JP2009260333A - Oxide film modification method and apparatus therefor, and processing apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To improve film quality of an oxide film deposited by chemical vapor deposition. <P>SOLUTION: An oxide film modification apparatus 1 is provided with: a treatment furnace 3 which stores a substrate 2 with the oxide film (for example, silicon oxide film) deposited thereon by the chemical vapor deposition, and which is supplied with ozone-containing gas; and a light source 4 which irradiates the oxide film on the substrate 2 in the treatment furnace 3 with light having ultraviolet light. The light source 4 performs irradiation with the light concurrently with supply of the ozone-containing gas. Pressure of atmosphere of the ozone-containing gas is controlled, for example, to 0.1-30 Pa. Ozone concentration of the ozone-containing gas is, for example, 0.1-100 vol.%. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a technique for improving the quality of an oxide film on a substrate formed by chemical vapor deposition.

When a thin film transistor is formed on a glass or plastic substrate, a silicon oxide film (hereinafter referred to as a CVD-SiO ₂ film) formed by a chemical vapor deposition method (CVD) is generally used because of limitations on process temperature and film thickness.

  Examples of the chemical vapor deposition method include HTO-CVD (High Temperature Oxide Chemical Vapor Deposition), TEOS-CVD (Tetra Ethyl Ortho Silica Chemical Vapor Deposition), and the like.

However, the CVD-SiO ₂ film is generally inferior to the thermal oxide film and the radical oxide film in insulating properties, and therefore, improvement in film quality is required. In recent years, it has been reported that the density of the CVD-SiO ₂ film is improved by the post-ozone treatment (see Non-Patent Document 1, etc.).

  Also reported is a technology to irradiate UV light from the upper surface of the substrate, and alternately supply organic source material gas and ozone-containing gas to the substrate to form a high quality CVD film with high insulation characteristics at a low temperature of 400 ° C or lower. (See Patent Document 1 etc.).

JP 2006-80474 A

Kazumasa Kawase et al., Proceedings of the 68th Japan Society of Applied Physics, September 2007, No. 2,8a-ZM-7

  A thermal oxide film or a radical oxide film having high insulation characteristics is used as a gate oxide film in a semiconductor process. However, the thermal oxide film and the radical oxide film are limited only to be formed on the Si substrate, and the thermal oxide film requires a high temperature of 700 ° C. or higher, and the radical oxidation is difficult to oxidize thick.

In addition, in a device such as a low-temperature poly-Si TFT, a thermal oxide film or radical oxidation having high insulating characteristics is inappropriate because it is restricted by the device structure and process temperature. Insulating films such as low-temperature poly-Si TFTs are generally CVD-SiO ₂ films. However, the CVD-SiO ₂ film has many oxygen vacancies and is inferior in insulating properties to the thermal oxide film and radical oxide film.

  Therefore, a method of forming a first insulating film of a two-layer structure gate oxide film and suppressing variation in interface state density is adopted. However, the formation of the two-layer structure gate oxide film can be performed through several steps, and is inappropriate in terms of throughput.

  In the oxide film modification method for solving the above problems, an ozone-containing gas is supplied to an oxide film on a substrate formed by chemical vapor deposition, and light having ultraviolet light is irradiated.

  In addition, an oxide film reforming apparatus for solving the above problems includes a processing furnace in which a substrate on which an oxide film is formed by chemical vapor deposition is stored and an ozone-containing gas is supplied, and a substrate on the substrate in the processing furnace. And a light source for irradiating the oxide film with light having ultraviolet light.

  Furthermore, a process apparatus for solving the above-described problems includes a furnace for forming an oxide film on a substrate by a chemical vapor deposition method, and an oxide film reforming apparatus for modifying the oxide film on the substrate supplied from the furnace. The oxide film reforming apparatus stores a substrate on which the oxide film is formed and supplies an ozone-containing gas, and irradiates the oxide film on the substrate in the processing furnace with light having ultraviolet light. A light source is provided.

  According to the above oxide film modification method, apparatus, and process apparatus, the main characteristic of the oxide film that causes a decrease in electrical characteristics due to the action of excited oxygen atoms generated by the reaction between ozone-containing gas and light having ultraviolet light. Since the bond between the component element and the hydroxyl group is reduced, the insulating property, etching resistance, electric thickness, and relative dielectric constant are increased, and the fixed charge is reduced. In particular, according to the process apparatus, the throughput of the substrate having the high-quality oxide film as described above is improved.

  In the process method and the apparatus thereof, the light irradiation may be performed simultaneously with the supply of the ozone-containing gas. It is possible to efficiently generate excited-state oxygen atoms that contribute to the improvement of the etching resistance and insulating properties of the oxide film. In the process method and apparatus therefor, the pressure of the ozone-containing gas atmosphere is controlled to 0.1 to 30 Pa, for example. Further, the ozone concentration of the ozone-containing gas is controlled to, for example, 0.1 to 100 vol%.

  Examples of the chemical vapor deposition method include HTO-CVD and TEOS-CVD. The oxide film may be a silicon oxide film on a substrate formed by chemical vapor deposition. When a substrate on which a silicon oxide film is formed is used in a process method and apparatus, Si—O—Si of the oxide film is generated by the action of excited oxygen atoms generated by the reaction between an ozone-containing gas and light having ultraviolet light. Bonds increase and Si—OH bonds that cause a decrease in electrical properties decrease. As a result, the insulating characteristics, etching resistance, electric film thickness, and dielectric constant of the silicon oxide film are increased, and the fixed charge is reduced.

  According to the above invention, the insulating properties, etching resistance, electric film thickness and relative dielectric constant of the oxide film formed by the chemical vapor deposition method are increased and the fixed charge is reduced, so that the film quality of the oxide film is improved.

1 is a schematic sectional view showing the configuration of an oxide film forming apparatus according to an embodiment of the invention. The time chart of supply of ozone-containing gas and irradiation of ultraviolet light concerning an embodiment of the invention. The wet etching resistance of the SiO ₂ film of the TEOS-CVD film substrate before and after the 8.5 nm thick TEOS-CVD film substrate is processed by the process according to the embodiment of the invention. Electrical characteristic diagrams of the SiO ₂ film of the TEOS-CVD film substrate before and after the 8.5 nm-thickness TEOS-CVD film substrate (three identical samples) is processed by the process according to the embodiment of the invention (I- V characteristic diagram). Electrical characteristics of the SiO ₂ film of TEOS-CVD film substrate after processing prior to treatment with the process according to TEOS-CVD film substrate having a thickness of 8.5nm to an embodiment of the invention Figure (C-V characteristic diagram). The spectrum figure which showed the difference after processing the TEOS-CVD film | membrane board | substrate with a film thickness of 8.5 nm before processing by the process which concerns on the Example of invention. The dielectric constant of the SiO ₂ film of the TEOS-CVD film substrate before and after the 8.5 nm thick TEOS-CVD film substrate is processed by the process according to the embodiment of the invention. Electrical characteristics of the SiO ₂ film of TEOS-CVD film substrate after processing prior to treatment with the process according to TEOS-CVD film substrate having a thickness of 50nm to an embodiment of the invention Figure (I-V characteristic diagram). Wet etching resistance of the SiO ₂ film of the HTO-CVD film substrate before and after the 9.0 nm-thickness HTO-CVD film substrate is processed by the process according to the embodiment of the invention. Electrical characteristics of the HTO-CVD film substrate SiO ₂ film after treatment in the process according to HTO-CVD film substrate having a thickness of 9.0nm to an embodiment of the invention Figure (C-V characteristic diagram). Electrical characteristics of the SiO ₂ film of the HTO-CVD film substrate after processing prior to treatment with the process according to HTO-CVD film substrate having a thickness of 9.0nm to an embodiment of the invention Figure (I-V characteristic diagram).

  FIG. 1 is a schematic sectional view showing the configuration of an oxide film reforming apparatus 1 according to an embodiment of the invention.

The oxide film reforming apparatus 1 is for achieving the improvement of the insulating characteristics of the CVD-SiO ₂ film including the cleaning of the CVD film formed on the substrate 2.

The CVD-SiO ₂ film means an oxide film formed on the substrate 2 by CVD using a source gas made of an organic material having Si—C bonds or Si—O bonds. Examples of the source gas include TEOS (Tetra ethyl orthosilicate), HMDS (Hexamethyldisilazane), a mixed gas of SiH ₂ Cl ₂ (Dichlorosilane) gas and N ₂ O gas, and the like.

Specifically, the oxide film reformer 1 emits light having an emission line having a wavelength longer than 210 nm (having at least ultraviolet light) that does not induce photodamage damage to the CVD-SiO ₂ film formed on the substrate 2. Irradiation in a contained gas atmosphere enhances the insulating properties of the CVD-SiO ₂ film.

  As shown in FIG. 1, the oxide film reforming apparatus 1 includes a reaction furnace 3 in which an ozone-containing gas is supplied and a substrate 2 is stored, and at least ultraviolet light with respect to the substrate 2 in the reaction furnace 3. And a light source 4 for irradiating light including the region. Pipes 5 and 6 are connected to the reaction furnace 3. The pipe 5 is a pipe for introducing an ozone-containing gas. The pipe 6 is a pipe for discharging the gas in the reaction furnace 3.

  As the reaction furnace 3, a cold wall type CVD decompression furnace capable of heating only the substrate 2 may be applied. For example, a decompression cold type single wafer type can be mentioned.

For exhausting the gas in the reaction furnace 3, a system used in a conventional CVD decompression furnace may be used as it is. At this time, a detoxifying device such as a particle trap and a dry pump having a degree of ultimate vacuum of about 1 Pa or less, for example, a mechanical booster pump (for example, exhaust speed 1000 L / min) are connected to the pipe 6. The material of the reaction furnace 3 may be a material that is not reactive with ozone. For example, quartz, stainless steel, aluminum, titanium, etc. are mentioned. In addition, an irradiation window 7 for introducing light (ultraviolet light or light having visible light and this) irradiated from the light source 4 is provided on the ceiling portion of the reaction furnace 3. The irradiation window 7 is made of a light transmissive material as exemplified by a crystal material such as synthetic quartz or MgF ₂ .

  The installation form of the substrate 2 in the reaction furnace 3 may adopt any known vertical type or horizontal type. The substrate 2 is attached to a susceptor 8 made of ceramic. The susceptor 8 is supported by a stage 9 so as to be movable in the reaction furnace 3. The susceptor 8 includes a temperature sensor 10 formed of a thermocouple that senses the temperature of the substrate 2. The temperature of the substrate 2 detected by the temperature sensor 10 is used for illuminance control of the light source 4. The temperature of the substrate 2 may remain at room temperature without using a heat source such as a preliminary halogen lamp or heater.

  The light source 4 irradiates at least ultraviolet light, that is, light having a wavelength band of 210 to 300 nm. The light may include light having a wavelength longer than 300 nm (visible light). The illuminance of the light source 4 is adjusted so as to irradiate near or on the surface of the substrate 2. The irradiation method of the light source 4 is not particularly limited as long as the light of the light source 4 is set to be irradiated on the surface of the substrate 2. An example of the light source 4 is a high-pressure mercury lamp. The high-pressure mercury lamp can emit light in the visible light region (for example, 410 to 600 nm) that can be used as a heating source in addition to light in the ultraviolet light region. That is, light in the visible light region is not absorbed by the ozone gas, and thus has a heating effect on the surface of the substrate 2. Therefore, preliminary heating parts are not required for the substrate 2, and the configuration of the oxide film reforming apparatus 1 is simplified.

When the oxide film reforming apparatus 1 is disposed at the rear stage of a furnace (for example, a low pressure CVD chamber) for forming an oxide film on a substrate by a chemical vapor deposition method related to a semiconductor manufacturing process apparatus (not shown), a single process ( In one chamber, the CVD-SiO ₂ film can be modified and the interface oxide film can be formed. Therefore, the processing time of the substrate 2 having an oxide film with improved etching resistance and insulation characteristics is shortened, and the throughput is improved.

  FIG. 2 is a time chart of ozone-containing gas supply and light irradiation according to an embodiment of the invention.

  An operation example of the oxide film reforming apparatus 1 will be described with reference to FIGS. 1 and 2. As shown in the time chart of FIG. 2, simultaneously with the introduction of the ozone-containing gas into the reaction furnace 3, the substrate 2 in the reaction furnace 3 is irradiated with light having ultraviolet light from the light source 4. The wavelength of light emitted from the light source 4 is limited to a wavelength longer than 210 nm. It is only necessary that the ultraviolet light irradiation distribution in the substrate 2 can be ± 10%.

  Examples of the ozone-containing gas include gases having an ozone concentration of 0.1 to 100 vol%. The 100% concentration ozone gas can be supplied by, for example, a high purity ozone gas generator (MPOG-HM1A1 or MPO-104A1) manufactured by Meidensha based on an ozone beam generator disclosed in Japanese Patent Publication No. 5-17164. The internal pressure of the reaction furnace 3 is controlled to, for example, 0.1 to 30 Pa by operation control of a pump (not shown) connected to the pipe 6. And the irradiation of the light stops together with the supply stop of the ozone-containing gas.

The insulating characteristics of the CVD-SiO ₂ film by the ultraviolet light excited ozone treatment process according to the invention using an ozone-containing gas and light having ultraviolet light will be described with reference to the following examples.

(Example 1)
FIG. 3 shows wet etching resistance of the SiO ₂ film of the TEOS-CVD film substrate before and after being processed in the process according to the embodiment of the invention. The wet etching resistance here is a high-purity buffered hydrofluoric acid used in wet etching and cleaning processes in the semiconductor manufacturing process (mixed with hydrofluoric acid and ammonium fluoride from the neutral to the acidic range due to the buffer effect. It means resistance to chemicals.

  The TEOS-CVD film substrate used in the experiment related to this characteristic diagram was formed at a processing temperature of 620 ° C. by supplying TEOS (Tetrahethylsilicate) gas and oxygen gas to a low-pressure CVD chamber storing Si (100) having an 8-inch diameter. Is. The thickness of this TEOS-CVD film was 8.5 nm.

The TEOS-CVD film substrate was placed on the susceptor 8 of the processing furnace 3 of the oxide film forming apparatus 1. As the ozone-containing gas, a gas having an ozone concentration of 90% or more supplied from a high-purity ozone generator (model MPO-104A1) manufactured by Meidensha was used. As the light source 4, a high-pressure mercury lamp (manufactured by USHIO INC., Model UVX-02528S1APA02) was used. The TEOS-CVD film substrate was arranged so that the gas phase distance in the reaction furnace 3 (distance between the lower surface of the irradiation window 7 and the upper surface of the TEOS-CVD film substrate 2) was 5 mm. The ozone-containing gas was supplied to the processing furnace 3 at a flow rate of 100 sccm through a pipe 5 controlled to room temperature. The light from the light source 4 was applied to the TEOS-CVD film substrate in the processing furnace 3 through the irradiation window 7 made of synthetic quartz simultaneously with the supply of the ozone-containing gas. The ultraviolet illuminance of the light source 4 was 220 mW / cm ² (210 to 300 nm, defined in the following range) on the TEOS-CVD film substrate. The processing time was 15 minutes. The internal pressure of the processing furnace 3 was controlled by exhaust with a dry pump so as to be 5 Pa or less.

  As is clear from the characteristic diagram of FIG. 3, it was confirmed that the TEOS-CVD film substrate was subjected to the process according to the invention, so that the film quality became dense and wet etching resistance was improved. Specifically, it has been confirmed that the wet etching resistance is improved by 8.5 nm or more in the depth direction from the surface of the TEOS-CVD film substrate by the modification method according to the embodiment, and particularly 1-2 nm from the surface is greatly improved. It was done.

FIG. 4 is an electrical characteristic diagram (IV characteristic diagram) of the SiO ₂ film of the TEOS-CVD film substrate before and after the TEOS-CVD film substrate (three identical samples) is processed by the process according to the embodiment. It is. As is apparent from this characteristic diagram, it was confirmed that the leakage current of the substrate decreased when the TEOS-CVD film substrate was subjected to the process according to the invention. Specifically, the leakage current (when an electric field strength of 6 [MV / cm] is applied) is reduced from 10 ⁻⁷ [A / cm ² ] to 10 ⁻⁸ [A / cm ² ], and an ideal FN curve is obtained. It is approaching. In this way, it was confirmed that the insulation characteristics were improved. In FIG. 4, the electrical characteristics of three identical samples (TEOS-CVD film substrate) are disclosed, and the reproducibility of improving the electrical characteristics of the process according to this example was also demonstrated.

FIG. 5 is an electrical characteristic diagram (CV characteristic diagram) of the SiO ₂ film of the TEOS-CVD film substrate before and after the 8.5 nm-thickness TEOS-CVD film substrate is processed by the process according to the above embodiment. It is. As is apparent from this characteristic diagram, it has been confirmed that the CV characteristic curve when the process according to the embodiment of the invention is processed is closer to the ideal CV characteristic than before the process. The fixed charge of the SiO ₂ film was 2.31 × 10 ¹² [cm ⁻² ] before being processed by the process according to the embodiment of the invention, but 1.31 × 10 ¹² [cm ⁻² ] after the processing. ].

  FIG. 6 is a spectrum diagram showing the difference between the TEOS-CVD film substrate before and after being processed by the process according to this example. As is clear from this spectrum diagram, the Si—O—Si peak is high and the Si—OH peak is low. That is, it can be confirmed that the Si—OH bond was dehydrated by the process according to this example, and the Si—O—Si bond was formed by the excited state oxygen atoms generated by the light having ultraviolet light and the ozone-containing gas.

FIG. 7 shows the relative dielectric constant of the SiO ₂ film of the TEOS-CVD film substrate before and after the 8.5 nm-thickness TEOS-CVD film substrate is processed by the process according to the above-described embodiment. When the relative dielectric constant of the oxide film of the substrate before processing in the embodiment according to the invention is 2.83, it becomes 3.85 after the processing, and according to the oxide film modification method according to the invention, the relative dielectric constant is It was confirmed that the value was improved to a value (3.90) comparable to the thermal oxide film.

  Further, when the change of the electric film thickness of the substrate is also verified, when the electric film thickness of the substrate before processing in the above-described embodiment according to the invention is 6.2 nm, it becomes 8.1 nm after the processing, It has been confirmed that the electrical film thickness increases according to the oxide film modification method.

  The results of FIGS. 3 to 7 are considered to be caused by excited state oxygen atoms obtained from the ozone-containing gas and the light supplied from the high-pressure mercury lamp, and the Si oxide film on the CVD substrate is processed according to the invention. It has been shown that the film quality changes with good insulation characteristics.

FIG. 8 shows electrical characteristics of the SiO ₂ film of the TEOS-CVD film substrate before and after the 50 nm-thick TEOS-CVD film substrate is processed in the same process as the oxide film forming apparatus according to the above-described embodiment. It is a figure (IV characteristic diagram). A TEOS-CVD film substrate having a thickness of 50 nm was formed at a processing temperature of 620 ° C. by supplying TEOS gas and oxygen gas into a low-pressure CVD chamber in which 8 inch diameter Si (100) was stored. As is clear from this characteristic diagram, it was confirmed that even when a TEOS-CVD film substrate having a thickness of 50 nm was subjected to the process according to the invention, the electrical characteristics of this substrate were improved. It has been shown that the insulation characteristics are improved without being influenced by the CVD film thickness.

(Example 2)
FIG. 9 shows wet etching resistance of the SiO ₂ film of the HTO-CVD film substrate before and after being processed in the process according to the embodiment of the invention. The wet etching resistance here is a high-purity buffered hydrofluoric acid used in wet etching and cleaning processes in the semiconductor manufacturing process (mixed with hydrofluoric acid and ammonium fluoride from the neutral to the acidic range due to the buffer effect. It means resistance to chemicals.

The HTO-CVD film substrate used for the experiment related to this characteristic diagram is obtained by supplying a mixed gas of SiH ₂ Cl ₂ (Dichlorosilane) gas and N ₂ O gas to a low-pressure CVD chamber storing Si (100) having an 8-inch diameter. The film was formed at a processing temperature of 750 ° C. The thickness of this HTO-CVD film was 9 nm.

The HTO-CVD film substrate was placed on the susceptor 8 of the processing furnace 3 of the oxide film forming apparatus 1. As the ozone-containing gas, a gas having an ozone concentration of 90% or more supplied from a high-purity ozone generator (model MPO-104A1) manufactured by Meidensha was used. As the light source 4, a high-pressure mercury lamp (manufactured by USHIO INC., Model UVX-02528S1APA02) was used. The HTO-CVD film substrate was disposed such that the gas phase distance in the reaction furnace 3 (distance between the lower surface of the irradiation window 7 and the upper surface of the HTO-CVD film substrate 2) was 5 mm. The ozone-containing gas was supplied to the processing furnace 3 at a flow rate of 100 sccm through a pipe 5 controlled to room temperature. The light from the light source 4 was irradiated onto the HTO-CVD film substrate in the processing furnace 3 through the irradiation window 7 made of synthetic quartz simultaneously with the supply of the ozone-containing gas. The ultraviolet illuminance of the light source 4 was 220 mW / cm ² (210 to 300 nm, defined in the following range) on the HTO-CVD film substrate. The processing time was 30 minutes. The internal pressure of the processing furnace 3 was controlled by exhaust with a dry pump so as to be 5 Pa or less.

  As is clear from the characteristic diagram of FIG. 9, it was confirmed that the HTO-CVD film substrate was subjected to the process according to the invention, so that the film quality became dense and wet etching resistance was improved. Specifically, it has been confirmed that the wet etching resistance is improved over 9 nm in the depth direction from the surface of the HTO-CVD film substrate by the modification method according to the embodiment, and in particular, 1-2 nm from the surface is greatly improved. .

FIG. 10 is an electrical characteristic diagram (CV characteristic diagram) of the SiO ₂ film of the HTO-CVD film substrate after the 9-nm thick HTO-CVD film substrate is processed by the process according to the example. As is apparent from this characteristic diagram, it has been confirmed that the CV characteristic curve when the process according to the embodiment of the invention is processed is closer to the ideal CV characteristic than before the process.

FIG. 11 is an electrical characteristic diagram (IV characteristic diagram) of the SiO ₂ film of the HTO-CVD film substrate before and after the HTO-CVD film substrate is processed by the process according to the above embodiment. As is apparent from this characteristic diagram, it was confirmed that the leakage current of the substrate decreased when the HTO-CVD film substrate was subjected to the process according to the invention. Furthermore, in the untreated HTO-CVD film, dielectric breakdown occurred near 14 [MV / cm], but not in the treated HTO-CVD film. In this way, it was confirmed that the insulation characteristics were improved.

As described above, when the HTO-CVD film is irradiated with light from a high-pressure mercury lamp in the presence of ozone, the film quality of the oxide film formed by the HTO-CVD method becomes dense and the insulating characteristics are improved. Further, a high quality SiO ₂ film having a very good interface state is formed at the interface.

  In Examples 1 and 2 described above, the process is performed in an ozone-containing gas atmosphere having an ozone concentration of 90% or more and 5 Pa or less under irradiation of light in the 210 to 300 nm region. Even if the pressure range is 0.1 to 30 Pa and the ozone concentration range of the ozone-containing gas is 0.1 to 100 vol%, the same effect as in the above embodiment can be obtained.

DESCRIPTION OF SYMBOLS 1 ... Oxide film reformer 2 ... Substrate 3 ... Reactor 4 ... Light source 7 ... Irradiation window

Claims (10)

An oxide film reforming method comprising supplying an ozone-containing gas to an oxide film on a substrate formed by a chemical vapor deposition method and irradiating light having ultraviolet light. 2. The oxide film reforming method according to claim 1, wherein the light irradiation is performed simultaneously with the supply of the ozone-containing gas. The method for reforming an oxide film according to claim 1 or 2, wherein the pressure of the atmosphere of the ozone-containing gas is 0.1 to 30 Pa. The method for reforming an oxide film according to any one of claims 1 to 3, wherein the ozone concentration of the ozone-containing gas is 0.1 to 100 vol%. 5. The oxide film modification method according to claim 1, wherein the oxide film is a silicon oxide film. The oxide film reforming method according to claim 1, wherein the chemical vapor deposition method is TEOS-CVD. 6. The oxide film modification method according to claim 1, wherein the chemical vapor deposition method is HTO-CVD. A processing furnace in which a substrate on which an oxide film is formed by chemical vapor deposition is stored and an ozone-containing gas is supplied;
An oxide film reforming apparatus comprising: a light source for irradiating light having ultraviolet light to an oxide film on a substrate in the processing furnace. The oxide film reforming apparatus according to claim 8, wherein the light source irradiates the light simultaneously with the supply of the ozone-containing gas. A furnace for forming an oxide film on the substrate by chemical vapor deposition;
An oxide film reformer for modifying the oxide film on the substrate supplied from the furnace,
The oxide film reformer is
A processing furnace for storing the substrate on which the oxide film is formed and being supplied with an ozone-containing gas;
A process apparatus comprising: a light source for irradiating light having ultraviolet light to an oxide film on a substrate in the processing furnace.

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