theory, but if air or water is applied to the backing surface 515 of the backing roll 514 before the film contacts the backing surface 515. This air or water application helps to remove some of the condensation formed on the support surface 515 or to actively control the amount of water between the film and the support surface It is believed that additional water is applied, thereby helping to eliminate wrinkles or other defects formed in the film during the flame perforation process performed by burner 536.

  The apparatus 510 includes a first idle roller 554, a second idle roller 555, and a third idle roller 558 attached to the lower portion 512b of the frame 512. Each idle roller 554, 555, 558 is provided with its own shaft, and the idle rollers may rotate freely about their shaft.

  FIG. 7a shows an enlarged view of a burner 536 useful for the device 510 of FIG. Various burners 536 are available, for example, from Flynn Burner Corporation in New Rochelle, NY, from Aerogen Company, Ltd. in Alton, United Kingdom, and the United Kingdom. Commercially available from Sherman Treaters Ltd. of Thame, United Kingdom. One desirable burner is an 81-port (32-inch) substantial length stainless steel, cast iron housing, deckled to 69-inch (27-inch) length from Flynn Burner Corporation. Commercially available as the 850 series with a deckled ribbon mounted on. Ribbon burners are most preferred for flame perforation of polymer films, but other types of burners such as perforated port or grooved burners may also be used. Preferably, the apparatus comprises a mixer to mix the oxidant and fuel prior to supplying the flame used in the flame drilling process of the present invention.

  FIG. 8 illustrates the way the film travels through the device 510 and the method of flame perforating one exemplary film. Film 570 includes a first surface 572 and a second surface 574 opposite the first surface 572. The film travels around the first idle roller 554 into the device 510. From there, the film is pulled by a motor driven backing roll 514. In this position, the film is positioned between the nip roll 520 and the backing roll 514. In this step of the process, the second surface 574 of the film 570 is cooled with a water-cooled backing roll 514, and the first surface 572 of the film 570 is simultaneously heated by the preheating or outer surface 524 of the nip roll 520. This process of preheating film 570 with nip roll surface 522 of nip roll 520 prior to flame perforating film with burner 536 has the effect of reducing wrinkles and other defects in the film after the flame perforation process performed by burner 536. I will provide a.

  The temperature of the outer support surface 515 of the backing roll 514 may be controlled by the temperature of the water flowing through the shaft 556 and through the backing roll 514. The temperature of the external support surface 515 can vary depending on the proximity to the burner 536 that generates a large amount of heat from the flame. Furthermore, the temperature of the support surface 515 depends on the material of the support surface 515.

  The temperature of the outer surface 524 of the outer layer 522 of the nip roll 520 is controlled by several factors. First, the temperature of the burner flame affects the outer surface 524 of the nip roll 520. Second, the distance between burner 536 and nip roll 520 affects the temperature of outer surface 524. For example, placing the nip roll 520 closer to the burner 536 increases the temperature of the outer surface 524 of the nip roll 520. Conversely, placing the nip roll further away from the burner 536 lowers the temperature of the outer surface 524 of the nip roll 520. The distance between the axis of the nip roll 520 and the center of the burner surface 540 of the burner 536 is represented by the angle alpha (α) using the axis 513 of the backing roll 514 as the apex of the angle. The angle alpha (α) represents a portion of the periphery of the backing roll or the portion of the backing roll arc between the nip roll 520 and the burner 536. It is preferred that the angle alpha (α) be as small as possible without exposing the nip roll to heat from the burner as the material on the outer surface begins to decompose. For example, the angle alpha (α) is preferably less than or equal to 45 °. Third, the temperature of the outer surface 524 of the nip roll 520 can also adjust the position of the temperature controlled shield 526 between the nip roll 520 and the burner 536 using the bolt 532 and the groove 534 of the fitting 566. May be controlled by Fourth, the nip roll 520 may have cooled water flowing through the nip roll, similar to the backing roll 514 described above. In this embodiment, the temperature of the water flowing through the nip roll can affect the surface temperature of the outer surface 524 of the nip roll 520. Fifth, the surface temperature of the support surface 515 of the backing roll 514 can affect the temperature of the outer surface 524 of the nip roll 520. Finally, the temperature of the outer surface 524 of the nip roll 520 can be affected by the ambient temperature of the air surrounding the nip roll 520.

  Preferred temperatures for the backing surface 515 of the backing roll 514 are in the range of 7.2 ° C. (45 ° F.) to 54 ° C. (130 ° F.), and more preferably 10 ° C. (50 ° F.) to 40. It is in the range of 6 ° C. (105 ° F.). The preferred temperature of the nip roll surface 524 of the nip roll 520 is in the range of 73.9 ° C. (165 ° F.) to 204 ° C. (400 ° F.), and more preferably 82.2 ° C. (180 ° F.) to 121 ° C. (250 In the range of ° F). However, the nip roll surface 524 should not rise above a temperature at which the material on the nip roll surface may begin to melt or decompose. Although the preferred temperature of the backing surface 515 of the backing roll 514 and the preferred temperature of the nip roll surface 524 of the nip roll 520 are listed above, one of ordinary skill in the art will recognize the The preferred temperature of the support surface 515 and the nip roll surface 524 to reduce the flame and perforate the film can be selected depending on the film material and the rotational speed of the backing roll 514.

  Returning to the process steps, in this position between the preheat roll 520 and the backing roll 514, the preheat roll preheats the first surface 572 of the film 570 before contacting the film with the burner flame.

  In the next step of the process, the backing roll 514 continues to rotate the film 570 between the burner 536 and the backing roll 514. This special process is also illustrated in FIGS. When the film comes into contact with the flame of the burner 536, the portion of the film that is directly supported by the cooled metal support surface causes the heat of the flame to pass through the film material due to the excellent thermal conductivity of the metal, and the backing roll 514 Of cold metal, will not be perforated to be immediately deprived of the film. However, air entrapment is trapped behind the etched recess, ie, the portion of the film material that covers the lower portion 590 of the cooled support material. The thermal conductivity of the air trapped in the depression is much less than the thermal conductivity around the metal, so that heat is not removed from the film. As a result, the part of the film located above the recess is melted and perforated. As a result, the perforations formed in the film 570 generally correlate with the shape of the lower portion 590. At approximately the same time that the film material melts in the area of the lower portion 590, a frame 620 of film material from the inside of the heat-shrinked perforations is formed around each perforation.

  After the burner 536 flame pierces the film, the backing roll 514 continues to rotate until the film 570 is finally pulled by the idler roller 555 from the backing surface 515 of the backing roll 514. From there, the flame pierced film 570 is pulled around an idler roller 558 by another drive roller (not shown). The flame photoperforated film may be made into a long, wide web that can be rolled as a roll for convenient storage and shipping by the device 510.

  As described above, the device 510 applies either air or water to the backing surface 515 of the backing roll 514 before the film 570 contacts the backing surface between the backing roll 514 and the nip roll 520. An optional applying device 550 may be provided. Without being limited by any theory, it is believed that controlling the amount of water between the film 570 and the support surface 515 will help reduce flame photoperforated film wrinkles or other defects. There are two ways to control the amount of water between the film 570 and the support surface 515. First, if the applicator 550 blows air on the support surface, this action helps reduce the amount of water that accumulates between the film 570 and the support surface 515. The accumulated water is the result of condensation that forms on the backing roll when the water-cooled support surface 515 comes into contact with the surrounding environment. Second, the applicator 550 may apply water or some other liquid to the support surface 515 to increase the amount of liquid between the film 570 and the support surface. Either way, a certain amount of liquid between the film 570 and the support surface 515 helps increase the traction between the film 570 and the support surface 515, which in turn is a flame perforated film. It may be possible to help reduce the amount of defects or other defects. The position of the nozzle 552 of the applicator 550 relative to the center line of the burner 536 is represented by the angle beta (β), with the apex of the angle being on the axis of the backing roll 514. Preferably, the applicator 550 is at an angle beta (β) that is greater than the angle alpha (α) so that air or water is applied to the backing roll 514 prior to the nip roll 520.

  9 and 10 schematically illustrate yet another embodiment of the apparatus of the present invention. 9 and 10 illustrate the importance of the placement of the flame 624 relative to the backing surface 515 of the backing roll 514 during the flame drilling process. In FIG. 9, the burner 536 is at a distance relative to the backing roll 514, and in FIG. 10, the burner 536 is disposed closer to the backing roll 514 than in FIG. 4. The relative distance between burner 536 and backing roll 514 may be adjusted by burner support 535 and actuator 548, as described above in connection with FIG.

  There are several distances represented by reference characters in FIGS. The origin “O” is measured at a tangent line relative to the first surface 572 of the film wrapped around the backing roll 514. The distance “A” represents the distance between the ribbon 542 of the burner 540 and the first surface 572 of the film 570. The distance “B” represents the flame length measured from the ribbon 542 of the burner 536 where the flame occurs to the flame tip 626. The flame is a bright cone supported by a burner and can be measured from the origin to the tip by methods known in the art. Indeed, the ribbon burner 536 has a plurality of flames, preferably all the tips are in the same position relative to the burner housing and are preferably the same length. However, the flame tip may change due to, for example, a non-uniform ribbon structure or a non-uniform gas flow into the ribbon. For purposes of illustration, multiple flames are represented by a single flame 624. The distance “D” represents the distance between the surface 540 of the burner 536 and the first surface 572 of the film 570. The distance “E” represents the distance between the ribbon 542 of the burner 536 and the surface 540 of the burner 536.

  In FIG. 9, the distance “C1” represents the relative distance between the distance A and the distance B if they are subtracted from A to B. Since the flame 624 is located away from the backing roll 514 and thus is not hitting the film 570 on the backing roll 514 and is defined as a “non-flaming flame”, this distance C1 is a positive distance is there. In this position, the flame can be easily measured in free space by the technician, and this is an uninterrupted flame. In contrast, FIG. 10 illustrates a burner that is much closer to the film 570 on the backing roll 514 such that the tip 626 of the flame 624 actually strikes the film 570 that is on the support surface 515 of the backing roll 514. . In this arrangement, “C2” represents the distance A subtracted from the distance B, and is always a negative number. Preferably, the distance A drawn from the distance B is greater than -2 mm. Perforated films can be produced at higher speeds while maintaining film quality at large negative C2 distances.

  Additional disclosure relating to flame perforation of films can be found in US Patent Application Publication Nos. 2004 / 0070100A1 and 2005/0073070, which are incorporated herein by reference.

  The aperture mask of the present disclosure may be used for patterned deposition of materials to make electronic circuit elements. 11 and 12 are simplified views of the in-line aperture mask deposition technique. In FIG. 11, the web of polymer film 10F formed with the vapor deposition mask patterns 96 and 93 advances past the vapor deposition substrate 98. The first pattern 93 in the web of polymer-film 10F can be aligned with the deposition substrate 98, and a deposition process can be performed to deposit the material on the deposition substrate 98 according to the first pattern 93. . Next, the web of polymer film 10F can be moved so that the second pattern 96 is aligned with the deposition substrate 98 (as indicated by arrow 95), and the second deposition process is performed. The The process can be repeated for any number of patterns formed in a web of polymer film 10F. The deposition mask pattern of the polymer film 10F can be reused by repeating the above process on different deposition substrates or different parts of the same substrate.

  FIG. 12 illustrates another in-line aperture mask deposition technique. In the example of FIG. 12, the vapor deposition substrate 101 may constitute a web. In other words, both the opening mask 10G and the vapor deposition substrate 101 may include a web made from a polymer material if possible. Alternatively, the vapor deposited substrate web 101 may include a transport web that carries a series of discontinuous substrates. The first pattern 105 in the aperture mask web 10G can be aligned with the deposition substrate web 101 for the first deposition process. Next, one of the aperture mask web 10G and the vapor deposition substrate web 101 is such that the second pattern 107 in the aperture mask web 10G is aligned with the vapor deposition substrate web 101 and the second vapor deposition process is performed. , Or both can move (as indicated by arrows 102 and 103). If each of the aperture mask patterns in aperture mask web 10G is substantially the same, the technique illustrated in FIG. 12 can be applied to a similar deposition layer at several successive locations along deposition substrate web 101. Can be used to deposit.

  FIG. 13 is a simplified block diagram of a deposition station that can use an aperture mask web in a deposition process in accordance with the present invention. In particular, the deposition station 110 can be constructed to perform a deposition process in which material is vaporized and deposited through an aperture mask on a deposition substrate. The material to be deposited can be any material, including semiconductor materials, dielectric materials, or conductive materials, used to form various elements within an integrated circuit. For example, organic or inorganic materials can be deposited. In some cases, both organic and inorganic materials can be deposited to make a circuit. In another example, amorphous silicon may be deposited. The deposition of amorphous silicon generally requires high temperatures exceeding about 200 degrees Celsius. Some embodiments of the polymer web described herein can withstand these high temperatures, and therefore amorphous silicon is deposited and patterned to make integrated circuits or integrated circuit elements. Enable. In another example, a pentacene-based material can be deposited. In yet another example, an organic light emitting diode (OLED) material can be deposited.

  The flexible web 10H formed with the aperture mask pattern passes through the deposition station 110 so that the mask can be placed in close proximity to the deposition substrate 112. The vapor deposition substrate 112 may include any of a variety of materials depending on the desired circuit to be made. For example, the vapor deposition substrate 112 may include a flexible polymer, such as polyimide or polyester, and optionally a flexible material that forms a web. Furthermore, if the desired circuit is a circuit of a transistor for an electronic display such as a liquid crystal display, the vapor deposition substrate 112 may include a back surface of the electronic display. Any vapor deposition substrate such as a glass substrate, a silicon substrate, a hard plastic substrate, a metal foil coated with an insulating layer, or the like may be used. In any case, the vapor deposition substrate may or may not include a previously formed form.

  The deposition station 110 is usually a vacuum chamber. After the pattern in the aperture mask web 10H is fixed in close proximity to the deposition substrate 112, the substance 116 is vaporized by the deposition unit 114. For example, the vapor deposition unit 114 may include a boat of material that is heated to vaporize the material. The vaporized material 116 is deposited on the deposition substrate 112 through the deposition openings of the aperture mask web 10H to define at least a portion of the circuit layer on the deposition substrate 112. By vapor deposition, the material 116 forms a vapor deposition pattern that is defined by the pattern in the aperture mask web 10H. The aperture mask web 10H may include sufficiently small apertures and gaps to facilitate making small circuit elements using the deposition process described above. Furthermore, the pattern of vapor deposition openings in the opening mask web 10H may have large dimensions as described above. Other suitable deposition techniques include electron beam deposition, various modes of sputtering, and pulsed laser deposition.

  However, a drooping problem may occur when the pattern in the aperture mask web 10H is made large enough, for example to include a large dimension pattern. In particular, when the aperture mask web 10H is placed close to the vapor deposition substrate 112, the aperture mask web 10H may hang down as a result of the attractive force. This problem is most apparent when the opening mask 10H is disposed under the deposition substrate as shown in FIG. Moreover, the sagging problem becomes worse as the size of the aperture mask web 10H is made larger.

  The present invention may implement one of various techniques that address the sag problem or otherwise control the sag in the aperture mask during the deposition process. For example, the aperture mask web defines a first surface that can be removably adhered to the surface of the deposition substrate to facilitate intimate contact between the aperture mask and the deposition substrate during the deposition process. May be. In this way, sagging can be controlled or avoided. In particular, the first surface of the flexible aperture mask 10H may include a pressure sensitive adhesive. In that case, the first surface can be removably bonded to the vapor deposition substrate 112 via a pressure sensitive adhesive and then can be removed after the vapor deposition process or removed as desired. You can change the position.

  Another way to control sagging is to use magnetic force. For example, referring again to FIG. 1, the aperture mask 10A may include a polymer and a magnetic material. The magnetic material may be applied or laminated to the polymer or impregnated in the polymer. For example, the magnetic particles can be dispersed within the polymer material used to form the aperture mask 10A. When magnetic force is used, the magnetic field can be applied in the deposition station to attract or repel the magnetic material to control the sag in the aperture mask 10A.

  For example, as illustrated in FIG. 14, the deposition station 120 may include a magnetic structure 122. The opening mask 10I may be an opening mask web containing a magnetic material. The magnetic structure 122 may attract the aperture mask web 10I to reduce, eliminate, or otherwise control the sag in the aperture mask web 10I. Alternatively, the magnetic structure 122 may be arranged such that the sag is controlled by repelling the magnetic material in the aperture mask web 10I. In that case, the magnetic structure 122 is disposed on the opening mask 10I side, which is the opposite side of the vapor deposition substrate 112. For example, the magnetic structure 122 can be realized by an arrangement of permanent magnets or electromagnets.

  Another way to control sag is through the use of static electricity. In that case, the aperture mask 10A may include a web of electrostatically coated polymer film. If an electrostatic coating is used to control sag, the magnetic structure 122 (FIG. 14) may not be necessary, but may be useful in some cases where static electricity is used. Charge may be applied to the aperture mask web, the vapor deposition substrate web, or both to facilitate electrostatic attraction so as to promote sagging reduction.

  Yet another way to control sagging is to stretch the aperture mask. In that case, a stretching mechanism can be introduced to stretch the aperture mask in an amount sufficient to reduce, eliminate or otherwise control sag. When the mask is stretched firmly, the sagging is reduced. In that case, the aperture mask may need to have a favorable elastic modulus. As described in greater detail below, stretching the web in the lateral direction, in the downward direction of the web, or in both directions can be used to reduce sagging and align the aperture mask. . To facilitate alignment using stretching, the aperture mask can allow elastic stretching without damage. The amount stretched in one or more directions may be greater than 0.1 percent or even greater than 1 percent. Furthermore, if the deposition substrate is a web of material, it can also be stretched for sag reduction and / or alignment purposes. Also, the aperture mask web, the vapor deposition substrate web, or both may include features that minimize distortion and promote more uniform stretching, such as perforations, reduced thickness areas, gaps, or the like. The gap can be added near the edge of the patterned area of the web, providing better control of alignment and more uniform stretching when the web is stretched. The gap may be formed to stretch in a direction parallel to the direction in which the web is stretched.

  FIG. 15a is a perspective view of an exemplary stretching apparatus for stretching an aperture mask web according to the present invention. Stretching can be performed in the downward direction of the web, in the lateral direction of the web, or in both the lateral and downward directions. The stretching unit 130 may include a relatively large vapor deposition hole 132. The aperture mask can cover the deposition hole 132 and the deposition substrate can be placed in proximity to the aperture mask. The material can be vaporized upward through the deposition holes 132 and deposited on the deposition substrate according to the pattern defined in the aperture mask.

  The stretching device 130 may include several stretching mechanisms, 135A, 135B, 135C, and 135D. Each stretching mechanism 135 may protrude upward through a hole 139 in the stretching mechanism, as shown in FIG. 15b. In one particular example, each stretching mechanism 135 includes a top clamp portion 136 and a bottom clamp portion 137 on which an aperture mask can be secured together. The aperture mask can then be stretched by a stretching mechanism 135 that moves away from each other while the aperture mask is fixed. The movement of the stretching mechanism can be defined by whether the aperture mask is stretched in the down direction of the web, in the cross direction of the web, or in both directions. The stretching mechanism 135 can move along one or more axes.

  Although the drawing mechanism 135 is illustrated as protruding from the upper end of the drawing device 130, it can also protrude from the bottom of the drawing device 130 instead. In particular, if the stretching device 130 is used to control the sagging of the aperture mask, the stretching mechanism will normally protrude from the bottom of the stretching device 130. Alternative methods of stretching the aperture mask may also be used to either control the sag of the aperture mask or to properly position the aperture mask in the deposition process. A similar stretching mechanism may also be used to stretch the vapor deposited substrate web.

  16 and 17 are plan views of a stretching apparatus illustrating the stretching of the aperture mask in the downward direction of the web (FIG. 16) and in the lateral direction of the web (FIG. 17). As shown in FIG. 16, the stretching mechanism 135 secures the aperture mask web 10J, and then moves the aperture mask web 10J in the direction indicated by the arrow to stretch the web downward. . Any number of stretching mechanisms 135 may be used. In FIG. 17, the stretching mechanism 135 stretches the aperture mask web 10K in the web transverse direction, as indicated by the arrows. Furthermore, stretching in both the transverse direction of the web and the downward direction of the web can be performed. In fact, stretching along any one or more axes can be performed.

  FIG. 18 is a plan view of a stretching apparatus 160 that can be used to stretch both the aperture mask web 10L and the vapor deposition substrate web 162. FIG. In particular, the stretching apparatus 160 includes a first set of stretching mechanisms 165A to 165D that secure the opening mask web 10L in order to stretch the opening mask web 10L. Further, the stretching device 160 includes a second set (167A to 167D) of a stretching mechanism for fixing the vapor deposition substrate web 162 in order to stretch the vapor deposition substrate web 162. Stretching can reduce sagging of the webs 10L and 162, and can be used to achieve precise alignment of the aperture mask web 10L and the deposition substrate web 162. Although the arrows illustrate stretching the web in the downward direction, stretching in the cross direction of the web or in both the down direction and the cross direction of the web can also be performed according to the present invention.

  FIG. 19 is a block diagram of an in-line deposition system 170 in accordance with an embodiment of the present invention. As shown, the in-line deposition system 170 includes a number of deposition stations 171A-171B (hereinafter referred to as deposition stations 171). Deposition station 171 deposits the material on the deposition substrate web at substantially the same time. Next, after vapor deposition, the vapor deposition substrate 172 moves so that subsequent vapor deposition can be performed. Each deposition station also has an open mask web that is fed in a direction across the deposition substrate web. In general, the aperture mask web is fed in a direction perpendicular to the traveling direction of the vapor deposition substrate. For example, the aperture mask web 10M may be used by the deposition station 171A, and the aperture mask web 10N may be used by the deposition station 171B. While each aperture mask web 10 is illustrated as including two deposition stations that may include one or more of the forms outlined above, any number of deposition stations may be in-line in accordance with the present invention. Can be implemented. Multiple deposition substrates may also pass through one or more deposition stations.

  The deposition system 170 may include drive mechanisms 174 and 176 to move the aperture mask web 10 and the deposition substrate 172, respectively. For example, each drive mechanism 174, 176 may implement one or more magnetic clutch mechanisms to drive the web and supply the desired amount of tension. The control unit 175 can be coupled to the drive mechanisms 174 and 176 to control the movement of the web in the deposition system 170. The system may also include one or more temperature control units to control the temperature within the system. For example, the temperature control unit can be used to control the temperature of the deposition substrate in one or more deposition stations. Temperature control may ensure that the temperature of the vapor deposition substrate does not exceed 250 degrees Celsius or does not exceed 125 degrees Celsius.

  Further, the control unit 175 may be linked with different deposition stations 171 to control the alignment of the aperture mask web 10 and the deposition substrate web 172. In that case, an optical sensor and / or an electric micrometer may be introduced into the deposition station 171 along with the stretching device to detect and control alignment during the deposition process. In this way, the system can be fully automated to reduce human error and increase throughput. After all of the desired layers have been deposited on the deposited substrate web 172, the deposited substrate web 172 can be cut or otherwise divided into any number of circuits. The system is particularly useful for making low cost integrated circuits, such as displays that include wireless authentication (RFID) circuits or organic light emitting diodes (OLEDs).

  20 and 21 are cross-sectional views of representative thin film transistors that can be made in accordance with the present invention. In accordance with the present invention, thin film transistors 180 and 190 can be made without photolithography in an additive or subtractive process. Alternatively, thin film transistors 180 and 190 can be made using only an open mask deposition technique as described herein. Alternatively, one or more bottom layers may be photolithographically in an additive or subtractive process, along with at least two top layers formed by the aperture mask deposition technique described herein. Can be patterned. Importantly, the aperture mask deposition technique achieves a sufficiently small circuit configuration in the thin film transistor. Advantageously, if an organic semiconductor is used, the present invention can facilitate making a thin film transistor where the organic semiconductor is not the top layer of the circuit. To be precise, the electrode pattern can be formed over the organic semiconductor material without photolithography. This advantage of the aperture mask 10 can be exploited while at the same time achieving an acceptable size of circuit elements and possibly improved device performance.

  An additional advantage of the present invention is that the aperture mask can be used to deposit a patterned active layer, which may enhance device performance, particularly when the active layer includes an organic semiconductor. The patterning process is not compatible. In general, the semiconductor may be amorphous (eg, amorphous silicon) or polycrystalline (eg, pentacene).

  Thin film transistors are commonly introduced in circuits, including a variety of different, eg, wireless authentication (RFID) circuits and other low cost circuits. Moreover, the thin film transistors can be used as control elements for liquid crystal display pixels or other flat panel display pixels such as organic light emitting diodes. There are also many other applications for thin film transistors.

  As shown in FIG. 20, the thin film transistor 180 is formed on the vapor deposition substrate 181. Thin film transistor 180 represents one embodiment of a transistor, where all layers are deposited using an opening mask and no layers are formed using etching or lithographic techniques. The aperture mask deposition techniques described herein provide a distance between electrodes of less than about 1000 microns, less than about 500 microns, less than about 250 microns, or even less than about 200 microns while simultaneously using conventional etching or photolithography. It is possible to make the thin film transistor 180 while avoiding this process.

  In particular, the thin film transistor 180 may include a first vapor-deposited conductive layer 182 formed on the vapor deposition substrate 181. The deposited dielectric layer 183 is formed on the first conductive layer 182. A second deposited conductive layer 184 that defines a source electrode 185 and a drain electrode 186 is formed on the deposited dielectric layer 183. A vapor deposition active layer 187 such as a vapor deposition semiconductor layer or a vapor deposition organic semiconductor layer is formed on the second vapor deposition conductive layer 184.

  An aperture mask deposition technique using an in-line deposition system represents one exemplary method of making the thin film transistor 180. In that case, each layer of thin film transistor 180 may be defined by one or more deposition openings in flexible opening mask web 10. Alternatively, one or more layers of the thin film transistor may be defined by several different patterns in the aperture mask web 10. In that case, stitching techniques may be used as described above.

  By forming the deposition openings 14 in the aperture mask web 10 to be sufficiently small, one or more forms of the thin film transistor 180 may be less than about 1000 microns, less than about 500 microns, less than 250 microns, or even 200. Submicron can be made. In addition, by forming the gap in the aperture mask web 10 to be sufficiently small, other features such as the distance between the source electrode 185 and the drain electrode 186 are less than about 1000 microns, about 500 microns. Less than, less than 250 microns, or even less than 200 microns. In that case, each of the two electrodes 185, 186 is separated by a deposition aperture separated by a sufficiently small gap, such as a gap of less than about 1000 microns, less than about 500 microns, less than 250 microns, or even less than 200 microns. In a defined state, a single mask pattern may be used to deposit the second conductive layer 184. This method can reduce the size of the thin film transistor 180 by enabling a smaller, higher density circuit configuration while improving the performance of the thin film transistor 180. In addition, a circuit comprising two or more transistors, as shown in FIG. 20, is an aperture mask having two deposition openings in a pattern separated by a large distance as shown in FIGS. Can be formed by web.

  FIG. 21 shows another embodiment of the thin film transistor 190. In particular, the thin film transistor 190 includes a first vapor-deposited conductive layer 192 formed on the vapor deposition substrate 191. The deposited dielectric layer 193 is formed on the first conductive layer 192. A vapor deposition active layer 194 such as a vapor deposition semiconductor layer or a vapor deposition organic semiconductor layer is formed on the vapor deposition dielectric layer 193. A second deposited conductive layer 195 defining a source electrode 196 and a drain electrode 197 is formed on the deposited active layer 194.

  Again, by forming the deposition opening 14 to be sufficiently small in the opening mask web 10, one or more forms of the thin film transistor 190 have a width similar to that discussed herein. Can do. Also, by forming the gap between the openings in the aperture mask web 10 to be sufficiently small, the distance between the source electrode 196 and the drain electrode 197 has a gap size similar to that discussed herein. Can be. In that case, a single mask pattern may be used to deposit the second conductive layer 195 with each of the two electrodes 196, 187 defined by a deposition opening separated by a sufficiently small gap. In this method, the size of the thin film transistor 190 can be reduced, and the performance of the thin film transistor 190 can be improved.

  A thin film transistor mounting an organic semiconductor generally takes the shape of FIG. 20 because the organic semiconductor cannot be etched or lithographically patterned without compromising or reducing the performance of the organic semiconductor material. . For example, morphological changes in the organic semiconductor layer can occur upon exposure to process solvents. For this reason, assembly techniques can be used in which an organic semiconductor is deposited as the top layer. The configuration of FIG. 21 is advantageous because the top contact to the electrode provides a low resistance interface.

  By forming at least the top two layers of the thin film transistor using an aperture mask deposition technique, the present invention facilitates the configuration of FIG. 21 even if the active layer 194 is an organic semiconductor layer. The configuration of FIG. 21 has an organic semiconductor layer on the relatively flat surface of the dielectric layer 193 as opposed to being deposited on the discontinuous second conductive layer 184 as shown in FIG. By allowing vapor deposition, the organic semiconductor layer can be grown. For example, if the organic semiconductor material is deposited on a non-smooth surface, growth is hindered. Therefore, the configuration of FIG. 21 may be preferred to avoid hindering organic semiconductor growth. In some embodiments, all layers may be deposited as described above. The configuration of FIG. 21 is also advantageous because the deposition of appropriate source and drain electrodes on the organic semiconductor provides a low resistance interface. In addition, a circuit having two or more transistors separated by a large distance can also be made using, for example, an aperture mask web as shown in FIGS.

  The use of the rapid and disposable aperture mask of the present invention can facilitate the recovery of the vapor deposition material accumulated in the aperture mask. Such materials can include metals, including noble metals such as gold or silver, or any other material deposited in the manufacture of electronic circuit elements. The recovery of the vapor deposition material may be accomplished with other alterations of the aperture mask that may make it impossible to destroy the aperture mask or reuse the aperture mask. The recovery of the vapor deposition material may be partly or entirely by burning the aperture mask, partially or totally melting the aperture mask, for example by slicing, cutting, chopping, grinding, or pulverizing. It may be achieved by a process comprising dividing the entire opening mask into pieces, or dissolving the opening mask partially or entirely in a solvent. The rapid or disposable aperture mask according to the present invention allows a process in which cleaning of the aperture mask is avoided by frequent replacement of the aperture mask.

  In a further embodiment, an aperture mask according to the present disclosure is a disclosure that is incorporated herein by reference, as taught in US patent application Ser. No. 11 / 179,418, and a roll-to-roll process and It can be used for the therefor device, or for a continuous process and the therefor device.

  A number of embodiments of the invention have been described. For example, several different structural components and different aperture mask deposition techniques have been described to implement an in-line deposition system. Vapor deposition techniques can be used to create various circuits using only vapor deposition, avoiding any chemical etching process or photolithography, and are particularly useful when accompanied by organic semiconductors. In addition, the system can be automated to reduce human error and increase throughput. However, it should be understood that various modifications can be made without departing from the spirit and scope of the invention. For example, while some aspects of the invention have been described for use in thermal evaporation processes, the techniques and structural devices described herein include sputtering, thermal evaporation, electron beam evaporation, and It can also be used with any deposition process, including pulsed laser deposition. Thus, these other embodiments are within the scope of the following claims.

FIG. 3 is a perspective view of an aperture mask in the form of an aperture mask web wound on a roll. The top view of the opening mask by embodiment of this invention. FIG. 2b is an enlarged view of a portion of the aperture mask of FIG. 2a. FIG. 2b is an enlarged view of a single opening of the opening mask of FIG. 2a. 2c is a cross section of the opening of FIG. 2c. The top view of the opening mask by embodiment of this invention. The top view of the opening mask by embodiment of this invention. The top view of the opening mask by embodiment of this invention. 1 is a side view of a flame perforation device useful in the method of the present invention. FIG. FIG. 7 is a front view of the opening of FIG. 6 with two idler rolls and a motor removed for clarity, and a backing roll shown in a very thin line. FIG. 7 is an enlarged view of a burner ribbon of the apparatus of FIG. 6. FIG. 7 is a side view of the opening of FIG. 6 including a film moving along a film path in the apparatus. FIG. 3 is an enlarged cross-sectional view of a portion of a burner, film, and backing roll with the burner flame positioned away from the film such that the flame is a non-hit flame. Figure similar to Figure 9 with a burner flame hitting the film. A simplified diagram of in-line aperture mask deposition technology. A simplified diagram of in-line aperture mask deposition technology. 1 is a block diagram of a deposition station according to the present invention. 1 is a block diagram of a deposition station according to the present invention. 1 is a perspective view of one exemplary stretching device according to an embodiment of the present invention. FIG. The enlarged view of an extending | stretching mechanism. The top view of the typical extending | stretching apparatus by embodiment of this invention. The top view of the typical extending | stretching apparatus by embodiment of this invention. The top view of the typical extending | stretching apparatus by embodiment of this invention. 1 is a block diagram of an exemplary in-line deposition system according to an embodiment of the present invention. 1 is a cross-sectional view of an exemplary thin film transistor that can be made in accordance with the present invention. 1 is a cross-sectional view of an exemplary thin film transistor that can be made in accordance with the present invention.

Claims (40)

An aperture mask,
An elongated web of flexible film and at least one vapor deposition mask pattern formed on the film;
The deposition mask pattern defines a deposition opening extending through the film that defines at least a portion of one or more electronic circuit elements, the deposition opening is bounded by a frame, and the frame is a standard of the mask An aperture mask that is part of the mask having a thickness that exceeds the thickness.   The opening mask according to claim 1, wherein the opening mask includes a plurality of independent vapor deposition mask patterns.   The aperture mask of claim 2, wherein each deposition mask pattern is substantially the same.   The aperture mask according to claim 1, wherein the web of film is sufficiently flexible and the web can be wound to form a roll.   The aperture mask according to claim 1, wherein the web of film is stretchable and the web can extend at least in a downward direction of the web.   The aperture mask according to claim 1, wherein the web made of a film is stretchable at least in a transverse direction of the web.   The aperture mask of claim 1, wherein the web of film comprises a polymer film.   The aperture mask of claim 1, wherein the web of film comprises a polyimide film.   The aperture mask of claim 1, wherein the web of film comprises a polyester film.   The aperture mask of claim 1, wherein the at least one deposition aperture has a minimum diameter of less than about 1000 microns.   The aperture mask of claim 1, wherein the at least one deposition aperture has a minimum diameter of less than about 250 microns. A method of making an aperture mask,
The opening mask is
An elongated web of flexible film;
A vapor deposition mask pattern formed on the film,
The deposition mask pattern defines a deposition opening extending through the film defining at least a portion of one or more electronic circuit elements;
The method
Providing a support surface including a plurality of lower portions; and
Providing a burner for supporting a flame, the flame comprising a flame tip on the opposite side of the burner;
Contacting at least a portion of an elongated web of flexible film against a support surface;
Heating the film with a flame from a burner to create an opening in the film in an area covering a plurality of lower portions. Wherein the support surface is cooled to a temperature below 29 ° C. (120 ° F.),
Heating the first side of the film to contact a surface above 74 ° C. (165 ° F.);
Prior to heating the film with a flame from a burner, removing the heated surface from the first side of the film and creating an opening in the film in an area covering the plurality of lower portions;
The method of claim 12, further comprising:   13. The method of claim 12, further comprising positioning the burner such that a distance between the non-flaming flame tip and the burner is at least 1/3 greater than a distance between the film and the burner. The method described in 1.   The positioning step includes positioning the burner such that a distance between the non-flaming flame tip of the flame and the burner is at least 2 millimeters greater than a distance between the film and the burner. The method according to claim 14.   Further comprising the step of positioning the burner such that the angle measured between the burner and the nip roll is less than 45 °, the vertex of the angle being positioned on the axis of the backing roll. The method of claim 12 comprising.   The method of claim 12, wherein the aperture mask comprises a plurality of independent deposition mask patterns.   The method of claim 12, wherein the web of film is sufficiently plastic that the web can be wound to form a roll.   The method of claim 12, wherein the web of film comprises a polymer film.   The method of claim 12, wherein the web of film comprises a polyimide film.   The method of claim 12, wherein the web of film comprises a polyester film. A method for producing an electronic circuit element,
Preparing a support surface including a plurality of lower portions;
A step of providing a burner for supporting a flame, the step of including the flame on the opposite side of the burner;
Contacting at least a portion of an elongated web of flexible film with the support surface;
Heating the film with a flame from a burner to create an opening in the film in the area covering the plurality of inferior portions, and thereby creating an opening mask;
Providing a first web of film;
Positioning the aperture mask and the first web of film in close proximity to each other;
Depositing a deposition material on the first web of film through the apertures in the aperture mask to create at least a portion of one or more electronic circuit elements.   23. The method of claim 22, further comprising the step of recovering vapor deposition material accumulated in the aperture mask by a method that prevents reuse of the aperture mask.   Burning the aperture mask in part or in whole; melting the aperture mask in part or in whole; dividing the aperture mask into pieces in part or in whole; and 23. The method according to claim 22, further comprising the step of recovering the deposition material accumulated in the opening mask by a method comprising: dissolving the opening mask in whole or in whole, and a step selected from the group consisting of: the method of. Wherein the support surface is cooled to a temperature below 29 ° C. (120 ° F.),
Heating the first surface of the film to contact a surface that is above 74 ° C. (165 ° F.);
Prior to heating the film with a flame from a burner, the heated surface is removed from the first surface of the film and an opening is made in the film in the area covering the plurality of lower portions. The method of claim 22, further comprising:   23. The method of claim 22, further comprising positioning the burner such that a distance between the non-flaming flame tip and the burner is at least 1/3 greater than a distance between the film and the burner. The method described.   The positioning step includes positioning the burner such that the distance between the unfired flame tip of the flame and the burner is at least 2 millimeters greater than the distance between the film and the burner. Item 27. The method according to Item 26.   Positioning the burner such that the angle measured between the burner and the nip roll is less than 45 °, the vertex of the angle being positioned on the axis of the backing roll; 24. The method of claim 22, further comprising:   The method of claim 22, wherein the aperture mask includes a plurality of independent deposition mask patterns.   23. The method of claim 22, wherein the web of film is sufficiently flexible that the web can be wound to form a roll.   23. The method of claim 22, wherein the web of film comprises a polymer film.   23. The method of claim 22, wherein the web of film comprises a polyimide film.   24. The method of claim 22, wherein the web of film comprises a polyester film. An apparatus for continuously depositing a pattern of a substance on a substrate,
A substrate delivery roller for delivering the substrate, and a first substrate receiving roller for receiving the substrate,
The base material extends from the base material delivery roller to the base material reception roller, and continuously passes from the base material delivery roller to the base material reception roller,
further,
A first mask comprising openings defining a first pattern,
An elongated web of flexible film and at least one vapor deposition mask pattern formed on the film;
The deposition mask pattern defines a deposition opening extending through a film defining at least a portion of one or more electronic circuit elements;
A first mask, wherein the vapor deposition opening is bounded by a frame, the frame being part of the mask having a thickness greater than a standard thickness of the mask;
A first mask delivery roller for delivering the first mask;
A first mask receiving roller for receiving the first mask,
The mask extends from the mask delivery roller to the mask receiving roller, and the first mask passes continuously from the first mask delivery roller to the first mask receiving roller;
further,
Including the first drum,
The substrate and the first polymer mask are on a portion of the circumference of the first drum between supply from the substrate and mask delivery roller and receipt on the substrate and mask receiving roller. The first drum rotates continuously,
further,
A first vapor deposition source positioned to continuously direct a first vapor deposition material toward the portion of the first mask on the portion around the first drum, and at least the first vapor deposition material; A portion of which passes through the opening of the first mask to continuously deposit the first pattern of the first material on the substrate. When the base material comes into contact with a part of the periphery of the first drum, the first base material maintains a predetermined extension of the base material in the direction of feeding from the base material feed roller to the first drum. A substrate elongation control system;
When the first mask comes into contact with a part of the circumference of the first drum, the predetermined extension of the first mask is maintained in the direction of feeding from the first mask feed roller to the first drum. A first mask expansion control system to
35. The apparatus of claim 34, further comprising: A first substrate lateral position control system including a web guide that adjusts the lateral position of the substrate to a predetermined lateral point on the first drum;
A first mask lateral position control system including a web guide for adjusting a lateral position of the first mask to a predetermined lateral point on the first drum;
35. The apparatus of claim 34, further comprising:   The substrate is in direct contact with the first drum on the portion around the first drum, and the first mask is in direct contact with the substrate on the portion around the first drum; 35. The apparatus of claim 34, wherein a first vapor deposition source is positioned at a point away from the first drum, and the first mask is disposed between the substrate and the first vapor deposition source.   The first drum includes an opening spaced apart near the periphery, and the first mask is in direct contact with the first drum and into the opening on the portion of the periphery of the first drum. The substrate is in direct contact with the first mask on the peripheral portion of the first drum, the first vapor deposition source is positioned within the first drum, and the first mask is 35. The apparatus of claim 34, disposed between the substrate and the first deposition source. A second mask including openings defining a second pattern,
An elongated web of flexible film;
And at least one second vapor deposition mask pattern formed on the film,
The second deposition mask pattern defines a second deposition opening extending through the film defining at least a second portion of one or more electronic circuit elements, the second deposition opening being bounded by a frame, Is a portion of the mask having a thickness that exceeds the standard thickness of the mask;
further,
A second mask delivery roller for delivering the second mask;
A second mask receiving roller for receiving the second mask,
A second polymer mask extends from the mask delivery roller to the mask receiving roller, and the second mask passes continuously from the second mask delivery roller to the second mask receiving roller;
further,
A second substrate receiving roller for receiving the substrate;
The substrate passes continuously from the first substrate receiving roller to the second substrate receiving roller,
further,
Including the second drum,
The substrate and the second mask come into contact with the second drum on a part of the periphery of the second drum, and the second drum is configured to contact the substrate receiving roller and the second substrate receiving Receiving the substrate between the rollers, the second drum rotating continuously;
further,
A second vapor deposition source positioned to continuously direct a second vapor deposition material toward a portion of a second mask on the portion of the circumference of the second drum;
35. The apparatus of claim 34, wherein at least a portion of the second deposition material passes through the opening of the second mask to deposit the second pattern of the second material on the substrate. A method of continuously depositing a material,
A step of continuously feeding the base material onto the base material receiving roller and simultaneously feeding the base material from the base material feeding roller, wherein the base material is interposed between the base material feeding roller and the base material receiving roller. Passing over a portion of the circumference of the first drum when
Continuously feeding and receiving the substrate while continuously receiving the first mask on the first mask receiving roller and simultaneously feeding the first mask from the first mask feeding roller, A first mask passes over a portion of the periphery of the first drum when between the first mask delivery roller and the first mask receiving roller, the first mask being an elongated web of flexible film; At least one deposition mask pattern formed in the film, wherein the deposition mask pattern defines a deposition opening extending through the film defining at least a portion of one or more electronic circuit elements, Bounded by a frame, the frame being part of a mask having a thickness that exceeds a standard thickness of the mask;
A portion of the first mask that is on the portion of the periphery of the first drum from the first deposition source while simultaneously delivering and receiving the substrate and the first mask. A first pattern of a first material is deposited on the substrate;
A method of continuously depositing a material, comprising:

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