JP2009285644A - Manufacturing method of catalyst material and vacuum arc evaporation device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a catalyst material suppressing charge-up of a substrate surface without lowering discharge voltage, and a vacuum arc evaporation device. <P>SOLUTION: In one embodiment of the present invention, an arc evaporation source is used, the arc evaporation source having a cylindrical insulation member 23, a metallic evaporation material 21 having catalytic activity disposed on the outer periphery of the insulation member, a trigger electrode 22 disposed on the outer periphery of the insulation member, and a cylindrical anode electrode 24 concentrically disposed around the trigger electrode. A substrate W formed with a carbon-based material layer C on the surface is prepared. Particles of the evaporation material are formed by discharge control between the evaporation material in the arc evaporation source and the cylindrical electrode in a pressure-reduced atmosphere, and attached on the surface of the carbon-based material layer. Electrons are supplied to the pressure-reduced atmosphere from an electron supply source 40 in synchronization with the discharge control in the arc evaporation source. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a method for producing a catalyst material in which fine particles of a catalyst metal are supported on a carbon-based material and a vacuum arc deposition apparatus.

  Cobalt nanoparticles, for example, are attracting attention as carbon nanotube underlayers (catalyst layers) and catalyst metals for fuel cells, and platinum nanoparticles, for example, as nanoparticle catalysts for solid polymer fuel cells and methanol fuel cells, etc. Yes. In recent years, attempts have been made to form a catalyst layer made of cobalt nanoparticles or platinum nanoparticles on the surface of a support using a coaxial vacuum arc deposition source (see Patent Document 1).

  In Patent Document 1, a cylindrical anode electrode, a columnar deposition material disposed inside the anode electrode, a tubular insulating member disposed around the deposition material, and a periphery of the insulating member are disclosed. A coaxial vacuum arc plasma deposition source having a cylindrical trigger electrode arranged is disclosed. In this coaxial vacuum arc plasma deposition source, an arc discharge is induced between the anode electrode and the deposition material by a trigger discharge generated between the trigger electrode and the deposition material, and emitted from the deposition material. The formed fine particles are discharged from the opening of the anode electrode. The discharged fine particles of the vapor deposition material are deposited on the substrate to form a fine particle layer.

  Therefore, after forming the carbon-based material layer on the substrate, the catalyst material can be manufactured by depositing platinum fine particles on the surface of the carbon-based material layer using the above evaporation source.

JP 2007-179963 A

  However, if platinum fine particles are caused to adhere to the surface of the carbon-based material layer using the above-described conventional coaxial vacuum arc plasma deposition source, the substrate surface may be charged up by the charge (positive charge) of the fine particles. . If the amount of charge becomes too large, discharge (arcing) tends to occur between the fine particles, between the fine particles and the substrate, or between the fine particles and the stage supporting the fine particles. When the arcing occurs, discharge traces are generated on the surface of the substrate, or fine particles are scattered from the surface of the substrate, making it impossible to manufacture the catalyst material properly.

  In order to prevent this problem, it is conceivable to reduce the charge amount of the generated fine particles by reducing the discharge voltage of the vapor deposition source. However, the magnitude of the discharge voltage of the vapor deposition source is greatly related to the particle size of the generated fine particles. Therefore, changing the discharge voltage is not preferable because it involves changing the particle diameter of the catalyst metal.

  In view of the circumstances as described above, an object of the present invention is to provide a method for producing a catalyst material and a vacuum arc vapor deposition apparatus capable of suppressing the charge-up of the substrate surface without lowering the discharge voltage.

The manufacturing method of the catalyst material which concerns on one form of this invention is arrange | positioned in the outer peripheral part of the cylindrical insulating member, the vapor deposition material which consists of the metal which has the catalytic activity arrange | positioned at the outer peripheral part of the said insulating member, and the said insulating member An arc evaporation source having a trigger electrode formed and a cylindrical electrode arranged concentrically around the trigger electrode is used.
And the manufacturing method of the said catalyst material includes preparing the board | substrate with which the carbon-type material layer was formed in the surface. The fine particles of the vapor deposition material are generated by discharge control between the vapor deposition material and the cylindrical electrode in the arc vapor deposition source under a reduced pressure atmosphere, and are attached to the surface of the carbon-based material layer. In synchronization with the discharge control in the arc evaporation source, electrons are supplied from the electron supply source to the reduced-pressure atmosphere.

A vacuum arc vapor deposition apparatus according to another embodiment of the present invention includes a vacuum chamber, an arc vapor deposition source, a substrate support surface, an electron supply source, and a control unit.
The arc vapor deposition source includes a cylindrical insulating member, a vapor deposition material made of metal having catalytic activity disposed on the outer peripheral portion of the insulating member, a trigger electrode disposed on the outer peripheral portion of the insulating member, and the trigger And a cylindrical electrode disposed concentrically around the electrode. The arc vapor deposition source is installed inside the vacuum chamber.
The substrate support surface is installed inside the vacuum chamber so as to face the arc vapor deposition source. The electron supply source supplies electrons to the inside of the vacuum chamber. The control unit emits electrons from the electron supply source in synchronization with discharge control between the vapor deposition material and the cylindrical electrode in the arc vapor deposition source.

A method for producing a catalyst material according to an embodiment of the present invention includes a cylindrical insulating member, a vapor deposition material made of a metal having catalytic activity and disposed on the outer peripheral portion of the insulating member, and the outer peripheral portion of the insulating member. An arc vapor deposition source having a trigger electrode arranged in a cylindrical shape and a cylindrical electrode arranged concentrically around the trigger electrode is used.
And the manufacturing method of the said catalyst material includes preparing the board | substrate with which the carbon-type material layer was formed in the surface. The fine particles of the vapor deposition material are generated by discharge control between the vapor deposition material and the cylindrical electrode in the arc vapor deposition source under a reduced pressure atmosphere, and are attached to the surface of the carbon-based material layer. In synchronization with the discharge control in the arc evaporation source, electrons are supplied from the electron supply source to the reduced-pressure atmosphere.

  In the method for producing the catalyst material, electrons are supplied from the electron supply source onto the substrate in synchronization with the discharge control in the arc vapor deposition source. Therefore, the charge-up of the substrate surface by the positively charged catalytic metal fine particles is neutralized by the supply of electrons from the electric supply source. As a result, it is possible to appropriately manufacture a catalyst material using the carbon-based material layer as a carrier while suppressing charge-up of the substrate surface.

  Typically, the arc deposition source discharge is pulsed. The amount of electrons supplied from the electron supply source can be set to an amount sufficient to cancel the charge amount of the metal fine particle group generated by one arc discharge in the arc evaporation source. By supplying the same amount of electrons for each discharge of the arc evaporation source, it becomes possible to efficiently eliminate the charged charges of the metal fine particles.

The supply of electrons from the electron supply source can be synchronized with the generation of a trigger voltage to the trigger electrode and the vapor deposition material in the arc vapor deposition source.
This facilitates the supply control of electrons from the electron supply source, and makes it possible to unitize the discharge control system of the arc evaporation source and the control system of the electron supply source.

The carbon-based material layer can be a graphite nanofiber layer or a carbon nanotube layer, and the vapor deposition material can be platinum or an alloy thereof.
Thereby, it is possible to appropriately manufacture a catalyst material in which platinum-based catalytic metal fine particles are supported on a carbon-based material.

A vacuum arc vapor deposition apparatus according to another embodiment of the present invention includes a vacuum chamber, an arc vapor deposition source, a substrate support surface, an electron supply source, and a control unit.
The arc vapor deposition source includes a cylindrical insulating member, a vapor deposition material made of metal having catalytic activity disposed on the outer peripheral portion of the insulating member, a trigger electrode disposed on the outer peripheral portion of the insulating member, and the trigger And a cylindrical electrode disposed concentrically around the electrode. The arc vapor deposition source is installed inside the vacuum chamber.
The substrate support surface is installed inside the vacuum chamber so as to face the arc vapor deposition source. The electron supply source supplies electrons to the inside of the vacuum chamber. The control unit emits electrons from the electron supply source in synchronization with discharge control between the vapor deposition material and the cylindrical electrode in the arc vapor deposition source.

  The vacuum arc deposition apparatus includes a control unit that emits electrons from the electron supply source in synchronization with discharge control between the deposition material and the cylindrical electrode in the arc deposition source. As a result, it is possible to appropriately manufacture a catalyst material using the carbon-based material layer as a carrier while suppressing charge-up of the substrate surface.

The arc vapor deposition source may include a power supply unit including a first DC power supply, a second DC power supply, and a capacitor unit. The first DC power source is connected between the vapor deposition material and the trigger electrode. The second DC power source is connected between the vapor deposition material and the cylindrical electrode. The capacitor unit is connected in parallel to the second DC power source. And the said control unit can be set as the structure which drives the said power supply unit and the said electron supply source synchronously.
Thereby, the charge-up of the substrate surface can be suppressed without reducing the power supply voltage of the second DC power supply or the capacity of the capacitor unit by the electrons supplied from the electron supply source. In addition, the discharge control system of the arc vapor deposition source and the control system of the electron supply source can be unitized to simplify the configuration of the vacuum arc vapor deposition apparatus.

The configuration of the electron supply source is not particularly limited, and can be, for example, a hot cathode source or a cold cathode source.
Thereby, the configuration of the electron supply source can be simplified, and the electron supply amount can be easily controlled. Note that the electron supply source can also be constituted by a plasma generation source and an extraction electrode for extracting electrons from the generated plasma.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[First Embodiment]
FIG. 1 is a schematic configuration diagram of a vacuum arc vapor deposition apparatus 1 according to a first embodiment of the present invention. The vacuum arc vapor deposition apparatus 1 has a vacuum chamber 10 and a coaxial vacuum arc vapor deposition source (hereinafter simply referred to as “arc vapor deposition source”) 13 installed in the vacuum chamber 10.

  In the vacuum chamber 10, a stage 17 having a substrate support surface 17a is installed horizontally. The stage 17 is connected to a rotation introducing mechanism 18 that is airtightly inserted into the bottom of the vacuum chamber 10. The stage 17 is configured to be rotatable inside the vacuum chamber 10 by driving a motor 19. The stage 17 may incorporate a heater or the like for heating the substrate W.

A vacuum exhaust system 30 is connected to the vacuum chamber 10 so that the inside of the vacuum chamber 10 can be exhausted and maintained in a vacuum atmosphere of, for example, 10 ⁻⁵ Pa or less. The vacuum exhaust system 30 includes a variable valve 31, a turbo molecular pump 32, a valve 33, and a rotary pump 34. The vacuum chamber 10 is connected (grounded) to a ground potential.

  An arc evaporation source 13 is installed on the top plate portion of the vacuum chamber 10 so as to face the substrate support surface 17 a of the stage 17. The arc vapor deposition source 13 includes a vapor deposition material 21 as a cathode electrode, a cylindrical trigger electrode 22 disposed around the vapor deposition material 21, and a cylindrical insulating member disposed between the vapor deposition material 21 and the trigger electrode 22. 23 and a cylindrical anode electrode 24 (cylindrical electrode) arranged concentrically around the trigger electrode 22.

  The vapor deposition material 21 is made of a metal material having catalytic activity (for example, platinum, platinum alloy, cobalt, cobalt alloy, palladium, palladium alloy, etc.). In the present embodiment, the vapor deposition material 21 is made of platinum or an alloy thereof. The vapor deposition material 21 has a columnar shape and is disposed at the axial center position of the anode electrode 24.

  The trigger electrode 22 is made of stainless steel, for example, and is attached to the outer peripheral side of the vapor deposition material 21 via an insulating member 23. The insulating member 23 is a hat type having a large diameter portion and a small diameter portion, and is made of a hard insulating material such as alumina. The insulating member 23 is attached between the vapor deposition material 21 and the trigger electrode 22 with the small diameter portion facing the opening 24 a side of the anode electrode 24.

  A power supply unit 25 is installed outside the vacuum chamber 10. The power supply unit 25 includes a trigger power supply 26 as a first DC power supply, an arc power supply 27 as a second DC power supply, and a capacitor unit 28.

  The trigger power source 26 is connected between the vapor deposition material 21 and the trigger electrode 22. The trigger power supply 26 is composed of a pulse transformer. For example, the input voltage is 200 V, and the pulse voltage in the order of microseconds is boosted by about 17 times and output at 3.4 kV (several microamperes). Yes. The trigger power supply 26 is connected to apply a boosted voltage to the trigger electrode 22 with a positive polarity with respect to the vapor deposition material 21.

  The arc power source 27 is connected between the vapor deposition material 21 and the anode electrode 24. The arc power source 27 is, for example, a DC power source having a capacity of 400 V and several amperes. The positive electrode of the arc power source 27 is connected to the anode electrode 24, and the negative electrode is connected to the vapor deposition material 21. The positive electrode of the arc power supply 27 is connected (grounded) to the ground potential.

  The capacitor unit 28 is connected in parallel to the arc power supply 27 between the positive electrode and the negative electrode of the arc power supply 27. The capacitor unit 28 is formed by connecting a plurality of capacitors in parallel, and the total capacity thereof is set to 1800 μF, for example. In the present embodiment, the power supply unit 25 is configured to repeat charging and discharging at a cycle of 1 second (1 Hz).

  The arc evaporation source 13 of the present embodiment is configured as described above. The configuration of the arc vapor deposition source is not limited to the above example, and for example, a configuration in which a vapor deposition material, an insulating member, and a trigger electrode are attached along the axial direction of the anode electrode may be employed.

  The vacuum arc deposition apparatus 1 according to the present embodiment further includes an electron supply source 40 that supplies electrons into the vacuum chamber 10. In the present embodiment, the electron supply source 40 includes a filament 41 disposed inside the vacuum chamber 10 and a power supply unit 42 disposed outside the vacuum chamber 10 and supplying a current to the filament 41. In particular, in the present embodiment, a plurality of electron supply sources 40 are installed around the stage 17.

  The electron supply source 40 is configured as a hot cathode source that generates thermoelectrons from the filament 41 by supplying current from the power supply unit 42. As a result, the electron supply source 40 can have a relatively simple configuration, and the amount of generated electrons can be easily controlled. As will be described later, instead of this, the electron supply source may be constituted by a cold cathode source that generates electrons from the electrode by applying a voltage to the electrode.

  The vacuum arc vapor deposition apparatus 1 further includes a control unit 50 that controls the power supply unit 42 of each electron supply source 40 in common. The control unit 50 is installed outside the vacuum chamber 10 and controls driving of each electron supply source 40 to supply a predetermined amount of electrons into the vacuum chamber 10.

  The control unit 50 is configured to drive each electron supply source 40 so as to simultaneously generate electrons from each electron supply source 40. However, the present invention is not limited thereto, and each electron supply source 40 is driven individually. You may comprise so that an electron may be generated only from arbitrary electron supply sources. Note that, for example, switching control between the power supply unit 42 and the filament 41 is employed for driving control of the electron supply source 40 by the control unit 50.

  The control unit 50 is configured to be able to control not only the electron supply source 40 but also the power supply unit 25 of the arc vapor deposition source 13. That is, in the present embodiment, the control unit 50 is configured to emit electrons from the electron supply source 40 in synchronization with the discharge control between the vapor deposition material 21 and the anode electrode 24 in the arc vapor deposition source 13. . Specifically, while the arc power source is generated in the arc vapor deposition source 13 (for example, 200 to 500 microseconds), electrons are emitted from the electron supply source 40.

  As will be described later, the arc vapor deposition source 13 applies a power supply voltage of the trigger power source 26 between the trigger electrode 22 and the vapor deposition material 21 to generate a trigger discharge therebetween. An arc discharge occurs between the vapor deposition material 21 and the anode electrode 24 so as to be induced by the trigger discharge. When the arc discharge occurs, fine particles of the vapor deposition material 21 are generated, and the fine particles are irradiated toward the substrate W on the stage 17 disposed to face the arc vapor deposition source 13. Since the generated fine particles of the vapor deposition material 21 are positively charged ions, the surface of the substrate W may be charged up during the vapor deposition process.

  Therefore, in the present embodiment, electrons are supplied from the electron supply source 40 to the inside of the vacuum chamber 10 to suppress the charge-up of the substrate W that is generated due to the charge of the fine particles of the vapor deposition material 21. .

  Hereinafter, operation | movement of the vacuum arc vapor deposition apparatus 1 of this Embodiment is demonstrated.

  First, the substrate W is placed on the substrate support surface 17 a of the stage 17. In the present embodiment, the substrate W is a 50 mm × 50 mm Si substrate. A carbon-based material layer C is formed on the surface of the substrate W. The carbon-based material layer C is formed of a graphite nanofiber layer or a carbon nanotube layer. For these carbon-based materials, a method of uniformly applying carbon powder on the surface of the substrate W by spraying or forming a film by chemical vapor deposition (CVD) can be employed.

Next, the vacuum exhaust system 30 is operated to exhaust the inside of the vacuum chamber 10 to a predetermined degree of vacuum (for example, about 10 ⁻⁵ Pa).

  Subsequently, the deposition process is started. First, a power supply voltage of the trigger power supply 27 is applied between the vapor deposition material 21 and the trigger electrode 22 to generate creeping discharge (trigger discharge) through the surface of the insulating member 23. When the trigger discharge occurs, the withstand voltage between the vapor deposition material 21 and the anode electrode 24 decreases, and an arc discharge is induced between the vapor deposition material 21 and the anode electrode 24. When the arc discharge is induced, the capacitor unit 27 is discharged, and an arc current flows between the vapor deposition material 21 and the anode electrode 24. By this arc current, the surface of the vapor deposition material 21 is heated, melted, and evaporated to form a plasma of platinum or an alloy thereof.

  The magnitude and generation time of the arc current are determined almost quantitatively depending on the voltage of the arc power source 27, the capacity of the capacitor unit 28, the type of wiring, and the length thereof. In the present embodiment, the magnitude of the arc current is 2000 to 5000 amperes and the generation time is 200 to 550 microseconds under the above-described conditions.

  Due to the formation of the arc discharge, an electromagnetic force is generated along the axial direction inside the cylindrical anode electrode 24. This electromagnetic force is a Lorentz force or a Coulomb force that deflects the flight direction of positive ions emitted from the vapor deposition material 21 toward the inside of the vacuum chamber 10, that is, toward the substrate W on the stage 17. Therefore, the charged particles emitted from the vapor deposition material 21 are classified into those that fly toward the substrate W and those that do not, depending on the magnitude of the charge mass ratio (charge / mass).

  Specifically, fine charged particles having a relatively large charge mass ratio (for example, nano-sized particle diameter) receive electromagnetic force generated in the anode electrode 24 and move toward the opening 24 a of the anode electrode 24. The flight direction is bent and discharged into the vacuum chamber 10. On the other hand, for large particles and neutral particles having a relatively small charge-mass ratio, the flight direction is straight without being bent by the electromagnetic force in the anode electrode 24, for example, on the inner peripheral surface of the grounded anode electrode 24. Adhere to. Thereby, discharge | release in the vacuum chamber 10 of the said large sized particle and neutral particle is suppressed.

  As described above, charged particles (platinum (Pt) ions) having a particle diameter of a predetermined value or less are mainly emitted from the arc evaporation source 13. Therefore, these fine charged particles reach and adhere to the carbon-based material layer C formed on the surface of the substrate W arranged to face the vapor deposition source 13. During vapor deposition, the substrate W is rotated by driving the motor 19 together with the stage 17, and a film or a layer made of the fine particles is uniformly formed on the surface of each substrate W by charged particles emitted from the vapor deposition source 13.

  Therefore, in the present embodiment, the voltage supply of the trigger power supply 26 to the vapor deposition material 21 and the trigger electrode 22 is controlled by the control unit 50. That is, the control unit 50 connects the filament 41 of each electron supply source 40 to the power supply unit 42 in synchronization with the transmission of the trigger voltage to the vapor deposition material 21 and the trigger electrode 22, thereby transferring the thermoelectrons into the vacuum chamber 10. Supply. In this way, the generation of the catalyst metal evaporation particles and the supply of electrons in the arc vapor deposition source 13 are synchronized, thereby eliminating the positive charge of the platinum fine particles accumulated in the carbon-based material layer C of the substrate W. .

  Therefore, according to the present embodiment, it is possible to suppress the charge-up of the surface of the substrate W and prevent arcing between the vapor deposition particles, between the particles and the substrate, or between the particles and the stage 17. This makes it possible to stably and appropriately manufacture a catalyst material in which catalytic metal fine particles are supported on a carbon-based material without generating discharge traces.

  The discharge of the arc evaporation source 13 is generated in a pulse manner. The electrons supplied from the electron supply source 40 can be set to an amount sufficient to cancel the charge amount of the metal fine particle group generated by one arc discharge in the arc vapor deposition source 13. By supplying the same amount of electrons for each discharge of the arc evaporation source 13, the charged charge of the metal fine particles can be efficiently eliminated.

  Here, an example in which two electron supply sources 40 are installed at symmetrical positions with respect to the stage 17 will be described. The stage 17 was a stainless disk having a diameter of 100 mm and a thickness of 10 mm. The electron supply source 40 was arranged at a position 5 cm away from the stage 17. As the filament 41, a tungsten filament having a wire diameter of 0.5 mm and a length of 40 mm was used. The power supplied to the filament 41 was 11 V × 0.6 A (6.6 W). When electrons are generated from the electron supply source 40 under the above conditions, the capacitor capacity of the arc deposition source 13 is 1080 μF, the arc power source is 100 V, and 0.2 mg of platinum fine particles are treated on the surface of the carbon-based material layer by the discharge of 30,000 times. As a result of conducting an experiment deposited on the substrate, it was confirmed that the generation of discharge marks on the substrate surface was prevented.

  In the present embodiment, the supply of electrons from the electron supply source 40 is synchronized with the transmission of the trigger voltage by the control unit 50 between the trigger electrode 22 and the vapor deposition material 21 in the arc vapor deposition source 13. This facilitates the supply control of electrons from the electron supply source 40. Furthermore, it is possible to unitize the discharge control system of the arc evaporation source 13 and the control system of the electron supply source 40.

  Furthermore, according to the present embodiment, it is possible to suppress the charge-up of the surface of the substrate W without reducing the power supply voltage of the arc evaporation source 13 or reducing the capacitor capacity. Thereby, catalyst fine particles having a desired particle size can be generated by the arc vapor deposition source 13, and a high-quality catalyst material can be manufactured.

[Second Embodiment]
FIG. 2 is a schematic configuration diagram of a vacuum arc vapor deposition apparatus 2 according to the second embodiment of the present invention. In the figure, portions corresponding to those of the first embodiment described above are denoted by the same reference numerals, and detailed description thereof is omitted.

  The present embodiment is different from the above-described first embodiment in that an electron supply source 45 composed of a cold cathode source is provided. The electron supply source 45 is a Spindt-type or carbon nanotube (CNT) -type cold cathode source, and includes a cathode 46, an anode 47, and a power supply unit 48. The anode 47 is connected (grounded) to a ground potential. The power supply unit 48 is configured by a DC power supply of 3 kV to 10 kV, for example. By using a cold cathode source as the electron supply source 45, the electron supply source 45 can have a relatively simple configuration, and the amount of generated electrons can be easily controlled.

  The vacuum arc vapor deposition apparatus 2 of the present embodiment includes a control unit 51 that emits electrons from the electron supply source 45 in synchronization with the discharge control between the vapor deposition material 21 and the anode electrode 24 in the arc vapor deposition source 13. Yes. For example, switching control between the power supply unit 48 and the cathode 46 is used for drive control of the electron supply source 40 by the control unit 50.

  The control unit 51 supplies thermoelectrons into the vacuum chamber 10 by electrically connecting the cathode 46 to the power supply unit 48 in synchronization with the transmission of the trigger voltage to the vapor deposition material 21 and the trigger electrode 22. Specifically, while the arc power source is generated in the arc deposition source 13 (for example, 200 to 500 microseconds), electrons are emitted from the electron supply source 45. In this way, the generation of the catalyst metal evaporation particles and the supply of electrons in the arc vapor deposition source 13 are synchronized, thereby eliminating the positive charge of the platinum fine particles accumulated in the carbon-based material layer C of the substrate W. .

  Therefore, according to the vacuum arc vapor deposition apparatus 2 of the present embodiment, it is possible to suppress the charge-up of the surface of the substrate W and prevent arcing between the vapor deposition particles, between the particles and the substrate, or between the particles and the stage 17. It becomes possible. This makes it possible to stably and appropriately manufacture a catalyst material in which catalytic metal fine particles are supported on a carbon-based material without generating discharge traces.

  In particular, according to the present embodiment, the power required to generate electrons from the electron supply source 45 can be reduced as compared with the hot cathode source type electron supply source 40 in the first embodiment described above. it can. For example, in the present embodiment, the power necessary to obtain an amount of electrons equivalent to the amount of electrons generated by applying the power of the above condition to the tungsten filament having the above configuration is 3 kV × 1 mA × 1 ms (milliseconds). It will be about.

  Although the embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the scope of the present invention. .

  For example, in the above embodiment, an example in which a hot cathode source or a cold cathode source is used as an electron supply source for supplying electrons to the inside of the vacuum chamber 10 has been described. However, the configuration of the electron supply source is not limited thereto. I can't. For example, the electron supply source may be constituted by a plasma generation source and an extraction electrode for extracting electrons from the generated plasma.

  Moreover, although the above embodiment demonstrated the example in which the single arc vapor deposition source 13 was installed with respect to the vacuum chamber 10, not only this but the several arc vapor deposition source 13 was installed in the common vacuum chamber The present invention is also applicable to the deposited vapor deposition apparatus.

  Furthermore, the vapor deposition material 21 in the arc vapor deposition source 21 and the surface properties of the substrate W are not limited to the above-described embodiments.

It is a schematic block diagram of the vacuum arc vapor deposition apparatus by the 1st Embodiment of this invention. It is a schematic block diagram of the vacuum arc vapor deposition apparatus by the 2nd Embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1, 2 Vacuum arc vapor deposition apparatus 10 Vacuum tank 13 Arc vapor deposition source 21 Vapor deposition material 22 Trigger electrode 23 Insulation member 24 Anode electrode (tubular electrode)
25 Power supply unit 26 Trigger power supply (first DC power supply)
27 Arc power supply (second DC power supply)
28 Capacitor unit 30 Vacuum exhaust system 40, 45 Electron supply source 41 Filament 42 Power supply unit 46 Cathode 47 Anode 48 Power supply unit 50, 51 Control unit

Claims (6)

A cylindrical insulating member, a vapor deposition material made of a metal having catalytic activity disposed on the outer peripheral portion of the insulating member, a trigger electrode disposed on the outer peripheral portion of the insulating member, and concentric around the trigger electrode A method for producing a catalyst material using an arc vapor deposition source having a cylindrical electrode disposed on
Prepare a substrate with a carbon-based material layer formed on the surface,
Under a reduced pressure atmosphere, fine particles of the vapor deposition material generated by discharge control between the vapor deposition material and the cylindrical electrode in the arc vapor deposition source are attached to the surface of the carbon-based material layer,
A method for producing a catalyst material, wherein electrons are supplied from an electron supply source to the reduced-pressure atmosphere in synchronization with the discharge control in the arc evaporation source. It is a manufacturing method of the catalyst material of Claim 1, Comprising:
Supply of electrons from the electron supply source is synchronized with transmission of a trigger voltage to the trigger electrode and the vapor deposition material in the arc vapor deposition source. It is a manufacturing method of the catalyst material of Claim 2, Comprising:
The carbon-based material layer is a graphite nanofiber layer or a carbon nanotube layer,
The said vapor deposition material is platinum or its alloy. The manufacturing method of the catalyst material. A vacuum chamber;
A cylindrical insulating member, a vapor deposition material made of a metal having catalytic activity disposed on the outer peripheral portion of the insulating member, a trigger electrode disposed on the outer peripheral portion of the insulating member, and concentric around the trigger electrode An arc vapor deposition source installed inside the vacuum chamber,
A substrate support surface installed inside the vacuum chamber so as to face the arc evaporation source;
An electron supply source for supplying electrons into the vacuum chamber;
A vacuum arc deposition apparatus comprising: a control unit that emits electrons from the electron supply source in synchronization with discharge control between the deposition material and the cylindrical electrode in the arc deposition source. The vacuum arc deposition apparatus according to claim 4,
The arc evaporation source is
A first DC power source connected between the vapor deposition material and the trigger electrode, a second DC power source connected between the vapor deposition material and the cylindrical electrode, and the second DC power source. A power supply unit including a capacitor unit connected in parallel to the
The control unit drives the power supply unit and the electron supply source in synchronization with each other. The vacuum arc deposition apparatus according to claim 5,
The electron supply source is a hot cathode source or a cold cathode source.

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