JP2009276721A - Electro-optical device and its test method, and electronic equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electro-optical device and its test method, and electro-optical equipment, for easily testing an auxiliary wiring line at a low cost, and displaying a clear image for a long period of time without causing faults such as lighting unevenness. <P>SOLUTION: An organic electroluminescent (EL) display device (an electro-optical device) comprises: a circuit layer including thin film transistors and a light emitting element including a light emitting layer 110 held between a pixel electrode 23 electrically connected to the circuit layer and a cathode 50, on a transparent substrate 20; an auxiliary wiring line layer 311 having light shielding property on the cathode 50; and a light shielding layer 313 at a position corresponding to the allowable film deposition layer 312 of the auxiliary wiring line layer 311 on the transparent substrate 20. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to an electro-optical device, an inspection method thereof, and an electronic apparatus.

In recent years, a multi-layer organic electroluminescence (EL) display device in which a light-emitting layer (electro-optic layer) or the like is formed of an organic thin film has been developed as a self-luminous flat display type electro-optic device. (For example, refer to Patent Document 1).
There are two types of organic EL display devices, a top emission type and a bottom emission type, which have excellent characteristics such as being thin, lightweight, flexible, and capable of being manufactured using an ink jet method. Applications in various fields such as electronic paper are being promoted.

By the way, in a conventional organic EL display device, particularly a top emission type organic EL display device, since a transparent electrode material such as indium tin oxide (ITO) is used for the cathode, the electrical resistance of the cathode itself. It is difficult to make small. Therefore, in order to reduce the electrical resistance of the cathode, auxiliary wiring made of a metal film is provided on the upper side or the lower side of the cathode.
As such an auxiliary wiring, for example, there is a configuration in which a cathode is formed on the top of the bank layer in the circuit area at the periphery of the actual display area, and the auxiliary wiring is provided on the cathode.
This auxiliary wiring is formed by vapor deposition before or after the formation of the cathode. The position of the auxiliary wiring pattern is shifted due to mask accuracy, alignment accuracy, adhesion to the substrate, etc. Therefore, a tolerance is set for the auxiliary wiring, and an allowable area of the auxiliary wiring is set on the cathode according to this tolerance. An auxiliary wiring is formed in the permissible area.
JP 2005-85488 A

By the way, in the conventional organic EL display device, since the auxiliary wiring is usually formed in the allowable area, the auxiliary wiring does not protrude from the allowable area, but sudden fluctuation occurs during the formation of the auxiliary wiring. If the auxiliary wiring protrudes from the permissible area, the auxiliary wiring greatly deviates from the cathode, and as a result, the electrical resistance of the cathode does not decrease, causing problems such as uneven lighting in the light emitting element. There was a problem.
In such a case, it is necessary to grasp the situation where a defect has occurred in the production line and stop the production process. However, in the inspection from the film surface side, there are metal patterns other than auxiliary wiring. Therefore, there is a problem that it is difficult to detect only the auxiliary wiring by image recognition. Even if this detection can be realized, the inspection system using the image recognition technique is very expensive, which causes a problem of increasing the manufacturing cost.

  The present invention has been made in order to solve the above-described problems, and the auxiliary wiring can be inspected easily and at low cost, and there is no possibility of causing problems such as uneven lighting, and a clear image can be obtained. It is an object of the present invention to provide an electro-optical device that can display for a long time, an inspection method thereof, and an electronic apparatus.

In order to solve the above problems, the present invention employs the following electro-optical device, an inspection method thereof, and an electronic apparatus.
That is, the electro-optical device of the present invention has a circuit layer including a thin film transistor and a light emitting layer sandwiched between the first electrode and the second electrode electrically connected to the circuit layer on a transparent substrate. A light-shielding auxiliary wiring layer electrically connected to the second electrode, and light shielding at a position corresponding to an allowable film formation region of the auxiliary wiring layer on the transparent substrate. A layer is provided.

  In the electro-optical device of the present invention, since the light shielding layer is provided at a position corresponding to the allowable film forming region of the auxiliary wiring layer on the transparent substrate, the auxiliary wiring layer is observed from the transparent substrate side through the light shielding layer. Thus, it is possible to easily determine whether or not the auxiliary wiring layer is formed in the allowable film formation region. Therefore, it is possible to easily find a defect in the manufacturing process of the auxiliary wiring layer, and to improve the inspection accuracy and inspection efficiency of the auxiliary wiring layer. As a result, it is possible to improve the yield in the manufacturing process of the product, and to provide an electro-optical device that is free from problems such as uneven lighting.

The electro-optical device according to the present invention is characterized in that a second light shielding layer is provided on the transparent substrate and at a position adjacent to the light shielding layer.
In the electro-optical device of the present invention, since the second light shielding layer is provided on the transparent substrate and at a position adjacent to the light shielding layer, the auxiliary wiring layer is provided via the light shielding layer and the second light shielding layer. When observing from the transparent substrate side, the position of the auxiliary wiring layer can be easily confirmed, and it can be more easily determined whether or not the auxiliary wiring layer is formed in the allowable film formation region. Therefore, the trouble in the manufacturing process of the auxiliary wiring layer can be found more easily, and the inspection accuracy and inspection efficiency of the auxiliary wiring layer can be further improved.

  According to an electro-optical device inspection method of the present invention, a circuit layer including a thin film transistor and a light emitting layer sandwiched between a first electrode and a second electrode electrically connected to the circuit layer are formed on a transparent substrate. Provided with a light-shielding auxiliary wiring layer that is electrically connected to the second electrode, and a light is provided at a position corresponding to an allowable film formation region of the auxiliary wiring layer on the transparent substrate. An inspection method for an electro-optical device provided with a shielding layer, characterized in that the auxiliary wiring layer is observed from the transparent substrate side through the light shielding layer and the quality of the auxiliary wiring layer is determined. .

  In the inspection method for the electro-optical device according to the present invention, the auxiliary wiring layer is observed from the transparent substrate side through the light shielding layer and the quality of the auxiliary wiring layer is determined. It is possible to easily determine whether or not a film is formed inside. Therefore, the inspection accuracy and inspection efficiency in the auxiliary wiring layer manufacturing process can be improved, and the yield in the product manufacturing process can be improved.

An electronic apparatus according to the present invention includes the electro-optical device according to the present invention.
Since the electronic apparatus according to the present invention includes the electro-optical device according to the present invention, there is no risk of problems such as uneven lighting, and the image quality can be maintained at high quality. Therefore, a clear image can be displayed for a long time.

The best mode for carrying out the electro-optical device, the inspection method thereof, and the electronic apparatus of the invention will be described.
Here, as an electro-optical device, an electroluminescent material which is an example of an electro-optical material, in particular, an organic EL display device using an organic electroluminescence (EL) material will be described.

“First Embodiment”
FIG. 1 is a diagram showing a wiring structure of an organic EL display device (electro-optical device) 1 according to this embodiment. The organic EL display device 1 is an active device using a thin film transistor (TFT) as a switching element. It is a matrix type organic EL display device.

The organic EL display device 1 includes a plurality of scanning lines 101 parallel to each other, a plurality of signal lines 102 extending in a direction perpendicular to each scanning line 101, and a plurality of power supplies extending in parallel to each signal line 102. Lines 103 are respectively wired, and pixel regions X are provided in the vicinity of intersections of the scanning lines 101 and the signal lines 102.
A signal line driving circuit 100 including a shift register, a level shifter, a video line, and an analog switch is connected to the signal line 102. Further, a scanning line driving circuit 80 having a shift register and a level shifter is connected to the scanning line 101.

  Further, in each pixel region X, a switching TFT 112 to which a scanning signal is supplied to the gate electrode via the scanning line 101, and a storage capacitor for holding a pixel signal supplied from the signal line 102 via the switching TFT 112. 113, a driving TFT 123 to which a pixel signal held by the holding capacitor 113 is supplied to the gate electrode, and a driving current from the power supply line 103 when electrically connected to the power supply line 103 via the driving TFT 123 Is provided with a pixel electrode (anode: first electrode) 23 into which light flows, and a light emitting layer 110 sandwiched between the pixel electrode 23 and a cathode (second electrode) 50. The pixel electrode 23, the cathode 50, and the light emitting layer 110 constitute a light emitting element (organic EL element).

  According to the organic EL display device 1, when the scanning line 101 is driven to turn on the switching TFT 112, the potential of the signal line 102 at this time is held in the holding capacitor 113, and according to the state of the holding capacitor 113. Thus, the on / off state of the driving TFT 123 is determined. Then, a current flows from the power supply line 103 to the pixel electrode 23 through the channel of the driving TFT 123, and further a current flows to the cathode 50 through the light emitting layer 110. Therefore, the light emitting layer 110 emits light according to the amount of current flowing therethrough.

Next, a specific configuration of the organic EL display device 1 will be described.
FIG. 2 is a plan configuration diagram showing three pixel regions X of R, G, and B constituting one display unit of the organic EL display device 1 of the present embodiment, and FIG. 3 is a line AA ′ in FIG. FIG. 4 is a partial cross-sectional configuration diagram taken along the line BB ′ and the line CC ′. In the organic EL display device of the present embodiment, one display unit is constituted by the three pixel regions X shown in FIG.

  As shown in FIG. 2, the organic EL display device 1 includes a plurality (two in the drawing) of scanning lines 101 and a plurality (three in the drawing) of signal lines 102 extending orthogonally to these scanning lines 101. The region surrounded by the scanning line 101 and the signal line 102 corresponds to the pixel region X. In the pixel region X, a switching TFT 112 is provided corresponding to the intersection of the scanning line 101 and the signal line 102, and a driving TFT 123 and a storage capacitor 113 are connected to the switching TFT 112. In addition, a power supply line 103 extending in a direction along the signal line 102 is provided at a position opposite to the signal line 102 with the light emitting layer 110 interposed therebetween.

The pixel area X is divided into an actual display area 4 for displaying an image and a circuit area 5 arranged around the actual display area 4.
In the actual display area 4, display areas R, G, and B each having a pixel electrode are formed in a matrix in such a manner as to be spaced apart in the AA ′ direction, the BB ′ direction, and the CC ′ direction.

  As shown in FIGS. 2 and 3, the organic EL display device 1 is a light emitting element (organic) including a pixel electrode (anode) 23, a light emitting layer 110, and a cathode 50 in an actual display region 4 on a transparent substrate 20. A large number of EL elements are formed in a matrix, and an auxiliary wiring layer 311 having a light shielding property electrically connected to the cathode 50 is formed on the cathode 50 of the bank layer 310 in the circuit region 5 on the transparent substrate 20. A light shielding layer 313 is formed below the auxiliary wiring layer 311 and at a position corresponding to the allowable film forming region 312 of the auxiliary wiring layer 311 on the transparent substrate 20. Further, a buffer layer 210, a filter 211, a gas barrier layer 30 and the like are formed to cover them.

The organic EL display device 1 is a top emission type that extracts light emitted from the gas barrier layer 30 side, but observes the auxiliary wiring layer 311 through the light shielding layer 313 to determine whether the auxiliary wiring layer 311 is good or bad. Since it is necessary, a transparent substrate 20 such as a glass substrate, a quartz substrate, a resin substrate (plastic sheet, plastic film, etc.) is used as the substrate.
On the transparent substrate 20, a circuit unit 11 including a driving TFT 123 for driving the pixel electrode 23 is formed, and a large number of light emitting elements (organic EL elements) are provided in a matrix on the circuit unit 11. It has been.

The light emitting layer 110 is specifically an electroluminescence layer, and may have a structure including a carrier injection layer or a carrier transport layer such as a hole injection layer, a hole transport layer, an electron injection layer, and an electron transport layer, Furthermore, the structure provided with the hole blocking layer (hole blocking layer) and the electron blocking layer (electron blocking layer) may be sufficient.
In the light emitting layer 110, this light emitting element emits light by combining holes injected from a hole transport layer (not shown) and electrons from the cathode 50 in the light emitting layer 110.

  As a material for forming the light emitting layer 110, a known light emitting material capable of emitting fluorescence or phosphorescence can be used. Specifically, (poly) fluorene derivative (PF), (poly) paraphenylene vinylene derivative (PPV), polyphenylene derivative (PP), polyparaphenylene derivative (PPP), polyvinyl carbazole (PVK), polythiophene derivative, polymethyl A polysilane organic material such as phenylsilane (PMPS) is preferably used.

These luminescent materials are low molecular weight materials such as perylene dyes, coumarin dyes, rhodamine dyes, or low molecular weight materials such as rubrene, perylene, 9,10-diphenylanthracene, tetraphenylbutadiene, nile red, coumarin 6, and quinacridone. It can also be used by doping a molecular material.
In addition, it replaces with the polymeric material mentioned above, a conventionally well-known low molecular material can also be used.
Moreover, it is good also as a structure which provided the electron injection layer on such a light emitting layer 110 as needed.

The pixel electrode 23 does not need to be transparent because the organic EL display device 1 of the present embodiment is a top emission type, and thus is formed by appropriately selecting from various conductive materials.
As shown in FIGS. 2 to 3, the cathode 50 has an area larger than the total area of the actual display region 4 and the circuit region 5, and is formed so as to cover the actual display region 4 and the circuit region 5. Thus, the light emitting layer 110 and the bank layer 310 are formed on the transparent substrate 20 so as to cover the upper surfaces of the light emitting layer 110 and the bank layer 310 and the wall surfaces forming the outer side of the bank layer 310.
The cathode 50 is connected to a drive IC (drive circuit) via a cathode wiring (not shown) formed on the outer periphery of the transparent substrate 20 outside the bank layer 310.

As the material of the cathode 50, since the organic EL display device 1 of the present embodiment is a top emission type, it needs to be light transmissive, and therefore, a transparent conductive material is used. As this transparent conductive material, tin-added indium oxide (ITO) is suitable, but besides this, for example, zinc-added indium oxide (IZO / Indium Zinc Oxide) (registered) An indium oxide / zinc oxide-based amorphous transparent conductive film such as a trademark can be used.
In this embodiment, ITO is used.

In the cathode 50, a cathode protective layer (not shown) made of an inorganic compound such as a silicon compound or a metal compound may be formed thereon. By forming this cathode protective layer on the cathode 50, it is possible to satisfactorily prevent oxygen and the like from entering the cathode 50 even during the manufacturing process.
In addition, when forming a cathode protective layer, it is preferable to form in thickness of about 10 nm to 300 nm to the insulating layer 284 of the outer peripheral part of the base | substrate 200. FIG.

An auxiliary wiring layer 311 having a light shielding property and electrically connected to the cathode 50 is formed in the allowable film forming region 312 of the auxiliary wiring layer, which is a band-shaped region on the cathode 50.
The width of the auxiliary wiring layer 311 needs to be completely within the allowable film forming region 312 when the auxiliary wiring layer 311 is formed with a predetermined tolerance. % To 70%.
The auxiliary wiring layer 311 may be made of any material that reduces the electrical resistance of the cathode 50 when connected to the cathode 50, such as silver, silver-palladium and other silver alloys, aluminum, copper, nickel, and the like. Metal materials are preferred.

  The thickness of the auxiliary wiring layer 311 is preferably 10 nm or more and 500 nm or less. The reason for this is that if the thickness is less than 10 nm, there may be a portion that partially penetrates due to a film defect or film thickness variation, and as a result, the uniformity of the wiring layer may be impaired. On the other hand, if the thickness exceeds 500 nm, cracking due to stress may occur.

Further, a light shielding layer 313 is formed below the auxiliary wiring layer 311 and at a position corresponding to the allowable film forming region 312 of the auxiliary wiring layer 311 on the transparent substrate 20.
The width of the light shielding layer 313 can be determined by observing the auxiliary wiring layer 311 through the light shielding layer 313 and determining whether or not the auxiliary wiring layer 311 is formed with a predetermined tolerance. It is necessary to match the width of the film region 312.
The light shielding layer 313 may be made of a material that is opaque to visible light, and a silver alloy such as silver or silver-palladium, or a metal material such as aluminum, copper, or nickel is preferable.
In order to improve the determination accuracy of the light shielding layer 313, it is preferable to use a black material.

  The thickness of the light shielding layer 313 is preferably 10 nm or more and 500 nm or less. The reason is that if the thickness is less than 10 nm, there may be a partial penetration due to film defects or variations in film thickness. As a result, the light shielding property may be insufficient. On the other hand, if the thickness exceeds 500 nm, cracking due to stress may occur.

  The light shielding layer 313 may have a laminated structure, for example, a structure in which a plurality of materials having different compositions among the metal materials described above are laminated. Specifically, a two-layer structure in which silver and silver-palladium alloy are laminated in this order from the cathode 50 side, or a two-layer structure in which aluminum and copper are laminated in this order from the cathode 50 side can be cited.

  Accordingly, when the auxiliary wiring layer 311 is observed through the light shielding layer 313, the auxiliary wiring layer 311 is in the allowable film forming region 312 if the auxiliary wiring layer 311 is completely hidden by the light shielding layer 313. Therefore, it can be determined as a non-defective product. On the other hand, if a part of the auxiliary wiring layer 311 appears from one side of the light shielding layer 313, it can be determined that the auxiliary wiring layer 311 is displaced from the allowable film formation region 312. it can.

  On the cathode 50 and the auxiliary wiring layer 311, a buffer layer 210 is provided in a range wider than the bank layer 221 and covering the cathode 50, and the actual display region 4 on the buffer layer 210 has a filter. 211 is formed, and the gas barrier layer 30 is formed so as to cover the whole.

The buffer layer 210 has a function of relieving stress generated by warpage and volume change on the substrate side including the transparent substrate 20 and the circuit unit 11 and preventing the cathode 50 from peeling from the unstable bank layer 310. In addition, it is formed so as to fill the convex and concave portions of the cathode 50 which are convex and concave due to the influence of the shape of the bank layer 310 located on the lower side, and the upper surface thereof is made substantially flat.
Since the upper surface of the buffer layer 210 is substantially flattened, the hard gas barrier layer 30 formed on the buffer layer 210 is also flattened, and there is no portion where stress is concentrated. Thereby, generation | occurrence | production of the crack in the gas barrier layer 30 can be prevented.

The gas barrier layer 30 is for preventing oxygen and moisture from entering inside from the outside, thereby preventing the entry of oxygen and moisture into the cathode 50 and the light emitting layer 110, and the cathode 50 due to oxygen and moisture. And deterioration of the light emitting layer 110 are suppressed.
The gas barrier layer 30 is made of, for example, an inorganic compound, and is preferably a silicon compound. Examples of the silicon compound include silicon nitride, silicon oxynitride, silicon oxide (silica and the like), and the like.
Examples of inorganic compounds other than the silicon compound include aluminum compounds such as aluminum nitride, aluminum oxynitride, and aluminum oxide (such as alumina), tantalum compounds such as tantalum oxide, and titanium compounds such as titanium oxide.

  The gas barrier layer 30 needs to be light transmissive because the organic EL display device 1 of the present embodiment is a top emission type. Here, the light transmittance in the visible light region is set to, for example, 80% or more by appropriately adjusting the material and film thickness.

In the organic EL display device 1 of the present embodiment, a filter 211R that transmits only red light to the red display region R so that the light emitting layer 110 emits light corresponding to the three primary colors of light in order to perform color display, A filter 211G that transmits only green light is provided in the green display region G, and a filter 211B that transmits only blue light is provided in the blue display region B, and color display is performed by these three types of display regions R, G, and B. Pixels are configured.
Further, a black matrix (BM, not shown) in which metal chromium is formed by sputtering or the like is formed in the circuit region 5 which is a boundary between these three types of display regions R, G, and B.

Next, a method for manufacturing the organic EL display device 1 according to this embodiment will be described.
In addition, since it is not different from a prior art from the process of forming the circuit part 11 on the surface of the transparent substrate 20 by the inkjet method, it abbreviate | omits description.

First, a mask having an opening having the same shape as the allowable film formation region 312 is placed at a position corresponding to the allowable film formation region 312 of the auxiliary wiring layer on the transparent substrate 20. In addition, a metal material such as silver, a silver alloy such as silver-palladium, aluminum, copper, or nickel is deposited by a physical vapor deposition method (PVD) such as a vacuum evaporation method or a sputtering method. Thereby, the light shielding layer 313 is formed.
Next, the circuit portion 11, the pixel electrode 23, the bank layer 310, the light emitting layer 110, and the like are formed on the surface of the transparent substrate 20 including the light shielding layer 313 by a conventionally known method. One pixel for performing color display is constituted by the regions R, G, and B.

Next, for example, by a physical vapor deposition method (PVD) such as a vacuum evaporation method or a sputtering method so as to cover the upper surfaces of the light emitting layer 110 and the bank layer 310 and the wall surface constituting the outer portion of the bank layer 310. An ITO film is formed and used as the cathode 50.
In order to form a cathode protective layer (not shown) such as titanium oxide on the cathode 50, a physical vapor deposition method (PVD) such as a vacuum evaporation method is used.

  Next, a mask having an opening having the same shape as that of the auxiliary wiring layer 311 is placed in the allowable film forming region 312 of the auxiliary wiring layer of the cathode 50, and a vacuum deposition method, a sputtering method, or the like is formed on the cathode 50 in the opening. A metal material such as silver, a silver alloy such as silver-palladium, aluminum, copper, or nickel is deposited by physical vapor deposition (PVD). Thereby, the auxiliary wiring layer 311 is formed.

Next, on the cathode 50 including the auxiliary wiring layer 311, for example, using a buffer layer coating liquid including a main component such as an epoxy resin, an acrylic resin, and a silicone resin, a photopolymerization reaction agent, an organic solvent, and the like. The buffer layer 210 is formed by a wet process such as an inkjet method.
Instead of the ink jet method, the buffer layer coating liquid may be applied by a slit coat (or curtain coat) method.

Next, the filter 211 is formed in the actual display area 4 on the buffer layer 210.
In the organic EL display device 1, a filter 211 </ b> R that transmits only red light is provided in the red display region R so that the light emitting layer 110 emits light corresponding to the three primary colors of light in order to perform color display. A filter 211G that transmits only green light is formed in G, and a filter 211B that transmits only blue light is formed in the blue display region B, respectively. These three types of display regions R, G, and B constitute one pixel that performs color display.

Next, the gas barrier layer 30 is formed so as to cover the buffer layer 210 including the filter 211, that is, to cover all portions of the cathode 50 exposed on the transparent substrate 20.
Here, as a method of forming this gas barrier layer 30, for example, a film is formed by physical vapor deposition (PVD) such as sputtering or ion plating, and then chemical vapor deposition such as plasma CVD is performed. Preferably, the film is formed by phase deposition (CVD).

A surface protective layer may be provided on the gas barrier layer 30 via an adhesive layer.
The surface protective layer is formed, for example, by applying an adhesive to the gas barrier layer 30 so as to have a substantially uniform thickness by a slit coating method or the like, and bonding the thin surface protective layer on the adhesive layer. Thus, it can be formed.
Since this surface protective layer has functions such as pressure resistance, abrasion resistance, light reflection preventing property, gas barrier property, and ultraviolet blocking property, by providing this surface protective layer on the gas barrier layer 30, the light emitting layer 110 and the cathode 50 as well as the gas barrier layer 30 can be protected. Therefore, the lifetime of the light emitting element can be extended.
As described above, the organic EL display device 1 can be manufactured.

  As described above, according to the organic EL display device 1 of the present embodiment, the auxiliary wiring layer 311 having a light shielding property that is electrically connected to the cathode 50 is formed on the cathode 50, and this auxiliary wiring layer is formed. Since the light shielding layer 313 is formed below the layer 311 and at a position corresponding to the allowable film forming region 312 of the auxiliary wiring layer 311 on the transparent substrate 20, the auxiliary wiring layer 311 is disposed on the transparent substrate 20 side via the light shielding layer 313. By observing from the above, it is possible to easily determine whether or not the auxiliary wiring layer 311 is uneven, that is, whether or not the auxiliary wiring layer 311 is formed in the allowable film formation region 312. Therefore, the trouble in the manufacturing process of the auxiliary wiring layer 311 can be easily found, the inspection accuracy and the inspection efficiency of the auxiliary wiring layer 311 can be improved, and the yield in the manufacturing process of the product can be improved.

When the auxiliary wiring layer 311 is observed from the transparent substrate 20 side through the light shielding layer 313, an image is projected on an external monitor using a light source and a camera, and the auxiliary wiring layer 311 is allowed to be formed based on this image. It may be determined whether or not a film is formed in the region 312, and it is automatically determined whether or not the auxiliary wiring layer 311 is formed in the allowable film forming region 312 using image processing software. Also good.
As a method for forming the light shielding layer 313, in addition to the above-described method of depositing the metal material, a method of forming with a semiconductor layer, a method of forming with a source / drain electrode, or the like can be used.

“Second Embodiment”
FIG. 4 is a plan configuration diagram showing three pixel regions X of R, G, and B constituting one display unit of the organic EL display device 401 of the present embodiment, and FIG. 5 is an AA ′ line in FIG. FIG. 4 is a partial cross-sectional configuration diagram taken along the line BB ′ and the line CC ′.
The organic EL display device 401 of the present embodiment is different from the organic EL display device 1 of the first embodiment in that a predetermined distance from the light shielding layer 313 is provided on the transparent substrate 20 and adjacent to both sides of the light shielding layer 313. (Second) light shielding layers 402 and 403 are provided at intervals of.

  In the organic EL display device 401, the light shielding layers 402 and 403 are provided on the transparent substrate 20 and adjacent to both sides of the light shielding layer 313 at a predetermined distance from the light shielding layer 313. A gap formed between the light shielding layer 313 and each of the light shielding layers 402 and 403 becomes a very narrow strip-shaped opening on both sides of the allowable film formation region 312 of the auxiliary wiring layer 311, and other than the auxiliary wiring layer 311. The amount of information is reduced, and it is possible to more easily determine whether or not the auxiliary wiring layer 311 is uneven, that is, whether or not the auxiliary wiring layer 311 is formed in the allowable film formation region 312.

Therefore, when the auxiliary wiring layer 311 is observed from the transparent substrate 20 side through the light shielding layer 313 and the light shielding layers 402 and 403, the position of the auxiliary wiring layer 311 is confirmed by the light shielding layer 313 and the light shielding layers 402 and 403. This makes it easier to determine whether or not the auxiliary wiring layer 311 is formed in the allowable film formation region 312.
Therefore, a defect in the manufacturing process of the auxiliary wiring layer 311 can be found more easily, and the inspection accuracy and inspection efficiency of the auxiliary wiring layer 311 can be further improved.

Next, the electronic apparatus of the present invention will be described. The electronic apparatus has the above-described organic EL display device (electro-optical device) 1 (401) as a display unit, and specifically, the one shown in FIG.
FIG. 6A is a perspective view showing an example of a mobile phone. In FIG. 6A, a mobile phone 1000 includes a display unit 1001 using the organic EL display device 1 (401) described above.
FIG. 6B is a perspective view illustrating an example of a wristwatch type electronic device. In FIG. 6B, a timepiece 1100 includes a display unit 1101 using the organic EL display device 1 (401) described above.
FIG. 6C is a perspective view illustrating an example of a portable information processing apparatus such as a word processor or a personal computer. 6C, the information processing apparatus 1200 includes an input unit 1201 such as a keyboard, a display unit 1202 using the above-described organic EL display device 1 (401), and an information processing apparatus body (housing) 1203. .
Each of the electronic devices shown in FIGS. 6A to 6C includes the display units 1001, 1101, and 1202 having the above-described organic EL display device (electro-optical device) 1 (401). The life of the light-emitting element of the organic EL display device constituting the above has been increased.

It is a figure which shows the wiring structure of the organic electroluminescence display of the 1st Embodiment of this invention. It is a plane block diagram which shows the pixel area | region of the organic electroluminescence display of the 1st Embodiment of this invention. FIG. 3 is a partial cross-sectional configuration diagram taken along lines A-A ′, B-B ′, and C-C ′ in FIG. 2. It is a plane block diagram which shows the pixel area | region of the organic electroluminescence display of the 2nd Embodiment of this invention. FIG. 5 is a partial cross-sectional configuration diagram taken along line A-A ′, line B-B ′, and line C-C ′ of FIG. 4. It is a perspective view which shows an example of the electronic device of this invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1,401 ... Display apparatus (electro-optical device), 23 ... Pixel electrode (first electrode), 30 ... Gas barrier layer, 50 ... Cathode (second electrode), 110 ... Light emitting layer (electro-optical layer), 20 ... Transparent substrate 311 ... Auxiliary wiring layer, 312 ... Allowable film forming region, 313 ... Light shielding layer, 402, 403 ... Light shielding layer.

Claims (4)

On a transparent substrate, a circuit layer including a thin film transistor, and a light emitting element having a light emitting layer sandwiched between a first electrode and a second electrode electrically connected to the circuit layer,
Providing a light-shielding auxiliary wiring layer electrically connected to the second electrode;
An electro-optical device, wherein a light shielding layer is provided at a position corresponding to an allowable film formation region of the auxiliary wiring layer on the transparent substrate.   The electro-optical device according to claim 1, wherein a second light shielding layer is provided on the transparent substrate and at a position adjacent to the light shielding layer. On a transparent substrate, a circuit layer including a thin film transistor, and a light emitting element having a light emitting layer sandwiched between a first electrode and a second electrode electrically connected to the circuit layer,
Providing a light-shielding auxiliary wiring layer electrically connected to the second electrode;
An inspection method for an electro-optical device in which a light shielding layer is provided at a position corresponding to an allowable film formation region of the auxiliary wiring layer on the transparent substrate,
An inspection method for an electro-optical device, wherein the auxiliary wiring layer is observed from the transparent substrate side through the light shielding layer to determine whether the auxiliary wiring layer is good or bad.   An electronic apparatus comprising the electro-optical device according to claim 1.

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