JP2009293114A - Electrolytic plating device and electrolytic plating method - Google Patents

Electrolytic plating device and electrolytic plating method Download PDF

Info

Publication number
JP2009293114A
JP2009293114A JP2008150698A JP2008150698A JP2009293114A JP 2009293114 A JP2009293114 A JP 2009293114A JP 2008150698 A JP2008150698 A JP 2008150698A JP 2008150698 A JP2008150698 A JP 2008150698A JP 2009293114 A JP2009293114 A JP 2009293114A
Authority
JP
Japan
Prior art keywords
shielding plate
plating
tape
opening
plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2008150698A
Other languages
Japanese (ja)
Other versions
JP5109821B2 (en
Inventor
Nobuaki Miyamoto
宣明 宮本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to JP2008150698A priority Critical patent/JP5109821B2/en
Publication of JP2009293114A publication Critical patent/JP2009293114A/en
Application granted granted Critical
Publication of JP5109821B2 publication Critical patent/JP5109821B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Electroplating Methods And Accessories (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Wire Bonding (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electrolytic plating device and an electrolytic plating method capable of simply adjusting and changing an electric current shielding structure with a shielding plate and uniformizing a plating thickness. <P>SOLUTION: In the electrolytic plating device, at least one anode 14 is vertically disposed in a plating tank 12 in which plating liquid 13 is charged, a tape-like product 3 having a conductive part 15 to be subjected to electrolytic plating is conveyed along the anode 14 while keeping a surface of the product vertical so as to face the anode 14 and the insulating shielding plate 20 having an opening is disposed between the anode 14 and the tape-like product 3, wherein the shielding plate 20 is configured by stacking a main shielding plate 18 on a sub shielding plate 19 which adjusts an opening 18a of the main shielding plate 18. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は電解めっき装置及び電解めっき方法に関し、更に詳しくは、導体部を有するテープ状製品を搬送しながら電解めっき処理を行う電解めっき装置及び電解めっき方法に関するものである。   The present invention relates to an electroplating apparatus and an electroplating method, and more particularly to an electroplating apparatus and an electroplating method for performing an electroplating process while conveying a tape-shaped product having a conductor portion.

テープ状製品、例えば、TABテープ等の半導体装置用テープキャリアにおいて、各種電解めっき技術が利用されている。具体的には、両面配線TABテープ材における両面の導体層を導通化させるためのブラインドビアホールのコンフォーマルまたはビアフィリングの銅めっき、はんだボール搭載用ビアホールヘの充填銅めっき、セミアディティブパターン銅めっき、配線パターン形成後の銅配線表面及びはんだボール搭載用ビアホールヘのニッケル、金めっきなどが挙げられる。   Various electrolytic plating techniques are used in tape-shaped products, for example, tape carriers for semiconductor devices such as TAB tape. Specifically, the copper plating of the blind via hole conformal or via filling to make the conductive layers on both sides of the double-sided wiring TAB tape material conductive, the filling copper plating into the solder ball mounting via hole, the semi-additive pattern copper plating, Examples thereof include nickel and gold plating on the copper wiring surface after the wiring pattern is formed and the solder ball mounting via hole.

リール・ツー・リール生産方式により、TABテープに金、ニッケルめっきなどの電解めっきを行う従来の電解めっき装置を、図面を用いて説明する。
図8(1)に示すように、めっき槽(めっき処理槽)12内にはめっき液13が充填され、めっき槽12内にはアノード14が垂直に配置されている。電解めっき処理されるTABテープ3は、その面を垂直にしてアノード14に対向しつつアノード14に沿って水平方向(図8の紙面に垂直な方向)にめっき槽12を貫通して搬送される。
A conventional electrolytic plating apparatus for performing electrolytic plating such as gold or nickel plating on a TAB tape by a reel-to-reel production method will be described with reference to the drawings.
As shown in FIG. 8 (1), a plating bath (plating treatment bath) 12 is filled with a plating solution 13, and an anode 14 is vertically arranged in the plating bath 12. The TAB tape 3 to be electroplated is conveyed through the plating tank 12 in the horizontal direction (direction perpendicular to the paper surface of FIG. 8) along the anode 14 while facing the anode 14 with its surface vertical. .

めっき槽12内のアノード14には整流器(図示せず)の+側が接続され、前記整流器の−側が給電ロール(図示せず)に接続される。TABテープ3の搬送時には、前記給電ロールはTABテープ3の導体部15に接触しつつ回転するように構成されており、TABテープ3がめっき槽12内に有る状態で電圧をかければ、電流Cが流れてめっき液13中のニッケルイオン等がTABテープ3の導体部(導体パターンなど)15上に電解反応で析出することになる。   A positive side of a rectifier (not shown) is connected to the anode 14 in the plating tank 12, and a negative side of the rectifier is connected to a power supply roll (not shown). When the TAB tape 3 is transported, the feeding roll is configured to rotate while being in contact with the conductor portion 15 of the TAB tape 3. If a voltage is applied while the TAB tape 3 is in the plating tank 12, the current C Flows and nickel ions or the like in the plating solution 13 are deposited on the conductor portion (conductor pattern or the like) 15 of the TAB tape 3 by an electrolytic reaction.

電解金めっきは、一般に均一電着性が高くめっき厚分布が極めて良いが、電解ニッケルめっきや電解銅めっきは、めっき厚分布が悪いため、上記アノード14からTABテープ3の導体部15への電流Cの一部を遮蔽する絶縁性の遮蔽板を用いた電流遮蔽技術が利用されている。図8(2)〜(4)及び図9(1)〜(3)に、遮蔽板17を用いた従来の電解めっき装置を示す。遮蔽板17には、TABテープ3の導体部15の幅(図中、導体部15の上下方向の寸法)に合わせた上下幅を有する開口17aが形成されている。   Electrolytic gold plating generally has a high throwing power and a very good plating thickness distribution. However, since electrolytic nickel plating and electrolytic copper plating have a poor plating thickness distribution, the current from the anode 14 to the conductor portion 15 of the TAB tape 3 is low. A current shielding technique using an insulating shielding plate that shields a part of C is used. 8 (2) to (4) and FIGS. 9 (1) to (3) show a conventional electrolytic plating apparatus using a shielding plate 17. FIG. The shielding plate 17 is formed with an opening 17a having a vertical width that matches the width of the conductor portion 15 of the TAB tape 3 (the vertical dimension of the conductor portion 15 in the figure).

なお、関連する技術として、対向配置の基板と陽極との間に遮蔽板(多孔板)を配置し、基板の中央部と周囲部とにおける電流密度が均一になるように、中央部と周囲部との孔部の面積を異ならせた多孔の遮蔽板を用いた電解めっき方法(特許文献1参照)、及び、挟持部材(クリップ)に懸垂保持されるプリント配線板の幅寸法に応じて、プリント配線板の両側面に近接して配置される2つの遮蔽板(金属バー)との間、及び2つの挟持部材(クリップ)との間の距離を調整可能な位置調整機構(ラックとピニオン)を備えたプリント配線板めっき治具(特許文献2参照)が知られている。   In addition, as a related technique, a central plate and a peripheral portion are arranged so that a current density in the central portion and the peripheral portion of the substrate is uniform by arranging a shielding plate (perforated plate) between the substrate and the anode disposed opposite to each other. According to the electrolytic plating method using a porous shielding plate with different hole areas (see Patent Document 1) and the width dimension of the printed wiring board suspended and held by the clamping member (clip) Position adjustment mechanism (rack and pinion) that can adjust the distance between two shielding plates (metal bars) arranged close to both sides of the wiring board and between the two clamping members (clips) A printed wiring board plating jig provided (see Patent Document 2) is known.

特開2002−54000号公報JP 2002-54000 A 特開2005−42170号公報JP 2005-42170 A

ところで、めっき厚分布はめっき条件によっても変わるが、特に電流密度はめっき厚分布に及ぼす影響が大きい。一般的には低い電流密度で時間をかけてめっきを行なうことでめっき厚分布は良くなる。また、めっきの金属種と目標とするめっき厚さが同じであれば、電流密度とめっき所要時間は反比例の関係にある。したがって、めっき厚分布の改善のために電流密度を低くすれば、所要時間が長くなり生産性は低下する。特にTABテープのようなリール・ツー・リール式生産方式の場合、めっき工程の搬送速度を遅くしなければならず、生産性にダイレクトに影響を及ぼす。   By the way, although the plating thickness distribution varies depending on the plating conditions, the current density has a great influence on the plating thickness distribution. In general, the plating thickness distribution is improved by performing plating at a low current density over time. Moreover, if the metal type of plating and the target plating thickness are the same, the current density and the time required for plating are in an inversely proportional relationship. Therefore, if the current density is lowered to improve the plating thickness distribution, the required time becomes longer and the productivity decreases. Particularly in the case of a reel-to-reel production method such as TAB tape, the conveying speed of the plating process must be slowed, which directly affects productivity.

生産性低下の問題を解決するためには、電流密度を維持しためっき方法でなければならず、上述した遮蔽板17を用いた電流遮蔽技術が利用される場合が多い。次に、遮蔽板17を用いた電流遮蔽の問題点を述べる。   In order to solve the problem of lowering productivity, the plating method must maintain the current density, and the current shielding technique using the shielding plate 17 described above is often used. Next, problems of current shielding using the shielding plate 17 will be described.

図8、図9は、全てTABテープ3の搬送方向に垂直な断面図であり、電解めっき時の電流分布状況を概略的に示している。
遮蔽板が無い図8(1)の場合、電解めっき時の電流(電流線)Cは、TABテープ3の導体部15の端部には、外側から回り込んで到達する電流成分があるため、特にTABテープ3の端部ほどめっき厚が厚くなり、中央部付近は薄くなる傾向にある。このため、TABテープ3の端部への電流集中を防ぎ、めっき厚を抑えるため、遮蔽板17等を配置した電流遮蔽技術が用いられる。
FIGS. 8 and 9 are all cross-sectional views perpendicular to the transport direction of the TAB tape 3, and schematically show the current distribution during electrolytic plating.
In the case of FIG. 8 (1) without a shielding plate, the current (current line) C during electroplating has a current component that wraps around and reaches the end of the conductor portion 15 of the TAB tape 3, In particular, the end portion of the TAB tape 3 has a thicker plating thickness, and the central portion tends to be thinner. For this reason, in order to prevent electric current concentration to the edge part of the TAB tape 3, and to suppress plating thickness, the current shielding technique which has arrange | positioned the shielding board 17 grade | etc., Is used.

図8(2)のように幅(上下幅)が狭い遮蔽板17の場合、電流Cの一部が遮蔽板17の上下を回り込んで導体部15の端部に到達し、導体部15の端部のめっき厚が厚くなるので、図8(3)のように、遮蔽板17の下側はめっき槽12の底面と接し、上側はめっき液13の液面上に出るのがよい。
また、図8(4)のように遮蔽板17の厚さが薄いと、アノード14からカソードとなる導体部15ヘ向かう電流Cのうち、遮蔽板17の開口17aの上下端部付近の回り込み電流成分を遮蔽しにくく、TABテープ3の端部付近のめっき厚が厚くなる。この場合には、図8(3)のように、遮蔽板17の厚さをある程度厚くすることで、めっき厚分布はかなり改善する。
In the case of the shielding plate 17 having a narrow width (vertical width) as shown in FIG. 8B, a part of the current C wraps around the shielding plate 17 and reaches the end of the conductor portion 15. Since the plating thickness at the end is increased, it is preferable that the lower side of the shielding plate 17 is in contact with the bottom surface of the plating tank 12 and the upper side is exposed on the surface of the plating solution 13 as shown in FIG.
When the thickness of the shielding plate 17 is small as shown in FIG. 8 (4), the sneak current near the upper and lower ends of the opening 17a of the shielding plate 17 out of the current C from the anode 14 to the conductor portion 15 serving as the cathode. It is difficult to shield the components, and the plating thickness near the end of the TAB tape 3 is increased. In this case, as shown in FIG. 8C, the plating thickness distribution is considerably improved by increasing the thickness of the shielding plate 17 to some extent.

しかし、図9(1)のように、TABテープ3の導体部15が広幅、大面積になるほど、めっき厚分布が悪くなり、めっき厚均一化のための遮蔽板17による電流遮蔽技術の難易度は高くなる。
また、TABテープ3が多列取り、例えば、2列取り(図9(2))、3列取り(図9(3))のTABテープ3の場合には、遮蔽部材が無い遮蔽板17の開口17aの内側では、各列間の導体部15の端部に電流が集中し、この付近のめっき厚が厚くなってしまう。
However, as shown in FIG. 9 (1), as the conductor portion 15 of the TAB tape 3 becomes wider and larger in area, the plating thickness distribution becomes worse, and the difficulty of the current shielding technique by the shielding plate 17 for uniform plating thickness. Becomes higher.
In the case of the TAB tape 3 having multiple rows, for example, two rows (FIG. 9 (2)) and 3 rows (FIG. 9 (3)), the shielding plate 17 having no shielding member is used. Inside the openings 17a, current concentrates on the end portions of the conductor portions 15 between the respective rows, and the plating thickness in the vicinity thereof is increased.

このように、遮蔽板による電流遮蔽技術はめっき厚分布の改善に有効な手段であるが、広幅や多列取りなどのテープ状製品の品種や、要求されるめっき厚規格範囲に応じて、更なる調整・対応が必要となる。しかしながら、その都度、めっき槽12内の遮蔽板17をそっくり交換することは非常に手間が掛かり、結果として電流密度を下げるなどの対応になってしまう場合が多いのが現状である。   As described above, the current shielding technique using the shielding plate is an effective means for improving the plating thickness distribution. However, depending on the type of tape-shaped products such as wide and multi-row, and the required plating thickness standard range, Adjustments and responses are required. However, in each case, it is very troublesome to completely replace the shielding plate 17 in the plating tank 12, and as a result, the current density is often reduced.

本発明は、上記課題を解決し、遮蔽板による電流遮蔽構造を簡易に調整・変更でき、めっき厚の均一化が図れる電解めっき装置及び電解めっき方法を提供することにある。   An object of the present invention is to provide an electrolytic plating apparatus and an electrolytic plating method capable of solving the above-described problems, easily adjusting / changing a current shielding structure by a shielding plate, and achieving uniform plating thickness.

上記課題を解決するために、本発明は次のように構成されている。   In order to solve the above problems, the present invention is configured as follows.

本発明の第1の態様は、めっき液が充填されるめっき処理槽内に少なくとも一個以上のアノードが垂直に設けられ、電解めっき処理される導体部を有するテープ状製品が、その面を垂直にして前記アノードに対向しつつ前記アノードに沿って搬送され、前記アノードと前記テープ状製品との間に、開口を有する絶縁性の遮蔽板を設けた電解めっき装置において、前記遮蔽板は、主遮蔽板と、当該主遮蔽板の開口を調整する従遮蔽板とを重ね合わせて構成されていることを特徴とする電解めっき装置である。   According to a first aspect of the present invention, there is provided a tape-shaped product in which at least one anode is provided vertically in a plating treatment tank filled with a plating solution and has a conductor portion to be subjected to electrolytic plating treatment, with its surface vertical. In the electroplating apparatus provided with an insulating shield plate having an opening between the anode and the tape-like product, the shield plate is a main shield. An electroplating apparatus characterized in that a plate and a secondary shield plate for adjusting the opening of the main shield plate are overlapped.

本発明の第2の態様は、第1の態様の電解めっき装置において、前記従遮蔽板は、前記めっき処理槽から抜き差し可能に設けられていることを特徴とする。   According to a second aspect of the present invention, in the electroplating apparatus according to the first aspect, the sub shield plate is provided so as to be removable from the plating tank.

本発明の第3の態様は、第1の態様又は第2の態様の電解めっき装置において、前記従遮蔽板は、前記主遮蔽板の前記テープ状製品側に設置されていることを特徴とする。   According to a third aspect of the present invention, in the electrolytic plating apparatus according to the first aspect or the second aspect, the secondary shielding plate is installed on the tape-shaped product side of the main shielding plate. .

本発明の第4の態様は、第1〜第3の態様のいずれかの電解めっき装置おいて、多列の前記導体部を有する前記テープ状製品に対し、前記従遮蔽板は、前記テープ状製品の各列の前記導体部に対応した開口を有することを特徴とする。   According to a fourth aspect of the present invention, in the electroplating apparatus according to any one of the first to third aspects, the sub-shielding plate is the tape-shaped product with respect to the tape-shaped product having the multiple rows of the conductor portions. It has the opening corresponding to the said conductor part of each row | line | column of a product, It is characterized by the above-mentioned.

本発明の第5の態様は、第1〜第4の態様のいずれかの電解めっき装置において、前記従遮蔽板の開口の上下幅を、前記テープ状製品の導体部の幅よりも狭く設定したことを特徴とする。   According to a fifth aspect of the present invention, in the electroplating apparatus according to any one of the first to fourth aspects, the vertical width of the opening of the secondary shielding plate is set to be narrower than the width of the conductor portion of the tape-shaped product. It is characterized by that.

本発明の第6の態様は、第1〜第5の態様のいずれかの電解めっき装置において、前記従遮蔽板の開口の上下の端部に、前記主遮蔽板の開口の内側へと突出される突起遮蔽部が、前記上下の端部に沿って複数形成されていることを特徴とする。   According to a sixth aspect of the present invention, in the electrolytic plating apparatus according to any one of the first to fifth aspects, the upper and lower end portions of the opening of the secondary shielding plate are projected to the inside of the opening of the main shielding plate. A plurality of protrusion shielding portions are formed along the upper and lower end portions.

本発明の第7の態様は、第1〜第6の態様のいずれかの電解めっき装置において、前記主遮蔽板は、その下端部が前記めっき処理槽内の底面上に設置され、その上端部がめっき液面から突き出て設けられていることを特徴とする。   According to a seventh aspect of the present invention, in the electroplating apparatus according to any one of the first to sixth aspects, the main shielding plate has a lower end portion installed on the bottom surface in the plating tank, and an upper end portion thereof. Is provided so as to protrude from the plating solution surface.

本発明の第8の態様は、第1〜第7の態様のいずれかの電解めっき装置において、前記主遮蔽板の厚みが20〜50mmであり、前記従遮蔽板の厚みが5〜10mmであることを特徴とする。   According to an eighth aspect of the present invention, in the electrolytic plating apparatus according to any one of the first to seventh aspects, the main shielding plate has a thickness of 20 to 50 mm, and the sub-shielding plate has a thickness of 5 to 10 mm. It is characterized by that.

本発明の第9の態様は、めっき液が充填されためっき処理槽内に少なくとも一個以上のアノードを垂直に設け、前記アノードの面に対向させて開口を有する絶縁性の遮蔽板を設け、前記アノードとは反対側の前記遮蔽板の近傍に、めっき処理される導体部を有するテープ状製品を搬送して、前記導体部をめっき処理する電解めっき方法において、前記遮蔽板として、主遮蔽板と当該主遮蔽板の開口を調整する従遮蔽板とを重ね合わせた遮蔽板を用いるようにしたことを特徴とする電解めっき方法である。   In a ninth aspect of the present invention, at least one or more anodes are provided vertically in a plating tank filled with a plating solution, an insulating shielding plate having an opening facing the surface of the anode is provided, In the electroplating method in which a tape-shaped product having a conductor portion to be plated is transported in the vicinity of the shield plate on the side opposite to the anode and the conductor portion is plated, the main shield plate is used as the shield plate. The electrolytic plating method is characterized in that a shielding plate on which a secondary shielding plate for adjusting the opening of the main shielding plate is overlapped is used.

本発明の第10の態様は、第9の態様の電解めっき方法において、前記遮蔽板を用いて電解めっきされた前記テープ状製品の導体部のめっき厚分布の結果に基づいて、前記電解めっきに用いた従遮蔽板を、当該従遮蔽板とは異なる開口の上下幅または開口形状を有する別の従遮蔽板に変更して、前記めっき膜分布を調整するようにしたことを特徴とする。   According to a tenth aspect of the present invention, in the electroplating method according to the ninth aspect, the electroplating is performed based on a result of a plating thickness distribution of a conductor portion of the tape-shaped product electroplated using the shielding plate. The sub shield plate used is changed to another sub shield plate having a vertical width or opening shape different from that of the sub shield plate to adjust the plating film distribution.

本発明によれば、遮蔽板による電流遮蔽構造を簡易に調整・変更でき、めっき厚の均一なテープ状製品が得られる。   According to the present invention, the current shielding structure by the shielding plate can be easily adjusted and changed, and a tape-like product having a uniform plating thickness can be obtained.

以下、本発明に係る電解めっき装置及び電解めっき方法の実施形態を図面を用いて説明する。   Hereinafter, embodiments of an electrolytic plating apparatus and an electrolytic plating method according to the present invention will be described with reference to the drawings.

図1には、実施形態の電解めっきに用いられるリール・ツー・リール生産方式による電解めっき装置の一例として、テープ状製品であるTABテープ3にニッケルめっき及び金めっき処理を施す電解めっき装置の概略的な平面配置を示す。   FIG. 1 shows an outline of an electroplating apparatus that performs nickel plating and gold plating on a TAB tape 3 that is a tape-like product as an example of an electroplating apparatus using a reel-to-reel production method used for electroplating according to the embodiment. A typical planar arrangement is shown.

リール・ツー・リール工程では、図1に示すように、巻き出し部1にセットしたリール2から電解めっき処理されるテープ状製品であるTABテープ3を繰り出し、巻き取り部9のリール2に電解めっきされたTABテープ3を巻き取る。巻き出し部1のリール2と巻き取り部9のリール2との間のTABテープ3の搬送経路(パスライン)には、前処理槽4と、ニッケルめっき槽5と、金めっき槽6と、後洗浄槽7と、乾燥槽8とが設置されている。ニッケルめっき槽5および金めっき槽6の前後には、給電ロール10がそれぞれ設けられている。また、ニッケルめっき槽5及び金めっき槽6内には、アノードが設置される。   In the reel-to-reel process, as shown in FIG. 1, the TAB tape 3, which is a tape-like product to be electroplated, is unwound from the reel 2 set in the unwinding section 1, and the reel 2 of the winding section 9 is electrolyzed. The plated TAB tape 3 is wound up. The transport path (pass line) of the TAB tape 3 between the reel 2 of the unwinding unit 1 and the reel 2 of the winding unit 9 includes a pretreatment tank 4, a nickel plating tank 5, a gold plating tank 6, A post-cleaning tank 7 and a drying tank 8 are installed. Power feeding rolls 10 are respectively provided before and after the nickel plating tank 5 and the gold plating tank 6. An anode is installed in the nickel plating tank 5 and the gold plating tank 6.

図2(a)は給電ロール10とTABテープ3との位置関係を示す斜視図であり、図2(b)は図2(a)のB−B断面図である。図2に示すように、給電ロール10は回転自在に設けられ、TABテープ3の搬送時には給電ロール10が回転してTABテープ3の導体部である給電パターン11と接触するよう構成されている。
電気回路的には、図示省略の整流器(めっき電源)の+側がめっき槽5、6内のアノードと接続され、−側が給電ロール10と接続された回路となるので、TABテープ3の導体部がめっき槽5、6内に有る状態で電圧をかければ、電流が流れてめっき液中のニッケルイオン等がTABテープ3の導体パターン15、給電パターン11等の導体部上に電解反応で析出することになる。
2A is a perspective view showing a positional relationship between the power supply roll 10 and the TAB tape 3, and FIG. 2B is a cross-sectional view taken along line BB in FIG. 2A. As shown in FIG. 2, the power supply roll 10 is rotatably provided so that the power supply roll 10 rotates and contacts the power supply pattern 11 that is a conductor portion of the TAB tape 3 when the TAB tape 3 is conveyed.
In terms of electrical circuit, since the rectifier (plating power source) (not shown) is connected to the anode in the plating tanks 5 and 6 and the negative side is connected to the power supply roll 10, the conductor portion of the TAB tape 3 is If a voltage is applied in the state of the plating tanks 5 and 6, current flows and nickel ions in the plating solution are deposited on the conductor portions of the TAB tape 3 such as the conductor pattern 15 and the power feeding pattern 11 by electrolytic reaction. become.

(第1の実施形態)
図3は、1列取りのTABテープ3に適した遮蔽板20を備えた第1の実施形態の電解めっき装置を示す。図3(a)はTABテープ3の搬送方向に垂直なめっき槽(めっき処理槽)12の断面図であり、図3(b)は従遮蔽板19の正面図であり、図3(c)は遮蔽板20とTABテープ3との配置を示すTABテープ3の搬送方向に垂直な断面図である。
(First embodiment)
FIG. 3 shows the electroplating apparatus of the first embodiment provided with a shielding plate 20 suitable for a single-row TAB tape 3. 3A is a cross-sectional view of the plating tank (plating tank) 12 perpendicular to the conveying direction of the TAB tape 3, and FIG. 3B is a front view of the sub-shield 19 and FIG. These are sectional views perpendicular to the transport direction of the TAB tape 3 showing the arrangement of the shielding plate 20 and the TAB tape 3.

図3(a)に示すように、めっき槽12内にはめっき液13が充填され、めっき槽12内にはアノード14が垂直に配置されている。電解めっき処理されるTABテープ3は、その面を垂直にしてアノード14に対向しつつアノード14に沿って水平方向(図3の紙面に垂直な方向)にめっき槽12を貫通して搬送される。
めっき槽12内のアノード14には整流器(めっき電源)の+側が接続され、前記整流器の−側が給電ロールに接続される。従って、TABテープ3がめっき槽12内に有る状態で電圧を加えれば、電流(電流線)Cが流れてめっき液13中のニッケルイオン等がTABテープ3の導体部(導体パターンなど)15上に電解反応で析出することになる。
なお、アノード14の構造は、ニッケルめっきの場合、チタンバスケットにニッケルチップを充填させ、チタンバスケット全体を液透過性のアノードバッグで包む構造が一般的である。金めっきの場合はチタン板またはチタン板を加工したメッシュ状の板の表面を白金めっきした不溶性タイプを使用する場合が多い。
As shown in FIG. 3A, the plating tank 12 is filled with a plating solution 13, and the anode 14 is vertically arranged in the plating tank 12. The TAB tape 3 to be electroplated is conveyed through the plating tank 12 in the horizontal direction (direction perpendicular to the paper surface of FIG. 3) along the anode 14 while facing the anode 14 with the surface thereof vertical. .
A positive side of a rectifier (plating power source) is connected to the anode 14 in the plating tank 12, and a negative side of the rectifier is connected to a power supply roll. Therefore, if a voltage is applied in a state where the TAB tape 3 is in the plating tank 12, a current (current line) C flows and nickel ions or the like in the plating solution 13 are on the conductor portion (conductor pattern, etc.) 15 of the TAB tape 3. It will be deposited by electrolytic reaction.
In the case of nickel plating, the structure of the anode 14 is generally a structure in which a titanium basket is filled with nickel chips and the entire titanium basket is wrapped with a liquid-permeable anode bag. In the case of gold plating, an insoluble type in which the surface of a titanium plate or a mesh-like plate processed from a titanium plate is platinum-plated is often used.

アノード14とTABテープ3との間には、前記電流Cの一部を遮断する絶縁性の遮蔽板20が設けられる。遮蔽板20は、TABテープ3の搬送経路(パスライン)に近接させて設置される。遮蔽板20は、図示のように、主遮蔽板18と、主遮蔽板18の開口18aを調整する開口19aを有する従遮蔽板19とを重ね合わせたものである。この第1
の実施形態では、主遮蔽板18の開口18aも従遮蔽板19の開口19aも、図示のように、TABテープ3の導体部15の幅寸法に合わせた上下幅を有する長方形状である。
Between the anode 14 and the TAB tape 3, an insulating shielding plate 20 that blocks a part of the current C is provided. The shielding plate 20 is installed close to the transport path (pass line) of the TAB tape 3. As shown in the figure, the shielding plate 20 is obtained by superimposing a main shielding plate 18 and a secondary shielding plate 19 having an opening 19a for adjusting the opening 18a of the main shielding plate 18. This first
In this embodiment, both the opening 18a of the main shielding plate 18 and the opening 19a of the secondary shielding plate 19 have a rectangular shape having a vertical width corresponding to the width of the conductor portion 15 of the TAB tape 3 as shown in the figure.

主遮蔽板18は、基本的な設定としては、図3に示すように、TABテープ3の導体部15の幅分(めっきエリアの幅分)に合わせた幅(上下幅)の開口18aとし、開口18aの上下部分で電流Cを遮蔽する構造とする。主遮蔽板18の下側はめっき槽12の底面上に設置し、主遮蔽板18の上側はめっき液13面から出るようにするのがよい。
主遮蔽板18の材料には、絶縁性、強度、耐薬品性を考慮し、塩化ビニル樹脂などを用いるのが良い。主遮蔽板18の厚さは20〜50mm程度が望ましい。主遮蔽板の目的からすれば、厚さ(奥行き)が20mm以上確保できれば良いと考えられるが、例えば、開ロ18aを囲む外周部分を庇状に突出させて形成することで電流遮蔽が確保できれば、主遮蔽板18の厚さを、より薄くしても構わない。主遮蔽板18とテープ状製品の間に従遮蔽板19を挿入するため、それを見込んだ距離分、主遮蔽板18をテープ状製品のパスラインから離した位置に設置する。
As shown in FIG. 3, the main shielding plate 18 is basically an opening 18a having a width (vertical width) that matches the width of the conductor portion 15 of the TAB tape 3 (the width of the plating area). The current C is shielded at the upper and lower portions of the opening 18a. The lower side of the main shielding plate 18 is preferably installed on the bottom surface of the plating tank 12, and the upper side of the main shielding plate 18 is preferably protruded from the surface of the plating solution 13.
As a material of the main shielding plate 18, it is preferable to use vinyl chloride resin or the like in consideration of insulation, strength, and chemical resistance. The thickness of the main shielding plate 18 is desirably about 20 to 50 mm. For the purpose of the main shielding plate, it is considered that the thickness (depth) can be ensured to be 20 mm or more. For example, if current shielding can be ensured by forming the outer peripheral portion surrounding the opening 18a in a bowl shape. The main shielding plate 18 may be made thinner. In order to insert the secondary shielding plate 19 between the main shielding plate 18 and the tape-like product, the main shielding plate 18 is installed at a position away from the pass line of the tape-like product by the distance expected.

従遮蔽板19は、図示のように、主遮蔽板18に沿わせて、主遮蔽板18のTABテープ3のパスライン側に設置される。従遮蔽板19は、めっき槽12の上方から抜き差し可能に設けられており、TABテープ3等の導体幅に合った適切な開口19aを有する従遮蔽板19を選定して使用する。
従遮蔽板19の開ロ19aは、主遮蔽板18と同様に、テープ状製品であるTABテープ3の導体部15の幅(めっきエリアの幅)に合せた開口幅を基本とする。
As shown in the figure, the secondary shield plate 19 is installed on the pass line side of the TAB tape 3 of the primary shield plate 18 along the primary shield plate 18. The secondary shield plate 19 is provided so as to be detachable from above the plating tank 12, and the secondary shield plate 19 having an appropriate opening 19a matching the conductor width of the TAB tape 3 or the like is selected and used.
The opening 19a of the sub shield 19 is based on an opening width that matches the width of the conductor portion 15 (the width of the plating area) of the TAB tape 3 that is a tape-like product, similarly to the main shield 18.

しかしながら、めっき厚分布の結果、例えば、導体部15の端部におけるめっき厚が厚い場合には、従遮蔽板19の開ロ19aの幅を、若干導体部15の幅よりも狭くして、従遮蔽板19の遮蔽部分がテープ状製品の導体部15部分に被さるようにして調整するのが良い。
また、テープ状製品であるTABテープ3等の導体部の幅が品種毎に若干異なることが予想される場合には、主遮蔽板18の開口18aの上下幅は、導体部の幅が最大である品種に合せておき、品種毎に若干異なる導体部の幅にあった開口19aを有する従遮蔽板19を品種毎に変更して用いるのが良い。
However, as a result of the plating thickness distribution, for example, when the plating thickness at the end of the conductor portion 15 is large, the width of the opening 19a of the secondary shielding plate 19 is slightly narrower than the width of the conductor portion 15 to It is preferable to adjust the shielding portion of the shielding plate 19 so as to cover the conductor portion 15 portion of the tape-like product.
When the width of the conductor part of the TAB tape 3 or the like which is a tape-like product is expected to be slightly different for each product type, the width of the conductor part is the maximum width of the opening 18a of the main shielding plate 18. In accordance with a certain type, it is preferable to use a sub shield plate 19 having an opening 19a having a slightly different conductor width for each type.

主遮蔽板18は基本的にめっき槽12内に固定的に設けられ、一方、従遮蔽板19はテープ状製品の品種切り替えなどに際して容易に交換可能に設けられる。従って、従遮蔽板19は、簡単にめっき槽12の上側などから抜き挿しができる構造とするのがよい。また、従遮蔽板19は、加工や製作しやすい材質が望ましいので、厚さが5〜l0mm程度の塩化ビニル製樹脂のものが好ましい。なお、従遮蔽板19の抜き差しを容易とするために、従遮蔽板19を案内し且つ保持するためのガイド枠(ガイド溝)ないし挿入枠(挿入溝)などを、めっき槽12或いは主遮蔽板18に設けるようにするのが良い。   The main shielding plate 18 is basically fixedly provided in the plating tank 12, while the sub-shielding plate 19 is provided so as to be easily replaceable when changing the product type of the tape-like product. Therefore, it is preferable that the secondary shield plate 19 has a structure that can be easily inserted and removed from the upper side of the plating tank 12 or the like. The secondary shield plate 19 is preferably made of a vinyl chloride resin having a thickness of about 5 to 10 mm because a material that can be easily processed and manufactured is desirable. In order to facilitate the insertion / removal of the secondary shielding plate 19, a guide frame (guide groove) or an insertion frame (insertion groove) for guiding and holding the secondary shielding plate 19 is used as the plating tank 12 or the primary shielding plate. 18 should be provided.

従遮蔽板19を設置した後の状態は、電流遮蔽性を考慮し、テープ状製品のパスラインから1〜5mm程度離した位置に挿入できるように設計しておく。遮蔽板20はテープ状製品に近づけるほどその開口形状に近い電流分布が得られる。しかし、接触すると擦りキズの原因となるので僅かに離す必要がある。理想的には1〜2mm程度が良いが、5mm程度までは効果が高い。
遮蔽板20の厚みは30mm以上あれば、アノード14からカソードとなるTABテープ3の導体部15ヘ向かう回り込み電流の遮蔽効果が高い。しかし、厚すぎても取り扱いが難しくなるから、主遮蔽板18と従遮蔽板19の厚みの合計が30〜60mm程度になるのが望ましい。従遮蔽板19の厚みを5〜10mmとすれば、主遮蔽板18の厚みは20〜50mm程度が良い。なお、主遮蔽板18のアノード14側にも更に従遮蔽板を設置するようにしても良い。
The state after the secondary shield plate 19 is installed is designed so that it can be inserted at a position about 1 to 5 mm away from the pass line of the tape-like product in consideration of current shielding. The closer the shielding plate 20 is to the tape-like product, the more current distribution that is closer to the opening shape is obtained. However, if it comes into contact, it may cause scratches and scratches, so it needs to be slightly separated. Ideally, about 1-2 mm is good, but the effect is high up to about 5 mm.
If the thickness of the shielding plate 20 is 30 mm or more, the shielding effect of the sneak current from the anode 14 toward the conductor portion 15 of the TAB tape 3 serving as the cathode is high. However, since it becomes difficult to handle even if it is too thick, it is desirable that the total thickness of the main shielding plate 18 and the secondary shielding plate 19 is about 30 to 60 mm. If the thickness of the secondary shielding plate 19 is 5 to 10 mm, the thickness of the main shielding plate 18 is preferably about 20 to 50 mm. A secondary shield plate may be further installed on the anode 14 side of the main shield plate 18.

(第2、第3の実施形態)
図4には2列取りのTABテープ3に適した遮蔽板を備えた第2の実施形態の電解めっき装置を、また、図5には3列取りのTABテープ3に適した遮蔽板を備えた第3の実施形態の電解めっき装置を示す。
(Second and third embodiments)
FIG. 4 shows the electroplating apparatus of the second embodiment provided with a shielding plate suitable for the two-row TAB tape 3, and FIG. 5 shows a shielding plate suitable for the three-row TAB tape 3. 4 shows an electrolytic plating apparatus according to a third embodiment.

第2の実施形態の電解めっき装置における遮蔽板は、図4に示すように、上記第1の実施形態と同様に、主遮蔽板21と従遮蔽板22とが重ね合わされて構成される。主遮蔽板21は、図示のように、2列のTABテープ3の導体部15の幅分(めっきエリアの幅分)に合わせた開口21aを有する。また、従遮蔽板22は、2列の各導体部15の幅に合わせた開口幅を有する2つの開口22a、22aを有し、開口22aと開口22aとの間には細長い帯状の遮蔽部22bが形成されている。   As shown in FIG. 4, the shielding plate in the electrolytic plating apparatus of the second embodiment is configured by superimposing a main shielding plate 21 and a secondary shielding plate 22 as in the first embodiment. As shown in the figure, the main shielding plate 21 has an opening 21a that matches the width of the conductor portions 15 of the two rows of TAB tapes 3 (the width of the plating area). The secondary shielding plate 22 has two openings 22a and 22a having opening widths corresponding to the widths of the conductors 15 in two rows, and an elongated strip-shaped shielding part 22b between the openings 22a and 22a. Is formed.

第3の実施形態の電解めっき装置における遮蔽板は、図5に示すように、上記第1の実施形態と同様に、主遮蔽板23と従遮蔽板24とが重ね合わされて構成される。主遮蔽板23は、図示のように、3列のTABテープ3の導体部15の幅分(めっきエリアの幅分)に合わせた開口23aを有する。また、従遮蔽板24は、3列の各導体部15の幅に合わせた開口幅を有する3つの開口24a、24a、24aを有し、各開口24aの間には、細長い帯状の遮蔽部24bが形成されている。   As shown in FIG. 5, the shielding plate in the electrolytic plating apparatus of the third embodiment is configured by superimposing a main shielding plate 23 and a secondary shielding plate 24 as in the first embodiment. As shown in the figure, the main shielding plate 23 has openings 23 a that match the width of the conductor portions 15 of the three rows of TAB tapes 3 (the width of the plating area). The secondary shield plate 24 has three openings 24a, 24a, 24a having opening widths corresponding to the widths of the three rows of the conductor portions 15, and an elongated strip-shaped shield portion 24b between the openings 24a. Is formed.

多列取りのTABテープ3に対して、上述した図9(2)、(3)に示すような開口17a内に遮蔽部材が無い遮蔽板17を用いた場合、各列間の導体部15の端部に電流Cが集中し、この付近のめっき厚が厚くなってしまう。
これに対し、図4、図5に示すように、従遮蔽板22の開口22a、22aの間、従遮蔽板24の各開口24aの間には、遮蔽部22b、遮蔽部24bが設けられているので、各列間の導体部15の端部に電流Cが集中するのを防止でき、めっき厚分布を均一化できる。
When the shielding plate 17 having no shielding member in the opening 17a as shown in FIGS. 9 (2) and 9 (3) is used for the multi-row TAB tape 3, the conductor portions 15 between the rows are arranged. The current C is concentrated at the end portion, and the plating thickness in the vicinity is increased.
On the other hand, as shown in FIGS. 4 and 5, a shielding portion 22 b and a shielding portion 24 b are provided between the openings 22 a and 22 a of the secondary shielding plate 22 and between the openings 24 a of the secondary shielding plate 24. Therefore, the current C can be prevented from concentrating on the end portions of the conductor portions 15 between the columns, and the plating thickness distribution can be made uniform.

2列(図4)、3列(図5)と多列取りの場合も、1列取り(図3)の場合と同様に、従遮蔽板22、24の開口22a、24aは、各列の導体部15の幅に合せた開口とする。しかし、めっき厚分布の結果次第では若干導体部15の部分に被さる幅としても良い。   In the case of two rows (FIG. 4), three rows (FIG. 5) and multi-row arrangement, the openings 22a and 24a of the secondary shielding plates 22 and 24 are provided in each row as in the case of one row (FIG. 3). The opening is adapted to the width of the conductor portion 15. However, depending on the result of the plating thickness distribution, the width may slightly cover the conductor portion 15.

遮蔽板の開口幅、開口形状を導体幅に合せた電流遮蔽方法により、高いめっき厚分布の均一化効果が得られる。しかし実際には、導体パターンの形状等の違いによりめっき厚分布は変化する。ある一つの従遮蔽板を使用してめっきした際のめっき厚分布が満足できないレベルであれば、めっき厚を詳細に解析した上で、従遮蔽板の開口幅または開口形状を調整・変更すると良い。   By the current shielding method in which the opening width and opening shape of the shielding plate are matched to the conductor width, a high plating thickness distribution uniform effect can be obtained. However, in practice, the plating thickness distribution varies depending on the difference in the shape of the conductor pattern. If the plating thickness distribution when plating using a single secondary shielding plate is not satisfactory, it is recommended to adjust or change the opening width or opening shape of the secondary shielding plate after analyzing the plating thickness in detail. .

例えば、広幅品の導体部の端部や多列品における各列の導体部の端部が厚い結果を得た場合には、主遮蔽板の開口の内側へと突出される突起遮蔽部を、従遮蔽板の開口の上下の端部に、これに沿って複数形成すると良い。
(第4の実施形態)
具体的には、図3に示す1列取りのTABテープ3に適した第1の実施形態の電解めっき装置にあっては、従遮蔽板19に替えて、図6に示すような従遮蔽板25を用いる。従遮蔽板25の開口25aの上下端部には、くさび形状(三角形状)の複数の突起遮蔽部25cが等間隔に形成されている。図6(a)は従遮蔽板25の正面図、(b)は(a)のA−A線の位置をTABテープ3の導体部15が通過する時の断面図、(c)は(a)のB−B線の位置をTABテープ3の導体部15が通過する時の断面図である。
(第5の実施形態)
また、図4に示す2列取りのTABテープ3に適した第2の実施形態の電解めっき装置
にあっては、従遮蔽板22に替えて、図7に示すような従遮蔽板26を用いる。従遮蔽板26の2つの開口26a、26aの上下端部には、くさび形状(三角形状)の複数の突起遮蔽部26cが等間隔に形成されている。図7(a)は従遮蔽板26の正面図、(b)は(a)のA−A線の位置をTABテープ3の導体部15が通過する時の断面図、(c)は(a)のB−B線の位置をTABテープ3の導体部15が通過する時の断面図である。
For example, in the case where the end of the conductor part of the wide product or the end of the conductor part of each row in the multi-row product obtained a thick result, the projection shielding part protruding to the inside of the opening of the main shielding plate, It is preferable to form a plurality along the upper and lower end portions of the opening of the sub shielding plate.
(Fourth embodiment)
Specifically, in the electroplating apparatus of the first embodiment suitable for the one-row TAB tape 3 shown in FIG. 3, the secondary shield plate as shown in FIG. 25 is used. A plurality of wedge-shaped (triangular) projection shielding portions 25 c are formed at equal intervals on the upper and lower ends of the opening 25 a of the sub-shielding plate 25. 6A is a front view of the secondary shield plate 25, FIG. 6B is a sectional view when the conductor portion 15 of the TAB tape 3 passes through the position of the AA line of FIG. 6A, and FIG. ) Is a cross-sectional view when the conductor portion 15 of the TAB tape 3 passes through the position of the BB line.
(Fifth embodiment)
Further, in the electroplating apparatus of the second embodiment suitable for the two-row TAB tape 3 shown in FIG. 4, a secondary shield plate 26 as shown in FIG. 7 is used instead of the secondary shield plate 22. . A plurality of wedge-shaped (triangular) projection shielding portions 26c are formed at equal intervals on the upper and lower ends of the two openings 26a, 26a of the sub-shielding plate 26. 7A is a front view of the secondary shield plate 26, FIG. 7B is a sectional view when the conductor portion 15 of the TAB tape 3 passes through the position of the AA line of FIG. 7A, and FIG. ) Is a cross-sectional view when the conductor portion 15 of the TAB tape 3 passes through the position of the BB line.

従遮蔽板25、26の開口25a、26aの端部付近の電流Cを部分的に遮蔽することで、導体部15の端部付近のめっき厚を抑制可能である。図6,7の従遮蔽板25、26の開口25a、26aは、A−A線付近の位置をTABテープ3の導体部15が通過する際には、導体幅と同じ幅であるが、B−B線付近の位置をTABテープ3の導体部15が通過する際には、導体部15の端部が突起遮蔽部25c、26cにより遮蔽されるためである。この方法は、めっき槽内をテープ状製品を搬送していくリール・ツー・リール方式で有効な方法である。   By partially shielding the current C in the vicinity of the ends of the openings 25a and 26a of the sub-shielding plates 25 and 26, the plating thickness in the vicinity of the end of the conductor portion 15 can be suppressed. 6 and 7, the openings 25a and 26a of the sub shield plates 25 and 26 have the same width as the conductor width when the conductor portion 15 of the TAB tape 3 passes through the position near the line AA. This is because when the conductor portion 15 of the TAB tape 3 passes through the position near the −B line, the end portion of the conductor portion 15 is shielded by the projection shielding portions 25c and 26c. This method is an effective method in a reel-to-reel method in which a tape-shaped product is conveyed in the plating tank.

上述したように、遮蔽板を主遮蔽板と主遮蔽板の開口を調整する従遮蔽板とを重ね合わせた構造とし、テープ状製品の導体幅、導体パターン形状等に合った適切な開口幅、開口形状を有する従遮蔽板を用いることで、簡単に電流遮蔽構造を調整・変更することができると共に、高いめっき厚分布の均一化を実現できる。
また、従遮蔽板のみを交換することで、種々の品種に対してめっき厚分布の改善が図れる。更に、従遮蔽板は抜き差しが簡単にできる構造のため、交換が容易であり、結果として品種変更の際の対応を極めてスピーディに行える。また、めっき厚の均―化が容易になることから、電流密度を落とす必要がなくなり、生産性は高いレベルで維持可能である。
また、めっき厚分布を解析し、従遮蔽板の開口形状等を変更すること、即ち開口形状等にフィードバックをかけることで、更なるめっき厚分布の改善要求(膜厚規格範囲)に対応が可能となる。
As described above, the shield plate has a structure in which the main shield plate and the secondary shield plate for adjusting the opening of the main shield plate are overlapped, and the appropriate opening width suitable for the conductor width of the tape-like product, the conductor pattern shape, By using a secondary shielding plate having an opening shape, the current shielding structure can be easily adjusted and changed, and a uniform plating thickness distribution can be realized.
Moreover, the plating thickness distribution can be improved for various varieties by replacing only the sub shield plate. Furthermore, since the sub-shielding plate can be easily inserted and removed, it can be easily replaced. As a result, the response when changing the product type can be performed very quickly. Also, since the plating thickness can be easily leveled, it is not necessary to reduce the current density, and productivity can be maintained at a high level.
Also, by analyzing the plating thickness distribution and changing the aperture shape etc. of the secondary shield plate, that is, by applying feedback to the aperture shape etc., it is possible to meet further demands for improving the plating thickness distribution (thickness standard range). It becomes.

なお、上記実施形態では、ニッケルめっき、金めっきについて説明したが、本発明はこれら金属種以外(銅など)にも、勿論適用可能である。また、上記実施形態では、片面のみに導体部(導体層)を有するテープ状製品であったが、両面に導体部(導体層)を有するテープ状製品に対し、両面に電解めっきを行なう必要のある場合は、テープ状製品のパスラインの両側に本発明の遮蔽板とアノードとをそれぞれ設置することで同様に対応が可能である。   In the above embodiment, nickel plating and gold plating have been described. However, the present invention is naturally applicable to other metal types (such as copper). Moreover, in the said embodiment, although it was a tape-shaped product which has a conductor part (conductor layer) only on one side, it is necessary to perform electroplating on both surfaces with respect to the tape-shaped product which has a conductor part (conductor layer) on both surfaces. In some cases, the same problem can be solved by installing the shielding plate and the anode of the present invention on both sides of the pass line of the tape-like product.

次に、本発明の実施例を説明する。   Next, examples of the present invention will be described.

(1)評価サンプルの作製方法
TABテープ基材として住友金属鉱山製のエスパーフレックス材(銅厚:約8μm、ポリイミド厚:約38μm)を使用し、フォトエッチング工程を経て配線パターンを形成した。この配線パターンを形成したテープ基材を、図1に示すめっき装置を用いてニッケルめっき処理を行なった。なお、金めっきは実施しなかった。
ここで、遮蔽板の構造を変化させることで、数種類の評価サンプルを作製した。主遮蔽板の厚みは30mmであり、テープ基材のパスラインから10mm離れた所にその端部が位置するように設置した。従遮蔽板の厚みは8mmとし、主遮蔽板に沿わせてめっき槽の上側から挿入した。このとき、テープ基材のパスラインと従遮蔽板の端部までの距離(間隔)は2mmとなった。
ニッケルめっきの前処理は、硫酸系の酸性脱脂液および過酸化水素一硫酸系銅化研液(化学研磨液)を使用した。ニッケルめっきは、電流密度を4A/dmとしてめっき時間は2分となるようにテープ基材の搬送速度を調整した。この条件でめっき厚の平均値(理論値)としては1.6μm程度になる。ニッケルめっき厚の測定は蛍光X線膜厚計を使用
した。
(1) Preparation method of evaluation sample An Esperflex material (copper thickness: about 8 μm, polyimide thickness: about 38 μm) manufactured by Sumitomo Metal Mining was used as a TAB tape substrate, and a wiring pattern was formed through a photoetching process. The tape base material on which the wiring pattern was formed was subjected to nickel plating using the plating apparatus shown in FIG. Gold plating was not performed.
Here, several types of evaluation samples were produced by changing the structure of the shielding plate. The main shielding plate had a thickness of 30 mm, and was installed so that its end was located at a distance of 10 mm from the pass line of the tape substrate. The thickness of the sub shielding plate was 8 mm, and it was inserted from the upper side of the plating tank along the main shielding plate. At this time, the distance (interval) between the pass line of the tape base material and the end of the secondary shielding plate was 2 mm.
For the pretreatment of nickel plating, a sulfuric acid-based acid degreasing solution and a hydrogen peroxide-monosulfuric acid-based cuprate solution (chemical polishing solution) were used. For nickel plating, the current density was 4 A / dm 2 , and the conveyance speed of the tape substrate was adjusted so that the plating time was 2 minutes. Under this condition, the average value (theoretical value) of the plating thickness is about 1.6 μm. The nickel plating thickness was measured using a fluorescent X-ray film thickness meter.

(2)評価結果
表1に、テープ基材の幅が105mm、導体パターン部の幅が90mmの1列品のニッケルめっき厚測定結果を示す。実施例1では、上記図3に示す主遮蔽板(導体パターン部の幅と同じ90mm)と従遮蔽板(開口幅90mm)とを用いた。実施例2では、図3の主遮蔽板(開口幅90mm)と、図6の従遮蔽板(開口幅90mmで、開口の上下端部にくさび状の突起遮蔽部を有するもの)とを用いた。また、比較例1では、図3の主遮蔽板(開口幅90mm)のみを用い、従来例1では、遮蔽板を用いずにニッケルめっきを行った。
(2) Evaluation results Table 1 shows the nickel plating thickness measurement results for one-row products in which the width of the tape substrate is 105 mm and the width of the conductor pattern portion is 90 mm. In Example 1, the main shielding plate (90 mm which is the same as the width of the conductor pattern portion) and the secondary shielding plate (opening width 90 mm) shown in FIG. 3 were used. In Example 2, the main shielding plate (opening width 90 mm) of FIG. 3 and the secondary shielding plate (opening width 90 mm and having wedge-shaped protrusion shielding portions at the upper and lower ends of the opening) of FIG. 6 were used. . In Comparative Example 1, only the main shielding plate (opening width 90 mm) of FIG. 3 was used, and in Conventional Example 1, nickel plating was performed without using the shielding plate.

表2に、テープ基材の幅が158mm、導体パターン部の幅が各列61mmの2列品のニッケルめっき厚測定結果を示す。実施例3は、上記図4に示す主遮蔽板(2列の導体パターン部の幅と同じ131mm)と従遮蔽板(各列の幅と同じ開口幅61mm)とを用いた。実施例4では、図4の主遮蔽板(開口幅131mm)と、図7の従遮蔽板(開口幅61mmで、開口の上下端部にくさび状の突起遮蔽部を有するもの)とを用いた。また、比較例2では、図4の主遮蔽板(開口幅131mm)のみを用い、従来例2では、遮蔽板を用いずにニッケルめっきを行った。   Table 2 shows the nickel plating thickness measurement results of two-row products in which the width of the tape base material is 158 mm and the width of the conductor pattern portion is 61 mm in each row. In Example 3, the main shielding plate (131 mm which is the same as the width of the conductor pattern portions in two rows) and the secondary shielding plate (the opening width 61 mm which is the same as the width of each row) shown in FIG. 4 were used. In Example 4, the main shielding plate (opening width 131 mm) of FIG. 4 and the secondary shielding plate of FIG. 7 (opening width 61 mm and having wedge-shaped protrusion shielding portions at the upper and lower ends of the opening) were used. . In Comparative Example 2, only the main shielding plate (opening width 131 mm) of FIG. 4 was used, and in Conventional Example 2, nickel plating was performed without using the shielding plate.

Figure 2009293114
Figure 2009293114

表1より、実施例1、2の条件にて、ニッケルめっき厚の分布を均一化することができた。実施例2は実施例1の膜厚分布の解析結果をフィードバックし、従遮蔽板の開ロ端部をくさび形状に加工した場合(図6)の結果であり、更なるめっき厚の改善効果が得られた。即ち、実施例1では、導体層上のニッケルめっき厚の最大値と最小値との差が0.3
2μmであったが、実施例2では、0.12μmに減少した。比較例1は主遮蔽板のみを
使用した場合であり、主遮蔽板の開口幅を90mmとすることで遮蔽効果が出ており、めっき厚分布は遮蔽板を用いていない従来例1と比較して改善している。しかしながら、テープ基材のパスラインと遮蔽板(主遮蔽板)の距離が10mmと開いていることにより、実施例1と比較して遮蔽効果が弱まったと考えられる。従来例1では、めっき厚のばらつきが大きいことが確認された。
From Table 1, the nickel plating thickness distribution could be made uniform under the conditions of Examples 1 and 2. Example 2 is a result of feeding back the analysis result of the film thickness distribution of Example 1 and processing the open end of the secondary shielding plate into a wedge shape (FIG. 6), and further improves the plating thickness. Obtained. That is, in Example 1, the difference between the maximum value and the minimum value of the nickel plating thickness on the conductor layer is 0.3.
Although it was 2 μm, in Example 2, it decreased to 0.12 μm. Comparative Example 1 is a case where only the main shielding plate is used. The shielding effect is obtained by setting the opening width of the main shielding plate to 90 mm, and the plating thickness distribution is compared with Conventional Example 1 which does not use the shielding plate. Has improved. However, it is considered that the shielding effect was weakened as compared with Example 1 because the distance between the pass line of the tape substrate and the shielding plate (main shielding plate) was 10 mm. In Conventional Example 1, it was confirmed that the variation in plating thickness was large.

Figure 2009293114
Figure 2009293114

表2からも、実施例3、4の条件にて、ニッケルめっき厚の分布を改善できることを確認した。実施例4は実施例3の膜厚分布の解析結果をフィードバックし、従遮蔽板の開ロ端部をくさび形状に加工した場合(図7)の結果であり、表1のときと同様、更なるめっき厚の改善効果が得られた。比較例2は主遮蔽板のみを使用した場合であり、主遮蔽板の開口幅を131mmとすることで遮蔽効果が出ており、めっき厚分布は遮蔽板を用いていない従来例2と比較して改善している。しかしながら、テープ基材のパスラインと遮蔽板(主遮蔽板)の距離が10mmと開いていることにより、実施例3と比較して遮蔽効果が弱まったと考えられる。従来例2では、めっき厚のばらつきが大きいことが確認された。   Also from Table 2, it was confirmed that the distribution of nickel plating thickness could be improved under the conditions of Examples 3 and 4. Example 4 feeds back the analysis result of the film thickness distribution of Example 3, and is the result when the open end of the secondary shielding plate is processed into a wedge shape (FIG. 7). The effect of improving the plating thickness was obtained. The comparative example 2 is a case where only the main shielding plate is used. The shielding effect is obtained by setting the opening width of the main shielding plate to 131 mm, and the plating thickness distribution is compared with the conventional example 2 which does not use the shielding plate. Has improved. However, since the distance between the pass line of the tape base material and the shielding plate (main shielding plate) is 10 mm, it is considered that the shielding effect is weakened as compared with Example 3. In Conventional Example 2, it was confirmed that the variation in plating thickness was large.

本発明の実施形態の電解めっきに用いられるリール・ツー・リール生産方式による電解めっき装置の一例を示す概略的な平面配置図である。1 is a schematic plan view showing an example of an electroplating apparatus using a reel-to-reel production method used for electroplating according to an embodiment of the present invention. 図1の給電ロール10とTABテープ3との配置を示すもので、(a)は斜視図、(b)は(a)のb−b断面図である。The arrangement | positioning of the electric power feeding roll 10 of FIG. 1 and the TAB tape 3 is shown, (a) is a perspective view, (b) is bb sectional drawing of (a). 1列取りのTABテープに適した遮蔽板を備えた第1の実施形態の電解めっき装置を示す図である。It is a figure which shows the electroplating apparatus of 1st Embodiment provided with the shielding board suitable for the TAB tape of 1 row. 2列取りのTABテープに適した遮蔽板を備えた第2の実施形態の電解めっき装置を示す図である。It is a figure which shows the electroplating apparatus of 2nd Embodiment provided with the shielding board suitable for the TAB tape of 2 rows. 3列取りのTABテープに適した遮蔽板を備えた第3の実施形態の電解めっき装置を示す図である。It is a figure which shows the electrolytic plating apparatus of 3rd Embodiment provided with the shielding board suitable for the TAB tape of 3 rows. 1列取りのTABテープに適した従遮蔽板の他の実施形態を示す図である。It is a figure which shows other embodiment of the sub-shielding board suitable for the TAB tape of 1 row | line taking. 2列取りのTABテープに適した従遮蔽板の他の実施形態を示す図である。It is a figure which shows other embodiment of the secondary shielding board suitable for the TAB tape of 2 rows. 従来の電解めっき装置を示すもので、(1)〜(4)は全てTABテープの搬送方向に垂直な断面図である。The conventional electroplating apparatus is shown, (1)-(4) are all sectional views perpendicular to the transport direction of the TAB tape. 従来の電解めっき装置を示すもので、(1)〜(3)は全てTABテープの搬送方向に垂直な断面図である。The conventional electroplating apparatus is shown, (1)-(3) are all sectional views perpendicular to the transport direction of the TAB tape.

符号の説明Explanation of symbols

1 巻き出し部
2 リール
3 TABテープ(テープ状製品)
4 前処理槽
5 ニッケルめっき槽
6 金めっき槽
7 後洗浄槽
8 乾燥槽
9 巻き取り部
10 給電ロール
11 給電パターン
12 めっき槽
13 めっき液
14 アノード
15 導体部(導体パターン)
18 主遮蔽板
18a 開口
19 従遮蔽板
19a 開口
20 遮蔽板
21、23 主遮蔽板
22、24 従遮蔽板
21a、22a、23a、24a 開口
22b、24b、26b 遮蔽部
25c、26c 突起遮蔽部
C 電流(電流線)
1 Unwinding part 2 Reel 3 TAB tape (tape-like product)
4 Pre-treatment tank 5 Nickel plating tank 6 Gold plating tank 7 Post-cleaning tank 8 Drying tank 9 Winding part 10 Feed roll 11 Feed pattern 12 Plating tank 13 Plating solution 14 Anode 15 Conductor part (conductor pattern)
18 Main shielding plate 18a Opening 19 Sub shielding plate 19a Opening 20 Shielding plates 21, 23 Main shielding plates 22, 24 Sub shielding plates 21a, 22a, 23a, 24a Openings 22b, 24b, 26b Shielding portions 25c, 26c Projection shielding portion C Current (Current line)

Claims (10)

めっき液が充填されるめっき処理槽内に少なくとも一個以上のアノードが垂直に設けられ、電解めっき処理される導体部を有するテープ状製品が、その面を垂直にして前記アノードに対向しつつ前記アノードに沿って搬送され、前記アノードと前記テープ状製品との間に、開口を有する絶縁性の遮蔽板を設けた電解めっき装置において、
前記遮蔽板は、主遮蔽板と、当該主遮蔽板の開口を調整する従遮蔽板とを重ね合わせて構成されていることを特徴とする電解めっき装置。
At least one or more anodes are provided vertically in a plating tank filled with a plating solution, and a tape-like product having a conductor portion to be electroplated is placed on the anode while facing the anode with its surface vertical. In the electroplating apparatus provided with an insulating shielding plate having an opening between the anode and the tape-shaped product,
The electroplating apparatus, wherein the shielding plate is configured by superimposing a main shielding plate and a secondary shielding plate for adjusting an opening of the main shielding plate.
前記従遮蔽板は、前記めっき処理槽から抜き差し可能に設けられていることを特徴とする請求項1に記載電解めっき装置。   The electroplating apparatus according to claim 1, wherein the sub shield plate is provided so as to be removable from the plating tank. 前記従遮蔽板は、前記主遮蔽板の前記テープ状製品側に設置されていることを特徴とする請求項1または2に記載の電解めっき装置。   The electroplating apparatus according to claim 1, wherein the sub shield plate is installed on the tape-like product side of the main shield plate. 多列の前記導体部を有する前記テープ状製品に対し、前記従遮蔽板は、前記テープ状製品の各列の前記導体部に対応した開口を有することを特徴とする請求項1〜3のいずれかに記載の電解めっき装置。   4. The tape-shaped product having multiple rows of the conductor portions, the secondary shield plate has openings corresponding to the conductor portions of each row of the tape-shaped product. Electrolytic plating apparatus according to the above. 前記従遮蔽板の開口の上下幅を、前記テープ状製品の導体部の幅よりも狭く設定したことを特徴とする請求項1〜4のいずれかに記載の電解めっき装置。   The electroplating apparatus according to any one of claims 1 to 4, wherein a vertical width of the opening of the sub shielding plate is set to be narrower than a width of a conductor portion of the tape-shaped product. 前記従遮蔽板の開口の上下の端部に、前記主遮蔽板の開口の内側へと突出される突起遮蔽部が、前記上下の端部に沿って複数形成されていることを特徴とする請求項1〜5のいずれかに記載の電解めっき装置。   A plurality of protrusion shielding portions projecting inward of the opening of the main shielding plate are formed at upper and lower ends of the opening of the secondary shielding plate along the upper and lower ends. The electrolytic plating apparatus in any one of claim | item 1 -5. 前記主遮蔽板は、その下端部が前記めっき処理槽内の底面上に設置され、その上端部がめっき液面から突き出て設けられていることを特徴とする請求項1〜6のいずれかに記載の電解めっき装置。   The main shield plate has a lower end portion installed on a bottom surface in the plating tank and an upper end portion protruding from the plating solution surface. The electroplating apparatus of description. 前記主遮蔽板の厚みが20〜50mmであり、前記従遮蔽板の厚みが5〜10mmであることを特徴とする請求項1〜7のいずれかに記載の電解めっき装置。   The thickness of the said main shielding board is 20-50 mm, The thickness of the said secondary shielding board is 5-10 mm, The electroplating apparatus in any one of Claims 1-7 characterized by the above-mentioned. めっき液が充填されためっき処理槽内に少なくとも一個以上のアノードを垂直に設け、前記アノードの面に対向させて開口を有する絶縁性の遮蔽板を設け、前記アノードとは反対側の前記遮蔽板の近傍に、めっき処理される導体部を有するテープ状製品を搬送して、前記導体部をめっき処理する電解めっき方法において、
前記遮蔽板として、主遮蔽板と当該主遮蔽板の開口を調整する従遮蔽板とを重ね合わせた遮蔽板を用いるようにしたことを特徴とする電解めっき方法。
At least one or more anodes are provided vertically in a plating tank filled with a plating solution, an insulating shielding plate having an opening is provided so as to face the surface of the anode, and the shielding plate on the opposite side of the anode In the electroplating method of transporting a tape-shaped product having a conductor portion to be plated in the vicinity of the plate, and plating the conductor portion,
An electrolytic plating method characterized in that a shielding plate in which a main shielding plate and a secondary shielding plate for adjusting an opening of the main shielding plate are overlapped is used as the shielding plate.
前記遮蔽板を用いて電解めっきされた前記テープ状製品の導体部のめっき厚分布の結果に基づいて、前記電解めっきに用いた従遮蔽板を、当該従遮蔽板とは異なる開口の上下幅または開口形状を有する別の従遮蔽板に変更して、前記めっき厚分布を調整するようにしたことを特徴とする請求項9に記載の電解めっき方法。   Based on the result of the plating thickness distribution of the conductor portion of the tape-shaped product electroplated using the shielding plate, the sub-shielding plate used for the electroplating has a vertical width of an opening different from the sub-shielding plate or The electrolytic plating method according to claim 9, wherein the plating thickness distribution is adjusted by changing to another sub-shielding plate having an opening shape.
JP2008150698A 2008-06-09 2008-06-09 Electrolytic plating apparatus and electrolytic plating method Expired - Fee Related JP5109821B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008150698A JP5109821B2 (en) 2008-06-09 2008-06-09 Electrolytic plating apparatus and electrolytic plating method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008150698A JP5109821B2 (en) 2008-06-09 2008-06-09 Electrolytic plating apparatus and electrolytic plating method

Publications (2)

Publication Number Publication Date
JP2009293114A true JP2009293114A (en) 2009-12-17
JP5109821B2 JP5109821B2 (en) 2012-12-26

Family

ID=41541555

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008150698A Expired - Fee Related JP5109821B2 (en) 2008-06-09 2008-06-09 Electrolytic plating apparatus and electrolytic plating method

Country Status (1)

Country Link
JP (1) JP5109821B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010031316A (en) * 2008-07-28 2010-02-12 Sumitomo Metal Mining Co Ltd Method for manufacturing metal-coated resin substrate, plating apparatus, and plating method
JP2012207293A (en) * 2011-03-30 2012-10-25 Dowa Metaltech Kk Power feeding electrode, power feeder, plating device, plating method, plating member and method for producing the same
JP2014129592A (en) * 2012-12-27 2014-07-10 Samsung Electro-Mechanics Co Ltd Electrolytic plating shield board and electrolytic plating device possessing the same
JP2015155563A (en) * 2014-02-20 2015-08-27 住友金属鉱山株式会社 Apparatus and method for continuous electrolytic plating, metalized resin film and production method of the film
JP2016065282A (en) * 2014-09-25 2016-04-28 Dowaメタルテック株式会社 Partial plating method and device therefor
JP2017119894A (en) * 2015-12-28 2017-07-06 Dowaメタルテック株式会社 Partial plating method and device therefor

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58143863U (en) * 1982-03-25 1983-09-28 住友金属工業株式会社 Continuous electroplating equipment
JPS62274098A (en) * 1986-05-21 1987-11-28 Hitachi Cable Ltd Uniform electroplating method
JPS6415392A (en) * 1987-07-07 1989-01-19 Hitachi Cable Apparatus for partial plating of long-sized metal bar body
JPH09111493A (en) * 1995-10-13 1997-04-28 Ideya:Kk Plating device for band-shaped member
JPH11246999A (en) * 1998-03-03 1999-09-14 Ebara Corp Plating method for wafer and apparatus therefor
JP2002514267A (en) * 1998-04-23 2002-05-14 アトーテヒ ドイッチュラント ゲゼルシャフト ミット ベシュレンクテル ハフツング Apparatus for electrolytically treating a plate-shaped workpiece and a method for electrically shielding an edge area of the workpiece during the electrolytic processing
JP2002155395A (en) * 2000-11-16 2002-05-31 Nitto Denko Corp Method and device for plating long substrate
JP2004277783A (en) * 2003-03-14 2004-10-07 Chuo Seisakusho Ltd Plating device for printed circuit board
JP2007224365A (en) * 2006-02-23 2007-09-06 Matsushita Electric Ind Co Ltd Electroplating method and electroplating device

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58143863U (en) * 1982-03-25 1983-09-28 住友金属工業株式会社 Continuous electroplating equipment
JPS62274098A (en) * 1986-05-21 1987-11-28 Hitachi Cable Ltd Uniform electroplating method
JPS6415392A (en) * 1987-07-07 1989-01-19 Hitachi Cable Apparatus for partial plating of long-sized metal bar body
JPH09111493A (en) * 1995-10-13 1997-04-28 Ideya:Kk Plating device for band-shaped member
JPH11246999A (en) * 1998-03-03 1999-09-14 Ebara Corp Plating method for wafer and apparatus therefor
JP2002514267A (en) * 1998-04-23 2002-05-14 アトーテヒ ドイッチュラント ゲゼルシャフト ミット ベシュレンクテル ハフツング Apparatus for electrolytically treating a plate-shaped workpiece and a method for electrically shielding an edge area of the workpiece during the electrolytic processing
JP2002155395A (en) * 2000-11-16 2002-05-31 Nitto Denko Corp Method and device for plating long substrate
JP2004277783A (en) * 2003-03-14 2004-10-07 Chuo Seisakusho Ltd Plating device for printed circuit board
JP2007224365A (en) * 2006-02-23 2007-09-06 Matsushita Electric Ind Co Ltd Electroplating method and electroplating device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010031316A (en) * 2008-07-28 2010-02-12 Sumitomo Metal Mining Co Ltd Method for manufacturing metal-coated resin substrate, plating apparatus, and plating method
JP2012207293A (en) * 2011-03-30 2012-10-25 Dowa Metaltech Kk Power feeding electrode, power feeder, plating device, plating method, plating member and method for producing the same
JP2014129592A (en) * 2012-12-27 2014-07-10 Samsung Electro-Mechanics Co Ltd Electrolytic plating shield board and electrolytic plating device possessing the same
JP2015155563A (en) * 2014-02-20 2015-08-27 住友金属鉱山株式会社 Apparatus and method for continuous electrolytic plating, metalized resin film and production method of the film
JP2016065282A (en) * 2014-09-25 2016-04-28 Dowaメタルテック株式会社 Partial plating method and device therefor
JP2017119894A (en) * 2015-12-28 2017-07-06 Dowaメタルテック株式会社 Partial plating method and device therefor

Also Published As

Publication number Publication date
JP5109821B2 (en) 2012-12-26

Similar Documents

Publication Publication Date Title
JP5109821B2 (en) Electrolytic plating apparatus and electrolytic plating method
US7704365B2 (en) Metal plating process
JP7107190B2 (en) Method for manufacturing copper-clad laminate
KR20150026728A (en) Electroplating apparatus for manufacturing flexible printed circuit board
TWI383475B (en) Plating apparatus
KR102022920B1 (en) Roll-to-roll Horizontal Continuous Plating Equipment
JP7070012B2 (en) Electroplating equipment and method for manufacturing metal-clad laminates
KR20210035299A (en) Plating device
KR20200010033A (en) Copper clad laminate
JPS5841358B2 (en) plating device
JP5212225B2 (en) Copper foil plating method and plating apparatus therefor
JP6646331B2 (en) Partial plating method and apparatus therefor
JP7107189B2 (en) COPPER CLAD LAMINATES AND METHOD FOR MANUFACTURING COPPER CLAD LAMINATES
JP6221817B2 (en) Continuous electrolytic plating apparatus and method, metallized resin film and method for producing the same
JP6367664B2 (en) Partial plating method and apparatus
KR20200030651A (en) Apparatus For Individual Electroplating For PCB
JP6115309B2 (en) Chemical processing equipment
JP6839992B2 (en) Plating method and its equipment
KR102598008B1 (en) Positive Electrode Plate for Apparatus for Manufacturing Copper Foil and Apparatus for Manufacturing Copper Foil
US7449089B2 (en) Conveyorized plating line and method for electrolytically metal plating a workpiece
KR102595709B1 (en) Positive Electrode Plate for Apparatus for Manufacturing Copper Foil and Apparatus for Manufacturing Copper Foil
US20210130977A1 (en) Anode assembly
KR102519062B1 (en) Assembly structure of an anode electrode for manufacture of electrolytic copper foil
TWI407859B (en) Roll-to-roll transporting equipment for plating a selective portion on flexible circuit board and process thereof
CN110777423B (en) Tin stripping liquid and method for recovering tin

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20100825

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120426

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120510

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120706

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120911

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120924

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20151019

Year of fee payment: 3

R150 Certificate of patent (=grant) or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

LAPS Cancellation because of no payment of annual fees