JP2009249688A - Method for manufacturing stacked substrate, vacuum film-forming method, and vacuum film-forming apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a stacked substrate, which contributes to a higher definition of a wiring pattern. <P>SOLUTION: When manufacturing the stacked substrate by forming a thin film on a resin film F, this manufacturing method includes operating sputtering cathodes 43, 44 and 45 in a state of making sputtering cathodes 41 and 42 unoperated, while applying a tension in a range of 25 N to 80 N to a part between an unwinding roll 14 and a nip roll 31 of the resin film F and also applying a tension in a range of 10 N to 25 N to a part between the nip roll 31 and a winding roll 16. A nickel thin film is formed on the surface of a contacting part of the resin film F with a can roll by operating the sputtering cathode 43. The thin film becomes an underlayer. A copper thin film is formed on the underlayer by the sputtering cathode 44, and subsequently, a copper thin film is formed on the above copper thin film by the sputtering cathode 45. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a laminated substrate manufacturing method for producing a laminated substrate having a thin film formed on the surface of a resin film in vacuum, a vacuum film forming method for forming a thin film on the surface of a resin film, and a vacuum forming method. The present invention relates to a membrane device.

  Flexible printed circuit boards, COF, TAB tapes, etc. are widely used in the electric / electronic field. For example, a flexible printed circuit board is manufactured by manufacturing a resin substrate with a metal film in which a metal thin film is formed on the surface of a resin film such as polyimide, and attaching the metal film by a subtractive method (method of forming a wiring pattern by chemical etching or the like). It is produced by forming a wiring pattern on a resin substrate. In recent years, in order to mount electronic components with higher density, the dimensions of flexible printed circuit boards, etc., have been refined and the change in dimensions has been reduced, and the adhesion between the metal thin film that becomes the wiring pattern and the resin film has been increased. Etc. are demanded.

  The resin substrate with a metal film before being processed into a flexible printed circuit board is obtained by uniformly forming a metal film on the surface of the resin film as described above. For example, a roll-to-roll vacuum film forming apparatus is used. A laminated substrate (on which a metal thin film is formed) is manufactured, and then a metal film is electroplated on the metal thin film. In this roll-to-roll vacuum film formation apparatus, vacuum film formation is performed while cooling the long resin film in order to prevent the long resin film from being altered or damaged due to heat during film formation. As a technique for cooling a long resin film, the resin film is conveyed while contacting the surface of the can roll where the refrigerant circulates inside, and a thin film is formed on the surface of the resin film by a sputtering cathode disposed opposite the can roll. There is a technique for forming a film (for example, see Patent Document 1).

  In addition, as a technique for manufacturing a laminated substrate, there is a technique of forming a film while conveying a long resin film in a straight line on a plurality of rolls arranged in a straight line (see, for example, Patent Document 2). .

In the above-described technology for bringing a resin film into contact with the can roll and cooling it, when a part of the resin film is lifted (away from) the surface of the can roll, the floating part is heated without being sufficiently cooled. The As a result of this heating, the resin film is likely to be partially deformed, and in some cases, the resin film may be damaged. Therefore, in order to transport the resin film in close contact with the can roll, a strong tension of 50 N (Newton) or more is applied to the resin film while transporting the resin film in close contact with the surface of the can roll.
JP-A-63-310960 JP 2006-336029 A

  As described above, when the film is formed on the surface of the resin film on which a strong tension of 50 N or more acts, when the formed thin film is relatively thick (for example, 50 nm or more), the formed thin film Since the movement of the resin film is suppressed (the resin film in a state where the tension is applied is fixed by the thin film), the tension acting on the resin film remains after the film formation. In this way, when a wiring pattern is formed by, for example, a subtractive method on a resin film that remains in tension after film formation, the thin film is removed at the portion of the thin film that does not become wiring (the portion from which the thin film has been removed). While the film is exposed and the tension is released, the thin film suppresses the movement of the resin film in the portion of the thin film that becomes the wiring (the portion where the thin film remains), so that the tension tends to remain. When the tension acting on the resin film is partially released or not released, the resin film partially expands and contracts. Therefore, when the wiring pattern is observed microscopically, the wiring pattern is It may be deformed or displaced. Such deformation and shift have a bad influence as the wiring pattern becomes finer, and there is a possibility that the function as a flexible printed circuit board may be impaired.

  In addition, in the second technique (a technique for forming a film while conveying a long resin film linearly on a plurality of rolls arranged in a straight line), a plurality of rolls and a resin arranged in a straight line are used. Since there is only a line contact with the back surface of the film, it is necessary to apply a very strong tension to the resin film in order not to wave the resin film. For this reason, the same problem as described above occurs.

  SUMMARY OF THE INVENTION In view of the above circumstances, an object of the present invention is to provide a method for manufacturing a laminated substrate that can contribute to further refinement of a wiring pattern, a vacuum film forming method and a vacuum film forming apparatus for manufacturing such a laminated substrate. And

In order to achieve the above object, a method for producing a laminated substrate according to the present invention is a method for producing a laminated substrate in which a thin film is formed on the surface of a resin film in a vacuum.
(1) A laminated substrate is manufactured by forming a thin film on the surface of a non-contact portion that is not in contact with another resin film that is being conveyed while being curved.

here,
(2) When forming a thin film on the surface of the non-contact portion, the thin film may be formed while applying a tension within a range of 10N to 25N to the non-contact portion.

further,
(3) When a thin film is formed on the surface of the non-contact portion, the film thickness may be 100 nm or less in one film formation.

Furthermore,
(4) When a copper thin film is formed on the surface of the non-contact portion with a sputtering cathode, the film thickness may be 100 nm or less.

Furthermore,
(5) A plurality of guide rolls are arranged apart from each other so that the resin film is conveyed while being curved,
(6) The back surface of the resin film is brought into contact with the plurality of guide rolls and conveyed while curving the resin film,
(7) You may form a thin film in the surface of the said non-contact part of the resin film located between one guide roll among these several guide rolls, and the guide roll adjacent to this one guide roll.

The vacuum film formation method of the present invention for achieving the above object is a vacuum film formation method for forming a thin film on the surface of a resin film.
(8) A thin film is formed on the surface of a non-contact portion that is not in contact with the other of the resin films conveyed while being curved.

here,
(9) The thin film may be formed while applying a tension within a range of 10N to 25N to the non-contact portion.

further,
(10) A film thickness of 100 nm or less may be formed in one film formation.

Furthermore,
(11) When a copper thin film is formed on the surface of the non-contact portion with a sputtering cathode, the film thickness may be 100 nm or less.

Furthermore,
(12) A plurality of guide rolls are arranged apart from each other so that the resin film is conveyed while being curved,
(13) The back surface of the resin film is brought into contact with the plurality of guide rolls and conveyed while curving the resin film,
(14) You may form a thin film in the surface of the said non-contact part of the resin film located between one guide roll among these several guide rolls, and the guide roll adjacent to this one guide roll.

In order to achieve the above object, the vacuum film-forming apparatus of the present invention forms a thin film on the surface of the resin film being conveyed while the resin film is being conveyed and conveyed from an unwinding roll in which the resin film is wound into a roll. In a vacuum film forming apparatus for winding a resin film on which a thin film is formed with a winding roll,
(15) a plurality of guide rolls for guiding the resin film so that the resin film is conveyed through a non-linear conveyance path formed between the unwinding roll and the winding roll;
(16) A sputtering cathode for forming a thin film on a resin film located between one guide roll of the plurality of guide rolls and a guide roll adjacent to the one guide roll is provided. Is.

here,
(17) The plurality of guide rolls guide the resin film while being in contact with the back surface of the resin film,
(18) The sputtering cathode may be one in which a thin film is formed on the surface of the resin film.

further,
(19) The conveyance path may be formed in any one of a circumferential shape, a trapezoidal shape, and a polygonal shape.

Furthermore,
(20) The plurality of guide rolls may be arranged apart by a distance within a range of 10 cm to 90 cm.

Furthermore,
(21) You may provide the can roll which the refrigerant | coolant was introduce | transduced into the inside arrange | positioned next to any guide roll among these guide rolls.

Furthermore,
(22) You may provide the 2nd sputtering cathode which forms the thin film in the surface arrange | positioned in the position facing the surface of the part which contacted the said can roll among the said resin films.

Furthermore,
(23) You may provide the nip roll which changes the tension | tensile_strength which acts on this resin film by pinching | interposing the said resin film between the said can rolls.

Furthermore,
(24) Of the plurality of guide rolls, one of the guide rolls not adjacent to the unwinding roll or the winding roll is a tension detection roll that detects a tension acting on the resin film being conveyed. Also good.

In addition, another vacuum film forming apparatus for achieving the above object is provided by feeding the film from an unwinding roll in which a polyethylene naphthalate film or a polyimide film is wound into a roll shape and transporting the film while transporting the film. A nickel or nickel alloy thin film layer having a film thickness of 3 nm to 30 nm is formed on the surface, and then a copper thin film layer having a film thickness of 50 nm to 200 nm is formed on the surface of the alloy thin film layer. In a vacuum film forming apparatus for winding the film with a winding roll,
(25) The width of the film is within a range of 20 cm or more and 80 cm or less, and the transport path of the film is 10 cm or more and 90 cm or less so as to be any one of a circumferential shape, a trapezoidal shape, and a polygonal shape. A plurality of guide rolls arranged at a distance within a range; and
(26) a first sputtering cathode for forming a nickel or nickel alloy thin film layer on the film located between one guide roll of the plurality of guide rolls and a guide roll adjacent to the one guide roll; ,
(27) Among the plurality of guide rolls, the guide roll is positioned between another guide roll positioned on the upstream side in the transport direction with respect to the adjacent guide roll and the guide roll adjacent to the other guide roll. A second sputtering cathode for forming a copper thin film layer on the film on which the nickel or nickel alloy thin film layer is formed;
(28) The portion of the film facing the second sputtering cathode is provided with a tension applying mechanism that applies a tension within a range of 10N to 25N.

  The term “non-linear conveyance path” here means that there is a non-linear portion between the unwinding roll and the winding roll, and the non-contact portion to be formed in the resin film. Is linear, as will be described later with reference to the drawings.

  According to the present invention, a weak (low) tension can be applied to the non-contact portion by curving the resin film before and after the non-contact portion, and the non-contact portion is in contact with the other. As a result, there is no partial heating or cooling, and a uniform temperature is maintained. Therefore, when a thin film is formed on the surface of such a non-contact portion so that the resin film does not exceed a predetermined temperature during film formation, and then a wiring pattern is formed, the weak acting on the resin film. Even if the tension is partially released, the wiring pattern is not deformed or displaced due to the released weak tension. Therefore, it can contribute to further refinement of the wiring pattern. In addition, since the tension acting on the non-contact portion during film formation is weak, the portion of the resin film where the wiring is formed (the portion where the tension is not released) is the portion where the wiring is not formed (the portion where the tension is not released). There is little influence from the portion where the tension is released, and good adhesion between the resin film and the thin film is maintained.

  The present invention has been realized in a vacuum film forming apparatus in which a thin film of nickel (or nickel alloy) is formed on a resin film and a thin film of copper is laminated thereon.

  With reference to FIG. 1 and FIG. 2, an example of the vacuum film-forming apparatus of this invention is demonstrated. FIG. 1 is a side view schematically showing an example of a vacuum film forming apparatus of the present invention. FIG. 2 is an explanatory diagram for explaining a holding angle. Here, an example of a vacuum film forming method for forming a metal thin film on a long resin film using the vacuum film forming apparatus of FIG. 1 will be described. By this vacuum film formation method, the laminated substrate referred to in the present invention is manufactured. A polyimide film is used as the long resin film, a nickel (or nickel alloy) thin film is formed by sputtering on the surface of the polyimide film, and a copper thin film is formed by sputtering on the nickel (or nickel alloy) thin film. The nickel (or nickel alloy) thin film layer is called a seed layer (underlayer) and has a thickness of 3 nm to 30 nm. The film thickness of the copper thin film layer is 50 nm to 200 nm. The thickness of these thin films is appropriately selected. In addition, as a long resin film, it is not limited to a polyimide film, A polyethylene naphthalate film (PEN film) etc. are selected suitably. Further, the thin film is not limited to a metal thin film such as a nickel (or nickel alloy) thin film or a copper thin film, and an oxide thin film can be appropriately selected.

The vacuum film forming apparatus 10 includes a cylindrical vacuum chamber 12 and a vacuum pump that reduces the pressure to a pressure within the range of 10 ⁻⁴ Pa to 1 Pa (an example of a vacuum according to the present invention). Yes. A cryocoil or the like may be provided to increase the exhaust speed of the entire system by adsorbing the moisture of the vacuum pump. Various members and parts such as an unwinding roll 14, a winding roll 16, and guide rolls 21 to 28 described later are arranged inside the vacuum chamber 12. The cylindrical vacuum chamber 12 extends in a direction orthogonal to the paper surface of FIG. 1, and various rolls also extend in a direction orthogonal to the paper surface. The vacuum chamber 12 may have any shape as long as the inside thereof can be depressurized to a predetermined pressure (for example, a pressure within a range of 10 ⁻⁴ Pa to 1 Pa). Further, the vacuum chamber 12 is arranged such that a later-described unwinding roll 14 and a winding roll 16 are on the upper side and the sputtering cathode 43 is on the lower side.

  In the vacuum chamber 12, an unwinding roll 14 in which the resin film F is rolled is disposed. The unwinding roll 14 is a drive roll, and the resin film F is sent out from the unwinding roll 14, and the sent-out resin film F is conveyed in the direction of arrow H while being curved along the inner peripheral wall of the cylindrical vacuum chamber 12. During this conveyance, a thin film is formed on the surface of the resin film F, and the formed resin film F is taken up by the take-up roll 16. This winding roll 16 is also a drive roll. The unwinding roll 14 and the winding roll 16 rotate forward and backward, and by changing the rotation direction, the winding roll 16 can function as the unwinding roll 14 and the unwinding roll 14 can function as the winding roll 16. .

  The resin film F is conveyed while being guided along a circumferential conveyance path along the inner circumferential wall of the vacuum chamber 12 (when viewed three-dimensionally, a cylindrical inner circumference). For this guidance, guide rolls 21, 22, 23, 24, a can roll 30, a nip roll 31, and guide rolls 25, 26, 27, and 28 are arranged on the substantially circumferential line in this order. Accordingly, the resin film F fed from the unwinding roll 14 is guided by each roll and is conveyed to the winding roll 16 through a non-linear conveyance path while being curved. However, the “non-linear conveyance path” means that there is a non-linear portion between the unwinding roll 14 and the winding roll 16, and the non-film formed in the resin film F is not formed. The contact portion is linear as shown in FIG.

  The back surface of the resin film F is in contact with the outer peripheral surfaces of the guide rolls 21 to 28 and the can roll 30, and the surface of the resin film F is in contact with the outer peripheral surface of the nip roll 31. Here, the tension applied to the resin film F can also be changed depending on whether the resin film F is sandwiched (nipped) between the nip roll 31 and the can roll 30 or not. When the resin film F is sandwiched between the nip roll 31 and the can roll 30, different tensions can be applied to the resin film F with the nip roll 31 as a boundary, and the nip roll 31 is separated from the can roll 30 to sandwich the resin film F. When not, the tension acting on the resin film F is constant between the unwinding roll 14 and the winding roll 16.

  The guide rolls 21 to 28 and the nip roll 31 are driven rolls, and the can roll 30 is a drive roll. However, the driven roll and the drive roll may be changed as appropriate. Of the guide rolls 21 to 28, the two guide rolls 23 and 26 also serve as tension detection rolls for detecting the tension acting on the resin film F, and well-known load cells are arranged on the bearings of the two guide rolls 23 and 26. Has been. The nip roll 31 is made of metal, or the surface of the metal roll is covered with rubber (NBR, silicone, viton, etc.), and the surface is preferably a rubber roll.

  The can roll 30 has a refrigerant such as an organic solvent introduced therein and circulates, and the resin film F in contact with the outer peripheral surface of the can roll 30 is cooled by this refrigerant. The outer diameter of the can roll 30 is 100 cm or less, and it is desirable that the outer diameter is within a range of 40 cm to 60 cm. In the experimental example described later, the diameter of the can roll 30 was 40 cm. The temperature of the refrigerant circulating in the can roll 30 is preferably −5 ° C. to −100 ° C. Moreover, you may give the hard chrome plating to the surface of the can roll 30 and the guide rolls 21-28. The guide rolls 21 to 28 may be configured as a can roll 30 and may be a roll of a type that circulates the refrigerant.

  The nip roll 31 is a roll for changing the tension acting on the resin film F before and after the nip roll 31 depending on whether or not the resin film F is sandwiched (clamped) with the can roll 30. By sandwiching the resin film F between the nip roll 31 and the can roll 30, the resin film F is pressed against the surface of the can roll 30, and the tension acting on the resin film F before and after the pressed portion is changed. When the nip roll 31 is separated from the can roll 30 and the resin film F is not sandwiched between the two rolls (when the nip roll 31 is moved away from the guide roll 25), the surface of the can roll 30 is shown in FIG. The resin film F that has left is not bent by the nip roll 31 and is stretched without slack by the guide roll 25. On the contrary, when the resin film F is sandwiched between the nip roll 31 and the guide roll 25 (when the nip roll 31 is brought close to the guide roll 24), the surface of the can roll 30 is separated as shown in FIG. The resin film F is bent by the nip roll 31 and is stretched by the guide roll 25 without slack. As a result, as shown in FIG. 2, the holding angle θ1 when the resin film F is not sandwiched between the nip roll 31 and the can roll 30 is the holding angle θ2 when the resin film F is sandwiched between the nip roll 31 and the can roll 30. Slightly smaller than. As shown in FIG. 2, the holding angle here refers to a straight line connecting the position where the resin film F starts to contact the outer peripheral surface of the can roll 30 to the rotation center c of the can roll 30, and the resin film F The angle formed by the straight line connecting the position starting from the outer peripheral surface of the roll 30 to the rotation center c of the can roll 30 is defined. The can roll 30 is provided as appropriate, and FIG. 1 shows an example of the vacuum film forming apparatus 10 in which the can roll 30 is arranged, but the can roll 30 may not be provided.

  The guide roll 22 and the guide roll 23 are separated by a distance within a range of 10 cm or more and 90 cm or less for the reason described later. The distance here is not the distance from the rotation center of the guide roll 22 to the rotation center of the guide roll 23, but from the position where the resin film F starts to move away from the outer peripheral surface of the guide roll 22. It means the distance to the position where it starts to contact the outer peripheral surface. The part between the guide roll 22 and the guide roll 23 in the resin film F is a non-contact part Fh that is not in contact with the other, and copper sputtering is provided at a position facing the surface of the non-contact part Fh. A sputtering cathode 41 having a target is arranged. By operating the sputtering cathode 41, a copper thin film is formed on the surface of the non-contact portion Fh.

  The guide roll 23 and the guide roll 24 are also separated by a distance in the range of 10 cm to 90 cm for the reason described later. The distance here is the same as the above distance. A portion of the resin film F between the guide roll 23 and the guide roll 24 is a non-contact portion Fh that is not in contact with the other, and copper sputtering is provided at a position facing the surface of the non-contact portion Fh. A sputtering cathode 42 having a target is disposed. By operating the sputtering cathode 42, a copper thin film is formed on the surface of the non-contact portion Fh.

  A can roll 30 is disposed between the guide roll 24 and the guide roll 25. The resin film F is conveyed while the back surface thereof is in contact with the outer peripheral surface of the can roll 30. A sputtering cathode 43 having a nickel (or nickel alloy) sputtering target is disposed at a position facing the contacting portion. By operating the sputtering cathode 43, a nickel (or nickel alloy) thin film is formed on the surface of the contact portion.

  The guide roll 25 and the guide roll 26 are also separated by a distance in the range of 10 cm or more and 90 cm or less for the reason described later. The distance here is the same as the above distance. A portion of the resin film F between the guide roll 25 and the guide roll 26 is a non-contact portion Fh that is not in contact with the other, and copper sputtering is provided at a position facing the surface of the non-contact portion Fh. A sputtering cathode 44 having a target is arranged. By operating the sputtering cathode 44, a copper thin film is formed on the surface of the non-contact portion Fh.

  The guide roll 26 and the guide roll 27 are also separated by a distance in the range of 10 cm to 90 cm for the reason described later. The distance here is the same as the above distance. A portion of the resin film F between the guide roll 26 and the guide roll 27 is a non-contact portion Fh that is not in contact with the other, and copper sputtering is provided at a position facing the surface of the non-contact portion Fh. A sputtering cathode 45 having a target is disposed. By operating the sputtering cathode 45, a copper thin film is formed on the surface of the non-contact portion Fh.

  Here, regarding the guide rolls 22, 23, 24, 25, 26, and 27, the distance and positional relationship between adjacent guide rolls will be described.

  The tension acting (applied) to the portion from the nip roll 31 to the take-up roll 16 in the resin film F being conveyed in the direction of the arrow H is controlled to be in the range of 10N to 25N. The reason for this is that slack occurs in the resin film F at a tension of less than 10N, while a film (for example, a copper layer) formed on the surface of the resin film F is processed by chemical etching or the like at a tension of more than 25N. This is because later dimensional stability cannot be ensured. Therefore, the tension | tensile_strength in the range of 10N or more and 25N or less is provided to the part (non-contact part Fh) formed by sputtering cathodes 44 and 45 among the resin films F. When the copper film is formed by reciprocating the resin film F (conveyed in the opposite direction after being conveyed in the direction of arrow H), the film is formed by the sputtering cathodes 41 and 42 in the resin film F. Control is performed so that tension within the range of 10N to 25N is also applied to the portion (non-contact portion Fh).

  When a tension within the range of 10N to 25N is applied to the non-contact portion Fh, the distance between the guide roll 25 and the guide roll 26 (this distance is as defined above, hereinafter also referred to as roll interval). The range is from 10 cm to 90 cm. When this distance is less than 10 cm, a sputtering cathode cannot be disposed between adjacent guide rolls. When this distance exceeds 90 cm, if the tension acting on the non-contact part Fh is not more than 25 N, the resin film F may be loosened and the resin film F may be wrinkled. This distance is most preferably within the range of 30 cm to 50 cm.

  The positions of the guide rolls 22, 23, 24, 25, 26, 27 will be described.

  The positions of the guide rolls 22, 23, 24, 25, 26, and 27 are determined so that the elevation angle of the non-contact portion Fh with respect to the horizontal plane is within a certain range. As shown in FIG. 1, the non-contact part Fh of the resin film F is not parallel to the horizontal plane. The positions of the guide rolls 22, 23, 24, 25, 26, and 27 are determined so that the elevation angle of the non-contact portion Fh is an angle of 30 ° or more with respect to the horizontal plane. In this way, by setting the elevation angle of the non-contact portion Fh to an angle of 30 ° or more with respect to the horizontal plane, the tension acting on the non-contact portion Fh is 10 N or more and 25 N within the range of the roll interval of 10 cm or more and 90 cm or less. It is securely within the following range. The resin film F sags due to gravity, and if this sag increases, wrinkles in the longitudinal direction of the resin film F occur. By setting the elevation angle of the resin film F to 30 ° or more, the sag of the film of the resin film F can be reduced. When it is assumed that a film is formed on a horizontal (zero elevation angle) non-contact portion Fh on which a tension within a range of 10N or more and 25N or less is applied, the roll interval is 40 cm at most due to the influence of the dripping of the resin film F. When the non-contact part Fh of the resin film F hangs vertically (so that the elevation angle is 90 °), the non-contact part Fh hangs down due to gravity when the film is formed on a film whose roll interval exceeds 90 cm. There is no problem, so it is considered that there will be no problem. However, when the roll interval exceeds 90 cm, wrinkles may occur in the longitudinal direction of the non-contact portion Fh because the tension acting on the non-contact portion Fh is low. When the vacuum film forming apparatus 10 shown in FIG. 1 is laid down, that is, when the resin film F is conveyed in an upright state, the winding roll 16 may be unwound due to gravity, which is not preferable.

  A straight line connecting the position where the resin film F starts to contact the outer peripheral surface of the guide roll 22 (the same applies to the guide rolls 23, 24, 25, 26, and 27) to the center of the guide roll 22, and the resin film F is the guide roll It is preferable that an angle (a holding angle, see FIG. 2) formed by a straight line connecting the position starting from the outer peripheral surface of 22 and the center of the guide roll 22 is in a range of 10 ° to 90 °. When the holding angle is less than 10 °, the contact surface between the resin film F and the guide roll 22 is narrow, so that the resin film F may slide on the outer peripheral surface of the guide roll 22 without causing the guide roll 22 to rotate. . On the other hand, when the holding angle exceeds 90 °, the resin film F may be wrinkled by the play of the resin film F. That is, the resin film F tightens the guide roll 22 (the guide roll 22 becomes difficult to rotate), and the resin film F is not completely flat and the thickness is not strictly uniform in the width direction. This causes a conveyance shift and causes wrinkles.

  The diameter of the guide roll 22 (the same applies to the guide rolls 23, 24, 25, 26, and 27) will be described.

  The diameter (outer diameter) of the guide roll 22 is in the range of 5 cm to 15 cm. If the diameter is less than 5 cm, the contact surface between the resin film F and the guide roll 22 is too narrow and the guide roll 22 does not rotate, and the resin film F slides on the outer peripheral surface of the guide roll 22. The surface and the resin film F may be damaged. On the other hand, when the diameter of the guide roll 22 exceeds 15 cm, the mass of the guide roll 22 increases (mechanical loss increases), and the guide roll 22 is less likely to be driven and rotated depending on the transport of the resin film F. Since the film F may slide on the outer peripheral surface of the guide roll 22, the outer peripheral surface and the resin film F may be damaged. Such a problem occurs when the guide roll 22 is a driven roll, and when the guide roll 22 is a drive roll, there is no limitation on the diameter. However, using all these guide rolls as drive rolls and controlling their rotation causes an increase in cost and failure.

  As described above, when sputtering film formation is performed between two guide rolls (between one guide roll and a guide roll adjacent to this one guide roll), the distance between the two guide rolls is too long. Since it is easy for slack to occur in the resin film F, it is necessary to increase the tension applied to the resin film F. However, when the tension becomes too high, the resin film F continues to be pulled strongly, so that wrinkles are formed on the resin film F by the heat of sputtering film formation and the heat of surface treatment. The distance between the adjacent guide rolls is within a range of 10 cm or more and 90 cm or less, preferably 30 cm or more and 50 cm or less, in order not to cause the resin film F to sag and to form wrinkles due to heat. Within range.

  The tension applied (applied) to the resin film F will be described.

  As described with reference to FIG. 2, the tension acting on the resin film F before and after the nip roll 31 can be changed depending on whether or not the resin film F is sandwiched between the can roll 30 and the nip roll 31. Further, the tension acting on the resin film F can be changed by controlling the axial torque of the unwinding roll 14 and the winding roll 16. When transporting the resin film F by changing the tension acting on the resin film F, the tension in the transport direction (arrow H direction) acting on the contact portion on which the seed layer is formed is within a range of 25N to 80N. To be. The tension in the transport direction (arrow H direction) acting on the non-contact portion Fh on which the copper thin film is subsequently formed after the seed layer is formed is set in the range of 10N to 25N.

  The reason why the tension in the transport direction within the range of 25N or more and 80N or less is applied to the contact portion is to make the contact portion uniformly contact and contact the outer peripheral surface of the can roll 30. For this reason, when forming a seed layer in a contact part, a contact part does not deform | transform partially or break. According to the inventor's research, when the width of the resin film F (the length in the direction perpendicular to the paper surface of FIG. 1) is in the range of 20 cm or more and 80 cm or less, the above tension is applied regardless of the thickness. When it was done, it was confirmed that a wiring pattern does not deform | transform and shift | deviates and the favorable adhesiveness of the resin film F and a copper thin film is also maintained. The reason why the tension is unrelated to the cross-sectional area of the long resin film is unknown. When the width of the long resin film exceeds 80 cm, it is determined by appropriately checking the tension.

  The tension acting on the portion of the resin film F being conveyed from the unwinding roll 14 to the nip roll 31, that is, the tension acting on the contact portion where the seed layer is formed by the sputtering cathode 43 is a tension detecting roll (guide roll). By controlling the shaft torque of the unwinding roll 14 while detecting the tension at 23, the optimum value is controlled. As a method for detecting the tension of the tension detection roll 23, for example, a load cell or the like may be disposed on the bearing of the roll. In the present embodiment, as described above, it is desirable to control the tension acting on the portion from the unwinding roll 14 to the nip roll 31 in the resin film F being conveyed to be in the range of 25N to 80N.

  The tension acting on the portion of the resin film F being conveyed from the nip roll 31 to the take-up roll 16, that is, the tension acting on the non-contact portion Fh where the copper thin film layer is formed by the sputtering cathodes 44 and 45 is detected by the tension detection. By controlling the shaft torque of the winding roll 16 while detecting the tension with the roll (guide roll) 26, the optimum value is controlled. As a method of detecting the tension of the tension detection roll 26, for example, a load cell or the like may be disposed on the bearing of the roll. In the present embodiment, as described above, it is desirable to control the tension acting on the portion of the resin film F being conveyed from the nip roll 31 to the take-up roll 16 to be in the range of 10N to 25N. As described above, slack occurs in the long resin film F at a tension of less than 10N. On the other hand, when the tension exceeds 25 N, the dimensional stability after a pattern (such as a copper layer) formed on the surface of the long resin film F is processed by chemical etching cannot be secured.

  When a laminated substrate is manufactured by forming a thin film on the resin film F using the vacuum film forming apparatus 10 described above, 25 N or more is provided in a portion between the unwinding roll 14 and the nip roll 31 in the resin film F. While the tension in the range of 80 N or less is applied and the tension in the range of 10 N or more and 25 N or less is applied to the portion between the nip roll 31 and the take-up roll 16, the sputtering cathodes 41 and 42 are brought into a non-operating state. The sputtering cathodes 43, 44 and 45 are operated. By operating the sputtering cathode 43, a nickel (or nickel alloy) thin film is formed on the surface of the contact portion of the resin film F. This thin film serves as an underlayer, and a copper thin film is formed on the undercoat layer by the sputtering cathode 44. Subsequently, a copper thin film is formed on the copper thin film by the sputtering cathode 45. (Second film formation).

  When it is desired to form a copper thin film that is thicker than the copper thin film formed by the two sputtering cathodes 44 and 45, the copper thin film is formed by the two sputtering cathodes 44 and 45, and then the unwinding roll 14 and the winding roll 16. The copper thin film is formed while the resin film F is conveyed in the reverse direction (the direction opposite to the arrow H direction). In this case, four sputtering cathodes 41, 42, 44, 45 are selectively used according to the thickness of the copper thin film to be formed. When the resin film F is reversely conveyed, a tension within a range of 10N or more and 25N or less is applied to all portions of the resin film F. When a thicker copper thin film layer is required, the sputtering cathodes 41, 42, 44, and 45 are selectively used while the resin film F is conveyed forward again. Also in this case, the tension within the range of 10N or more and 25N or less is applied to all portions of the resin film F.

  The portions of the resin film F that face the sputtering cathodes 41, 42, 44, and 45 are non-contact portions Fh that are not in contact with other objects, and therefore are not cooled by the can roll 30 or the like. Therefore, in order to prevent the non-contact portion Fh from being deformed by the heat of sputtering, the thickness of the copper thin film when the film is formed at the sputtering cathode between the adjacent guide rolls (for example, between the guide rolls 25 and 26) is It is limited to 100 nm or less. When the film is formed with a film thickness exceeding 100 nm at the sputtering cathode between adjacent guide rolls, the temperature of the non-contact portion Fh exceeds 300 ° C., and the cause of wrinkles is generated even if the resin film F is a polyimide film It becomes. In consideration of productivity, the film thickness when forming a film at a time with the cathode between adjacent guide rolls is preferably within the range of 40 nm to 100 nm. Note that “one film formation when forming a thin film on the surface of the non-contact portion” means “forming a thin film on the surface of the non-contact portion between adjacent guide rolls”.

  Any of the above-described guide rolls 21 to 28 is disposed in front of and behind the non-contact portion Fh (upstream and downstream in the transport direction), and the front and rear of the non-contact portion Fh are curved. By curving the resin film F in this way, a weak (low) tension can be applied to the non-contact part Fh of the resin film, and since this non-contact part Fh is not in contact with other things, There is no partial heating or cooling, and a uniform temperature is maintained. Accordingly, a thin film is formed on the surface of the non-contact portion Fh so that the resin film F does not exceed a predetermined temperature during film formation, and a multilayer substrate is manufactured, and chemical etching or the like is performed on the multilayer substrate. When the wiring pattern is formed, even if the weak tension acting on the resin film F is partially released, the wiring pattern is not deformed or displaced due to the released weak tension. Therefore, it can contribute to further refinement of the wiring pattern.

  As described above, the copper thin film is formed on the surface of the non-contact portion Fh of the resin film F, but the seed layer is formed on the contact portion of the resin film F that is in contact with the outer peripheral surface of the can roll 30. The Therefore, a strong tension is applied to the contact portion where the seed layer is formed so that the contact portion is brought into close contact with the can roll 30. As described above, since the contact portion is brought into close contact with the can roll 30 and cooled, high electric power can be applied to the cathode when the seed layer is formed. As a result, since the density of the sputtered particles is improved, a seed layer with few impurities can be formed by film formation, and the adhesion strength is improved. However, since the film thickness of the seed layer is in the range of 3 nm to 30 nm and this film thickness is thinner than the thickness of the copper thin film from 50 nm to 200 nm, the seed layer has a weak force to suppress the movement of the contact portion. The tension acting on the contact portion is released after the film formation. Therefore, there is almost no tension remaining in the resin film F due to the formation of the seed layer. In addition, a well-known magnetron system etc. can be used as a sputtering cathode.

  When the resin film F is transported back and forth with the vacuum film forming apparatus 10 to form a film (when the film is formed while being conveyed in the direction of arrow H, and after this film formation, the film is formed while being conveyed in the direction opposite to the arrow H direction) ) Is controlled so that the tension acting on the portion from the unwinding roll 14 to the nip roll 31 in the resin film F being conveyed is within the range of 25N to 80N as described above in the outward path, Of the resin film F is controlled so that the tension acting on the portion from the nip roll 31 to the take-up roll 16 falls within the range of 10N to 25N. On the return path, the position and unwinding of the nip roll 31 are set so that the tension in the entire portion of the resin film F being transported (portion from the winding roll 16 to the unwinding roll 14) is within the range of 10N to 25N. The shaft torque of the roll 14 and the take-up roll 16 is adjusted and controlled. In the above example, film formation by a sputtering method has been described as an example. However, the vacuum film formation method of the present invention is not limited to sputtering, and various film formation methods such as vapor deposition can be used.

  A modification of the vacuum chamber will be described with reference to FIG. FIG. 3 is a side view showing a rectangular vacuum chamber. 3, the same components as those shown in FIG. 1 are denoted by the same reference numerals.

  In the vacuum film forming apparatus 10 described above, the cylindrical vacuum chamber 12 is used. However, the vacuum chamber 12 is not limited to the cylindrical shape, and a square columnar vacuum chamber (a square cross section) may be used as shown in FIG. . The position and number of guide rolls may be changed as appropriate. Further, a vacuum chamber having a trapezoidal or polygonal cross section may be used.

Experimental examples 1 and 2 experimented using the vacuum film forming apparatus 10 will be described in comparison with comparative examples 1 and 2 experimented using the conventional vacuum film forming apparatus. In these experimental examples and comparative examples, the adhesion of the thin film and the dimensional accuracy of the wiring pattern were tested as shown in (1) and (2) below. Regarding the transportability, the presence or absence of wrinkles during transport was examined.
(1) Evaluation of adhesion of the film to the resin film was based on “Method A (90 ° direction peeling)” of JIS C6471-1995 8.1 “Peeling Strength Test”.
(2) The dimensional accuracy of the wiring pattern was evaluated in accordance with JIS C6471-1995 9.6 “Dimensional stability test”.

In these experiments, when forming a film with the vacuum film forming apparatus 10, the pressure in the vacuum chamber 12 is evacuated to 5 × 10 ⁻⁶ Torr, and immediately after that, Ar gas is introduced into the vacuum chamber 12, Sputtering was performed at 2 × 10 ⁻³ Torr. The distance between the guide rolls 22 and 23, between the guide rolls 23 and 24, between the guide rolls 25 and 26, and between the guide rolls 26 and 27 is 40 cm, and each guide roll has a diameter of 10 cm. The elevation angle between the rolls 24, 23 was 30 °, the elevation angle between the guide rolls 25, 26 was 30 °, and the elevation angles of the guide rolls 22, 23, 26, 27 were 90 °. Furthermore, the width of the polyimide film was 500 mm unless otherwise specified.

  Experimental Example 1 A 38 μm-thick polyimide film (registered trademark “Kapton 150EN” manufactured by Toray DuPont Co., Ltd.) is wound around the unwinding roll 14 of the vacuum film forming apparatus 10 in a roll shape, and the polyimide film is sent out from the unwinding roll 14. It was made to run so that it might be wound up by the winding roll 16 (it was conveyed). The conveyance speed of the polyimide film was 1 m / min. The nip roll 31 is pressed against the can roll 30 to control the axial torque of the unwinding roll 14 so that the tension detected by the tension detection roll 23 becomes 40N, and the tension detected by the tension detection roll 26 becomes 15N. Thus, the nip roll 31 was pressed against the can roll 30 to control the axial torque of the take-up roll 16. In this way, a Ni-7Cr film having a film thickness of 10 nm was formed on the polyimide film during transport using the sputtering cathode 43, and then a copper film having a film thickness of 50 nm was formed on each of the sputtering cathodes 44 and 45 (in total). A copper thin film of 8 μm was formed on these laminates by electroplating.

  Experimental Example 2. A polyimide film (same as above) having a thickness of 38 μm is wound around the unwinding roll 14 of the vacuum film forming apparatus 10 so that the polyimide film is fed from the unwinding roll 14 and wound around the winding roll 16. Traveled (conveyed). The conveyance speed of the polyimide film was 1 m / min. The position of the nip roll 31 and the axial torque of the unwinding roll 14 are controlled so that the tension detected by the tension detection roll 23 is 15N, and the tension detected by the tension detection roll 26 is 15N. The position of the nip roll 31 and the axial torque of the take-up roll 16 were controlled. In this way, a Ni-7Cr film having a film thickness of 10 nm was formed on the polyimide film during transport using the sputtering cathode 43, and then a copper film having a film thickness of 50 nm was formed on each of the sputtering cathodes 44 and 45 (in total). A copper thin film of 8 μm was formed on these laminates by electroplating.

  Experimental Example 3. The position of the nip roll 31 and the axial torque of the unwinding roll 14 are controlled so that the tension detected by the tension detection roll 23 is 10N, and the tension detected by the tension detection roll 26 is 10N. The position of the nip roll 31 and the axial torque of the take-up roll 16 were controlled. Others were the same as in Experimental Example 2.

  Experimental Example 4 The position of the nip roll 31 and the axial torque of the unwinding roll 14 are controlled so that the tension detected by the tension detection roll 23 is 25N, and the tension detected by the tension detection roll 26 is 25N. The position of the nip roll 31 and the axial torque of the take-up roll 16 were controlled. Others were the same as in Experimental Example 2.

  Experimental Example 5. As the resin film F, a polyimide film having a width of 200 mm and a thickness of 38 μm was used. Others were the same as in Experimental Example 2.

  Experimental Example 6. As the resin film F, a polyimide film having a width of 500 mm and a thickness of 25 μm was used. Others were the same as in Experimental Example 2.

  Experimental Example 7. As the resin film F, a polyimide film having a width of 500 mm and a thickness of 50 μm was used. Others were the same as in Experimental Example 2.

  Experimental Example 8. As the resin film F, a polyimide film having a width of 700 mm and a thickness of 38 μm was used. Others were the same as in Experimental Example 2.

  Experimental Example 9. The guide rolls 26 and 27 are removed from the vacuum film forming apparatus 10 shown in FIG. 1, and a polyimide film is stretched between the guide rolls 25 and 28 so that the distance between the guide rolls 25 and 28 is 80 cm. The input power was adjusted so as to form a copper film with a thickness of 100 nm. Others were formed in the same manner as in Example 2.

  Comparative Example 1 An experiment was conducted using the vacuum film forming apparatus shown in FIG. 1 of the above-mentioned Patent Document 1 (Japanese Patent Laid-Open No. 63-310960). However, the same thing as the sputtering cathode 43 of this embodiment is arranged in the box 27 in FIG. 1, and the same thing as the sputtering cathode 44 of this embodiment is arranged instead of the evaporation source 30. Using the vacuum film forming apparatus configured as described above, a polyimide film (same as above) having a thickness of 38 μm is supplied to the supply roll 11 (reference numeral attached to FIG. 1 of Patent Document 1, and the unwinding roll 14 of this embodiment). The polyimide film is sent out from the supply roll 11 and is taken up by the take-up roll 20 (reference numeral attached to FIG. 1 of Patent Document 1, which corresponds to the take-up roll 16 of this embodiment). )) So that it was wound up. It was 15N when the tension | tensile_strength which acts on the polyimide film in conveyance was detected. A Ni-7Cr film having a film thickness of 10 nm was formed on the same sputtering cathode as the sputtering cathode 43, and a copper thin film having a film thickness of 100 nm was formed on the same sputtering cathode as the sputtering cathode 44. Canceled.

  Comparative Example 2 Using the same vacuum film forming apparatus as in Comparative Example 1, a polyimide film (same as above) with a thickness of 38 μm is supplied to the supply roll 11 (reference numeral attached to FIG. 1 of Patent Document 1 and the unwinding roll 14 of this example). The polyimide film is sent out from the supply roll 11 and is taken up by the take-up roll 20 (reference numeral attached to FIG. 1 of Patent Document 1, which corresponds to the take-up roll 16 of this embodiment). )) So that it was wound up. It was 60N when the tension | tensile_strength which acts on the polyimide film in conveyance was detected. A Ni-7Cr film having a film thickness of 10 nm is formed on the same sputtering cathode as the sputtering cathode 43, a copper thin film having a film thickness of 100 nm is formed on the same sputtering cathode as the sputtering cathode 44, and copper is 8 μm by electroplating on the surface of the copper thin film. Was deposited.

  Comparative Example 3 In Comparative Example 3 and later, the vacuum film forming apparatus 10 shown in FIG. 1 was used, but the experiment was performed by changing the tension and the like. Comparative Example 3 is an example in which the tension is changed. In Comparative Example 3, the position of the nip roll 31 and the axial torque of the unwinding roll 14 are controlled so that the tension detected by the tension detecting roll 23 becomes 5N. The position of the nip roll 31 and the axial torque of the take-up roll 16 were controlled so that the tension detected by the tension detection roll 26 was 5N. Others were the same as in Experimental Example 2. In Comparative Example 3, the experiment was stopped because wrinkles occurred in the polyimide film during the formation of the copper thin film.

  Comparative Example 4 The comparative example 4 is also an example in which the tension is changed. The position of the nip roll 31 and the axial torque of the unwinding roll 14 are controlled so that the tension detected by the tension detecting roll 23 is 30 N, and the tension detecting roll 26 is also controlled. The position of the nip roll 31 and the axial torque of the take-up roll 16 were controlled so that the tension detected at 30 was 30N. Others were the same as in Experimental Example 2. In Comparative Example 4, since the wrinkles occurred on the polyimide film during the formation of the copper thin film, the experiment was stopped.

  Comparative Example 5 Comparative Example 5 is an example in which the dimensions and tension of the polyimide film were changed, and a polyimide film having a width of 500 mm and a thickness of 25 μm was used. Further, the position of the nip roll 31 and the axial torque of the unwinding roll 14 are controlled so that the tension detected by the tension detection roll 23 becomes 7N, and the tension detected by the tension detection roll 26 becomes 7N. In addition, the position of the nip roll 31 and the axial torque of the take-up roll 16 were controlled. In Comparative Example 5, evaluation was stopped because wrinkles were confirmed on the polyimide film after the copper thin film was formed.

  Comparative Example 6 The guide rolls 26 and 27 are removed from the vacuum film forming apparatus 10 shown in FIG. 1, the mounting position of the guide roll 28 is changed, a polyimide film is stretched between the guide rolls 25 and 28, and the distance between the guide rolls 25 and 28. The film was formed in the same manner as in Experimental Example 2 except that the input power was adjusted so that the copper film was formed to a thickness of 100 nm with the sputtering cathode 45. Since wrinkles were confirmed after the copper thin film was formed, the evaluation was stopped.

  As described in (1) above, the adhesion evaluation conforms to the peel strength of JIS-C6471 (1995 edition) copper peel, and is a peel test in the 90 ° direction at room temperature. 50 mm / min. As a sample for adhesion evaluation, a Ni—Cr film formed on a polyimide film and copper were chemically etched to form two parallel copper lines (corresponding to a wiring pattern). The copper line was 230 mm long and 4 mm wide, and the space between the lines was 3 mm.

As described in (2) above, the evaluation of dimensional accuracy is based on the evaluation of dimensional stability of JIS-C6471 (1995 edition), and the dimensional change rate is measured before and after chemical etching and after drying. And compared. As the sample, the laminated substrates obtained in the above-described Experimental Examples 1 to 9 and Comparative Example 2 were used, and the scores shown in FIG. 4 were arranged at each of the four corners of the laminated substrate. FIG. 5 shows a plan view of a sample on which a score is arranged. The distance between the centers of the four scores is 250 mm in the vertical direction and 200 mm in the horizontal direction. 4 and 5 refer to FIG. 10 described on page 15 of the JIS. The above sample was chemically etched, dried at 80 ° C. for 30 minutes, and then left in a constant temperature bath at 150 ° C. for 30 minutes. The distance between the centers of the scores before etching and after being left in a thermostat was measured, and the dimensional change rate was calculated from the following equation according to JIS-C6471 (1995 edition).
ΔLm = ((A ₂ −A ₁ ) / A ₁ + (D ₂ −D ₁ ) / D ₁ ) × 1/2 × 100
ΔLt = ((C ₂ −C ₁ ) / C ₁ + (B ₂ −B ₁ ) / B ₁ ) × 1/2 × 100
A ₁ Distance before etching of points a and b A ₂ Distance after etching of points a and b B ₁ Distance before etching of points b and d B ₂ Distance of etching after etching of points b ₂ and d C ₁ Distance C ₂ and point a before etching C ₂ Distance c 1 and point a after etching D ₁ Distance d and point c before etching D ₂ Distance after point d and point c after etching

For chemical etching, Anotech ink resist made by Resist Hanami Chemical Co., Ltd. is screen-printed on the copper film, and etching solution of chemical component of 42 ° Baume ferric chloride aqueous solution at 43 ° C is etched with a pressure 0.2 Pa shower. And shower washed with 25 ° C. water. The above experimental results are shown in Table 1. Comparative Examples 1, 3 to 6 are not evaluated.

  As shown in Table 1, in Experiment Example 1, the conveyance speed was made faster than the other examples. The transfer speed was increased, and the power applied to the cathodes of Ni—Cr and Cu was further increased to make the thickness of each film the same. By increasing the input power, the film formation speed increased. Therefore, the transport speed was increased accordingly, and the film thickness was adjusted. In Example 1, since the sputtered particle density was high, the adhesion was high. As for the transportability, no wrinkles occurred in Experimental Examples 1 and 2, but wrinkles occurred in Comparative Examples 1 and 3-6 as described above.

  Adhesion was good with no problems in Experimental Examples 1 to 9 and Comparative Example 2.

  Regarding the dimensional accuracy, in Experimental Examples 1 to 9, ΔLm and ΔLt represented by the above equations were both 0.01 or less, but in Comparative Example 2, ΔLm represented by the above equation was −0.05 and ΔLt was 0. .04. The dimensional accuracy is an index of the tension released when the wiring pattern is formed by chemical etching, and the smaller the values of ΔLm and ΔLt, the better. The difference is 0.01 in the example and 0.04 in the comparative example, and this difference may not seem to be large. However, in the technical field of the present invention, the difference between 0.01 and 0.04 is large. In the above subtractive process, when a laminated substrate (ΔLm is −0.05 and ΔLt is about 0.04) (with a nickel thin film layer or a copper thin film layer laminated on the surface of the resin film) is used, the tension is released. This is dealt with by redesigning the mask of the photolithographic process in anticipation of the dimensional change of the laminated substrate due to the above. Wiring patterns include not only straight lines but also diagonal lines, and it is necessary to design a mask in consideration of how far these are deviated from the center of the wiring board. The design of the mask affects the increase in the man-hours for designing the wiring board. When considering future demands such as further fine patterning (further refinement of the wiring pattern), both the above ΔLm and ΔLt should be 0.01 or less. For example, there is a margin in mask design, and the man-hours for designing the wiring board can be reduced.

It is a side view which shows typically an example of the vacuum film-forming apparatus of this invention. It is explanatory drawing for demonstrating a holding angle. It is a side view which shows a square-shaped vacuum chamber. It is a figure which shows the score for dimension evaluation. It is a top view which shows the sample by which the score of FIG. 4 is arrange | positioned.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Vacuum film-forming apparatus 14 Unwinding roll 16 Winding roll 21, 22, 23, 24, 25, 26, 27, 28 Guide roll 30 Can roll 31 Nip roll 41, 42, 42, 44, 45 Sputtering cathode F Resin film Fh Non-contact part

Claims (19)

In a multilayer substrate manufacturing method for manufacturing a multilayer substrate in which a thin film is formed on the surface of a resin film in a vacuum,
A method for producing a laminated substrate, comprising: producing a laminated substrate by depositing a thin film on a surface of a non-contact portion that is not in contact with another resin film being conveyed while being curved. 2. The multilayer substrate according to claim 1, wherein when forming a thin film on the surface of the non-contact portion, the thin film is formed while applying a tension within a range of 10 N to 25 N to the non-contact portion. Production method. 3. The method for manufacturing a laminated substrate according to claim 1, wherein when forming a thin film on the surface of the non-contact portion, the film thickness is 100 nm or less in one film formation. 3. The method for manufacturing a laminated substrate according to claim 1, wherein when the copper thin film is formed on the surface of the non-contact portion with a sputtering cathode, the thickness is 100 nm or less. A plurality of guide rolls are arranged apart from each other so that the resin film is conveyed while being curved, and the resin film is conveyed while curving by bringing the back surface of the resin film into contact with the plurality of guide rolls. 2. A thin film is formed on the surface of the non-contact portion of a resin film located between one guide roll of a plurality of guide rolls and a guide roll adjacent to the one guide roll. 5 to 4. The method for manufacturing a laminated substrate according to any one of items 1 to 4. In a vacuum film formation method for forming a thin film on the surface of a resin film,
A vacuum film forming method, comprising: forming a thin film on a surface of a non-contact portion that is not in contact with another resin film being conveyed while being curved. The vacuum film forming method according to claim 6, wherein the thin film is formed while applying a tension within a range of 10 N or more and 25 N or less to the non-contact portion. 8. The vacuum film forming method according to claim 6, wherein a film thickness of 100 nm or less is formed in one film formation. The vacuum film-forming method according to claim 6 or 7, wherein a film thickness of 100 nm or less is formed when a copper thin film is formed on the surface of the non-contact portion by a sputtering cathode. A plurality of guide rolls are arranged apart from each other so that the resin film is conveyed while being curved, and the resin film is conveyed while curving by bringing the back surface of the resin film into contact with the plurality of guide rolls. 7. A thin film is formed on the surface of the non-contact portion of the resin film located between one guide roll of the plurality of guide rolls and a guide roll adjacent to the one guide roll. The vacuum film-forming method as described in any one of 9 to 9. A thin film is formed on the surface of the resin film being conveyed while the resin film is delivered and conveyed from an unwinding roll in which the resin film is wound into a roll, and the resin film on which the thin film has been formed is taken up In a vacuum film forming apparatus that winds up with
A plurality of guide rolls for guiding the resin film so that the resin film is conveyed through a non-linear conveyance path formed between the unwinding roll and the winding roll;
A vacuum film formation comprising a sputtering cathode for forming a thin film on a resin film located between one guide roll of the plurality of guide rolls and a guide roll adjacent to the one guide roll apparatus. The plurality of guide rolls guide the resin film while being in contact with the back surface of the resin film,
The vacuum deposition apparatus according to claim 11, wherein the sputtering cathode forms a thin film on the surface of the resin film. The vacuum film forming apparatus according to claim 11, wherein the transport path is formed in any one of a circumferential shape, a trapezoidal shape, and a polygonal shape. The vacuum film forming apparatus according to claim 11, wherein the plurality of guide rolls are arranged apart by a distance within a range of 10 cm to 90 cm. The can roll which the refrigerant | coolant was introduce | transduced into the inside arrange | positioned next to any guide roll among these guide rolls was provided. The vacuum film-forming apparatus described in 1. The second sputtering cathode for forming a thin film on the surface of the resin film, which is disposed at a position facing a surface of a portion in contact with the can roll. Vacuum film forming equipment. The vacuum film-forming apparatus according to claim 15 or 16, further comprising a nip roll that changes a tension acting on the resin film by sandwiching the resin film with the can roll. One of the guide rolls not adjacent to the unwinding roll or the winding roll among the plurality of guide rolls is a tension detection roll that detects the tension acting on the resin film being transported. The vacuum film-forming apparatus as described in any one of Claim 11-17. A nickel or nickel alloy thin film layer having a film thickness of 3 nm to 30 nm is formed on the surface of the film being conveyed while the film is fed out and conveyed from an unwinding roll in which a polyethylene naphthalate film or a polyimide film is wound in a roll shape. Then, in a vacuum film forming apparatus for forming a copper thin film layer having a film thickness of 50 nm to 200 nm on the surface of the alloy thin film layer, and winding the film on which these laminates are formed with a winding roll,
The width of the film is in the range of 20 cm to 80 cm, and the transport path of the film is in the range of 10 cm to 90 cm so as to be any one of a circumferential shape, a trapezoidal shape, and a polygonal shape. A plurality of guide rolls spaced apart by a distance;
A first sputtering cathode for forming a nickel or nickel alloy thin film layer on the film located between one guide roll of the plurality of guide rolls and a guide roll adjacent to the one guide roll;
Of the plurality of guide rolls, the nickel is positioned between another guide roll located on the upstream side in the transport direction with respect to the adjacent guide roll and a guide roll adjacent to the other guide roll. Or a second sputtering cathode for forming a copper thin film layer on the film on which the nickel alloy thin film layer is formed;
The vacuum film-forming apparatus provided with the tension | tensile_strength provision mechanism which provides the tension | tensile_strength in the range of 10N or more and 25N or less to the part facing the said 2nd sputtering cathode among the said films.

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