CN104737279A - Thin-film formation device and thin-film formation method - Google Patents
Thin-film formation device and thin-film formation method Download PDFInfo
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- CN104737279A CN104737279A CN201380053966.5A CN201380053966A CN104737279A CN 104737279 A CN104737279 A CN 104737279A CN 201380053966 A CN201380053966 A CN 201380053966A CN 104737279 A CN104737279 A CN 104737279A
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- 239000010409 thin film Substances 0.000 title claims abstract description 58
- 238000000034 method Methods 0.000 title claims description 46
- 230000015572 biosynthetic process Effects 0.000 title abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 344
- 239000002904 solvent Substances 0.000 claims abstract description 123
- 239000000463 material Substances 0.000 claims abstract description 86
- 239000010408 film Substances 0.000 claims description 140
- 239000012298 atmosphere Substances 0.000 claims description 41
- 238000010438 heat treatment Methods 0.000 claims description 28
- 238000002425 crystallisation Methods 0.000 claims description 14
- 230000008025 crystallization Effects 0.000 claims description 14
- 238000005286 illumination Methods 0.000 claims description 13
- 230000005484 gravity Effects 0.000 claims description 12
- 230000000694 effects Effects 0.000 claims description 11
- 238000001035 drying Methods 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 10
- 238000012360 testing method Methods 0.000 claims description 10
- 230000008859 change Effects 0.000 claims description 9
- 239000003795 chemical substances by application Substances 0.000 claims description 5
- 239000006087 Silane Coupling Agent Substances 0.000 claims description 2
- 238000004381 surface treatment Methods 0.000 claims description 2
- 238000010977 unit operation Methods 0.000 claims 2
- 238000007591 painting process Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 description 60
- 239000010410 layer Substances 0.000 description 58
- 230000009471 action Effects 0.000 description 28
- 230000005855 radiation Effects 0.000 description 24
- 239000007789 gas Substances 0.000 description 15
- 239000013078 crystal Substances 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 11
- 230000007246 mechanism Effects 0.000 description 11
- 239000011248 coating agent Substances 0.000 description 10
- 238000000576 coating method Methods 0.000 description 10
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 9
- 239000003960 organic solvent Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 238000001514 detection method Methods 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 238000011144 upstream manufacturing Methods 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 239000013545 self-assembled monolayer Substances 0.000 description 3
- 238000000935 solvent evaporation Methods 0.000 description 3
- 229920000219 Ethylene vinyl alcohol Polymers 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000004320 controlled atmosphere Methods 0.000 description 2
- 230000006837 decompression Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 239000011256 inorganic filler Substances 0.000 description 2
- 229910003475 inorganic filler Inorganic materials 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 239000002094 self assembled monolayer Substances 0.000 description 2
- -1 silylethynyl Chemical group 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- 239000005041 Mylar™ Substances 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 230000018199 S phase Effects 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- 239000005030 aluminium foil Substances 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920005990 polystyrene resin Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133305—Flexible substrates, e.g. plastics, organic film
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/03—Manufacturing methods
- H01L2224/033—Manufacturing methods by local deposition of the material of the bonding area
- H01L2224/0331—Manufacturing methods by local deposition of the material of the bonding area in liquid form
- H01L2224/03318—Manufacturing methods by local deposition of the material of the bonding area in liquid form by dispensing droplets
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mathematical Physics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
This thin-film formation device, which forms a thin film on the surface of a substrate, is provided with the following: a supply unit that supplies, to the surface of the substrate, droplets of a solvent that contains a material that forms the thin film; a shape-changing unit that changes the shapes of the droplets on the surface of the substrate so as to extend from one direction to another direction; and a removal unit that removes the solvent from the droplets extending from the aforementioned one direction to the aforementioned other direction.
Description
Technical field
The present invention relates to film forming device and film forming method.
The application requires priority based on No. 2012-231877, Japan's Patent of No. 2012-231876, Japan's Patent of applying on October 19th, 2012 and application on October 19th, 2012, and its content is incorporated herein.
Background technology
As the display element forming the display unit such as display equipment, there will be a known the electrophoresis element etc. used in such as liquid crystal display cells, organic electroluminescent (organic EL) element, Electronic Paper.A method of the electronic devices such as the display pannel of these elements is had as fabrication and installation, there will be a known volume to volume (the roll to roll) mode that is such as called as (following, referred to as " spool mode ") method (for example, referring to patent documentation 1).
Spool mode is following method: sent by the substrate of a slice sheet be wound on the roller of substrate supply side, and while batch with the roller of substrate recovery side the substrate sent, carrying substrate on one side, pass out to from substrate be taken up till between, substrate is formed pattern successively that be used for the display circuit of electronic device (display pixel circuits, drive circuit, wiring etc.) and drive circuit etc.In recent years, the processing unit of the films such as the semiconductor layer that forms such as transistor formed is proposed.
At first technical literature
Patent documentation
Patent documentation 1: No. 2008/129819th, International Publication
Summary of the invention
In spool mode as described above, urgent expectation can manufacture the technology of the high film of electrical characteristic.
The object of the solution of the present invention is, provides the film forming device and film forming method that can manufacture the high film of electrical characteristic.
According to first scheme of the present invention, provide a kind of surface at substrate film forming film forming device, have: supply unit, the drop of the solvent of the material containing film is supplied to the surface of substrate by it; Shape variant part, it makes the shape of the drop on the surface of substrate be out of shape in the mode extended towards another direction from a direction; And removing unit, it is to the drop removing solvent extended towards another direction from a direction.
According to alternative plan of the present invention, provide a kind of surface at substrate film forming film forming method, have: supply step, the drop of the solvent of the material containing film is supplied to the surface of substrate by it; Distortion operation, it makes the shape of the drop on the surface of substrate be out of shape in the mode extended towards another direction from a direction; Removal step, it is to the drop removing solvent extended towards another direction from a direction.
According to third program of the present invention, a kind of film forming method is provided, on a surface of a substrate, form semiconductive thin film being set as comprising in the drain electrode of thin-film transistor and the film forming region of source electrode, have: supply step, the drop of the solvent of the material containing above-mentioned semiconductive thin film is supplied to a part for above-mentioned film forming region by it; Distortion operation, it makes the above-mentioned drop of the part being supplied to above-mentioned film forming region be out of shape in the mode extended along the direction of the crystallization between above-mentioned drain electrode and above-mentioned source electrode; And removal step, it removes above-mentioned solvent from the above-mentioned drop of above-mentioned distortion.
According to fourth program of the present invention, provide a kind of surface at substrate film forming film forming device, have: illumination part, it is on substrate, to being formed with the irradiation accepting light and the area illumination light constructing the material changed; Supply unit, the drop of the solvent of the material containing film is supplied to region by it; Removing unit, it is from the drop removing solvent being supplied to region.
According to the 5th scheme of the present invention, provide a kind of surface at substrate film forming film forming method, have: light irradiation process, it is on substrate, to being formed with the irradiation accepting light and the area illumination light constructing the material changed; Supply step, the drop of the solvent of the material containing film is supplied to region by it; And removal step, it is from the drop removing solvent being supplied to region.
According to the 6th scheme of the present invention, a kind of film forming method is provided, it forms semiconductive thin film being set in the mode comprising the drain electrode and source electrode that are formed thin-film transistor in the film forming region on substrate, comprise: the first operation, the surface treatment of above-mentioned film forming region is the state with anisotropic molecular configuration by it; Second operation, the drop of the solvent of the material containing above-mentioned semiconductive thin film is supplied to above-mentioned film forming region by it; 3rd operation, it removes above-mentioned solvent from the above-mentioned drop being supplied to above-mentioned film forming region.
Invention effect
According to the solution of the present invention, the film that electrical characteristic is high can be manufactured.
According to other schemes of the present invention, high-precision pattern can be formed.
Accompanying drawing explanation
Fig. 1 is the figure of the structure of the substrate board treatment representing the first execution mode of the present invention.
Fig. 2 is the figure of the structure of the processing unit representing present embodiment.
Fig. 3 is the figure of a part of structure of the processed surface of the substrate representing present embodiment.
Fig. 4 is the figure of a part of structure of the processing unit representing present embodiment.
Fig. 5 A is the figure of the inclination represented about drop.
Fig. 5 B is the figure of the inclination represented about drop.
Fig. 6 is the figure of the action of the processing unit representing present embodiment.
Fig. 7 is the figure of the action of the processing unit representing present embodiment.
Fig. 8 is the figure of the action of the processing unit representing present embodiment.
Fig. 9 A represents action based on the processing unit of present embodiment and the figure of the state of the processed surface of the substrate formed.
Fig. 9 B represents action based on the processing unit of present embodiment and the figure of the state of the processed surface of the substrate formed.
Fig. 9 C represents action based on the processing unit of present embodiment and the figure of the state of the processed surface of the substrate formed.
Fig. 9 D represents action based on the processing unit of present embodiment and the figure of the state of the processed surface of the substrate formed.
Figure 10 is the figure of the structure of the processing unit representing the second execution mode of the present invention.
Figure 11 is the figure of the action of the processing unit representing present embodiment.
Figure 12 A represents action based on the processing unit of present embodiment and the figure of the state of the processed surface of the substrate formed.
Figure 12 B represents action based on the processing unit of present embodiment and the figure of the state of the processed surface of the substrate formed.
Figure 12 C represents action based on the processing unit of present embodiment and the figure of the state of the processed surface of the substrate formed.
Figure 12 D represents action based on the processing unit of present embodiment and the figure of the state of the processed surface of the substrate formed.
Figure 13 is the figure of the structure of the processing unit representing the 3rd execution mode of the present invention.
Figure 14 is the figure of the action of the processing unit representing present embodiment.
Figure 15 is the figure of the action of the processing unit representing present embodiment.
Figure 16 is the figure of the action of the processing unit representing present embodiment.
Figure 17 is the figure of the structure of the processing unit representing the 4th execution mode of the present invention.
Figure 18 is the figure of the structure of the processing unit representing the 5th execution mode of the present invention.
Figure 19 is the figure of a part of structure of the processed surface of the substrate representing present embodiment.
Figure 20 is the figure of the action of the processing unit representing present embodiment.
Figure 21 is the figure of the action of the processing unit representing present embodiment.
Figure 22 is the figure of the molecular configuration of the material layer representing present embodiment.
Figure 23 is the figure of the molecular configuration of the material layer representing present embodiment.
Figure 24 is the figure of the change of the thickness of the material layer representing present embodiment.
Figure 25 is the figure of the action of the processing unit representing present embodiment.
Figure 26 is the figure representing the state being configured in the drop on lyophily layer by the processing unit of present embodiment.
Figure 27 is the figure representing the state being configured in the drop on lyophily layer by the processing unit of present embodiment.
Figure 28 is the figure representing the state being configured in the drop on lyophily layer by the processing unit of present embodiment.
Figure 29 is the figure of the action of the processing unit representing present embodiment.
Figure 30 is the figure representing the state being configured in the drop on lyophily layer by the processing unit of present embodiment.
Figure 31 is the figure representing the state being configured in the drop on lyophily layer by the processing unit of present embodiment.
Embodiment
Hereinafter, with reference to the accompanying drawings of present embodiment.
[the first execution mode]
Fig. 1 is the schematic diagram of the structure of the substrate board treatment 100 representing the first execution mode.
As shown in Figure 1, substrate board treatment 100 has: the substrate supply unit 2 of substrate (such as, the banded membrane element) S that supply is banded, to the processing substrate portion 3 of surface (processed surface) the Sa process of substrate S, reclaim the substrate recoverer 4 of substrate S, control the control part CONT of these each several parts.
Processing substrate portion 3 has substrate board treatment 100, and substrate board treatment 100 is for performing various process to being reclaimed substrate S by substrate recoverer 4 to the surface of substrate S sending substrate S from substrate supply unit 2.This substrate board treatment 100 can be used in the situation forming the such as display floater such as organic EL element, liquid crystal display cells (electronic device) on substrate S.
In addition, in the present embodiment, set XYZ coordinate system as shown in Figure 1, suitably use this XYZ coordinate system to be described below.XYZ coordinate system such as along horizontal plane setting X-axis and Y-axis, sets Z axis upward along vertical.In addition, substrate board treatment 100 entirety along X-axis, from X-axis minus side (-X-axis side) to the positive side of X-axis (+X-axis side) carrying substrate S.Now, the Width (short side direction) of banded substrate S is set as Y direction.
The paper tinsel (foil) of such as resin molding or stainless steel etc. can be used as the substrate S of handling object in substrate board treatment 100.Such as, resin molding can use the material such as polyvinyl resin, acrylic resin, mylar, ethylene-vinyl alcohol copolymer resin (ethylene vinylalcoholcopolymer), Corvic, celluosic resin, polyamide, polyimide resin, polycarbonate resin, polystyrene resin, vinyl acetate resin.
The substrate that the preferred thermal coefficient of expansion of substrate S is little, even if with the heat making to bear such as about 200 DEG C, the size of substrate is also constant.Such as inorganic filler can be blended in resin molding and reduce thermal coefficient of expansion.As the example of inorganic filler, titanium oxide, zinc oxide, aluminium oxide, silica etc. can be listed.In addition, substrate S also can be the monomer of the very thin glass of the thickness about 100 μm using the method for floating etc. to manufacture, or the duplexer of fit on this very thin glass above-mentioned resin molding or aluminium foil.
The size of the Width (short side direction) of substrate S is formed as such as about 1m ~ 2m, and the size of length direction (long side direction) is formed as such as more than 10m.Certainly, this size is only an example, is not limited to this.Such as, the size in the Y-direction of substrate S can be below 1m or below 50cm, also can at more than 2m.In addition, the size in the X-direction of substrate S also can at below 10m.
Substrate S has the thickness of such as below 1mm and has flexibility.So-called flexible at this, even if refer to that the power substrate applying deadweight degree to substrate also can not rupture or disrumpent feelings, can make the character that aforesaid substrate bends.In addition, the character bent because of the power of degree of conducting oneself with dignity is also contained in flexibility.In addition, above-mentioned flexibility changes according to the material, size, the environment such as thickness or temperature etc. of aforesaid substrate.In addition, as substrate S, the substrate of a slice band shape can be used, also can use and connect multiple unit substrate and be formed as banded structure.
The substrate S being rolled into reel such as sends towards processing substrate portion 3 by substrate supply unit 2, and is supplied in processing substrate portion 3 by substrate S.In this case, in substrate supply unit 2, the axle portion being provided with winding substrate S and the rotating driving device that this axle portion is rotated.And can be configured to: substrate supply unit 2 have such as by be rolled into reel state under substrate S cover cover portion.In addition, substrate supply unit 2 is not limited to the mechanism sending the substrate S being rolled into reel, as long as comprise the mechanism's (such as clipping driven roller etc.) sent successively along its length by the substrate S of band shape.
Substrate S after the substrate board treatment 100 had by processing substrate portion 3 is such as coiled into reel and reclaims by substrate recoverer 4.In substrate recoverer 4, identically with substrate supply unit 2, the axle portion for the substrate S that reels and the rotary driving source that this axle portion is rotated, the cover portion etc. covering the substrate S after reclaiming is provided with.In addition, under substrate S being cut into situation of plate (panel) shape etc. in processing substrate portion 3, also can be configured to: such as with state recovery by substrate S overlap etc., with the state different from the state being rolled into reel to reclaim substrate S.
The substrate S supplied from substrate supply unit 2 carries to substrate recoverer 4 by processing substrate portion 3, and the processed surface Sa process to substrate S in the process of carrying.Processing substrate portion 3 has processing unit 10 and Handling device 20, and the processed surface Sa of processing unit 10 couples of substrate S carries out processing process, and Handling device 20 is included in the transport roller R etc. of conveying substrate S under the condition corresponding with the form of processing process.Processing unit 10 also can be called processing device in this manual.
Processing unit 10 has the various devices for forming such as organic EL element to the processed surface Sa of substrate S.As such device, can list such as forming next door forming apparatus, the electrode forming apparatus for the formation of electrode, the luminescent layer forming apparatus etc. for the formation of luminescent layer of impression (imprint) mode in next door etc. on processed surface Sa.More particularly, apparatus for coating liquid droplet (such as inkjet type apparatus for coating etc.), film formation device (such as plating apparatus, evaporation coating device, sputter equipment etc.), exposure device, developing apparatus, surfaction device, cleaning device etc. can be listed.These each devices are suitably arranged along the transport path of substrate S, can produce the panel etc. of flexible display (flexible display) by so-called volume to volume mode.In the present embodiment, as processing unit 10, enumerate such as film forming device and be described as an example.
Handling device 20 has the multiple guide reel R (illustrate only two rollers in FIG) substrate S being guided to substrate recoverer 3 in processing substrate portion 3 from substrate supply unit 2.Guide reel R configures along the transport path of substrate S.At least one guide reel R among multiple guide reel R is provided with rotary drive mechanism (not shown).In the present embodiment, the length of the transport path in Handling device 20 is such as total length about hundreds of meters.In this manual, also guide reel R can be called transport roller.
Fig. 2 is the figure of the structure representing processing unit 10.Fig. 3 is the figure of a part of structure of the processed surface Sa representing substrate S.
As shown in Figure 2, processing unit 10 has drop supply unit 11, shape variant part 12 and solvent removing unit 13.
Drop Q is supplied to the processed surface Sa of substrate S by drop supply unit 11.This drop Q comprises the thin-film material and its solvent that are formed at substrate S.Drop supply unit 11 has the drop discharge portion 11a discharged by drop Q.Below, the situation such as forming organic semiconductor thin-film as film is described.In this case, as the material that drop Q comprises, the organic semiconducting materials such as the pentacene of such as silylethynyl replacement can be listed.In addition, as the solvent that drop Q comprises, the organic solvents such as such as toluene (toluene) can be listed.
As shown in Figure 3, drop discharge portion 11a can discharge the drop Q of ormal weight to the multiple film forming region Pg on the processed surface Sa of substrate S.As drop discharge portion 11a, can list and such as discharge the structure of drop Q by ink-jetting style or discharged the structure etc. of drop Q by electronic spraying mode.
As shown in Figure 3, the processed surface Sa of substrate S is formed with the source electrode Es formed as the thin-film transistor of transistor unit and drain electrode Ed.In the present embodiment, in source electrode Es and drain electrode Ed, source electrode Es is configured at the upstream side (-X side) in the carrying direction (X-direction) of substrate S, and drain electrode Ed is configured at the downstream (+X side) in the carrying direction of substrate S.
Film forming region Pg is set as rectangular-shaped in the mode of a part for the part and drain electrode Ed that comprise source electrode Es respectively.In this film forming region Pg, organic semiconductor thin-film is configured to overlapping with a part of source electrode Es and a part of drain electrode Ed respectively.Film forming region Pg also can be shape (such as circle, ellipse, polygon or their combination) in addition to a rectangle.
Shape variant part 12 makes the shape of the drop Q of the processed surface Sa being configured at substrate S be out of shape.Shape variant part 12 has the first roller 12a and the second roller 12b.The processed surface Sa of the first roller 12a and substrate S rotates contiguously.First roller 12a can be both the structure rotated by the actuating force of not shown drive division, also can be the structure driven along with the actuating force of other rollers.Fig. 4 is the stereogram of the structure representing the first roller 12a.As shown in Figure 4, the first roller 12a has contact site 12c, contact site 12d and axle portion 12e.In the present embodiment, the first roller 12a and the second roller 12b also can be called substrate S to tilt with the rake making drop Q flow on substrate S due to gravity.
Contact site 12c and contact site 12d is formed by the disk-like member with outer peripheral face (periphery) and two sides.Contact site 12c and contact site 12d is rotated around Y-axis by the state contacted with substrate S with outer peripheral face (periphery) and gives carrying capacity to substrate S along direction of rotation.Contact site 12c contacts relative to the end (such as+Y side end) of the side of the short side direction of substrate S.Contact site 12d contacts with the end (such as-Y side end) of the opposite side of the short side direction of substrate S.
Contact site 12c and contact site 12d configures in the mode that the side of contact site 12c is relative in the Y direction with the side of contact site 12d.In addition, position position consistency in X-direction and Z-direction that the position that contact site 12c contacts with processed surface Sa contacts with processed surface Sa with contact site 12d.It is identical that contact site 12c and contact site 12d is formed as diameter.In this condition, contact site 12c and contact site 12d is linked up by axle portion 12e.
Axle portion 12e is formed as cylindric or cylindric.It is parallel with Y-axis that axle portion 12e is configured to axis direction.+ Y the side end of axle portion 12e is connected with the central part of the side of contact site 12c.-Y the side end of axle portion 12e is connected with the central part of the side of contact site 12d.The diameter of axle portion 12e is formed little than the diameter of contact site 12c and contact site 12d.
When contact site 12c and contact site 12d contacts with the processed surface Sa of substrate S, between the processed surface Sa and axle portion 12e of substrate S, form gap.This gap is formed as can for by drop discharge portion 11a discharge, the drop Q be configured on the processed surface Sa of substrate S does not pass through contiguously with axle portion 12e.
Thus, in the present embodiment, the diameter of contact site 12c, the diameter of contact site 12d and the diameter of axle portion 12e is set respectively to make the diameter of contact site 12c and contact site 12d higher than the height (the processed surface Sa of substrate S being set to the size of the drop Q of the Z-direction of benchmark) of drop Q with the difference of the diameter of axle portion 12e.
In addition, as shown in Figure 2, the second roller 12b is configured at the downstream (+X side) in the direction (carrying direction :+X-direction) that substrate S is handled upside down relative to the first roller 12a, rotates contiguously with the back side Sb of substrate S.Second roller 12b is identical with the first roller 12a, and can be both the structure rotated by the actuating force of not shown drive division, also can be the structure driven along with the actuating force of other rollers.
In addition, also can form the first roller 12a, the second roller 12b by the contactless guide reel producing gas from roller, between the processed surface Sa and the first roller 12a and the second roller 12b of substrate S, form air layer, with discontiguous mode carrying substrate S.
This second roller 12b is configured at+Z side relative to the first roller 12a.The downstream of the part of the substrate S between the first roller 12a and the second roller 12b is with the angle θ of regulation
1roll tiltedly to+Z.Below, the part of the substrate S between the first roller 12a and the second roller 12b is expressed as sloping portion Sl.Sloping portion Sl is with angle θ
1be handled upside down under the state tilted.
Solvent removing unit 13 has ultrasonic irradiation portion 13a, heating part 13b and atmosphere adjustment part 13c.Solvent removing unit 13 uses at least one the drop Q be out of shape from shape among ultrasonic irradiation portion 13a and heating part 13b to remove solvent.Solvent removing unit 13 also can have the drying section making drop Q drying.
Ultrasonic irradiation portion 13a is configured at the processed surface Sa side (+Z side) of substrate S.Ultrasonic irradiation portion 13a irradiates ultrasonic wave from the processed surface Sa side of substrate S to drop Q.The solvent that ultrasonic irradiation portion 13a makes drop Q comprise by hyperacoustic energy is separated.Heating part 13b is configured at the Sb side, the back side (-Z side) of substrate S.Heating part 13b is from Sb side, the back side heating drop Q of substrate S.Heating part 13b makes drop Q comprise solvent evaporation by thermal energy.
Atmosphere adjustment part 13c adjusts the atmosphere of the surrounding of drop Q.Chamber (chamber) device etc. is such as used to be used as atmosphere adjustment part 13c.Atmosphere around drop Q can be adjusted to nitrogen atmosphere by atmosphere adjustment part 13c.In addition, atmosphere adjustment part 13c can be adjusted to the atmosphere corresponding to solvent kind.Not shown gas supply part and exhaust portion is provided with in the 13c of atmosphere adjustment part.The kind of the gas supplied from the surrounding of gas supply part to drop Q by adjustment, quantity delivered, the timing of supply, the air displacement of exhaust portion, the timing etc. of exhaust, and the atmosphere of the surrounding of drop Q can be adjusted to desired atmosphere.
In addition, also can be following structure: the adjusting mechanism (not shown) that can adjust the atmosphere of the entirety of processing unit 10 is set, the atmosphere of the surrounding of drop Q can be adjusted by the atmosphere of the entirety of this adjusting mechanism adjustment processing unit 10.
In addition, solvent removing unit 13 can be following structure: under the surrounding of drop Q being set to room temperature environment by atmosphere adjustment part 13c or under decompression, the solvent of drop Q is gasified naturally, thus removes solvent from drop Q.In addition, solvent removing unit 13 also can be the structure in the Ultraviolet radiation portion (not shown) had drop Q irradiation ultraviolet radiation.In this case, after drop Q removes solvent, the drop Q after removing solvent can be solidified by ultraviolet energy.
The 3rd roller R3 and the 4th roller R4 is configured with in+X the side of solvent removing unit 13.3rd roller R3 is configured at the second roller 12b in the identical position of Z coordinate.Between the 3rd roller R3 and the second roller 12b, carrying substrate S becomes the parallel plane posture with XZ to make substrate S.
4th roller R4 is configured at the first roller 12a in the identical position of Z coordinate.The configuration of the 4th roller R4 is not limited to illustrated position, also can be configured at other positions.
Fig. 5 A and Fig. 5 B be represent on the processed surface Sa of substrate S, be configured with drop Q state under the figure of front and back change when substrate S is tilted.Fig. 5 A represent by substrate S tilt before appearance, Fig. 5 B represent by substrate S tilt after appearance.
As shown in Figure 5A, before being tilted by substrate S, the drop Q be configured on the processed surface Sa of substrate S configures with indeformable and stable state.On the other hand, as shown in Figure 5 B, when being tilted by substrate S, drop Q, due to the effect of gravity, is out of shape in the mode flowed along gravity direction on the processed surface Sa of substrate S.By this distortion, the orientation of the crystal of the solvent that drop Q comprises becomes easily consistent with the direction of flowing, and forms the anisotropy of structure.
Such as on the processed surface Sa of substrate S, be formed with concavo-convex etc. structure, or the processed surface Sa of substrate S has the situation of the surface energy of the drop Q for lyophily and sparse fluidity etc., in the drop Q of the interface of the processed surface Sa with substrate S, crystal grows to the direction of the impact by this surface energy.On the other hand, in the drop Q of the part left from the interface of the processed surface Sa with substrate S, the impact that the direction of growth of crystal is easily flowed, such as easily consistent with the direction of flowing.
Like this, shape variant part 12 uses the first roller 12a and the second roller 12b, with substrate S-phase for X-direction to+Z side only tilt angle theta
1state carrying substrate S.Like this, shape variant part 12 makes the shape of the drop on the processed surface Sa of substrate S be out of shape in the mode extended towards-X side (another direction) from+X side (direction).
In addition, about the angle θ that substrate S is tilted
1, the kind of the solvent comprised according to concentration and viscosity, the drop Q of the first roller 12a and the second roller 12b coordinate position in the X direction, time that drop Q passes through between the first roller 12a and the second roller 12b, drop Q and the kind of organic semiconducting materials, drop Q will be made to be out of shape region deformation direction on size (size of the X-direction of film forming region Pg) etc. set.About angle θ
1optimum value, can in advance by experiment or simulation etc. obtain.
The substrate board treatment 100 formed as described above, under the control of control part CONT, manufactures the display element (electronic device) of organic EL element, liquid crystal display cells etc. by spool mode.Below, illustrate that the substrate board treatment 100 of use said structure is to manufacture the operation of display element.
First, the substrate S of the band shape be wound on not shown roller is arranged on substrate supply unit 2.Control part CONT is to send the mode of aforesaid substrate S to control the rotation of not shown roller in this state from substrate supply unit 2.Then, control part CONT controls, and the not shown roller that the aforesaid substrate S after by processing substrate portion 3 is arranged on substrate recoverer 4 batches.Control part CONT is by controlling this substrate supply unit 2 and substrate recoverer 4 and can to the processed surface Sa of processing substrate portion 3 carrying substrate S continuously.
Control part CONT after substrate S sends from substrate supply unit 2 to being batched by substrate recoverer 4 between, while control the Handling device 20 in processing substrate portion 3 and make substrate S suitably be carried in aforesaid substrate handling part 3, control treatment device 10 and make the inscape of display element be formed in successively on the processed surface Sa of substrate S.
As an example, illustrate that the film forming region Pg under the state being formed with source electrode Es and drain electrode Ed on substrate S between source electrode Es and drain electrode Ed forms the action of organic semiconductor thin-film.
As shown in Figure 6, control part CONT controls the drop discharge portion 11a of drop supply unit 11, the multiple film forming region Pg on the processed surface Sa of substrate S is discharged to the drop Q (supply step) of ormal weight.Now, as shown in Figure 9 A, drop Q is configured at the+X side end of film forming region Pg in the mode overlapping with a part of drain electrode Ed.
Next, control part CONT controls the first roller 12a, the second roller 12b, the 3rd roller R3 and the 4th roller R4 and makes substrate S to the carrying of+X-direction.After drop Q arrives the sloping portion Sl of substrate S by the carrying of substrate S, due to the effect of gravity, as shown in Figure 7, drop Q is out of shape (distortion operation) in the mode that effluent is dynamic along gravity direction to-X on the processed surface Sa of substrate S.As shown in Figure 9 B, by the distortion of drop Q, drop Q is dynamic from drain electrode Ed to source electrode Es effluent.
As described above, the angle θ tilted by substrate S is set
1optimum value.Therefore, when drop Q arrives the second roller 12b by the carrying of substrate S, as shown in Figure 9 C, drop Q becomes the state expanded in the entirety of film forming region Pg in the mode overlapping with a part of source electrode Es.Like this, drop Q is out of shape in the mode dynamic from drain electrode Ed Lateral Source electrode Es effluent, thus the orientation of the crystal of solvent that drop Q comprises is easily consistent with the direction (X-direction) of flowing, the anisotropy that formation constructs.
Then, as shown in Figure 8, by the control of control part CONT, and make substrate S to the carrying of+X-direction, drop Q moves to solvent removing unit 13.Control part CONT, in solvent removing unit 13, controls at least one party among ultrasonic irradiation portion 13a and heating part 13b, and the drop Q be out of shape from shape removes solvent, thus forms organic semiconductor thin-film F (removal step).
Such as, control part CONT controls ultrasonic irradiation portion 13a and irradiates ultrasonic wave from the processed surface Sa side of substrate S to drop Q, and thus, solvent drop Q being comprised by hyperacoustic energy is separated.In addition, control part CONT controls heating part 13b and from the Sb side, the back side of substrate S, drop Q is heated, thus, and the solvent evaporation being made drop Q comprise by thermal energy.
By this action, drop Q removes solvent from the source electrode Es side (-X side) of the front as deformation direction (-X-direction) towards the drain electrode Ed side (+X side) of the base end side as deformation direction.Therefore, as shown in fig. 9d, the crystal of the organic semiconducting materials that drop Q comprises is from source electrode Es side towards drain electrode Ed side direction+X-direction growth, and organic semiconducting materials is to direction (+X-direction) crystallization.Like this, by making organic semiconducting materials to+X-direction crystallization, and the organic semiconductor thin-film F of the structure that electric charge easily flows in X direction is obtained.
In addition, control part CONT also can controlled atmospher adjustment part 13c, solvent removing unit 13 is set to room temperature environment, makes the solvent of drop Q naturally gasify in the present context.In addition, when being provided with ultraviolet removing unit in solvent removing unit 13, control part CONT controls ultraviolet removing unit, after drop Q removes solvent, by ultraviolet energy, organic semiconductor thin-film F is solidified.Through above operation, between source electrode Es and drain electrode Ed, form organic semiconductor thin-film F.
As described above, according to the present embodiment, the processing unit 10 that the processed surface Sa of substrate S is formed organic semiconductor thin-film has: drop supply unit 11, and the drop Q comprising the solvent of the material of organic semiconductor thin-film is supplied to the processed surface Sa of substrate S by it; Shape variant part 12, it makes the shape of the drop Q on the processed surface Sa of substrate S in the mode extended towards-X side from+X side, namely to be out of shape across the mode in the gap between drain electrode Ed and source electrode Es; Solvent removing unit 13, it removes solvent to the drop Q after the extension from+X side towards-X side.Therefore, it is possible to manufacture the high organic semiconductor thin-film F of electrical characteristic.
In addition, according to the present embodiment, the film forming method that the processed surface Sa of substrate S is formed organic semiconductor thin-film F has: supply step, and the drop Q comprising the solvent of the material of organic semiconductor thin-film F is supplied to the processed surface Sa of substrate S by it; Distortion operation, it makes the shape of the drop Q on the processed surface Sa of substrate S in the mode extended towards-X side from+X side, namely to be out of shape across the mode in the gap between drain electrode Ed and source electrode Es; Removal step, it removes solvent to the drop Q extended towards-X side from+X side.Therefore, it is possible to manufacture the high organic semiconductor thin-film F of electrical characteristic accurately to substrate S.
[the second execution mode]
Next, the second execution mode of the present invention is described.
Figure 10 is the figure of the structure of the processing unit 210 of the substrate board treatment 200 representing present embodiment.
As shown in Figure 10, processing unit 210 has drop supply unit 211, shape variant part 212 and solvent removing unit 213.
The structure (ultrasonic irradiation portion 213a, heating part 213b and atmosphere adjustment part 213c) of solvent removing unit 213 is identical with the structure of the solvent removing unit 13 of the first execution mode.
Drop Q is supplied to the processed surface Sa of substrate S by drop supply unit 211.Drop supply unit 211 has the drop discharge portion 211a discharged by drop Q.Drop discharge portion 211a can discharge the drop Q of ormal weight to the multiple film forming region Pg (with reference to Figure 12 A ~ Figure 12 D etc.) on the processed surface Sa of substrate S.
As shown in Figure 12 A ~ Figure 12 D, the processed surface Sa of substrate S is formed with the source electrode Es and drain electrode Ed that form as the thin-film transistor of transistor unit.In the present embodiment, in source electrode Es and drain electrode Ed, source electrode Es is configured at the downstream (+X side) in the carrying direction (X-direction) of substrate S, drain electrode Ed is configured at the upstream side (-X side) in the carrying direction of substrate S, and this point is different from the first execution mode.
As shown in Figure 10, shape variant part 212 makes the shape of the drop Q of the processed surface Sa being configured at substrate S be out of shape.Shape variant part 212 has the first roller 212a and the second roller 212b.The back side Sb of the first roller 212a and substrate S rotates contiguously.Second roller 212b is configured at the downstream (+X side) in the direction (carrying direction :+X-direction) that substrate S is handled upside down relative to the first roller 212a, rotates contiguously with the processed surface Sa of substrate S.Second roller 212b is identical with the first roller 12a in above-mentioned first execution mode, has: the contact site contacted with the end (such as+Y side end) of the side of the short side direction of substrate S; The contact site contacted with the end (such as-Y side end) of the opposite side of the short side direction of substrate S; The axle portion that two contact sites are linked up.In the present embodiment, the first roller 212a and the second roller 212b also can be called substrate S to tilt with the rake making drop Q flow on substrate S due to gravity.
When two contact sites of the second roller 212b contact with the processed surface Sa of substrate S, between the processed surface Sa and axle portion of substrate S, form gap.This gap is formed as can for by drop discharge portion 211a discharge, the drop Q be configured on the processed surface Sa of substrate S does not pass through contiguously with axle portion.
In addition, as shown in Figure 10, the second roller 212b is configured at-Z side relative to the first roller 212a.The part of the substrate S between the first roller 212a and the second roller 212b becomes downstream with the angle θ specified
2oblique sloping portion Sl is rolled to-Z.Sloping portion Sl is with angle θ
2be handled upside down under the state tilted.
About the angle θ that substrate S is tilted
2, the kind of the solvent comprised according to concentration and viscosity, the drop Q of the first roller 212a and the second roller 212b coordinate position in the X direction, time that drop Q passes through between the first roller 212a and the second roller 212b, drop Q and the kind of organic semiconducting materials, drop Q will be made to be out of shape region deformation direction on size (size of the X-direction of film forming region Pg) etc. set.About angle θ
2optimum value, can in advance by experiment or simulation etc. obtain.
Next, the processing unit 210 using and form as described above is described, under the state that substrate S is formed with source electrode Es and drain electrode Ed, the film forming region Pg between source electrode Es and drain electrode Ed is formed the action of organic semiconductor thin-film.
First, control part CONT controls the drop discharge portion 211a of drop supply unit 211, the multiple film forming region Pg on the processed surface Sa of substrate S is discharged to the drop Q (supply step) of ormal weight.Now, as illustrated in fig. 12, drop Q is configured at the-X side end of film forming region Pg in the mode overlapping with a part of drain electrode Ed.
Next, control part CONT controls the first roller 212a, the second roller 212b, the 3rd roller R3 and the 4th roller R4 and makes substrate S to the carrying of+X-direction.When drop Q is by the carrying of substrate S after arriving the sloping portion Sl of substrate S, due to the effect of gravity, as shown in figure 11, drop Q is out of shape (distortion operation) in the mode that effluent is dynamic along gravity direction to+X on the processed surface Sa of substrate S.Due to the distortion of drop Q, as shown in Figure 12 B, drop Q side direction+X-direction flowing from drain electrode Ed to source electrode Es.
As described above, the angle θ tilted by substrate S is set
2optimum value.Therefore, when drop Q arrives the second roller 212b by the carrying of substrate S, as indicated in fig. 12 c, drop Q becomes the state expanded in the entirety of film forming region Pg in the mode overlapping with a part of source electrode Es.Like this, drop Q is out of shape in the mode dynamic from drain electrode Ed Lateral Source electrode Es effluent, thus the orientation of the crystal of solvent that drop Q comprises is easily consistent with the direction (X-direction) of flowing, the anisotropy that formation constructs.
Then, by the control of control part CONT, and make substrate S to the carrying of+X-direction, drop Q moves to solvent removing unit 213.Control part CONT, in solvent removing unit 213, controls at least one party among ultrasonic irradiation portion 213a and heating part 213b, and the drop Q be out of shape from shape removes solvent, thus forms organic semiconductor thin-film F (removal step).
By above action, drop Q removes solvent from the source electrode Es side (+X side) of the front as deformation direction (+X-direction) towards the drain electrode Ed side (-X side) of the base end side as deformation direction.Therefore, as indicated in fig. 12d, the crystal of the organic semiconducting materials that drop Q comprises is from source electrode Es side towards drain electrode Ed side direction-X-direction growth, and organic semiconducting materials is to direction (-X-direction) crystallization.Like this, by making organic semiconducting materials to-X-direction crystallization, and the organic semiconductor thin-film F of the structure that electric charge easily flows in X direction is obtained.
As described above, because the processing unit 210 of present embodiment has: drop supply unit 211, the drop Q comprising the solvent of the material of organic semiconductor thin-film is supplied to the processed surface Sa of substrate S by it; Shape variant part 212, it makes the shape of the drop Q on the processed surface Sa of substrate S in the mode extended towards+X side from-X side, namely to be out of shape across the mode in the gap between drain electrode Ed and source electrode Es; Solvent removing unit 213, it removes solvent, even if so when the direction making the shape of drop Q be out of shape is different from the first execution mode, also can manufacture the organic semiconductor thin-film F that electrical characteristic is high to the drop Q extended towards+X side from-X side.
[the 3rd execution mode]
Next, the 3rd execution mode of the present invention is described.
Figure 13 is the figure of the structure of the processing unit 310 of the substrate board treatment 300 representing present embodiment.
As shown in figure 13, processing unit 310 has drop supply unit 311, shape variant part 312 and solvent removing unit 313.In the present embodiment, the structure of shape variant part 312 is different from the respective embodiments described above.In addition, the structure of drop supply unit 311 (drop discharge portion 311a) and solvent removing unit 313 (ultrasonic irradiation portion 313a, heating part 313b and atmosphere adjustment part 313c) is identical with the drop supply unit 11 of the first execution mode and the structure of solvent removing unit 13 respectively.
In addition, about the structure of the processed surface Sa of substrate S, be formed with the source electrode and drain electrode that form as the thin-film transistor of transistor unit, source electrode is configured at the upstream side (-X side) in the carrying direction (X-direction) of substrate S, drain electrode is configured at the downstream (+X side) in the carrying direction of substrate S, be set with film forming region in the mode of a part for the part and drain electrode that comprise source electrode, this point is identical with the first execution mode.
The shape variant part 312 of present embodiment has airflow function portion 312a.Airflow function portion 312a to the processed surface Sa of substrate S such as to-X-direction blow gas AR.Thus, airflow function portion 312a can make air-flow have an effect to drop Q.By airflow function portion 312a, air-flow is had an effect to drop Q, and drop Q is out of shape in the mode extended to the direction (-X-direction) of air-flow.In addition, the blowing direction based on the gas AR of airflow function portion 312a can be set to+X-direction.In this case, drop Q is out of shape in the mode extended to+X-direction.
Airflow function portion 312a can adjust the intensity of air-flow by the ejection pressure of the gas AR of adjustment ejection and spray volume.About ejection pressure and the spray volume of gas AR, the kind of the solvent comprised according to concentration and viscosity, the drop Q of the displacement of the drop Q such as obtained by the carrying based on substrate S before airflow function portion 312a and translational speed, drop Q and the kind of organic semiconducting materials, drop Q will be made to be out of shape region deformation direction on size (size of the X-direction of film forming region Pg) etc. set.About the ejection pressure of gas AR and the optimum value of spray volume, can obtain with simulation etc. by experiment in advance.
Next, the action using the processing unit 310 of present embodiment to form organic semiconductor thin-film on substrate S is described.
First, as shown in figure 14, control part CONT controls the drop discharge portion 311a of drop supply unit 311, the multiple film forming regions on the processed surface Sa of substrate S is discharged to the drop Q (supply step) of ormal weight.Now drop Q is configured at the+X side end of film forming region in the mode overlapping with a part for drain electrode.
Next, control part CONT controls the first roller R1, the second roller R2, the 3rd roller R3 and the 4th roller R4 and makes substrate S to the carrying of+X-direction.By the carrying of substrate S, when drop Q arrives the-X side of shape variant part 312, as shown in figure 15, control part CONT controls airflow function portion 312a, to-X-direction blow gas AR.Like this, make-air-flow of X-direction has an effect to drop Q.By this air-flow, drop Q is out of shape (distortion operation) in the mode dynamic to-X effluent.By the distortion of drop Q, drop Q is dynamic from drain electrode to source electrode effluent.
As described above, the ejection pressure of gas AR and the optimum value of spray volume is set.Therefore, when drop Q arrives the second roller R2 by the carrying of substrate S, drop Q becomes the state expanded in the entirety of film forming region in the mode overlapping with a part for source electrode.Like this, drop Q is out of shape in the mode dynamic from drain electrode Lateral Source electrode effluent, thus the orientation of the crystal of solvent that drop Q comprises is easily consistent with the direction (X-direction) of flowing, the anisotropy that formation constructs.
Then, by the control of control part CONT, and make substrate S to the carrying of+X-direction, and drop Q move to solvent removing unit 313.Control part CONT, in solvent removing unit 313, controls at least one party among ultrasonic irradiation portion 313a and heating part 313b, and as shown in figure 16, the drop Q be out of shape from shape removes solvent, and forms organic semiconductor thin-film F (removal step).
By above action, drop Q removes solvent from the source electrode side (-X side) of the front as deformation direction (-X-direction) towards the drain electrode side (+X side) of the base end side as deformation direction.Therefore, crystal side direction+X-direction growth from source electrode side towards drain electrode of the organic semiconducting materials that drop Q comprises, and organic semiconducting materials is to direction (+X-direction) crystallization.Like this, by making organic semiconducting materials to+X-direction crystallization, and the organic semiconductor thin-film F of the structure that electric charge easily flows in X direction is obtained.
As described above, processing unit 310 due to present embodiment has airflow function portion 312a, its can by the processed surface Sa of substrate S to such as-X-direction blow gas AR, and air-flow is had an effect, so drop Q can be made to be out of shape in the mode extended to the direction of air-flow to drop Q.Thereby, it is possible to manufacture the high organic semiconductor thin-film F of electrical characteristic.
[the 4th execution mode]
Next, the 4th execution mode of the present invention is described.
Figure 17 is the figure of the structure of the processing unit 410 of the substrate board treatment 400 representing present embodiment.
As shown in figure 17, processing unit 410 has drop supply unit 411, shape variant part 412 and solvent removing unit 413.In the present embodiment, the structure of shape variant part 412 is different from the respective embodiments described above.In addition, the structure of drop supply unit 411 (drop discharge portion 411a) and solvent removing unit 413 (ultrasonic irradiation portion 413a, heating part 413b and atmosphere adjustment part 413c) is identical with the drop supply unit 411 of the first execution mode and the structure of solvent removing unit 413 respectively.
Shape variant part 412 makes the shape of the drop Q of the processed surface Sa being configured at substrate S be out of shape.Shape variant part 412 has the first roller R1, the second roller R2, the 3rd roller R3, SHAPE DETECTION portion 412a and tilt adjustments portion 412b.
The back side Sb of the first roller R1 and substrate S rotates contiguously.Second roller R2 is configured at the downstream (+X side) in the direction (carrying direction :+X-direction) that substrate S is handled upside down relative to the first roller R1, rotates contiguously with the processed surface Sa of substrate S.Second roller R2 is identical with the first roller 12a in above-mentioned first execution mode, has: the contact site contacted with the end (such as+Y side end) of the side of the short side direction of substrate S, the contact site contacted with the end (such as-Y side end) of the opposite side of the short side direction of substrate S, the axle portion linked up by two contact sites.
In addition, the second roller R2 is configured at-Z side relative to the first roller R1.Substrate S between the first roller R1 and the second roller R2 is that downstream is with the angle θ specified
toblique sloping portion Sl is rolled to-Z.Sloping portion Sl is with angle θ
tbe handled upside down under the state tilted.
3rd roller R3 is configured at the second roller R2 in the identical position of Z coordinate.With the mode carrying substrate S making substrate S become the parallel plane posture with XY between the 3rd roller R3 and the second roller R2.
The 4th roller R4 is provided with in the downstream (+X side) of the 3rd roller R3.4th roller R4 is configured at the first roller R1 in the identical position of Z coordinate.The configuration of the 4th roller R4 is not limited to illustrated position, also can be configured at other positions.
SHAPE DETECTION portion 412a detects the elongation state of the drop Q be out of shape in sloping portion Sl.At this, the elongation state of drop Q is the elongation (elongation speed) of the drop Q of such as time per unit.As SHAPE DETECTION portion 412a, use the filming apparatus etc. of the shooting drop Q such as such as CCD camera.Testing result can be sent to control part CONT by SHAPE DETECTION portion 412a.
Tilt adjustments portion 412b adjusts the second roller R2 and the 3rd roller R3 in the position of Z-direction by the control of control part CONT.Tilt adjustments portion 412b has not shown motor mechanism or cylinder mechanism etc., makes the second roller R2 and the 3rd roller R3 along the driving mechanism (not shown) of Z-direction movement.In the present embodiment, the second roller R2 and the tilt adjustments portion 412b of the first roller R1 that the position of Z-direction is fixed, the position changeable of Z-direction form rake, and substrate S tilts to make drop Q flow on substrate S due to gravity by it.
The second roller R2 and the 3rd roller R3 is made to move along Z-direction and adjust the tilt angle theta of sloping portion Sl by tilt adjustments portion 412b
t.By adjustment tilt angle theta
t, and the flow velocity of drop Q can be adjusted.The concentration of the organic semiconducting materials that the flow velocity of drop Q comprises from such as drop Q is correspondingly different.Tilt adjustments portion 412b adjusts the tilt angle theta of sloping portion Sl according to the concentration of organic semiconducting materials
t, thus the flow velocity of drop Q can be adjusted.In addition, about the tilt angle theta of elongation state of pressing drop Q
t, obtain optimum value with simulation etc. by experiment in advance, this optimum value be stored in control part CONT.
Using the processing unit 410 of said structure in the film forming situation of substrate S, control part CONT controls the drop discharge portion 411a of drop supply unit 411, the multiple film forming regions on the processed surface Sa of substrate S is discharged to the drop Q (supply step) of ormal weight.Now first as shown in Figure 12 B, drop Q is configured at the-X side end of film forming region in the mode overlapping with a part for drain electrode.
Next, control part CONT uses the first roller R1, the second roller R2, the 3rd roller R3 and the 4th roller R4 and makes substrate S to the carrying of+X-direction.Now, by the tilt angle theta of the sloping portion Sl of substrate S
tbe set as angle (the such as θ preset
1).In this condition, when drop Q is by the carrying of substrate S after arriving shape variant part 412, due to the effect of gravity, drop Q to be out of shape (distortion operation) along gravity direction to the mode that+X effluent is dynamic on the processed surface Sa of substrate S.
Now, control part CONT controls SHAPE DETECTION portion 412a and detects the elongation state of drop Q, and makes testing result be sent to control part CONT.Such as, when the viscosity of drop Q, organic semiconducting materials different by each drop Q containing concentration etc., elongation state is different by each drop Q.Under these circumstances, if the angle of inclination of sloping portion Sl is constant, then when drop Q arrives the second roller R2, different according to the state of drop Q, can consider that extension does not arrive the situation, on the contrary of film forming region entirety, the situation etc. that drop Q extends with exceeding film forming region.
On the other hand, in the present embodiment, control part CONT adjusts the tilt angle theta of the sloping portion Sl of substrate S according to the testing result of Shape-based interpolation test section 412a
t.Such as, control part CONT selects the value corresponding with the testing result of Shape-based interpolation test section 412a among the optimum value prestored, adjustment tilt angle theta
tto make it close to the value of this selection.
Like this, in the present embodiment, being set to can by the tilt angle theta of adjustment sloping portion Sl
tand adjust the structure of the flow velocity of drop Q.Therefore, though when drop Q state (such as viscosity, organic semiconducting materials containing concentration etc.) different, also can form the film of organic semiconducting materials accurately.
Technical scope of the present invention is not limited to above-mentioned execution mode, can add suitable change without departing from the spirit and scope of the invention.
Such as, in the above-described embodiment, illustrate the situation forming organic semiconductor thin-film F as film, but be not limited to this.Also identical explanation can be suitable for when forming film (such as the forming the film etc. of organic EL layer) of other kinds.
In addition, in the above-described embodiment, illustrate and the position of the heating part being located at solvent removing unit is fixed and the structure used, but be not limited to this.Heating part also can as can in X direction, the structure of at least one direction movement of Y-direction and Z-direction.Such as, also can be the structure of mode to+X-direction movement of the movement of following drop Q.
In addition, in the above-described embodiment, illustrate and use the first roller and these two rollers of the second roller to carry out the structure of carrying substrate S in shape variant part, but be not limited to this.Also can be such as microscope carrier is set in shape variant part, the structure of carrying under the state that substrate S is placed in microscope carrier.In this case, as long as configure at the upstream side of microscope carrier and downstream (the not applying tension force) buffer part making substrate S bend on the carrying direction of substrate S.
[the 5th execution mode]
Next, the 5th execution mode of the present invention is described.In the present embodiment, identical Reference numeral is marked to the inscape identical with above-mentioned execution mode, and simplify or the description thereof will be omitted.
The substrate board treatment of present embodiment has the structure identical with the substrate board treatment 100 of the first execution mode shown in Fig. 1.In the present embodiment, processing unit 510 as substrate board treatment is provided with exposure device, and also connect as required (inline) arranges the device of the operation (photosensitive layer formation process, photosensitive layer developing procedure etc.) born before and after it.
In the processing substrate portion 3 of present embodiment, be provided with the alignment cameras (not shown) matched with processing unit 510 as exposure device.Alignment cameras such as detects independently respectively along the-Y side end edge of substrate S and the alignment mark (not illustrating) along the formation of+Y side end edge.Testing result based on alignment cameras is sent to control part CONT.
Figure 18 is the figure of the structure representing processing unit 510.Figure 19 is the figure of a part of structure of the processed surface Sa representing substrate S.
As shown in figure 18, processing unit 510 has material supply unit 511, illumination part 512, drop supply unit 513 and solvent removing unit 514.Processing unit 510 forms organic semiconductor thin-film on the processed surface Sa of substrate S.
As shown in figure 19, the processed surface Sa of substrate S is formed with the source electrode Es formed as the thin-film transistor of transistor unit and drain electrode Ed.In the present embodiment, in source electrode Es and drain electrode Ed, source electrode Es is configured at the upstream side (-X side) in the carrying direction (X-direction) of substrate S, and drain electrode Ed is configured at the downstream (+X side) in the carrying direction of substrate S.
Film forming region Pg is the region that above-mentioned organic semiconductor thin-film is formed.Film forming region Pg is formed as comprising a part of source electrode Es and a part of drain electrode Ed.In film forming region Pg, organic semiconductor thin-film is to be formed with a part of source electrode Es and the overlapping respectively mode of a part of drain electrode Ed.Film forming region Pg can be shape (such as circle, ellipse, polygon or their combination) in addition to a rectangle.
Material supply unit 511 will accept the irradiation of light and construct the processed surface Sa that the material changed is provided to substrate S.As such material, can list interfacial agent that such as silane coupling agent, self-assembled monolayer (SAM:Self-Assembled Monolayer) etc. use, as liquid crystal vertical-tropism agent and by the polyimide-type materials etc. known.
About these materials, both only can use one, and also can combine multiple and use.These materials such as when being subject to the irradiation of the light such as ultraviolet molecular configuration change, such as lyophily is presented to organic solvent etc.Below, in the present embodiment, the situation of the interfacial agent used in above-mentioned material is illustrated.
As shown in figure 18, material supply unit 511 has the coating part 511a on processed surface Sa above-mentioned material being coated on substrate S.In the film forming region Pg of coating part 511a on processed surface Sa to be not such as on source electrode Es and drain electrode Ed region coating above-mentioned material to become the thickness of regulation, thus formed material layer 15.
Illumination part 512 is configured at the downstream (+X side) in the carrying direction (+X-direction) of substrate S relative to material supply unit 511.Illumination part 512 irradiates light to the material layer 15 be formed on the processed surface Sa of substrate S.Illumination part 512 has the microscope carrier roller 512a of supporting substrates S and irradiates the ultraviolet Ultraviolet radiation portion 512b as light to material layer 15.
Microscope carrier roller 512a is such as formed as cylindric or cylindric, is set to rotate around Y-axis.Microscope carrier roller 512a carrys out the back side Sb of supporting substrates S by its outer peripheral face (periphery).
The processed surface Sa irradiation ultraviolet radiation of the substrate S that Ultraviolet radiation portion 512b supports directed through microscope carrier roller 512a.Ultraviolet radiation portion 512b is irradiated above-mentioned ultraviolet to make ultraviolet bend the outer peripheral face along microscope carrier roller 512a with the incidence angle θ of regulation by the mode of material layer 15 incidence on the substrate S that supports.
Ultraviolet radiation portion 512b is to direction (-X-direction) the irradiation ultraviolet radiation UV in the carrying direction (+X-direction) towards substrate S.That is, Ultraviolet radiation portion 512b to contrary with the carrying direction (+X-direction) of substrate S towards direction (-X-direction) irradiation ultraviolet radiation UV.In addition, pre-set the rotating mechanism (not shown) that such as Ultraviolet radiation portion 512b is rotated around θ Y-axis, can the change of the position around θ Y-axis of Ultraviolet radiation portion 512b be controlled by the control of control part CONT and adjust ultraviolet incidence angle θ.
From the laser that the ultraviolet of Ultraviolet radiation portion 512b irradiation is the slit-shaped such as along Y-direction with long side direction.About the ultraviolet optical path length in X-direction, from the viewpoint maintaining angle θ, such as a few about mm can be set as.In addition, illustrate ultraviolet as light, but be not limited to this.Such as can irradiate the energy (wavelength) of the light corresponding to material.In addition, by the transporting velocity of adjustment substrate S, the exposure of light to material layer 15 can also be adjusted.
Drop Q is supplied to the processed surface Sa of substrate S by drop supply unit 513.Drop supply unit 513 is configured at the downstream (+X side) in the carrying direction (+X-direction) of substrate S relative to illumination part 512.Drop Q comprises material and its solvent of the film being formed at substrate S.As the material that drop Q comprises, list the organic semiconducting materials such as the pentacene of such as silylethynyl replacement.In addition, as the solvent that drop Q comprises, list the organic solvents such as such as toluene.
Drop supply unit 513 has the drop discharge portion 13a discharging drop Q.Drop discharge portion 13a discharges the drop Q of ormal weight to film forming region Pg as shown in figure 19.Drop discharge portion 13a can discharge in the mode making drop Q drop in film forming region Pg.As drop discharge portion 13a, the structure etc. of such as being discharged drop Q by ink-jetting style can be listed.
Solvent removing unit 514 is configured at the downstream (+X side) in the carrying direction (+X-direction) of substrate S relative to drop supply unit 513.Solvent removing unit 514 has ultrasonic irradiation portion 514a, heating part 514b and atmosphere adjustment part 514c.Solvent removing unit 514 uses at least one party among ultrasonic irradiation portion 514a and heating part 514b, removes solvent from the drop Q being provided to substrate S.Solvent removing unit 514 also can have the drying section making drop Q drying.
Ultrasonic irradiation portion 514a is configured at the processed surface Sa side (+Z side) of substrate S.Ultrasonic irradiation portion 514a irradiates ultrasonic wave from the processed surface Sa side of substrate S to drop Q.The solvent that ultrasonic irradiation portion 514a makes drop Q comprise by hyperacoustic energy is separated.Heating part 514b is configured at the Sb side, the back side (-Z side) of substrate S.Heating part 514b is from Sb side, the back side heating drop Q of substrate S.Heating part 514b is by thermal energy, and the solvent evaporation that drop Q is comprised.
Atmosphere adjustment part 514c adjusts the atmosphere of the surrounding of drop Q.Chamber device etc. is such as used to be used as atmosphere adjustment part 514c.The atmosphere of the surrounding of drop Q can be adjusted to nitrogen atmosphere by atmosphere adjustment part 514c.In addition, atmosphere adjustment part 13c can be adjusted to the atmosphere corresponding to the kind of solvent.Not shown gas supply part and exhaust portion is provided with in the 514c of atmosphere adjustment part.The kind of the gas supplied from the surrounding of gas supply part to drop Q by adjustment, quantity delivered, the timing of supply, the air displacement of exhaust portion, the timing etc. of exhaust, and the atmosphere around drop Q can be adjusted to desired atmosphere.
In addition, also can be following structure: the adjusting mechanism (not shown) that can adjust the atmosphere of the entirety of processing unit 510 is set, the atmosphere that can be adjusted around drop Q by the atmosphere of the entirety of this adjusting mechanism adjustment processing unit 510.
In addition, solvent removing unit 514 can be following structure: under the surrounding of drop Q being set to room temperature environment by atmosphere adjustment part 514c or under decompression, the solvent of drop Q is gasified naturally, thus removes solvent from drop Q.In addition, solvent removing unit 514 also can be the structure in the Ultraviolet radiation portion (not shown) had drop Q irradiation ultraviolet radiation.In this case, after drop Q removes solvent, the drop Q after removing solvent can be solidified by ultraviolet energy.
The substrate board treatment of present embodiment as constituted above, under the control of control part CONT, manufactures the display element (electronic device) of organic EL element, liquid crystal display cells etc. by spool mode.Below, illustrate that the substrate board treatment of the present embodiment using said structure is to manufacture the operation of display element.
First, the substrate S of the band shape be wound on not shown roller is arranged on substrate supply unit 2.Control part CONT is to send the mode of aforesaid substrate S to control the rotation of not shown roller in this state from substrate supply unit 2.Then, control part CONT controls, and the not shown roller that the aforesaid substrate S after by processing substrate portion 3 is arranged on substrate recoverer 4 batches.This substrate supply unit 2 and substrate recoverer 4 is controlled by control part CONT, can to the processed surface Sa of processing substrate portion 3 carrying substrate S continuously.
Control part CONT after substrate S sends from substrate supply unit 2 to being batched by substrate recoverer 4 between, while control the Handling device 20 in processing substrate portion 3 and make substrate S suitably be carried in aforesaid substrate handling part 3, control treatment device 510 and make the inscape of display element be formed in successively on the processed surface Sa of substrate S.
As an example, under the state being formed with source electrode Es and drain electrode Ed at substrate S is described, the film forming region Pg between source electrode Es and drain electrode Ed forms the action of organic semiconductor thin-film.
First, as shown in figure 20, control part CONT controls coating part 511a, to the material of the part coating ormal weight of the multiple film forming region Pg on the processed surface Sa of substrate S.By this action, the processed surface Sa of substrate S forms material layer 15.That is, molecular configuration changes by the irradiation by ultraviolet (UV) material the surface of the film forming region Pg of substrate S can be layeredly coated on.
After defining material layer 15, control part CONT controls transport roller 500R etc. and makes substrate S to+X-direction carrying, and material layer 15 is configured on the microscope carrier roller 512a of illumination part 512.Then, as shown in figure 21, control part CONT controls, and makes to penetrate ultraviolet (UV) from Ultraviolet radiation portion 512b, and ultraviolet (UV) is irradiated material layer 15 with incidence angle θ.
Figure 22 and Figure 23 is the figure of the change represented molecular configuration during material layer 15 irradiation ultraviolet radiation UV.Figure 22 is the figure of the state of material layer 15 before representing irradiation ultraviolet radiation UV.Figure 23 is the figure of the state representing the material layer 15 after having irradiated ultraviolet (UV).In addition, Figure 24 is the figure schematically showing the thickness of material layer 15 before and after to material layer 15 irradiation ultraviolet radiation UV and the change of area.
As shown in figure 22, before irradiation ultraviolet radiation UV, the molecule M of the material (interfacial agent) of constituent material layer 15 becomes such as relative to the state that the processed surface Sa of substrate S erects with subvertical angle.In this case, material layer 15 becomes non-lyophily (such as, lyophobicity) relative to liquid such as organic solvents.Thus, even if when making above-mentioned drop Q drop on material layer 15, drop Q does not also expand.
On the other hand, by with the processed surface Sa irradiation ultraviolet radiation UV of incidence angle θ to substrate S, molecule M tilts in the mode of the incident direction towards ultraviolet (UV).Consequently, as shown in figure 23, become molecule M to have tilted the state of angle θ relative to the vertical direction of the processed surface Sa of substrate S.Thus, form the material layer 15 with anisotropic molecular configuration, relative to liquid such as organic solvents, material layer 15 has lyophily.Like this, the molecular configuration being subject to the material layer 15 of the irradiation of ultraviolet (UV) changes, and becomes the lyophily layer 16 relative to the liquid etc. of organic solvent with lyophily.That is, ultraviolet (UV) can irradiate from incline direction to the material layer 15 on the surface coating film forming region Pg and give anisotropy.
In addition, in the front and back that ultraviolet (UV) irradiates, each molecule M becomes the state of the angle θ that tilted from the state that the processed surface Sa with substrate S generally perpendicularly erects.Therefore, as shown in figure 24, the thickness of lyophily layer 16 is thinning compared with the thickness of material layer 15, and lyophily layer 16 becomes large overlooking lower area compared with material layer 15.
Next, by the control of control part CONT, and make substrate S to the carrying of+X-direction, lyophily layer 16 moves to-Z the side of drop discharge portion 13a.Then, by the control of control part CONT, as shown in figure 25, drop Q discharges from drop discharge portion 13a, and drop Q drops on lyophily layer 16.By the control of control part CONT, as shown in figure 26, drop Q is configured in the+X side end of lyophily layer 16.Consequently, drop Q is configured in the+X side end of film forming region Pg in the mode overlapping with a part of drain electrode Ed.
Lyophily layer 16 becomes lyophily relative to organic solvent.Therefore, be configured at the drop Q on lyophily layer 16 to expand on whole of lyophily layer 16.Thus, drop Q as shown in figure 27, is out of shape in the mode expanded to-X side from the+X side end of lyophily layer 16.Consequently, as shown in figure 28, drop Q becomes the state expanded in the entirety of lyophily layer 16.
Now, as shown in figure 29, drop Q becomes the state expanded in the entirety of film forming region Pg in the mode overlapping with a part of source electrode Es, and drain electrode Ed is connected by drop Q with between source electrode Es.Like this, by making drop Q be out of shape in the mode dynamic from drain electrode Ed Lateral Source electrode Es effluent, the orientation of the crystal of the solvent that drop Q comprises is easily consistent with the direction (-X-direction) of flowing and form the anisotropy constructed.
Then, by the control of control part CONT, and make substrate S to the carrying of+X-direction, drop Q moves to solvent removing unit 514.As shown in figure 30, control part CONT, in solvent removing unit 514, controls at least one party among ultrasonic irradiation portion 514a and heating part 514b, and the drop Q be out of shape from shape removes solvent, thus forms organic semiconductor thin-film F (removal step).
Such as, by the control of control part CONT, irradiate ultrasonic wave from ultrasonic irradiation portion 514a from the processed surface Sa side of substrate S to drop Q, by hyperacoustic energy, the solvent that drop Q comprises is separated.In addition, control heating part 514b by control part CONT and heat drop Q from the Sb side, the back side of substrate S, the solvent being made drop Q comprise by thermal energy is evaporated.
By this action, drop Q removes solvent from the source electrode Es side (-X side) of the front as deformation direction (-X-direction) towards the drain electrode Ed side (+X side) of the base end side as deformation direction.Therefore, as shown in figure 31, the crystal of the organic semiconducting materials that drop Q comprises is from source electrode Es side towards drain electrode Ed side direction+X-direction growth, and organic semiconducting materials is to direction (+X-direction) crystallization.Like this, by making organic semiconducting materials to+X-direction crystallization, and the organic semiconductor thin-film F of the structure that electric charge easily flows in X direction is obtained.In addition, the direction of growth of the crystal of organic semiconducting materials can be adjusted by the incidence angle θ of adjustment ultraviolet (UV).
In addition, control part CONT also can controlled atmospher adjustment part 514c, makes solvent removing unit 514 become room temperature environment, makes the solvent of drop Q naturally gasify in the present context.In addition, be provided with the situation of ultraviolet removing unit in solvent removing unit 514, control part CONT controls ultraviolet removing unit, after drop Q removes solvent, by ultraviolet energy, organic semiconductor thin-film F is solidified.Through above operation, between source electrode Es and drain electrode Ed, form organic semiconductor thin-film F.
As described above, processing unit 510 due to present embodiment is the processing unit 510 forming organic semiconductor thin-film on the processed surface Sa of substrate S, have: Ultraviolet radiation portion 12, it makes material layer 15 be changed to lyophily layer 16 to material layer 15 irradiation ultraviolet radiation UV, and described material layer 15 on substrate S, is formed with the irradiation that is subject to ultraviolet (UV) and constructs the material changed to obtain; Drop supply unit 513, the drop Q comprising the solvent of the material of organic semiconductor thin-film is supplied to lyophily layer 16 by it; Removing unit 14, it removes solvent, so the processing unit 510 of present embodiment can manufacture the high organic semiconductor thin-film F of electrical characteristic from the drop Q being supplied to lyophily layer 16.
Technical scope of the present invention is not limited to above-mentioned execution mode, can add suitable change without departing from the spirit and scope of the invention.
Such as, in the above-described embodiment, illustrate the situation forming organic semiconductor thin-film F as film, but be not limited to this.Also identical explanation can be suitable for when forming film (such as the forming the film etc. of organic EL layer) of other kinds.
In addition, in the above-described embodiment, illustrate and the position of the heating part being located at solvent removing unit is fixed and the structure used, but be not limited to this.Heating part also can be set to can in X direction, the structure of Y-direction and at least one direction movement of Z-direction.Such as, also can for the mode of the movement to follow drop Q and to the structure of+X-direction movement.
Description of reference numerals
S: substrate; Sa: processed surface; CONT: control part; Q: drop; Pg: film forming region; Sl: sloping portion; F: organic semiconductor thin-film; 100,200,300,400: substrate board treatment; 10,210,310,410: processing unit; 11,211,311,411: drop supply unit; 12,212,312,412: shape variant part; 13,213,313,413: solvent removing unit; 500R: transport roller; Es: source electrode; Ed: drain electrode; UV: ultraviolet; 511: material supply unit; 511a: coating part; 512: illumination part; 512a: microscope carrier roller; 512b: Ultraviolet radiation portion; 513: drop supply unit; 513a: drop discharge portion; 514: solvent removing unit; 514a: ultrasonic irradiation portion; 514b: heating part; 514c: atmosphere adjustment part; 15: material layer; 16: lyophily layer
Claims (39)
1. a film forming device, forms film on the surface of substrate, has:
Supply unit, the drop of the solvent of the material containing described film is supplied to the surface of described substrate by it;
Shape variant part, it makes the shape of the described drop on the surface of described substrate be out of shape in the mode extended towards another direction from a direction; And
Removing unit, it removes described solvent to the described drop extended towards another direction described from a described direction.
2. film forming device according to claim 1, is characterized in that,
Described removing unit makes described material from a described direction towards another direction crystallization described.
3. film forming device according to claim 1 and 2, is characterized in that,
Described removing unit has the drying section making described droplet drying.
4. the film forming device according to any one in claim 1 ~ claim 3, is characterized in that,
Described removing unit has the heating part of being heated by described drop.
5. the film forming device according to any one in claim 1 ~ claim 4, is characterized in that,
Described removing unit has irradiates hyperacoustic ultrasonic irradiation portion to described drop.
6. the film forming device according to any one in claim 1 ~ claim 5, is characterized in that,
Described shape variant part has the rake making the mode that described drop flows on the substrate due to gravity that described substrate is tilted.
7. the film forming device according to any one in claim 1 ~ claim 6, is characterized in that,
Described shape variant part has the airflow function portion making air-flow to described drop effect.
8. the film forming device according to any one in claim 1 ~ claim 7, is characterized in that,
Described shape variant part has adjustment part, and this adjustment part adjusts with the speed corresponding to the concentration of the described material contained by described solvent the flow velocity flowed towards another direction described from a described direction.
9. the film forming device according to any one in claim 1 ~ claim 8, is characterized in that,
Described removing unit has atmosphere adjustment part, and the surrounding of described drop is adjusted to the atmosphere corresponding to the kind of described solvent by this atmosphere adjustment part.
10. film forming device according to claim 8, is characterized in that,
Also there is the test section detected from a described direction towards the elongation state of the described drop in another direction described,
Described adjustment part adjusts the flowing of described drop according to the testing result of described elongation state.
11. 1 kinds of film forming methods, form film on the surface of substrate, have:
Supply step, the drop of the solvent of the material containing described film is supplied to the surface of described substrate by it;
Distortion operation, it makes the shape of the described drop on the surface of described substrate be out of shape in the mode extended towards another direction from a direction; And
Removal step, it removes described solvent to the described drop extended towards another direction described from a described direction.
12. film forming methods according to claim 11, is characterized in that,
Described removal step comprises makes described material from a described direction towards another direction crystallization described.
13. film forming methods according to claim 11 or 12, is characterized in that,
Described removal step comprises makes described droplet drying.
14. film forming methods according to any one in claim 11 ~ claim 13, is characterized in that,
Described removal step comprises and is heated by described drop.
15. film forming methods according to any one in claim 11 ~ claim 14, is characterized in that,
Described removal step comprises irradiates ultrasonic wave to described drop.
16. film forming methods according to any one in claim 11 ~ claim 15, is characterized in that,
Described distortion operation comprises by making described substrate tilt and makes described droplet flow.
17. film forming methods according to any one in claim 11 ~ claim 16, is characterized in that,
Described distortion operation comprises makes air-flow to described drop effect.
18. film forming methods according to any one in claim 11 ~ claim 17, is characterized in that,
Described distortion operation comprises with the speed corresponding to the concentration of the described material contained by described solvent to make described droplet flow.
19. film forming methods according to any one in claim 11 ~ claim 18, is characterized in that,
Described removal step comprises the surrounding of described drop is adjusted to the atmosphere corresponding to the kind of described solvent.
20. film forming methods according to any one in claim 11 ~ claim 19, is characterized in that also having:
Detect operation, it detects the elongation state from a described direction towards the described drop in another direction described;
Adjustment operation, it adjusts the flowing of described drop according to the testing result of described elongation state.
21. 1 kinds of film forming methods, on a surface of a substrate, form semiconductive thin film being set as comprising in the drain electrode of thin-film transistor and the film forming region of source electrode, described film forming method has:
Supply step, the drop of the solvent of the material containing described semiconductive thin film is supplied to a part for described film forming region by it;
Distortion operation, it makes the described drop of the part being supplied to described film forming region be out of shape in the mode extended along the direction of the crystallization between described drain electrode and described source electrode; And
Removal step, it removes described solvent from be out of shape described drop.
22. 1 kinds of film forming devices, form film on the surface of substrate, have:
Illumination part, its on the substrate, to being formed with the irradiation accepting light and the area illumination light constructing the material changed;
Supply unit, the drop of the solvent of the material containing described film is supplied to described region by it; And
Removing unit, it removes described solvent from the described drop being supplied to described region.
23. film forming devices according to claim 22, is characterized in that,
Described removing unit makes described material from a direction towards another direction crystallization.
24. film forming devices according to claim 22 or 23, is characterized in that,
Described removing unit has the drying section making described droplet drying.
25. film forming devices according to any one in claim 22 ~ claim 24, is characterized in that,
Described removing unit has the heating part of being heated by described drop.
26. film forming devices according to any one in claim 22 ~ claim 25, is characterized in that,
Described removing unit has irradiates hyperacoustic ultrasonic irradiation portion to described drop.
27. film forming devices according to any one in claim 22 ~ claim 26, is characterized in that,
Described removing unit has the atmosphere adjustment part of the atmosphere surrounding of described drop being adjusted to corresponding to the kind of described solvent.
28. film forming devices according to any one in claim 22 ~ claim 27, is characterized in that,
Described structure change comprises makes described material become lyophily for described solvent.
29. film forming devices according to any one in claim 22 ~ claim 28, is characterized in that,
Described material comprises at least one among silane coupling agent, interfacial agent, polyimide-type materials.
30. film forming devices according to any one in claim 22 ~ claim 29, is characterized in that,
Described supply unit supplies described drop in the mode described drop being dripped to described region.
31. 1 kinds of film forming methods, form film on the surface of substrate, have:
Light irradiation process, its on the substrate, to being formed with the irradiation accepting light and the area illumination light constructing the material changed;
Supply step, the drop of the solvent of the material containing described film is supplied to described region by it; And
Removal step, it removes described solvent from the described drop being supplied to described region.
32. film forming methods according to claim 31, is characterized in that,
Described removal step makes described material from a direction towards another direction crystallization.
33. film forming methods according to claim 31 or 32, is characterized in that,
Described removal step makes described droplet drying.
34. film forming methods according to any one in claim 31 ~ claim 33, is characterized in that,
Described drop heats by described removal step.
35. film forming methods according to any one in claim 31 ~ claim 34, is characterized in that,
Described removing unit operation irradiates ultrasonic wave to described drop.
36. film forming methods according to any one in claim 31 ~ claim 35, is characterized in that,
The surrounding of described drop is adjusted to the atmosphere corresponding to the kind of described solvent by described removing unit operation.
37. film forming methods according to any one in claim 31 ~ claim 36, is characterized in that,
Described supply step comprises described drop is dropped in described region.
38. 1 kinds of film forming methods, form semiconductive thin film being set in the mode comprising the drain electrode and source electrode that are formed thin-film transistor in the film forming region on substrate, described film forming method comprises:
First operation, the surface treatment of described film forming region is become the state with anisotropic molecular configuration by it;
Second operation, the drop of the solvent of the material containing described semiconductive thin film is supplied to described film forming region by it; And
3rd operation, it removes described solvent from the described drop being supplied to described film forming region.
39., according to film forming method according to claim 38, is characterized in that,
Described first operation comprises:
Painting process, its material molecular configuration by ultraviolet irradiation changed layeredly is coated on the surface of the described film forming region of described substrate;
Irradiation process, it, to the layer formed based on the described material be coated on the surface of described film forming region, gives anisotropy from oblique direction ultraviolet.
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| JP2012-231877 | 2012-10-19 | ||
| PCT/JP2013/076813 WO2014061451A1 (en) | 2012-10-19 | 2013-10-02 | Thin-film formation device and thin-film formation method |
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| CN106915158A (en) * | 2016-06-01 | 2017-07-04 | 广东聚华印刷显示技术有限公司 | Printing system and method |
| WO2018205735A1 (en) * | 2017-05-11 | 2018-11-15 | 京东方科技集团股份有限公司 | Display panel manufacturing method, display panel manufacturing device, and display panel |
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| JP7280787B2 (en) * | 2019-09-20 | 2023-05-24 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing equipment |
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| JP4593190B2 (en) * | 2004-07-15 | 2010-12-08 | 日東電工株式会社 | Alignment film for aligning liquid crystal material, manufacturing method thereof, alignment liquid crystal film, optical film, and image display device |
| JP4493697B2 (en) * | 2006-01-26 | 2010-06-30 | シャープ株式会社 | Method for manufacturing liquid crystal display device and liquid crystal display device |
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| EP2624285B1 (en) * | 2010-09-29 | 2020-08-26 | ULVAC, Inc. | Thin film manufacturing method and thin film manufacturing apparatus |
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| CN101203949A (en) * | 2005-06-21 | 2008-06-18 | 柯尼卡美能达控股株式会社 | Method for organic semiconductor material thin film formation and process for producing organic thin film transistor |
| CN101064362A (en) * | 2006-04-26 | 2007-10-31 | 株式会社日立制作所 | Field effect transistor and method of fabricating the same |
| JP2009295678A (en) * | 2008-06-03 | 2009-12-17 | Seiko Epson Corp | Method for manufacturing semiconductor device, method for manufacturing ferroelectric element, and method for manufacturing electronic apparatus |
| WO2011040155A1 (en) * | 2009-10-02 | 2011-04-07 | 国立大学法人大阪大学 | Method for manufacturing organic semiconductor film, and organic semiconductor film array |
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| CN106915158A (en) * | 2016-06-01 | 2017-07-04 | 广东聚华印刷显示技术有限公司 | Printing system and method |
| WO2018205735A1 (en) * | 2017-05-11 | 2018-11-15 | 京东方科技集团股份有限公司 | Display panel manufacturing method, display panel manufacturing device, and display panel |
Also Published As
| Publication number | Publication date |
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| WO2014061451A1 (en) | 2014-04-24 |
| CN107255870A (en) | 2017-10-17 |
| KR20150067191A (en) | 2015-06-17 |
| JP6119762B2 (en) | 2017-04-26 |
| CN104737279B (en) | 2017-07-04 |
| KR20180100715A (en) | 2018-09-11 |
| KR102015163B1 (en) | 2019-08-27 |
| HK1210872A1 (en) | 2016-05-06 |
| JPWO2014061451A1 (en) | 2016-09-05 |
| KR102081141B1 (en) | 2020-02-25 |
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