JP2009246334A5 - - Google Patents

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Publication number
JP2009246334A5
JP2009246334A5 JP2008304642A JP2008304642A JP2009246334A5 JP 2009246334 A5 JP2009246334 A5 JP 2009246334A5 JP 2008304642 A JP2008304642 A JP 2008304642A JP 2008304642 A JP2008304642 A JP 2008304642A JP 2009246334 A5 JP2009246334 A5 JP 2009246334A5
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JP
Japan
Prior art keywords
thermosetting resin
resin composition
alkoxide
light reflection
alumina
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Pending
Application number
JP2008304642A
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Japanese (ja)
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JP2009246334A (en
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Priority to JP2008304642A priority Critical patent/JP2009246334A/en
Priority claimed from JP2008304642A external-priority patent/JP2009246334A/en
Publication of JP2009246334A publication Critical patent/JP2009246334A/en
Publication of JP2009246334A5 publication Critical patent/JP2009246334A5/ja
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Claims (4)

エポキシ樹脂及び硬化剤を含む熱硬化性樹脂と、
粒子状のアルミナ及び該アルミナの表面の少なくとも一部を覆う無機酸化物層を備える被覆アルミナ粒子と、
を含有する光反射用熱硬化性樹脂組成物。 A thermosetting resin containing an epoxy resin and a curing agent;
Coated alumina particles comprising particulate alumina and an inorganic oxide layer covering at least part of the surface of the alumina;
A thermosetting resin composition for light reflection, comprising: 前記被覆アルミナ粒子は、金属アルコキサイド誘導体を含む表面処理剤でアルミナを被覆処理して無機酸化物層が形成されたものである、請求項１記載の光反射用熱硬化性樹脂組成物。 The coated alumina particles, the alumina with a surface treating agent containing a metal alkoxide derivative coating treatment to those of the inorganic oxide layer is formed, according to claim 1 light reflecting thermosetting resin composition. 前記金属アルコキサイド誘導体が、シランアルコキサイド、アルミニウムアルコキサイド及びチタンアルコキサイドからなる群より選ばれる少なくとも１種の金属アルコキサイドである、請求項２記載の光反射用熱硬化性樹脂組成物。 The thermosetting resin composition for light reflection according to claim 2 , wherein the metal alkoxide derivative is at least one metal alkoxide selected from the group consisting of silane alkoxide, aluminum alkoxide and titanium alkoxide. 前記被覆アルミナ粒子の中心粒径が０．１〜５０μｍである、請求項１〜３のいずれか一項に記載の光反射用熱硬化性樹脂組成物。 The thermosetting resin composition for light reflection according to any one of claims 1 to 3 , wherein the coated alumina particles have a center particle diameter of 0.1 to 50 µm.
JP2008304642A 2008-03-12 2008-11-28 Thermosetting resin composition for light reflection, substrate for loading photosemiconductor device and manufacturing method therefor, and photosemiconductor device Pending JP2009246334A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008304642A JP2009246334A (en) 2008-03-12 2008-11-28 Thermosetting resin composition for light reflection, substrate for loading photosemiconductor device and manufacturing method therefor, and photosemiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008062574 2008-03-12
JP2008304642A JP2009246334A (en) 2008-03-12 2008-11-28 Thermosetting resin composition for light reflection, substrate for loading photosemiconductor device and manufacturing method therefor, and photosemiconductor device

Publications (2)

Publication Number Publication Date
JP2009246334A JP2009246334A (en) 2009-10-22
JP2009246334A5 true JP2009246334A5 (en) 2011-12-01

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Family Applications (1)

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JP2008304642A Pending JP2009246334A (en) 2008-03-12 2008-11-28 Thermosetting resin composition for light reflection, substrate for loading photosemiconductor device and manufacturing method therefor, and photosemiconductor device

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JP (1) JP2009246334A (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011159767A (en) 2010-01-29 2011-08-18 Toshiba Corp Led package and method for manufacturing the same
JP5879739B2 (en) * 2010-04-28 2016-03-08 三菱化学株式会社 Package for semiconductor light emitting device and light emitting device
JP2012049519A (en) * 2010-07-26 2012-03-08 Mitsubishi Chemicals Corp Package for semiconductor light-emitting device, and light-emitting device
JP5682257B2 (en) * 2010-07-30 2015-03-11 三菱化学株式会社 Resin composition for semiconductor light emitting device
JP5792375B2 (en) * 2011-05-19 2015-10-14 晶能光電（江西）有限公司Ｌａｔｔｉｃｅ Ｐｏｗｅｒ（Ｊｉａｎｇｘｉ）Ｃｏｒｐｏｒａｔｉｏｎ Production method and manufacturing method of gallium nitride base film chip
JP7256382B2 (en) * 2019-04-26 2023-04-12 日亜化学工業株式会社 Method for manufacturing light emitting device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2947072B2 (en) * 1994-05-25 1999-09-13 信越化学工業株式会社 Method for producing surface-treated alumina
JP5060707B2 (en) * 2004-11-10 2012-10-31 日立化成工業株式会社 Thermosetting resin composition for light reflection
JP2007297601A (en) * 2006-04-06 2007-11-15 Hitachi Chem Co Ltd Thermosetting resin composition for light reflection, substrate for loading photosemiconductor device using the same, method for producing the same, and photosemiconductor device

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