CN116607122A - Curing method of silicon-nitrogen polymer - Google Patents
Curing method of silicon-nitrogen polymer Download PDFInfo
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- CN116607122A CN116607122A CN202310672013.2A CN202310672013A CN116607122A CN 116607122 A CN116607122 A CN 116607122A CN 202310672013 A CN202310672013 A CN 202310672013A CN 116607122 A CN116607122 A CN 116607122A
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- silicon
- silazane
- ozone gas
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- 229920000642 polymer Polymers 0.000 title claims abstract description 88
- 238000001723 curing Methods 0.000 title claims abstract description 82
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 title claims abstract description 36
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 32
- 239000007789 gas Substances 0.000 claims abstract description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 23
- 230000001678 irradiating effect Effects 0.000 claims abstract description 16
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 claims abstract description 15
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 11
- 238000002360 preparation method Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 52
- 238000006243 chemical reaction Methods 0.000 claims description 12
- 235000012239 silicon dioxide Nutrition 0.000 claims description 10
- 230000005855 radiation Effects 0.000 claims description 4
- 239000010408 film Substances 0.000 description 25
- 230000000694 effects Effects 0.000 description 12
- 238000005229 chemical vapour deposition Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 6
- 239000012530 fluid Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000003848 UV Light-Curing Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000003044 adaptive effect Effects 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000009969 flowable effect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
Abstract
The present invention provides a curing method of a silazane polymer for curing a flowing silazane polymer in a silica film preparation process to convert silazane bonds therein into siloxane bonds, the curing method comprising: irradiating Ultraviolet (UV) light on the silicon nitrogen polymer to be cured, and controlling the UV irradiation time to be shorter than 300s; and irradiating Ultraviolet (UV) light and simultaneously introducing ozone gas to the surface of the silicon nitrogen polymer.
Description
Technical Field
The invention relates to a semiconductor film deposition process, in particular to a curing method of a silicon nitrogen polymer.
Background
Chemical Vapor Deposition (CVD) refers to the deposition of thin films by chemical reaction of multiple vapor state reactants of different partial pressures at a temperature and pressure. In the conventional CVD process, the deposited film is typically oxide, nitride, carbide, or other compound or polysilicon, and one of CVD is broadly calculated by using an epitaxial technique for film growth in a specific field. CVD is classified into Atmospheric Pressure CVD (APCVD), fluid CVD (FCVD), low Pressure CVD (LPCVD), plasma Enhanced CVD (PECVD), sub-atmospheric pressure CVD (SACVD), high density plasma CVD (HDP-CVD), fluid CVD (FCVD), atomic Layer Deposition (ALD), and the like according to the reaction conditions, such as pressure, temperature, reaction source, and the like.
In the process of preparing a silicon dioxide film by using a Fluid Chemical Vapor Deposition (FCVD) process, a Flowable silicon nitrogen (Si-N) polymer needs to be cured to convert the silicon nitrogen (Si-N) bond into a silicon oxygen (Si-O) bond.
The common curing method comprises the step of irradiating Ultraviolet (UV) light on the surface of the semiconductor material to be cured, but the detection result shows that in the curing method for irradiating the UV light common in the prior art, after the UV irradiation, the Si-N bond ratio in the silicon nitrogen polymer film is still high, and the defect of poor curing effect exists.
Particularly, in the prior art, the irradiation curing time of ultraviolet light UV irradiation is too long, which easily causes that the upper layer film in the semiconductor material to be cured is cured into silicon dioxide due to sufficient irradiation, and UV light cannot penetrate through the upper layer film, so that the lower layer film cannot be cured. In addition, too long UV curing time may cause the already formed si—o bonds to be broken and then the si—n bonds to be regenerated, which affects the process efficiency. At the same time, too much curing time can result in insufficient curing, also reducing the process effectiveness.
In order to overcome the above-mentioned drawbacks of the prior art, there is a need in the art for a curing method of a silicon-nitrogen polymer, which is used for preparing a silicon dioxide film in a Fluid Chemical Vapor Deposition (FCVD) process, and by controlling a proper Ultraviolet (UV) curing irradiation time, the ratio of Si-O bonds in the flowing silicon-nitrogen polymer is effectively increased, the curing effect is effectively improved, the process efficiency is further improved, and the production cost is reduced.
Disclosure of Invention
The following presents a simplified summary of one or more aspects in order to provide a basic understanding of such aspects. This summary is not an extensive overview of all contemplated aspects, and is intended to neither identify key or critical elements of all aspects nor delineate the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed description that is presented later.
In order to overcome the above-described drawbacks of the prior art, the present invention provides a curing method of a silazane polymer for curing a flowing silazane polymer to convert silazane bonds therein into siloxane bonds in a silicon dioxide film preparation process, which may include: irradiating Ultraviolet (UV) light on the silicon nitrogen polymer to be cured, and controlling the UV irradiation time to be shorter than 300s; and irradiating Ultraviolet (UV) light and simultaneously introducing ozone gas to the surface of the silicon nitrogen polymer.
In one embodiment, preferably, in the method for curing a silazane polymer provided by the invention, the silazane polymer is a long-chain silazane polymer.
In an embodiment, preferably, in the method for curing a silazane polymer provided by the present invention, the introducing ozone gas into the surface of the silazane polymer may include: ozone gas is introduced into the surface of the silicon-nitrogen polymer so as to double the silicon-oxygen bond ratio in the silicon-nitrogen polymer under the same UV irradiation condition.
In an embodiment, preferably, in the curing method of a silazane polymer provided by the present invention, the curing method may further include: the UV irradiation time is controlled to be in the range of 100 to 240 seconds.
In an embodiment, preferably, in the curing method of a silazane polymer provided by the present invention, the curing method may further include: the radiation intensity power of the UV irradiation is controlled to be in the range of 35-70% of the rated power.
In an embodiment, preferably, in the method for curing a silazane polymer provided by the present invention, the introducing ozone gas into the surface of the silazane polymer may further include: controlling the concentration range of the ozone gas to be 100-300 g/m 3 。
In an embodiment, preferably, in the method for curing a silazane polymer provided by the present invention, the introducing ozone gas into the surface of the silazane polymer may further include: the flow rate of the ozone gas is controlled to be 5000-30000 sccm.
In an embodiment, preferably, in the method for curing a silazane polymer provided by the present invention, the irradiating ultraviolet UV light on the silazane polymer to be cured may include: the light source of the ultraviolet UV light is arranged at the top of the reaction chamber to irradiate the silicon nitrogen polymer from top to bottom.
The curing method of the silicon nitrogen polymer can be used for preparing the silicon dioxide film in a Fluid Chemical Vapor Deposition (FCVD) process, and ozone gas is introduced into the reaction cavity by controlling proper ultraviolet UV curing irradiation time, so that the proportion of Si-O bonds in the flowing silicon nitrogen polymer is effectively increased, the curing effect is effectively improved, the process efficiency is further improved, and the production cost is reduced.
Drawings
The above features and advantages of the present invention will be better understood after reading the detailed description of embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily to scale and components having similar related features or characteristics may have the same or similar reference numerals.
FIG. 1 is a process flow diagram of a method for curing a silazane polymer according to an aspect of the present invention;
FIG. 2 is a schematic diagram of the method for curing a silicon nitrogen polymer according to an embodiment of the invention;
FIG. 3A is a schematic view of the initial state of a wafer during a process step of irradiating ultraviolet UV light and simultaneously introducing ozone in a curing method of a silicon nitrogen polymer according to an embodiment of the invention; and
fig. 3B is a schematic diagram showing an intermediate state effect of a wafer in a process step of irradiating ultraviolet UV light and simultaneously introducing ozone in a curing method of a silazane polymer according to an embodiment of the invention.
For clarity, a brief description of the reference numerals is given below:
method for curing 100 silicon nitrogen polymer
101 step 102 step 201 ultraviolet UV light
202 upper layer film
203 underlayer film
204 heating plate
301 ultraviolet UV light
302 silazane polymer
303 upper layer film
304 underlayer film
Detailed Description
Further advantages and effects of the present invention will become apparent to those skilled in the art from the disclosure of the present specification, by describing the embodiments of the present invention with specific examples. While the description of the invention will be presented in connection with a preferred embodiment, it is not intended to limit the inventive features to that embodiment. Rather, the purpose of the invention described in connection with the embodiments is to cover other alternatives or modifications, which may be extended by the claims based on the invention. The following description contains many specific details for the purpose of providing a thorough understanding of the present invention. The invention may be practiced without these specific details. Furthermore, some specific details are omitted from the description in order to avoid obscuring the invention.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
In addition, the terms "upper", "lower", "left", "right", "top", "bottom", "horizontal", "vertical" as used in the following description should be understood as referring to the orientation depicted in this paragraph and the associated drawings. This relative terminology is for convenience only and is not intended to be limiting of the invention as it is described in terms of the apparatus being manufactured or operated in a particular orientation.
It will be understood that, although the terms "first," "second," "third," etc. may be used herein to describe various elements, regions, layers and/or sections, these elements, regions, layers and/or sections should not be limited by these terms and these terms are merely used to distinguish between different elements, regions, layers and/or sections. Accordingly, a first component, region, layer, and/or section discussed below could be termed a second component, region, layer, and/or section without departing from some embodiments of the present invention.
In order to overcome the defects in the prior art, the invention provides a curing method of a silicon nitrogen polymer, which can be used for preparing a silicon dioxide film in a Fluid Chemical Vapor Deposition (FCVD) process, and ozone gas is introduced into a reaction cavity by controlling proper ultraviolet UV curing irradiation time, so that the proportion of Si-O bonds in the flowing silicon nitrogen polymer is effectively increased, the curing effect is effectively improved, the process efficiency is further improved, and the production cost is reduced.
Fig. 1 is a process flow diagram of a method for curing a silazane polymer according to an aspect of the present invention.
Referring to fig. 1, a method 100 for curing a silicon nitride polymer according to the present invention may be used for curing a flowing silicon nitride polymer to convert silicon nitride bonds into silicon oxygen bonds in a silicon dioxide film preparation process, and the curing method may include:
step 101: ultraviolet (UV) light is irradiated on the silazane polymer to be cured, and the UV irradiation time is controlled to be shorter than 300s.
The principle and process of the curing method of the silazane polymer provided by the invention can be clearly shown in combination with fig. 2.
Fig. 2 is a schematic diagram of a method for curing a silazane polymer according to an embodiment of the invention.
In this embodiment, as shown in fig. 2, the silazane polymer to be processed is placed on a heating plate 204, and ultraviolet UV light 201 is irradiated thereon from above to convert the silazane bond therein into a siloxane bond, so that the flowing silazane polymer can be cured from top to bottom.
The source wavelength of the ultraviolet UV light 201 may be in the range of 200 to 280 nm.
More specifically, in the process of preparing the silicon oxide film using the FCVD process in the embodiment shown in fig. 2, if the curing time of the ultraviolet UV light 201 is too long, it is easy to cause the si—n bond in the upper film 202 in the semiconductor material to be cured to be converted into the si—o bond due to the irradiation, and at the same time, the ultraviolet UV light 201 cannot penetrate the upper film 202, thereby causing the lower film 203 to be unable to be cured.
In addition, the excessive curing time of the ultraviolet UV light 201 may cause the already formed si—o bond to be broken and then the si—n bond to be regenerated, which affects the process efficiency. At the same time, too much curing time can result in insufficient curing, also reducing the process effectiveness.
Therefore, in the preparation process of the silicon dioxide film, the curing method of the silicon nitrogen polymer provided by the invention can achieve better curing process effect by controlling proper ultraviolet UV curing irradiation time.
Further, in a preferred embodiment, the method for curing a silazane polymer provided by the invention may further include: the UV irradiation time is controlled to be in the range of 100 to 240 seconds.
The content ratio of Si-O bonds can be increased by appropriately decreasing the curing time. For example, FTIR difference spectra show that for a 12 inch wafer, for example, when the desired deposited film thickness is 1500-2500A, the UV irradiation time can be controlled to be 120s, and further, better curing effect can be achieved.
Meanwhile, in a preferred embodiment, the method for curing a silazane polymer provided by the invention may further include: the radiation intensity power of the UV irradiation is controlled to be in the range of 35-70% of the rated power. The rate of the curing process can be improved by controlling the intensity of the adaptive UV light radiation, so that the process efficiency is improved, and the production cost is reduced.
With continued reference to fig. 1, the method 100 for curing a silazane polymer according to the present invention may further include:
step 102: and (3) irradiating Ultraviolet (UV) light and simultaneously introducing ozone gas to the surface of the silicon nitrogen polymer.
In the curing process of the silicon nitrogen polymer, ozone gas is introduced while ultraviolet UV light is irradiated, and the ultraviolet UV light can decompose the ozone gas into oxygen free radicals with stronger reactivity, so that Si-O bonds can be formed more favorably, and the proportion of the Si-O bonds in the flowing silicon nitrogen polymer can be improved more favorably.
Further, in a preferred embodiment, in the method for curing a silazane polymer provided by the present invention, the introducing ozone gas into the surface of the silazane polymer may further include: controlling the concentration range of the ozone gas to be 100-300 g/m 3 。
The microstructure of Si-O bonds in the curing process of the silicon nitrogen polymer can be improved by controlling the concentration value of the adaptive ozone gas, so that the formation quality of the Si-O bonds is improved, and the curing process effect is improved.
Meanwhile, in an embodiment of the present invention, in the method for curing a silazane polymer provided by the present invention, the step of introducing ozone gas into the surface of the silazane polymer may further include: the flow rate of the ozone gas is controlled to be 5000-30000 sccm.
It is readily understood that the flow rate of the ozone gas may vary depending on the wafer size differences being processed.
In a preferred embodiment, the present invention provides a method for curing a silazane polymer, which is a long chain silazane polymer.
In particular, in the curing method of the silicon nitrogen polymer provided by the invention, the cured object is a flowing long-chain silicon nitrogen polymer, and ozone gas is introduced at the same time, so that silicon nitrogen bonds in the cured object are converted into silicon oxygen bonds to obtain the silicon dioxide film.
The curing step in the conventional semiconductor deposition process, such as uv curing of carbon-containing low-k substrates, is either aimed at removing pore-forming agents from the thin film or cross-linking the substrate to obtain a low-k substrate material with better physicochemical properties, which is different from the curing method of the silazane polymer provided by the present invention in that the film quality conversion is not present.
Further, in a preferred embodiment, the method for curing a silazane polymer provided by the present invention, the step of irradiating ultraviolet UV light on the silazane polymer to be cured, may include: the light source of the ultraviolet UV light is arranged at the top of the reaction chamber to irradiate the silicon nitrogen polymer from top to bottom. The following description will be made with reference to fig. 3A and 3B.
Fig. 3A is a schematic view of an initial state of a wafer in a process step of irradiating ultraviolet UV light and simultaneously introducing ozone in a curing method of a silazane polymer according to an embodiment of the invention.
Fig. 3B is a schematic diagram showing an intermediate state effect of a wafer in a process step of irradiating ultraviolet UV light and simultaneously introducing ozone in a curing method of a silazane polymer according to an embodiment of the invention.
In this embodiment, ultraviolet UV light 301 irradiates the silazane polymer 302 from above the silazane polymer 302 from top to bottom, as shown in FIG. 3A. At the same time, ozone gas may be introduced into the reaction chamber and the silazane polymer 302 begins to cure.
Further, referring to fig. 3B, since the light source of the ultraviolet UV light is disposed at the top of the reaction chamber in this embodiment, the curing process of the silazane polymer 302 is performed gradually from top to bottom. It is easy to understand that, as time advances, the si—n bond in the upper layer film 303 is converted into si—o bond first, and from top to bottom, the ratio of si—o bond is gradually increased, the ratio of si—n bond is gradually decreased, and the higher the ratio of si—o bond is, the better the curing effect is.
Further, preferably, a reflecting mirror can be additionally arranged at a proper position in the reaction chamber, so that the irradiation direction and the irradiation range can be improved, and compared with the scheme of arranging a rotary ultraviolet light source in the prior art, the curing method of the silicon nitrogen polymer provided by the invention has the advantages that the curing effect is improved while the complexity of equipment is not increased, the deposition process rate is improved, and the production cost is reduced by controlling the adapting time and the reactant parameters.
While, for purposes of simplicity of explanation, the methodologies are shown and described as a series of acts, it is to be understood and appreciated that the methodologies are not limited by the order of acts, as some acts may, in accordance with one or more embodiments, occur in different orders and/or concurrently with other acts from that shown and described herein or not shown and described herein, as would be understood and appreciated by those skilled in the art.
The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (8)
1. A curing method of a silazane polymer for curing a flowing silazane polymer to convert silazane bonds therein into siloxane bonds in a silicon dioxide film preparation process, the curing method comprising:
irradiating Ultraviolet (UV) light on the silicon nitrogen polymer to be cured, and controlling the UV irradiation time to be shorter than 300s; and
and (3) irradiating Ultraviolet (UV) light and simultaneously introducing ozone gas to the surface of the silicon nitrogen polymer.
2. The curing method of claim 1, wherein the silazane polymer is a long chain silazane polymer.
3. The curing method of claim 1, wherein the introducing ozone gas to the silazane polymer surface comprises:
ozone gas is introduced into the surface of the silicon-nitrogen polymer so as to double the silicon-oxygen bond ratio in the silicon-nitrogen polymer under the same UV irradiation condition.
4. The curing method of claim 1, wherein the curing method further comprises:
the UV irradiation time is controlled to be in the range of 100 to 240 seconds.
5. The curing method of claim 1, wherein the curing method further comprises:
the radiation intensity power of the UV irradiation is controlled to be in the range of 35-70% of the rated power.
6. The method of curing according to claim 1, wherein the introducing ozone gas to the surface of the silazane polymer further comprises:
controlling the concentration range of the ozone gas to be 100-300 g/m 3 。
7. The method of curing according to claim 1, wherein the introducing ozone gas to the surface of the silazane polymer further comprises:
controlling the flow rate range of the ozone gas to be 5000-30000 sccm.
8. The curing method of claim 1, wherein said irradiating ultraviolet UV light on said silazane polymer to be cured comprises:
the light source of the ultraviolet UV light is arranged at the top of the reaction chamber to irradiate the silicon-nitrogen polymer from top to bottom.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310672013.2A CN116607122A (en) | 2023-06-07 | 2023-06-07 | Curing method of silicon-nitrogen polymer |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310672013.2A CN116607122A (en) | 2023-06-07 | 2023-06-07 | Curing method of silicon-nitrogen polymer |
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| CN116607122A true CN116607122A (en) | 2023-08-18 |
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| CN202310672013.2A Pending CN116607122A (en) | 2023-06-07 | 2023-06-07 | Curing method of silicon-nitrogen polymer |
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